WO1994024699A1 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- WO1994024699A1 WO1994024699A1 PCT/JP1994/000586 JP9400586W WO9424699A1 WO 1994024699 A1 WO1994024699 A1 WO 1994024699A1 JP 9400586 W JP9400586 W JP 9400586W WO 9424699 A1 WO9424699 A1 WO 9424699A1
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- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- connection
- electrodes
- substrate
- electrode
- Prior art date
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Definitions
- the present invention relates to a connection structure between a protruding electrode provided in a semiconductor device and a substrate.
- COG chip-on-glass
- a semiconductor device is mounted on a substrate made of glass, which is one of the means for mounting a semiconductor device on a liquid crystal display device
- Fig. 4 and Fig. 5. explain.
- Fig. 4 is a cross-sectional view showing the protruding electrodes provided in the semiconductor device
- Fig. 5 is a cross-sectional view showing the actual structure in which the semiconductor device and the substrate are connected using the COG method.
- a protective film 1 3 is formed so as to openly expose the connection pad 1 2 made of aluminum provided on the element forming surface of the semiconductor device 1 1. Furthermore, a common electrode film 1 4 is formed on the connection pad 1 2 to prevent adhesion and diffusion with this connection pad 1 2. Furthermore, the protruding electrode 15 is formed by using a metal such as copper or gold (A u) by the metallization method or the vacuum vapor deposition method. The protruding electrode 15 is also formed on the semiconductor element forming region in order to improve the mounting density.
- a conductive adhesive 1 8 obtained by mixing conductive particles 19 with an epoxy adhesive is applied to the tip of the protruding electrode 1 5 of the semiconductor device 1 1 by a dip method or a printing method. ..
- connection electrode 1 7 formed on the glass substrate 1 6 and the protrusion electrode 1 5 are brought into contact with each other.
- the connection electrode 17 is composed of a transparent conductive film such as indium tin oxide (hereinafter referred to as ITO).
- the conductive particles 19 and the protruding electrodes 15 and the conductive particles 19 and the adhesive electrodes 17 and the conductive particles 19 are made conductive with each other, and a good electrical connection can be obtained.
- the tensile stress between the semiconductor device 1 1 and the substrate 16 due to the volumetric shrinkage of the conductive adhesive 18 generates an adhesive force that stabilizes the connection and improves the electrical connectivity.
- a sealing resin 20 made of an organic material such as epoxy is poured into the gap between the semiconductor device 1 1 and the substrate 16 and heat-treated to cure the sealing resin 20.
- Fig. 1 is a plan view of the connection electrode 17 on the glass base plate and the cured conductive adhesive 1 8 as viewed from above.
- the pitch dimension between the conventional connection electrodes 17 is about 300, but a pitch dimension of 150 u m and a pitch dimension of 100 m are being studied.
- the diameter of the protruding electrode of the semiconductor device should be reduced to match the pitch dimension of the connecting electrode 17, and the size of the conductive adhesive 18 formed on the protruding electrode should be reduced.
- the conductive adhesive is formed on the protruding electrodes by the printing method as described above, it is partially conductive due to the influence of the height variation of the protruding electrodes and the flatness variation of the semiconductor device and the printing device. The amount of the conductive adhesive formed increases, which causes the size of the conductive adhesive to increase in some places.
- an object of the present invention is to obtain a high connection yield without causing a show between the connection electrodes due to a conductive adhesive or solder even in a high-density connection having a connection pitch dimension of 150 111 or less. It is an object of the present invention to provide a semiconductor device having the obtained connection structure.
- the semiconductor device of the present invention adopts the following configuration.
- a substrate having a plurality of connecting electrodes, a semiconductor device having protruding electrodes, a conductive adhesive for connecting the connecting electrodes and the protruding electrodes, and a flow provided between the connecting electrodes of the substrate. It is characterized by having a preventive material.
- the semiconductor device of the present invention is characterized by having a substrate having a plurality of connection electrodes, a semiconductor device having a projecting electrode made of solder, and a flow prevention material provided between the connection electrodes of the substrate.
