WO2002009164A1 - Determination des conditions de traitement thermique - Google Patents

Determination des conditions de traitement thermique Download PDF

Info

Publication number
WO2002009164A1
WO2002009164A1 PCT/JP2001/006352 JP0106352W WO0209164A1 WO 2002009164 A1 WO2002009164 A1 WO 2002009164A1 JP 0106352 W JP0106352 W JP 0106352W WO 0209164 A1 WO0209164 A1 WO 0209164A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat treatment
set temperature
temperature profile
substrates
groups
Prior art date
Application number
PCT/JP2001/006352
Other languages
English (en)
French (fr)
Inventor
Wenling Wang
Koichi Sakamoto
Fujio Suzuki
Moyuru Yasuhara
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000224146A external-priority patent/JP4546623B2/ja
Priority claimed from JP2000224147A external-priority patent/JP4514915B2/ja
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020037001075A priority Critical patent/KR100720775B1/ko
Priority to KR1020067021366A priority patent/KR100757552B1/ko
Priority to EP01951978A priority patent/EP1320124B1/en
Priority to DE60133206T priority patent/DE60133206T2/de
Priority to US10/333,585 priority patent/US6787377B2/en
Publication of WO2002009164A1 publication Critical patent/WO2002009164A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
PCT/JP2001/006352 2000-07-25 2001-07-23 Determination des conditions de traitement thermique WO2002009164A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020037001075A KR100720775B1 (ko) 2000-07-25 2001-07-23 열처리조건의 결정방법
KR1020067021366A KR100757552B1 (ko) 2000-07-25 2001-07-23 열처리장치, 열처리방법 및 기록매체
EP01951978A EP1320124B1 (en) 2000-07-25 2001-07-23 Method of determining heat treatment conditions
DE60133206T DE60133206T2 (de) 2000-07-25 2001-07-23 Verfahren zur bestimmung von parametern einer thermischen behandlung
US10/333,585 US6787377B2 (en) 2000-07-25 2001-07-23 Determining method of thermal processing condition

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000224146A JP4546623B2 (ja) 2000-07-25 2000-07-25 熱処理装置の制御条件決定方法
JP2000224147A JP4514915B2 (ja) 2000-07-25 2000-07-25 熱処理装置、基板の熱処理方法、および処理レシピを記録した媒体
JP2000-224147 2000-07-25
JP2000-224146 2000-07-25

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10/333,585 A-371-Of-International US6787377B2 (en) 2000-07-25 2001-07-23 Determining method of thermal processing condition
US10/871,277 Continuation US7138607B2 (en) 2000-07-25 2004-06-21 Determining method of thermal processing condition

Publications (1)

Publication Number Publication Date
WO2002009164A1 true WO2002009164A1 (fr) 2002-01-31

Family

ID=26596634

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/006352 WO2002009164A1 (fr) 2000-07-25 2001-07-23 Determination des conditions de traitement thermique

Country Status (6)

