WO2000006391A1 - Support et procede d'enregistrement d'informations - Google Patents

Support et procede d'enregistrement d'informations Download PDF

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Publication number
WO2000006391A1
WO2000006391A1 PCT/JP1999/004110 JP9904110W WO0006391A1 WO 2000006391 A1 WO2000006391 A1 WO 2000006391A1 JP 9904110 W JP9904110 W JP 9904110W WO 0006391 A1 WO0006391 A1 WO 0006391A1
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WO
WIPO (PCT)
Prior art keywords
recording layer
recording
layer
information
oxide
Prior art date
Application number
PCT/JP1999/004110
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English (en)
Japanese (ja)
Inventor
Minoru Ichijo
Yoshihiro Ikari
Reiji Tamura
Hitoshi Watanabe
Hidetaka Matsumuro
Original Assignee
Hitachi Maxell, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Maxell, Ltd. filed Critical Hitachi Maxell, Ltd.
Priority to AU49313/99A priority Critical patent/AU4931399A/en
Publication of WO2000006391A1 publication Critical patent/WO2000006391A1/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318—Non-metallic elements
    • G11B2007/2432—Oxygen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates

Definitions

  • the recording layer can be partially transformed between a crystalline state and an amorphous state by heating and cooling, and a signal is recorded in the recording layer by a partial transformation of the recording layer.
  • the present invention relates to an information recording medium and a method of recording information on the information recording medium.
  • JP-A-61-25894 discloses that a mixture of tellurium and tellurium oxide is deposited as an oxygen-containing recording layer on a recording medium substrate by electron beam evaporation or sputtering.
  • JP—A—2—25 25 57 77 discloses that a tellurium-containing compound is deposited as a recording layer containing oxygen on a recording medium substrate by sputtering in a mixed gas of argon and oxygen.
  • JP-A-63-3-5868636 discloses that a compound containing germanium oxide and tellurium is deposited as a recording layer containing oxygen on a recording medium substrate by electron beam evaporation; and Disclosed is that a tellurium-containing compound is deposited as a recording layer containing oxygen on a recording medium substrate by sputtering in a mixed gas of argon and oxygen.
  • An object of the present invention is to suppress the change of recorded information with time, and to make clear reading of Z or recorded information clear. It is an object of the present invention to provide an information recording medium and an information recording method for ensuring the above.
  • the recording layer in the crystalline state surrounding the recording layer in the amorphous state is prevented from growing and entering the crystal (epitaxial) inside the recording layer in the amorphous state, and / or the recording layer in the amorphous state
  • the fact that the recording layer contains oxygen means that the transformed portion changes, in particular, a record that has been transformed from a crystalline state to an amorphous state. Suppresses recrystallization of a part of the layer and suppresses the change of recorded information over time.
  • MA Au, Cu, Pd, Ta, W, Ir, Sc, Y, Ti, Zr, V, Nb, Cr, Mo, Mn, Fe,
  • the ratio of the content of oxygen in the recording layer to the content of all atoms in the recording layer is 2 atoms. If it is less than / 0, it will be difficult to obtain the effect of stabilizing the recording marks formed by the partial transformation of the recording layer. On the other hand, if it is higher than 20 atomic%, it is difficult to easily realize the transformation between the crystalline state and the amorphous state. In order to further enhance the recording mark stabilizing effect, the content is preferably 3 to 15 atomic%, and more preferably 8 to 14 atomic%.
  • the recording layer contains oxygen as an oxide stably retains oxygen in the recording layer, and diffuses components from an amorphous state part and / or a crystal part and / or into or into the recording layer, and Suppresses crystal growth from Z or crystal part into amorphous state part.
  • the recording layer contains Ge, Sb, and Te
  • the content a of at least a portion of Ge as an oxide in the recording layer a, and the content b of other portions of Ge in the recording layer other than at least a portion of Ge as an oxide Is preferably in the range of 0.02 ⁇ aZ (a + b) ⁇ 0.5.
  • the recording layer contains Ge, Sb, and Te
  • the recording layer contains at least a part of Sb as an oxide.
  • the content c of at least a part of Sb as an oxide in the recording layer and the content d of other parts of Sb in the recording layer other than at least a part of Sb as an oxide Is preferably in the range of 0.01 ⁇ c / (c + d) ⁇ 0.2.
  • the content of each element is such that Ge is 10 to 30 atoms. /. 31) is a force in the range of 10 to 30 atomic% and Te is in the range of 40 to 80 atomic%, or Ge is 35 to 65 atomic%, 31) is 10 to 30 atomic%, and Te is 35 to 65 atomic%.
  • the content is in the range of atomic%, the phase change between the amorphous phase and the crystalline phase can be easily performed, and the information can be rewritten.
  • the recording layer when the recording layer contains Ag, In, Sb, and Te, the recording layer preferably contains at least a part of In as an oxide.
  • the content e of at least a part of In as the oxide in the recording layer and the other part of In in the recording layer other than at least a part of In as the oxide The relationship between the content f and the content f is preferably in the range of 0.01 ⁇ e / (e + f) ⁇ 0.5.
