TWI787310B - 加熱器及其製造方法 - Google Patents

加熱器及其製造方法 Download PDF

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TWI787310B
TWI787310B TW107126253A TW107126253A TWI787310B TW I787310 B TWI787310 B TW I787310B TW 107126253 A TW107126253 A TW 107126253A TW 107126253 A TW107126253 A TW 107126253A TW I787310 B TWI787310 B TW I787310B
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heater
terminals
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松井誠彦
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日商邁圖技術（日本）股份有限公司
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Abstract

對於在端子間並聯地形成有加熱器圖案的並聯型加熱器，不要求熟練就能夠容易進行產品化前的電阻調整而無損其原本的功能。於在端子（A、B）間並聯地設置有加熱器圖案（31、32）的加熱器（30）中，各端子分割成兩部分、即僅與加熱器圖案（31）導通的分割端子（37）和僅與加熱器圖案（32）導通的分割端子（38）。在製作加熱器主體（36）後且安裝供電螺栓（50）前的狀態下，對形成於分割端子（37、37）之間的虛擬串聯路徑（45）和形成於分割端子（38、38）之間的虛擬串聯路徑（46）分別調整電阻後，通過對各端子安裝供電螺栓而使多個虛擬串聯加熱器圖案之間導通，形成並聯電路。

Description

加熱器及其製造方法
本發明涉及一種加熱器及其製造方法，上述加熱器在半導體製造工藝等中適當地用作加熱晶片的加熱器。
陶瓷加熱器等加熱器在半導體、液晶的製造工藝中廣泛用作用於加熱晶片的加熱裝置，已知一種加熱器，其在端子間以螺旋狀、旋渦狀、蜿蜒狀等既定加熱器圖案在基材上形成由PG（熱解石墨）等導電性材料構成的加熱器元件（專利文獻1等）。
這樣的加熱器有：在端子A、B之間串聯地形成有加熱器圖案11的串聯型加熱器10（圖7）、及在端子A、B之間並聯地形成有加熱器圖案21、22的並聯型加熱器20（圖8），根據被加熱物的形狀或外徑、組裝有加熱器的裝置的使用目的、應用的電源等，以能夠發揮最佳加熱性能的方式適當選擇使用。另外，圖7的串聯型加熱器10及圖7的並聯型加熱器20中的加熱器圖案11及21、22均是作為簡化的一例表示。
在許多情況下，如果利用加熱器加熱半導體晶片等被加熱物，那麼具有其外周部的溫度低於內周部的傾向，因此在加熱器的設計中，減小外周部的電阻值，增大內周部的電阻值，從而對從外周部到內周部的整個區域賦予熱均勻性。或者，視情況有時也要求對外周部與內周部、上半部與下半部、右半部與左半部等不同的區域賦予不同的放熱性。在任一情況下，為了滿足其設計要求，都必須調整加熱器圖案的電阻值。
例如，圖7所示的串聯型加熱器10的加熱器圖案11在其每個半周沿徑向具有外周部11a、中間部11b、及內周部11c，參照圖9說明為了使這些各部分均等地發熱而對這些各部分的每個調整電阻值的情況的一例，為了測定各部分的電阻值，設定測定點P1～P4，應進行調整以使端子A至測定點P1的區間（外周部11a）的電阻值r1成為1.59 Ω、測定點P1至測定點P2的區間（中間部11b）的電阻值r2成為0.96 Ω、測定點P2至測定點P3的區間（內周部11c）的電阻值r3成為1.36 Ω、測定點P3至測定點P4的區間（中間部11b）的電阻值r4成為0.96 Ω、測定點P4至端子B的區間（外周部11a）的電阻值r5成為1.59 Ω（各區間電阻值r1～r5是調整後的基準值）。
在串聯型加熱器10的加熱器圖案11中，能夠從端子A經由測定點P1～P4至端子B單向地測定、調整電阻值。即，從端子A至各測定點（包括端子B）的電阻值與其間的總區間電阻值一致（例如，從端子A至P4的電阻值為r1＋r2＋r3＝3.91 Ω），因此只要在端子A與各測定點P1～P4及端子B之間測定電阻值，以它們與上述區間電阻值相符的方式依次調整即可，能夠比較容易地進行電阻調整。具體來說，能夠將加熱器圖案11的元件以比設計電阻值低一些的方式形成得厚一些，並根據在各測定點所測定的電阻值切削該區間的元件來調整電阻。
