JP2005015913A - Etching treatment method and etching treatment device for substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device where treatment tanks are not required to be so enlarged for corresponding to the enlargement of a substrate, and the defect in etching does not occur as in the case where dipping treatment is performed. <P>SOLUTION: The device is provided with: a first treatment tank 14; conveyance rollers 20 arranged at the inside of the first treatment tank 14 and supportingly conveying a substrate W; spray nozzles 22 arranged at the upper part of a substrate conveyance path and jetting an etching liquid toward the surface of the substrate W; a second treatment tank 28 connected to the first treatment tank 14; conveyance rollers 30 arranged at the inside of the second treatment tank 28 and supportingly conveying the substrate W; and a discharge nozzle 32 feeding the etching liquid to the surface of the substrate W carried out from the inside of the first treatment tank 14 and carried into the second treatment tank 28 and applying the etching liquid to the whole of the surface of the substrate W. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention supplies an etching solution to the surface of a substrate such as a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a printed substrate, or a semiconductor wafer, and etches a metal film formed on the surface of the substrate into a predetermined pattern. The present invention relates to a substrate etching method and an etching apparatus.

  As a method of etching the substrates one by one by supplying an etching solution to the surface of the substrate, the substrate is held on a spin chuck, and the substrate is rotated from the spray nozzle to the surface of the substrate while rotating about the vertical axis in a horizontal plane. A method of etching the substrate by discharging an etching solution, supporting the substrate by a plurality of transport rollers and transporting it in the horizontal direction, while moving from a plurality of spray nozzles arranged above the substrate transport path toward the surface of the substrate. The etching solution is ejected to etch the substrate, the etching solution is stored in the treatment tank, and the substrate is immersed horizontally in the etching solution by a plurality of rollers arranged in the treatment tank. There is a method of etching the substrate by reciprocating in the direction.

By the way, when a metal wiring pattern is formed on a substrate, etching is required so that the cross section of the metal wiring has a trapezoidal shape for the purpose of improving the insulation characteristics when an insulating film is formed on the metal wiring. It is done. For this reason, conventionally, the substrate is etched by a method of immersing the substrate in an etching solution. That is, using a processing apparatus provided with a plurality of transport rollers inside a processing tank and having a receiving tank for appropriately collecting the etching liquid in the processing tank, the etching liquid is transferred from the receiving tank to the processing tank by a pump. While the substrate is circulated, the substrate is reciprocated in the horizontal direction by the transfer roller in a state where the substrate is immersed in the etching solution stored in the processing tank, and the substrate is immersed (for example, Patent Documents). 1).
Japanese Patent Publication No. 7-19767 (4th page, Fig. 1)

  However, in recent years, the size of the substrate tends to increase. For example, in the case of a glass substrate for a liquid crystal display device, a large substrate having a side length of 2 m has been used. In an apparatus for immersing a substrate, it is necessary to increase the size of the processing tank in order to cope with such an increase in the size of the substrate. The pump for circulating and supplying the etching solution from the receiving tank to the processing tank is also required to have a large capacity. Furthermore, it is necessary to increase the strength of the treatment tank, and there is a problem that the amount of the etching solution that is a dangerous substance in the office is increased and stored, so that the management thereof becomes troublesome.

  In addition, in the conventional method for immersing the substrate, fine bubbles of hydrogen generated in the liquid adhere to the surface of the substrate without floating in the liquid surface direction when part of the metal film is dissolved by the etching solution. Something remains. When bubbles remain on the surface of the substrate in this way, contact between the metal film and the etching solution is blocked by the bubbles, so that the metal does not dissolve. As a result, there is a problem that the metal film 4 remains in a granular or film shape between the metal wiring patterns 2 on the substrate surface 1 as shown in a partially enlarged sectional view in FIG. Reference numeral 3 in FIG. 11 denotes a resist film.

  In a manufacturing process of a liquid crystal display device, a plasma display, etc., as shown in FIG. 12A, a laminated film of two or more kinds of metals or alloys, for example, aluminum (or aluminum alloy) is formed on the surface of the glass substrate 6. Etching is performed in a predetermined pattern on a metal film composed of one metal layer 7 and a second metal layer 8 such as molybdenum or chromium. In this case, in the conventional method of immersing the substrate, as shown in FIG. 12B, in the second metal layer 8c of the metal film after the etching, a bowl-shaped unnecessary portion is formed on the first metal layer 7c. Happens to remain. This is because the metal coating is formed of a laminated film of two kinds of metals, and in the process of immersing the substrate, one of the metals, Mo and Cr, is passivated, and the second metal layer It is conceivable that the etching reaction 8 stops midway. As shown in FIG. 12-2, when a saddle-like unnecessary portion is formed on the second metal layer 8c on the first metal layer 7c, an attempt is made to subsequently form an insulating film on the metal film. There is a problem in that a gap is generated between the insulating film and the metal coating, resulting in a defective product. Reference numeral 9 in FIGS. 12-1 and 12-2 denotes a resist film.

  The present invention has been made in view of the circumstances as described above, and it is not necessary to increase the size of the processing tank so as to cope with the increase in the size of the substrate, resulting in an etching failure as in the case of immersion treatment. Another object of the present invention is to provide a method for etching a substrate, and to provide an etching apparatus capable of suitably performing the method.

  According to a first aspect of the present invention, there is provided a substrate etching method in which an etching solution is supplied to a surface of a substrate and a metal film formed on the surface of the substrate is etched into a predetermined pattern. A first step of ejecting and etching the metal film mainly in the film thickness direction, and after the etching in the first step, an etching solution is supplied to the surface of the substrate to fill the entire surface of the substrate with the etching solution. And a second step of etching mainly in a direction along the film surface.

