WO2001071065A1 - Structure à trous et procédé de fabrication - Google Patents
Structure à trous et procédé de fabrication Download PDFInfo
- Publication number
- WO2001071065A1 WO2001071065A1 PCT/JP2001/002305 JP0102305W WO0171065A1 WO 2001071065 A1 WO2001071065 A1 WO 2001071065A1 JP 0102305 W JP0102305 W JP 0102305W WO 0171065 A1 WO0171065 A1 WO 0171065A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- hole
- opening
- hole structure
- structure according
- less
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000002198 insoluble material Substances 0.000 claims abstract description 51
- 239000011148 porous material Substances 0.000 claims description 32
- 238000005868 electrolysis reaction Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 26
- 238000010586 diagram Methods 0.000 description 24
- 238000004070 electrodeposition Methods 0.000 description 19
- 238000011161 development Methods 0.000 description 13
- 239000010931 gold Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 238000000059 patterning Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01D—MECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
- D01D4/00—Spinnerette packs; Cleaning thereof
- D01D4/02—Spinnerettes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/1433—Structure of nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1625—Manufacturing processes electroforming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
- B41J2/1634—Manufacturing processes machining laser machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1643—Manufacturing processes thin film formation thin film formation by plating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/08—Perforated or foraminous objects, e.g. sieves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
Definitions
- the present invention relates to a hole structure having minute and deep holes, and a method for producing the same.
- the etching method is mainly a method of partially dissolving a metal plate with an acidic solution to form a desired hole.
- the etching method is different from the mechanical processing method in that the opening has a shape other than a circle, such as a square or triangular hole.
- the press working method is a method of punching a plate-like member with a mold having a desired shape, and is particularly suitable for processing a thin plate.
- a large number of holes can be formed simultaneously in a single process, resulting in excellent productivity.
- All of the above processing methods are methods of making holes in the member.
- One of such methods is a manufacturing method called an electrode method.
- the electrode method is a manufacturing method for forming a structure using an electric plating method.
- the following describes the two conventional types of electrolysis. With reference to FIGS. 18 (a) and 18 (b), the first conventional power method will be described.
- an insulating photosensitive material 530 is formed over a conductive substrate 520.
- the thickness of the photosensitive material 530 is preferably about ⁇ .
- the light-sensitive material 530 is patterned (for example, circular) into a desired shape by a general photolithography method.
- an electrode member 510 is deposited on the conductive substrate 520 on which the photosensitive material 530 is formed by an electrodeposition method.
- the electrode method uses the principle of the electric plating method, the electrode member 510 to be deposited is isotropically in the direction of the arrow from the portion where the photosensitive material 530 does not exist. It grows in a special way.
- the electrode member 5100 is grown until the desired shape (shown by a broken line in FIG. 18 (b)) is reached.
- FIG. 18 (a) is a diagram showing a cross section of a pore structure 5100 manufactured by the first electrode method.
- the through hole 511 of the hole structure 5110 has an internal shape as if the jaw is turned down, and has a smaller opening and a larger opening.
- the size d2 of the large opening of the through hole is determined by the thickness of the hole structure 510. Since the photosensitive material 5300 is very thin, it can be considered that the thickness of the hole structure 510 is equal to the depth t of the through hole. More specifically, the relationship between the size d 2 of the large opening of the through hole 5 11 1 and the depth t of the through hole, and the size d 2 of the large opening of the through hole 5 11 1 The relationship with the pitch b can be expressed by the following equation.
- a photosensitive material 640 is formed thick on a conductive substrate 620 (see FIG. 19 (a)).
- the thickness of the photosensitive material 640 must be equal to or greater than the thickness of the desired pore structure 610.
- the photosensitive material 640 is partially exposed to ultraviolet light through an exposure mask 630 formed so that only desired portions transmit ultraviolet light (see FIG. 19 (b)).
- This exposure method is the same as the exposure method that is usually performed when manufacturing LSI, and is called a front exposure method.
- the photosensitive material 640 is developed with a dedicated developer to form a patterned resist 650 (see FIG. 19 (c)).
- the pattern dimension dr that can be patterned by this method is a dimension equal to or greater than the thickness tr of the resist 650. Therefore, when a small pattern is formed, the thickness tr of the resist 65 must be reduced.
- a hole structure 610 is formed on the substrate 620 by an electrodeposition method (see FIG. 19D).
- the internal shape of the through-hole 611 formed in the completed hole structure 610 has a shape corresponding to the shape of the resist 650. Therefore, the size of the opening of the through-hole 611 is the same as the pattern dimension dr of the resist 650, and the depth t of the through-hole 611 is less than the thickness tr of the resist 650. become. As a result, the depth t of the formed through-hole 611 is necessarily smaller than the opening d.
- the size of the opening of the through hole cannot be made smaller than the diameter of 60 ⁇ . Further, the shape of the opening of the through hole was limited to a circle or an ellipse. In addition, since the through holes are machined one by one, productivity was extremely low.
- the size of the opening of the through hole that can be processed is determined by the depth of the opening to be etched. That is, the through-hole could not be made deeper than the size of the opening of the through-hole. Therefore, deep through holes could not be machined.
- the press working method could not make the through hole deeper than the size of the opening of the through hole. Therefore, it was not possible to deeply process minute through holes.
- a large pressure is applied to the member to form a through hole, and the member must withstand a large pressure.
- the pitch between the through holes was small, the members could not withstand a large pressure. Therefore, when the pitch between the through holes is small, the press working method cannot be used.
- the through-hole of the hole structure manufactured by the conventional first electrode method has a unique R shape with a radius almost the same as the depth t of the through-hole. It has a good internal shape. Therefore, the size of one opening O Ol / 71065 PCT / JPOI / 02305 The length d1 can be reduced, but the size of the other opening d2 cannot be less than twice the depth t of the through hole . That is, the through hole could not be deepened due to the size d 2 of the opening having a large through hole.
- the pitch b between the through holes cannot be reduced to less than twice the depth t of the through holes. That is, the through holes could not be arranged at a narrow pitch.
- the hole structure manufactured by the conventional second electrode method has a larger through hole depth d 2 than the larger through hole depth d 2, as shown in FIG. 19 (e). t could not be deepened.
- An object of the present invention is to provide a hole structure having a minute opening and a deep hole, and a method for manufacturing the same.
- Another object of the present invention is to provide a method for manufacturing a highly productive hole structure, which can manufacture many holes at once.
