TW201230225A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
TW201230225A
TW201230225A TW100122571A TW100122571A TW201230225A TW 201230225 A TW201230225 A TW 201230225A TW 100122571 A TW100122571 A TW 100122571A TW 100122571 A TW100122571 A TW 100122571A TW 201230225 A TW201230225 A TW 201230225A
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Taiwan
Prior art keywords
substrate
nozzle
main surface
spray
liquid
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TW100122571A
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Chinese (zh)
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TWI441275B (en
Inventor
Yukio Tomifuji
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Dainippon Screen Mfg
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Publication of TWI441275B publication Critical patent/TWI441275B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spray Control Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
  • Nozzles (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

A substrate processing apparatus is provided to uniformly wet-process a substrate by preventing the stay of discharged processing solutions on the surface of the substrate. A substrate processing apparatus includes a plurality of spray pipe units(22a-22f) and a plurality of spray nozzles(14a-14f). The spray nozzle is installed in a length direction of the spray pipe unit in a row. The spray nozzle discharges processing solutions from an outlet(26a-26f) to a surface of a substrate(W).

Description

201230225 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種對液晶顯示裝置(LCD，Liquid Crystal Display)用、電聚顯示器（PDP，Plasma Display Panel，電毁 顯示器面板）用、有機發光二極體（OLED，Organic201230225 VI. Description of the Invention: [Technical Field] The present invention relates to a liquid crystal display device (LCD), a liquid crystal display panel (PDP, a plasma display panel), and an organic light emitting device. Diode (OLED, Organic)

Light-Emitting Diode)用、場發射顯示器（FED，Fidd Emissi〇nLight-Emitting Diode), field emission display (FED, Fidd Emissi〇n

Display)用、真空螢光顯示器（VFD，Vacuum Flu〇rescem Display)用、太陽電池板用等之玻璃基板、磁/光碟用之玻璃 /陶莞基板、半導體晶圓、電子裝置基板#各種基板喷出純 水等清洗液、蝕刻液、顯影液、抗蝕剝離液等化學藥品等各 種處理液而對基板進行濕式處理之基板處理裝置。 【先前技】 先前該種基板處理裝置已知有如下裝置，其―面藉由^基 板之搬送方向並排設置之搬賴等以水平姿勢或相對於^ 平面而向與基板搬送方向正交之方向傾斜之姿勢於濕式處 理室内搬送基板，-面自噴㈣嘴呈淋浴狀地對基板之表面 喷出處理液，祕進行特定之基板纽者。於該種基板處理 裝置中，根誠理之種_自噴射嘴對基板表面噴出 等清洗液、#驗、顯科、抗_離 處理液。 +樂口口專各種 而且，於該種基板處理裳置中，為將處理液均勻地供4 整個基板表面與騎搬送方向蚊之方㈣間距二互 100122571 201230225 相平行地配置複數個喷霧喷嘴，自複數個喷嘴部將處理液噴 出至基板之表面，且該喷霧喷嘴包括：噴霧管部，其於沿某 板搬送方向之方向延伸；及複數個喷嘴部，其沿噴霧管部之 長度方向相互接近地排成一列而設置。圖5係表示自先前之 基板處理裝置中之喷嘴部100對基板w之表面1〇2噴出處 理液之情況之模式圖。 如圖5所示，於該種先前之基板處理裝置噴出處理液時， 沿與圖式之平面成直角方向搬送之基板W之表面1〇2上中 央部附近，與基板w之兩側端部附近相比處理液之液流變 慢而導致於中央部附近產生處理液之滯留，由此噴出之新舊 處理液之置換仙劣化，其絲_致處理均句化。 為解決上述問題而被使用-種裝置，其鋪由使喷霧喷嘴 之喷霧管部以其長度方向之中心軸為中心往復旋動而使處 理液之嘴出方向發生變化，從而促進基板表面上之新舊處理 液之置換(例如’參照專利文獻^。 [先前技術文獻] [專利文獻] 10-79368號公報 [專利文獻1]曰本專利特開平 【發明内容】 (發明所欲解決之問題) 圖6係麵自先前之錢f部往復㈣狀基 置中之喷嘴部100對基板W之矣二1Λ 衣 之表面102噴出處理液之情況 100122571 4 201230225 之模式圖。 於該基板處理裝置中，於與基板搬送方向交叉之方向等間 ，且互相平行地配置複數㈣㈣嘴，該讀噴嘴包括：嘴 ’ 務笞。P，其於沿基板搬送方向（與圖式之平面成直角之方Θ') 之方向延伸（未圖示）；及複數個喷嘴部100，其沿噴霧管邱 之長度方向互相接近地排成一列而設置，一面以各噴霧管部 之中心軸為中心藉由旋動機構（未圖示）使該複數個噴霧嘴 嘴沿圖6(a)中之箭頭符號A方向及圖6(b)中之箭頭符號B 方向往復旋動，-面使來自喷嘴部之處理液向基板之表 面102之嘴出方向發生變化。然而，只要反覆進行該種往復 旋動，則向基板W之表面102上喷出後暫時向基板％之— 側^方向机動之處理液會向反方向（另—側端方向）流動，從 而於基板中央部附近與兩側端部附近處理液之滯留量不 同，因此會產生處理之進行情況不均勻。 本發明係繁於如上述之情況而完成者，其目的在於提供一 種可防止嘴出至基板表面上之處理液產生滞留而可有效地 達成整個基板表面之處理均自化之基板處理裝置。 (解決問題之手段） ： _請專利第1項之發明之特徵為，以如下方式構成基 -板處縣置’該基板處縣置包括：濕式處理室，其對基板 進仃濕式處理；基板搬送手段，其配設於上述濕式處理室 内^火平姿勢或相對於水平面而向與基板搬送方向正交之 100122571 5 201230225 方向傾斜之姿勢沿水平方向搬送基板；及處理液供給手段， 其將處理液供給至藉由配設於上述濕式處理室内之基板搬 送手#又而搬送之基板之主表面。即，上述處理液供給手段包 括複數個喷霧噴嘴’該複數個喷霧喷嘴於與基板搬送方向交 又之方向或沿基板搬送方向之方向等間距且互相平行地配 置，且將處理液噴出至基板之主表面，各上述複數個喷霧喷 嘴包括：噴霧管部，其於沿上述基板搬送方向之方向或與上 述基板搬送方向交叉之方向延伸；及複數個噴嘴部，其沿該 喷霧苔卩之長度方向互相接近地排成一列而設置，將處理液 自/、喷出口嗔出至基板之主表面，以使上述複數個喷嘴部之 喷出口相對於基板之主表面之對向角度自以水平姿勢搬送 之基板之主表面之與上述基板搬送方向交叉之方向之中央 部附近向兩端部附近、或者自基板之主表面沿著上述基板搬 送方向之方向之中央部附近向兩端部附近而相對於鉛垂線 逐漸變大之方式’或者自以傾斜之姿勢搬送之基板之主表面 之傾斜上端部附近向傾斜下端部附近而相對於基板之主表 面之法線逐漸變大之方式，將上述複數㈣嘴部設置於上述 複數個噴霧官部，藉此積極地於基板之主表面上產生噴出後 之處理液之液體流動。 申叫專利範圍第2項之發明係如申請專利範圍第丨項之基 板處理裝置’其中於與基板搬送方向交叉之方向等間距地配 置之上述複數個噴霧喷嘴之上述複數個喷嘴部於該交叉方 100122571 201230225 向呈交錯狀配置。 申請專利範圍第3項之發明係 柘驻¥ # τ明寻利範圍第1項之基 板处裝置，其中於沿基板搬送方向之 上述複數個嘴霧噴嘴之上述複數個 方向之方向呈交錯狀配置。於沿祕板搬送 板圍第4項之發明係如申請專利範圍第1項之基 处裝置，其中自上述複數個嘴嘴部之喷出 理液之嘴出量相等。 彳噴出之處 申請專利範圍第5項之發明係如巾請專利範圍第i至4 項中任-項之基板處理裝置，其中自上賴數個喷嘴部之喷 出口所噴出之處理液為蝕刻液。 (發明效果） 於申請專利範圍第1項之發明之基板處理裝置中，以使複 數個噴嘴部之噴出口相對於基板之主表面之對向角度自以 水平姿勢搬送之基板的主表面與基板搬❹向交叉之方向 的中央部附近向兩端部附近、或者自基板之主表面之沿基板 搬送方向之方向的中央部附近向兩端部附近’相對於錯垂線 逐漸變大之方式，或者自以傾斜之姿勢搬送之基板的主表面 之傾斜上端部附近向傾斜下端部附近，相對於基板之主表面 之法線逐漸變大之方式’將複數個噴嘴部設置於複數個喷霧 管部。因此，其可積極地於基板之主表面上產生噴出後之處 理液之液體流動，而可防止處理液產生滯留且在遍及基板之 100122571 7 201230225 整個主表面達成均勻之濕式處理。 於申請專利範圍第2及3項之發明之基板處理裝置中，於 與基板搬送方向交叉之方向等_地配置之複數個嗔霧喷 嘴的複數個喷嘴部於該交又方向呈交錯狀配置，於沿基板搬 送方向之方向等間距地配置之複數個噴霧喷嘴的複數個喷 嘴部於沿該基板搬送方向之方向呈交錯狀配置。因此，其可 減少來自各喷嘴部之處理液噴出流之互相干擾，藉此，可更 有效地防止基板表面上之喷出處理液產生滯留而積極地促 進處理液產生液體流動。 於申請專利範圍第4項之發明之基板處理裝置中，無需用 以調節來自各噴嘴部之喷出量以使噴出後處理液不產生滯 留之煩瑣之機構等，藉此可謀求設計成本之低廉化。 於申請專利範圍第5項之發明之基板處理裝置中，因所喷 出之I虫刻液之滯留而引起產生滯留部位與非產生滯留部位 之I虫刻進度不同，從而引起蝕刻處理不均勻化，藉此，可有 效地阻止產生圖案短路(pattern short)(配線殘留）或圖案形狀 之不勻（mura)之問題。 【實施方式] 以下’一面參照圖式一面對本發明之實施形態進行說明。 圖1係模式性地表示本發明之第1實施形態之基板處理裝 置1者。 該基板處理装置1包含：化學藥品處理室10，其喷出蝕 100122571 8 ⑧ 201230225 =:3液、：_離液等化學藥品而對基板W進行化 Η)内一面以水平姿勢支撐^ ’其學藥品處理室 „動；化學藥品儲槽12, 面於水平方向Χ往復移 -14 ’其用以將化學藥品嘖出至=品丄複數個噴霧噴嘴 16;及化學藥品供給路18二:板W之表面繼 , 其將化學藥品儲槽12 Φ貯在夕 化學藥品輸送至喷霧噴嘴14。 、 噴霧喷嘴14係於與基板搬 互相平行地於化學藥品處理室、向等間距地且 嘻嘴14 Μ · i 1Q内配設有複數個，各噴霧 Θ之方^ 卩22(參㈣2)，其於沿基板搬送方 向之方向延伸;及複數個噴嘴部24，其於該喷霧管部22之 長度方向互相接近地排成1丨而設置，其將化學藥品自里噴 出口聯照圖·噴出至基板w之表面心又純學 藥品處理室H)之底部設置有用以將流下至化學藥品處理室 1〇内底部已使狀化學藥㈣出之循環排水路20,循環排 水路20與化學藥品儲槽12連通連接。 於包含上述結構之基板處理裝置i中，首先，一面藉由搬 送幸昆以水平姿勢支撐自化學藥品處理室1〇之基板^入口 ' (未圖示)搬入至化學藥品處理室10内之基板w，並且使該 •基板w於水平方向往復移動，—面藉由送妓16之驅動而 將化學藥品儲槽12中貯存之化學藥品經由化學藥品供給路 18輸送至喷霧喷嘴14，分別自喷霧噴嘴u之各喷嘴部24 100122571 9 201230225 將等量之化學藥品喷出至基板W之表面102，藉此進行化 學藥品處理。 