WO2000019502A1 - Fourneau vertical et nacelle porte-tranches - Google Patents

Fourneau vertical et nacelle porte-tranches Download PDF

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Publication number
WO2000019502A1
WO2000019502A1 PCT/JP1999/005258 JP9905258W WO0019502A1 WO 2000019502 A1 WO2000019502 A1 WO 2000019502A1 JP 9905258 W JP9905258 W JP 9905258W WO 0019502 A1 WO0019502 A1 WO 0019502A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
support member
boat
vertical
vertical furnace
Prior art date
Application number
PCT/JP1999/005258
Other languages
English (en)
Japanese (ja)
Inventor
Masaki Tsuruki
Takashi Machida
Toshimitsu Miyata
Original Assignee
Hitachi, Ltd.
Hitachi Kokusai Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd., Hitachi Kokusai Electric Co., Ltd. filed Critical Hitachi, Ltd.
Publication of WO2000019502A1 publication Critical patent/WO2000019502A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Definitions

  • the present invention relates to a wafer boat provided in a vertical furnace and a vertical heat treatment apparatus, and particularly to a vertical wafer port provided in a vertical diffusion furnace and a vertical vapor phase growth furnace.
  • BACKGROUND ART-In the process of oxidizing and diffusing semiconductor wafers a large number of semiconductor wafers are loaded on a wafer boat, and the wafer boat is carried into a diffusion furnace to perform a predetermined heat treatment.
  • Vertical boats and horizontal boats are used depending on the type of diffusion furnace.
  • a conventional vertical boat has a structure in which a wafer boat is held at three or four points, a supporting portion for supporting a wafer protrudes in a rod shape from the boat, and a peripheral edge of the wafer and a back surface of the wafer are each a boat support.
  • a boat is used in such a manner that it comes into surface contact with the support part (Japanese Patent Publication No. 1991-1991).
  • a groove slightly thicker than the thickness of the wafer is formed in the boat support, and a wafer boat is used in which the peripheral edge of the wafer and the periphery of the rear surface of the wafer are supported in surface contact.
  • a wafer port is used in which an arc-shaped or ring-shaped support member is provided on a boat support and the peripheral portion of the back surface of the wafer is brought into surface contact and supported (Japanese Patent Laid-Open No. Hei 6-260438). .
  • Disclosure of the invention In the conventional technology for supporting a wafer at points, even if the inside of the wafer is supported, the contact area is limited, so if the diameter of the wafer is large, the stress generated at the supporting position due to its own weight increases, and the yield increases due to an increase in the processing temperature. The stress decreases. As a result, the generated stress easily exceeds the yield stress and slip occurs.
  • a vertical type that comes into contact with the wafer and supports the wafer.
  • the above object is achieved by providing a groove-shaped notch at a position on the upper surface of the support member forming an angle so that the support member does not contact the wafer.
  • Table 1 shows that using a ring-shaped support member, a wafer having a principal surface of ⁇ 00 1 ⁇ of about 3 O cm (12 inches) was inserted with the 1 110> direction aligned with the insertion direction.
  • the graph shows the relationship between slip occurrence position and frequency when heat treatment is performed at 0 ° C, 110 ° C, and 1200 ° C.
  • the slip occurrence position is represented by a central angle of 0 to 45 ° with respect to the wafer insertion direction assuming 1/8 mirror symmetry. From Table 1, it can be seen that the frequency of slip is higher near the central angle of 45 ° than at other positions regardless of the processing temperature.
  • FIG. 1 is a longitudinal sectional view showing a vertical diffusion furnace (vapor phase growth furnace) according to one embodiment of the present invention.
  • FIG. 2 is an overall configuration diagram showing a vertical wafer boat according to one embodiment of the present invention.
  • FIG. 3 is a cross-sectional view taken along line AA ′ of FIG. 1 showing a vertical wafer boat according to one embodiment of the present invention.
  • FIG. 4 is a plan view showing a support member of a vertical wafer boat for describing an embodiment of the present invention.
  • FIG. 5 is a side view showing the shape of the groove of the support member of the vertical wafer boat according to one embodiment of the present invention.
  • FIG. 6 is a plan view showing a support member for a vertical type hubboat according to another embodiment of the present invention.
  • FIG. 7 is a plan view showing a support member of a vertical wafer boat according to still another embodiment of the present invention.
  • FIG. 8 is a plan view showing a support member of a vertical boat boat according to still another embodiment of the present invention.
  • FIG. 9 shows a support member for a vertical wafer boat according to still another embodiment of the present invention.
  • FIG. 10 is a plan view showing a support member of a vertical wafer boat according to still another embodiment of the present invention.
  • FIG. 11 is a plan view showing a support member of a vertical wafer boat according to still another embodiment of the present invention.
  • FIG. 12 is a plan view showing a support member of a vertical wafer boat according to still another embodiment of the present invention.
  • FIG. 13 is a view showing the relationship between the central angle of the groove of the support member of the vertical wafer boat and the stress generated in the wafer according to still another embodiment of the present invention.
  • FIG. 1 is a longitudinal sectional view showing one embodiment of the present invention.
  • a reaction tube installed in a vertical resistance heating furnace 1 has a double structure composed of an outer tube 2 and an inner tube 3, and is held by a gantry 4.
  • the reaction gas is supplied into the inner tube 3 and collected from the outer tube 2.
  • the boat 5 is installed in the inner tube 3, and is inserted and withdrawn from a circular hole 6 provided in the center of the gantry 4.
  • the boat 5 holds wafers 7 at arbitrary intervals in the vertical direction. The wafer 7 is taken in and out of the boat 5 from the boat 3 taken out of the in-tube 3 by the transfer device.
  • FIG. 2 is a view showing the entire configuration of the boat 5, and the boat 5 has a plurality of supports 8, a top plate 51, a bottom plate 52, and a cap 53.
  • FIG. 3 is a cross-sectional view of the boat 5, and is a cross-sectional view taken along line AA ′ in FIG. 1 viewed from a vertical direction.
  • a boat 5 for holding a wafer 7 substantially horizontally therein has a plurality of columns 8 and a plurality of support members 9.