- a method for manufacturing a pore structure includes the steps of: forming an opaque conductive layer having a predetermined pattern on a transparent substrate; and forming the opaque conductive layer on the transparent substrate. Forming a photosensitive insoluble material layer on one side, exposing the photosensitive insoluble material layer from the other side of the transparent substrate where the opaque conductive layer is not formed, and developing the photosensitive insoluble material. Forming a resist corresponding to a predetermined pattern, and the one surface on which the resist is formed. Forming a pore structure by an electric plating method.
- a pore structure according to the present invention has
- the through hole is formed by back exposure and electrodeposition, and the internal shape of the through hole is a resist.
- the size d of the second opening has a size in the range of not less than 2 ⁇ and not more than 50 ⁇ , and the depth t of the through hole is longer than d and 1 It has a depth of 5 d or less.
- a hole structure according to the present invention has a through hole having a first opening and a second opening having a size equal to or larger than the size of the first opening.
- the size of the second opening d is 2 ⁇ or more and 50 ⁇ or less, and the depth t of the through hole is longer than d and 15 ⁇ d or less. It is characterized by having
- the ratio (s2Zsl) of the area of the first opening to s1 and the area of the second opening to s2 has a value of 1 or more and 9 or less.
- the angle 0 formed by the center line of the through hole and the inner wall of the through hole has a value in the range of 0 ° or more and 12 ° or less.
- the present invention by using the back exposure method, it has become possible to provide a hole structure having a minute opening and a deep through-hole and a method of manufacturing the same.
- a small through hole having a polygonal opening other than a circular or elliptical shape, which cannot be achieved by a machining method (cutting method) using a drill is designed. And manufacturing. Further, according to the present invention, it has become possible to provide a method of manufacturing a highly productive hole structure in which a large number of through holes can be manufactured at a time by using the back exposure method. .
- a method for manufacturing a hole structure having a fine opening and having a deeper through-hole by repeatedly executing the method for manufacturing a hole structure. Became possible. In such a hole structure, the through holes of the respective structures are connected, and it is possible to open a deeper through hole.
- FIG. 1 (a) is a diagram showing a patterning step in the first manufacturing method of the present invention.
- FIG. 1 (b) shows a coating step
- FIG. 1 (c) shows an exposure step
- FIG. 1 (d) shows a development step
- FIG. 1 (e) shows an electrodeposition step.
- FIG. 2A is a cross-sectional view of the hole structure manufactured by the first manufacturing method of the present invention.
- FIG. 2 (b) is a perspective view of FIG. 2 (a).
- FIG. 3A is a diagram showing an exposure step in the front exposure method.
- FIG. 3 (b) is a diagram showing an example of the shape of the resist formed according to FIG. 3 (a).
- FIG. 4 (a) is a cross-sectional view of another hole structure manufactured by the first manufacturing method of the present invention.
- FIG. 4 (b) is a diagram showing the shape of the register corresponding to FIG. 4 (a).
- FIG. 5 (a) is a cross-sectional view of still another hole structure manufactured by the first manufacturing method of the present invention.
- FIG. 5 (b) is a diagram showing the shape of the register corresponding to FIG. 5 (a).
- FIG. 6 is a cross-sectional view of still another hole structure manufactured by the first manufacturing method of the present invention.
- FIG. 7 is a perspective view of still another hole structure manufactured by the first manufacturing method of the present invention.
- FIG. 8 (a) is a diagram showing a patterning step in the second manufacturing method of the present invention.
- FIG. 8 (b) is a diagram showing a coating process
- FIG. 8 (c) is a diagram showing an exposure process
- FIG. 8 (d) is a diagram showing a developing process
- FIG. 8 (e) is a diagram showing an electrodeposition process.
- FIG. 9 (a) is a diagram showing a second resist removing step in the second manufacturing method of the present invention.
- 9 (b) shows the second patterning step
- FIG. 9 (c) shows the second exposure step
- FIG. 9 (d) shows the second imaging step
- FIG. 9 (e) FIG. 3 is a diagram showing a second power supply step.
- FIG. 9 (f) is a cross-sectional view of the hole structure manufactured by the second manufacturing method.
- FIG. 10 (a) is a diagram showing an n- th resist removing step in the second manufacturing method of the present invention. Further, FIG. 10 (b) shows the n-th patterning step, FIG. 10 (c) shows the n-th exposure step, FIG. 10 (d) shows the n-th developing step, FIG. 10 (e) is a diagram showing the n-th power supply step, respectively. FIG. 10 (f) is a cross-sectional view of another hole structure manufactured by the second manufacturing method.
- FIG. 11 is a diagram illustrating a first use example of the hole structure according to the present invention.
- FIG. 12 is a diagram illustrating a second use example of the hole structure according to the present invention.
- FIG. 14 is a diagram illustrating a third example of use of the hole structure according to the present invention.
- FIG. 14 is a diagram illustrating a fourth example of use of the hole structure according to the present invention.
- FIG. 14 is a diagram illustrating a fifth use example of the hole structure.
- FIG. 16 is a diagram illustrating a sixth example of use of the hole structure according to the present invention.
- FIG. 17 is a diagram illustrating a seventh example of use of the hole structure according to the present invention.
- a) is a cross-sectional view of a hole structure manufactured by a conventional first electrode method.
- FIG. 18 (b) is a diagram for explaining the first conventional powering method.
- FIG. 19 (a) is a diagram showing a coating step in the second conventional electrodeposition method.
- FIG. 19 (b) is an exposure step
- FIG. 19 (c) is a development step
- FIG. 19 (d) is an electrolysis step
- FIG. 19 (e) is a stripping step. is there.
- FIG. 1 schematically shows a first manufacturing method according to the present invention.
- an opaque conductive layer 30 is formed on a transparent substrate 20 by patterning it into a desired shape.
- a photolithography method and an etching method which are often used in the LSI field, are used. By using these methods, high-precision patterns can be formed at the micron level.
- borosilicate glass having a thickness of 0.4 mm was used as the transparent substrate 20.
- the lower layer (transparent substrate 20 side) is a chromium (Cr) film with a thickness of 0.05 / xm
- the upper layer is a gold (Au) film with a thickness of 0.2 / m.
- the conductive layer 30 was used.
- the lower and upper layers of the opaque conductive layer 30 were formed by a sputtering method, which is a kind of vacuum film forming method.
