WO1995025149A1 - Element organique electroluminescent - Google Patents
Element organique electroluminescent Download PDFInfo
- Publication number
- WO1995025149A1 WO1995025149A1 PCT/JP1995/000436 JP9500436W WO9525149A1 WO 1995025149 A1 WO1995025149 A1 WO 1995025149A1 JP 9500436 W JP9500436 W JP 9500436W WO 9525149 A1 WO9525149 A1 WO 9525149A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- formula
- hole transport
- represented
- transport layer
- organic electroluminescent
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
Definitions
- the present invention relates to an organic electroluminescent (EL) device. ⁇ Background technology>
- the above-mentioned organic electroluminescent element has a problem that the light emission efficiency deteriorates and the light emission luminance decreases in a very short time after the start of use, and the improvement of the light emission life and stability is a major issue.
- An object of the present invention is to provide an organic electroluminescent device having a hole transport layer having both sufficient durability and high hole transport ability, and having excellent luminous efficiency, luminous luminance and stability.
- the hole transporting material dispersed in the binder resin is also prevented from forming an exciplex with the light emitting material.
- the hole transporting material dispersed in the binder resin does not need to consider the thermal characteristics of the hole transporting material itself, as can be seen from the structure of the hole transporting layer. Can be selected and used as appropriate.
- FIGS. 1 (a) and 1 (b) are cross-sectional views showing an example of the layer structure of the organic EL device of the present invention.
- FIG. 7 is a graph showing the voltage-luminance characteristics of the organic EL device of Example 5.
- the binder resin having a glass transition temperature Tg of 170 ° C. or more that constitutes the hole transport layer in the organic electroluminescence device of the present invention has various conceivable forces.
- the hole transport material is dispersed in the binder resin.
- the hole transport layer is formed by applying a solution in which both components are dissolved in an appropriate solvent by spin coating, dip coating, etc., on the base, and then drying it by a solution coating method. For this reason, the binder resin needs to be soluble in a solvent.
- polysulfone-based resins having a repeating unit represented by the following formula: so-called Udel-Polysulfone (trade name, manufactured by Acco Performance Co., Ltd.), glass transition temperature Tg 190 ° C.
- polyethersulfone having a repeating unit represented by the above formula (1) has the highest glass transition temperature as a solvent-soluble (soluble in dichloromethane) resin. Most preferably used.
- the above polyethersulfone also has excellent film-forming properties when used in a solution coating method.
- binder resin other than the above-mentioned polysulfone-based binder resin examples include polyamide-based resins such as wholly aromatic polyimides and polyetherimides (the glass transition temperature T g of the polyimide-based resin is not limited to that of the polyimide-based resin. Depending on the structure of the underlying diamine and acid components, it is usually at least 280 ° C for wholly aromatic polyimides and about 217 ° C for polyesterimides).
- Examples of the hole transport material dispersed in the binder resin include, but are not limited to, aromatic tertiary amines, phthalocyanines, and policies. Among the various well-known hole transporting materials such as orchids, those having excellent hole transporting ability can be selectively used as described above. In particular, aromatic tertiary amines represented by the TPD represented by the above formula (2) are included as a hole transport material suitable for the present invention.
- a binder resin and a hole transport material are used. Is dissolved in a common solvent in a predetermined ratio to prepare a coating solution.
- this coating solution is applied on the lower surface by a known coating method such as spin coating or dip coating, and the solvent is dried and removed to form a film. Is dispersed, thereby obtaining a hole transport layer.
- the solvent used for the coating liquid is not particularly limited as long as it can dissolve both the resin and the hole transport material.However, considering the removal from the coating film after film formation, the solvent having a relatively high boiling point is used. Low organic solvents are preferably employed.
- which of the hole transport layer 2 and the electron transport layer 3 emits light depends on the film thickness of both layers, or the material constituting both layers, especially the combination of the hole transport material and the electron transport material.
- the combination of the film thickness and the material may be adjusted so that one or both of the hole transport layer 2 and the electron transport layer 3 emit light in accordance with a desired emission wavelength.