Country Link
US (2) US6787377B2 (ja)
EP (1) EP1320124B1 (ja)
KR (2) KR100720775B1 (ja)
DE (1) DE60133206T2 (ja)
TW (1) TW523835B (ja)
WO (1) WO2002009164A1 (ja)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1187188A4 (en) * 2000-02-18 2004-05-26 Tokyo Electron Ltd PROCESS FOR TREATING A WAFER
JP2003209063A (ja) * 2001-11-08 2003-07-25 Tokyo Electron Ltd 熱処理装置および熱処理方法
US7163849B2 (en) * 2002-01-09 2007-01-16 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device
US20040173311A1 (en) * 2003-03-04 2004-09-09 Tomoyoshi Ichimaru Plasma processing apparatus and method
US6855916B1 (en) * 2003-12-10 2005-02-15 Axcelis Technologies, Inc. Wafer temperature trajectory control method for high temperature ramp rate applications using dynamic predictive thermal modeling
US20050202680A1 (en) * 2004-03-15 2005-09-15 Yao-Chia Yeh Method for shrinking a dimension of a gate
JP4329655B2 (ja) * 2004-09-10 2009-09-09 セイコーエプソン株式会社 半導体装置の製造方法及び半導体製造装置。
JP4428175B2 (ja) * 2004-09-14 2010-03-10 株式会社Ｓｕｍｃｏ 気相エピタキシャル成長装置および半導体ウェーハの製造方法
US20060235639A1 (en) * 2005-04-15 2006-10-19 Pietro Piazza Method for calculating temperature as a function of time
ATE405946T1 (de) * 2005-06-10 2008-09-15 Soitec Silicon On Insulator Kalibrierverfahren für apparaturen zur thermischen behandlung
US8501599B2 (en) * 2006-03-07 2013-08-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus and substrate processing method
US20070258505A1 (en) * 2006-05-05 2007-11-08 Systems On Silicon Manufacturing Co. Pte. Ltd. Apparatus for thermocouple setting and flat zone procedure in a furnace
US8104951B2 (en) * 2006-07-31 2012-01-31 Applied Materials, Inc. Temperature uniformity measurements during rapid thermal processing
US20080269819A1 (en) * 2007-04-26 2008-10-30 Xiaohong Zhou Discrimination of supraventricular tachycardia from ventricular tachycardia
JP5101243B2 (ja) * 2007-10-29 2012-12-19 東京エレクトロン株式会社 基板処理装置，基板処理装置の制御方法，およびプログラム
US8354135B2 (en) * 2008-03-17 2013-01-15 Tokyo Electron Limited Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program
DE102008016429A1 (de) * 2008-03-31 2009-10-01 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung dünner Schichten durch einen thermisch aktivierten Prozess unter Anwendung eines Temperaturgradienten über das Substrat hinweg
TW201017790A (en) * 2008-10-17 2010-05-01 Inotera Memories Inc A furnace temperature flip method for thermal budget balance and minimum electric parameter variation
US9068263B2 (en) * 2009-02-27 2015-06-30 Sandvik Thermal Process, Inc. Apparatus for manufacture of solar cells
US8386038B2 (en) 2009-07-01 2013-02-26 Stefano Bianchi Vagal stimulation during atrial tachyarrhythmia to facilitate cardiac resynchronization therapy
US8486726B2 (en) * 2009-12-02 2013-07-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier
DE102010009795B4 (de) * 2010-03-01 2014-05-15 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Herstellung von metallischen Rückkontakten für waferbasierte Solarzellen
US8620425B2 (en) 2010-04-29 2013-12-31 Medtronic, Inc. Nerve signal differentiation in cardiac therapy
US8639327B2 (en) 2010-04-29 2014-01-28 Medtronic, Inc. Nerve signal differentiation in cardiac therapy
US8423134B2 (en) 2010-04-29 2013-04-16 Medtronic, Inc. Therapy using perturbation and effect of physiological systems
US8788028B2 (en) 2010-07-28 2014-07-22 Medtronic, Inc. Parasympathetic stimulation to enhance tachyarrhythmia detection
TWM413957U (en) * 2010-10-27 2011-10-11 Tangteck Equipment Inc Diffusion furnace apparatus
US8781582B2 (en) 2011-01-19 2014-07-15 Medtronic, Inc. Vagal stimulation
US8781583B2 (en) 2011-01-19 2014-07-15 Medtronic, Inc. Vagal stimulation
US8718763B2 (en) 2011-01-19 2014-05-06 Medtronic, Inc. Vagal stimulation
US8706223B2 (en) 2011-01-19 2014-04-22 Medtronic, Inc. Preventative vagal stimulation
US8725259B2 (en) 2011-01-19 2014-05-13 Medtronic, Inc. Vagal stimulation
JP5642612B2 (ja) * 2011-04-05 2014-12-17 東京エレクトロン株式会社 熱処理装置および熱処理方法
KR101339580B1 (ko) * 2012-01-27 2013-12-10 주식회사 엘지실트론 소이 웨이퍼의 에피층 제조방법
JP5774532B2 (ja) * 2012-03-28 2015-09-09 東京エレクトロン株式会社 連続処理システム、連続処理方法、及び、プログラム
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
CN102784747B (zh) * 2012-07-16 2014-12-10 京东方科技集团股份有限公司 一种高温固化炉
KR101589599B1 (ko) * 2014-12-22 2016-01-28 주식회사 엘지실트론 웨이퍼의 제조 방법
JP6358977B2 (ja) * 2015-03-31 2018-07-18 東京エレクトロン株式会社 熱処理装置、熱処理方法、及び、プログラム
JP7032947B2 (ja) * 2018-02-13 2022-03-09 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP6952633B2 (ja) 2018-03-23 2021-10-20 東京エレクトロン株式会社 基板加熱装置及びこれを用いた基板処理装置
US11127607B2 (en) * 2019-11-11 2021-09-21 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Heat processing system
TWI809475B (zh) * 2020-08-12 2023-07-21 美商瓦特洛威電子製造公司 用於提供針對電氣加熱器的可變調降控制之方法及系統
CN117810078B (zh) * 2024-03-01 2024-05-28 合肥晶合集成电路股份有限公司 退火方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05291143A (ja) * 1992-04-15 1993-11-05 Nec Corp 減圧気相成長装置
JPH06318551A (ja) * 1993-05-10 1994-11-15 Toshiba Corp 薄膜の形成方法およびその装置
JPH11186255A (ja) * 1996-11-29 1999-07-09 Sony Corp シリコン酸化膜の形成方法
JP2000077347A (ja) * 1999-09-22 2000-03-14 Dainippon Screen Mfg Co Ltd 基板用熱処理炉
JP2000195809A (ja) * 1998-12-28 2000-07-14 Kokusai Electric Co Ltd 半導体製造方法及び半導体製造装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4309240A (en) * 1980-05-16 1982-01-05 Advanced Crystal Sciences, Inc. Process for chemical vapor deposition of films on silicon wafers
JPS5763826A (en) * 1980-10-04 1982-04-17 Mitsubishi Electric Corp Apparatus for manufacturing semiconductor
US4989970A (en) * 1989-04-26 1991-02-05 Campbell Gregory A Non-contact sensing apparatus and method for temperature profile and thickness determination and control of radiation translucent materials
JPH0382017A (ja) * 1989-08-24 1991-04-08 Nec Corp 半導体装置の製造装置
JPH05267200A (ja) * 1992-03-24 1993-10-15 Hitachi Ltd 半導体熱処理装置
KR950001953A (ko) * 1993-06-30 1995-01-04 이노우에 아키라 웨이퍼의 열처리방법
JP3911071B2 (ja) * 1997-06-13 2007-05-09 サイエンステクノロジー株式会社 高速ランプ加熱処理装置及び高速ランプ加熱処理方法
TW406336B (en) * 1997-10-08 2000-09-21 Applied Materials Inc Foam-based heat exchanger with heating element
US6015465A (en) * 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05291143A (ja) * 1992-04-15 1993-11-05 Nec Corp 減圧気相成長装置
JPH06318551A (ja) * 1993-05-10 1994-11-15 Toshiba Corp 薄膜の形成方法およびその装置
JPH11186255A (ja) * 1996-11-29 1999-07-09 Sony Corp シリコン酸化膜の形成方法
JP2000195809A (ja) * 1998-12-28 2000-07-14 Kokusai Electric Co Ltd 半導体製造方法及び半導体製造装置
JP2000077347A (ja) * 1999-09-22 2000-03-14 Dainippon Screen Mfg Co Ltd 基板用熱処理炉