化學藥品處理結束之基板W係藉由搬送輥自化學藥品處 理室10之基板搬出口（未圖示）搬出。自基板W表面102流 下進而流下至化學藥品處理室10内底部之化學藥品經由循 環排水路20而回收至化學藥品儲槽12中。 圖2係用以說明設置於構成喷霧喷嘴14之喷霧管部22 的喷嘴部24之噴出口 26相對於基板W表面102之對向角 度之模式圖，圖2(a)係其俯視圖，圖2(b)係其剖面圖。 如圖2(a)及圖2(b)所示，複數個，於本實施形態中為6個 之噴霧喷嘴14a〜14f於與基板搬送方向X交叉之方向等間 距地且互相平行地配設。噴霧喷嘴14a〜14f分別包括：噴 霧管部22a〜22f’其於沿基板搬送方向之方向延伸；及複數 個喷嘴部24 ’其於各喷霧管部22a〜22f之長度方向互相接 近地排成一列而設置。 並且，相對於基板W之表面1〇2使複數個喷嘴部24之噴 出口 26之對向角度’自以水平姿勢搬送之基板w表面1〇2 與基板搬送方向X交又之方向自中央部附近向兩端部附近 而相對於鉛垂線逐漸變大之方式，將喷嘴部24設置於各噴 霧管部22a〜22f’進而該等喷嘴部24，如圖2⑷所示，於 與基板搬送方向X交又之方向呈交錯狀配置。 圖2圖（b)係例示藉由喷嘴部24中設置於喷霧管部22a〜 100122571 201230225 22f之基板搬送方向x大致中央部之喷嘴部24a〜24f而形 成之喷嘴部群之一組’於與基板搬送方向χ交又方向之中 央部附近相對向之噴嘴部24c及24d之喷出口 26c及26d 中’將相對於錄垂線之角度設定為〇。，而於兩端部附近相 對向之喷嘴部24a、24f之喷出口 26a、26f中，將該角度設 定為30。〜60。。藉由其他喷嘴部群而形成之組之喷出口相 對於基板W的表面1〇2之對向角度亦同樣地以自與基板搬 运方向X交叉方向之中央部附近向兩端部附近相對於鉛垂 線逐漸變大之方式而設定。 於以上述方式構成之噴霧喷嘴14a〜14f中，自設置於靜 止狀態之(無往復旋動）噴霧管部22a〜22f之喷嘴部24之各 自之對向角度固疋之噴出口 26向基板w之表面搬喷出相 同喷出量之化學藥品，藉此，可於基板W之表面102上， 自與基板搬送方向χ交叉方向之基板之中央部向兩端部， 積和也產生以則碩符號γ所示之噴出後之化學藥品之液體 而可防止化學藥品產生滯留，且不必調節來自各喷嘴 部^之喷出量即可遍及基板w之整個表面102達成均勾之 =學樂品處理。如此，可防止使等量之化學藥品直接自各喷 窜部24喷出而於嘴出後產生化學藥品處理液之滯留，因 此’無需以防止產生該種滯留為目的Μ以調節來自各喷嘴 :24之化學藥品噴出量之煩瑣之機構等，藉此可謀求設計 成本之低廉化。又 ν ϊ 例如於使用敍刻液作為化學藥品進行鋁 100122571 11 201230225 蝕刻處理之情形時，因所噴出之蝕刻液之滯留而出現產生滯 留部位與非產生滯留部位之餘刻進度之不同，從而使得蚀刻 處理不均勻化，藉此，則可有效地阻止產生圖案短路（配線 殘留）或圖案形狀之不勻之問題。 又，由於嗔嘴部24係於與基板搬送方向X交又之方向呈 交錯狀配置，故而可減少來自各噴嘴部24之化學藥品噴出 流之互相干擾，藉此，可更有效地防止基板表面1〇2上之喷 出化學藥品產生滯留而積極地促進化學藥品產生液體流動。 其次’對本發明之第2實施形態之基板處理震置進行說 明。 圖3係用以說明本發明之第2實施形態之基板處理裝置中 相對於基板W之表面102設置於喷霧喷嘴14'之喷霧管部 22'之喷嘴部2氺的喷出口 26’之對向角度之模式圖，圖3(a) 係其俯視圖，圖3(b)係其剖面圖。 於第2實施形態中，噴霧噴嘴14’係於沿基板搬送方向之 方向等間距且互相平行地於化學藥品處理室10内配設有複 數個’各喷霧嘴嘴14包括.喷霧管部22' ’其於與基板搬送 方向交叉之方向延伸；及複數個噴嘴部24'，其於該嘴霧管 部22'之長度方向互相接近地排成一列而設置，其將化學藥 品自其喷出口 26’喷出至基板W之表面102。 如圖3(a)及圖3(b)所示’與第1貫施形態相同，6個喷霧 喷嘴14a'〜14f於沿基板搬送方向X之方向等間距且互相平 100J22571 201230225 行地配設。喷霧喷嘴14’a〜14f分別包括：噴霧管部22a·〜 22f ’其於與基板搬送方向交叉之方向延伸；及複數個噴嘴 部24'，其於各喷霧管部22a'〜22f之長度方向互相接近地排 成一列而設置。 而且’相對於基板W之表面102以使複數個喷嘴部24, 之喷出口 26’之對向角度自以水平姿勢搬送之基板W表面 102之沿基板搬送方向X方向之中央部附近向兩端部附近 而相對於鉛垂線逐漸變大之方式，將噴嘴部24,設置於各喷 霧噴嘴14a’〜14f，進而，該等喷嘴部24'，如圖3(a)所示於 沿基板搬送方向X之方向呈交錯狀配置。 圖3 (b)係例示藉由喷嘴部24’中設置於噴霧管部22a’〜22f 與基板搬送方向X交叉方向之大致中央部的喷嘴部24a·〜 24f而形成之噴嘴部群之1組，於沿基板搬送方向X方向之 中央部附近相對向的喷嘴部24c·及24d·之喷出口 26c’及26d' 中’將相對於鉛垂線之角度設定為0。，而於兩端部附近相 對向之噴嘴部24a·、24f之喷出口 26a，、26f中，將該角度設 定為30。〜60。。藉由其他噴嘴部群而形成之組之喷出口的 對向角度亦同樣地以自沿基板搬送方向X之方向之中央部 附近向兩端部附近相對於鉛垂線逐漸變大之方式而設定。 於以上述方式構成之噴霧噴嘴14a，〜14fl中，自設置於靜 止狀態（無往復旋動）之噴霧管部22a〜22f之喷嘴部24,的各 個之對向角度固定之噴出口 26,向基板W表面102噴出相同 100122571 13 201230225 喷出量之化學藥品’藉此’可於基板w之表面102 上自沿 基板搬送方向X之方向之基板中央部向兩端部，積極地產 生以箭頭符號X，所示之喷出後化學藥品之液體流動，而可 有效地防止化學鱭品產生滯留’且不用調節來自各嘴嘴部 24,之喷出量即可遍及基板W之整個表面102而達成均勺 化學藥品處理。 又，因喷嘴部24’於沿基板搬送方向X之方向呈交錯狀· 置，故可減少來自各喷嘴部24’之化學藥品喷出流之互相 擾，藉此，可更有效地防止基板表面102上之喷出化風—〇 予樂ασ 產生滯留而積極地促進化學藥品產生液體流動。 其次，對本發明之第3實施形態之基板處理裒置進行說 明。 圖4係用以說明本發明之第3實施形態之基板處理裳置中 相對於基板W表面102設置於噴霧喷嘴14"之噴霧管部 之喷嘴部24"其喷出口 26"之對向角度之模式圖，圖4(a)係 其俯視圖，圖4(b)係其剖面圖。 ’、 於第3實施形態中，-面藉由複數個搬送棍於化學藥品處 理室H)内以相對於水平面而向與基板搬送方向 方向傾斜特定角度之姿勢支撐基板w，—面使該基板％於 水平方向X往復移動。 ' 喷霧喷嘴14"係於與基板搬送方向交叉之方向等間距且互 相平行地聽學藥品處理室1G㈣設有複數個，各喷霧二 100122571 201230225 嘴Η"包括：喷霧管部22”，其於沿基板搬送方向之方向延 伸’及複數個嘴部24" ’其於対霧管部μ"之長度方向 互相接近地排成-列而設置，而將化學藥品自其喷出口 ％，， .喷出至基板W之表面102。 如圖4⑷及圖4(b)所示，與第1及第2實施形態相同，6 個喷霧喷冑Ma，·〜14f，於與基板搬送方向χ交又之方向等 間距且互相平行地配設。喷霧噴嘴14a，，〜14f，分別包括：噴 霧管部22a’’〜22f，，其於沿基板搬送方向之方向延伸；及複 數個噴嘴部24"，其於各喷霧管部22a〜22Γ之長度方向互 相接近地排成一列而設置。 而且，相對於基板W之表面1〇2以使複數個噴嘴部2舴 之喷出口 26’’之對向角度自以傾斜之姿勢搬送之基板％ 表面102之傾斜上端部附近向傾斜下端部附近而相對之 板W之表面1〇2之法線3〇〇逐漸變大之方式，將噴嘴部/基 没置於各喷霧管部22a”〜22Γ，進而該等喷嘴部24，，^ ^ 所示於與基板搬送方向交叉之方向呈交錯狀配置。 U) 1〇2 中 圖4(b)係例示藉由喷嘴部24，，中設置於沿噴霧督部 〜22f’之基板搬送方向χ方向之大致中央部之噴嘴呷 〜24Γ而形成之噴嘴部群之i組，於基板w之表篼 傾斜上端部附近相對向之喷嘴部24a"之噴出口 ％&·， 相對於基板W表面1〇2之法線3〇〇其角度設定為〇。 而於傾斜下端部附近相對向之喷嘴部24fM之噴出 100122571 15 201230225 中，將該角度設定為3〇。〜6()。。藉由其他喷嘴部群而形成 之組之喷出口的對向角度亦同樣地以自傾斜上端部附近向 下端部附近相對於基板撕表面1〇2之法線逐漸變大之方式 而設定。 於以上述方式構成之噴霧喷嘴l4a"〜Mf，中，自設置於靜 止狀態（無減旋動)之辆料22a"〜饥，之噴嘴部^，，的 各個之對向角度固定之噴出口 26，，，向基板w表面1〇2噴 出相同喷出量之化學藥品，藉此，可於基板W之表面102 上自喷出後之化學藥品之液體流動較慢之傾斜上端部附近 向化學藥品流動之觸Μ龍近，積極地產纽箭頭符號 Υ’所示之仙後之化學^之液體流動，而可有效地防止化 干藥。σ產生滯4 ’且不用調節來自各噴嘴部24,，之喷出量即 可遍及基板W之整個表面1()2而達成均勻之化學藥品處理。 又’因喷嘴部24”於與基板搬送方向X交叉之方向呈交錯 狀配置，故可減少來自各嘴嘴部24"之化學藥品喷出流之互 相干擾，藉此可更有效地防止基板表面iG2上之喷出化學藥 品產生滯留_極地促進化學藥品產生液體流動。 再者，於上述之各實施形態中，雖已對將本發明應用於使 祕刻液、㈣液、抗__等化學藥品作為處理液之化 學藥品處理之情形進行朗，但本發明並秘定於此，其亦 可應用於使Ljc等清洗液料處理社清洗處理。 又’於上述各實施形態中，雖對使用之喷霧喷嘴之個數為 100122571 201230225 6個之構成進行說明，但本發明並不受限於此，其亦可根據 基板W之尺寸或處理之種類而選擇適當個數之喷霧喷嘴。 【圖式簡單說明】 圖1係模式性地表示本發明之第丨實施形態之基板處理裝 置之概略構成圖。 圖2(a)及(b)係用以說明本發明之第1實施形態中相對於 基板表面設置於喷霧喷嘴之喷霧管部之喷嘴部之喷出口之 對向角度之模式圖。 圖3(a)及(b)係用以說明本發明之第2實施形態中相對於 棊板表面。又置於噴霧喷嘴之喷霧管部之喷嘴部之喷出口之 對向角度之模式圖。 圖4⑻及(b)係用以說明本發明之第$實施形態中相對於 土板表面η又置於噴霧噴嘴之喷霧管部之喷嘴部之喷出口之 對向角度之模式圖。 圖 系表示將處理液自先前之基板處理裝置中之喷嘴部 喷出至基板表面之情況之模式圖。 圖（）及(b)係將處理液自先前之喷霧管部往復旋動型之 基板處理裝置中之嘴嘴部喷出至基板表面之情況之模式圖。 【主要元件符鱿說明】 10 12 基板處理裝置 化學藥品處理室 化學藥品儲槽 100122571 17 201230225 14、14a、14b、14c、14d、14e、14f、14'、14a'、14b'、14c'、 14d'、14e'、14f、14"、14a"、14b"、14c"、14d"、14e"、14f' 喷霧噴嘴 16 送液泵 18 化學藥品供給路 20 循環排水路 22、22a、22b、22c、22d、22e、22f、22'、22a，、22b'、22c·、 22d'、22e'、22f、22"、22a"、22b"、22c"、22d"、22e，'、22f' 喷霧管部 24、24a、24b、24c、24d、24e、24f、24,、24a’、24b'、24c'、 24d，、24e，、24f、24’，、24a"、24b"、24c"、24d"、24e"、24f *、 100 喷嘴部 26、26a、26b、26c、26d、26e、26f、26,、26a'、26b'、26c'、 26d'、26e，、26f、26，，、26a"、26bn、26c"、26d"、26en、26f ’ 喷出口 102 基板之表面 200 水平面 300 法線 X、X， 基板搬送方向 γ、γ， 箭頭符號 W 基板 100122571 18Display), vacuum fluorescent display (VFD, Vacuum Flu〇rescem Display), glass substrate for solar panels, glass/ceramic substrate for magnetic/disc, semiconductor wafer, electronic device substrate A substrate processing apparatus that wets a substrate by various treatment liquids such as a cleaning liquid such as pure water, an etching solution, a developing solution, and a resist stripping liquid. [Prior Art] In the above-described substrate processing