然而，於在端子A、B間分別形成有遍及半周的加熱器圖案21、22的並聯型加熱器20（圖8）中，即便欲在加熱器圖案21、22內設定的多個測定點測定電阻值並加以調整，在各測定點所測定的電阻值也有從端子A至該測定點的路徑（A-Pn）和從該測定點至端子A的路徑（Pn-A）這2條電流路徑，如果切削經測定的區間的元件來調整電阻，那麼其他區間的電阻值也會變化，所以必須考慮這些進行加工，存在對調整電阻要求熟練的問題。
參照圖10詳細地進行說明，將加熱器20的設計電阻值設為1.61 Ω，在端子A、B間的加熱器圖案21、22中設定測定點P11～P14，應進行調整以使端子A與測定點P1之間的區間（加熱器圖案21的外周部21a及中間部21b）的電阻值r11成為1.01 Ω、測定點P11、P12之間的區間（加熱器圖案21的內周部21c及中間部21b）的電阻值r12成為0.97 Ω、測定點P12與端子B之間的區間（加熱器圖案21的外周部21a）的電阻值r13成為0.68 Ω、端子B與測定點P13之間的區間（加熱器圖案22的外周部22a及中間部22b）的電阻值r14成為1.01 Ω、測定點P13、P14之間的區間（加熱器圖案22的內周部22c及中間部22b）的電阻值r15成為0.97 Ω、測定點P14與端子A之間的區間（加熱器圖案22的外周部22a）的電阻值r15成為0.68 Ω（各區間電阻值r11～r15是調整後的基準值）。
這種情況下的各區間的設計上的電阻值如表1所示，設計成路徑A-B與路徑B-A完全並聯且具有相同的電阻值（1.61 Ω），並且在各路徑中位於對稱位置的測定區間（A-P11與B-P14、P11-P12與P13-P14、P12-B與P14-A）具有相同的電阻值。在並聯圖案中，對於各測定點，從端子A起的路徑和至端子A的路徑這2條路徑並聯，所以例如端子A與測定點P11之間的區間（A-P11）中的電阻值為1/｛1/r11＋1/（r12＋r13＋r14＋r15＋r16）｝＝1/（1/1.26＋1/5.18）＝1.01 Ω（參照圖10（b））。
（表1）
像這樣，在並聯圖案中，對於各測定點，從端子A起的路徑和從該測定點至端子A的路徑這2條路徑並聯，所以各測定點上的電阻值不像串聯圖案那樣是單純的總計值，如果在某一區間調整電阻，那麼其他區間的電阻值也會變化，極難進行精密的調整。在構成並聯路徑的區間A-Pn與區間Pn（-B）-A的電阻值之差大的情況下特別難以調整，對元件加工要求熟練的技術。
對這一點示出具體例來更詳細地進行說明，若僅在製造加熱器時的CVD條件下則實際上難以使構成並聯型加熱器20的加熱器圖案21、22的元件的厚度遍及整個區域完全相同，多數情況下，元件的厚度局部不同地形成。因此，在各測定點P11、P12、B、P13、P14所測定的測定電阻值r11～r16存在大幅偏離圖10（b）所示的基準值而成為如圖11所示的測定值的情況。在該例中，並聯型加熱器20的加熱器圖案21、22的上半部的元件大致形成為規定的厚度，因此上半部的區間電阻值r11、r12、r13均大致符合圖10（b）所示的基準值，幾乎不需要通過元件切削加工來進行電阻調整，但下半部的元件形成得比規定厚，所以下半部的區間電阻值r14～r16均比圖10（b）所示的基準值低0.8～1.1 Ω左右，必須通過切削使該部分的元件變薄來調整電阻以使它們的區間電阻值與基準值大致相同。
例如，由於測定區間B-P13的測定電阻值0.90 Ω低於圖10（b）所示的同一區間的電阻值r14＝1.01 Ω，所以必須切削加熱器元件來調整電阻，但根據前面的式子可知，各區間電阻值也和其他區間的區間電阻值相關聯，所以如果改變該區間電阻值r14，那麼前面的其他區間（原本就接近基準值而不需要調整電阻的區間、已經調整過電阻的區間）的電阻值也會改變。因此，在對某一區間進行電阻調整時，必須在預測由此其他區間的電阻值也會變化及其變化量的基礎上，一面考慮整體的平衡一面進行元件切削加工，要求基於經驗法則的熟練技術。 現有技術文獻 專利文獻
專利文獻1：JP特開平11-354260號公報
（發明要解決的課題）
因此，本發明要解決的課題在於：對於在端子間並聯地形成有加熱器圖案的並聯型加熱器，不要求熟練就能夠容易進行產品化前的電阻調整而無損其原本的功能。 （用於解決課題的手段）