  • the recording layer preferably contains at least a part of Sb as an oxide.
  • Content g of at least a part of Sb as an oxide in the recording layer, and content of other parts of Sb in a recording layer other than at least a part of Sb as an oxide Preferably, the relationship with h is in the range of 0.01 ⁇ g / (g + h) ⁇ 0.2.
  • the recording layer comprises Ag, I n, S b, the Te, the content of each element
  • S b is 45 to 80 atomic 0/0
  • a phase change between an amorphous phase and a crystalline phase can be easily performed, and information can be rewritten.
  • N is 1 to 10 atoms.
  • Addition in the range of / 0 has the effects of increasing the crystallization temperature of the amorphous phase or increasing the activation energy.
  • the recording layer is partially heated by light beam or electron beam irradiation.
  • the oxygen or oxide inhibits at least partially the direct contact between the amorphous phase and the crystalline phase, thereby preventing the crystal growth like epitaxy. Therefore, it can be considered that the stability of the amorphous mark is improved.
  • the recording layer contains oxygen as an oxide in the recording layer.
  • the viscosity of a part of the recording layer is increased by the oxide contained in the part of the recording layer.
  • At least part of the boundary between the surrounding recording layer and the rest of the recording layer should be round and smooth so that one of the "0" and "1" states of the signal to be recorded is
  • One of the "0" state and the "1” state of the signal is caused by at least a part of the boundary between the round and smooth part of the recording layer and the other part of the recording layer to the signal recording medium.
  • a part of the recording layer after being cooled so as to be solidified may be in an amorphous state, and the other part of the recording layer may be in a crystalline state, or the part after being cooled so as to be solidified.
  • a part of the recording layer may be in a crystalline state, and the other part of the recording layer may be in an amorphous state.
  • the above method is extremely effective especially when the recording density is increased.
  • a spiral groove or a plurality of concentric grooves on the substrate, a plurality of grooves that extend substantially in the circumferential direction and are arranged in parallel in the radial direction, and between the grooves,
  • a plurality of land areas extending in the circumferential direction and arranged in parallel in the radial direction
  • at least one of the plurality of grooves and the plurality of land areas is a recording track for recording a signal.
  • the smaller the radial spacing of the recording tracks the higher the recording density.
  • the above-described method is more effective when the distance between the recording tracks in the radial direction is ⁇ or less, and is particularly effective when the distance is 0.7 ⁇ or less.
  • the recording density increases as the area of the recording layer cooled so as to be solidified after heating and melting, that is, the minimum circumferential length of the recording mark decreases. If the minimum length of the recording mark in the circumferential direction is less than 0.7 ⁇ , the size of the mark shape distortion due to epitaxy-like crystal growth at the mark boundary with respect to the mark size will increase, and the change in the mark shape will increase.
  • the above method is effective because the influence on the signal quality increases. It is more effective when the minimum length of the recording mark in the circumferential direction is 0.5 ⁇ or less.
  • oxygen When oxygen is contained, diffusion of oxygen from the recording layer to the outside is suppressed, and oxygen is stably retained in the recording layer.
  • the protective layer contains oxygen, the diffusion of oxygen from the protective layer into the recording layer is suppressed because the recording layer contains oxygen.
  • the protective layer contains nitrogen, the change of the recording layer from the amorphous state to the crystalline state, that is, the crystal growth of the crystalline layer of the recording layer in the amorphous layer of the recording layer is suppressed.
  • the ratio of the nitrogen content in the protective layer to the content of all atoms in the protective layer is 1 atomic% or more and 50 atomic% or less. It is preferable that the protective layer comprises a Z n S and S i 0 2. If the protective layer contains at least one of chromium oxide, tantalum oxide, aluminum oxide, and germanium nitride, component diffusion between the protective layer and the recording layer is suppressed, and the components of the recording layer are stable. When the protective layer contains nitrogen, its content is preferably 1 atomic% or more and 50 atomic% or less.
  • the nitrogen content gradient in the film thickness direction in the region where the recording layer and the protective layer are in contact is 1 atomic% Z nm or more and 50 atomic% or less.
  • the oxygen content of the recording layer and the nitrogen content of the protective layer it is possible to obtain the storage stability of the amorphous mark at room temperature and the excellent erasing performance at high temperature. It becomes possible to obtain a rewritable medium.
  • a material for the protective film a mixture of ZnS and SiO 2 is preferable because of its low thermal conductivity and good recording sensitivity.
  • S is diffused into the recording layer by rewriting many times more than 100,000 times, and the optical constant of the recording layer may be changed to cause a decrease in reflectance.