- photolithography and etching methods are used. A pattern was formed in which a circular pattern having a diameter of 20 ⁇ m was removed by etching at intervals of 40 ⁇ m (pitch).
- a photosensitive insoluble material 40 is formed with a desired thickness on one surface of the transparent substrate 20 on which the opaque conductive layer 30 is formed.
- a negative resist THB-130N (trade name) manufactured by JSR Corporation was used as the photosensitive insoluble material 40, and the photosensitive insoluble material was formed to a thickness of 60 ⁇ m using a spin coating method.
- the spin coating method was performed at a rotation speed of 100 rpm and a processing time of 10 seconds.
- UV ultraviolet light
- the photosensitive insoluble material 40 was exposed at an exposure amount of 450 mJZ cm 2 .
- the photosensitive insoluble material 40 is exposed according to the pattern of the opaque conductive layer 30.
- a pattern is formed in which a circle having a diameter of 20 / Zm is removed at intervals of 40 ⁇ m.
- back exposure A method of exposing a photosensitive insoluble material formed on a substrate from the photosensitive insoluble material side is called front exposure.
- the photosensitive insoluble material 40 is a material in which only the exposed portions are insoluble. Therefore, if development is performed after the exposure step shown in FIG. 1 (c), the unexposed portions of the photosensitive insoluble material 40 are removed, and a resist 50 as shown in FIG. 1 (d) is formed. .
- the development was carried out using a dedicated developing solution for negative resist THB-130N (trade name) manufactured by JSR Corporation at a liquid temperature of 40 ° C. for 2 minutes.
- the resist 50 has a shape corresponding to the pattern of the opaque conductive layer 30.
- the resist 50 has a shape close to a circular cylinder with a bottom surface (the transparent substrate 20 side) having a diameter of 20 / xm, a top surface slightly smaller than the bottom surface, and a height of 60 ⁇ m. It is considered that the reason why the resist 50 does not become a perfect cylinder is that the ultraviolet light causes a diffraction phenomenon at the end of the opaque conductive layer 30 and wraps around the inside. Another reason that the resist 50 does not become a perfect cylinder is that the exposure amount of ultraviolet light is reduced as the resist 50 approaches the upper surface, and the photosensitive insoluble material 40 is easily developed. Can be
- Electrode method is a method of forming a structure by depositing a plating material on an electrode surface by an electrolytic plating method.
- a plating material is deposited on the opaque conductive film 30 by using the opaque conductive layer 30 as an electrode of an electrolysis method. Since no plating material is deposited on the resist 50 part, Thus, a hole structure 10 having a through hole 100 having the same internal shape as the resist 50 is formed.
- a pore structure with a thickness of 50 ⁇ made of Ni is formed by a nickel (Ni) electrodeposition method.
- the Ni electrodeposition treatment was carried out for 5 hours at a liquid temperature of 50 ° C. and a current density of l AZ dm 2 by using a sulfamic acid Ni plating.
- the opaque conductive layer 30 s serves both as an exposure mask for back exposure and as an electrode for an electrodeposition method.
- the pore structure 10 made of Ni was manufactured by the Ni electrodeposition method, but the material is not limited to Ni. Since the electrodeposition method is a kind of the electrolytic plating method, the above-described pore structure can be manufactured using any material that can be deposited by the electrolytic plating method. For example, Cu, Co, Sn, Zn, Au, Pt, Ag, Pb, and alloys containing these materials are examples of materials that can be electrolytically plated in addition to Ni. Can be
- the resist 50, the opaque conductive layer 30 and the transparent substrate 20 were removed, and the hole structure 10 was completed.
- the resist 41 was dissolved and removed with an aqueous solution of 10% hydroxide (KOH) at 50 ° C, and the opaque conductive layer 30 and the transparent substrate 20 were mechanically removed. .
- FIG. 2A is a cross-sectional view of the hole structure 10
- FIG. 2B is a perspective view of the hole structure.
- the through hole 100 of the hole structure 10 has a first opening (upper layer side of the photosensitive insoluble material 40) and a second opening having a size larger than the first opening. It has an opening (on the opaque conductive layer 30 side).
- the area of the first opening is si and the area of the second opening is s 2.
- the size of the opening is defined as the diameter of a circle inscribed in the hole shape seen on the surface of the hole structure.
- the hole structure 10 is defined as the size of the first opening. Dl is 18 ⁇ m (circular), the size of the second opening d 2 is 20 ⁇ m (circular), the depth t is 50 ⁇ , and the angle 0 is 1.15 °.
- Hole 100 was opened.
- the ratio (s2Zsl) of the area s1 of the first opening to the area s2 of the second opening is 1.11, and the pitch b of the through holes 100 is 40Xm. there were.
- the size d 2 of the second opening of the through hole is set to 50 / xm or less and in the range of 2 ⁇ , and the depth t of the through hole is further set to:
- the range can be set longer than d 2 and smaller than 5.5 xd 2.
- the ratio (s 2 / s 1) of the area of the first opening to the area of the second opening of the through hole can be set to a value of 1 or more and 9 or less.
- the angle 0 of the through hole can be set in a range of 0 ° or more and 12 ° or less.
- the tip of the resist becomes narrower due to the above-mentioned diffraction phenomenon and the like.
- the angle formed by the inner wall of the through hole of the hole structure according to the present invention does not become larger than 12 °, and the pitch b between the through holes is set to 2 X d 2 or less. Can also be set.
- the size of the opening of the through hole (for example, d 2) is set to 60 im or less. Can not.
- the depth of the through hole is set to be equal to or larger than the size of the opening of the through hole.
- the hole structure having such characteristics can be manufactured for the first time by the manufacturing method using the back exposure and the electrode method described above.
- FIGS. 4A and 4B show another hole structure 11 manufactured by the above-described first manufacturing method and a register 51 for manufacturing the hole structure 11.
- FIG. 4B shows the register 51 after the development step and before the power supply step, and corresponds to the state of FIG. 1D described above.
- the size dl of the first opening is 7.5 ⁇ m (circular)
- the size d 2 of the second opening is 8 ⁇ (circular)
- the depth t is 2
- the ratio (s 2 Z si) of the area si of the first opening to the area s 2 of the second opening (s 2 Z si) is 1.14
- the pitch b of the through holes 100 is 12 ⁇ .
- the width w serving as the wall between the through holes 101 was 4 ⁇ m.