即，本案的技術方案1涉及的發明是一種並聯型加熱器，該並聯型加熱器在分別要安裝供電螺栓的一對端子間並聯地形成有多個加熱器圖案，其特徵在於，各端子根據加熱器圖案數量以相互不接觸的方式分割成多個，這些多個分割端子之間通過供電螺栓導通，在未安裝供電螺栓的狀態下，在一個端子的一個分割端子與另一個端子的一個分割端子之間形成有多個虛擬串聯加熱器圖案，通過安裝供電螺栓，多個虛擬串聯加熱器圖案之間導通而形成並聯電路。
本案的技術方案2涉及的發明根據技術方案1所述的並聯型加熱器，其特徵在於，供電螺栓的頭部直接或借助由導電性材料構成的墊片與形成加熱器圖案的加熱器元件接觸。
本案的技術方案3涉及的發明根據技術方案1或2所述的並聯型加熱器，其特徵在於，在一對端子間並聯地形成有第一及第二加熱器圖案，各端子分割成僅與第一加熱器圖案導通的第一分割端子和僅與第二加熱器圖案導通的第二分割端子。
本案的技術方案4涉及的發明根據技術方案3所述的並聯型加熱器，其特徵在於，第一及第二分割端子分別形成為大致半圓環狀，利用以在徑向上延長的方式設置在它們之間的間隙使第一及第二加熱器圖案絕緣。
本案的技術方案5涉及的發明根據技術方案1或2所述的並聯型加熱器，其特徵在於，在一對端子間並聯地形成有第一至第四加熱器圖案，各端子分割成僅與第一加熱器圖案導通的第一分割端子、僅與第二加熱器圖案導通的第二分割端子、僅與第三加熱器圖案導通的第三分割端子、及僅與第四加熱器圖案導通的第四分割端子。
本案的技術方案6涉及的發明根據技術方案5所述的並聯型加熱器，其特徵在於，第一至第四分割端子分別形成為大致四分之一圓環狀，利用以在徑向及周向上延長的方式設置在它們之間的間隙使第一至第四加熱器圖案絕緣。
本案的技術方案7涉及的發明是一種權利要求1至6所述的並聯型加熱器的製造方法，其特徵在於，製作在一對端子間並聯地形成有多個加熱器圖案的加熱器主體，在對各端子安裝供電螺栓前的狀態下，對形成於一個端子的一個分割端子與另一個端子的一個分割端子之間的多個虛擬串聯加熱器圖案進行電阻調整後，通過對各端子安裝供電螺栓而使多個虛擬串聯加熱器圖案之間導通，從而形成並聯電路。 （發明效果）
根據本發明，在未對端子安裝供電螺栓的狀態下，在一個端子的一個分割端子與另一個端子的一個分割端子之間形成有多個虛擬串聯加熱器圖案。因此，能夠對該虛擬串聯加熱器圖案以與現有的串聯型加熱器相同的方式比較容易地進行電阻調整。其後，通過對端子安裝供電螺栓而使多個虛擬串聯加熱器圖案之間導通，形成並聯電路，因此，完成品成為與現有的並聯型加熱器相同的結構。由此，能夠穩定、高效地提供個體差異小的產品。
以下列舉實施例對本發明進行詳述。
（實施例1）
圖1及圖2示出本發明的一個實施方式（實施例1）涉及的並聯型加熱器30。在該加熱器30中，對稱形狀的加熱器圖案31、32並聯地形成於端子A、B間。
該加熱器30具有由加熱器底座33、加熱器元件34、及外覆層35形成3層層疊結構的加熱器主體36，上述加熱器底座33至少其正背面由PBN（熱分解性氮化硼，包括添加了微量的碳的氮化硼）等絕緣材料形成為圓板狀；上述加熱器元件34構成加熱器圖案31、32（用點劃線表示中心路徑），由PG（熱解性石墨）等導電材料構成；上述外覆層35由PBN等絕緣材料構成。加熱器主體36是通過如下方式製造的：按照常規方法，在加熱器底座33上蒸鍍加熱器元件34，去除成為加熱器圖案31、32的部分以外的部分，從而加工出加熱器圖案31、32，進而在其上形成外覆層35後，去除端子部的外覆層35而使加熱器元件34露出，形成為端子A、B。另外，外覆層35在圖2（b）中示出，但在圖1及圖2（a）中省略了圖示。
各端子A、B是作為大致半圓環狀地分割成兩部分所得的分割端子部37、38而形成的，構成為具有：供電螺栓40，其貫穿插入到貫通加熱器底座33的螺栓孔39；螺母41，其夾著加熱器主體36螺合到供電螺栓40；以及墊片42、43。分割端子部37僅與加熱器圖案31導通，分割端子部38僅與加熱器圖案32導通，分割端子部37、38被在徑向上延長的間隙44斷開而絕緣，但通過安裝供電螺栓40，供電螺栓40的頭部40a夾著墊片42與分割端子部37、38兩者接觸，因此加熱器圖案31、32導通而形成並聯型加熱器30。供電螺栓40及墊片42由PG等導電性材料形成。墊片43可以是導電性材料，也可以是絕緣性材料。