  • Chromium oxide, tantalum oxide, aluminum oxide, and germanium nitride can be used as the protective layer material.
  • chromium oxide has a large optical constant and is excellent in that a large difference in the reflectance between the amorphous phase and the crystal layer can be obtained due to the multiple interference effect.However, it has a disadvantage that stress is large depending on the film forming conditions. . Tantalum oxide is excellent in that it has a large heat capacity and therefore can have a large cooling effect after the recording film is heated and melted. Has the disadvantage of becoming Aluminum oxide is extremely stable Oxide but weak adhesion to the recording film. Germanium nitride is excellent in terms of adhesion to the recording film, but has a drawback in that it is brittle in bulk and difficult to form by sputtering or the like because it is a material.
  • Each of these protective layer materials has superior and inferior points, but by mixing them, there are combinations that eliminate their respective disadvantages and show only advantages.
  • a material other than the above-mentioned materials may be added to the above-mentioned protective layer material.
  • B i 2 S e 3, B i 2 S 3, Mg F 2, Ce F 3, Ca F 2, Ta N, S i 3 N 4, A 1 N, C r N, BN, S i, T i B 2 , B 4 C, S i C, B, C and those having compositions similar to these can be used
  • the oxygen concentration is the ratio of the number of oxygen atoms to the total number of atoms in a unit volume. If the oxygen concentration in the recording layer changes in the thickness direction of the recording layer, the oxygen concentration comes into contact with the recording layer
  • the change in viscosity and the change in reflectance between the surface of the recording layer and the inside of the recording layer can be set as desired, while the component diffusion characteristics between the layer and the surface of the recording layer are set as desired.
  • Adjustment of the oxygen concentration in the recording layer may be performed by oxidizing the recording layer in a gas containing oxygen after the recording layer is formed, or an atmosphere gas during the deposition of the recording layer.
  • the control may be performed by controlling the oxygen concentration of the above.
  • the oxygen concentration increases from approximately the center of the recording layer to at least one of the surfaces on both sides of the recording layer, one of the layers that contacts the recording layer if the oxygen concentration increases. Maintains a high reflectance under the amorphous state at a point almost at the center of the recording layer while suppressing component diffusion between the recording layer and the surface of the recording layer.- A point almost at the center of the recording layer in the thickness direction of the recording layer From both sides, if the oxygen concentration increases towards each of the surfaces on both sides of the recording layer, it is noted that both layers are in contact with the recording layer. While suppressing the diffusion of components to and from the recording layer surface, the reflectivity under the amorphous state at a substantially central point of the recording layer is kept high.
  • the oxygen concentration increases from the point substantially at the center of the recording layer toward at least one of the surfaces on both sides of the recording layer.
  • the increase is at least up to two times.
  • the second surface has an oxygen concentration near the first surface (or oxygen concentration at the first depth from the first surface), the oxygen concentration at the second surface (or approximately the first depth from the second surface) If the oxygen concentration at the first surface is lower than the oxygen concentration at the second surface, the oxygen concentration at the first surface increases toward the oxygen concentration at the second surface due to oxidation of the first surface by oxygen passing through the resin substrate.
  • the oxygen concentration on the surface on both sides in the thickness direction of the layer is made uniform.
  • the reflective layer is generally metallic, and has a lower oxygen permeability than a resin substrate.
  • the reflection layer As a material used for the reflection layer, Au, Ag, Cu, A1, or a material containing at least one of these elements as a main component is preferable because the reflectance is extremely high. When these elements are used alone, the reflectance is extremely high, but the recording sensitivity is reduced due to the extremely high thermal conductivity.
  • Au-Ag and Au-Cu also have high reflectivity and can be reflective layers with low thermal conductivity.
  • the oxygen concentration at the first surface is equal to the oxygen concentration at the second surface (or at a second depth approximately equal to the first depth from the second surface).
  • the pair of recording layers is included in the information recording medium and the reflective layer is disposed relatively inward of the substrate in the information recording medium, and the information is recorded by recording and / or reproduction.
  • the temperature of a relatively inner point in the medium becomes higher than the temperature of a relatively outer point, oxidation of the second surface proceeds due to diffusion of oxygen from the protective layer, so that oxygen on the second surface is increased.
  • the concentration increases toward the oxygen concentration on the first surface, and the oxygen concentration on both surfaces in the thickness direction of the recording layer is made uniform.