  According to a second aspect of the present invention, in the etching method according to the first aspect, in the second step, the substrate on which the etchant is deposited on the entire surface is formed by a plurality of transport rollers arranged in parallel to each other. The carrier roller is supported and moved, and the transport roller is heated to a temperature equivalent to the etching solution accumulated on the substrate.

  According to a third aspect of the present invention, there is provided a substrate etching method for supplying an etching solution to a surface of a substrate and etching a metal film formed on the surface of the substrate into a predetermined pattern. The first step of jetting and etching the metal film mainly in the film thickness direction, and after the etching in the first step, on the upper side edge in the tilt direction of the surface of the substrate supported in the tilted posture A second step of supplying an etching solution, causing the etching solution to flow down from the upper side edge to the lower side edge on the surface of the substrate, and etching the metal film mainly in a direction along the film surface; It is characterized by having.

  According to a fourth aspect of the present invention, in the etching method according to any one of the first to third aspects, the substrate is a glass substrate, and the metal film formed on the surface of the glass substrate has two or more types. It is a laminated film of metal or alloy, and the etching solution used in the first step and the etching solution used in the second step are chemical solutions having the same composition.

  According to a fifth aspect of the present invention, there is provided a substrate etching apparatus for supplying an etching solution to a surface of a substrate and etching a metal film formed on the surface of the substrate into a predetermined pattern. A substrate transfer unit disposed in one processing tank and supporting and transferring a substrate, and a substrate transfer path disposed above the substrate transfer path of the substrate transfer unit toward the surface of the substrate transferred by the substrate transfer unit A spray nozzle for ejecting an etchant; a second treatment tank connected to the first treatment tank; a substrate support means disposed in the second treatment tank and supporting a substrate; A discharge nozzle that feeds the etching solution over the entire surface of the substrate by supplying the etching solution to the surface of the substrate unloaded from the processing chamber of 1 and carried into the second processing bath and supported by the substrate support means; Having And butterflies.

  According to a sixth aspect of the present invention, in the etching processing apparatus according to the fifth aspect, the substrate transport means is composed of a plurality of transport rollers arranged in parallel to each other, and the transport rollers are stacked on the substrate. And a roller heating means for heating to the same temperature as the etching solution.

  According to a seventh aspect of the present invention, there is provided a substrate etching apparatus for supplying an etching solution to a surface of a substrate and etching a metal film formed on the surface of the substrate into a predetermined pattern. A substrate transfer unit disposed in one processing tank and supporting and transferring a substrate, and a substrate transfer path disposed above the substrate transfer path of the substrate transfer unit toward the surface of the substrate transferred by the substrate transfer unit A spray nozzle for jetting an etching solution, a second processing tank connected to the first processing tank, and a substrate tilt support means disposed in the second processing tank and supporting the substrate by tilting it. And an upper side edge portion in the tilt direction of the surface of the substrate unloaded from the first process tank and loaded into the second process tank and supported in an inclined posture by the substrate tilt support means. Supply etchant to Te, to the discharge nozzle to flow down to the lower-side edge portion of the etching solution from the upper-side edge portion on the surface of the substrate, comprising the.

  The invention according to claim 8 is the etching apparatus according to any one of claims 5 to 7, wherein the substrate is a glass substrate, and two or more types of metal coatings are formed on the surface of the glass substrate. It is a laminated film of metal or alloy, and the etching solution ejected from the spray nozzle toward the surface of the substrate and the etching solution supplied from the discharge nozzle to the surface of the substrate are chemical solutions having the same composition To do.

  According to the substrate etching method of the invention of claim 1, in the first step, the metal film is etched mainly in the film thickness direction by the etching solution ejected toward the surface of the substrate. That is, as shown in the partial enlarged cross-sectional view of FIG. 9A, since the etching solution 5 is ejected toward the substrate surface 1, the etching rate of the metal coating 2a formed on the substrate surface 1 is as follows. It becomes larger in the film thickness direction than in the direction along the surface. For this reason, the metal film 2a is etched mainly in the film thickness direction, and is corroded to the bottom surface to expose the substrate surface 1. Thereafter, in the second step, the metal film is etched mainly in the direction along the film surface in the same manner as when the immersion treatment is performed with the etching solution accumulated on the entire surface of the substrate. As a result, as shown in the partial enlarged cross-sectional view of FIG. 9B, the metal coating 2b is etched to have a trapezoidal cross section. In this processing method, even if the substrate is increased in size, there is no need for a large processing tank as in the immersion process. Further, in this processing method, after the metal film is etched to the bottom surface in the first step and the substrate surface is exposed, or after the etching is advanced to near the bottom surface, the metal film is formed on the film surface in the second step. Therefore, there is no problem even if hydrogen bubbles are generated during the second step, and there is a concern that the metal film may remain in the form of particles or films between the metal wiring patterns on the substrate surface. No.

