WO2000048244A1 - Dispositif et procédé de traitement thermique de tranches - Google Patents

Dispositif et procédé de traitement thermique de tranches Download PDF

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Publication number
WO2000048244A1
WO2000048244A1 PCT/JP2000/000747 JP0000747W WO0048244A1 WO 2000048244 A1 WO2000048244 A1 WO 2000048244A1 JP 0000747 W JP0000747 W JP 0000747W WO 0048244 A1 WO0048244 A1 WO 0048244A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
heat treatment
support
column
boat
Prior art date
Application number
PCT/JP2000/000747
Other languages
English (en)
Japanese (ja)
Inventor
Masaki Tsuruki
Takashi Machida
Toshimitsu Miyata
Original Assignee
Hitachi, Ltd.
Kokusai Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd., Kokusai Electric Co., Ltd. filed Critical Hitachi, Ltd.
Publication of WO2000048244A1 publication Critical patent/WO2000048244A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support

Definitions

  • Wafer heat treatment apparatus and heat treatment method Wafer heat treatment method
  • the present invention relates to a heat treatment apparatus and a heat treatment method having a wafer boat, and more particularly to a vertical diffusion furnace and a vertical vapor deposition furnace having a vertical wafer boat and a heat treatment method therefor.
  • the present invention relates to a heat treatment apparatus and a heat treatment method having a wafer boat, and more particularly to a vertical diffusion furnace and a vertical vapor deposition furnace having a vertical wafer boat and a heat treatment method therefor.
  • a large number of semiconductor wafers are loaded on a wafer boat, and the wafer boat is directly loaded into a diffusion furnace, where a predetermined heat treatment is performed.
  • a diffusion furnace where a predetermined heat treatment is performed.
  • vertical wafer boats or horizontal wafer boats are used.
  • the conventional vertical wafer boat has a problem that, at a support portion in contact with the wafer, thermal distortion is applied to the wafer due to a difference in heat conduction between the wafer and the support portion of the wafer boat, thereby causing a crystal defect.
  • the wafer boat has a structure that supports wafers at three or four points.
  • a wafer boat force s is used to make contact between the boat support and the support portion (see Japanese Patent Application Laid-Open No. S61-191015).
  • a groove slightly thicker than the thickness of the wafer is formed in the boat support, and a peripheral edge of the wafer and a periphery of the rear face of the wafer are supported in surface contact with the groove.
  • heat transfer from the furnace also occurs at the point of contact with the force-supporting member by radiation or heat transfer, causing unevenness in the temperature distribution of the wafer.
  • the non-uniform temperature distribution of the wafer generates thermal stress on the wafer, causing crystal defects, and also adversely affects the heat treatment, such as making the film thickness non-uniform.
  • the occurrence of such a defective portion near the center of the wafer is greater than that at the outer peripheral portion in terms of product yield and countermeasure cost by 5 '.
  • An object of the present invention is to solve the above-mentioned problems, and to suppress the generation of stress due to the weight of the wafer when the diameter of the wafer is increased and the processing temperature is increased, so that the wafer is less affected by thermal stress.
  • a vertical diffusion furnace and a vertical vapor phase growth furnace Heat treatment apparatus and heat treatment that can prevent the occurrence of slip at the contact portion between the wafer and the wafer boat during heat treatment in the above, eliminate the effect of the slip on device characteristics, and bring about a remarkable effect on the improvement of device yield Is to provide a way.
  • the present invention comprises a plurality of pillars arranged in a longitudinal direction, and a wafer boat for loading a wafer on each of substantially column-shaped pillar support portions provided at predetermined intervals on the pillars.
  • the column in the front row of the wafer boat in the wafer receiving direction has a cross section of the column main body having a substantially bow shape or a substantially partial bow shape. This is a heat treatment device.
  • the present invention includes a wafer boat in which a plurality of columns are arranged in a vertical direction, and wafers are respectively loaded on substantially flat column-shaped column supports provided at predetermined intervals on the columns.
  • the support in the front row of the wafer receiving direction of the wafer boat has a pillar supporting portion provided at a front end of the pillar body in the wafer receiving direction. It is a heat treatment apparatus.
  • ⁇ ⁇ ⁇ the total number of pillars of the boat is three, and ⁇ the contact support position of the pillar support portion of the pillar in the front row in the wafer receiving direction, which is in contact with and supports the lower surface of the wafer, is When heat treatment is performed at a center angle between the contact support position of the column support at the backmost position in the direction and the contact support position near 950 ° C, 100 ° to 135 °, preferably 117 °