  • the pair of recording layers is included in the information recording medium and the reflective layer is included in the information recording medium.
  • the temperature at the relatively inner point in the information recording medium becomes higher than the temperature at the relatively outer point in the information recording medium due to recording and Z or reproduction, Suppresses the progress of oxidation at substantially the center of the recording layer.
  • the oxygen content of the recording layer in the first area and the second area The difference from the oxygen content of the recording layer is 18 atoms. It is preferably at most / 0 .
  • the difference between the oxygen content of the recording layer in the region and the oxygen content of the recording layer in the second region is 18 atoms. It is preferably at most / 0 .
  • the difference between the oxygen content of the recording layer in the first area where information can be recorded as described above and the oxygen content of the second area where only the predetermined information recorded in advance is reproduced is 18%. If it exceeds, the reflectance difference between the two will increase, and it will become difficult to reproduce the information in both the first and second areas in a similar manner.
  • a recording layer is formed by a method such as sputtering on an information recording medium having the first region and the second region as described above, the oxygen content of the first region and the second region immediately after the formation is The values are almost equal, and the reflectances of the two are almost the same, so that there is no hindrance to reproduction.However, the predetermined information in the second area is recorded by embossed pits.
  • the physical shape is different from the first area in which only the grooves for recording and the gap between the grooves are formed, so that the way of oxygen diffusion inside the recording layer over time and the way of intrusion of oxygen from outside Can be different.
  • the recording layer in the first area undergoes an atomic arrangement change, so that oxidation is promoted as compared to the recording layer in the second area, Conversely, oxides can be eliminated. If the recording layer contains oxygen in advance, the above-mentioned problems are less likely to occur, and the difference between the oxygen content of the first area and the oxygen content of the second area after the time change or after multiple recordings is 18% or less. Can be held down.
  • An information recording method for partially transforming the recording layer between a crystalline state and an amorphous state and recording a signal in the recording layer by partial transformation of the recording layer comprising:
  • the signal has a state of "0" and a state of "1", and one of the states of "0" and "1" to be recorded is a part of the recording layer and another of the recording layer.
  • One of the "0" state and the "1" state defined and recorded by at least a part of the boundary between the parts is recognized in at least part of the boundary.
  • the recording layer contains oxygen as an oxide in the recording layer, and when a part of the recording layer is heated and melted, the oxide contained in the part of the recording layer causes a part of the recording layer to be melted.
  • the viscosity is maintained to a high degree to maintain the surface tension of a part of the recording layer to a high degree, whereby the part of the recording layer that has been melted and then cooled so as to be solidified and the recording layer If at least part of the boundary between the other parts of the signal is round and smooth, one of the "0" and "1" states of the signal to be recorded is at least one of the boundaries One of the "0" state and the "1" state of the signal, defined and recorded by the part, is recognized in at least a part of the boundary when the "0" state of the signal is recognized.
  • One of the states and the state of "1" is that at least the boundary between one part of the round and smooth recording layer and the other part of the recording layer In part by, and as it can be clearly reliably defined when recording to the signal recording medium, it can be clearly recognized reliably and when reading from the signal recording medium.
  • a part of the recording layer after being cooled so as to be solidified is in an amorphous state;
  • the other part of the recording layer may be in a crystalline state, or a part of the recording layer after being cooled to be solidified may be in a crystalline state, and the other part of the recording layer may be in an amorphous state. Les ,. It is preferable that a part of the recording layer is heated and melted by light beam irradiation.
  • the recording layer has a first recording layer (4b) and a second recording layer (4a), and the oxygen concentration is sharp between the first recording layer and the second recording layer in the recording layer thickness direction. (Compared to the change in oxygen concentration in the first and second recording layers), the average oxygen concentration in the first recording layer, averaged along the thickness direction of the recording layer, is And the thickness of the first recording layer may be greater than the thickness of the second recording layer.
  • the recording layer may have a plurality of second recording layers, and the first recording layer may be disposed between the second recording layers.
  • FIG. 1 is a schematic sectional view showing the structure of a phase change (transformation) type information recording medium according to an embodiment of the present invention.
