WO2002043441A1 - Element chauffant en ceramique et procede de production - Google Patents
Element chauffant en ceramique et procede de production Download PDFInfo
- Publication number
- WO2002043441A1 WO2002043441A1 PCT/JP2001/010285 JP0110285W WO0243441A1 WO 2002043441 A1 WO2002043441 A1 WO 2002043441A1 JP 0110285 W JP0110285 W JP 0110285W WO 0243441 A1 WO0243441 A1 WO 0243441A1
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- Prior art keywords
- heating element
- resistance heating
- ceramic
- ceramic heater
- resistance
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
Definitions
- Ceramic heater and method for manufacturing ceramic heater
- the present invention relates to a ceramic heater for manufacturing or inspecting a semiconductor mainly used in the semiconductor industry, and a method for manufacturing a ceramic heater.
- a typical example of a semiconductor chip is a silicon wafer prepared by slicing a silicon single crystal to a predetermined thickness and manufacturing a silicon wafer. It is manufactured by forming various circuits and the like on this silicon wafer.
- an aluminum substrate is provided with a resistance heating element such as an electric resistor on the back side of a substrate.
- ⁇ was frequently used, but aluminum substrates require a thickness of about 15 mm, so they are heavy and bulky, making them not always convenient to handle and not only temperature-responsive to current flow. The temperature controllability of the semiconductor wafer was insufficient, and it was not easy to heat the semiconductor wafer uniformly.
- Japanese Patent Application Laid-Open No. 11-43030 discloses that a substrate made of a nitride ceramic / carbide ceramic having a high thermal conductivity and a high strength is used as a substrate. There is disclosed a ceramic heater in which a heat generator formed by sintering metal particles is provided on the surface of a ceramic substrate.
- the heater used in such a semiconductor manufacturing apparatus is required to have durability against oxidation of the surface of the resistance heating element because the surface of the resistance heating element is easily affected by light heat or processing gas when using the semiconductor manufacturing apparatus. Is done. Accordingly, the present inventor conducted a study for the purpose of forming a resistance heating element having excellent durability, and as a result, by providing an insulating coating on the resistance heating element formed on the ceramic substrate, the resistance of the heating element was improved. It has been found that it becomes a ceramic heater with excellent durability such as chemical properties. However, since the insulating coating can also serve as a heat insulating material for the resistance heating element, it may not be possible to quickly cool the ceramic heater when cooling it after heating.
- a method of forming a resistance heating element when manufacturing such a ceramic heater conventionally, a ceramic substrate having a predetermined shape is manufactured, and then the resistance heating element is formed by a coating method using a method such as screen printing. And a method of forming a resistance heating element using a physical vapor deposition method such as sputtering or a plating method.
- a conductor paste layer of a heating element pattern is formed on the surface of the ceramic substrate using a method such as screen printing, and heating is performed. Then, firing was performed to form a resistance heating element.
- a t-lamic substrate having a predetermined shape is manufactured, and then a metal layer is formed on a predetermined region of a ceramic substrate by these methods.
- an etching resist is formed so as to cover the portion of the heating element pattern, and then an etching process is performed to form a resistive heating element of a predetermined pattern. Is covered with a resin or the like, and thereafter, the above-described processing is performed to form a resistance heating element of a predetermined pattern on the surface of the ceramic substrate in a single processing.
- a precise pattern can be formed.
- a photolithographic method is applied to the surface of the ceramic substrate. Etching resist using Therefore, there is a problem that the cost is high because a resist or the like must be formed.
- a method having the advantage that a precise heating element pattern can be formed at relatively low cost that is, forming a strip-shaped or annular conductor layer having a predetermined width.
- a portion other than the heating element pattern is removed to form a precise heating element pattern. Irradiation has been used to adjust the thickness of the resistance heating element, or to remove a part of the resistance heating element to precisely adjust the resistance value.
- the surface of the resistance heating element or the conductor layer is smooth, and when performing trimming by irradiation with laser light, the laser light is reflected on the surface of the resistance heating element, and the resistance heating element Alternatively, the conductor layer could not be trimmed as set, resulting in variations in depth and width.
- the present invention has been studying to solve the problem that the ceramic heater cannot be quickly cooled, and by adjusting the surface roughness of the insulating coating, the insulating coating has a heat radiation fin.
- the temperature of the resistance heating element rapidly decreased during cooling, and as a result, it was found that the temperature of the ceramic heater could be rapidly decreased, and the first invention was completed.
- a ceramic heater according to a first aspect of the present invention is a ceramic heater in which a resistance heating element including one or more circuits is disposed on a surface of a ceramic substrate, and the resistance heating element is provided with an insulating coating.
- the surface roughness Ra of the surface of the insulating coating based on JISB 0601 is 0.01 to: L0 // m, preferably 0.03 to 5 / xm. It is a feature.
- this insulating coating since the surface roughness Ra of the surface of the insulating coating according to JISB 061 is adjusted to 0.01 to 10 / im, this insulating coating is However, it plays a role of keeping the resistance heating element warm to some extent, and when there is a coolant around it, the rough surface formed on the surface of the insulating coating acts as a radiation fin and is cooled relatively quickly. . Therefore, when the temperature of the ceramic heater is increased, the temperature can be quickly increased. On the other hand, when the temperature of the ceramic heater is increased and then cooled, the resistance heating element can be rapidly decreased. As a result, the temperature of the ceramic heater can be rapidly lowered.
- the surface roughness R a of the insulating coating surface further 0.0 With 3 to 5 M m, it is possible to reduce variations in heating rate.
- an insulating coating is provided on the surface of the resistance heating element instead of forming a metal film by plating or the like, when a current of about 30 to 30 OV is applied to the resistance heating element, In this way, the inconvenience that current flows on the surface of the resistance heating element does not occur, and the resistance heating element can be protected by this insulating covering.
- the resistance heating element is covered with an insulating covering, so that oxidation and sulfidation by oxygen or SOX in the air are almost eliminated. It does not proceed, and it is possible to prevent a change in the resistance of the resistance heating element.
- the resistance heating element When the resistance heating element is covered by plating, the current easily flows to the plated part due to the difference between the resistance of the resistance heating element and the resistance of the plating part. It is necessary to reduce the resistance of the body.
- the resistance heating element when the resistance heating element is coated with an insulating coating, no current flows through the coating because the coating is an insulator, and the resistance value of the resistance heating element can be set high. The heating value can be increased. The force can be increased or the resistance value can be reduced to obtain the same heating value.
- the surface roughness Ra of the surface of the insulating coating is less than 0.01 m, the heat dissipation function of the insulating coating is reduced, so that the cooling rate becomes slow when cooling the ceramic heater.
- the surface roughness Ra of the surface of the insulating coating exceeds 10 / m, air tends to stay in the valleys of the rough surface, and the cooling rate is reduced.
- the surface roughness Ra of the insulating coating is preferably from 0.33 to 5 ⁇ . This is because the variation in the heating rate is reduced.
- Ra is the product of the absolute values of the surface roughness curves.
- Rmax is the difference between the peak and the valley in the surface roughness curve, and there is no correlation between the two.
- the insulating coating is provided so as to integrally cover a resistance heating element composed of two or more circuits over an area including a portion where the circuit is formed, the above-described effect is obtained.
- the migration of the metal (for example, silver, etc.) constituting the resistance heating element can prevent a short circuit or the like from occurring in the resistance heating element.
- the coating layer can be easily formed by screen printing or the like over the entire region including the portion where the circuit is formed, so that the coating cost is reduced. Therefore, it becomes an inexpensive heater.
- the ceramic substrate constituting the ceramic heater of the first invention is preferably made of nitride ceramic or carbide ceramic.
- Nitride ceramics and carbide ceramics are suitable for heater substrates because they have excellent thermal conductivity to conduct the heat generated by the resistance heating element, and also have excellent corrosion resistance to processing gases in semiconductor manufacturing equipment. Because there is.
- the insulating coating can be made of oxide glass. This is because oxide glass applicable to these uses has high adhesion strength to a ceramic substrate and a resistance heating element, is chemically stable, and has good electrical insulation.
- the insulating cover may be made of a heat-resistant luster material. This is because the heat-resistant resin material applicable to these uses also has a high adhesion strength to the ceramic substrate and the resistance heating element, has good electric insulation, and can be formed at a relatively low temperature.
- the heat resistance means that the device can be used at 150 ° C. or higher.
- At least one of a polyimide resin and a silicone resin can be selected.
- the heating surface is opposite to the side on which the resistance heating element is formed, and it is desirable to process the semiconductor wafer on the heating surface side. Since the heat generated by the resistance heating element is diffused while propagating through the ceramic substrate, a temperature distribution similar to the resistance heating element pattern is unlikely to occur, and the uniformity of the heating surface is confirmed. Because it can be maintained.
- the semiconductor wafer may be placed on the heating surface. Further, a through hole is formed in the ceramic substrate, or a recess is formed in the surface of the ceramic substrate, and a support pin is provided in the through hole or the recess with a tip slightly protruding from the surface of the ceramic substrate.
- the semiconductor wafer may be held and heated at a distance of about 5 to 2000 / xm from the heating surface by a pin.
- Japanese Patent Application Laid-Open No. Hei 6-131 161 discloses a structure in which a ceramic substrate is covered with a resin. In this publication, an object to be heated is placed on a heating element. Therefore, the idea is completely different from the present invention.
- Japanese Patent No. 2724705 discloses that the aluminum nitride is formed by applying an alkoxide, a metal powder, and a glass powder on the surface of an aluminum nitride sintered body and firing it. Discloses a method of depositing a metal layer on the surface of a porous sintered body.
- This patent relates to a package substrate, in which the metal layer is a resistance heating element, and the opposite of the surface on which the resistance heating element is formed. It is neither described nor suggested that the side surface is a heating surface or that a resistance heating element is provided with an insulating coating, and the novelty and inventive step of the present invention are not hindered.
- the ceramic heater of the first aspect of the present invention may have a cooling mechanism.
- this cooling mechanism include those using a cooling medium such as an air-cooling device or a water-cooling device.
- the heat exchange is performed by directly spraying the cooling medium on the ceramic substrate or passing a cooling pipe through the device or the ceramic substrate. May be performed.
- gases such as air, nitrogen, argon, helium, and carbon dioxide can be used, and liquids such as water, ammonia, and ethylene glycol can also be used.
- the ceramic heater according to the first aspect of the present invention has the same effect even when cooling is performed. '
- the present inventors have a problem that when performing trimming by irradiation using a laser beam in the manufacture of a ceramic heater, the resistance heating element or the conductor layer may not be trimmed as set.
- the resistance heating element or the conductor layer may not be trimmed as set.
- the present inventors have found that the layers can be trimmed with little variation and almost as set, and have completed the manufacturing method of the present invention.
- a method for manufacturing a ceramic heater for adjusting a resistance value of a resistance heating element comprising:
- the resistance heating element When forming a resistance heating element on the surface of the ceramic substrate, the resistance heating element has a surface roughness Ra based on JISB 0601 of 0.01 ⁇ m or more. .
- a band-shaped or annular conductor layer is formed in a predetermined region on the surface of a ceramic substrate, and then a part of the conductor layer is trimmed by irradiating a laser beam.
- a surface roughness Ra of the conductor layer based on JIS B 0601 is set to 0.01 ⁇ or more.
- the surface roughness Ra of the resistance heating element or the conductor layer on the ceramic substrate surface based on JISB 061 is not less than 0.01 / xm, The laser light can be prevented from being reflected, and the laser light can be absorbed by the resistance heating element or the conductor layer. As a result, the resistance heating element or the conductor layer can be trimmed as set.
- the surface roughness Ra of the resistance heating element or the conductor layer of the ceramic substrate surface based on JISB 0601 is less than 0.01 / xm, the laser light is reflected, and the energy is dispersed. A groove or notch smaller than the set value is formed, and the resistance value of the resistance heating element becomes too smaller than the set value, or a resistance heating element having a pattern (width) different from the set pattern is formed.