- the size of the second opening d2 of the through hole 101 is smaller than that of the hole structure 10 shown in FIG.
- the pitch b of the hole 101 was narrowed.
- the shape of the hole structure 11 is based on the setting range of the size d2 of the second opening (50 m or less and 2 ⁇ or more) and the setting range of the depth t (d2 Above and smaller than 5.5 d 2), the setting range of the area ratio (s 2 si) (1 or more and 9 or less), the setting range of the angle 0 (0 ° or more and 12 ° or less), and the pitch It satisfies all the setting ranges of b (2 xd 2 or less).
- the pitch b of the hole structure is No matter how small the size dl of the first opening of the through hole is, it will be more than twice the depth t of the through hole.
- the pitch between the through holes can be set irrespective of the depth t of the through hole 101. Therefore, in the first manufacturing method according to the present invention, the pitch b between the through holes can be set very small as compared with the conventional first electrode method.
- FIGS. 5 (a) and 5 (b) show another pore structure 12 produced by the above-described first production method and a register 52 for producing the pore structure 12.
- FIG. 5B shows the register 51 after the development step and before the power supply step, and corresponds to the state shown in FIG. 1D.
- the size d 1 of the first opening is 2 ⁇ m (circular)
- the size d 2 of the second opening is 20 ⁇ (circular)
- the depth t is 10
- a through hole 102 at 0 m and an angle 0 of 5.14 ° was drilled.
- the pitch b between the through holes 102 was 80 ⁇ m.
- the resist 52 has a circular shape with a bottom surface of 20 ⁇ and a pointed conical shape with a height of 110 ⁇ . As described above, when the resist is set to be high, the upper surface is formed thinner than the lower surface. Finally, the end of the registry will end up with a pointed shape.
- the resist 52 is observed in detail, it can be seen that the resist 52 is formed almost vertically up to a height of about 1 ⁇ 2 (h). Thus, in our experiments, the resist was nearly up to half the height of the resist formed by the block exposure. It was found to be formed vertically.
- the shape of the hole structure 12 is determined by the setting range of the size d 2 of the second opening (50 m or less and 2 ⁇ m or more) and the setting range of the depth t (d 2 or more). And less than 5.5 xd 2), the setting range of the angle ((0 ° or more and 12 ° or less), and the setting range of the pitch b (2 xd 2 or less) are all satisfied.
- the pore structure 12 is made of a 100 / xm thick Ni by extending the treatment time of the electrolysis process from the state shown in FIG. 5 (b) to 10 hours. Is formed. Other conditions are the same as in Fig. 1 (e). Thereafter, the resist 52, the opaque conductive layer 32 and the transparent substrate 22 were removed to complete the hole structure 12.
- the size d1 of the first opening of the through hole 102 is 2 ⁇ , and the size d2 of the second opening is 20 zm.
- the through hole 102 accurately transfers the shape of the register 52 shown in FIG. 5 (b) by an electro-deposition method. If the repair time of the power supply process is set to be longer, and the thickness of the hole structure 12 is set to 110 / zm or more, the hole will be buried, and the through hole 102 may be opened. I can't do it. That is, in this case, the depth t of the through hole cannot be set to 5.5 ⁇ d 2 or more.
- the first manufacturing method is particularly effective in the case where the depth t of the through hole is less than 5 ⁇ d 2.
- the second manufacturing method according to the present invention it is possible to further increase the depth t of the through hole.
- the second manufacturing method according to the present application will be described later.
- FIG. 6 shows a cross-sectional view of still another hole structure 13 manufactured by the above-described first manufacturing method.
- the size dl of the first opening is 20 m (circular)
- the size d 2 of the second opening is 20 ⁇ (circular)
- the depth t is 30 ⁇ m.
- a through-hole 103 with ⁇ m and an angle 0 of 0 ° was made.
- the ratio (s 2 / s 1) of the area s 1 of the first opening to the area s 2 of the second opening (s 2 / s 1) is 1.00
- the pitch b of the through holes 100 is 80 ⁇ . there were.
- Each of the shapes of the hole structures 13 is based on the setting range of the size d 2 of the second opening (50 m or less and 2 // m or more) and the setting range of the depth t (d 2 or more and 5.5 xd 2), area ratio (s 2 s 1) setting range (1 or more and 9 or less), angle 0 setting range (0 ° or more and 12 ° or less), and pitch All the setting ranges of b (2 xd 2 or less) are satisfied.
- the pore structure 13 is obtained by extending the treatment time of the electrolysis step to 3 hours, thereby forming a pore structure 13 made of Ni with a thickness of 30 / xm. Other conditions are the same as in the case of Fig. 1 (e).
- the size d1 of the first opening of the through hole 103 and the size d2 of the second opening are both 20 ⁇ .
- the through-hole could be formed in an internal shape that was perpendicular to the surface of the hole structure 13 without any taper.
- a through hole having a vertically standing internal shape without a taper angle could be formed.
- the size of the hole was A through hole with the same shape could be opened.
- the depth t of the through hole 13 in the hole structure 13 shown in FIG. 6 is 30 ⁇ m, but if the thickness of the hole structure is further reduced, a shallower through hole can be opened. Can also.
- the conventional manufacturing method according to the present invention can be used instead of the first manufacturing method according to the present invention.
- the present invention is particularly effective when the depth t is 1.5 Xd 2 or more. Therefore, when the first manufacturing method according to the present invention is used, the depth t of the through hole is particularly preferably in the range of 1.5 ⁇ d 2 or more and 5 ⁇ d 2 or less.
- FIG. 7 shows a cross-sectional view of still another hole structure 14 manufactured by the first manufacturing method described above.
- the size dl of the first opening is 9 ⁇ (square)
- the size d 2 of the second opening is 10 / im (square)
- the depth t is 40 / A through hole 104 with zm and an angle 0 of 0.72 ° was made.
- the ratio (s 2 / si) of the area s 1 of the first opening to the area s 2 of the second opening is 1.23
- the pitch b of the through holes 100 is 20 ⁇ .
- Each of the shapes of the hole structure 14 has a setting range of the size d 2 of the second opening (50 ⁇ m or less and 2 ⁇ m or more) and a setting range of the depth t (d 2 Above, less than 5.5 X d 2), the area ratio (s 2 Z sl) setting range (1 or more and 9 or less), the angle ⁇ setting range (0 ° or more and 12 ° or less), And the setting range of pitch b (2 xd2 or less) is all satisfied.