  • FIG. 2a is a cross-sectional view of a radially cut substrate showing a groove of the substrate on which the recording layer according to the present invention is disposed and lands protruding from the groove.
  • FIG. 2b shows two embodiments of a substrate on which a recording layer according to the invention is arranged (a plurality of concentric grooves extending substantially radially parallel to a radial direction and a plurality of lands).
  • FIG. 2 is a front view showing a concentric surface shape to be formed, and a spiral surface shape that forms a plurality of grooves and a plurality of lands that are arranged in the radial direction and that extend substantially in the circumferential direction.
  • FIG. 3 is a schematic diagram showing a relationship between a recording mark and one of a “1” state and a “0” state of a signal to be read from or recorded by the recording mark. When the level of the recording signal changes, one of the "1" state and the "0" state of the signal is read and recorded.
  • FIG. 4 is a schematic partial cross-sectional view showing that the recording layer may be composed of a plurality of layers so that the oxygen concentration differs in the thickness direction.
  • Figure 5 shows the relationship between the oxygen concentration, the shortest recorded mark length, and the jitter after the acceleration test.
  • Figure 6 shows the relationship between oxygen concentration, track pitch and jitter after the acceleration test.
  • a substrate 1a was prepared in which a radially parallel groove 1 'extending and a radially parallel land portion 1 "extending substantially circumferentially were prepared in advance.
  • a groove 1' The radial distance between the center and the center of the adjacent land 1 "was 0.74 / m.
  • This substrate 1a was placed in a first sputtering chamber in a sputtering apparatus having a plurality of sputtering chambers and excellent in uniformity of layer thickness and reproducibility.
  • a thickness of 90 nm by sputtering rings in argon gas (Z n S) 80 Mo and (S I_ ⁇ 2) 20 (80 and 20 %) Of the first overlay layer 2 was formed on the substrate 1a. Then, after moving the substrate to a second sputtering chamber, C r 2 0 3 was used, the first protective layer 3 of C r 2 O 3 of 20 nm thick was laminated by sputtering in an argon gas as a target Was. After moving this substrate to the third sputtering chamber,
  • the recording layer 4 was laminated with a thickness of 16 nm by sputtering in argon gas. Then, a mixed gas of argon and oxygen having an oxygen partial pressure of 10% was introduced into the third sputtering chamber at a gas flow rate of 200 SCCM for a certain period of time to oxidize the surface of the recording layer 4. Next, the substrate was moved to the fourth sputtering chamber, and a thickness of 18 nm was formed by sputtering in the same manner as in the formation of the first overlay layer.
  • a second protective layer 5 of (ZnS) 80 (Sio2) 20 (80 and 20 is mol%) was laminated. Then, using the A 1 C r alloy fifth sputtering chamber as data one Ggetto, A 1 94 C r 6 first thickness of the reflective layer 6 35 nm (atomic. / 0 and 94 and 6) by sputtering was laminated. Finally with A 1 T i alloy as Targ Tsu preparative sixth sputtering chamber chamber by sputtering A 1 99 T i! (99% and 1 are% by weight) of the second reflective layer 7 having a thickness of 35 nm. The substrate on which the protective layer, the reflective layer, and the overlay layer are laminated is removed from the sputtering apparatus, and an ultraviolet curable resin is placed on the uppermost layer The protective layer 8 was applied by spin coating.
  • the resin protective layer 8 ' was laminated, and the two substrates la and 1b were opposed to each other with the ultraviolet curable resin protective layers 8 and 8' facing inside, and were bonded together with the adhesive layer 9.
  • the diameter of the adhesive layer was set to 118 mm or more, peeling of the adhesive layer due to impacts such as dropping became difficult to occur.
  • the same oxidation treatment as that of the recording layer 4 was performed on the recording layer 4 ′.
  • the discs were prepared by changing the oxygen content or oxygen concentration in the recording layer by changing the time during which a mixed gas of argon and oxygen was added to the recording layer.
  • initialization was performed by irradiating a laser beam having an elliptical beam with a wavelength of 810 nm, a beam major axis of 75 mm, and a minor axis of 1 mm.
  • the disc is rotated to a linear velocity of about 6 m / s, and a semiconductor laser beam with a wavelength of 660 nm is condensed by an NA0.6 objective lens, irradiated onto the recording layer through the substrate, and recorded and reproduced.
  • NA0.6 objective lens irradiated onto the recording layer through the substrate
  • a random signal modulated with 8-16 modulation was recorded using a waveform in which the laser power was modulated between 111111 and 5111 ⁇ ⁇ .
  • a record mark was formed at a power of llmW, and direct overwriting was performed to erase with a power of 5mW.
  • a multipulse recording waveform that divides recording pulses other than the shortest mark into a plurality was used. Recording was performed both on the groove and on the land.
  • Sample 8 in which the recording layer was not oxidized, the jitter after the accelerated test was significantly increased as compared with Samples 1 to 7.
  • sample 1 which had the longest mixed gas inflow time, the jitter did not change before and after the accelerated test, but the initial jitter was significantly worse than in sample 28.