  • the plurality of columns 8 are provided so as to rise substantially vertically around the periphery of the wafer 7 held inside the boat 5. Since the wafer 7 is inserted into the boat 5 in the horizontal direction, the interval between the columns 8 is increased at the insertion portion to secure the insertion space.
  • the support member 9 has an arc shape or a ring shape, and is provided integrally with the column 8 or removably mounted in a groove provided in the column 8.
  • the support member 9 supports the wafer 7 concentrically. That is, in the supported state, the center of the wafer 7 is substantially aligned with the center of the arc or ring of the support member 9 I do. It should be noted that the insertion direction of the arm 7 is installed so as to pass through the center of the support member 9.
  • FIG. 4 shows an example of the support member 9 of this embodiment.
  • the support member 9 has a ring shape, and four grooves 10 are provided on the upper surface of the indicating member 9 in a direction at an angle of 45 ° to the wafer insertion direction at the center of the ring of the support member 9.
  • the lower surface of the ⁇ 0 0 1 ⁇ wafer 7 does not come into contact with the supporting portion 9 in the directions ⁇ 100>, ⁇ 110>, ⁇ 100> and ⁇ 110>. .
  • the groove 10 is a groove having a short sectional shape.
  • the groove 10 may be of any shape as long as it has a depth force S that can prevent the lower surface of the wedge 7 from contacting the upper surface of the support member 9 and may be a concave depression or a hole.
  • FIG. 5 is a side view showing an example of the groove 10.
  • Fig. 5 (a) (with a curvature of the groove having a short cross-sectional shape having a curvature)
  • Fig. 5 (b) (with a chamfer of the corner of a groove with a short cross-section)
  • Figs. Fig. 5 (c) (groove with a cross-sectional shape of a wedge)
  • Fig. 5 (d) (groove with a trapezoidal cross-section)
  • Fig. 5 (e) (curvature at the corner of a groove with a wedge-shaped or trapezoidal cross-section)
  • the same effect can be obtained.
  • the wafer 7 and the support member 9 make point or line contact or a surface contact close to it, so that there is a groove, the wedge is at the end of the notch, and a large stress is generated at the contact of 7 May be. Therefore, it is desirable to provide a curvature at the end or the ridge of the groove or the notch because it has an effect of increasing the contact area with the wafer at the end of the groove or the notch and reducing the stress.
  • Grooves or cuts have the effect of suppressing the occurrence of slip as a result of the support member coming into contact with the swell, resulting in improper stress.
  • the support member It cannot support the wafer. For this reason, the wafer is bent by its own weight in the area, and stress is generated.
  • Figure 13 shows a ring-shaped support member with a groove at a position at 45 ° to the insertion direction of a wafer whose main surface is ⁇ 001 ⁇ of 30 cm (12 inches) size by FEM analysis.
  • the center with the groove width when supported by (The groove width when viewed as an arc).
  • the results of analyzing the circumferential stress generated at the center of the groove of the wafer with the center angle of the groove as a parameter are shown.
  • the stress was expressed as a ratio of the central angle of the groove to 0 °, that is, the stress with no groove.
  • the central angle of the groove or cut should preferably be less than 12 ° which does not exceed 110 ° of the stress generated when the amount of generated stress does not have a groove ⁇ : If possible, the increase in stress will be 1 1 6 ° or less, which can be suppressed to 00 or less, is particularly desirable. In this example, the central angle was set to about 4 °.
  • FIG. 6 shows another example of the support member 9.
  • the support member 9 of the present embodiment has an arc shape with an open front part in the wafer insertion direction so that the transfer device for the wafer 7 can be inserted. Non-uniform wafer support and stress, but with the right width, will not cause any slip.
  • FIG. 7 shows still another example of the support member 9 in which a notch 11 is provided in place of the groove 10.
  • the thickness of the support member can be made smaller than that provided with the groove 10, and as a result, a wafer boat that can load many wafers at the same boat height can be realized.
  • high stress is generated in the narrow part of the notch, but reliability can be secured by appropriate structural design and material selection.
  • FIG. 8 shows still another example of the support member 9. ⁇ To provide a space on the back side in the c-insertion direction so that the c-transfer device can be inserted to the back of the c-cha, it is convex on the outer periphery. Alternatively, the curvature may be increased.
  • FIG. 10 also shows still another example of the support member 9. If the plate thickness is too thin, the rigidity is lost, the wafer cannot be supported, the stress due to contact increases, and slip occurs. However, as the plate thickness increases, the pitch between the grooves for attaching and detaching the support members provided on the columns increases, and the number of wafers that can be loaded on the boat 5 at one time decreases. In addition, the increase in plate thickness increases the weight, which increases the load on the boat support and increases the overall size of the equipment, leading to an increase in cost.
  • the support member 9 has an L-shaped cross section. Inserted into the groove for attaching and detaching the support member W
  • the thickness of the part thinner and increasing the thickness of the other parts, the pitch of the groove for attaching and detaching the support member is not increased, the weight is also suppressed, and the rigidity of the support member 9 is secured. it can.
  • FIG. 11 shows still another example of the support member 9.
  • the support member 9 has an arc shape in front of the wafer insertion direction and an angle between the wafer insertion direction and the center of the arc opening at least in the range of 45 ° to + 45 °, and has the lowest yield stress of the wafer. The position can be prevented from contacting the support member, and the wafer transfer device can be inserted.
  • FIG. 12 shows still another example, in which a support member 9 is formed integrally with a support column 8.
  • the diameter of a wafer is increased and the stress generation by contact with a supporting member when the processing temperature rises can be suppressed, and the contact part of a wafer and a boat at the time of the heat treatment in a vertical diffusion furnace and a vertical vapor phase growth furnace. Can prevent the occurrence of slippage. As a result, the influence of the slip on the device characteristics is eliminated, and a remarkable effect on the device yield can be obtained.