  • the present invention is the heat treatment apparatus, wherein the column support portion has a support protrusion, and the support protrusion is supported in point contact with the wafer.
  • the present invention is the heat treatment apparatus, wherein the support member is supported in line contact with the wafer. Further, the present invention is the heat treatment apparatus, wherein the column support section supports the wafer in surface contact.
  • the present invention provides a heat treatment method of performing a predetermined heat treatment on a wafer while supporting the wafer at three points, namely, two points in the front row of the wafer receiving direction and one point at the back of the wafer receiving direction. If the center position of the support position in the front row in the wafer receiving direction and the center position of the backmost support position in the wafer receiving direction is 950 and heat treatment is performed in the vicinity, 100 ° to 135 °, preferably 1 1 1 When the heat treatment is performed in the vicinity of 100 °, the heat treatment is performed at a position of 110 ° to 127 °, preferably 117 °. is there. BRIEF DESCRIPTION OF THE FIGURES
  • FIG. 1 is an explanatory view of the overall configuration of a vertical wafer boat according to a first embodiment.
  • FIG. 2 is an explanatory longitudinal sectional view of a vertical diffusion furnace (vapor phase growth furnace) using the vertical furnace wafer boat of Example 1.
  • FIG. 3 is an explanatory plan view showing a column of the vertical wafer boat of the first embodiment.
  • FIG. 4 is an explanatory diagram showing the relationship between the central angle of wafer support and the generated stress in Example 1.
  • FIG. 5 is an explanatory plan view showing a vertical wafer boat according to a second embodiment.
  • FIG. 6 is an explanatory sectional view showing a vertical wafer boat according to a third embodiment.
  • FIG. 7 is an explanatory sectional view showing a vertical wafer boat according to a fourth embodiment.
  • FIG. 8 is an explanatory cross-sectional view showing a vertical boat of the fifth embodiment.
  • the vertical furnace wafer boat 3 of the present embodiment includes three support columns 4, a top plate 31, a bottom plate 32, a cap 33, and the like.
  • Have. Fig. 2 shows a vertical sectional view of the vertical furnace in use.
  • a reaction tube installed in a vertical resistance heating furnace 11 has a double structure composed of an outer tube 12 and an inner tube 13, and is held by a frame 14. .
  • the reaction gas is supplied into the inner tube 13 and collected from the tube 12.
  • the wafer boat 3 is installed in the inner tube 13, and is inserted and withdrawn from a circular hole 15 provided at the center of the gantry 14.
  • the wafer 2 is held on the wafer boat 3 at an arbitrary interval above and below.
  • the wafer 2 of the wafer boat 3 pulled out from the inner tube 13 is taken in and out by the transfer device.
  • FIG. 3 is a cross-sectional view of the wafer boat 3, which is a cross-sectional view taken along line AA in FIG.
  • the boat 3 supporting the wafer 2 has three columns 4 a, 4 b, and 4 c composed of a column body 40 and a column support 41.
  • the columns 4a, 4b, and 4c are provided so as to stand substantially vertically around the periphery of the ⁇ ⁇ c2.
  • the support 4a which is farthest in the receiving direction of C, is provided so as to face the receiving direction of C, and the supports 4b, 4c in the front row in the wafer receiving direction are provided symmetrically with respect to the wafer receiving direction.
  • the column support portions 41b and 41c are provided at the front end in the receiving direction from the column body portions 40b and 40c, respectively, and extend laterally inward toward the wafer side. It is overhanging.
  • the contact support position for supporting and supporting the lowermost column support portion 41a and the front row column support portion 41b, 41c in contact with the lower surface of the wafer 2 is as follows.
  • the central angle is 110. It is arranged to be ⁇ 127 °, and preferably to 117 °.
  • the central angle is set to 100 ° to 135 °, and more preferably to 117 °.
  • the decomposition shear stress generated in the wafer becomes less than the critical decomposition shear stress, and no slip occurs.
  • the silicon (S i) wafer slip is dominated by twelve slip systems with a slip plane of il 1 ⁇ ⁇ , since the silicon crystal is a single crystal with a face-centered cubic lattice.
  • the shear stress in the slip direction is called the decomposition shear stress.
  • the minimum decomposition shear stress at which slip occurs is called critical decomposition shear stress.
  • Figure 4 shows the ratio of the shear stress of the sample to the critical shear stress at 1 000 ° C.
  • Decomposed shear stress was obtained by calculation using the finite element method. As shown in Fig. 4, the ratio of the decomposed shear stress generated at c and the critical decomposed shear stress at 1000 ° C is minimized at 117 °. When the ratio of the decomposition shear stress to the critical decomposition shear stress at 1000 is less than 1.0, the decomposition shear stress falls below the critical decomposition shear stress.