- the shape of the register 54 (not shown) for manufacturing the hole structure 14 shown in FIG. 7 is a shape close to a prism.
- An electrode process (corresponding to Fig. 1 (e)) was performed using a resist 54 close to such a prism to form a pore structure 14 made of Ni with a thickness of 40 ⁇ .
- a through hole having an opening other than a circular or elliptical shape, which cannot be achieved by the machining method using a drill is formed. It becomes possible to empty.
- FIG. 7 shows a square opening, the opening is not limited to a square.
- the opening may be a polygon such as a regular triangle, a triangle, a rectangle, a diamond, a rectangle, a regular pentagon, a pentagon, a regular hexagon, a hexagon, and a star.
- the first half of the second manufacturing method is shown in FIG. 8, and the second half is shown in FIG. Note that the first half of the process is the same as the above-described first manufacturing method.
- a first opaque conductive layer 130 is formed on a transparent substrate 120 by patterning it into a desired shape.
- the patterning method, the transparent substrate 120, and the opaque conductive layer 130 are the same as those in the first manufacturing method.
- a pattern in which a circular pattern having a diameter of 3 ⁇ m was removed by etching at an 8 m pitch was formed by the photolithography method and the etching method.
- the first photosensitive insoluble material 140 is placed on one surface of the transparent substrate 120 on which the first opaque conductive layer 130 is formed. It is formed with a desired thickness.
- the photosensitive insoluble material is the same as in the first production method. Here, it was formed to have a thickness of 12 / Xm by using a spin coating method.
- the conditions of the spin coating method were as follows: the number of revolutions was 500 rpm, and the processing time was 10 seconds.
- UV light ultraviolet light
- the photosensitive insoluble material 140 was exposed at an exposure amount of 300 mJZ cm 2 .
- the photosensitive insoluble material 140 is exposed according to the pattern of the transparent conductive layer 140.
- a pattern is formed in which a circle having a diameter of 3 zm is removed at intervals of 8 ⁇ m.
- the photosensitive insoluble material 140 refers to a material in which only the exposed portions are insoluble. Therefore, if development is performed after the exposure step shown in FIG. 8 (c), the unexposed portions of the photosensitive insoluble material 140 are removed, and the resist 150 shown in FIG. 8 (d) is formed. Is done. Here, the image was developed for 1 minute at a liquid temperature of 40 ° C. using a special developer for negative resist TH B-130N (trade name) manufactured by JSR Corporation.
- the resist 150 has a shape corresponding to the pattern of the first opaque conductive layer 130. Therefore, the resist 150 has a circular shape with a bottom surface (transparent substrate 120 side) of 3 ⁇ m in diameter, a circular shape with an upper surface slightly smaller than the bottom surface, and a nearly cylindrical shape with a height of 12 m. .
- the reason why the register 150 does not become a perfect cylinder is as described above.
- a first structural portion 110 is formed on the first opaque conductive layer 130 by an electrolysis method.
- the first structure portion 110 made of Ni and having a thickness of 10 ⁇ was formed by the Ni electrodeposition method.
- the Ni electrodeposition treatment was performed for 1 hour at a liquid temperature of 50 ° C. and a current density of l AZ dm 2 using Ni sulfite acid plating.
- the opaque conductive layer 130 serves both as an exposure mask for back exposure and as an electrode for an electrolysis method.
- the register 150 is removed.
- the resist 150 was dissolved and removed with a 10% aqueous hydroxide (KOH) solution at 50 ° C.
- KOH a 10% aqueous hydroxide
- the hole 111 penetrating to the transparent substrate 120 is opened in the first structural part 110.
- the size dl, of the opening above the hole 111 is 2.5 ⁇ , and the depth tl force S l O iz m (because the thickness of the opaque conductive layer 130 is extremely small. Omitted.)
- a second opaque conductive layer 230 is formed on the first structure 110.
- the second opaque conductive layer 230 need not necessarily have opacity.
- the lower layer (the first structure 110 side) is composed of a chromium (Cr) film with a thickness of 0.03 ⁇
- the upper layer is composed of a gold (Au) film with a thickness of 0.1 / zm.
- a second opaque conductive layer 230 having a laminated structure to be used was used.
- the lower layer and the upper layer of the second opaque conductive layer 230 were formed by sputtering, which is a kind of vacuum film forming method.
- the second conductive layer 230 In the step of forming the second conductive layer 230, it is not possible to form a film on the transparent substrate 120 inside the first hole 111 through the first hole 111. Did not. This is because the depth tl ( ⁇ ⁇ ) is larger than the size dl '(2.5 ⁇ m) of the first opening of the first hole 1 1 1 It is considered that the conductive layer 230 could not enter. According to our experiments, when the depth t 1 is 1.5 times or more deeper than the size d 1 ′ of the first opening of the first hole 1 1 1, the transparent substrate 1 20 It has been confirmed that no film is formed on the substrate.
- the transparent substrate 1 In some cases, film formation on 20 is not performed. Note that it is easy to form a hole that is deeper than the first opening by the steps shown in FIGS. 8 (a) to 8 (e). Further, the second opaque conductive layer 230 shown in FIG. 9B serves as an electrode in an electrode process described later. However, if the first structure 110 itself can serve as an electrode, the second opaque conductive layer 230 need not necessarily be formed. Next, as shown in FIG. 9 (c), the second photosensitive insoluble material 240 is coated with a desired thickness on one surface side on which the second opaque conductive layer 230 is formed. Form.
- the second photosensitive insoluble material 240 enters the inside of the hole 111 of the first structure 110.
- a negative resist THB-130N (trade name) manufactured by JSR Corporation is used as the second photosensitive insoluble material 240, and the second opaque conductive material is formed by spin coating. It was formed on the layer 230 with a thickness of 12 m.
- the spin coating conditions were a rotation speed of 500 rpm and a processing time of 10 seconds.
- UV ultraviolet light
- the second photosensitive insoluble material 240 is partially exposed through the hole 111 because the first structure 110 serves as an exposure mask.
- the second photosensitive insoluble material 240 was exposed at an exposure amount of 400 mj Z cm 2 .
- the second photosensitive insoluble material 240 is a material in which only the exposed portions are insoluble. Therefore, if development is performed after the exposure step shown in FIG. 9 (c), the unexposed portion of the second photosensitive insoluble material 240 is removed, and the resist 25 shown in FIG. 9 (d) is removed.