- a conductive adhesive or a solder flow preventive material is provided between the connection electrodes arranged on the substrate. This prevents shorts between the connection electrodes due to conductive adhesive or solder, and obtains a high connection yield between the protruding electrodes provided in the semiconductor device and the connection electrodes placed on the substrate.
- gold or copper protruding electrodes are formed on the semiconductor device, and the connecting electrodes on the substrate are composed of a transparent conductive film such as ITO.
- the protruding electrodes of the semiconductor device are formed of solder, and the connection electrodes on the base plate are made of gold or metal wiring such as soldered copper.
- an organic or inorganic insulating material can be patterned and used, or an effect can be obtained even if it is formed of the same material as the connection electrode.
- the conductive adhesive formed between the semiconductor device and the substrate once loses its viscosity during thermosetting, spreads to the periphery at the interface of the substrate, and then cures. At that time, if there is even a slight protrusion on the substrate, the spread of the conductive adhesive is suppressed.
- a flow prevention material with a thickness of 0.1 to several meters between the connecting electrodes as this protrusion, the spread of the conductive adhesive is suppressed and the show between the connecting electrodes is prevented. Can be done.
- connection electrodes Even in solder connection, short-circuiting between connection electrodes can be prevented by suppressing the spread of the solder to the periphery by melting with a flow prevention material.
- FIG. 1 is a plan view showing a mounting structure of a semiconductor device in a conventional example
- FIG. 2 is a plan view showing a mounting structure as a first specific example of the semiconductor device of the present invention.
- FIG. 3 is a plan view showing a mounting structure as a second specific example of the semiconductor device of the present invention.
- FIG. 4 is a cross-sectional view showing a protruding electrode provided in a semiconductor device that can be placed in the present invention and the conventional example.
- FIG. 5 is a cross-sectional view showing the mounting structure of the semiconductor device and the substrate in the present invention and the conventional example.
- FIG. 6 is a cross-sectional view showing the connection electrode of the substrate and the flow prevention material in the present invention. The best mode for carrying out the invention
- FIG. 2 is a plan view showing a connection structure as a first specific example of a semiconductor device using a conductive adhesive in the first embodiment of the present invention, and shows a connection electrode 17 on a substrate made of glass. It is a top view of the conductive adhesive 18 8 after curing.
- connection electrode 1 7 is made of ITO with a thickness of 0.25 m, and the pitch dimension of the connection electrode 1 7 in the left-right direction in Fig. 2 is 150 wm, and the connection electrode 1 The size of 7 is 100 m square, and the clearance between the connection electrode 1 7 and the connection electrode 1 ⁇ is 50. um.
- a flow preventive material 2 1 with a thickness of 1 Lt m and a width of 10 is formed between the connection electrodes 17 on the substrate by using a photoresist, which is a photosensitive organic insulating material.
- the pitch dimension of the connection electrode 17 in the left-right direction is 150 rn and the pitch dimension of the up-down direction is 200 in Fig. 2, the flow flows only in the left-right direction of the connection electrode 17 When the preventive material 2 1 is formed, but the pitch dimension in the vertical direction is also short, it is preferable to form the flow preventive material 2 1 on the vertical and horizontal sides of the connecting electrode 17.
- conductive adhesives 1 8 are formed in a circular shape with a size close to the size of the connection electrode 17 from 100 to 120 m, but the amount of conductive adhesive formed as indicated by the arrow 25 In the part where there are many, the conductive adhesive 18 becomes large.
- the flow preventive material 2 1 suppresses the spread of the conductive adhesive 1 8 to the right in Fig. 2. Therefore, it is possible to prevent the occurrence of a short circuit between the conductive adhesive 1 8 and the adjacent connection electrode 17 7.
- connection electrode 17 it is possible to prevent the occurrence of a short circuit with the adjacent connection electrode 17 and to connect with a high connection yield even in a high-density arrangement in which the pitch dimension of the connection electrode 17 is about 150 nm.
- FIG. 4 is a cross-sectional view showing a semiconductor device on which a protruding electrode used in the present invention is formed.