- the surface roughness of the conductor layer is preferably 0.1 to 10 ⁇ .
- the resistance value is adjusted using laser light, so that the resistance is precisely adjusted in a relatively short time with little variation in depth and width. As a result, the temperature of the surface for heating the semiconductor wafer or the like (hereinafter referred to as the heating surface) can be made uniform, and the object to be heated such as the semiconductor wafer can be heated at a uniform temperature. .
- the third method for manufacturing a ceramic heater of the present invention it is possible to form a resistance heating element pattern having a small variation in depth and width in a relatively short time, and to suppress the manufacturing cost, Complex and precise patterns can be formed.
- the ceramic heater having such a heating element pattern is relatively inexpensive, has a complicated and precise pattern, and can make the temperature of the heating surface uniform with high accuracy.
- a ceramic heater according to a fourth aspect of the present invention is a ceramic heater in which a resistance heating element is formed on a surface of a ceramic substrate,
- a groove or notch is formed in a part of the resistance heating element
- a ceramic heater characterized in that the surface of the resistance heating element has a surface roughness Ra based on JIS B 0601 of not less than 0.01 ⁇ .
- This ceramic heater has a large surface roughness on the surface of the resistance heating element, so that the atmosphere can stay there, preventing the flow of air in the grooves and notches of the resistance heating element, This can suppress the occurrence of a low-temperature portion caused by the generation. Therefore, the temperature uniformity of the heated surface can be further improved.
- the surface roughness Ra of the surface of the resistance heating element is less than 0.01 / Xm, the atmospheric gas on the surface of the resistance heating element flows, and the effect of preventing the occurrence of low-temperature spots due to cutouts and grooves is obtained. I can't.
- the resistance heating element is covered with an insulating layer. Resistance heating element table When a coating layer (glass or resin) is formed on the surface, cracks are less likely to occur due to thermal shock if the surface roughness of the resistance heating element is large.
- the surface roughness Ra of the surface of the resistance heating element is preferably 15 zm or less. If the thickness exceeds 15 / ⁇ m, irregularities in the width of grooves and notches will increase due to irregular reflection of the laser.
- FIG. 1 is a bottom view schematically showing one embodiment of the ceramic heater according to the first present invention.
- FIG. 2 is a partially enlarged sectional view showing a part of the ceramic heater shown in FIG.
- FIG. 3 is a bottom view schematically showing another embodiment of the ceramic heater according to the first present invention.
- FIG. 4 is a partially enlarged cross-sectional view showing a part of the semi-heater shown in FIG.
- FIG. 5 is a bottom view schematically showing still another embodiment of the ceramic heater according to the first present invention.
- FIG. 6 is a graph showing the measurement results of the surface roughness of the insulating coating constituting the ceramic heater according to Example 1.
- FIG. 7 is a graph showing the measurement results of the surface roughness of the insulating coating constituting the ceramic heater according to the second embodiment.
- FIG. 8 is a graph showing the measurement results of the surface roughness of the insulating coating constituting the ceramic heater according to the third embodiment.
- FIG. 9 is a graph showing the measurement results of the surface roughness of the insulating coating constituting the ceramic heater according to Example 4.
- FIG. 10 is a graph showing the measurement results of the surface roughness of the insulating coating constituting the ceramic heater according to Example 5.
- FIG. 11 is a block diagram showing an outline of a laser trimming apparatus used in the second and third methods of manufacturing a ceramic heater according to the present invention.
- FIG. 12 is a perspective view schematically showing a groove formed when the resistance heating element is subjected to a trimming process.
- FIG. 13 is a bottom view schematically showing an example of a ceramic heater manufactured by the second and third methods for manufacturing a ceramic heater of the present invention.
- FIG. 14 is a partially enlarged cross-sectional view of the ceramic heater shown in FIG.
- FIG. 15 is a plan view schematically showing another example of the ceramic heater manufactured by the second and third manufacturing methods of the present invention.
- FIGS. 16A to 16D are cross-sectional views schematically showing a part of a manufacturing process of the second and third ceramic heaters of the present invention.
- FIG. 17 is a chart showing the surface roughness of the surface of the resistance heating element formed in the ceramic heater according to Example 14.
- FIG. 18 is a chart showing the surface roughness of the surface of the conductor layer formed on the ceramic substrate according to Example 15; ⁇ Explanation of sign
- FIG. 1 is a bottom view schematically showing one embodiment of the ceramic heater of the present invention
- FIG. 2 is a partially enlarged sectional view of the ceramic heater.
- the ceramic heater 10 uses a disc-shaped ceramic substrate 11 made of insulating nitride ceramic or carbide ceramic, and has a substantially linear resistance heating element 1 on one main surface of the ceramic substrate 11.
- a circuit is formed by arranging the objects 2 in the concentric shape shown in FIG. 1, and the object to be heated such as a silicon wafer 19 is mounted on another main surface (hereinafter referred to as a heating surface) 11a. It is configured so that it is placed or kept at a certain distance from the heating surface 11a and heated.
- a through hole 15 is formed in a portion near the center of the ceramic substrate 11, and lifter pins 16 are passed through the through hole 15 to support the silicon wafer 19. It has become.
- a bottomed hole 14 for inserting a temperature measuring element such as a thermocouple is formed in the bottom surface 1 lb.
- the surface roughness Ra of the surface is 0.01 to 10 ⁇ at a predetermined thickness on the surface of the resistance heating element 12.
- the durability such as oxidation resistance and sulfidation resistance is improved.
- an external terminal 13 is connected to an end of the resistance heating element 12, and an insulating coating 17 is formed on a part of the external terminal 13. This is usually the case where the insulating terminal 17 is formed after the external terminal 13 is connected to the end of the resistance heating element 12.
- the insulating cover 17 When the insulating cover 17 is formed before the external terminal 13 is connected, the insulating cover 17 cannot be provided at a portion where the external terminal 13 is connected. Therefore, in this case, the insulating cover 17 is not usually formed at the portion to which the external terminal 13 is connected. However, after connecting the external terminals 13, the coating may be performed again, and the insulating cover 17 may be formed at the portion where the external terminals 13 are connected.
- the rough surface formed on the surface of the insulating cover acts as a radiation fin, so that the resistance heating element is cooled quickly, and as a result, the ceramic heater is rapidly cooled. Cooling is realized.
- the surface roughness Ra of the surface of the insulating coating is less than 0.001 l / zm, the heat retaining effect is too high, so that when the temperature of the ceramic substrate is raised, the temperature can be raised efficiently.
- the rate of temperature drop of the resistance heating element becomes slow, and it is not possible to repeatedly raise and lower the temperature in a short time and efficiently.
- an oxide-based glass material or a heat-resistant electrically insulating synthetic resin such as a polyimide-based resin or a silicone-based resin
- a heat-resistant resin such as a polyimide-based resin or a silicone-based resin
- One of these materials may be used alone, or two or more of them may be used in combination (formed as a multilayer). Note that these materials will be described later.
- the base material is not limited to aluminum nitride, of course. Examples thereof include carbide ceramics, oxide ceramics, and nitride ceramics other than aluminum nitride.
- Examples of the above carbide ceramics include metal carbide ceramics such as silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, and tungsten carbide.
- Examples of the above oxide ceramics include alumina, zirconium, and zirconia.
- metal oxide ceramics such as gerite and mullite.
- examples of the above nitride ceramics include aluminum nitride, silicon nitride, and silicon nitride.
- Metal nitride ceramics such as nitrogen and titanium nitride can be used.
- nitride ceramics and carbide ceramics are generally preferred over oxide ceramics because of their higher thermal conductivity.
- These sintered substrates may be used alone or in combination of two or more.
- Ceramic heaters using nitride ceramics such as aluminum nitride or other carbide ceramics have a small thickness because their ceramic materials have a smaller coefficient of thermal expansion than metals and a high rigidity. Even in this case, there is no warping or distortion due to heating, and the heater substrate can be made thinner and lighter than a metal material such as aluminum.
- aluminum nitride has excellent thermal conductivity, is hardly affected by light and heat in a semiconductor manufacturing apparatus, and has excellent corrosion resistance to processing gas and the like, so that it can be suitably used as a heater. You.
- An insulating layer may be formed on the surface of the ceramic substrate made of the nitride ceramic or the carbide ceramic.
- the ceramic substrate itself has high conductivity at room temperature or its resistance decreases in a high temperature region, forming a resistance heating element on the surface of the ceramic substrate as it is will result in leakage current between adjacent resistance heating elements. This may cause a failure to function as a heater.
- an insulating layer is formed on the surface of the ceramic substrate, a resistance heating element is formed on the insulation layer, and an insulating coating is provided on the resistance heating element.
- oxide ceramic is used as the insulating layer.
- oxide ceramic include silica, alumina, mullite, cordierite, and beryllia. These oxide ceramics may be used alone or in combination of two or more.
- Examples of a method for forming an insulating layer made of these materials include a method in which a sol solution obtained by hydrolyzing an alkoxide is used to form a coating layer by spin coating or the like, followed by drying and firing.
- the insulating layer may be formed by CVD or sputtering, or the insulating layer may be formed by applying a glass powder paste and baking at 500 to 100 ° C.
- the resistive heating element 12 is formed by applying a conductive paste containing particles of a metal such as precious metal (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel or the like to the surface of the ceramic substrate and forming a predetermined pattern of the conductive paste layer.
- the resistance heating element 12 may be formed using conductive ceramic particles such as tungsten carbide and molybdenum carbide.
- the resistance value can be set to various values by controlling the shape (line width and thickness). Also, as is well known, the resistance can be increased as the width is reduced and as the thickness is reduced.
- the form of the resistance heating element is a wide, substantially straight line or a curved line, but does not need to be a strictly geometrically straight line or a curved line, and may be a combination of a straight line and a curved line.
- the oxide-based glass material which is the material of the insulating coating, has high electrical insulation properties, has high adhesion strength to ceramic substrates and resistance heating elements, and is chemically stable. A stable interface and a stable interface with the resistance heating element can be formed.
- compositions for example, 2 as a main component ⁇ 11 0 11 0- 8 2
- oxide-based glass materials may have a crystalline portion. The glass transition point of these glass materials is
- the temperature is 400 to 700 ° C, and the coefficient of thermal expansion is 4 to 9 ppm / ° C.
- a paste containing the above-described oxide glass powder is applied to the surface of a ceramic substrate by screen printing or the like, and is dried and fired to perform the insulating process.
- a method of forming a coating can be mentioned. In this case, it is necessary to form a layer made of a resin or the like that is relatively easily decomposed when heated so as not to form an insulating coating on the portion where the external terminal is formed.
- the surface roughness of the insulating layer can be adjusted by changing the drying conditions (drying speed) and the firing conditions (the firing temperature), or by changing the average particle size of the glass powder. it can.
- a rough surface may be formed by performing sandblasting or the like on the surface.
- the heat-resistant resin material which is the material of the insulating coating, also has good electrical insulation, high adhesion strength to ceramic substrates and resistance heating elements, and stable interfaces with ceramic substrates and stable resistance heating elements. Interface can be formed. Further, by using this heat-resistant resin material, an insulating coating can be formed at a relatively low temperature. When forming the insulating coating, it is only necessary to apply it to the surface of the resistance heating element and dry and solidify it, so that it can be easily formed at low cost.
- the heat resistance means that it can be used at a temperature of 150 ° C. or more, and at this time, deterioration of high molecules does not occur.
- the polyimide resin is a polymer compound obtained by reacting a carboxylic acid derivative with diamine, has a heat resistance of 200 or more, and can be used in a wide temperature range.