圖3及圖4示出從如上述那樣構成的並聯型加熱器30去除了供電螺栓40的狀態（換句話說，是在加熱器30的製造過程中製作加熱器主體36後且安裝供電螺栓40前的狀態）。如上文所述，在該狀態下，分割端子部37與分割端子部38因間隙44而絕緣，因此加熱器圖案31形成於端子A、B的分割端子部37、37之間，加熱器圖案32形成於端子A、B的分割端子部38、38之間，分別成為串聯的加熱器路徑45、46。因此，在該狀態下，與上文所述的串聯型加熱器10（圖7）的情況同樣地，能夠容易進行電阻調整。
參照圖5，對與上文所述的現有的並聯型加熱器20（圖8）同樣地在加熱器圖案31、32中設置電阻測定點P21～P24來進行電阻調整的情況進行說明。在該例中，將加熱器30的設計電阻值設為1.61 Ω（路徑45、46的電阻值均設為3.22 Ω），應進行調整以使端子A與測定點P1之間的區間電阻值r21＝1.26 Ω、測定點P21、P22間的區間電阻值r22＝1.19 Ω、測定點P22與端子B之間的區間電阻值r23＝0.77 Ω、端子B與測定點P23之間的區間電阻值r24＝1.26 Ω、測定點P23、P24間的區間電阻值r25＝1.19 Ω、測定點P24與端子A之間的區間電阻值r25＝0.77 Ω（各區間電阻值r21～r25是調整後的基準值）。
在沒有安裝供電螺栓40的狀態下，路徑45是從端子A至端子B的串聯路徑，因此，以與參照圖9對串聯型加熱器10（圖7）進行說明的電阻調整相同的方式，在端子A與各測定點P21、P22及端子B之間測定電阻值，以它們符合上述基準值的方式依次進行調整即可，對路徑46也同樣地進行該操作即可，所以能夠比較容易地進行電阻調整。具體來說，可以先將加熱器圖案31、32的加熱器元件34以比設計電阻值低一些的方式形成得厚一些，並根據在各測定點測定的電阻值切削該區間的加熱器元件34來調整電阻。
像這樣，通過虛擬串聯路徑45、46來進行電阻調整後，如果在端子A、B安裝供電螺栓40、螺母41及墊片42、43，則如上文所述，供電螺栓40的頭部40a夾著墊片42與分割端子部37、38兩者接觸，因此加熱器圖案31、32導通而成為並聯路徑，製造出並聯型加熱器30。
（實施例2）
以上所說明的實施例1的並聯型加熱器30中，在一對端子A、B間並聯地設置有2個加熱器圖案31、32，因此與此對應地具有利用徑向的間隙44將各端子A、B分割成兩部分即分割端子部37、38的結構，但在大型加熱器等中需要更精密的溫度控制的情況下，存在在一對端子A、B間並聯地形成多個、例如4個加熱器圖案的情況。
這種情況的一例如圖6所示。即，該並聯型加熱器50在端子A、B間形成有4個加熱器圖案51～54，端子A、B分割成四部分即分割端子部55～58。加熱器圖案51（用點劃線表示中心路徑）形成於端子A、B的分割端子部55、55之間，加熱器圖案52（用虛線表示中心路徑）形成於端子A、B的分割端子部56、56之間，加熱器圖案53（用點劃線表示中心路徑）形成於端子A、B的分割端子部57、57之間，加熱器圖案54（用虛線表示中心路徑）形成於端子A、B的分割端子部58、58之間。這些分割端子部55～58借助沿徑向及周向延長的間隙59而斷開，分別形成為大致四分之一圓環狀。
以上，對本發明列舉實施例詳細地進行了說明，但本發明並不限定於這些，可以在由權利要求書所劃定的發明的範圍內進行各種各樣的變形來實施。例如，在實施例1中，在安裝供電螺栓40時借助墊片42使加熱器圖案31、32（路徑45、46）之間導通，但也可以省略墊片42，使供電螺栓頭部40a的背面直接與分割端子部37、38接觸而導通。另外，在一個加熱器中設置有多對端子的情況下，只要使各對端子根據在端子間並聯的多個加熱器圖案數量分割成兩部分（實施例1）或四部分（實施例2）等，以未安裝供電螺栓時形成虛擬串聯圖案的方式構成即可。
10‧‧‧串聯型加熱器（現有技術）20‧‧‧並聯型加熱器（現有技術）30‧‧‧並聯型加熱器（本發明實施例）31、32‧‧‧並聯加熱器圖案33‧‧‧加熱器底座34‧‧‧加熱器元件35‧‧‧外覆層36‧‧‧加熱器主體37、38‧‧‧分割端子部（分割成兩部分）39‧‧‧螺栓孔40‧‧‧供電螺栓41‧‧‧螺母42‧‧‧墊片43‧‧‧墊片44‧‧‧間隙45、46‧‧‧路徑50‧‧‧並聯型加熱器（本發明實施例）51～54‧‧‧並聯加熱器圖案55～58‧‧‧分割端子部（分割成四部分）59‧‧‧間隙
圖1是本發明的一個實施方式（實施例1）涉及的並聯型加熱器（完成狀態或者安裝有供電螺栓的狀態）的整體俯視圖。
圖2是圖1的端子部放大俯視圖（a）及由圖（a）中的I-I剖切線所得到的剖視圖（b）。