apparatus, there is known a device in which the surface is arranged in a horizontal posture or a plane orthogonal to the substrate transport direction by a moving direction in which the substrate transfer direction is arranged side by side. The inclined posture is to transport the substrate in the wet processing chamber, and the surface is sprayed to the surface of the substrate in a shower-like manner. In the substrate processing apparatus, the roots of the roots are sprayed with a cleaning liquid such as a nozzle from the nozzle to the surface of the substrate, a # inspection, a display, and an anti-ion treatment liquid. + 乐口口Specially, in this kind of substrate processing, a plurality of spray nozzles are arranged in parallel for the treatment liquid to uniformly supply the entire surface of the substrate and the surface of the mosquito in the direction of the riding (four) spacing of two mutual 100122571 201230225 Spraying the treatment liquid from the plurality of nozzle portions to the surface of the substrate, and the spray nozzle includes: a spray tube portion extending in a direction along a direction in which the sheet is conveyed; and a plurality of nozzle portions along the length of the spray tube portion The directions are arranged in close proximity to each other. Fig. 5 is a schematic view showing a state in which the nozzle portion 100 of the substrate processing apparatus of the prior art has ejected the treatment liquid onto the surface 1?2 of the substrate w. As shown in FIG. 5, when the processing liquid is ejected by the conventional substrate processing apparatus, the vicinity of the center portion of the surface 1〇2 of the substrate W which is conveyed at a right angle to the plane of the drawing, and the both end portions of the substrate w In the vicinity, the liquid flow of the treatment liquid becomes slower, and the retention of the treatment liquid is caused in the vicinity of the center portion, whereby the replacement of the old and new treatment liquids discharged is deteriorated, and the silk treatment is uniform. In order to solve the above problems, a device is used in which the spray nozzle portion of the spray nozzle is reciprocally rotated about a central axis of the longitudinal direction thereof to change the direction of the nozzle of the treatment liquid, thereby promoting the surface of the substrate. Replacement of the old and new treatment liquids (for example, 'refer to the patent document ^. [Prior Art Document] [Patent Document] 10-79368 [Patent Document 1] 专利本专利特开平 [Summary of the Invention] (The invention is to be solved Fig. 6 is a schematic view showing the case where the nozzle portion 100 in the reciprocating (four)-shaped base of the previous money f is placed on the substrate W, and the surface of the substrate 102 is ejected with the treatment liquid 100122571 4 201230225. A plurality of (four) (four) nozzles are disposed in parallel with each other in a direction intersecting with the substrate transport direction, and the read nozzle includes a nozzle "P", which is in a direction along the substrate (at a right angle to the plane of the drawing) Θ') extends in a direction (not shown); and a plurality of nozzle portions 100 are arranged in a line along the longitudinal direction of the spray tube, and are rotated around the central axis of each spray tube portion. A mechanism (not shown) reciprocates the plurality of spray nozzles in the direction of the arrow A in FIG. 6(a) and the direction of the arrow B in FIG. 6(b), and the surface-side treatment liquid from the nozzle portion The direction of the nozzle 102 is changed in the direction of the nozzle. However, if the reciprocating rotation is repeated, the treatment liquid temporarily ejected toward the surface of the substrate W and then moved toward the side of the substrate W will be reversed. The direction (the other side direction) flows so that the amount of the treatment liquid in the vicinity of the central portion of the substrate and the vicinity of the both end portions is different, so that the progress of the treatment is uneven. The present invention is complicated by the above-described situation. The object of the invention is to provide a substrate processing apparatus capable of preventing the treatment liquid from being discharged to the surface of the substrate and effectively achieving the self-treatment of the entire surface of the substrate. (Means for solving the problem): _Patent No. 1 The invention is characterized in that the base plate is formed in the following manner: the substrate at the substrate includes: a wet processing chamber that performs a wet processing on the substrate; and a substrate transfer device that is disposed in the wet type At The apparatus is conveyed in a horizontal direction in a horizontal position or in a horizontal direction with respect to a horizontal plane in a direction inclined to the direction in which the substrate is conveyed in a direction of 100122571 5 201230225; and a processing liquid supply means for supplying the processing liquid to the wetness The substrate transporting hand in the processing chamber is the main surface of the substrate that is transported. That is, the processing liquid supply means includes a plurality of spray nozzles. The plurality of spray nozzles are transported in the direction of the substrate transport direction or along the substrate. The directions of the directions are arranged at equal intervals and in parallel with each other, and the processing liquid is ejected onto the main surface of the substrate, and each of the plurality of spray nozzles includes