- the silicone resin has a methyl group or an ethyl group as an alkyl group in the side chain of the polysiloxane, and has excellent heat resistance, rubber elasticity, and good adhesion to a resistance heating element and a ceramic substrate.
- the insulating cover can be formed by drying and solidifying at a relatively low temperature of about 150 to 250 ° C.
- a paste obtained by dissolving the above-mentioned heat-resistant resin material in a solvent or the like is applied or sprayed on the surface of the ceramic substrate and dried to obtain an insulating material.
- Examples of the method include forming a coating.
- the surface roughness of the insulating layer can be adjusted by changing the drying conditions (drying speed) and / or the spraying conditions. Further, after forming the insulating coating, a rough surface may be formed by performing a sand blast treatment or a treatment with a belt sander on the surface.
- an insulating coating 17 is formed on the surface of the resistance heating element 12, and the thickness of the insulating coating 17 is 5 to 50 in the case of oxide glass. / X m, and preferably 10 to 50 m for heat-resistant resin.
- the ceramic heater 10 it is necessary to cool to return to room temperature after heating.1 If the insulating coating 17 is too thick, it takes a long time to cool down, reducing productivity. If the temperature is too high, the oxidation resistance decreases, and the temperature of the heating surface also decreases due to heat radiation from the exposed surface of the resistance heating element.
- these materials have excellent electrical insulation properties, so that even when a current of about 30 to 30 OV is applied to the resistance heating element, the insulation is maintained.
- the leakage current does not flow through the conductive coating, and the surface of the resistance heating element can be protected.
- the above-mentioned ceramic substrate has a high thermal conductivity and can be formed to be thin, the surface temperature of the ceramic substrate quickly follows the temperature change of the resistance heating element.
- the heater 10 has excellent temperature controllability and durability.
- FIG. 3 is a bottom view schematically showing another embodiment of the ceramic heater of the present invention
- FIG. 4 is a partially enlarged sectional view of the ceramic heater.
- this ceramic heater 20 uses a plate-like ceramic substrate 21 and has a substantially linear resistance heating on one main surface of the ceramic substrate 21.
- a circuit is formed by arranging the bodies 22 (22a to 22f) in the concentric shape shown in Fig. 1, and the object to be heated is placed or held on the other main surface and heated. Is configured as .o
- a circuit is formed in a region including a portion where the circuit is formed, that is, the resistance heating elements 22 a, 22 b, and 22 c in which the distance between the circuits is relatively wide.
- Insulating coatings 27a, 27b, and 27c are provided in the area sandwiched by the resistance heating elements and in the area around the resistance heating elements.
- an insulating cover 27d is provided in the area sandwiched by the resistance heating elements constituting the circuit, the periphery thereof, and the entire area between the circuits.
- the same effect as in the case of the ceramic heater 10 shown in FIG. 1 can be obtained, and metal particles (for example, silver particles) contained in the resistance heating element 22 can be obtained. Migration causes a short circuit in adjacent circuits This can be prevented. Also, when the insulating cover 27 is formed, a coating layer may be formed in a certain area by screen printing or the like, and heating or the like may be performed to form the insulating cover 27. The heater can be formed easily and efficiently, the coating cost is reduced, and the heater becomes inexpensive.
- an oxide-based glass material or a heat-resistant resin such as a polyimide-based resin or a silicone-based resin may be used. it can.
- the material of the substrate of the ceramic substrate may be, for example, a carbide ceramic, an oxide ceramic, a nitride ceramic, or the like, as in the case of the ceramic heater shown in FIG.
- the same material as that of the ceramic heater 10 shown in FIG. 1 can be used as the material of the resistance heating element 22.
- the resistance heating element 22 is made of the same material as the ceramic heater 10 shown in FIG. The heating element 22 can be formed.
- the thickness of the insulating covering 27 (the thickness from the surface of the resistance heating element 22) is desirably the same as that of the ceramic heater 10 shown in FIG.
- the thickness from the bottom of the ceramic substrate 21 where the resistance heating element 22 is not formed is 10 to 50 im for oxide glass and 10 to 5 O / for heat-resistant resin. xm is desirable.
- FIG. 5 is a bottom view schematically showing still another embodiment of the ceramic heater of the present invention.
- the ceramic heater 30 has the same structure as that of the ceramic heater 20 except that an insulating coating 37 is formed over the entire area of the ceramic heater 20 where the resistance heating element 2.2 is formed.
- an insulating coating 37 is formed over the entire area of the ceramic heater 20 where the resistance heating element 2.2 is formed.
- the coating layer may be formed by screen printing or the like, and heating or the like may be performed to form the insulating cover 37, so that the formation is easy and efficient. The coating cost is reduced and the heater becomes inexpensive.
- the insulating cover according to the present invention is configured to cover only the surface of the circuit.
- a structure that covers the entire area including the portion where the circuit is formed, a structure that integrally covers two or more circuits that are diametrically adjacent to the ceramic substrate, and a region where the circuit is formed Various configurations such as a configuration that covers the whole can be adopted.
- a resistive heating element having a predetermined pattern is formed on a surface of a ceramic substrate, and then the resistive heating element is irradiated with laser light to form a groove or a notch.
- a method for manufacturing a ceramic heater for adjusting a resistance value of a heating element comprising:
- the resistance heating element When forming a resistance heating element on the surface of the ceramic substrate, the resistance heating element has a surface roughness Ra based on JIS B 0601 of 0.01 ⁇ m or more.
- a band-shaped or annular conductor layer is formed on a predetermined region of a ceramic substrate surface, and then a part of the conductor layer is trimmed by irradiating a laser beam.
- the surface roughness Ra of the conductor layer based on JIS B 0601 is set to not less than 0.1 ⁇ .
- the resistance value of the resistance heating element is adjusted by trimming the resistance heating element formed in a predetermined pattern.
- the conductor layer is irradiated by irradiating a laser beam. The difference is that a resistive heating element pattern is formed by removing a part of the pattern.
- both inventions are common in that a specific area of the ceramic substrate is irradiated with laser light and the irradiated part of the conductor layer (resistance heating element) is removed.
- a rimming device can be used.
- FIG. 11 is a block diagram showing an outline of a laser trimming apparatus used in the second and third methods of manufacturing a ceramic heater according to the present invention.
- the conductor layer 112m is formed in a concentric shape (annular shape) with a predetermined width so as to include the circuit of the resistance heating element to be formed.
- the ceramic substrate 111 on which the resistance heating element of the predetermined pattern is formed is fixed on the stage 110c.
- the stage 110c is provided with a motor and the like (not shown).
- the motor and the like are connected to the control unit 117, and the motor and the like are transmitted by a signal from the control unit 117.
- the stage 110c can be freely moved in the 0 direction (the direction of rotation of the ceramic substrate) and the xy directions.
- a galvanomirror 115 is provided above the stage 110c, and the angle of the galvanomirror 115 can be freely changed in the X direction by a motor 116.
- the laser beam 122 radiated from the laser radiating device 114 arranged also above the stage 110c reflects on the galvanomirror 115 and is reflected by the ceramic plate. It is configured to irradiate 1 1 1.
- the motor 116 and the laser irradiator 114 are connected to the controller 117, and the motor 116 and the laser irradiator 114 are driven by a signal from the controller 117.
- the galvanometer mirror is rotated at a predetermined angle around the X direction.
- the table is rotated in the 0 direction by driving a motor (not shown) provided on the stage 110c with a signal from the control unit 117.
- the irradiation position on the ceramic substrate 11 can be set freely by rotating the galvanomirror about the X direction and rotating the table about the 0 direction. You.
- the table can be moved not only in the 0 direction but also in the XY direction.
- the laser beam 122 is irradiated to an arbitrary position on the ceramic substrate 111. can do.
- a camera 121 is also installed above the stage 110c, so that the position (X, y) of the ceramic substrate 111 can be recognized.
- the camera 121 is connected to the storage unit 118, thereby recognizing the position (x, y) of the conductive layer 112m of the ceramic substrate 111, and the like. Irradiate 2.
- the input unit 120 is connected to the storage unit 118 and has a keyboard or the like (not shown) as a terminal. Is input.
- this laser trimming device is provided with a calculation unit 119, based on data such as the position of the ceramic substrate 111 recognized by the camera 121 and the thickness of the conductor layer and the resistance heating element. Calculations for controlling the irradiation position, irradiation speed, laser light intensity, etc. of the laser beam 122 are performed, and based on the calculation results, the control unit 117 controls the motor 116 and the laser irradiation device. Give instructions to 4 etc. to rotate the galvanomirror 1 15 or the laser beam 122 while moving or rotating the stage 110 c to trim unnecessary portions of the conductor layer 112 m I do.
- this laser trimming device has a resistance measuring unit 123.
- the resistance measuring section 123 has a plurality of tester pins 124, divides the resistance heating element into a plurality of sections, and contacts the tester pins 124 for each section to form the resistance heating element formed. Measure the resistance of the pattern. Based on the measured resistance value, irradiate a laser to the section with the lower resistance value, and force to form a groove (see Fig. 12) almost parallel to the direction in which the current flows through the resistance heating element, and the direction in which the current flows The resistance value is adjusted by forming a notch almost vertically to the resistance heating element with a small variation in resistance value.
- a ceramic substrate is manufactured.
- a formed body made of ceramic powder and resin is manufactured.
- a method of producing the formed body there are a method of producing granules containing a ceramic powder and a resin, then putting the granules into a mold or the like and applying a pressing pressure, and a method of laminating and pressing green sheets. A more appropriate method is selected depending on whether or not another conductive layer such as an electrostatic electrode is formed inside. Thereafter, the formed body is degreased and fired to produce a ceramic substrate.
- a through hole for passing a lifter pin through the ceramic substrate, a bottomed hole for burying a temperature measuring element, and the like are formed.
- a conductive paste layer having the shape shown in FIG. 11 is formed by screen printing or the like over a wide area including the portion serving as a resistance heating element on the ceramic substrate 111, and thereafter, the conductive paste is fired.
- the body layer is 1 1 2 m.
- the conductor layer may be formed using a physical vapor deposition method such as a plating method or a sputtering method.
- a physical vapor deposition method such as a plating method or a sputtering method.
- plating a plating resist is formed, and in the case of sputtering or the like, selective etching is performed to form a conductor layer 112 m in a predetermined region.
- a part of the conductor layer may be formed as a resistance heating element pattern.
- the surface roughness Ra of the conductor layer based on JISB 0601 is 0.01 ⁇ or more, preferably 0.1 to 10 jum.
- the method of forming the conductor layer (resistance heating element) having such a roughened surface will be described in detail later.
- the conductor layer is formed by screen printing, the raw material of the resistance heating element and The surface roughness of the conductor layer can be adjusted by selecting the shape and average particle size of the metal particles.
- the conductor layer is formed by plating, for example, the roughness of the surface can be adjusted by performing plating under conditions that precipitate needle-like crystals. Furthermore, it is also possible to adjust the surface roughness by puff polishing, sandblasting or the like.
- the fixing protrusions 110 b contacting the side surfaces of the ceramic substrate 111 formed on the stage 110 c and the fittings that fit into the through holes for inserting the lifter pins.
- the ceramic substrate 111 is fixed on the stage 110c.
- the data of the resistance heating element pattern is input in advance from the input unit 120 and stored in the storage unit 118. That is, the data of the resistance heating element pattern to be formed by trimming is stored.
- the resistance heating element pattern data is data used for forming a resistance heating element pattern by trimming a conductor layer printed in a planar shape (so-called solid or annular shape).
- the formation position of the conductor layer 112m is stored in the storage part 118.
- An operation is performed by the operation unit 119 based on the data on the position of the conductor layer, and the result is stored in the storage unit 118 as control data.