圖3是去除了供電螺栓的狀態的整體俯視圖。
圖4是圖3的端子部放大俯視圖（a）及由圖（a）中的II-II剖切線所得到的剖視圖（b）。
圖5是在圖3及圖4所示的狀態下進行電阻調整的說明圖。
圖6是示出在本發明的另一實施方式（實施例2）涉及的並聯型加熱器中與圖3同樣地去除了供電螺栓的狀態的整體俯視圖。
圖7是現有技術涉及的串聯型加熱器的整體俯視圖。
圖8是現有技術涉及的並聯型加熱器的整體俯視圖。
圖9是對圖7的串聯型加熱器的加熱器圖案設定了電阻測定點的整體俯視圖（a）及其電阻調整說明圖。
圖10是對圖8的並聯型加熱器的加熱器圖案設定了電阻測定點的整體俯視圖（a）及其電阻調整說明圖（b）。
圖11是以具體例示出難以對圖8的並聯型加熱器進行電阻調整的電阻調整說明圖。
30‧‧‧加熱器
31,32‧‧‧加熱器圖案
33‧‧‧加熱器底座
34‧‧‧加熱器元件
35‧‧‧外覆層
36‧‧‧加熱器主體
37,38‧‧‧分割端子
40‧‧‧供電螺栓
40a‧‧‧頭部
41‧‧‧螺母
42,43‧‧‧墊片
45,46‧‧‧虛擬串聯路徑
50‧‧‧供電螺栓

Claims (7)

  1. 一種並聯型加熱器，該並聯型加熱器在分別要安裝供電螺栓的一對端子之間並聯地形成有複數個加熱器圖案，前述一對端子的各者根據前述複數個加熱器圖案的數量以不相互接觸的方式分割成複數個，此等複數個分割端子彼此通過前述供電螺栓而導通，在未安裝前述供電螺栓的狀態下，在前述一對端子中的一方的一個分割端子與另一方的一個分割端子之間形成有複數個虛擬串聯加熱器圖案，通過安裝前述供電螺栓，前述複數個虛擬串聯加熱器圖案之間導通而形成並聯電路。
  2. 如請求項1的並聯型加熱器，其中，前述供電螺栓的頭部直接或借助由導電性材料構成的墊片與形成前述複數個加熱器圖案的加熱器元件接觸。
  3. 如請求項1或2的並聯型加熱器，其中，在前述一對端子之間並聯地形成有第一及第二加熱器圖案，前述一對端子的各者分割成僅與前述第一加熱器圖案導通的第一分割端子和僅與前述第二加熱器圖案導通的第二分割端子。
  4. 如請求項3的並聯型加熱器，其中，前述第一及前述第二分割端子分別形成為大致半圓環狀，利用在其等之間以在徑向上延長的方式設置的間隙使前述第一及前述第二加熱器圖案絕緣。
  5. 如請求項1或2的並聯型加熱器，其中，在前述一對端子之間並聯地形成有第一至第四加熱器圖案， 前述一對端子的各者分割成僅與前述第一加熱器圖案導通的第一分割端子、僅與前述第二加熱器圖案導通的第二分割端子、僅與前述第三加熱器圖案導通的第三分割端子、以及僅與前述第四加熱器圖案導通的第四分割端子。
  6. 如請求項5的並聯型加熱器，其中，前述第一至第四分割端子分別形成為大致四分之一圓環狀，利用在其等之間以在徑向及周向上延長的方式設置的間隙使前述第一至第四加熱器圖案絕緣。
  7. 一種並聯型加熱器的製造方法，其為如請求項1至6中任一項的並聯型加熱器的製造方法，其中，製作在一對端子之間並聯地形成有複數個加熱器圖案的加熱器主體，在對前述一對端子的各者安裝供電螺栓前的狀態下，對形成於前述一對端子中的一方的一個分割端子與另一方的一個分割端子之間的複數個虛擬串聯加熱器圖案進行電阻調整後，通過對前述一對端子的各者安裝前述供電螺栓而使前述複數個虛擬串聯加熱器圖案之間導通，從而形成並聯電路。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002043441A1 (fr) * 2000-11-24 2002-05-30 Ibiden Co., Ltd. Element chauffant en ceramique et procede de production
US20040188413A1 (en) * 2003-03-27 2004-09-30 Sumitomo Electric Industries, Ltd. Ceramic Susceptor and Semiconductor or Liquid-Crystal Manufacturing Apparatus in Which the Susceptor Is Installed
US20050014031A1 (en) * 2000-02-24 2005-01-20 Ibiden Co., Ltd. Aluminum nitride sintered body, ceramic substrate, ceramic heater and electrostatic chuck