  • Sample 17 the recording layer was oxidized by flowing a mixed gas containing oxygen after the recording layer was formed.However, the recording layer was formed by sputtering in a mixed gas atmosphere of argon and oxygen. Can also oxidize the recording layer.
  • the Ge content is 10 30 atoms. /.
  • the Sb content is 10 to 30 atoms. /.
  • the Te content is changed in the range of 4080 at%, or the Ge content is 35 65 atoms. /.
  • the Sb content is 10 30 atoms. /. The same results as above were obtained when using a recording layer in which the Te content was changed in the range of 3565 at%.
  • a part or all of Ag is replaced to form Au, Cu Pd, Ta, W, IrScYTi, Z, VNbCr, MoMn, Fe, RuCoRhNi, Ag 110 atoms of at least one element of TlS, Se, Pt and N. Similar results were obtained when the addition was in the range of / 0 .
  • a 2 nm-thick second recording layer 4a was formed using a mixed gas of argon and oxygen as a sputtering gas.
  • the second recording layer 4a having a thickness of 2 nm is formed again by changing to a mixed gas of oxygen and oxygen, and the oxidation treatment is not performed by flowing the argon-oxygen mixed gas after the formation of the recording layer, the reflectivity of the disk is reduced. A higher effect was obtained.
  • the average oxygen content of the first and second recording layers is adjusted from 2 atomic% to 20 atomic% by changing the oxygen partial pressure of the mixed gas when forming the second recording layer, the jitter due to the acceleration test The rise was similar to Table 1.
  • the oxygen content of the first recording layer was 1/3 or less of the oxygen content of the second recording layer, the disk reflectance increased by 2%.
  • the second recording layer 4a When the second recording layer 4a was formed on only one of the first recording layers 4b, characteristics similar to those formed on both sides were obtained. Similar characteristics were obtained when the film thickness of the second recording layer 4a was changed in the range of 1 to 10 nm.However, when the film thickness was increased to 5 nm or more, the recording sensitivity deteriorated, and it was necessary for recording. Power increased by about 1 mW.
  • the same substrate 1a as in Example 1 was placed in a first sputtering chamber in a sputtering apparatus having a plurality of sputtering chambers and having excellent layer thickness uniformity and reproducibility.
  • a thickness of 90 nm by sputtering in argon gas (Z n S) 80 (S i 0 2) 20 (80 A and 20 mole 0 / 0 ) was formed on the substrate 1a.
  • Z n S argon gas
  • Cr 2 O 3 was used as a target, and a 20 nm-thick first protective layer 3 of Cr 2 O 3 was deposited by sputtering in argon gas. did.
  • An A 1 Ti alloy was used as a target, and a second reflective layer 7 having a thickness of 35 nm was deposited by sputtering with A 1 99 Ti ⁇ (99 and 1 being% by weight).
  • the substrate on which the overlayer, the protective layer, the recording layer, and the reflective layer were laminated was taken out of the sputtering apparatus, and the ultraviolet curable resin protective layer 8 was formed on the second reflective layer 7 by spin coating.
  • the substrate 1 b On another similar substrate 1 b,
  • each sample disk was initialized in the same manner as in Example 1, and a drive signal was used to record a random signal 8-6-1 modulated. After that, an acceleration test was performed in which these disks were left in an environment of 70% and 90% for 40 days.After the acceleration test, a playback test was performed on the drive, and the number of disks whose error rate was at least twice as high as before the test Was examined.
  • a is the content of Ge in oxide state
  • b is the content of Ge in non-oxide state of metal or alloy
  • c is the content of Sb in oxide state
  • d is It is the content of Sb in the non-oxide state of the metal or alloy.
  • the Ge content is 10 to 30 atom%, and 31) the content is 10 to 30 atom. /.
  • T e when the content was used a recording layer was changed within a range of 40 to 80 atomic%, or G e content of 35 to 65 atomic%, S b content of 10-30 atomic 0/0, T The same results as above were obtained when using a recording layer in which the e content was changed in the range of 35 to 65 atomic%.
  • a part or all of Ag is substituted to Au, Cu, Pd, Ta, W, Ir, Sc, Y, Ti, Zr, V, Nb, Cr, Mo, Mn, F e, Ru, Co, At least one element of Rh, Ni, Ag, Tl, S, Se, Pt and N is 1 to 10 atoms. Similar results were obtained when the addition was in the range of / 0 .
  • the first protective layer 2 was formed on the substrate 1a.
  • argon As a sintered body, argon
  • the recording layer 4 was laminated with a thickness of 20 nm by sputtering in a gas. Thereafter, the substrate was moved to an oxide formation chamber, and left in an oxygen atmosphere for a certain time to oxidize the recording layer 4. Next, the substrate is moved to the third sputter chamber, and a thickness of 20 nm is formed in the same manner as the formation of the first protective layer.
  • Example 1 The technical limitation, except that recording was performed only on the groove, was as described in Example 1.
  • the disc was placed in an environment at 80 ° C and 90%.
  • An acceleration test in which the sample was allowed to stand for 200 hours was performed below, and the jitter was measured after the acceleration test.
  • the oxygen partial pressure and the storage time were changed and the content of In oxide and Sb oxide in the recording layer was changed, the jitter before and after the acceleration test was as follows.