  Further, as in the etching processing method of the invention according to claim 4, when the substrate is a glass substrate, and the metal film formed on the surface of the glass substrate is a laminated film of two or more kinds of metals or alloys, That is, as shown in a partially enlarged cross-sectional view in FIG. 10A, a laminated film of two or more kinds of metals or alloys, for example, a first metal layer 7 of aluminum (or aluminum alloy) is formed on the surface of the glass substrate 6. In the case of etching a metal film composed of the second metal layer 8 such as molybdenum or chromium, according to the etching method of the invention according to claim 1, as described above, the first metal layer is formed by the first step. 7 and the second metal layer 8 are etched mainly in the film thickness direction so that the surface of the glass substrate 6 is exposed as shown in FIG. After the etching is advanced to a state close to, the first metal layer 7a and the second metal layer 8a are etched in the direction along the film surface by the second step, so that when the substrate is immersed, A saddle-like unnecessary portion is not formed in the second metal layer on the first metal layer (see FIG. 12-2), and a partially enlarged cross-sectional view is shown in FIG. In addition, the second metal layer 8b is also etched well together with the first metal layer 7b, so that the cross section of the metal film composed of the first metal layer 7b and the second metal layer 8b (the portion of the metal wiring etc.) The cross-section is trapezoidal as desired. This is because the etching method in the first step is to eject an etching solution toward the surface of the substrate, so that the metal forming the second metal layer 8a (Mo or Mo alloy such as MoNb, MoNd, etc.) ) Is suppressed, and the first metal layer 7a and the second metal layer 8a are etched until the surface of the glass substrate 6 is exposed or close to the state by the first step. For this reason, in the second step, the first metal layer 7a and the second metal layer 8a are etched in a direction along the film surface in a relatively short time before the metal passivation occurs. This is considered to be due to the fact that the etching ends. Reference numeral 9 in FIGS. 10A to 10C denotes a resist film.

  In the etching processing method according to the second aspect of the present invention, in the second step, the transport roller is heated to a temperature equivalent to that of the etchant deposited on the substrate. Even if it does, the temperature of a board | substrate and etching liquid does not fall. Therefore, the temperature of the substrate is uniform over the entire surface, and temperature unevenness does not occur. Therefore, there is no difference in etching rate over the entire surface of the substrate, and the entire surface of the substrate is uniformly etched.

  According to the substrate etching method of the invention of claim 3, in the first step, the metal film is etched mainly in the film thickness direction by the etching solution ejected toward the surface of the substrate. That is, as shown in FIG. 9A, since the etching solution 5 is ejected toward the substrate surface 1, the etching rate of the metal film 2a formed on the substrate surface 1 is the direction along the film surface. It becomes larger in the film thickness direction compared to. Therefore, the metal film 2a is etched mainly in the film thickness direction and corroded to the bottom surface to expose the substrate surface 1, or corroded to the vicinity of the bottom surface to leave a very thin film. Thereafter, in the second step, the metal film is mainly applied to the film surface in the same manner as when the immersion treatment is performed with the etching solution flowing down from the upper side edge to the lower side edge on the surface of the inclined substrate. Etched in the direction along. As a result, as shown in FIG. 9B, the metal film 2b is etched to have a trapezoidal cross section. In this processing method, even if the substrate is increased in size, there is no need for a large processing tank as in the immersion process. Further, in this processing method, the metal film is etched to the bottom surface by the first step to expose the substrate surface, and then the metal film is etched in the direction along the film surface by the second step. Even if hydrogen bubbles are generated during the process, there is no particular problem, and there is no concern that the metal film remains in the form of particles or films between the metal wiring patterns on the substrate surface.

  Further, as in the etching processing method of the invention according to claim 4, when the substrate is a glass substrate, and the metal film formed on the surface of the glass substrate is a laminated film of two or more kinds of metals or alloys, That is, as shown in a partially enlarged cross-sectional view in FIG. 10A, a laminated film of two or more kinds of metals or alloys, for example, a first metal layer 7 of aluminum (or aluminum alloy) is formed on the surface of the glass substrate 6. When etching a metal film composed of the second metal layer 8 such as molybdenum or molybdenum alloy such as molybdenum niobium or molybdenum neodymium, according to the etching method of the invention according to claim 3, the method according to claim 1 described above is applied. Similar to the etching method of the invention, the second metal layer on the first metal layer has a bowl-shaped unnecessary portion as when the substrate is immersed. It is not formed (see FIG. 12-2), and the second metal layer 8b is etched well together with the first metal layer 7b as shown in the partial enlarged sectional view in FIG. Then, the cross section of the metal film composed of the first metal layer 7b and the second metal layer 8b (the cross section of the portion that becomes the metal wiring or the like) has a trapezoidal shape as desired.

  In the substrate etching apparatus of the invention according to claim 5, the metal film is mainly formed by the etching liquid ejected from the spray nozzle toward the surface of the substrate conveyed by the substrate conveying means in the first treatment tank. Etched in the thickness direction. Thereafter, in the second treatment tank, the etchant is supplied from the discharge nozzle to the surface of the substrate supported by the substrate support means, and the etchant is deposited on the entire surface of the substrate, and is deposited on the entire surface of the substrate. The metal film is etched by the etching solution mainly in the direction along the film surface as in the case of the immersion treatment.

  In the etching processing apparatus according to the sixth aspect of the present invention, the transport roller is heated to the same temperature as the etching liquid deposited on the substrate by the roller heating means in the second processing tank. Even if the processed substrate comes into contact with the transport roller, the temperature of the substrate and the etching solution does not decrease. Therefore, the temperature of the substrate is uniform over the entire surface, and temperature unevenness does not occur. Therefore, there is no difference in etching rate over the entire surface of the substrate, and the entire surface of the substrate is uniformly etched.

  In the substrate etching apparatus of the invention according to claim 7, the metal film is mainly formed by the etching liquid ejected from the spray nozzle toward the surface of the substrate conveyed by the substrate conveying means in the first treatment tank. Etched in the thickness direction. Thereafter, in the second treatment tank, an etching solution is supplied from the discharge nozzle to the upper side edge in the tilt direction of the surface of the substrate supported in the tilted posture by the substrate tilt support means, An etching solution is flowed on the surface from the upper side edge to the lower side edge, and the metal coating mainly follows the film surface in the same manner as when the immersion treatment is performed by the etching solution flowing down on the surface of the substrate. Etched in the opposite direction.