a spray tube portion in a direction along the substrate transport direction or a direction in which the substrate is transported a cross direction extending; and a plurality of nozzle portions arranged in a line along the length direction of the spray moss, and the treatment liquid is ejected from the / ejection port to the main surface of the substrate to make the plurality The opposite angle of the ejection opening of the nozzle portion with respect to the main surface of the substrate from the main surface of the substrate conveyed in a horizontal posture The vicinity of the center portion in the direction in which the sheet conveyance direction intersects is gradually increased toward the vicinity of the both end portions or the vicinity of the center portion in the direction from the main surface of the substrate in the direction in which the substrate is conveyed toward the vicinity of the both ends. Or the plurality of (four) mouth portions are disposed on the plurality of sprays in such a manner that the vicinity of the inclined upper end portion of the main surface of the substrate conveyed in an inclined posture gradually increases toward the vicinity of the inclined lower end portion with respect to the main surface of the substrate. The official portion thereby actively generates a liquid flow of the treatment liquid after ejection on the main surface of the substrate. The invention of claim 2, wherein the plurality of nozzle portions of the plurality of spray nozzles disposed at equal intervals in a direction intersecting the substrate transport direction are at the intersection Side 100122571 201230225 is arranged in a staggered configuration. The invention of claim 3 is the substrate device of the first item of the scope of the invention, wherein the plurality of nozzle nozzles in the direction in which the substrate is conveyed are arranged in a staggered manner in the plurality of directions. . The invention of the fourth aspect of the invention is the apparatus according to the first item of the patent application, wherein the discharge of the nozzles from the plurality of nozzles is equal. The invention of claim 5, wherein the invention is a substrate processing apparatus according to any one of clauses 1-4 to 4, wherein the processing liquid ejected from the ejection openings of the plurality of nozzle portions is etched. liquid. According to the substrate processing apparatus of the invention of the first aspect of the invention, the main surface of the substrate and the substrate which are transported in a horizontal posture by the opposing angles of the ejection orifices of the plurality of nozzle portions with respect to the main surface of the substrate The vicinity of the center portion in the direction of the intersection, the vicinity of the both end portions, or the vicinity of the center portion in the direction in which the substrate is conveyed from the main surface of the substrate, is gradually increased toward the center of the both ends, or In the vicinity of the inclined upper end portion of the main surface of the substrate conveyed in an inclined posture, the plurality of nozzle portions are disposed in the plurality of spray tube portions in such a manner that the normal line of the main surface of the substrate is gradually increased toward the vicinity of the inclined lower end portion. . Therefore, it is possible to actively generate a liquid flow of the liquid after the ejection on the main surface of the substrate, thereby preventing the retention of the treatment liquid and achieving a uniform wet treatment over the entire main surface of the substrate 100122571 7 201230225. In the substrate processing apparatus according to the second and third aspects of the invention, the plurality of nozzle portions of the plurality of mist nozzles disposed in the direction intersecting with the substrate conveyance direction are arranged in a staggered manner in the direction of the intersection. The plurality of nozzle portions of the plurality of spray nozzles arranged at equal intervals in the direction in which the substrate is conveyed are arranged in a staggered manner in the direction in which the substrate is conveyed. Therefore, it is possible to reduce the mutual interference of the processing liquid discharge streams from the respective nozzle portions, whereby the generation of the discharge treatment liquid on the surface of the substrate can be more effectively prevented, and the flow of the liquid generated by the treatment liquid can be actively promoted. In the substrate processing apparatus of the invention of the fourth aspect of the invention, there is no need for a mechanism for adjusting the discharge amount from each nozzle portion so that the post-discharge processing liquid does not become stagnant, thereby making it possible to achieve low design cost. Chemical. In the substrate processing apparatus of the invention of the fifth aspect of the invention, the progress of the I-spotting caused by the retention of the squid which is ejected and the stagnation of the squid is different, and the etching process is not uniform. Thereby, the problem of pattern short (wiring residue) or pattern shape unevenness (mura) can be effectively prevented. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a view schematically showing a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 includes a chemical processing chamber 10 that ejects 100122571 8 8 201230225 =: 3 liquid, : _ a chemical such as chaotropic liquid, and chemicalizes the substrate W) while supporting one side in a horizontal posture. The drug treatment room is moved; the chemical storage tank 12 is reciprocating in the horizontal direction - it is used to pump chemicals to = a plurality of spray nozzles 16; and the chemical supply road 18: board The surface of W is followed by the storage of the chemical storage tank 12 Φ in the chemical spray to the spray nozzle 14. The spray nozzle 14 is attached to the chemical processing chamber parallel to the substrate, equidistantly and pouting. 14 Μ · i 1Q is provided with a plurality of nozzles ^ 22 (see (4) 2) extending in the direction of the substrate transport direction; and a plurality of nozzle portions 24 at the spray tube portion 22 The length direction is arranged close to each other in a row, and the chemical is discharged from the inner discharge port to the surface of the substrate w and the bottom of the pure chemical processing chamber H) is provided to flow down to the chemical The bottom of the processing chamber 1 has been made by the chemical (4) The drainage path 20, the circulation drainage path 20 is connected in communication with the chemical storage tank 12. In the substrate processing apparatus i including the above-described structure, first, the substrate from the chemical processing chamber 1 is supported in a horizontal posture by transporting the Kyukon. The inlet ' (not shown) is carried into the substrate w in the chemical processing chamber 10, and the substrate w is reciprocated in the horizontal direction, and the surface is stored in the chemical storage tank 12 by the driving of the feed 16 The chemical is sent to the spray nozzle 14 via the chemical supply path 18, and the same amount of chemical is ejected from the nozzle portion 24 of the spray nozzle u to the surface 102 of the substrate W, thereby performing chemical treatment. The substrate W after the completion of the chemical treatment is carried out from the substrate transfer port (not shown) of the chemical processing chamber 10 by the transfer roller. The chemical flowing down from the surface 102 of the substrate W and flowing down to the bottom of the chemical processing chamber 10 is passed through. The circulation drain 20 is recycled to the chemical storage tank 12. Fig. 2 is a view for explaining the discharge port 26 of the nozzle portion 24 provided in the spray pipe portion 22 constituting the spray nozzle 14 with respect to the base. FIG. 2(a) is a plan view of the opposite direction of the surface W of the panel W, and FIG. 2(b) is a cross-sectional view thereof. As shown in FIG. 2(a) and FIG. 2(b), a plurality of In the present embodiment, the six spray nozzles 14a to 14f are disposed at equal intervals in the direction intersecting the substrate conveyance direction X. The spray nozzles 14a to 14f respectively include the spray tube portions 22a to 22f' The direction in which the substrate is conveyed is extended, and a plurality of nozzle portions 24' are arranged in a line in the longitudinal direction of each of the spray tube portions 22a to 22f. Further, a plurality of the surfaces 1 to 2 are formed on the surface of the substrate W. The direction of the opposite direction of the discharge port 26 of the nozzle unit 24 is increased from the vicinity of the center portion toward the vicinity of both end portions from the vicinity of the center portion to the vicinity of the both ends of the substrate w1 〇 2 conveyed in the horizontal posture and the substrate transfer direction X. As a result, the nozzle portion 24 is provided in each of the spray tube portions 22a to 22f', and the nozzle portions 24 are arranged in a staggered direction in the direction in which the substrate transfer direction X intersects as shown in Fig. 2 (4). Fig. 2(b) shows a group of nozzle groups formed by the nozzle portions 24a to 24f provided in the substantially central portion of the substrate transport direction x of the spray tube portions 22a to 100122571 201230225 22f in the nozzle portion 24 The angle with respect to the perpendicular line is set to 〇 in the discharge ports 26c and 26d of the nozzle portions 24c and 24d which are opposed to the vicinity of the central portion in the direction in which the substrate is conveyed. In the discharge ports 26a and 26f of the nozzle portions 24a and 24f which are opposed to each other near the both end portions, the angle is set to 30. ~60. . Similarly, the opposing angle of the discharge port of the group formed by the other nozzle group group with respect to the surface 1〇2 of the substrate W is similar to the lead near the center portion in the direction intersecting the substrate conveyance direction X. Set as the way the vertical line becomes larger. In the spray nozzles 14a to 14f configured as described above, the respective outlets 26 of the nozzle portions 24 of the spray tube portions 22a to 22f which are provided in a stationary state (without reciprocating rotation) are fixed to the substrate w. The surface of the substrate W is sprayed with the same amount of the chemical, so that the surface of the substrate W can be generated from the central portion of the substrate in the direction in which the substrate is conveyed in the direction of the substrate. The liquid of the chemical after the ejection shown by the symbol γ can prevent the chemical from staying, and it is possible to achieve the uniformity of the entire surface 102 of the substrate w without adjusting the discharge amount from each nozzle portion. . In this way, it is possible to prevent the chemical substances to be directly discharged from the respective squirt portions 24 and to cause the retention of the chemical treatment liquid after the