- a protective film 1 3 is formed on the entire surface including the connection pad 1 2 made of aluminum provided on the element forming surface of the semiconductor device 1 1.
- the protective film 13 generally uses a phosphorus-containing silicon oxide film, an inorganic insulating film such as a silicon nitride film, an organic insulating film such as a polyimide resin, or a laminated structure thereof. This protection The film thickness of the protective film 13 is l to 5 um.
- the protective film 13 is opened so that the connection pad 1 2 is exposed by photolithography in which exposure and development processing is performed using a predetermined mask and etching.
- a metal multilayer film such as aluminum, chromium, copper, nickel, and titanium is applied to the entire surface of the semiconductor device 11 as a common electrode film 14, with a thickness of 0. l to 10 um, respectively, such as a spattering method or vacuum deposition method. It is formed by the method of.
- a methyl resist (not shown) made of a photosensitive resin is applied to the entire surface of the common electrode film 14 formed on the semiconductor device 1 1 to a thickness of 1 to 10 um, and then using a predetermined machine.
- a photolithography process that performs exposure phenomenon processing provides a Metsukiresis with an opening on the connection pad 12.
- a protruding electrode 15 made of a metal such as copper or gold (Au) is formed by the MEtsuki method.
- the unnecessary metal resist is removed, the unnecessary common electrode film is removed by using the protrusion electrode 15 as an etching mask, and the common electrode film 14 is formed so as to remain only under the protrusion electrode 15.
- FIG. 6 is a cross-sectional view showing the semiconductor device connection portion of the substrate 16.
- a transparent conductive film such as I TO is formed on the entire surface of the connecting surface of the glass substrate 16 by a sputtering method or a vacuum deposition method to a thickness of 0.1 to 1 m.
- a resin (not shown) made of photosensitive resin is formed by a 1 to 1 O wm thickness coating method, and exposure development processing is performed using a mask corresponding to the protruding electrodes of the semiconductor device.
- the connection electrode 17 is formed by lithography and etching of a transparent conductive film. After that, the resist that is no longer needed is removed.
- a positive type resist which is an organic material, is used. It is formed on the entire surface by a rotary coating method or a roll coater, and temporarily dried at a temperature of 80 to 100 ° C.
- the width dimension of the flow prevention material 2 1 is adjusted by the pitch dimension of the connection electrode 17 and is preferably 5 to 20.
- Example 1 a photoresist, which is an organic insulating material, was used as the material of the flow prevention material 21, but photosensitive acrylic resin, photosensitive gelatin, photosensitive casein, etc. can also be used.
- a flow-preventing material 2 1 can also be formed using a photo-etching process.
- FIG. 5 is a cross-sectional view showing a mounting method between the semiconductor device and the substrate.
- a conductive adhesive 18 is formed on the tip of the protruding electrode 15 of the semiconductor device 1 1 by a dip method or a printing method.
- connection electrodes 1 7 arranged on the glass substrate 16 and the protrusion electrodes 1 5 provided on the semiconductor device 1 1 are aligned.
- the semiconductor device 1 1 is pressurized, and the conductive adhesive 18 is cured at a temperature of 100 to 200 ° C while temporarily connected to the substrate 16.
- a sealing resin 20 made of organic materials such as epoxy and rubber is injected between the semiconductor device 1 1 and the substrate 16 and cured at a temperature of 100 to 150 ° C. , A high-density mounting semiconductor device is completed.
- FIG. 3 is a plan view showing a connection structure as a second specific example of the semiconductor device using the conductive adhesive in the second embodiment of the present invention, and is a connection electric power on a substrate made of glass. It is a top view of the pole 1 ⁇ and the cured conductive adhesive 1 8.
- connection electrode 1 7 is made of ITO with a thickness of 0.2 m, and the pitch dimension of the connection electrode 1 7 in the left-right direction in Fig. 3 is 150 ii m, and the connection electrode 1 The size of 7 is 1 OO wm square, and the clearance dimension between the connection electrode 1 7 and the connection electrode 1 7 is 50 um.