  • the content of In oxide and Sb oxide in the recording layer was measured using an XPS apparatus, and the XPS spectra of In and Sb were separated by peaks.
  • e is the In content in the oxide state
  • f is the In content in the non-oxide state of the metal or alloy
  • g is the Sb content in the oxide state
  • h is The content of Sb in the non-oxide state of the metal or alloy.
  • the recording layer was oxidized by leaving the recording layer in an oxygen atmosphere.However, the recording layer was also oxidized by forming the recording layer in a mixed gas atmosphere of argon and oxygen. Can be.
  • the Ag content is 1 to 15 atoms. /.
  • the content is 1 to 15 atom%, and the Sb content is 45 to 80 atom. /.
  • the same results as described above were obtained when using a recording layer in which the Te content was changed in the range of 20 to 40 atomic%.
  • Example 2 The same substrate 1a as that of Example 1 was placed in a first sparch chamber in a sputtering apparatus having a plurality of sputter chambers and having excellent film thickness uniformity and excellent reproducibility. Using a mixture of ZnS and SiO 2 as a target, a 90 nm thick
  • a 1 94 C r 6 (atom. / 0) and the first reflective layer 6 was formed with a thickness of 35 nm.
  • the laminated substrate was taken out from the sputtering apparatus, and an ultraviolet curable resin protective layer 8 was formed on the uppermost layer by spin coating.
  • an ultraviolet curable resin protective layer 8 was formed on the uppermost layer by spin coating.
  • Oxygen-containing organic content in the recording film is kept constant at 8 atomic%, Z n S- S i 0 2 - by changing the N nitrogen concentration in the mixed gas of argon emissions and nitrogen during deposition of the second protective layer Z n S- S i O 2 - when changing the n nitrogen content of the second protective layer, disc number of sheets after the acceleration test Erareto is increased more than 2 times were as follows.
  • the oxygen content in the recording film and the nitrogen content in the second protective layer were measured by using forge electron spectroscopy.
  • the reproduction error rate not only doubled or increased with nine out of ten discs but also with eight of those discs. A phenomenon that made it extremely difficult. Nitrogen content 50 atoms. In some cases, the reproduction error was more than doubled in the case of / 0 , 25 atomic%, but no phenomenon that made reproduction difficult in these disks occurred.
  • Example 2 After recording on a disk manufactured in the same manner as in Example 1 with the shortest mark length changed, an acceleration test was performed in which the sample was left for 100 hours in an environment with a temperature of 90% and a relative humidity of 80% to accelerate. After the test, the jitter was measured. The radial distance between the center of the groove 1 'and the land 1 "adjacent to it is 0.74 ⁇ , and recording is performed both on the groove and on the land. I got it.
  • the modulation method is a mark position method in which information of 1 is placed at the mark position and information of 0 is placed at other positions, and information 1 is placed at the end of the mark and information is placed at other positions. We examined both of the mark edge methods. When the oxygen content in the recording film was changed, the jitter after the acceleration test changed as shown in FIG.
  • FIG. 2 It is made of a transparent material (eg, polycarbonate resin, glass, etc.) with a diameter of 120 mm and a thickness of 0.6 mm, as shown in FIG. 2 (ie, on a concentric or spiral surface).
  • a radially extending groove 1 ′ extending substantially in the circumferential direction and a radially extending land 1 ′′ extending substantially in the circumferential direction are formed, and the center of the groove 1 ′ and the land adjacent thereto are formed.
  • substrates 1a having different distances from the center of 1 "were prepared.
  • the modulation method is a mark position method in which information of 1 is placed at the position of the mark and information of 0 is placed at the other position, and information 1 is placed at the end of the mark and information of 0 is placed at the other position. Both mark edge methods were studied.
  • FIG. 2 It is made of a transparent material (eg, polycarbonate resin, glass, etc.) with a diameter of 120 mm and a thickness of 0.6 mm, as shown in FIG. 2 (ie, on a concentric or spiral surface).
  • a transparent material eg, polycarbonate resin, glass, etc.
  • lands 1 ′′ extending substantially in the circumferential direction
  • these grooves 1 ′ or lands 1 ′′ are formed.
  • the circumferential direction it is divided into a plurality of groove portions or a plurality of land portions, and in the region between the groove portions or the land portions, the groove 1 ′ or the land portion 1 ′′ extends in the circumferential direction along which it extends.
  • substrate 1 a of the embossed pits are formed indicating, for example Adoresu information substantially along. both on the substrate, to prepare a disk in the same manner as in example 1, the groove 1 'and the land portion 1 " Record track After recording 10,000 times on multiple recording tracks, an acceleration test was performed in which the device was left in an environment at a temperature of 90 ° C and a relative humidity of 80% for a certain period of time.
  • the relationship between the oxygen content in the recording layer of the area where the emboss pits indicating information and the like are formed, that is, the second area where only predetermined information is reproduced, and the reflectance of the first area and the second area is as follows. Has changed to