  • the decomposition shear stress due to its own weight can be lower than the critical decomposition shear stress.
  • the heat treatment temperature is around 950 ° C, it is possible to reduce the decomposition shear stress due to its own weight below the critical decomposition shear stress between about 100 ° and 135 °, and the minimum is 1 1 7 °.
  • the columns 4a, 4b, and 4c bend toward the center of the wafer due to their own weight and the mass of the wafer.
  • the quartz glass when quartz glass is used as a boat material, at a treatment temperature of 1000 or more, the quartz glass exhibits a viscoelastic behavior beyond the strain point. In such a state, the strain increases in proportion to the reciprocal of the viscosity, the stress and the holding time, so that it remains as a permanent deformation after unloading.
  • the deformation due to the bending stress due to the radial deflection of the columns 4a, 4b, and 4c remains as the deflection of the columns 4a, 4b, and 4c, and is accumulated by repeated heat treatment, and finally holds the wafer 2.
  • the deformation becomes impossible.
  • the increase of the second moment of area causes the increase of the cross-sectional area.
  • the support 4a at the innermost position in the receiving direction in the present embodiment has a substantially trapezoidal or substantially circular cross-sectional shape, and has a support portion 41a at the center of the support body 4'0a.
  • the supporting columns 4b and 4c in the front row of the receiving direction have a substantially trapezoidal or substantially arc-shaped cross-sectional shape like the supporting column 4a at the back, and the supporting portions 41b and 41c are columns.
  • the cross-sectional shapes of the columns 4b and 4c are set to be substantially arcuate or substantially partial arcuate.
  • the outer peripheral side is a circular shape and the inner peripheral side is parallel to the receiving direction.
  • a column support is provided at the front end of the column main body in the wafer receiving direction. This makes it possible to support the wafer at the optimum support position without increasing the boat diameter and without obstructing wafer reception, and to provide a sufficient second moment of area.
  • the shape of the pillar main bodies 50b and 50c of the pillars 5b and 5c is the same as that of the pillar main bodies 40b and 40c of the pillars 4b and 4c in the first embodiment.
  • the cross-sectional shape is Ru substantially arcuate or substantially partially arcuate der. Thereby, the secondary moment of section can be further increased as compared with the columns 4b and 4c in the first embodiment.
  • Embodiment 3 will be described with reference to FIG. Fig. 6 shows a radial section of post 6 FIG.
  • the support portion 61 of the column has a point-like projection 6 11.
  • the support portion 61 in the present embodiment has the point-like projections 6 1 1, the contact between the support portion 6 1 and the contact 2 becomes a point contact by the point-like protrusions 6 1 1, thereby reducing the contact area and reducing slippage.
  • the effect of thermal stress can be reduced.
  • FIG. 7 is a radial cross-sectional view of the column 7.
  • the support portion 71 of the column has a linear projection 71 1 having a ridge at a position where the distance from the center of the wafer is constant. Since the support portion 71 in the present embodiment has the line 4 dog protrusion 7 1 1, the contact between the support portion 7 1 and ⁇ ⁇ c 2 is line contact by the linear protrusion 7 1 1, as in the third embodiment. In addition, the contact area can be reduced, and the influence of thermal stress on the slip can be reduced. The same applies to the support 7 as the support 7a at the innermost position in the receiving direction and the supports 7b and 7c in the front row.
  • Example 5 will be described with reference to FIG. FIG.
  • the support portion 81 of the column has a taper 811.
  • the contact between the support portion 81 and the base 2 is a surface contact by the taper 811, the contact area is reduced as in the case of the third and fourth embodiments, and the thermal stress against the occurrence of slip is reduced. Can be reduced.
  • the support portion of the column in the vertical furnace wafer boat has been described as being integral with the column main body. However, it is possible to use a separate support member. Action and effect can be obtained. In addition, the total number of struts has been described as three, but other numbers may be used.
  • the diameter of the wafer is increased and the wafer when the processing temperature is increased It suppresses the generation of stress due to its own weight and makes it less susceptible to the effects of thermal stress. Also, during heat treatment in vertical diffusion furnaces and vertical vapor phase growth furnaces, slip at the contact between wafer and wafer boat It is possible to obtain a heat treatment apparatus and a heat treatment method that can prevent the occurrence of the slip, remove the influence of the slip on the device characteristics, and significantly improve the yield of the device.