  In the etching processing apparatus according to the eighth aspect of the present invention, each layer of two or more kinds of metals or alloys constituting the laminated film formed on the glass substrate is etched satisfactorily, and the cross section of the laminated film (with metal wiring and the like) The cross-section of the part becomes a trapezoid as desired.

  According to the substrate etching method of each of the inventions according to claim 1 and claim 3, it is not necessary to increase the size of the processing tank so much even if the substrate is increased in size, so that an increase in the amount of etching solution used can be suppressed. In addition, it is not necessary to use a large-capacity pump or increase the strength of the processing tank, and the management of the etching solution which is a dangerous substance is not so troublesome. Further, a granular or film-like metal film remains between the metal wiring patterns on the surface of the substrate as in the case of the immersion treatment, or the substrate is a glass substrate as in the etching method of the invention according to claim 4. Etching such that when the metal film formed on the surface of the glass substrate is a laminated film of two or more kinds of metals or alloys, a bowl-shaped unnecessary portion is formed in the upper metal layer. There is no defect.

  In the etching method of the invention according to claim 2, in the second step, the temperature of the substrate can be kept uniform over the entire surface, so that the entire surface of the substrate can be uniformly etched.

  When the substrate etching apparatus of each invention according to claims 5 and 7 is used, the method according to each of the inventions according to claim 1 and claim 3 can be suitably implemented, and the above-described effects can be obtained.

  In the etching processing apparatus according to the sixth aspect of the present invention, the temperature of the substrate can be kept uniform over the entire surface in the second processing tank, so that the entire surface of the substrate can be uniformly etched.

  In the etching processing apparatus of the invention according to claim 8, the cross section of the laminated film of two or more kinds of metals or alloys formed on the glass substrate (the cross section of the portion to be a metal wiring or the like) is formed in a trapezoid shape as desired. Can do.

  Hereinafter, the best embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a schematic side view showing an embodiment of a substrate etching apparatus according to an embodiment of the first invention. This etching processing apparatus is configured by connecting a spray type etching processing unit 10 and a paddle type etching processing unit 12 in series.

  The spray-type etching processing unit 10 includes a sealed first processing tank 14 having a carry-in side opening 16 and a carry-out side opening 18. Inside the first processing tank 14, a plurality of forward / reversely rotatable transport rollers 20 that support the substrate W and transport it in the horizontal direction are arranged in parallel with each other along the substrate transport path. By these transport rollers 20, the substrate W is reciprocated in the processing tank 14. A plurality of spray nozzles 22 are arranged along the substrate transport path above the substrate transport path. An etching solution supply pipe 24 is connected to these spray nozzles 22, and the etching solution supply pipe 24 is connected to a flow path to an etching solution supply device (not shown). Then, an etching liquid, for example, a mixed liquid of phosphoric acid, nitric acid, and acetic acid is ejected from the spray nozzle 22 toward the surface of the substrate W transported by the transport roller 20. Further, a drain pipe 26 is connected to the bottom of the processing tank 10, and the used etching solution is collected at the bottom of the processing tank 14 and discharged from the processing tank 14 through the drain pipe 26. It has come to be.

  The paddle type etching processing unit 12 includes a second processing tank 28 disposed adjacent to the first processing tank 14. Inside the second processing tank 28, a plurality of forward / reversely rotatable transport rollers 30 that support the substrate W and transport it in the horizontal direction are arranged along the substrate transport path in parallel with each other. These transport rollers 30 allow the substrate W to reciprocate within the processing tank 28. In addition, a discharge nozzle 32 having a slit-shaped discharge port formed at the lower end surface is disposed in the vicinity of the carry-in port facing the carry-out opening 18 of the first processing tank 14 at a position directly above the substrate transfer path. Yes. An etching liquid supply pipe 34 is connected to the discharge nozzle 32, and the etching liquid supply pipe 34 is connected to an etching liquid supply device (not shown) through a flow path. Then, from the slit-shaped discharge port of the discharge nozzle 32, an etching solution, for example, a spray, is transferred to the surface of the substrate W that is carried into the second processing tank 28 and supported by the transfer roller 30 and passes directly below the discharge nozzle 32. A mixed liquid of phosphoric acid, nitric acid and acetic acid having the same composition as the etching liquid used in the etching apparatus 10 is discharged in a curtain shape, and the etching liquid 38 is deposited on the entire surface of the substrate W. In addition, a drain pipe 36 is connected to the bottom of the processing tank 28, and the etching solution flowing from the substrate W to the inner bottom of the processing tank 28 is discharged from the processing tank 28 through the drain pipe 36. It has come to be.

  In the etching processing apparatus having the configuration shown in FIG. 1, first, in the first processing tank 14 of the spray type etching processing unit 10, while the substrate W is reciprocated in the horizontal direction by the transport roller 20, the spray nozzle 22. The metal film formed on the surface of the substrate W is etched mainly in the film thickness direction with the etching liquid by jetting the etching liquid from the surface toward the surface of the substrate W. Then, when the portion of the metal film that is not covered with the resist film is etched deeply to the bottom surface of the metal film, the substrate surface is completely exposed (see FIGS. 9A and 10B). The substrate W is unloaded from the inside of the first processing tank 14 through the unloading side opening 18 and is transferred to the paddle type etching processing unit 12.