nozzles are discharged. Therefore, it is not necessary to prevent the occurrence of the retention of the species to adjust the nozzles from each nozzle: 24 It is possible to reduce the design cost by using a troublesome mechanism such as the amount of chemical discharge. Further, ν ϊ For example, when the etching process is performed using aluminum as a chemical, the etching process of aluminum 100122571 11 201230225 may cause a difference in the progress of the generated portion and the non-occurring portion due to the retention of the ejected liquid. The etching process is not uniform, whereby the problem of pattern short-circuit (residual wiring) or uneven pattern shape can be effectively prevented. Further, since the mouth portions 24 are arranged in a staggered manner in the direction in which the substrate transfer direction X intersects, mutual interference with the chemical discharge flows from the nozzle portions 24 can be reduced, whereby the substrate surface can be more effectively prevented. The squirting chemical on the 1〇2 is retained to actively promote the flow of liquid from the chemical. Next, the substrate processing shock of the second embodiment of the present invention will be described. 3 is a view showing a discharge port 26' of the nozzle portion 2' of the spray tube portion 22' of the spray nozzle 14' with respect to the surface 102 of the substrate W in the substrate processing apparatus according to the second embodiment of the present invention. Fig. 3(a) is a plan view of the mode of the opposite angle, and Fig. 3(b) is a cross-sectional view thereof. In the second embodiment, the spray nozzles 14' are disposed in the chemical processing chamber 10 at equal intervals in the direction in which the substrate is conveyed, and are disposed in parallel with each other. 22'' extends in a direction crossing the substrate transport direction; and a plurality of nozzle portions 24' are arranged in a line in the longitudinal direction of the nozzle mist tube portion 22', and the chemical is sprayed therefrom The outlet 26' is ejected to the surface 102 of the substrate W. As shown in Fig. 3 (a) and Fig. 3 (b), in the same manner as in the first embodiment, the six spray nozzles 14a' to 14f are equally spaced in the direction of the substrate transport direction X and are flat with each other 100J22571 201230225. Assume. Each of the spray nozzles 14'a to 14f includes a spray tube portion 22a to 22f' extending in a direction crossing the substrate conveyance direction, and a plurality of nozzle portions 24' at the respective spray tube portions 22a' to 22f. The length directions are arranged in a line close to each other. Further, 'the surface 102 of the substrate W is such that the opposing angles of the plurality of nozzle portions 24 and the discharge ports 26' are transferred from the vicinity of the center portion of the substrate W surface 102 in the horizontal direction of the substrate transport direction X direction The nozzle portion 24 is provided in each of the spray nozzles 14a' to 14f so as to gradually increase in the vicinity of the portion with respect to the vertical line. Further, the nozzle portions 24' are transported along the substrate as shown in Fig. 3(a). The direction of the direction X is staggered. Fig. 3 (b) shows a group of nozzle groups formed by the nozzle portions 24a to 24f provided in the substantially central portion in the direction in which the spray tube portions 22a' to 22f intersect the substrate transport direction X in the nozzle portion 24'. The angle with respect to the vertical line is set to 0 in the discharge ports 26c' and 26d' of the nozzle portions 24c and 24d which are opposed to each other in the vicinity of the central portion in the substrate transport direction X direction. The angle is set to 30 in the discharge ports 26a and 26f of the nozzle portions 24a and 24f facing the opposite end portions at both end portions. ~60. . Similarly, the opposing angle of the discharge port of the group formed by the other nozzle group is set so as to gradually increase from the vicinity of the center portion in the direction along the substrate transport direction X to the vicinity of the both ends. In the spray nozzles 14a to 14fl configured as described above, the nozzles 24 of the spray tube portions 22a to 22f which are provided in a stationary state (without reciprocating rotation) are fixed to the discharge port 26 having a fixed angle of opposite direction. The surface of the substrate W is ejected by the same 100122571 13 201230225. The amount of the chemical can be generated by the arrow symbol on the surface 102 of the substrate w from the central portion of the substrate in the direction of the substrate transport direction X to both ends. X, the liquid flow of the chemical after the ejection is shown, and the chemical product can be effectively prevented from being retained, and the discharge amount from each nozzle portion 24 can be prevented, and the discharge amount can be achieved over the entire surface 102 of the substrate W. All spoons of chemical treatment. Further, since the nozzle portions 24' are staggered in the direction along the substrate transport direction X, mutual interference with the chemical discharge flows from the nozzle portions 24' can be reduced, whereby the substrate surface can be more effectively prevented. On the 102, the spurt of the wind - 〇 乐 α α σ generates retention and actively promotes the flow of liquid from the chemical. Next, a substrate processing apparatus according to a third embodiment of the present invention will be described. 