- a resist 250 having a shape close to a cylinder was formed at the position where the hole 111 was present.
- the height of the resist 250 was from 12 / zm to the second opaque conductive layer 230.
- the development was carried out using a special developing solution for negative resist THB-130N (trade name) manufactured by JSR Corporation at a liquid temperature of 40 ° C for 1 minute.
- a second structural part 210 is formed on the second opaque conductive layer 230 by an electrolysis method.
- the second structure portion 210 of Ni having a thickness of 10 was formed by the Ni electrodeposition method.
- the second opaque conductive layer 230 has an upper layer made of Au and a lower layer made of Cr, the second structural portion 210 made of Ni is formed on the Au film. Since the Au film is an inert material and has excellent conductivity, the Ni electrode on the Au film was very good. Therefore, the second structure portion 210 made of Ni could be formed very tightly with the Au film. Further, since the lower layer of the second opaque conductive layer 230 is composed of a Cr film, the Cr film functions as a bonding material between the first structural portion 110 and the upper Au film. You are. Therefore, the first structural part 110 and the second structural part 210 could be strongly adhered to each other. As described above, the second opaque conductive layer 230 functions as an adhesion layer. Finally, as shown in FIG.
- the resist 250 By removing the bright conductive layer 130 and the transparent substrate 120, the hole structure 15 of the present invention is completed.
- the first opaque conductive layer 130 need not always be removed.
- the resist 250 is first dissolved and removed with a 10% aqueous solution of potassium hydroxide (KOH) at 50 ° C, then the transparent substrate 120 is mechanically removed, and finally, The first opaque conductive layer 130 was dissolved and removed with an acidic etching solution.
- KOH potassium hydroxide
- the size dl of the first opening is 2.0 ⁇ m (circular), and the size d2 of the second opening is 3 ⁇ m ( (Circular), a hole structure 15 having a through hole 105 with a depth t of 20 m (the thickness of the second opaque conductive layer 230 is omitted because it is extremely small) is to be manufactured.
- the first structure 110 and the second structure 210 made of Ni were manufactured by the Ni electrodeposition method, but the material is limited to Ni. Not something. Since the electrodeposition method is a kind of the electrolytic plating method, the above-described pore structure can be manufactured using any material that can be deposited by the electrolytic plating method. For example, Cu, Co, Sn, Zn, Au, Pt, Ag, Pb and alloys containing these materials are examples of materials that can be electrolytically plated in addition to Ni. Can be
- FIGS. 8 and 9 show an example in which the porous structure 15 is manufactured by stacking two structural parts (the first structural part 110 and the second structural part 210). However, by repeating the above-described steps, it is also possible to configure a pore structure composed of three or more structural parts.
- n-th structure 450 is formed on the (n ⁇ 1) -th structure 310. It is assumed that up to the (n-1) th structural part 310 shown in FIG. 10A is made by the manufacturing method according to the present invention.
- an n-th conductive layer 430 is formed on the (n ⁇ 1) -th structural portion 310.
- the step of forming the n-th conductive layer 4330 no film is formed on the base transparent substrate (not shown) through the hole 311. This is because the hole 311 is composed of a structural part composed of (n-1) layers, and its depth is sufficiently large compared to the size of the opening.
- the n-th photosensitive insoluble material 44 having a desired thickness is formed on one surface side on which the n-th conductive layer 430 is formed. Form a 0.
- the n-th photosensitive insoluble material 440 enters the inside of the hole 311.
- UV ultraviolet rays
- the n-th conductive layer 430 is not formed (from the lower side in the figure).
- Ultraviolet light is transmitted through the underlying transparent substrate (not shown) to expose the nth photosensitive insoluble material 440.
- the n-th photosensitive insoluble material 4440 is partially exposed through the hole 311 because the (n-1) th structural part serves as an exposure mask.
- FIG. 10D if development is performed after the exposure step, a patterned resist 450 can be formed.
- the register 450 is formed at the position where the hole 311 has just existed.
- the n-th structural portion 410 is formed on the n-th conductive layer 430 by an electrodeposition method.
- the stacking range is six layers or less.
- the resist formed by the back exposure has no inclination on the outer surface of the resist until about 1/2 of its height. Therefore, if structures up to half the height of the formed resist are stacked, the penetration angle of the inner wall is almost 0 °. Holes can be drilled.
- the depth t of the through hole can be manufactured to a depth of d2 (transparent substrate side) XI 5 or less, which is the size of the opening on the lower side of the hole structure. It has become possible.
- FIG. 11 shows an example in which the hole structure according to the present invention is used as a nozzle of a fluid ejection device.
- reference numeral 1101 denotes a nozzle for an ink jet head of an ink jet printer
- 1102 denotes a chamber of the ink jet head
- 1103 denotes an ejected ink. Is shown.
- the hole structure manufactured by the first manufacturing method described above was used for the 1101 nozzle.
- Other fluid ejection devices include a nozzle for a dispenser or a nozzle for a fuel ejection device.
- FIG. 12 is an example in which the hole structure according to the present invention is used for a fluid stirring device.
- the fluid flowing from left to right in the figure is stirred by disposing the stirring member 122 in the flow path 1201.
- a fluid such as a liquid or a gas
- the stirring member 122 was used as the stirring member 122.
- FIG. 13 is an example in which the hole structure according to the present invention is used for components such as a timepiece and a micromachine.
- the weight of the gear 1301 itself is reduced by providing many through holes in the gear 1301. In this way, it is possible to reduce the weight of very small components such as watches and micromachines while maintaining rigidity.
- Fig. 14 shows the use of the hole structure according to the present invention for optical components and electronic components. This is an example.
- the linearity of the light L after passing is improved by the minute and deep through holes provided in the optical component 1441.
- the interval and the pitch between the through holes can be reduced, so that the aperture ratio of the optical component and the electronic component can be increased. By increasing the aperture ratio, light and electrons can be used efficiently.
- FIG. 15 shows an example in which the hole structure according to the present invention is used for a magnetic component.
- reference numeral 1502 denotes a porcelain part using NiFe as an electrode layer.
- 1501 indicates a magnet
- 1503 indicates a magnetic material.
- FIG. 16 shows an example in which the hole structure according to the present invention is used for a laser processing mask.