  When the substrate W is carried into the second processing tank 28 of the paddle type etching processing unit 12, the etching solution is supplied from the discharge nozzle 32 to the surface of the substrate W, and the etching solution 38 is applied to the entire surface of the substrate W. It is served. Then, the substrate W is immersed in the second processing tank 28 while being reciprocated in the horizontal direction by the transport roller 30 in the liquid processing state by the etching liquid accumulated on the entire surface of the substrate W. The metal film is etched mainly in the direction along the film surface as in the case of performing the treatment. As a result, the portion of the metal coating covered with the resist film is etched to have a trapezoidal cross section (see FIGS. 9B and 10C). When the etching process in the paddle type etching processing unit 12 is completed, the substrate W is unloaded from the second processing tank 28 and transferred to the next water washing processing unit (not shown).

  FIG. 2 is a schematic side view showing a schematic configuration of the paddle type etching processing unit, and is a diagram showing a configuration example different from that of the above-described embodiment. The paddle type etching processing unit 100 includes a plurality of transport rollers 102 arranged in parallel with each other along the substrate transport path, and the plurality of transport rollers 102 support the substrate W in a straight line. It can be reciprocated (oscillated in a horizontal plane). On one end side of the substrate transport path, a discharge nozzle 104 having a slit-shaped discharge port formed on the lower end surface is disposed at a position directly above the substrate transport path. A liquid recovery tank (second processing tank) 106 for recovering the etching liquid is disposed below the substrate transfer path.

  An etching solution supply pipe 108 is connected to the discharge nozzle 104 in communication, and the etching solution supply pipe 108 is connected to a liquid storage tank 112 in which the etching solution 110 is stored. A liquid supply pump 114 is interposed in the etching solution supply pipe 108, and a filter 116 and an opening / closing control valve 118 are respectively inserted. Then, by opening the open / close control valve 118, the etching liquid 110 is supplied from the liquid storage tank 112 to the discharge nozzle 104 through the etching liquid supply pipe 108 by the liquid supply pump 114, and from the slit-shaped discharge port of the discharge nozzle 104. The etching solution is discharged in a curtain shape, and the etching solution is deposited on the entire surface of the substrate W that passes directly under the discharge nozzle 104. Further, a recovery pipe 120 is connected to the bottom of the liquid recovery tank 106, and a front end outlet of the recovery pipe 120 is disposed in the liquid storage tank 112.

  The liquid storage tank 112 is provided with a liquid circulation pipe 122 whose one end is connected to the bottom of the liquid storage tank 112 and whose other end is disposed in the liquid storage tank 112. A liquid circulation pump 124 is inserted in the liquid circulation pipe 122 and a heater 126 is inserted. Then, the etching liquid 110 stored in the liquid storage tank 112 is circulated through the liquid circulation pipe 122, so that the etching liquid is heated when it flows through the heater 126, and is supplied by a controller (not shown). By controlling the heater 126, the temperature of the etching solution 110 in the liquid storage tank 112 is adjusted to a constant temperature, for example, 40 ° C. In addition, the means for adjusting and holding the etching solution 110 in the liquid storage tank 112 at a constant temperature is not limited to the configuration shown in the drawing.

  Each transport roller 102 can rotate in the forward and reverse directions, and is always driven to rotate during substrate processing except for a short time during substrate loading and substrate reversal. A liquid reservoir container 128 is disposed immediately below each conveyance roller 102. A branch pipe 130 branched from the etching solution supply pipe 108 between the filter 116 and the opening / closing control valve 118 is connected to each liquid reservoir 128. During the processing of the substrate, the etching solution adjusted to a constant temperature from the liquid storage tank 112 is continuously supplied into each liquid storage container 128 through the etching liquid supply pipe 108 and the branch pipe 130, respectively. The etching liquid overflows from the liquid reservoir 128. The etching liquid overflowing from the liquid reservoir 128 flows down into the liquid recovery tank 106 and returns from the liquid recovery tank 106 through the recovery pipe 120 to the liquid storage tank 112.

  As shown in the perspective view of FIG. 3, the liquid storage container 128 has a shape and a size such that a part of the peripheral surface of the transport roller 102 is immersed over the entire length in the etching liquid stored therein. is doing. In the illustrated apparatus, a liquid storage container 128 is provided for each of the transport rollers 102. However, a large liquid storage container is provided for each of the plurality of transport rollers 102 and stored in one liquid storage container. A plurality of transport rollers 102 may be immersed in the etching solution, or a large liquid storage container is provided, and all the transport rollers 102 are contained in the etching liquid stored in one liquid storage container. May be immersed.

  When the paddle type etching processing unit 100 is configured as shown in FIG. 2, a part of the peripheral surface of each transport roller 102 is immersed in an etching solution at a constant temperature stored in each liquid reservoir 128. At the same time, the transport rollers 102 are always rotated in this state, so that the entire peripheral surface of the transport rollers 102 is heated to a temperature equivalent to the etching solution accumulated on the substrate W. For this reason, even if the accumulated substrate W comes into contact with the transport roller 102, the temperature of the etching solution deposited on the substrate W and the entire surface thereof does not decrease. Therefore, the temperature of the substrate W is uniform over the entire surface and no temperature unevenness occurs, so that the etching rate is uniform over the entire surface of the substrate W and there is no possibility of causing processing unevenness.

  Next, FIG. 4 is a perspective view showing another configuration example for heating the transport roller 102. In this example, a liquid discharge nozzle 132 having a discharge port disposed in the vicinity of the transport roller 102 is provided. Then, the branch pipe 130 branched from the etching solution supply pipe 108 is connected to the liquid discharge nozzle 132 without installing the liquid reservoir 128.