- a control signal is generated from the control unit 117 based on the calculation result, and while driving the motors 116 and Z of the galvanometer mirror 115 and the motor of the stage 110c, By irradiating a laser beam, unnecessary portions of the conductive layer 112 m having a surface roughness of 0.1 ⁇ or more are trimmed to form a resistance heating element 112.
- the portion to be trimmed such as the conductor layer is trimmed by laser beam irradiation, but the ceramic substrate underneath is trimmed by laser beam irradiation. It is important not to affect. Therefore, it is necessary to select a laser beam that is well absorbed by the metal particles and the like constituting the conductor layer and the like, but hardly absorbed by the ceramic substrate. Examples of such laser types include a YAG laser, a carbon dioxide laser, an excimer (Kr F) Laser, UV (ultraviolet) laser and the like.
- YAG lasers and excimer (Kr F) lasers are the most suitable.
- YAG laser SL432H, SL436G, SL432GT, SL411B manufactured by HONDA can be used.
- the laser 2 it is desirable to use pulsed light kH Z frequencies below, it is more desirable to use pulsed light frequencies below 1 kH z. This is because a large amount of energy can be applied to the resistance heating element in a very short time, and damage to the ceramic substrate can be reduced. In addition, the energy of the first pulse does not increase, and a groove having a set width can be formed. If the pulse frequency of the laser beam exceeds 2 kHz, the energy of the first pulse will be too large, and a groove wider than the setting will be formed. Can not.
- the acceleration speed is desirably 10 OmmZ seconds or less. If it exceeds 100 mm, sec, ⁇ cannot be formed unless the frequency is increased. As described above, since the upper limit of the frequency is 2 kHz or less, the frequency is desirably 10 OmmZ seconds or less.
- the output of the laser is preferably 0.3 W or more. If it is less than 0. 3 W, a sintered body of 9 particular resistance heating element a conductive layer to be removed to form a pattern of the resistance heating element completely is because there is a possibility that can not be trimmed metal particles In this case, by trimming with an output of 0.3 W or more, trimming that reaches the ceramic substrate can be realized, and the conductor layer can be completely removed.
- the trimming may be performed on the conductor paste layer. However, as described above, it is preferable that the resistance heating element paste is printed and then fired to form the conductor layer, and then the trimming is performed. This is because the resistance value may fluctuate due to firing, or the paste may be peeled off due to laser light irradiation.
- the conductor paste is formed in an annular shape (so-called solid shape) and patterned by trimming, a heating element pattern having a uniform thickness can be obtained. it can. If you try to print in a heating element pattern from the beginning, the thickness will vary depending on the printing direction, so resistance heating with a uniform thickness It becomes difficult to form a body.
- a groove 113 is formed substantially parallel to the direction in which the current flows through the resistance heating element 112, thereby adjusting the resistance value of the resistance heating element.
- the resistance may be adjusted by forming a notch substantially perpendicularly to the direction in which the current of the resistance heating element flows, but a method of forming a groove is preferable because there is little risk of disconnection of the heating element.
- the formed resistance heating element is divided into a number of sections using the tester pins 124, and the resistance value is measured, and the resistance value is adjusted by trimming.
- the pattern of the resistance heating element formed by such laser trimming is not particularly limited, and examples thereof include the following resistance heating element patterns.
- the following shows a ceramic heater on which a resistive heating element pattern is formed.
- FIG. 13 is a bottom view schematically showing a ceramic heater manufactured by the second method for manufacturing a ceramic heater of the present invention
- FIG. 14 is a partially enlarged sectional view thereof. The grooves formed by trimming are not shown in the resistance heating elements 112 a to 112 g shown in FIG.
- This ceramic heater 110 is provided with a resistance heating element 111 (b) on the bottom surface 111b opposite to the heating surface 111b of the disk-shaped ceramic substrate 111b. ⁇ 1 12 g) are formed.
- the resistance heating element 112 Since the resistance heating element 112 is heated so that the entire temperature of the heating surface 111a becomes uniform, the resistance heating element 112 is basically composed of arcs and concentric circles repeatedly formed so as to draw a part of concentric circles. It is formed by the pattern which is done.
- the resistance heating elements 1 12 a to l 12 d closest to the outer periphery are formed by repeating arc-shaped patterns obtained by dividing a concentric circle into four parts, and the ends of adjacent arcs are connected by a bending line to form a series. Of the circuit. Then, four circuits composed of the resistive heat generating elements 1 1 2 a to l 1 2 d having such a pattern are closely arranged so as to surround the outer periphery. It is formed and forms an annular pattern as a whole.
- the end of the circuit composed of the resistance heating elements 1 1 2 a to l 1 2 d is formed inside the annular pattern in order to prevent the occurrence of a cooling spot or the like. Is extended toward the inside.
- resistance heating elements 1 1 2 a to l 1 2 d formed on the outer circumference there are resistance heating elements 1 1 e, 1 1 f, 1
- this resistance heating element 1 12 e, 1 12 f, and 1 12 g the ends of adjacent concentric circles are connected by a resistance heating element consisting of a normal line
- a series of circuits is configured.
- a belt-shaped (annular) non-heating element non-forming area is provided for each of the resistance heating elements 112a to 112d, 112e, 112f, and 112g.
- a circular heating element non-forming region is also provided at the center.
- the annular resistance heating element forming area and the heating element non-forming area are alternately formed from the outside to the inside, and these areas are formed by the size (diameter) of the ceramic substrate and the like.
- a metal coating layer 112 is formed to prevent corrosion and the like.
- An external terminal 133 is connected to the end via a solder layer 111.
- the ceramic substrate 1 1 1 1 1 has three through holes 1 3 5 at positions where no heating elements are to be formed, and heats an object such as a silicon wafer 1 3 9 by heating the ceramic substrate 1 1 1.
- a lifter pin 136 is passed through these through holes 1 35, and a silicon wafer is By holding the object to be heated such as 139, the object to be heated can be heated in a state where the object to be heated is separated from the ceramic substrate 111 by a certain distance.
- a heated object such as a silicon wafer 1339 is received from the transfer device, the heated object is placed on the ceramic substrate 111, and the heated object is removed. It is possible to heat while supporting it ing.
- a recess is formed in the heating surface 1 1 1a of the ceramic substrate 1 1 1 and support pins are set in the recess and the like so as to slightly protrude from the heating surface 1.1 1a.
- the silicon wafer 13 39 may be supported at a distance of 5 to 500 / im from the heating surface to perform heating or the like.
- a bottomed hole 1 3 4 is formed in the area of the bottom surface 1 1 1 b of the ceramic substrate 1 1 1 where no heating element is formed, and the bottomed hole 1 3 4 has a temperature measuring element 1 3 such as a thermocouple. 7 is inserted, so that the temperature of a portion near the heating surface 111 a of the ceramic substrate 111 can be measured.
- a pattern (a series of circuits composed of a combination of arcs and bending lines repeatedly formed so as to draw a part of concentric circles) is formed on a disc-shaped ceramic substrate.
- this pattern is also referred to as a circular arc repetition pattern
- a pattern in which concentric circles partially cut are connected linearly at adjacent ends to form a series of circuits (hereinafter, also referred to as concentric patterns). Since the body is configured, most of such a resistance heating element pattern can be represented by the distance r from the center of the ceramic substrate and the rotation angle (0 ⁇ -0 2).
- the resistance of the resistance heating element can be adjusted relatively easily by rotating the ceramic substrate around the center, and the resistance adjusted by such a method can be adjusted.
- the temperature of the heating surface becomes uniform, and an object to be heated such as a semiconductor wafer can be heated at a uniform temperature.
- the ceramic heater having the heating element pattern shown in FIG. 13 can be obtained by trimming the conductor layer of the ceramic heater on which the annular conductor layer is formed, according to the third manufacturing method of the present invention. Can be manufactured. The same applies to a ceramic heater having a resistance heating element having a shape described below.
- the ceramic heater manufactured by the second and third manufacturing methods of the present invention is not limited to the resistance heating element having the pattern shown in FIG. A single pattern or a repeating pattern of bent lines may be formed alone, or these patterns may be arbitrarily combined.
- FIG. 15 shows a ceramic heater manufactured by the second and third manufacturing methods of the present invention.
- 7 is a plan view schematically showing another embodiment of the present invention.
- each of the resistance heating elements 144a, 144b, and 142c each of which is formed in an annular shape, mainly having a bent line, is formed into an annular shape.
- the entire body is radially formed with the heating element non-forming area and the heating element non-forming area in the center part interposed therebetween.
- the resistance heating element formed on the surface of the ceramic substrate be divided into at least two or more circuits as shown in FIGS. This is because, by dividing the circuit, the power supplied to each circuit can be controlled to change the amount of heat generated, and the temperature of the heating surface of the silicon wafer can be adjusted.
- the resistive heating element When forming such a resistive heating element pattern, if the pattern of wiring of the resistive heating element is wide as shown in FIG. 15, the resistive heating element can be easily formed by screen printing. When forming a complicated (crowded) pattern with a narrow interval as shown in Fig. 13, an annular conductor layer consisting of a wide band of lines is formed, and the resistance is adjusted using laser light. The method of trimming a part (unnecessary part) that is not a heating element is advantageous because a resistance heating element can be formed relatively easily.
- the thickness of the resistance heating element is preferably 1 to 30 ⁇ , and more preferably 1 to 10 ⁇ .
- the width of the resistance heating element is preferably 0.1 to 2 Omm, more preferably 0.1 to 5 mm.
- the resistance heating element can have its resistance value varied depending on its width or width, but the above range is the most practical.
- the resistance heating element may have a rectangular or elliptical cross section, but is preferably flat. This is because the flat surface is more likely to dissipate heat toward the heating surface, making it difficult to achieve a temperature distribution on the heating surface.
- the aspect ratio of the cross section (the width of the resistance heating element and the thickness of the resistance heating element) is preferably in the range of 10 to 500.
- the resistance value of the resistance heating element can be increased, and the uniformity of the temperature of the heating surface can be ensured.
- the aspect ratio of the cross section be 10 to 500.
- the variation of the resistance value of the resistance heating element is preferably 5% or less, more preferably 1%.
- the resistance heating element of the present invention is divided into a plurality of circuits, by reducing the variation in resistance value in this way, the number of divisions of the resistance heating element can be reduced and the temperature can be controlled and reduced. . Further, it is possible to make the temperature of the heating surface uniform during the transition of the temperature rise.
- such a resistance heating element is formed by applying a conductive paste containing metal particles or conductive ceramic particles for securing conductivity on a ceramic substrate and firing the conductive paste.
- the conductive paste is not particularly limited, but preferably contains not only the above-mentioned metal particles or conductive ceramic but also a resin, a solvent, a thickener and the like.
- metal particles for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable. These may be used alone or in combination of two or more. This is because these metals are relatively hard to oxidize and have sufficient resistance to generate heat.
- the conductive ceramic examples include carbides of tungsten and molybdenum. These may be used alone or in combination of two or more.
- the particle size of the metal particles or conductive ceramic particles is preferably from 1 to 1 ⁇ m. If the fineness is less than 1 ⁇ , the surface roughness Ra of the resistance heating element tends to be less than 0.01 zm, and the laser light is easily reflected during trimming by irradiation with the laser light. On the other hand, if the size of the metal particles or the like exceeds 100 // m, sintering becomes difficult and the resistance value increases.
- the shape of the metal particles may be spherical or scaly, but more preferably spherical. This is because the surface roughness of the resistance heating element tends to be rougher. Also, the aspect ratio (width or length / thickness) is not so large even if it is a flake shape. If it is, the surface tends to be perpendicular or oblique to the surface on which the resistance heating element is formed, so that the surface roughness can be increased.
- these metal particles When these metal particles are used, they may be a mixture of the above-mentioned spheres and the above-mentioned flakes.
- the metal particles are flakes or a mixture of spheres and flakes
- the metal oxide can be easily held between the metal particles, and the adhesion between the resistance heating element and the nitride ceramic can be improved.