US20080029195A1 (en) * 2006-07-05 2008-02-07 Zhong-Hao Lu Electrode Pattern For Resistance Heating Element and Wafer processing Apparatus
US9351344B2 (en) * 2013-03-13 2016-05-24 Shin-Etsu Chemical Co., Ltd. Ceramic heater

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09102665A (ja) * 1995-10-04 1997-04-15 Omron Corp 回路基板
JPH10233436A (ja) * 1997-02-18 1998-09-02 Toto Ltd 静電チャック
JPH11317284A (ja) * 1998-04-30 1999-11-16 Komatsu Ltd 温度制御装置
JPH11354260A (ja) * 1998-06-11 1999-12-24 Shin Etsu Chem Co Ltd 複層セラミックスヒータ
JP2004087476A (ja) * 2002-06-26 2004-03-18 Okazaki Mfg Co Ltd ウェハ加熱用熱盤の構造および熱盤の電極固定方法
US7361865B2 (en) * 2003-08-27 2008-04-22 Kyocera Corporation Heater for heating a wafer and method for fabricating the same
JP4570345B2 (ja) * 2003-09-18 2010-10-27 株式会社三幸 熱処理炉
US7280370B2 (en) * 2005-08-26 2007-10-09 Delphi Technologies, Inc. Electronic package and circuit board having segmented contact pads
JP2013004247A (ja) * 2011-06-15 2013-01-07 Shin Etsu Chem Co Ltd セラミックスヒーター
US10679873B2 (en) * 2016-09-30 2020-06-09 Ngk Spark Plug Co., Ltd. Ceramic heater

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050014031A1 (en) * 2000-02-24 2005-01-20 Ibiden Co., Ltd. Aluminum nitride sintered body, ceramic substrate, ceramic heater and electrostatic chuck
WO2002043441A1 (fr) * 2000-11-24 2002-05-30 Ibiden Co., Ltd. Element chauffant en ceramique et procede de production
US20040188413A1 (en) * 2003-03-27 2004-09-30 Sumitomo Electric Industries, Ltd. Ceramic Susceptor and Semiconductor or Liquid-Crystal Manufacturing Apparatus in Which the Susceptor Is Installed
US20080029195A1 (en) * 2006-07-05 2008-02-07 Zhong-Hao Lu Electrode Pattern For Resistance Heating Element and Wafer processing Apparatus
US9351344B2 (en) * 2013-03-13 2016-05-24 Shin-Etsu Chemical Co., Ltd. Ceramic heater

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