4 is a view for explaining the angle of the nozzle portion 24" of the spray nozzle 26" of the spray nozzle portion of the spray nozzle 14" with respect to the surface W of the substrate W in the substrate processing skirt according to the third embodiment of the present invention; Fig. 4(a) is a plan view, and Fig. 4(b) is a cross-sectional view thereof. In the third embodiment, the substrate is supported by the substrate w in a posture inclined at a specific angle with respect to the horizontal direction with respect to the horizontal direction by a plurality of transporting sticks in the chemical processing chamber H). % reciprocates in the horizontal direction X. 'The spray nozzles 14' are provided at a plurality of equal intervals and parallel to each other in the direction in which the substrate is conveyed, and the plurality of spray treatments 1G (4) are provided, and each spray 2100122571 201230225 mouth Η" includes: spray tube portion 22", It is disposed in a direction along the direction in which the substrate is conveyed and a plurality of nozzles 24' are arranged in a row in the longitudinal direction of the mist tube portion μ", and the chemical is discharged from the nozzle thereof by %, The surface 102 of the substrate W is ejected. As shown in Fig. 4 (4) and Fig. 4 (b), in the same manner as in the first and second embodiments, the six spray squirts Ma, ..., 14f are in the direction of substrate transfer. The spray nozzles 14a, 14f are respectively disposed at equal intervals and are parallel to each other. The spray nozzles 14a, 14f, respectively include: spray tube portions 22a'' to 22f extending in the direction of the substrate transport direction; and a plurality of nozzle portions 24", which is disposed in a line in the longitudinal direction of each of the spray tube portions 22a to 22, and is provided with a plurality of nozzle portions 2's discharge port 26'' with respect to the surface 1〇2 of the substrate W. Substrate that is transported in a tilted position % The vicinity of the inclined upper end portion of the surface 102 is gradually enlarged toward the vicinity of the inclined lower end portion with respect to the surface 1〇2 of the surface W of the plate W, and the nozzle portion/base is not placed in each of the spray tube portions 22a" 〜22Γ, and the nozzle portions 24, ^^ are arranged in a staggered manner in a direction intersecting the substrate transport direction. U) 1 〇 2 FIG. 4 (b) shows a nozzle portion formed by a nozzle 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 In the group i, the angle %& of the nozzle portion 24a" in the vicinity of the inclined upper end portion of the substrate w is set to 〇 with respect to the normal line 3 of the surface W2 of the substrate W. In the vicinity of the inclined lower end portion, the discharge is directed to the nozzle portion 24fM 100122571 15 201230225, and the angle is set to 3 〇. ~6(). . Similarly, the opposing angle of the discharge port of the group formed by the other nozzle group is set to be gradually increased from the vicinity of the inclined upper end portion toward the vicinity of the lower end portion with respect to the normal line of the substrate tearing surface 1〇2. In the spray nozzles l4a "~Mf which are configured as described above, the nozzles of the vehicle 22a"~the hunger, which are provided in the stationary state (without reducing the rotation), are fixed at opposite angles 26,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The flow of medicines is close to the dragon, and the active real estate arrow symbol Υ 'shows the liquid flow of the chemical after the immortal, which can effectively prevent the dry medicine. The σ generation lag 4 ′ and the discharge amount from each nozzle portion 24 is not adjusted, so that the uniform surface chemical treatment can be achieved over the entire surface 1 () 2 of the substrate W. Further, since the nozzle portions 24 are arranged in a staggered manner in the direction intersecting the substrate transport direction X, mutual interference with the chemical discharge streams from the respective nozzle portions 24" can be reduced, whereby the substrate surface can be more effectively prevented. The squirting of the squirting chemical on the iG2 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Although the drug is treated as a chemical treatment of the treatment liquid, the present invention is also disclosed herein, and it can also be applied to a cleaning treatment such as Ljc, which is used in the above-described respective embodiments. Although the number of the spray nozzles is 100122571 201230225, the configuration is not limited thereto, and an appropriate number of spray nozzles may be selected depending on the size of the substrate W or the type of processing. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a schematic configuration of a substrate processing apparatus according to a third embodiment of the present invention. Fig. 2 (a) and (b) are views for explaining the first embodiment of the present invention. Fig. 3 (a) and (b) are diagrams for explaining the opposite angle of the discharge port of the nozzle portion of the spray nozzle portion of the spray nozzle. Fig. 3 (a) and (b) are for explaining the second embodiment of the present invention. Figure 4 (8) and (b) are used to illustrate the surface of the invention in relation to the surface of the earth plate of the spray nozzle of the spray nozzle. η is a schematic view of the opposite angle of the discharge port of the nozzle portion of the spray nozzle portion of the spray nozzle. The figure shows the mode of discharging the treatment liquid from the nozzle portion of the previous substrate processing device to the surface of the substrate. Fig. () and (b) are schematic diagrams showing the case where the treatment liquid is ejected from the mouth portion of the substrate processing apparatus of the reciprocating rotary type of the previous spray tube portion to the surface of the substrate. 