- This is advantageous because the resistance can be increased and the resistance value can be increased.
- the needle-like particles do not have a very large aspect ratio (length with respect to the diameter), they are likely to be perpendicular or oblique to the surface on which the resistance heating element is formed. Can be increased.
- Examples of the resin used for the conductor paste include an epoxy resin and a phenol resin.
- Examples of the solvent include isopropyl alcohol. ⁇
- Examples of the viscosity agent include cellulose.
- the conductor paste it is desirable to use a metal paste obtained by adding a metal oxide to metal particles, apply the metal oxide on a ceramic substrate, and then sinter the metal particles and the metal oxide.
- a metal paste obtained by adding a metal oxide to metal particles apply the metal oxide on a ceramic substrate, and then sinter the metal particles and the metal oxide.
- metal oxides improves the adhesion to nitride ceramics, but the surface of metal particles and surfaces of nitride ceramics are slightly oxidized to form oxide films. It is considered that these oxide films are sintered together via the metal oxide to be integrated, and the metal particles and the nitride ceramics or the like adhere to each other.
- the ceramic constituting the ceramic substrate is an oxide ceramic, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed.
- the metal oxide for example, lead oxide, zinc oxide, silica, boron oxide (B 2 0 3), alumina, at least one selected from the group consisting of yttria and Chitayua preferred.
- the amount of the metal oxide added to the metal particles is preferably from 0.1% by weight to less than 10% by weight.
- the area resistivity when the resistance heating element 12 is formed using the conductor paste having such a configuration is preferably 1 to 45 mQZ.
- the sheet resistivity exceeds the 45 m QZ port, the heat generation becomes too large with respect to the applied voltage, and in the ceramic substrate 11 with the resistance heating element 12 provided on the surface of the ceramic substrate, the heat generation Is difficult to control. If the added amount of the metal oxide is more than 10% by weight, the sheet resistivity exceeds 5 ⁇ , and the calorific value becomes too large to make the temperature control difficult, and the temperature distribution becomes uniform. Is reduced.
- the sheet resistivity can be set to 50 ⁇ ⁇ ] to 10 ⁇ . If the sheet resistance is increased, the width of the pattern can be increased, so that there is no problem of disconnection.
- the resistance heating element When the resistance heating element is formed on the surface of the ceramic metal plate, it is desirable that a metal coating layer is formed on the surface of the resistance heating element. This is to prevent the resistance value from changing due to oxidation of the internal metal sintered body.
- the thickness of the metal coating layer to be formed is preferably 0.1 to 10 jum. Such a metal coating layer is formed after performing the above-described trimming treatment.
- the metal used for forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal, and specific examples thereof include gold, silver, palladium, platinum, and nickel. These may be used alone or in combination of two or more. Of these, nickel is preferred.
- the resistance heating element needs a terminal to connect to the power supply, and this terminal is attached to the resistance heating element via solder, but nickel prevents thermal diffusion of solder. It is.
- Examples of the connection terminal include those made of Kovar.
- the ceramic substrate used in the second and third production methods of the present invention is preferably a disk, and preferably has a diameter exceeding 19 Omm. This is because the larger the diameter, the greater the temperature variation on the heating surface.
- the thickness of the ceramic substrate is desirably 25 mm or less. This is because if the thickness of the above ceramic substrate exceeds 25 mm, the temperature following ability is reduced. More preferably, the thickness is more than 1.5 mm and 5 mm or less.
- the thickness is more than 5 mm, heat is difficult to propagate, and the heating efficiency tends to decrease.On the other hand, if the thickness is less than 1.5 mm, the heat propagating through the ceramic substrate will not be sufficiently diffused, so heating will not occur. This is because temperature variations may occur on the surface and the strength of the ceramic substrate may be reduced to cause breakage.
- ceramic is used as a substrate material.
- the ceramic is not particularly limited.
- nitride ceramic, carbide ceramic and Oxide ceramics and the like can be given.
- a nitride ceramic or a carbide ceramic is preferable as the material of the ceramic substrate 11. This is because it has excellent heat conduction characteristics.
- nitride ceramic examples include aluminum nitride, silicon nitride, boron nitride, and titanium nitride.
- carbide ceramic examples include silicon carbide, titanium carbide, boron carbide, and the like.
- oxide ceramic examples include alumina, cordierite, mullite, silica, beryllia and the like. These may be used alone or in combination of two or more.
- aluminum nitride is most preferred. This is because the thermal conductivity is as high as 18 O WZ m ⁇ K.
- the ceramic substrate 111 is preferably made of a material that does not easily absorb laser light.
- a substrate having a carbon content of 500 ppm or less and a low carbon content is preferable. Is preferred.
- the surface is polished to have a surface roughness of 20 ⁇ or less in JISB 0601 Ra. If the surface roughness is large, the laser light will be absorbed Because.
- a heat-resistant ceramic layer may be provided between the resistance heating element and the ceramic substrate.
- a heat-resistant ceramic layer may be provided between the resistance heating element and the ceramic substrate.
- an oxide ceramic may be formed on the surface.
- the above method is used to form a resistance heating element on the surface of a ceramic substrate by applying a conductor paste in a plane (annular shape) to a predetermined area of the ceramic substrate and then applying laser heating to form a heating element pattern.
- a method of forming a resistive heating element having a predetermined pattern by performing laser trimming after baking a conductive paste is preferable because peeling of the conductor paste layer due to laser beam irradiation does not occur.
- a conductor layer may be formed in a predetermined region by using a plating method, a sputtering method, or the like, and a resistance heating element pattern may be formed by laser trimming.
- FIGS. 16A to 16D are cross-sectional views schematically showing a part of the second and third methods of manufacturing a ceramic heater according to the present invention including laser processing.
- a ceramic powder such as aluminum nitride, optionally, yttria (Y 2 0 3) sintering aid such as, N a, compounds containing C a, after preparing a slurry by blending Painda like, this
- the slurry is formed into granules by a method such as spray drying, and the granules are placed in a mold or the like and pressed to be formed into a plate shape or the like, thereby producing a green body.
- the green body may be produced by laminating green sheets formed by a doctor blade method or the like.
- a portion having a bottomed hole for embedding any temperature measuring element is formed.
- the formed body is heated, fired and sintered to produce a ceramic plate.
- the ceramic substrate 11 is manufactured by processing it into a predetermined shape (see FIG. 16 (a)). 1
- the shape may be such that it can be used as it is after firing. Further, for example, by performing heating and baking while applying pressure from above and below, it becomes possible to manufacture the ceramic substrate 111 without pores.
- the heating and sintering may be performed at a temperature equal to or higher than the sintering temperature.
- a through hole 135 and a bottomed hole (not shown) for inserting a temperature measuring element are provided.
- the through holes 135 and the like can be formed by performing a blast treatment such as sandblasting using SiC particles or the like after surface polishing.
- the conductor paste is generally a high-viscosity fluid composed of metal particles, a resin, and a solvent.
- the viscosity of the conductor paste is preferably 70 to 90 Pas. If the viscosity of the conductor paste is less than 70 Pas, the viscosity is too low, so that a paste containing a uniform concentration of metal or the like cannot be prepared, and a conductor layer having a uniform thickness is formed. On the other hand, if it exceeds 90 Pa ⁇ s, the viscosity of the conductor paste is too high, so that the coating operation becomes difficult, and it is impossible to form a conductor layer having a uniform thickness.
- the conductor paste preferably has a higher viscosity. This is because scaly or needle-shaped metal tends to be perpendicular or oblique to the surface on which the resistance heating element is formed.
- the conductor paste layer 112m is formed by printing this conductor in a band or ring shape integrally with the area where the resistance heating element is to be provided by screen printing or the like (Fig. 16 (b)). ).
- the pattern of the resistance heating element is based on a circular arc or concentric circle that is repeatedly formed to draw a part of a concentric circle as shown in Fig. 13. Is desirable.
- the conductor layer can be formed by plating.
- the resistance heating element having a rough surface can be formed by depositing the plating so as to form a needle-shaped plating layer.
- a roughened surface may be formed by performing etching or the like.
- the conductor paste layer printed on the bottom surface of the ceramic substrate 111 is heated and baked to remove the resin and the solvent, and the metal particles are sintered.
- the above-mentioned laser trimming is performed to form a resistance heating element (see Fig. 16 (c)).
- the roughness of the conductor layer surface can be adjusted by changing the heating and firing conditions.
- the heating and firing temperature is usually 500 to 100 O. However, by firing at a relatively low temperature, it is possible to prevent the metal and the like from melting and flattening.
- the roughness Ra can be set to 0.01 ⁇ or more. However, if the temperature is too low, sintering of the metals does not proceed, and the resistance value of the resistance heating element becomes too high.
- the metal coating layer 112 can be formed by electrolytic plating, electroless plating, sputtering, or the like, but in consideration of mass productivity, electroless plating is optimal.
- the ceramic heaters manufactured by the second and third manufacturing methods of the present invention can be used as an electrostatic chuck by providing an electrostatic electrode inside a ceramic substrate. By providing a top conductor layer and providing a guard electrode and ground electrode inside, it can be used as a wafer prober. Next, the fourth ceramic heater of the present invention will be described.
- a ceramic heater according to a fourth aspect of the present invention is a ceramic heater in which a resistance heating element is formed on a surface of a ceramic substrate, wherein a groove or a notch is formed in a part of the resistance heating element.
- the groove or notch formed in a part of the resistance heating element may be, for example, the same as the groove or notch described in the method for manufacturing a ceramic heater according to the second aspect of the present invention. And the like.
- the surface roughness Ra of the surface of the resistance heating element based on JISB 061 is not less than 0.01 im, and the desirable range is as described above. It is on the street.
- the resistance heating element is coated with an insulating layer, and the insulating layer includes an insulating coating of the ceramic heater according to the first aspect of the present invention.
- the granulated powder is put into a molding die and molded into a flat plate to form a green compact.
- the resulting compact is subjected to a pressure of about 180 ° C. and a pressure of 200 kg Zcm 2 Hot-breathing was performed under the following conditions to obtain a 3 mm-thick plate-like sintered body made of aluminum nitride. This is cut out into a disk shape with a diameter of 21 O mm and a ceramic base for a ceramic heater is cut out. Plate 11 was used (see Fig. 1).
- thermocouple a part to be a through hole 15 for inserting a lifter pin 16 for a semiconductor wafer and a bottomed hole 14 for embedding a thermocouple was drilled in the ceramic substrate 11 by drilling.
- a conductor paste was printed on the processed ceramic substrate 11 by, for example, a screen printing method so as to form the linear resistance heating element 12 in the pattern shown in FIG.
- the conductor paste used here is Solvent PS 603D (trade name) manufactured by Tokuka Chemical Laboratory, and is a metal oxide composed of a mixture of lead oxide, zinc oxide, silica, boron oxide, and alumina (weight ratio: In this order, it is a so-called silver paste containing 7.5% by weight of 5Z55Z10 / 25/10) based on the amount of silver.
- the average particle size of silver was 4.5 ⁇ , and the shape was mainly scaly.
- the ceramic substrate 11 on which the conductive paste was printed was heated and fired at 780 ° C. to sinter the silver in the conductive paste and baked on the ceramic substrate 11.
- the resistance heating element 12 formed of the silver sintered body had a thickness of about ⁇ ⁇ m, a width of about 2.4 mm, and a sheet resistance of 5 m ⁇ Z.
- an insulating coating 17 made of an oxide-based glass material was formed on the surface of the resistance heating element 12.
- a paste-like mixture was prepared by adding 3 parts by weight of a vehicle and 10 parts by weight of a solvent to 87 parts by weight of glass powder having a composition of / 0 .
- the molded body when heating and fusing, the molded body is preliminarily formed into a shape conforming to the shape of the insulating cover 17, and the temporarily formed body is placed on the resistance heating element 12 and heated. You can do it.