Abstract

Pour éviter les dérappages pouvant sinon se produire lors du traitement thermique d'une tranche de silicium placée dans une nacelle classique d'un fourneau vertical où la tranche est soutenue par son bord périphérique, par contact facial avec un élément porteur courbe, la face dudit élément où repose la tranche est munie d'encoches radiales inclinées de 45° par rapport au sens d'introduction, et telles que l'élément support n'est pas en contact avec la tranche.
PCT/JP1999/005258 1998-09-28 1999-09-27 Fourneau vertical et nacelle porte-tranches WO2000019502A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10/272901 1998-09-28
JP27290198 1998-09-28

Publications (1)

Publication Number Publication Date
WO2000019502A1 true WO2000019502A1 (fr) 2000-04-06

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ID=17520347

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1999/005258 WO2000019502A1 (fr) 1998-09-28 1999-09-27 Fourneau vertical et nacelle porte-tranches

Country Status (2)

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KR (1) KR100424428B1 (fr)
WO (1) WO2000019502A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003060968A1 (fr) * 2001-12-27 2003-07-24 Tokyo Electron Limited Nacelle pour traitement thermique et equipement de traitement thermique vertical
US6799940B2 (en) 2002-12-05 2004-10-05 Tokyo Electron Limited Removable semiconductor wafer susceptor
JP2005072277A (ja) * 2003-08-25 2005-03-17 Shin Etsu Handotai Co Ltd 熱処理用縦型ボート及びその製造方法
JP2006093207A (ja) * 2004-09-21 2006-04-06 Hitachi Kokusai Electric Inc 半導体製造装置
US7077913B2 (en) * 2002-01-17 2006-07-18 Hitachi Kokusai Electric, Inc. Apparatus for fabricating a semiconductor device
WO2008047697A1 (fr) * 2006-10-13 2008-04-24 Sumco Corporation Procédé et dispositif de serrage pour tenir une tranche de silicium
WO2008047752A1 (fr) * 2006-10-16 2008-04-24 Sumco Corporation Procédé de maintien d'une plaquette de silicium, dispositif de serrage pour traitement thermique, et plaquette traitée thermiquement
JP2008130695A (ja) * 2006-11-17 2008-06-05 Bridgestone Corp 熱処理用ホルダー
US11367641B2 (en) * 2019-12-24 2022-06-21 Powertech Technology Inc. Wafer storage device, carrier plate and wafer cassette
WO2023026412A1 (fr) * 2021-08-25 2023-03-02 株式会社Kokusai Electric Outil de support de substrat, appareil de traitement de substrat et procédé de production de dispositif à semi-conducteur