- the present invention it is possible to improve the durability and extend the life of the organic electroluminescence element, and it is highly likely to be used in the fields of display, illumination, display and the like in the future.
- an ITO (indium-tin oxide) coated glass substrate made by Asahi Glass Co., Ltd., I ⁇ film thickness 1500-1600 A
- the coating solution was applied by a dip coating method under the condition of 0 cm / min, and then dried to form a hole transport layer having a thickness of 40 OA on the ITO film of the substrate.
- the organic Erekuto port device as the comparative example 2 in the same manner as in Example 1, at room temperature, in air, the initial luminance 1 00 c DZM 2 in by continuous emission, half-life of the emission brightness (luminance 50 cd / The time it takes to reach m2 is 2 minutes.
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950705150A KR100246496B1 (ko) | 1994-03-16 | 1995-03-15 | 유기일렉트로루미너 센스소자 |
EP95912420A EP0702075A4 (en) | 1994-03-16 | 1995-03-15 | ORGANIC ELECTROLUMINESCENT ELEMENT |
US08/716,871 US5821003A (en) | 1994-03-16 | 1996-09-20 | Organic electroluminescent device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4560594 | 1994-03-16 | ||
JP6/45605 | 1994-03-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1995025149A1 true WO1995025149A1 (fr) | 1995-09-21 |
Family
ID=12723994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1995/000436 WO1995025149A1 (fr) | 1994-03-16 | 1995-03-15 | Element organique electroluminescent |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0702075A4 (ja) |
KR (1) | KR100246496B1 (ja) |
CA (1) | CA2163010A1 (ja) |
TW (1) | TW406199B (ja) |
WO (1) | WO1995025149A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000514590A (ja) * | 1996-07-05 | 2000-10-31 | バイエル・アクチエンゲゼルシヤフト | エレクトロルミネッセンス装置 |
JP2001185355A (ja) * | 1999-10-13 | 2001-07-06 | Semiconductor Energy Lab Co Ltd | 薄膜形成装置 |
JP2001223077A (ja) * | 1999-11-29 | 2001-08-17 | Semiconductor Energy Lab Co Ltd | 成膜装置及びそれを用いた発光装置の作製方法 |
JP2003217840A (ja) * | 2002-01-23 | 2003-07-31 | Seiko Epson Corp | 有機el装置の製造方法および製造装置、並びに有機el装置、電子機器および液滴吐出装置 |
JP2004006243A (ja) * | 1999-06-04 | 2004-01-08 | Semiconductor Energy Lab Co Ltd | 電気光学装置の作製方法 |
US8890172B2 (en) | 1999-06-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
JP2018507535A (ja) * | 2014-12-15 | 2018-03-15 | 日産化学工業株式会社 | 正孔輸送材料とポリ(アリールエーテルスルホン)とを含有する組成物及びその使用 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19535063A1 (de) * | 1995-09-21 | 1997-03-27 | Bayer Ag | Elektrolumineszierende Anordnungen |
EP1011154B1 (en) * | 1998-12-15 | 2010-04-21 | Sony Deutschland GmbH | Polyimide layer comprising functional material, device employing the same and method of manufacturing same device |
US6818919B2 (en) * | 2002-09-23 | 2004-11-16 | Air Products And Chemicals, Inc. | Light emitting layers for LED devices based on high Tg polymer matrix compositions |
KR101030012B1 (ko) | 2004-05-07 | 2011-04-20 | 삼성모바일디스플레이주식회사 | 유기 전계 발광 소자 |