  In the apparatus having such a configuration, the etching liquid adjusted to a constant temperature is supplied to the liquid discharge nozzle 132, and the constant temperature is applied from the discharge port of the liquid discharge nozzle 132 to the peripheral surface of the transport roller 102 that is constantly rotating. By discharging the etchant, the entire peripheral surface of the transport roller 102 is heated to a temperature equivalent to the etchant accumulated on the substrate W. For this reason, even if the accumulated substrate W comes into contact with the transport roller 102, the temperature of the etching solution deposited on the substrate W and the entire surface thereof does not decrease, and the temperature of the substrate W becomes uniform over the entire surface. . Therefore, the etching rate is uniform over the entire surface of the substrate W, and processing unevenness is prevented. The etching liquid discharged from the liquid discharge nozzle 132 to the peripheral surface of the transport roller 102 and dripping from the peripheral surface of the transport roller 102 flows down into the liquid recovery tank 106, and the recovery pipe 120 from the liquid recovery tank 106. And then returned to the liquid storage tank 112.

  FIG. 5 is a perspective view showing still another example of the structure for heating the transport roller of the paddle type etching processing section, with the transport roller partially broken. The transport roller 134 has a liquid passage 136 formed therein. In addition, liquid passages (not shown) communicating with the liquid passage 136 are also formed in the shaft center portions of the left and right rotation support shafts 138a and 138b of the transport roller 134, respectively. One rotating support shaft 138a is connected to the rotary joint 140a, and the liquid passage of the rotating support shaft 138a is connected to a heating liquid, for example, hot water supply device (not shown) through the rotary joint 140a. The hot water supply pipe 142 is connected to the flow path. The other rotation support shaft 138b is connected to the rotary joint 140b. The liquid passage of the rotation support shaft 138b is connected to the drain pipe 144 through the rotary joint 140b. The drain pipe 144 is connected to the hot water supply device. The flow path is connected.

  In the substrate processing apparatus provided with the transport roller 134 having such a configuration, warm water adjusted to a constant temperature, for example, 40 ° C. from the warm water supply device passes through the warm water supply pipe 142 to the liquid passage 136 inside the transport roller 134. When the hot water is supplied and flows in the liquid passage 136, the entire transport roller 134 is heated to a temperature equivalent to the etching solution accumulated on the substrate W. Then, the hot water whose temperature is lowered by heat exchange while flowing in the liquid passage 136 is discharged from the liquid passage 136, returned to the hot water supply device through the drain pipe 144, heated and circulated for use. Thus, even if the transported substrate 134 is heated from the inside, even if the liquid-filled substrate W comes into contact with the transport roller 134, the temperature of the etching solution deposited on the substrate W and the entire surface thereof is lowered. The temperature of the substrate W becomes uniform over the entire surface. Therefore, the etching rate is uniform over the entire surface of the substrate W, and processing unevenness does not occur.

  The means for heating the transport roller is not limited to the one shown in FIGS. For example, the structure which heats a conveyance roller directly with a rubber heater etc. may be sufficient.

  Next, FIG. 6 is a schematic side view showing an example of a schematic configuration of an etching apparatus for a substrate according to one embodiment of the second invention. This etching processing apparatus is constituted by connecting a spray type etching processing unit 40 and a liquid flow type etching processing unit 42 in series.

  The spray type etching processing unit 40 includes a sealed first processing tank 44 having a carry-in side opening 46 and a carry-out side opening 48, similarly to the spray type etching processing unit 10 shown in FIG. 1. Inside the first treatment tank 44, a plurality of forward / reverse rotatable transport rollers 50a and 50b that support the substrate W and transport it in the horizontal direction are arranged in parallel with each other along the substrate transport path. . By these transport rollers 50 a and 50 b, the substrate W is supported in a horizontal posture and is reciprocated in the processing tank 44. The plurality of transport rollers 50b close to the carry-out side opening 48 are respectively pivotally attached to the pair of left and right roller mounting members 52. As shown in the front view of FIG. 7, the roller mounting member 52 passes through a point O on the extension line of the rotation shaft 54 of the transport roller 50b and is a straight line parallel to the substrate transport direction (point O in FIG. 7). It is provided so as to be pivotable by a predetermined angle (an angle formed by the alternate long and short dash lines A and A ′) by a driving device (not shown) around a straight line passing through and perpendicular to the paper surface. As described above, by providing a mechanism that can appropriately rotate the transport roller 50b, the substrate W is changed from the horizontal posture to the inclined posture in the first processing tank 44, and the substrate W is inclined in the first posture. It can be carried out from the inside of the processing tank 44.

  A plurality of spray nozzles 56 are arranged along the substrate transport path above the substrate transport path. An etching solution supply pipe 58 is connected to these spray nozzles 56, and the etching solution supply pipe 58 is connected to a flow path of an etching solution supply device (not shown). From the spray nozzle 56, an etching solution is jetted toward the surface of the substrate W which is transported while being supported in a horizontal posture by the transport rollers 50a and 50b. Further, a drain pipe 60 is connected to the bottom of the processing tank 44, and the used etching solution is collected at the bottom of the processing tank 44 and discharged from the processing tank 44 through the drain pipe 60. It has come to be.

  The liquid-flow etching processing unit 42 includes a second processing tank 62 disposed adjacent to the first processing tank 44. Inside the second processing tank 62, a plurality of forward / reversely rotatable transport rollers 64 that support the substrate W and transport it in the horizontal direction are arranged in parallel with each other along the substrate transport path. For example, as shown in the front view of FIG. 8, the conveyance roller 64 has a roller shaft 66, and the roller shaft 66 is inclined with respect to the horizontal plane, for example, an angle of 5 ° to 20 ° with respect to the horizontal plane. It is tilted and supported so as to be freely rotatable (a support mechanism is not shown). A central roller 68 is fixed to the central portion of the roller shaft 66, and side rollers 70 and 70 are fixed to both ends, respectively. Also, flanges 72 and 74 are fixed to the outer side of each side roller 70 on the roller shaft 66, respectively. The lower surface of the substrate W is supported by the rollers 68, 70, 70 and is kept in an inclined posture, and the lower side edge is brought into contact with the lower flange 72 so as not to slide down. To be. The plurality of transport rollers 64 having such a structure allows the substrate W to be supported in an inclined posture and reciprocated in the processing tank 62.