- a silver-containing lead solder paste (manufactured by Tanaka Kikinzoku Kogyo Co., Ltd.) is printed by screen printing on the portion where the external terminals 13 of the resistance heating element 12 are to be attached, to form a solder layer.
- An external terminal 13 made of Kovar was placed on the layer, heated and reflowed at 420 °, and the external terminal 13 was connected to both ends of the resistance heating element 12 and fixed.
- the resistance heating element 12 and the external terminal 13 are connected first, and thereafter, the portion of the resistance heating element 12 on which the external terminal 13 is formed is also covered.
- An insulating coating 17 may be formed on the substrate.
- thermocouple (not shown) for temperature control is embedded in the bottomed hole 14 of the ceramic substrate to obtain the ceramic heater 10 shown in FIGS. 1 and 2, and a ceramic heater is fitted on the upper portion.
- the ceramic heater 10 was fitted into a supporting container provided with a heat insulating ring made of fluororesin described above to form a hot plate unit.
- the resistance heating element 12 Since the resistance heating element 12 has a predetermined resistance value, when energization is performed, heat is generated by Joule heat to heat the semiconductor wafer 19.
- the coefficient of thermal expansion of the insulative coating was measured and evaluated using the following method.
- the surface roughness Ra and Rmax were measured using Surfcom 92 OA manufactured by Tokyo Seimitsu Co., Ltd.
- heating time After placing the silicon wafer on the hot plate unit, energization was performed, and the time required for heating the silicon wafer to 200 ° C (heating time) was measured 10 times. The percentage of the fastest or slowest heating was calculated in%, and the one with the larger absolute value subtracted from 100% was taken as the variation in heating.
- Atsushi Nobori was carried out under the conditions of the above (4), 25 ° C for refrigerant (cooling air) is supplied at 0. 1 m 3 minutes, measure the time (cooling time) until it is cooled to 50 ° C The average value was taken as the cooling time.
- the hot plate unit is heated to 2003 ⁇ 4 at 100% humidity and energized for 48 hours, and the presence or absence of metal diffusion between the resistive heating elements is measured with a fluorescent X-ray analyzer (EPM-810S manufactured by Shimadzu Corporation). It was done by doing.
- a heat-resistant resin material (polyimide resin) was used in place of the oxide-based glass material, the insulating coating 17 was formed by the following method, and roughening was performed. To produce a ceramic heater, and evaluated in the same manner as in Example 1. Table 1 shows the results.
- a solution of a paste-like or viscous mixture consisting of 80% by weight of aromatic polyimide powder and 20% by weight of polyamic acid is prepared, and the solution of this mixture is coated so as to cover the surface of the resistance heating element 12.
- the formed layer of the mixture was heated at 350 ° C. in a continuous firing furnace to be dried and solidified, and fused to the surface of the resistance heating element 12 and the ceramic substrate 11.
- the surface of the insulating coating was subjected to sandblasting using an alumina powder having an average particle size of 1.0 m to adjust the surface roughness Ra of the insulating coating 17.
- the average thickness of the formed insulating cover 17 was 10 ⁇ .
- a heat-resistant resin material (silicone-based resin) was used instead of the oxide-based glass material, the insulating coating 17 was formed by the following method, and roughening was performed.
- a heater was manufactured and evaluated in the same manner as in Example 1. Table 1 shows the results.
- a methylphenol-based silicone resin is selectively applied to cover the surface of the resistance heating element 12 by a metal mask printing method or the like, and is heated and dried and solidified at 220 ° C. in an oven. It was fused to the two surfaces and the ceramic substrate 11. At this time, the thickness of the formed insulating cover 17 was 15 / xm. The surface roughness Ra of the insulating cover 17 was adjusted by sand blasting using alumina powder having an average particle size of 1.5 ⁇ m.
- a ceramic heater was manufactured in the same manner as in Example 1, except that the resistance value of the linear resistance heating element was increased and the thickness of the insulating coating made of oxide glass was set to 20 ⁇ . Then, evaluation was performed in the same manner as in Example 1. Table 1 shows the results.
- the surface roughness Ra of the insulating coating 17 was adjusted by sandblasting using SiC powder having an average particle size of 0.1 ⁇ .
- silver 56.5% by weight
- of palladium 10.3 wt%
- S i 0 2 1. 1 % by weight
- B z O 3 2, 5 wt%
- Z ⁇ 5 . 6 wt%
- P b O 0. 6 wt%
- RuO 2 2. 1 wt%
- the resin binder 3.4 wt 0 I solvent: was used consisting of 17.9 wt%.
- the resistance heating element pattern has a thickness of 10 ⁇ , a width of 2.4mm, and a sheet resistance of 150mQ. It was erotic.
- a heat-resistant resin material (polyimide resin) was used in place of the oxidizing glass material, an insulating coating 17 was formed by the method described in Example 2, and roughening was performed.
- a ceramic heater was manufactured in the same manner as in Example 4, and evaluated in the same manner as in Example 4.
- the thickness of the insulating coating is set to 1 ⁇ / ⁇ , and the surface roughness Ra of the insulating coating 17 is adjusted by sandblasting using alumina powder with an average particle size of 0.1 ⁇ . Was performed. Table 1 shows the results.
- a heat-resistant resin material (silicone resin) was used in place of the oxidizing glass material, an insulating coating 17 was formed by the method described in Example 3, and roughening treatment was performed.
- a ceramic heater was manufactured in the same manner as in Example 4, and evaluated in the same manner as in Example 4.
- the thickness of the insulating coating was set to ⁇ ⁇ , and the surface roughness Ra of the insulating coating 17 was adjusted by sand-plasting using alumina powder with an average particle size of 0.03 / zm. Was performed. Table 1 shows the results.
- Example 1 except that the ceramic substrate on which the resistance heating element was formed was immersed in an electroless nickel plating bath, and a nickel metal layer with a thickness of about 1 / xm was deposited on the surface of the resistance heating element.
- a ceramic heater was manufactured in the same manner as in Example 1 and evaluated in the same manner as in Example 1. Table 1 shows the results.
- the concentration of each component in the nickel plating bath was 80 g / l of nickel sulfate, 24 g of sodium hypophosphite / 12 gZl of sodium acetate, 8 gZl of boric acid, and 6/1 of ammonium chloride.
- a ceramic heater was manufactured and evaluated in the same manner as in Example 1, except that after forming an insulating coating on the surface of the resistance heating element 12, a roughening treatment by sandblasting was not performed, a ceramic heater was manufactured in the same manner as in Example 1. .
- the surface roughness Ra of the ceramic heater was 0.007 ⁇ . Table 1 shows the results.
- Example 3 After forming an insulating coating on the surface of the resistance heating element 12, sandblasting is performed using 31 C powder with an average particle size of 15111 to obtain an insulating coating with a surface roughness Ra of 1.
- a ceramic heater was manufactured in the same manner as in Example 4 except that a body was formed, and evaluated in the same manner as in Example 1. Table 1 shows the results.
- a ceramic heater was manufactured in the same manner as in Example 1 except that the insulating coating was not formed on the surface of the resistance heating element 12, and evaluated in the same manner as in Example 1. Table 1 shows the results.
- the migration of Ag occurred in the ceramic heater according to Comparative Example 4, and a short circuit could occur between the resistance heating elements.
- the thermal expansion coefficient of the oxide glass as the insulating coating was 5 ppm / ⁇ C
- the aluminum nitride was 3.5 to 4 pp mZ ° C, which was Numerically close, the change in resistance caused by the separation of the metal particles composing the resistance heating element due to expansion and contraction due to cooling and heating cycles is relatively smaller than when heat-resistant resin is used.
- Examples 4 to 6 those having a sheet resistance of 15 1 ⁇ were used as the resistance heating elements.
- the insulated coating has a sheet resistance of approximately 10 15 to 10 1 ⁇ ⁇ and is almost completely an insulator, even if a voltage of 50 to 200 V is applied, the current will be a resistance heating element.
- the nickel plating film as in Comparative Example 1 is formed, the sheet resistance of the nickel plating film is smaller than that of the ⁇ ⁇ ⁇ port and the resistance heating element, and the electric current increases. Since the electric current propagates through the lower resistance part, the current propagates through the nickel plating film, and the calorific value is reduced.
- a ceramic substrate 21 for a ceramic heater is manufactured, a through hole 25 for inserting a lifter pin 16 for a semiconductor wafer, and a bottomed hole for embedding a thermocouple.
- the portion to be the hole 24 was drilled.
- resistance heating elements 22 a to 22 f having the shapes shown in FIG. 3 were formed using the same material as in Example 1.
- the oxide-based glass is formed in the area between the resistance heating elements constituting the circuit and the surrounding area.
- 2a, 2b, and 27c are provided, and the resistance heating elements 22d, 22e, and 22f are areas sandwiched between the resistance heating elements that constitute the circuit.
- An insulating coating 27 d made of the same material was provided over the entire area around the substrate and between the circuits.
- the composition of the oxide-based glass material is the same as that of Example 1, and the method of forming the insulating coating 27 is the same as that of Example 1 except that the applied area is wide as described above. Is the same as At this time, the thickness of the insulating cover 17 was 30 / m. However, the insulating cover 27 was not formed at the part connecting the external terminals at both ends of the circuit.
- the surface roughness Ra of the insulating cover 27 was adjusted by sand blasting using SiC powder having an average particle diameter of 5 ⁇ .
- thermocouple (not shown) for temperature control was embedded in the bottomed hole 24 of the ceramic substrate to obtain a ceramic heater 20 shown in FIGS.
- a heat-resistant resin material (polyimide resin) was used in place of the oxide-based glass material, an insulating coating 27 was formed by the following method, and roughening was performed.
- a ceramic heater was manufactured and evaluated in the same manner as in Example 7. Table 2 shows the results.
- a solution of a paste-like or viscous mixture composed of 80% by weight of an aromatic polyimide powder and 20% by weight of a polyamic acid was prepared, and the solution of this mixture was prepared in the same manner as in Example 7. It was applied to the same area and heated and dried and solidified at 350 ° C. in a continuous firing furnace to form insulating coatings 27 a to 27 d.
- the thickness of the insulating coating 27 is 30 ⁇ m, and the surface roughness Ra of the insulating coating 27 is adjusted by using an alumina powder having an average particle size of 4.2 / xm. It was performed by the used sandblasting treatment.
- Example 9 A heat-resistant resin material (silicone resin) was used in place of the oxide-based glass material, an insulating coating 27 was formed by the following method, and roughening was performed. A ceramic heater was manufactured and evaluated in the same manner as in Example 7. Table 2 shows the results.
- a methylphenyl-based silicone resin was applied to the same region as in Example 7 by a metal mask printing method or the like, and was heated at 220 ° C. during opening to dry and solidify. 7a to 27d were formed.
- the thickness of the insulating coating 27 is 30 // m, and the surface roughness Ra of the insulating coating 27 is adjusted by using alumina powder having an average particle size of 2.0 / xm. It was performed by the used sandplast treatment.
- the sheet resistance of the insulating covering was as large as 10 15 to 10 16 ⁇ square, and The resistance change of the coated resistance heating element was as small as 0.2 to 0.3%. The variation in temperature rise was small, and the rate of temperature decrease was relatively fast.
- the granulated powder is placed in a mold and formed into a flat plate to form a formed body.
- the formed body is hot-pressed at 1890 ° C. and a pressure of 2 OMPa, and the thickness is substantially reduced.
- a disk having a diameter of 21 Omm was cut out from the plate-like sintered body to obtain a ceramic substrate.
- an insulating coating having a thickness of 50 // m (the oxide glass) resistance A ceramic heater was formed in the same manner as in Example 1 except that a roughened surface was formed by forming the entire surface of the area where the heating element was formed and performing a sand-plasting process using SiC powder having an average particle size of 1 ⁇ . Was manufactured.