】 10 12 substrate processing device chemical processing room chemical storage tank 100122571 17 201230225 14, 14a, 14b, 14c, 14d, 14e, 14f, 14', 14a', 14b', 14c', 14d', 14e', 14f , 14", 14a", 14b", 14c", 14d", 14e&qu Ot;, 14f' spray nozzle 16 liquid supply pump 18 chemical supply path 20 circulating drainage paths 22, 22a, 22b, 22c, 22d, 22e, 22f, 22', 22a, 22b', 22c, 22d', 22e', 22f, 22", 22a", 22b", 22c", 22d", 22e, ', 22f' spray tube portions 24, 24a, 24b, 24c, 24d, 24e, 24f, 24, 24a', 24b', 24c', 24d, 24e, 24f, 24', 24a", 24b", 24c", 24d", 24e", 24f*, 100 nozzle sections 26, 26a, 26b, 26c, 26d, 26e , 26f, 26, 26a', 26b', 26c', 26d', 26e, 26f, 26,, 26a", 26bn, 26c", 26d", 26en, 26f 'spray 102 substrate surface 200 water level 300 normal X, X, substrate transport direction γ, γ, arrow symbol W substrate 100122571 18

Claims (1)

201230225 七、申請專利範圍： 1.一種基板處理裝置，其包括： 濕式處理室，其對基板進行濕式處理； 基板搬送手段，其配設於上述濕式處理室内’以水平姿勢 或相對於水平㈣向與基_送方向正交之㈣傾斜之姿 勢沿水平方向搬送基板；及 處理液縣手段，其料叫料至藉㈣辦上述澡式 處理室内之上述基板搬送手段而搬送之基板之主表面：如此 之基板處理裝置中，其特徵為： 上述處理液供給手段包括複數個嗔霧嘴嘴， 該複數個噴霧㈣於與上述基板搬送方向交叉之方向或 沿上达基板搬送方向之方向等間距且互相平行地配置，且將 處理液喷出至基板之主表面， 各上述複數個噴霧噴嘴包括： 喷霧管^其於沿上述基板搬送方向之方向或與上述基板 搬送方向交叉之方向延伸’及複數個喷嘴部，其沿該嘴霧管 部之長度方向互相接近地排成—列而設置，將處理液自其喷 出口喷出至基板之主表面， 、 相對於基板之主表面以使上述複數個喷嘴部之喷出口之 對向角度自以水平姿勢搬送之基板之主表面之與上述基板 搬送方向交叉之方向之+央侧近向兩端雜近、或者自基 板之主表面之沿著上述基板搬送方向之方向之中央部附近 100122571 19 201230225 向兩端部附近而相對於鉛垂線逐漸變大之方式，或者自以傾 斜之姿勢搬送之基板之主表面之傾斜上端部附近向傾斜下 端部附近而相對於基板之主表面之法線逐漸變大之方式，將 上述複數個喷嘴部設置於上述複數個喷霧管部，藉此積極地 於基板之主表面上產生喷出後之處理液之液體流動。 2. 如申請專利範圍第1項之基板處理裝置，其中，於與上 述基板搬送方向交叉之方向等間距地配置之上述複數個喷 霧喷嘴之上述複數個喷嘴部於該交叉方向呈交錯狀配置。 3. 如申請專利範圍第1項之基板處理裝置，其中，於沿基 板搬送方向之方向等間距地配置之上述複數個喷霧喷嘴之 上述複數個喷嘴部於沿該基板搬送方向之方向呈交錯狀配 置。 4. 如申請專利範圍第1項之基板處理裝置，其中，自上述 複數個喷嘴部之喷出口所喷出之處理液之喷出量相等。 5. 如申請專利範圍第1至4項中任一項之基板處理裝置， 其中，自上述複數個喷嘴部之噴出口所喷出之處理液為蝕刻 液。 100122571 20201230225 VII. Patent application scope: 1. A substrate processing apparatus, comprising: a wet processing chamber that performs wet processing on a substrate; and a substrate transporting means disposed in the wet processing chamber in a horizontal posture or relative to Level (4) transporting the substrate in the horizontal direction to the (four) inclined posture orthogonal to the base_feeding direction; and processing the liquid county means, the material is called to the substrate which is transported by the substrate transfer means in the bath type processing chamber Main surface: In the substrate processing apparatus, the processing liquid supply means includes a plurality of mist nozzles, and the plurality of sprays (4) are in a direction crossing the substrate transport direction or in a direction in which the substrate transport direction is up Arranging at equal intervals and parallel to each other, and discharging the processing liquid to the main surface of the substrate, each of the plurality of spray nozzles includes: a spray tube in a direction along the substrate transport direction or a direction intersecting the substrate transport direction Extending 'and a plurality of nozzle portions arranged along the length direction of the nozzle tube portion to be arranged in a row-arranged manner The processing liquid is ejected from the ejection port to the main surface of the substrate, and the main surface of the substrate is transported to the substrate from the main surface of the substrate by the opposite direction of the ejection opening of the plurality of nozzle portions from the horizontal position The direction in which the direction intersects is close to the proximal end of the central side, or the vicinity of the central portion of the main surface of the substrate along the direction in which the substrate is transported. 100122571 19 201230225 gradually increases toward the vertical line toward the vicinity of both end portions Or the method of arranging the plurality of nozzle portions in the vicinity of the inclined upper end portion of the main surface of the substrate conveyed in an inclined posture toward the vicinity of the inclined lower end portion and gradually increasing with respect to the normal line of the main surface of the substrate A plurality of spray tubes are used to actively generate a liquid flow of the treated liquid after ejection on the main surface of the substrate. 2. The substrate processing apparatus according to the first aspect of the invention, wherein the plurality of nozzle portions of the plurality of spray nozzles arranged at equal intervals in a direction intersecting with the substrate transport direction are arranged in a staggered manner in the intersecting direction . 3. The substrate processing apparatus according to claim 1, wherein the plurality of nozzle portions of the plurality of spray nozzles arranged at equal intervals in the direction of the substrate transport direction are staggered in a direction along the substrate transport direction Configuration. 4. The substrate processing apparatus according to claim 1, wherein the discharge amount of the treatment liquid discharged from the discharge ports of the plurality of nozzle portions is equal. 5. The substrate processing apparatus according to any one of claims 1 to 4, wherein the processing liquid discharged from the ejection openings of the plurality of nozzle portions is an etching liquid. 100122571 20
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