- Two flow prevention materials 2 2 are formed with a width dimension of 5 m and a spacing dimension of two flow prevention materials 2 2 of 5 m.
- Example 1 shown in Fig. 2 a single flow-preventing material may be used, but since ITO has conductivity, the amount of all conductive adhesives 18 formed increases, and all conductivity. When the size of the adhesive 18 becomes large, on the contrary, the short circuit between the connecting electrodes 17 increases, so a gap is opened in the center to form a set of two.
- a transparent conductive film such as ITO is formed on the entire surface of a substrate made of glass by using a spacing method or a vacuum vapor deposition method. After that, a photo-etching process is performed to form a set of two flow prevention materials 2 2 and a connection electrode 1 Iota, which are insulated at the center.
- connection electrode 17 In the process of forming the connection electrode 17 by forming a pattern of the flow prevention material 2 2 on the photomask for forming the connection electrode 1 7, at the same time, a set of two flow prevention materials 2 2 is also a transparent conductive film. Can be formed using.
- the manufacturing process is the same as usual, and there is no effect on the manufacturing cost. Since the ITO used in Example 2 is a low resistance type, the thickness is about 0.251 111, but the spread-suppressing curing of the conductive adhesive 18 was confirmed, and the conductivity indicated by the arrow 25 In the part where the amount of the adhesive adhesive 1 8 formed was large, the flow prevention material 2 2 suppresses the spread to the right, and the conductive adhesive 1 8 and the adjacent connection electrode 1 7 are prevented from being short-circuited. be able to.
- connection electrode 1 7 pitch dimension 150 um it is possible to connect with a high connection yield.
- Example 2 the high-density mounting with a force pitch dimension of 100 m, in which the pitch dimension of the connection electrode 17 is 150 m, also increases the size of the connection electrode 17 to 50 to 60 um, preventing flow. Connection is possible by setting the size of the material 2 2 to 5 to 1 O tt m.
- the protruding electrodes of the semiconductor device and the connection electrodes arranged on the substrate made of glass were connected using a conductive adhesive, but they were provided in the semiconductor device. Regardless of whether the protruding electrode made of solder or the connection electrode arranged on the printed circuit board or the flexible printed circuit board is connected by solder melting, it is possible to provide a solder flow prevention material to improve the connection stability. ..
- a protruding electrode is formed on the connection pad on the semiconductor device by using soldering.
- connection electrode on the substrate is preferably gold or soldered on the copper wiring, and the solder flow prevention material is also made of copper, which is the same material as the connection electrode, and is centered as in Example 2. It is preferable that the shape is a pair of two with a gap between them.
- solder flow preventive material with a photosensitive organic insulating material used for an insulating coating on the surface of a pudding substrate or a flexible printed circuit board.
- connection structure of the semiconductor device according to the present invention is conductive. Since the show between adjacent connection electrodes can be prevented by adhesive or solder, high-density connection with a connection electrode pitch dimension of 150 m or less is possible, and the connection yield is improved. Furthermore, even if the conductive adhesive and solder are formed so as to overlap with each other due to the thin insulating film on the connection electrodes, the adjacent connection electrodes are not completely shown, and they are not detected as defective and are considered as good products. In the shipped product, the insulation film may be broken during driving, which may cause a show. However, in the connection structure of the semiconductor device according to the present invention, the conductive adhesive or solder overlaps on the connection electrode. It also has the effect of improving long-term connection stability because it does not occur.