- a heat-resistant resin material (polyimide resin) was used instead of the oxide glass material.
- a ceramic heater was used in the same manner as in Example 10 except that an insulating coating 37 was formed by the following method, and roughening was performed by sandblasting using alumina powder having an average particle size of 10 ⁇ m. It was manufactured and evaluated in the same manner as in Example 10. Table 3 shows the results.
- a solution of a paste-like or viscous mixture composed of 80% by weight of an aromatic polyimide powder and 20% by weight of a polyamic acid is prepared, and the solution of this mixture is formed into a resistance heating element.
- the entire area was coated to form a layer of the mixture.
- the formed layer of the mixture was heated at 350 ° C. in a continuous firing furnace to be dried and solidified, fused to the surface of the resistance heating element and the ceramic substrate, and subjected to a roughening treatment under the above conditions.
- the thickness of the formed insulating coating was 50 ⁇ .
- a ceramic heater was manufactured in the same manner as in Example 10, except that the insulating coating (oxide glass) was subjected to a roughening treatment using a sand plate using SiC powder having an average particle size of 8 / xm. Then, evaluation was made in the same manner as in Example 10. Table 3 shows the results.
- a heat-resistant resin material (polyimide resin) was used in place of the oxide-based glass material, and an insulating cover 37 was formed in the same manner as in Example 11;
- a ceramic heater was manufactured in the same manner as in Example 10 except that roughening treatment was performed with sandplast using alumina powder having a particle size of 8; / m, and evaluation was performed in the same manner as in Example 10. Table 3 shows the results.
- the resistance change of the resistance heating element was as small as 0.2 to 0.3%.
- the variation in the heating rate was slightly larger than in Examples 1 to 7 due to the large surface roughness of the insulating coating, but the cooling rate did not change much. It was quick.
- the ceramic heater according to the first aspect of the present invention has a small rate of change in resistance, a small variation in heating rate, a fast cooling rate, and excellent temperature controllability. It also has excellent corrosion resistance to reactive gases such as O 2 and H 2 S in semiconductor manufacturing equipment. Furthermore, since the insulating coating is an insulating material, even if the resistance value of the resistance heating element is increased, current does not flow through the insulating coating and a heater having a working area of 150 ° C or more is required. Obtainable.
- oxide glass When oxide glass is used as the insulating coating, cracks are less likely to occur due to excellent adhesion between the oxide glass and the ceramic substrate and a small coefficient of thermal expansion. The rate of change is also small.
- the insulating covering can be formed at a relatively low temperature.
- the ceramic heater according to the first aspect of the present invention is most suitable as a heater for a medium temperature of 200 to 400 ° C. and a high temperature of 400 to 800 ° C.
- the formed body was hot-pressed at 180 ° C. and a pressure of 2 OMPa to obtain an aluminum nitride plate having a thickness of about 3 mm.
- a disk having a diameter of 21 Omm was cut out from the plate to obtain a ceramic plate (ceramic substrate 111).
- This ceramic substrate is drilled, through-hole 1 3 5 to insert a lifter pin 1 3 6 of silicon wafer, bottomed hole 1 3 4 for embedding thermocouple (diameter: 1.1 mm, depth: 2 mm).
- a conductor paste layer was formed on the ceramic substrate 111 obtained in (3) by screen printing. The print pattern was as shown in FIG.
- As the conductor paste A g: 48 weight 0 / o, P t: 21 Weight 0/0, S i 0 2: 1 0% by weight, 8 2 0 3: 1.2 wt%, ZnO: 4. 1% by weight, PbO: 3.4% by weight, ethyl acetate: 3.4% by weight 0 /.
- Butyl carbitol A composition having a composition of 17.9% by weight was used.
- This conductive paste was an Ag—Pt paste, and the silver particles (Ag-540 manufactured by Shoei Chemical Co., Ltd.) were scaly with an average particle size of 4.5 ⁇ .
- the Pt particles (Pd-221 manufactured by Shoei Chemical Co., Ltd.) were spherical with an average particle size of 6.8 / zm.
- the viscosity of the conductor paste at this time was 80 Pas.
- the ceramic substrate 111 is heated and fired at 850 ° C for 10 to 20 minutes to sinter Ag and Pt in the conductor paste. And baked on a ceramic substrate.
- the pattern of the resistance heating element is 7 channels of 112 a to 112 g.
- the variation of the resistance values in the four outer channels (resistance heating elements 1 12a to 1 12d) before trimming was 7.4 to 12.4%.
- each channel includes a resistance heating element (112 a to 112) formed as a continuous body. g).
- the resistance variation in each channel was obtained as follows. That is, first, the inside of the channel is divided into 20, the resistance is measured at both ends within the divided range, the average is taken as the average divided resistance value, and the difference between the highest resistance value and the lowest resistance value in the channel is calculated. The average split resistance value and the force were calculated.
- the resistance value in each channel (the resistance heating elements 112a to 112d) is the sum of the total resistance values measured by dividing.
- a trimming device use a YAG laser with a wavelength of 1060 nm (NEC S143AL output 5 W, pulse frequency setting range 0.1 to 40 kHz), and set the pulse frequency to 1.0. kHz.
- This device is X-Y It has a stage, a galvanometer mirror, a CCD camera, and a Nd: YAG laser, and has a built-in controller that controls the stage and the galvanometer mirror.
- the controller is connected to a computer (NEC FC-9821).
- the computer has a CPU that serves both as an arithmetic unit and a storage unit. It also has a hard disk that doubles as a storage unit and an input unit, and a 3.5-inch FD drive.
- the resistance heating element was 5 / xm thick and 2.4 mm wide.
- the laser had a power of 0.4 W at a frequency of 1 kHz, a byte size of 10 / xm, and a processing speed of 1 OmmZ second.
- the variation in the resistance value of the four peripheral channels is 1.0 to 5.0. %.
- Ni plating is applied to the part where the external terminals 133 to secure the connection to the power supply are to be attached, and then silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) is printed by screen printing, and the solder layer is Was formed.
- silver-lead solder paste manufactured by Tanaka Kikinzoku Co., Ltd.
- an external terminal 133 made of Kovar was placed on the solder layer, and the heat was reflowed by heating at 42.
- the external terminal 133 was attached to the surface of the resistance heating element 112.
- thermocouple for temperature control was sealed with polyimide to obtain a ceramic heater 110.
- this formed body was hot-pressed at 1800 and at a pressure of 2 OMPa to obtain an aluminum nitride plate having a thickness of about 3 mm.
- a disk having a diameter of 21 Omm was cut out from this plate to obtain a ceramic plate (ceramic substrate 111).
- This ceramic substrate is drilled to form a through-hole 135 for inserting a lifter pin 136 of a silicon wafer and a bottomed hole (not shown) for embedding a thermocouple (diameter: 1. lmm, depth: 2 mm) (See Fig. 16 (a)).
- a conductor paste layer 112 m was formed by screen printing.
- the printing pattern is a concentric (annular) pattern having a predetermined width and applied in a plane so as to include the resistance heating elements 112a to 112g, which are the respective circuits of the resistance heating element 112 in FIG. (See Fig. 16 (b)).
- the above-mentioned conductor paste is a silver paste. Based on 100 parts by weight of silver, lead oxide: 5% by weight, zinc oxide: 55% by weight, silica: 10% by weight, boron oxide: 25% by weight and alumina : A material containing 7.5 parts by weight of a metal oxide consisting of 5% by weight was used.
- the silver particles (Ag-540 manufactured by Shoei Chemical Co., Ltd.) were scaly with an average particle size of 4.5 ⁇ m.
- the viscosity of the conductor paste was 80 Pa ⁇ s.
- the ceramic substrate 111 is heated and fired at 780 ° C for 20 minutes to sinter the silver in the conductor paste and to form the ceramic substrate. 1 1 1 baked.
- This device is equipped with XY stage, galvanometer mirror, CCD camera, Nd: YAG laser, and built-in controller to control stage and galvanometer mirror are doing.
- This controller is connected to a computer (FC-9821 manufactured by NEC Corporation).
- the computer has a CPU that also serves as an arithmetic unit and a storage unit, and also has a hard disk that also serves as a storage unit and an input unit, and a 3.5-inch FD drive.
- the XY stage can be rotated by an arbitrary angle 0 about the center axis A of the fixed ceramic substrate.
- the heating element pattern data from the FD drive to this computer, and read the position of the conductor layer (reading is based on a specific part of the conductor layer or a marker formed on the ceramic substrate) and perform the necessary control.
- the data is calculated, and a portion of the conductive paste layer other than the area where the heating element pattern is to be formed is irradiated with laser light while rotating the ceramic substrate 111, and the conductive paste layer in that portion is removed.
- a resistive heating element 112 having a pattern was formed (see Fig. 16 (c)).
- the silver-lead resistance heating element has a thickness of 5 / m, a width of 2.4mm, and a sheet resistivity of 7.7 ⁇ / port.
- a silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing on the portion where the external terminals 133 for securing the connection to the power supply were to be formed, to form a solder layer.
- an external terminal 133 made of Kovar was placed on the solder layer, heated and reflowed with 420, and the external terminal 133 was attached to the surface of the resistance heating element 112 (see FIG. 16 (d)).
- thermocouple for temperature control was sealed with polyimide to obtain a ceramic heater 110.
- step (5) of Example 14 the Ag—Pt After baking bets, A] 2 0 3 (average particle diameter: 1 0 / zm) subjected to sandblasting bets treatment with, except that to roughen the surface, in the same manner as in Example 1 4, the ceramic heater Manufactured.
- Example 1 laser trimming resistive heating element
- Example 1 4 steps of the resistance value of (5), after burning the Ag- P t pace bets coated on a ceramic substrate, A 1 2 0 3 A ceramic heater was manufactured in the same manner as in Example 14 except that the surface was roughened by performing a sandblast treatment using (average particle size: 20 / xm).
- Glass borosilicate A glass paste consisting of 50 parts by weight, 20 parts by weight of ethyl alcohol, and 5 parts by weight of polyethylene glycol is applied, and then baked at 1500 ° C for 2 hours to form a 10 ⁇ thick surface.
- a ceramic heater made of silicon carbide was manufactured in the same manner as in Example 14 except that a SiO 2 layer was formed and that a / remina (average particle size: 0.01 ⁇ m) was used. did.
- a ceramic heater was manufactured in the same manner as in Example 14, except that the conductive paste having the following composition was used and heated and fired to form a resistance heating element.
- This conductor paste was an Ag-Pt paste, the composition of which was the same as in Example 14, and the silver particles (Ag-128 manufactured by Shoei Chemical Co., Ltd.) were spherical with an average particle size of 0.6 m. It was.
- the Pt particles (Pd-215, manufactured by Shoei Chemical Co., Ltd.) were spherical with an average particle diameter of 0.6 ⁇ .
- the viscosity of the conductor paste was 80 Pa ⁇ s.
- the ceramic substrate 111 is heated and fired at 850 for 20 minutes to sinter Ag and Pt in the conductor paste, and the ceramic substrate 1 1 baked on 1.
- a ceramic heater was manufactured in the same manner as in Example 15 except that a conductive paste having the following composition was used and heated and fired to form a resistance heating element.
- the conductor paste was a good paste, and the composition was the same as in Example 15.
- the silver particles (Ag-128, manufactured by Shoei Chemical Co., Ltd.) were spherical with an average particle size of 0.6 ⁇ .
- the viscosity of the conductor paste was 80 Pa ⁇ s.
- the ceramic substrate 111 was heated and fired at 780 for 20 minutes to sinter silver and lead in the conductor paste and baked on the ceramic substrate 111. .