- LB is a laser beam
- 1601 is a mask for laser processing
- 1602 is a material to be processed.
- the hole structure according to the present invention makes it possible to produce an ultra-fine laser processing mask.
- FIG. 17 shows an example in which the pore structure according to the present invention is used for a filter 1701.
- a separation device that separates gas and liquid such that only gas passes from the final letter 1701 can be made.
- the finalizer 1701 can be used for an ink cartridge of an ink printer.
- the filter 1701 is used as an air port (air communication port)
- the filter 1702 is used as an ink chamber
- ink is sent from the ink chamber 1702 to the 1703. I do.
- the filter 1701 has a negative pressure inside the ink chamber 1702. It serves to send air in so as not to leak and to prevent ink from leaking out.
- the hole structure according to the present invention can also be used as a sliding part for a spinning nozzle for chemical fiber. As described above, it is considered that the pore structure according to the present invention has a very large use value.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Textile Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001569442A JP4497779B2 (ja) | 2000-03-22 | 2001-03-22 | 孔構造体及び孔構造体製造方法 |
EP01917489A EP1199382A4 (en) | 2000-03-22 | 2001-03-22 | HOLES STRUCTURE AND MANUFACTURING PROCEDURE |
AU44556/01A AU4455601A (en) | 2000-03-22 | 2001-03-22 | Hole structure and production method for hole structure |
KR1020017014948A KR20020000813A (ko) | 2000-03-22 | 2001-03-22 | 구멍 구조체 및 구멍 구조체의 제조 방법 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-79829 | 2000-03-22 | ||
JP2000079829 | 2000-03-22 | ||
JP2001037875 | 2001-02-15 | ||
JP2001-37875 | 2001-02-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001071065A1 true WO2001071065A1 (fr) | 2001-09-27 |
Family
ID=26588041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/002305 WO2001071065A1 (fr) | 2000-03-22 | 2001-03-22 | Structure à trous et procédé de fabrication |
Country Status (7)
Country | Link |
---|---|
US (1) | US20020157956A1 (ja) |
EP (1) | EP1199382A4 (ja) |
JP (1) | JP4497779B2 (ja) |
KR (1) | KR20020000813A (ja) |
CN (1) | CN1298893C (ja) |
AU (1) | AU4455601A (ja) |
WO (1) | WO2001071065A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006016654A (ja) * | 2004-06-30 | 2006-01-19 | Kuraray Co Ltd | 貫通型金属構造体の製造方法 |
JP2011195910A (ja) * | 2010-03-19 | 2011-10-06 | Seiko Instruments Inc | 電鋳型とその製造方法 |
JP2015527481A (ja) * | 2012-06-11 | 2015-09-17 | スタムフォード・ディバイセズ・リミテッド | ネブライザのための開口板を製造する方法 |
US10279357B2 (en) | 2014-05-23 | 2019-05-07 | Stamford Devices Limited | Method for producing an aperture plate |
US10508353B2 (en) | 2010-12-28 | 2019-12-17 | Stamford Devices Limited | Photodefined aperture plate and method for producing the same |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2356684A (en) * | 1999-11-24 | 2001-05-30 | Lorenzo Battisti | Boundary layer control using electroformed microporous material |
DE10164214A1 (de) * | 2001-12-31 | 2003-07-31 | Schwerionenforsch Gmbh | Metallmembranfilter und Verfahren sowie Vorrichtung zur Herstellung desselben |
JP3723201B1 (ja) * | 2004-10-18 | 2005-12-07 | 独立行政法人食品総合研究所 | 貫通孔を有する金属製基板を用いたマイクロスフィアの製造方法 |
US9975136B2 (en) * | 2011-06-08 | 2018-05-22 | Pari Pharma Gmbh | Aerosol generator |
JP5811275B2 (ja) * | 2013-02-26 | 2015-11-11 | 三菱レイヨン株式会社 | 紡糸ノズル及び繊維集合体の製造方法 |
EP2886185A1 (en) | 2013-12-20 | 2015-06-24 | Activaero GmbH | Perforated membrane and process for its preparation |
CN105696093B (zh) * | 2016-02-02 | 2017-11-07 | 上海环芯电子科技有限公司 | 超细异形喷丝孔的制造方法 |
US20200087808A1 (en) * | 2016-12-23 | 2020-03-19 | 3M Innovative Properties Company | Method of electroforming microstructured articles |
US11380557B2 (en) | 2017-06-05 | 2022-07-05 | Applied Materials, Inc. | Apparatus and method for gas delivery in semiconductor process chambers |
DE102018203065A1 (de) * | 2018-03-01 | 2019-09-05 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Injektors |
KR102253547B1 (ko) * | 2018-11-29 | 2021-05-18 | 울산과학기술원 | 무색 투명 반도체 기판 및 이의 제조방법 |
WO2020111422A1 (ko) * | 2018-11-29 | 2020-06-04 | 울산과학기술원 | 무색 투명 반도체 기판 및 이의 제조방법 |
KR102509612B1 (ko) * | 2021-02-25 | 2023-03-14 | 울산과학기술원 | 양면 투광성 향상을 위한 투명 반도체 기판 및 그 제조방법 |
WO2022200151A1 (en) | 2021-03-22 | 2022-09-29 | Stamford Devices Limited | An aerosol generator core |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5055163A (en) * | 1988-12-17 | 1991-10-08 | Kernforschungszentrum Karlsruhe Gmbh | Process for producing a two-dimensionally extending metallic microstructure body with a multitude of minute openings and a tool suitable for this purpose |
WO1997046390A1 (fr) * | 1996-06-04 | 1997-12-11 | Citizen Watch Co., Ltd. | Tete a jet d'encre et son procede de fabrication |
JPH11138827A (ja) * | 1997-11-10 | 1999-05-25 | Citizen Watch Co Ltd | 微細部品の製造方法 |
JPH11172487A (ja) * | 1997-12-05 | 1999-06-29 | Citizen Watch Co Ltd | 微細電鋳部品の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2828625C2 (de) * | 1978-06-29 | 1980-06-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur galvanoplastischen Herstellung von Präzisionsflachteilen |