  Further, an etching solution supply unit 76 is disposed over the entire length of the processing tank 62 in the direction along the substrate transfer direction above the substrate transfer path. The etchant supply unit 76 is disposed at a position directly above the upper side edge in the tilt direction on the surface of the substrate W supported in a tilted posture by the transport roller 64. For example, as shown in FIG. 8, the etching solution supply unit 76 includes a pipe-shaped discharge nozzle 78 and a liquid receiving plate 80 disposed in parallel to the discharge nozzle 78 directly below the discharge nozzle 78. . In the discharge nozzle 78, a plurality of discharge ports are equally arranged in the length direction on the lower surface side. An etching liquid supply pipe 82 is connected to the discharge nozzle 78, and the etching liquid supply pipe 82 is connected to an etching liquid supply device (not shown) through a flow path. In the etching solution supply unit 76 having such a configuration, the etching solution discharged from the plurality of discharge ports of the discharge nozzle 78 onto the liquid receiving plate 80 flows on the liquid receiving plate 80 while the upper side of the substrate W After spreading evenly in the direction along the edge, it flows down from the liquid receiving plate 80 to the upper edge of the substrate W. Then, the etching solution supplied to the upper side edge of the substrate W flows down from the upper side edge to the lower side edge on the surface of the substrate W, and during this time, the surface of the substrate W is etched. .

  Further, a drain pipe 84 is connected to the bottom of the processing tank 62, and the etching solution that has flowed from the substrate W to the inner bottom of the processing tank 62 is discharged from the processing tank 62 through the drain pipe 84. It has come to be.

  In the etching processing apparatus having the configuration illustrated in FIG. 6, first, in the first processing tank 44 of the spray type etching processing unit 40, the surface is formed on the surface of the substrate W as in the apparatus illustrated in FIG. 1. The metal film is etched mainly in the film thickness direction with an etching solution. When the etching process in the first processing tank 44 is completed, the substrate W is changed from a horizontal attitude to an inclined attitude by the transport roller 50b, and then passes through the unloading side opening 48 from the first processing tank 44. And is conveyed to the liquid flow etching processing unit 42.

  When the substrate W is carried into the second processing tank 62 of the liquid flow etching processing unit 42, the etching solution supply unit supports the substrate W in an inclined posture by the transport roller 64 and reciprocates in the horizontal direction. An etching solution is supplied from 76 to the upper side edge of the surface of the substrate W in the tilt direction. As a result, the etching solution is flowed from the upper side edge to the lower side edge on the surface of the substrate W, and the metal is the same as when the immersion treatment is performed with the etching solution flowing on the surface of the substrate W. The film is etched mainly in the direction along the film surface. When the etching process in the fluid etching processing unit 42 is completed, the substrate W is unloaded from the second processing tank 62 and transferred to the next water washing processing unit (not shown).

  In the embodiment shown in FIG. 6, in the first processing tank 44 of the spray type etching processing unit 40, the etching solution is applied to the surface of the substrate W while supporting the substrate W in a horizontal posture and reciprocating in the horizontal direction. The substrate W is changed from the horizontal posture to the inclined posture, the substrate is taken out of the first processing tank 44, and the substrate W is inclined to the liquid-flow etching processing unit 42. In the first processing tank 44 of the spray-type etching processing unit 40, the etching solution is transferred to the surface of the substrate W while supporting the substrate W in an inclined posture and reciprocating in the horizontal direction. A configuration may be adopted in which the etching process is performed by ejecting the substrate W, and the substrate W is taken out of the first processing tank 44 in an inclined posture and is transported to the liquid flow etching processing unit 42. In addition, the configuration of the transport roller 64 that transports the substrate W while supporting the substrate W in an inclined posture in the second processing tank 62 of the liquid-flow etching processing unit 42, and the upper side end of the surface of the substrate W supported in the inclined posture The configuration of the etching solution supply unit 76 that supplies the etching solution to the side portion is not limited to the illustrated example. For example, instead of the pipe-shaped discharge nozzle 78 and the liquid receiving plate 80, a nozzle having a slit-shaped discharge port that is long in the direction perpendicular to the paper surface of FIG. A configuration may be adopted in which the liquid is supplied to the upper side edge portion. In short, any liquid may be used as long as the liquid is supplied to the substrate in a laminar flow.

  In the embodiments shown in FIGS. 1 and 6, the etching process is performed while reciprocating (swinging) the substrate W in each of the processing tanks 14, 28, 44, 62. The present invention can also be applied to an apparatus configured to perform an etching process while continuously transporting the film in one direction.

