WO1988007206A1 - Detecteur a circuit d'evaluation integre - Google Patents

Detecteur a circuit d'evaluation integre Download PDF

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Publication number
WO1988007206A1
WO1988007206A1 PCT/DE1988/000088 DE8800088W WO8807206A1 WO 1988007206 A1 WO1988007206 A1 WO 1988007206A1 DE 8800088 W DE8800088 W DE 8800088W WO 8807206 A1 WO8807206 A1 WO 8807206A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
sensor
circuit
insulating layer
sensor element
Prior art date
Application number
PCT/DE1988/000088
Other languages
German (de)
English (en)
Inventor
Manfred MÖLLENDORF
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO1988007206A1 publication Critical patent/WO1988007206A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Definitions

  • the invention is based on a sensor of the type of the main claim.
  • a sensor of this type is already known / in which the receiving part of the sensor containing the sensor element is part of the connection metallization of the evaluation circuit monolithically integrated in the single-crystal semiconductor wafer.
  • this sensor has the disadvantage that, because of the inevitable space requirement for the receiving part containing the sensor element, additional chip area is required for this receiving part.
  • the sensor according to the invention with the characterizing features of the main claim has the advantage over the prior art that no additional chip area is required for the receiving part containing the sensor element, since the receiving part is arranged above the monolithically integrated evaluation circuit. If necessary, a receiving part with a large number of individual sensor elements can therefore be applied to the second insulating plate. egg- Further advantages result from the subclaims in conjunction with the following description of an exemplary embodiment shown in the drawing.
  • FIG. 1 shows a partial section through a sensor according to the invention
  • 10 denotes a single-crystalline semiconductor wafer which, for example, consists of silicon.
  • the circuit elements of the evaluation circuit for the measurement signal picked up by the sensor are monolithically integrated in the form of zones of different conductivity types.
  • the left part of the section contains a vertical npn transistor, the right part an ohmic resistor, which consists of a zone with p-conductivity.
  • conductor tracks 11 made of aluminum are used for connection metallization, which is connected to that shown in FIG.
  • the layer 12 consists of silicon dioxide or silicon nitride, the conductor tracks
  • a 1 to 10 .mu.m thick second insulating layer 13 is applied to the upper side of the semiconductor wafer 10 provided with the first insulating layer 12 and the conductor tracks 11 of the connection metallization / which can consist of polyimide lacquer or of photoresist.
  • the insulating layer 13 can be constructed from a plurality of layers lying one above the other.
  • the second insulating layer 13 serves as a leveling layer and as a carrier for the thin-layer circuit, which contains the receiving part of the sensor.
  • FIG. 1 shows two flat sensor elements 14a, 14b and conductor tracks 15a, 15b, 15c of the receiving part.
  • the receiving part can form a half-bridge circuit or a Wheatstone bridge circuit.
  • the sensor elements 14a, 14b are designed as magnetically sensitive elements and can consist of a nickel-iron alloy or of a nickel-cobalt alloy or of an amorphous ferromagnetic alloy.
  • the strip conductors 15a, 15b, 15c are made of aluminum or be ⁇ , which may also contain Beimengun g s of Ti, Cr, Mo or W Al-Si alloys. They can also be built up from a multiple layer, consisting of an adhesive layer, intermediate layer (diffusion barrier layer) and cover layer (for example Pd-Si, Ti, Au). It is advisable to produce the conductor tracks 11 and 15a, 15b, 15c from the same materials.
  • FIG. 1 a recess A is shown in the second insulating layer 13, within which the conductor track 15c of the thin-film circuit is led to the conductor track 11a of the connection metallization of the monolithically integrated evaluation circuit and thus an electrically conductive contact between the two ⁇ the conductor tracks 15c and 11a is produced.
  • a protective layer 18 which may consist of silicon dioxide, silicon nitride, aluminum oxide, polyimide lacquer or photoresist.
  • FIGS. 2a to 2d show the sensor according to FIG. 1, which is being manufactured, in the various process steps to be carried out according to the invention.
  • FIG. 2a shows a partial section through the monolithically integrated evaluation circuit after completion of all semiconductor processes, but before integration with the thin-film circuit.
  • the same designations as in FIG. 1 are used here.
  • the second insulating layer 13 which acts as a leveling layer, is first applied as a continuous layer to the top side of the semiconductor wafer 10 provided with the first insulating layer 12 and the connection metallization 11.
  • the leveling layer 13 on the one hand forms a protective layer for the underlying circuit, on the other hand it represents an excellent working basis for the following thin-film processes.
  • the leveling layer 13 is structured with the aid of photoresist processes and thereby at least one recess A, which leads to an underlying conductor track of the evaluation circuit , exposed.
  • the photoresist is removed, followed by an aftertreatment, in particular a heat treatment, in which the leveling layer 13 according to FIG. 2b is flattened in the vicinity of the recess A in such a way that its thickness towards the recess A gradually becomes zero reduced.
  • FIG. 2c also shows a structured layer 16a, 16b made of photoresist, which is used for the subsequent structuring of the continuous sensor layer 14 underneath. This structuring is accomplished by etching and leads to the two sensor elements 14a and 14b already shown in FIG. 1, which are also shown in FIG. 2d.
  • the arrangement provided with the two structured sensor elements 14a and 14b is vapor-coated with a continuous, electrically highly conductive layer 15, the materials that come into consideration for the layer 15 are those that are used above for the Conductor tracks 15a, 15b, 15c are specified.
  • the previous structuring of the second insulating layer 13 has the result that the continuous, electrically highly conductive layer 15 comes to lie in the region of the recess A on the conductor track 11a of the connection metallization of the monolithically integrated evaluation circuit and thus electrically is conductively connected.
  • FIG. 2d also shows a structured layer 17a, 17b, 17c made of photoresist, which is used for the subsequent structuring of the continuous, electrically conductive layer 15 underneath.
  • This structuring is accomplished by etching and leads to the conductor tracks 15a, 15b, 15c shown in FIG. 1, the conductor track 15c in the area of the recess A being dimensioned such that it extends over the entire area which the conductor track 11a there the connection metallization of the monolithically integrated evaluation circuit.
  • a protective layer 18 made of silicon dioxide, silicon nitride, aluminum oxide, polyimide lacquer or photoresist is finally applied to the arrangement shown in FIG.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Un détecteur comprend une partie réceptrice ayant au moins un élément détecteur (14a, 14b) et un circuit d'évaluation du signal de mesure capté par la partie réceptrice. Les éléments du circuit d'évaluation sont intégrés sous forme de zones à différents types de conductivité dans une plaquette semi-conductrice mono-cristalline (10). Des pistes conductrices (10) d'une métallisation de connexion agencées sur une surface principale de la plaquette semi-conductrice (10), sur une première couche isolante (12) appliquée sur celle-ci, et en contact avec les zones à différents types de conductivité des éléments du circuit, relient les éléments du circuit agencés dans la plaquette semi-conductrice (10). Au moins un élément détecteur (14a, 14b) et les lignes de connexion qui y conduisent sont plans. La partie réceptrice du détecteur forme un circuit à couche mince qui contient au moins un élément détecteur (14a, 14b), les lignes de connexion électriques avec au moins un élément détecteur formant les pistes conductrices (15a, 15b, 15c) du circuit à couche mince. Une deuxième couche isolante (13) ayant la forme d'une couche de nivellement appliquée sur la surface principale de la plaquette semi-conductrice (10) pourvue de la première couche isolante (12) et de la métallisation de connexion sert de support pour le circuit à couche mince. Une couche supplémentaire (18) protège contre des influences de l'environnement.
PCT/DE1988/000088 1987-03-20 1988-02-20 Detecteur a circuit d'evaluation integre WO1988007206A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3709286.3 1987-03-20
DE19873709286 DE3709286A1 (de) 1987-03-20 1987-03-20 Sensor