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94912071A EP0645807B1 (en) | 1993-04-08 | 1994-04-07 | Semiconductor device |
JP06522972A JP3083845B2 (ja) | 1993-04-08 | 1994-04-07 | 半導体装置 |
US08/347,352 US5525838A (en) | 1993-04-08 | 1994-04-07 | Semiconductor device with flow preventing member |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2351593 | 1993-04-08 | ||
JP5/23515U | 1993-04-08 |
Publications (1)
Publication Number | Publication Date |
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WO1994024699A1 true WO1994024699A1 (en) | 1994-10-27 |
Family
ID=12112593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP1994/000586 WO1994024699A1 (en) | 1993-04-08 | 1994-04-07 | Semiconductor device |
Country Status (4)
Country | Link |
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US (1) | US5525838A (ja) |
EP (1) | EP0645807B1 (ja) |
JP (1) | JP3083845B2 (ja) |
WO (1) | WO1994024699A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5767580A (en) * | 1993-04-30 | 1998-06-16 | Lsi Logic Corporation | Systems having shaped, self-aligning micro-bump structures |
GB9415108D0 (en) * | 1994-07-27 | 1994-09-14 | Smiths Industries Plc | Electronic assemblies and methods of treatment |
US5539153A (en) * | 1994-08-08 | 1996-07-23 | Hewlett-Packard Company | Method of bumping substrates by contained paste deposition |
DE19548046C2 (de) * | 1995-12-21 | 1998-01-15 | Siemens Matsushita Components | Verfahren zur Herstellung von für eine Flip-Chip-Montage geeigneten Kontakten von elektrischen Bauelementen |
DE19639934A1 (de) * | 1996-09-27 | 1998-04-09 | Siemens Ag | Verfahren zur Flipchip-Kontaktierung eines Halbleiterchips mit geringer Anschlußzahl |
US6376051B1 (en) | 1999-03-10 | 2002-04-23 | Matsushita Electric Industrial Co., Ltd. | Mounting structure for an electronic component and method for producing the same |
US7358618B2 (en) * | 2002-07-15 | 2008-04-15 | Rohm Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2007300488A (ja) * | 2006-05-01 | 2007-11-15 | Alps Electric Co Ltd | カメラモジュール |
US11139282B2 (en) * | 2018-07-26 | 2021-10-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package structure and method for manufacturing the same |
USD926053S1 (en) * | 2019-11-27 | 2021-07-27 | Joojoomee Inc. | Watch |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0437146A (ja) * | 1990-06-01 | 1992-02-07 | Oki Electric Ind Co Ltd | 液晶表示装置の半導体チップの実装方法 |
JPH0499537U (ja) * | 1991-01-23 | 1992-08-27 | ||
JPH04273464A (ja) * | 1991-02-28 | 1992-09-29 | Furukawa Electric Co Ltd:The | 半導体チップのマウント方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4859808A (en) * | 1988-06-28 | 1989-08-22 | Delco Electronics Corporation | Electrical conductor having unique solder dam configuration |
DE3824008A1 (de) * | 1988-07-15 | 1990-01-25 | Contraves Ag | Elektronische schaltung sowie verfahren zu deren herstellung |
US5074947A (en) * | 1989-12-18 | 1991-12-24 | Epoxy Technology, Inc. | Flip chip technology using electrically conductive polymers and dielectrics |
WO1993019487A1 (en) * | 1992-03-24 | 1993-09-30 | Unisys Corporation | Integrated circuit module having microscopic self-alignment features |
-
1994
- 1994-04-07 EP EP94912071A patent/EP0645807B1/en not_active Expired - Lifetime
- 1994-04-07 US US08/347,352 patent/US5525838A/en not_active Expired - Lifetime
- 1994-04-07 JP JP06522972A patent/JP3083845B2/ja not_active Expired - Fee Related
- 1994-04-07 WO PCT/JP1994/000586 patent/WO1994024699A1/ja active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0437146A (ja) * | 1990-06-01 | 1992-02-07 | Oki Electric Ind Co Ltd | 液晶表示装置の半導体チップの実装方法 |
JPH0499537U (ja) * | 1991-01-23 | 1992-08-27 | ||
JPH04273464A (ja) * | 1991-02-28 | 1992-09-29 | Furukawa Electric Co Ltd:The | 半導体チップのマウント方法 |
Non-Patent Citations (1)
Title |
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See also references of EP0645807A4 * |
Also Published As
Publication number | Publication date |
---|---|
EP0645807A1 (en) | 1995-03-29 |
US5525838A (en) | 1996-06-11 |
EP0645807B1 (en) | 2003-06-25 |
JP3083845B2 (ja) | 2000-09-04 |
EP0645807A4 (en) | 1997-10-08 |
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