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

L'invention concerne un support d'enregistrement d'informations comportant un substrat et une couche d'enregistrement sur ce substrat. La couche d'enregistrement est partiellement transformée entre un état cristallin et un état amorphe lorsqu'on la chauffe et qu'on la refroidit partiellement. Un signal est enregistré dans la couche d'enregistrement suite à la transformation partielle de cette dernière, et la couche d'enregistrement contient de l'oxygène.
PCT/JP1999/004110 1998-07-31 1999-07-30 Support et procede d'enregistrement d'informations WO2000006391A1 (fr)

Priority Applications (1)

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AU49313/99A AU4931399A (en) 1998-07-31 1999-07-30 Information recording medium and information recording method

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JP10/229535 1998-07-31
JP22953598 1998-07-31

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US10/330,245 Division US20030124458A1 (en) 1998-07-31 2002-12-30 Information recording medium and information recording method

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007061021A1 (fr) * 2005-11-22 2007-05-31 Sony Corporation Support d’enregistrement optique enregistrable son et procédé de fabrication
JP2007293949A (ja) * 2006-04-21 2007-11-08 Toshiba Corp 光記録媒体、情報記録再生装置及び方法
US7352680B2 (en) 2001-06-26 2008-04-01 Ricoh Company, Ltd. Optical recording medium having relation between reflection layer and pit length
JP2008217858A (ja) * 2007-02-28 2008-09-18 Toshiba Corp 相変化記録媒体およびこの媒体を用いる情報記録再生装置

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WO1997034298A1 (fr) * 1996-03-11 1997-09-18 Matsushita Electric Industrial Co., Ltd. Support optique d'enregistrement de donnees, procede de fabrication, et procede de reproduction/effacement d'un enregistrement
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JPH10326438A (ja) * 1997-05-26 1998-12-08 Tdk Corp 光記録媒体の製造方法および光記録媒体
JPH10324063A (ja) * 1997-05-27 1998-12-08 Teijin Ltd 相変化型光記録媒体およびその製造方法
JPH10329426A (ja) * 1997-05-29 1998-12-15 Tdk Corp 光記録媒体およびその製造方法
JPH11115315A (ja) * 1997-08-12 1999-04-27 Matsushita Electric Ind Co Ltd 光学情報記録媒体とその製造方法、及びこの媒体を用いた情報の記録再生方法

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JPS6042095A (ja) * 1983-08-19 1985-03-06 Hitachi Ltd 情報の記録用部材およびその製造方法
JPS63173240A (ja) * 1987-01-12 1988-07-16 Matsushita Electric Ind Co Ltd 光学情報記録媒体
JPS63227389A (ja) * 1987-03-18 1988-09-21 Toray Ind Inc 光記録媒体
JPH01303645A (ja) * 1988-05-31 1989-12-07 Matsushita Electric Ind Co Ltd 光学記録担体およびその製造方法
JPH04119885A (ja) * 1990-09-11 1992-04-21 Matsushita Electric Ind Co Ltd 光記録媒体と光記録媒体の製造方法
JPH04254925A (ja) * 1991-02-07 1992-09-10 Mitsubishi Kasei Corp 光学的情報記録用媒体
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JPH11115315A (ja) * 1997-08-12 1999-04-27 Matsushita Electric Ind Co Ltd 光学情報記録媒体とその製造方法、及びこの媒体を用いた情報の記録再生方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7352680B2 (en) 2001-06-26 2008-04-01 Ricoh Company, Ltd. Optical recording medium having relation between reflection layer and pit length
WO2007061021A1 (fr) * 2005-11-22 2007-05-31 Sony Corporation Support d’enregistrement optique enregistrable son et procédé de fabrication
US7924694B2 (en) 2005-11-22 2011-04-12 Sony Corporation Write-once type optical recording medium and fabrication method thereof
JP2007293949A (ja) * 2006-04-21 2007-11-08 Toshiba Corp 光記録媒体、情報記録再生装置及び方法
JP2008217858A (ja) * 2007-02-28 2008-09-18 Toshiba Corp 相変化記録媒体およびこの媒体を用いる情報記録再生装置

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CN1311739A (zh) 2001-09-05

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