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62245624A (ja) * 1986-04-18 1987-10-26 Hitachi Ltd 縦型処理装置
US5507873A (en) * 1992-11-30 1996-04-16 Toshiba Ceramics Co., Ltd. Vertical boat
JPH08181083A (ja) * 1994-12-20 1996-07-12 Toshiba Ceramics Co Ltd ウエハの支持方法
JPH11106287A (ja) * 1997-10-03 1999-04-20 Super Silicon Kenkyusho:Kk 半導体ウエハ処理方法及び装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214421A (ja) * 1985-03-19 1986-09-24 Toshiba Corp 半導体ウエハ
JPH09139352A (ja) * 1995-11-15 1997-05-27 Nec Corp 縦型炉用ウェーハボート

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62245624A (ja) * 1986-04-18 1987-10-26 Hitachi Ltd 縦型処理装置
US5507873A (en) * 1992-11-30 1996-04-16 Toshiba Ceramics Co., Ltd. Vertical boat
JPH08181083A (ja) * 1994-12-20 1996-07-12 Toshiba Ceramics Co Ltd ウエハの支持方法
JPH11106287A (ja) * 1997-10-03 1999-04-20 Super Silicon Kenkyusho:Kk 半導体ウエハ処理方法及び装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1320604C (zh) * 2001-12-27 2007-06-06 东京毅力科创株式会社 热处理用舟式容器和立式热处理装置
US6966771B2 (en) 2001-12-27 2005-11-22 Tokyo Electron Limited Boat for heat treatment and vertical heat treatment equipment
WO2003060968A1 (fr) * 2001-12-27 2003-07-24 Tokyo Electron Limited Nacelle pour traitement thermique et equipement de traitement thermique vertical
US7077913B2 (en) * 2002-01-17 2006-07-18 Hitachi Kokusai Electric, Inc. Apparatus for fabricating a semiconductor device
US6799940B2 (en) 2002-12-05 2004-10-05 Tokyo Electron Limited Removable semiconductor wafer susceptor
JP2005072277A (ja) * 2003-08-25 2005-03-17 Shin Etsu Handotai Co Ltd 熱処理用縦型ボート及びその製造方法
JP4700309B2 (ja) * 2004-09-21 2011-06-15 株式会社日立国際電気 半導体製造装置およびボート
JP2006093207A (ja) * 2004-09-21 2006-04-06 Hitachi Kokusai Electric Inc 半導体製造装置
WO2008047697A1 (fr) * 2006-10-13 2008-04-24 Sumco Corporation Procédé et dispositif de serrage pour tenir une tranche de silicium
JP2008098518A (ja) * 2006-10-13 2008-04-24 Sumco Corp シリコンウェーハの保持方法および保持治具
WO2008047752A1 (fr) * 2006-10-16 2008-04-24 Sumco Corporation Procédé de maintien d'une plaquette de silicium, dispositif de serrage pour traitement thermique, et plaquette traitée thermiquement
JP2008098589A (ja) * 2006-10-16 2008-04-24 Sumco Corp シリコンウェーハの支持方法、熱処理治具および熱処理ウェーハ
US8067820B2 (en) 2006-10-16 2011-11-29 Sumco Corporation Silocon wafer supporting method, heat treatment jig and heat-treated wafer
JP2008130695A (ja) * 2006-11-17 2008-06-05 Bridgestone Corp 熱処理用ホルダー
US11367641B2 (en) * 2019-12-24 2022-06-21 Powertech Technology Inc. Wafer storage device, carrier plate and wafer cassette
WO2023026412A1 (fr) * 2021-08-25 2023-03-02 株式会社Kokusai Electric Outil de support de substrat, appareil de traitement de substrat et procédé de production de dispositif à semi-conducteur

Also Published As

Publication number Publication date
KR20010075412A (ko) 2001-08-09
KR100424428B1 (ko) 2004-03-24

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