US7352125B2 (en) | 2005-12-21 | 2008-04-01 | Lg.Philips Lcd Co., Ltd. | Organic light emitting devices with hole impeding materials |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02242879A (ja) * | 1989-03-16 | 1990-09-27 | Asahi Chem Ind Co Ltd | 有機el素子 |
JPH0485389A (ja) * | 1990-07-26 | 1992-03-18 | Ricoh Co Ltd | 電界発光素子 |
JPH058346A (ja) * | 1990-10-17 | 1993-01-19 | Mitsubishi Kasei Polytec Co | 耐熱性防湿フイルム |
JPH05194943A (ja) * | 1991-08-05 | 1993-08-03 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子 |
JPH06122277A (ja) * | 1992-08-27 | 1994-05-06 | Toshiba Corp | アモルファス有機薄膜素子およびアモルファス有機ポリマー組成物 |
JPH06290268A (ja) * | 1993-02-03 | 1994-10-18 | Nippon Telegr & Teleph Corp <Ntt> | 画像のエッジ抽出処理方法 |
JPH0758363A (ja) * | 1993-08-13 | 1995-03-03 | Mitsui Toatsu Chem Inc | 発光ダイオード及びその製造方法 |
-
1995
- 1995-03-15 KR KR1019950705150A patent/KR100246496B1/ko not_active IP Right Cessation
- 1995-03-15 WO PCT/JP1995/000436 patent/WO1995025149A1/ja not_active Application Discontinuation
- 1995-03-15 CA CA002163010A patent/CA2163010A1/en not_active Abandoned
- 1995-03-15 EP EP95912420A patent/EP0702075A4/en not_active Withdrawn
- 1995-03-16 TW TW084102515A patent/TW406199B/zh not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02242879A (ja) * | 1989-03-16 | 1990-09-27 | Asahi Chem Ind Co Ltd | 有機el素子 |
JPH0485389A (ja) * | 1990-07-26 | 1992-03-18 | Ricoh Co Ltd | 電界発光素子 |
JPH058346A (ja) * | 1990-10-17 | 1993-01-19 | Mitsubishi Kasei Polytec Co | 耐熱性防湿フイルム |
JPH05194943A (ja) * | 1991-08-05 | 1993-08-03 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子 |
JPH06122277A (ja) * | 1992-08-27 | 1994-05-06 | Toshiba Corp | アモルファス有機薄膜素子およびアモルファス有機ポリマー組成物 |
JPH06290268A (ja) * | 1993-02-03 | 1994-10-18 | Nippon Telegr & Teleph Corp <Ntt> | 画像のエッジ抽出処理方法 |
JPH0758363A (ja) * | 1993-08-13 | 1995-03-03 | Mitsui Toatsu Chem Inc | 発光ダイオード及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP0702075A4 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000514590A (ja) * | 1996-07-05 | 2000-10-31 | バイエル・アクチエンゲゼルシヤフト | エレクトロルミネッセンス装置 |
JP2004006243A (ja) * | 1999-06-04 | 2004-01-08 | Semiconductor Energy Lab Co Ltd | 電気光学装置の作製方法 |
US8890172B2 (en) | 1999-06-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
US9293726B2 (en) | 1999-06-04 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
JP2001185355A (ja) * | 1999-10-13 | 2001-07-06 | Semiconductor Energy Lab Co Ltd | 薄膜形成装置 |
JP2001223077A (ja) * | 1999-11-29 | 2001-08-17 | Semiconductor Energy Lab Co Ltd | 成膜装置及びそれを用いた発光装置の作製方法 |
JP2003217840A (ja) * | 2002-01-23 | 2003-07-31 | Seiko Epson Corp | 有機el装置の製造方法および製造装置、並びに有機el装置、電子機器および液滴吐出装置 |
US7517549B2 (en) | 2002-01-23 | 2009-04-14 | Seiko Epson Corporation | Method of, and apparatus for, manufacturing organic EL device; organic EL device; electronic device; and liquid droplet ejection apparatus |
JP2018507535A (ja) * | 2014-12-15 | 2018-03-15 | 日産化学工業株式会社 | 正孔輸送材料とポリ(アリールエーテルスルホン)とを含有する組成物及びその使用 |
Also Published As
Publication number | Publication date |
---|---|
TW406199B (en) | 2000-09-21 |
KR960702502A (ko) | 1996-04-27 |
CA2163010A1 (en) | 1995-09-21 |
EP0702075A1 (en) | 1996-03-20 |
EP0702075A4 (en) | 1996-08-21 |
KR100246496B1 (ko) | 2000-04-01 |
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