Publications (1)

Publication Number Publication Date
WO1988007206A1 true WO1988007206A1 (fr) 1988-09-22

Family

ID=6323653

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1988/000088 WO1988007206A1 (fr) 1987-03-20 1988-02-20 Detecteur a circuit d'evaluation integre

Country Status (2)

Country Link
DE (1) DE3709286A1 (fr)
WO (1) WO1988007206A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0379180A2 (fr) * 1989-01-18 1990-07-25 Nippondenso Co., Ltd. Dispositif à détection magnétique et dispositif à détection d'une quantité physique l'utilisant
US5686835A (en) * 1989-01-18 1997-11-11 Nippondenso Co., Ltd Physical quantity detection device for converting a physical quantity into a corresponding time interval

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3905613A1 (de) * 1989-02-23 1990-08-30 Fraunhofer Ges Forschung Magnetfelderfassungsvorrichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2064140A (en) * 1979-11-27 1981-06-10 Landis & Gyr Ag Measuring transducers for measuring magnetic fields
EP0111698A2 (fr) * 1982-11-22 1984-06-27 LGZ LANDIS & GYR ZUG AG Détecteur de champ magnétique

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2064140A (en) * 1979-11-27 1981-06-10 Landis & Gyr Ag Measuring transducers for measuring magnetic fields
EP0111698A2 (fr) * 1982-11-22 1984-06-27 LGZ LANDIS & GYR ZUG AG Détecteur de champ magnétique

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Extended Abstracts, Band 80-2, Oktober 1980, (Princeton, New Jersey, US), A.C. Adams et al.: "Planarization of phosphorus-doped silicon dioxide" *
Patent Abstracts of Japan, Band 8, Nr. 147 (P-285)(1584), 10. Juli 1984; & JP-A-5946564 (MITANI DENSHI KOGYO K.K.) 15. Marz 1984 *
Patent Abstracts of Japan, Band 8, Nr.173 (E-259)(1610), 9. August 1984; & JP-A-5967669 (YAMATAKE HONEYWELL K.K.) 17. April 1984 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0379180A2 (fr) * 1989-01-18 1990-07-25 Nippondenso Co., Ltd. Dispositif à détection magnétique et dispositif à détection d'une quantité physique l'utilisant
EP0379180A3 (fr) * 1989-01-18 1992-09-30 Nippondenso Co., Ltd. Dispositif à détection magnétique et dispositif à détection d'une quantité physique l'utilisant
US5359287A (en) * 1989-01-18 1994-10-25 Nippondenso Co., Ltd. Magnetic detecting circuit having magnetoresistance effective elements oriented in at least two different directions
US5686835A (en) * 1989-01-18 1997-11-11 Nippondenso Co., Ltd Physical quantity detection device for converting a physical quantity into a corresponding time interval

Also Published As

Publication number Publication date
DE3709286A1 (de) 1988-09-29

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