- the surface roughness Ra of the surface of the resistance heating element (conductor layer) on the ceramic substrate formed in the above Examples and Comparative Examples was measured using a surface roughness measuring device (Surfcom manufactured by Tokyo Seimitsu Co., Ltd.) by a method according to JISB0601. 92 OA).
- Table 1 shows the surface roughness Ra obtained from the measurement results. Also, charts showing the measurement results of Example 14 and Example 15 are shown in FIGS. 17 and 18, respectively.
- Example 14 In Examples 14, 16, 17 and Comparative Example 5, a resistance heating element was formed on a ceramic substrate, a groove was formed on the surface of the resistance heating element, and the width and depth of the groove were measured.
- Example 15 and Comparative Example 6 after forming a conductor layer on a ceramic substrate, a groove was formed in a portion of the conductor layer to be removed, and the width and ledge of the groove were measured. The width and depth of the groove were measured using a laser displacement meter manufactured by Keyence Corporation. Table 4 shows the results.
- the temperature of the heating surface of the ceramic substrate was thermopure (IR—162 0 1 2 -00 12 by Nippon Datum). And the temperature difference between the minimum temperature and the maximum temperature was determined. The results are shown in Table 4.
- the temperature difference in Table 4 is the difference between the minimum and maximum temperatures.
- Example 14 0.8 50 (0.5) c nS 0.5 Example 15 0.3 50 (0.5) 0.5 Example 16 9.8 50 (0.1) 5 (0.01) 0.5 Example ⁇ 15 50 (0.1) 5 (0.02) 0.6 Example 18 0.01 50 (0.5) 5 (0.05) 0.6 Example 19 18 5 (0.1) 1.5 Comparative example 5 0.007 5 o0 (5.0) 5 (2.0) 5.0 Comparative example 6 0.005 50 (4.o 8) 5 (1.9) 4.8 Table 4 As is clear from the results shown in FIG. 14, in the ceramic heater according to Example 14-19, the resistance heating element having a surface roughness Ra of 0.01 ⁇ or more was irradiated with laser light, and trimming was performed. Grooves are formed. The formed grooves have a width of 50 / xm and a depth of 5. as set. Therefore, the resistance value of the resistance heating element can be precisely adjusted, and the temperature difference between the maximum temperature and the minimum temperature of the heating surface of the ceramic substrate is small.
- Example 15 the resistance heating element is formed by trimming. However, since the conductor layer having a surface roughness Ra force of 0.01 ⁇ or more is irradiated with laser light and trimmed, an accurate pattern is obtained. Are formed, and the temperature difference between the maximum temperature and the minimum temperature of the heating surface is small.
- the ceramic heater according to the example 19 had the largest temperature difference between the highest temperature and the lowest temperature of the heating surface. This is probably because the surface roughness was too large, so that the resistance value of the resistance heating element had a large variation and the temperature difference was large.
- the ceramic heater obtained in the example irradiates the laser beam to the resistance heating element or the conductor layer having the surface roughness Ra of not less than 0.01 ⁇ m and performs trimming. Due to the reflection of light, the trimming of the resistance heating element or the conductor layer did not become incomplete, a precise pattern could be easily formed, and a groove having an accurate width could be formed. Possibility of industrial use
- the ceramic heater according to the first aspect of the present invention has a small resistance change rate of the resistance heating element, has a sufficient rate of temperature rise and fall, and is excellent in temperature controllability. In addition, it has excellent corrosion resistance to reactive gases in semiconductor manufacturing equipment, and since the insulating coating is an insulator, the resistance value of the resistance heating element can be increased. Can be used as
- a laser beam is irradiated on a resistance heating element having a surface roughness Ra based on JISB 0601 of not less than 0.01 / xm, Since the resistance value of the resistance heating element is adjusted by trimming, reflection of laser light can be prevented, and the resistance heating element can be trimmed as set. Thereby, the resistance value of the resistance heating element can be precisely adjusted.
- the conductor layer having a surface roughness Ra of 0.01 / zm or more based on JISB 0601 is irradiated with laser light, Since the resistance heating element having a predetermined pattern is formed by performing the trimming, the reflection of the laser beam can be prevented, and the unnecessary portion of the conductive layer can be trimmed as set. As a result, a ceramic heater having a precise pattern and having excellent temperature uniformity on the heating surface can be obtained.
- the ceramic heater of the fourth aspect of the present invention since the surface roughness of the surface of the resistance heating element is large, the atmospheric gas can be retained, and the flow of air in the grooves and cutouts of the resistance heating element can be reduced. Thus, the generation of a low-temperature portion due to the notch or the groove can be suppressed. Therefore, the temperature uniformity of the heating surface can be further improved.
Description
Claims
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JP2002545031A JPWO2002043441A1 (ja) | 2000-11-24 | 2001-11-26 | セラミックヒータ、および、セラミックヒータの製造方法 |
EP01997972A EP1345472A1 (en) | 2000-11-24 | 2001-11-26 | Ceramic heater, and production method for ceramic heater |
US10/343,833 US6924464B2 (en) | 2000-11-24 | 2001-11-26 | Ceramic heater and manufacturing method of ceramic heater |
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US (1) | US6924464B2 (ja) |
EP (1) | EP1345472A1 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011507188A (ja) * | 2007-12-17 | 2011-03-03 | モメンティブ パフォーマンス マテリアルズ インコーポレイテッド | 積層ヒータ構造用の電極チューニング方法及び装置 |
KR20170051505A (ko) * | 2014-09-09 | 2017-05-11 | 세람테크 게엠베하 | 다중-층 냉각 엘리먼트 |
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Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0245602U (ja) * | 1988-09-26 | 1990-03-29 | ||
JPH06202511A (ja) * | 1992-12-29 | 1994-07-22 | Canon Inc | 加熱装置 |
JPH07263530A (ja) * | 1993-06-24 | 1995-10-13 | Tokyo Electron Ltd | 真空処理装置およびそれに用いる載置台 |
JPH10178253A (ja) * | 1996-12-17 | 1998-06-30 | Santa Keikinzoku Kogyo Kk | 配線板用積層体及びその製造方法 |
JPH1140330A (ja) * | 1997-07-19 | 1999-02-12 | Ibiden Co Ltd | ヒーターおよびその製造方法 |
JP2000311767A (ja) * | 1999-02-24 | 2000-11-07 | Ibiden Co Ltd | セラミック基材 |
JP2001244059A (ja) * | 2000-02-28 | 2001-09-07 | Kyocera Corp | セラミックヒーター及びこれを用いたウエハ加熱装置 |
JP2001297858A (ja) * | 1999-11-24 | 2001-10-26 | Ibiden Co Ltd | セラミックヒータ |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US246909A (en) * | 1881-09-13 | Apparatus for operating fans | ||
US247814A (en) * | 1881-10-04 | Car-truck | ||
US233937A (en) * | 1880-11-02 | knowleb | ||
US4002883A (en) * | 1975-07-23 | 1977-01-11 | General Electric Company | Glass-ceramic plate with multiple coil film heaters |
JPS59191285A (ja) * | 1983-04-15 | 1984-10-30 | 淡路産業株式会社 | 表面発熱固体 |
JPH0718324B2 (ja) | 1988-08-04 | 1995-03-01 | 防衛庁技術研究本部長 | ランキンサイクル型エンジンを備えた水中航走体の起動方式 |
US5118983A (en) * | 1989-03-24 | 1992-06-02 | Mitsubishi Denki Kabushiki Kaisha | Thermionic electron source |
US5294778A (en) * | 1991-09-11 | 1994-03-15 | Lam Research Corporation | CVD platen heater system utilizing concentric electric heating elements |
JPH07307377A (ja) * | 1993-12-27 | 1995-11-21 | Shin Etsu Chem Co Ltd | 静電チャック付セラミックスヒーター |
JPH07280462A (ja) * | 1994-04-11 | 1995-10-27 | Shin Etsu Chem Co Ltd | 均熱セラミックスヒーター |
JP2001118664A (ja) | 1999-08-09 | 2001-04-27 | Ibiden Co Ltd | セラミックヒータ |
ATE301916T1 (de) | 1999-11-19 | 2005-08-15 | Ibiden Co Ltd | Keramisches heizgerät |
WO2001041508A1 (fr) | 1999-11-30 | 2001-06-07 | Ibiden Co., Ltd. | Appareil chauffant en ceramique |
JP3228924B2 (ja) | 2000-01-21 | 2001-11-12 | イビデン株式会社 | 半導体製造・検査装置用セラミックヒータ |
JP2001244320A (ja) | 2000-02-25 | 2001-09-07 | Ibiden Co Ltd | セラミック基板およびその製造方法 |
-
2001
- 2001-11-26 US US10/343,833 patent/US6924464B2/en not_active Expired - Lifetime
- 2001-11-26 JP JP2002545031A patent/JPWO2002043441A1/ja active Pending
- 2001-11-26 WO PCT/JP2001/010285 patent/WO2002043441A1/ja not_active Application Discontinuation
- 2001-11-26 EP EP01997972A patent/EP1345472A1/en not_active Withdrawn
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0245602U (ja) * | 1988-09-26 | 1990-03-29 | ||
JPH06202511A (ja) * | 1992-12-29 | 1994-07-22 | Canon Inc | 加熱装置 |
JPH07263530A (ja) * | 1993-06-24 | 1995-10-13 | Tokyo Electron Ltd | 真空処理装置およびそれに用いる載置台 |
JPH10178253A (ja) * | 1996-12-17 | 1998-06-30 | Santa Keikinzoku Kogyo Kk | 配線板用積層体及びその製造方法 |
JPH1140330A (ja) * | 1997-07-19 | 1999-02-12 | Ibiden Co Ltd | ヒーターおよびその製造方法 |
JP2000311767A (ja) * | 1999-02-24 | 2000-11-07 | Ibiden Co Ltd | セラミック基材 |
JP2001297858A (ja) * | 1999-11-24 | 2001-10-26 | Ibiden Co Ltd | セラミックヒータ |
JP2001244059A (ja) * | 2000-02-28 | 2001-09-07 | Kyocera Corp | セラミックヒーター及びこれを用いたウエハ加熱装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011507188A (ja) * | 2007-12-17 | 2011-03-03 | モメンティブ パフォーマンス マテリアルズ インコーポレイテッド | 積層ヒータ構造用の電極チューニング方法及び装置 |
KR20170051505A (ko) * | 2014-09-09 | 2017-05-11 | 세람테크 게엠베하 | 다중-층 냉각 엘리먼트 |
KR102421016B1 (ko) | 2014-09-09 | 2022-07-13 | 세람테크 게엠베하 | 다중-층 냉각 엘리먼트 |
CN107490034A (zh) * | 2017-09-21 | 2017-12-19 | 安徽环境科技研究院股份有限公司 | 一种折叠连体电热炉 |
CN107490034B (zh) * | 2017-09-21 | 2023-05-02 | 安徽环境科技研究院股份有限公司 | 一种折叠连体电热炉 |
TWI787310B (zh) * | 2017-10-30 | 2022-12-21 | 日商邁圖技術(日本)股份有限公司 | 加熱器及其製造方法 |
KR20210008522A (ko) * | 2019-04-16 | 2021-01-22 | 니뽄 도쿠슈 도교 가부시키가이샤 | 유지 장치의 제조 방법, 유지 장치용 구조체의 제조 방법 및 유지 장치 |
KR102495415B1 (ko) | 2019-04-16 | 2023-02-06 | 니뽄 도쿠슈 도교 가부시키가이샤 | 유지 장치의 제조 방법, 유지 장치용 구조체의 제조 방법 및 유지 장치 |
Also Published As
Publication number | Publication date |
---|---|
EP1345472A1 (en) | 2003-09-17 |
US20040060925A1 (en) | 2004-04-01 |
US6924464B2 (en) | 2005-08-02 |
JPWO2002043441A1 (ja) | 2004-04-02 |
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