1 is a schematic side view illustrating an example of a schematic configuration of a substrate etching apparatus according to an embodiment of the first invention. FIG. It is a typical side view which shows schematic structure of the paddle type etching process part in the etching processing apparatus which concerns on 1st invention, and shows the structural example different from what was shown in FIG. FIG. 3 is a perspective view of a liquid storage container that is a component of heating means of a transport roller in the paddle type etching processing unit shown in FIG. 2. It is a perspective view which shows another structural example of the heating means of the conveyance roller in a paddle type etching process part. It is a perspective view which shows another example of a structure of the heating means of the conveyance roller in a paddle type etching process part, and shows the conveyance roller in the partially broken state. FIG. 6 is a schematic side view showing an embodiment of a substrate etching apparatus according to an embodiment of the second invention. It is a front view which shows an example of a structure of the conveyance roller installed in the processing tank of the spray type etching process part which comprises the etching processing apparatus shown in FIG. It is a front view which shows an example of each structure of the conveyance roller installed in the processing tank of the liquid flow type etching process part which comprises the etching processing apparatus shown in FIG. 6, and an etching liquid supply part. It is a partial expanded sectional view for demonstrating the effect | action of this invention. It is a partial expanded sectional view for demonstrating the effect | action of this invention in the case of etching the metal film which consists of a laminated film of a 2 or more types of metal or alloy on the surface of a glass substrate. It is a partial expanded sectional view for demonstrating the problem in the conventional immersion type etching process. It is a partial expanded sectional view which shows the board | substrate with which the metal film which consists of a laminated film of two or more types of metals or alloys was formed in the surface. It is a partial expanded sectional view for demonstrating the conventional problem in the case of etching-processing the board | substrate shown to FIGS. 12-1 by an immersion method.

Explanation of symbols

W substrate 10, 40 Spray type etching processing unit 12, 100 Paddle type etching processing unit 14, 44 First processing tank 20, 30, 50a, 50b, 64, 102, 134 Transport roller 22, 56 Spray nozzles 24, 34, 58, 82, 108 Etching solution supply pipes 28, 62, 106 Second treatment tanks 32, 78, 104 Discharge nozzle 38 Etching solution 42 Liquid flow etching processing unit 52 Roller mounting member 76 Etching solution supply unit 128 Liquid reservoir 132 Liquid discharge nozzle 136 Liquid passage 142 Hot water supply pipe

Claims (8)

In the substrate etching method for supplying an etching solution to the surface of the substrate and etching the metal film formed on the surface of the substrate into a predetermined pattern,
A first step of jetting an etching solution toward the surface of the substrate and etching the metal coating mainly in the film thickness direction;
After the etching by the first step, a second step of supplying an etching solution to the surface of the substrate to fill the entire surface of the substrate and etching the metal film mainly in the direction along the film surface;
A method for etching a substrate, comprising: In the second step, the substrate on which the etchant is deposited on the entire surface is moved by supporting the substrate by a plurality of conveyance rollers arranged in parallel to each other, and the conveyance roller is moved on the substrate. The method for etching a substrate according to claim 1, wherein the substrate is heated to a temperature equivalent to that of the substrate. In the substrate etching method for supplying an etching solution to the surface of the substrate and etching the metal film formed on the surface of the substrate into a predetermined pattern,
A first step of jetting an etching solution toward the surface of the substrate and etching the metal film mainly in the film thickness direction;
After etching in the first step, an etching solution is supplied to the upper side edge of the surface of the substrate supported in the inclined posture in the inclined direction, and the etching solution is placed on the upper surface edge of the substrate. A second step of flowing down from the portion to the lower side edge and etching the metal film mainly in a direction along the film surface;
A method for etching a substrate, comprising: The substrate is a glass substrate, and the metal film formed on the surface of the glass substrate is a laminated film of two or more kinds of metals or alloys, and the etching solution used in the first step and the second step 4. The method for etching a substrate according to claim 1, wherein the etching solution used in step 1 is a chemical solution having the same composition. In an etching apparatus for a substrate that supplies an etching solution to the surface of the substrate and etches the metal film formed on the surface of the substrate into a predetermined pattern.
A first treatment tank;
A substrate transfer means disposed in the first processing tank and supporting and transferring the substrate;
A spray nozzle that is disposed above the substrate transport path of the substrate transport means and jets an etching solution toward the surface of the substrate transported by the substrate transport means;
A second treatment tank connected to the first treatment tank;
A substrate support means disposed in the second processing tank and supporting the substrate;
A discharge nozzle that supplies the etching liquid to the surface of the substrate that is unloaded from the first processing tank, is loaded into the second processing tank and is supported by the substrate support means, and accumulates the etching liquid on the entire surface of the substrate. When,
An apparatus for etching a substrate, comprising: The substrate transport means is composed of a plurality of transport rollers arranged in parallel with each other, and includes a roller heating means for heating the transport roller to a temperature equivalent to the etching solution accumulated on the substrate. Item 6. The substrate etching apparatus according to Item 5. In an etching apparatus for a substrate that supplies an etching solution to the surface of the substrate and etches the metal film formed on the surface of the substrate into a predetermined pattern.
A first treatment tank;
A substrate transfer means disposed in the first processing tank and supporting and transferring the substrate;
A spray nozzle that is disposed above the substrate transport path of the substrate transport means and jets an etching solution toward the surface of the substrate transported by the substrate transport means;
A second treatment tank connected to the first treatment tank;
Substrate tilt support means disposed in the second processing tank and supporting the substrate by tilting;
Etching the upper side edge in the tilt direction of the surface of the substrate unloaded from the first processing tank, loaded into the second processing tank and supported in an inclined posture by the substrate tilt support means A discharge nozzle that supplies a liquid and causes the etching liquid to flow down from the upper side edge to the lower side edge on the surface of the substrate;
An apparatus for etching a substrate, comprising: The substrate is a glass substrate, and the metal film formed on the surface of the glass substrate is a laminated film of two or more kinds of metals or alloys, and an etching solution ejected from the spray nozzle toward the surface of the substrate, 8. The substrate etching apparatus according to claim 5, wherein the etching solution supplied from the discharge nozzle to the surface of the substrate is a chemical solution having the same composition.

Images