Also Published As

Publication number Publication date
US20040226933A1 (en) 2004-11-18
KR20030022311A (ko) 2003-03-15
US7138607B2 (en) 2006-11-21
KR100757552B1 (ko) 2007-09-10
DE60133206T2 (de) 2009-03-12
EP1320124B1 (en) 2008-03-12
KR20060114042A (ko) 2006-11-03
EP1320124A4 (en) 2005-09-07
TW523835B (en) 2003-03-11
EP1320124A1 (en) 2003-06-18
DE60133206D1 (de) 2008-04-24
US6787377B2 (en) 2004-09-07
US20030109071A1 (en) 2003-06-12
KR100720775B1 (ko) 2007-05-22

Similar Documents

Publication Publication Date Title
WO2002009164A1 (fr) Determination des conditions de traitement thermique
TW200943452A (en) Substrate processing apparatus and method of controlling substrate processing apparatus
US5654904A (en) Control and 3-dimensional simulation model of temperature variations in a rapid thermal processing machine
US6064799A (en) Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature
WO2010059701A3 (en) Temperature uniformity measurement during thermal processing
CA2436424A1 (en) Method for thermally treating substrates
CN109385623B (zh) 一种薄膜沉积方法和沉积薄膜
WO2008046039A3 (en) Thermal deposition surface treatment method, system and product
WO2004025710A3 (en) Method of heating a substrate in a variable temperature process using a fixed temperature chuck
WO2007005489A3 (en) Method and system for determining optical properties of semiconductor wafers
WO2004051371A3 (en) Template
DE60221649D1 (de) Verfahren zur hochtemperatur- kurzzeithärtung von materialen mit niedrieger dielektrizitätskonstante unter verwendung eines schnellen thermischen prozesses
JP2007531054A5 (ja)
WO2008076320A3 (en) Processing apparatus, coated article and associated method
JP2010168649A (ja) 基板処理装置、成膜方法、電子デバイスの生産方法
WO2004035807A3 (en) Method and system for compensating for anneal non-uniformities
TW200516700A (en) Metho for forming intermetal dielectric
CN100334703C (zh) 校准和使用半导体处理系统的方法
TW200707634A (en) Semiconductor substrate and manufacturing method thereof
CN110970324B (zh) 基板的热处理方法及热处理装置
PL1641575T3 (pl) Sposób prostowania gorących kształtowników
US6132081A (en) Method for calibrating optical sensor used to measure the temperature of a substrate during rapid thermal process
JP3764689B2 (ja) 半導体製造方法および半導体製造装置
US6294394B1 (en) Ramp rate limiter to control stress during ramping
JPH08246058A (ja) 連続式加熱炉における自動燃焼制御方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2001951978

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10333585

Country of ref document: US

Ref document number: 1020037001075

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020037001075

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2001951978

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 2001951978

Country of ref document: EP