US5190653A (en) * | 1990-10-30 | 1993-03-02 | Kraft General Foods, Inc. | Coffee brewer filtration device |
US6179978B1 (en) * | 1999-02-12 | 2001-01-30 | Eastman Kodak Company | Mandrel for forming a nozzle plate having a non-wetting surface of uniform thickness and an orifice wall of tapered contour, and method of making the mandrel |
-
2001
- 2001-03-22 US US09/959,909 patent/US20020157956A1/en not_active Abandoned
- 2001-03-22 CN CNB018006167A patent/CN1298893C/zh not_active Expired - Fee Related
- 2001-03-22 AU AU44556/01A patent/AU4455601A/en not_active Abandoned
- 2001-03-22 KR KR1020017014948A patent/KR20020000813A/ko not_active Application Discontinuation
- 2001-03-22 JP JP2001569442A patent/JP4497779B2/ja not_active Expired - Fee Related
- 2001-03-22 WO PCT/JP2001/002305 patent/WO2001071065A1/ja active Application Filing
- 2001-03-22 EP EP01917489A patent/EP1199382A4/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5055163A (en) * | 1988-12-17 | 1991-10-08 | Kernforschungszentrum Karlsruhe Gmbh | Process for producing a two-dimensionally extending metallic microstructure body with a multitude of minute openings and a tool suitable for this purpose |
WO1997046390A1 (fr) * | 1996-06-04 | 1997-12-11 | Citizen Watch Co., Ltd. | Tete a jet d'encre et son procede de fabrication |
JPH11138827A (ja) * | 1997-11-10 | 1999-05-25 | Citizen Watch Co Ltd | 微細部品の製造方法 |
JPH11172487A (ja) * | 1997-12-05 | 1999-06-29 | Citizen Watch Co Ltd | 微細電鋳部品の製造方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006016654A (ja) * | 2004-06-30 | 2006-01-19 | Kuraray Co Ltd | 貫通型金属構造体の製造方法 |
JP2011195910A (ja) * | 2010-03-19 | 2011-10-06 | Seiko Instruments Inc | 電鋳型とその製造方法 |
US11905615B2 (en) | 2010-12-28 | 2024-02-20 | Stamford Devices Limited | Photodefined aperture plate and method for producing the same |
US11389601B2 (en) | 2010-12-28 | 2022-07-19 | Stamford Devices Limited | Photodefined aperture plate and method for producing the same |
US10662543B2 (en) | 2010-12-28 | 2020-05-26 | Stamford Devices Limited | Photodefined aperture plate and method for producing the same |
US10508353B2 (en) | 2010-12-28 | 2019-12-17 | Stamford Devices Limited | Photodefined aperture plate and method for producing the same |
US10512736B2 (en) | 2012-06-11 | 2019-12-24 | Stamford Devices Limited | Aperture plate for a nebulizer |
US9981090B2 (en) | 2012-06-11 | 2018-05-29 | Stamford Devices Limited | Method for producing an aperture plate |
US11679209B2 (en) | 2012-06-11 | 2023-06-20 | Stamford Devices Limited | Aperture plate for a nebulizer |
JP2015527481A (ja) * | 2012-06-11 | 2015-09-17 | スタムフォード・ディバイセズ・リミテッド | ネブライザのための開口板を製造する方法 |
US10279357B2 (en) | 2014-05-23 | 2019-05-07 | Stamford Devices Limited | Method for producing an aperture plate |
US11440030B2 (en) | 2014-05-23 | 2022-09-13 | Stamford Devices Limited | Method for producing an aperture plate |
US11872573B2 (en) | 2014-05-23 | 2024-01-16 | Stamford Devices Limited | Method for producing an aperture plate |
Also Published As
Publication number | Publication date |
---|---|
JP4497779B2 (ja) | 2010-07-07 |
KR20020000813A (ko) | 2002-01-05 |
CN1298893C (zh) | 2007-02-07 |
EP1199382A4 (en) | 2006-10-11 |
EP1199382A1 (en) | 2002-04-24 |
US20020157956A1 (en) | 2002-10-31 |
AU4455601A (en) | 2001-10-03 |
CN1365402A (zh) | 2002-08-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2001071065A1 (fr) | Structure à trous et procédé de fabrication | |
CN102197165B (zh) | 异质liga方法 | |
JP5508420B2 (ja) | Liga‐uv技術によるマルチレベル金属部品の製造方法 | |
JP4996902B2 (ja) | 金属製ふるい材料およびその製造方法 | |
JP2018158150A (ja) | ネブライザのための開口板を製造する方法 | |
JPS59110967A (ja) | 弁素子の製造方法 | |
JP5231769B2 (ja) | 電鋳型、電鋳型の製造方法、時計用部品、および時計 | |
US6350360B1 (en) | Method of fabricating a 3-dimensional tool master | |
JP2012148553A (ja) | 液体吐出ヘッドの製造方法 | |
US7501228B2 (en) | Annular nozzle structure for high density inkjet printheads | |
JP3206246B2 (ja) | 微小穴を有する金属部材の製造方法 | |
JP2002146584A (ja) | 微小形状構造体、ノズル部品、光学部品、表示装置、電鋳元型及びそれらの製造方法 | |
JPH09279366A (ja) | 微細構造部品の製造方法 | |
KR102175093B1 (ko) | 베루누이 구조를 갖는 공기정화용 필터 제작 방법과 그 방법에 의하여 제작된 필터 | |
JP2011131590A (ja) | 液体吐出ヘッドの製造方法及び吐出口部材の製造方法 | |
JP2005274714A (ja) | 孔構造体の製造方法及び孔構造体 | |
JP2004330636A (ja) | インクジェットヘッド用ノズル板の製造方法 | |
JP5097985B2 (ja) | 電鋳型の製造方法、電鋳型及び電鋳部品の製造方法 | |
JPH04323393A (ja) | 透孔を有する電鋳製品並びにその製造方法 | |
JP4674735B2 (ja) | 電鋳メタルの製造方法 | |
JP5000147B2 (ja) | 超音波加工機用の穿孔工具 | |
JP2003001829A (ja) | 孔構造体とその製造方法並びにインクジェットヘッド用ノズル板とその製造方法 | |
JP2002226988A (ja) | 積層構造体とその製造方法 | |
JP2006016654A (ja) | 貫通型金属構造体の製造方法 | |
TW200819558A (en) | Method for carrying out electro-casting metal structure separation by sacrificial layer method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 01800616.7 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 2001 569442 Country of ref document: JP Kind code of ref document: A |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 09959909 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001917489 Country of ref document: EP |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1020017014948 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2001917489 Country of ref document: EP |