Abstract

Cette invention a trait à un dispositif et à un procédé de traitement thermique de tranches permettant de limiter une contrainte provoquée par le poids propre d'une tranche lorsque son diamètre augmente et que la température de traitement monte. Il est possible, grâce à cette invention de diminuer la sensibilité à une contrainte thermique et d'éviter tout glissement au niveau des points de contact entre la tranche et la nacelle porte-tranches lorsque le traitement thermique a lieu dans un four à diffusion verticale et dans un four vertical de croissance à vapeur et ce, afin d'éliminer les effets du glissement. Grâce à ce procédé, le rendement du dispositif est amélioré. Le dispositif comprend une nacelle porte-tranches (3) pour four vertical, comportant plusieurs colonnes verticales (4) et permettant de placer les tranches (2) sur des supports de colonne généralement plats (41), ces supports étant positionnés à intervalles prédéterminés. Les colonnes (4b, 4c) dans la rangée frontale dans le sens de réception des tranches ont une forme en arceau, ou en partie en arceau, au niveau des sections transversales des corps de colonne (40b, 40c), les supports de colonne se trouvant aux extrémités frontales des corps de colonne (40b, 40c) dans le sens de réception des tranches.
PCT/JP2000/000747 1999-02-10 2000-02-10 Dispositif et procédé de traitement thermique de tranches WO2000048244A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3236999A JP2000232151A (ja) 1999-02-10 1999-02-10 縦型炉用ウェハボート
JP11/32369 1999-02-10

Publications (1)

Publication Number Publication Date
WO2000048244A1 true WO2000048244A1 (fr) 2000-08-17

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WO (1) WO2000048244A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6799940B2 (en) 2002-12-05 2004-10-05 Tokyo Electron Limited Removable semiconductor wafer susceptor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7033168B1 (en) 2005-01-24 2006-04-25 Memc Electronic Materials, Inc. Semiconductor wafer boat for a vertical furnace
US7971734B2 (en) * 2008-01-30 2011-07-05 Asm International N.V. Wafer boat
US9153466B2 (en) 2012-04-26 2015-10-06 Asm Ip Holding B.V. Wafer boat
KR101990533B1 (ko) * 2012-11-06 2019-09-30 주식회사 원익아이피에스 배치식 기판처리장치
US10008401B2 (en) * 2013-04-09 2018-06-26 Asm Ip Holding B.V. Wafer boat having dual pitch
JP6469046B2 (ja) * 2016-07-15 2019-02-13 クアーズテック株式会社 縦型ウエハボート
JP6770461B2 (ja) * 2017-02-21 2020-10-14 クアーズテック株式会社 縦型ウエハボート
JP2022099725A (ja) * 2020-12-23 2022-07-05 株式会社Sumco 縦型熱処理炉用熱処理ボートおよび半導体ウェーハの熱処理方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05234925A (ja) * 1992-02-21 1993-09-10 Tekunisuko:Kk ウェーハ支持ボート
JPH069139U (ja) * 1992-07-03 1994-02-04 国際電気株式会社 ウェーハ保持装置
US5507873A (en) * 1992-11-30 1996-04-16 Toshiba Ceramics Co., Ltd. Vertical boat
US5586880A (en) * 1993-01-27 1996-12-24 Tokyo Electron Limited Heat treatment apparatus and heat treatment boat
JPH09251961A (ja) * 1996-03-15 1997-09-22 Toshiba Corp 熱処理用ボート
JPH1022228A (ja) * 1996-07-04 1998-01-23 Sumitomo Metal Ind Ltd 半導体熱処理用治具

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05234925A (ja) * 1992-02-21 1993-09-10 Tekunisuko:Kk ウェーハ支持ボート
JPH069139U (ja) * 1992-07-03 1994-02-04 国際電気株式会社 ウェーハ保持装置
US5507873A (en) * 1992-11-30 1996-04-16 Toshiba Ceramics Co., Ltd. Vertical boat
US5586880A (en) * 1993-01-27 1996-12-24 Tokyo Electron Limited Heat treatment apparatus and heat treatment boat
JPH09251961A (ja) * 1996-03-15 1997-09-22 Toshiba Corp 熱処理用ボート
JPH1022228A (ja) * 1996-07-04 1998-01-23 Sumitomo Metal Ind Ltd 半導体熱処理用治具

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6799940B2 (en) 2002-12-05 2004-10-05 Tokyo Electron Limited Removable semiconductor wafer susceptor

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