USD853979S1 - Reaction tube - Google Patents

Reaction tube Download PDF

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Publication number
USD853979S1
USD853979S1 US29/649,496 US201829649496F USD853979S US D853979 S1 USD853979 S1 US D853979S1 US 201829649496 F US201829649496 F US 201829649496F US D853979 S USD853979 S US D853979S
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US
United States
Prior art keywords
reaction tube
view
elevational view
ornamental design
reaction
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US29/649,496
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English (en)
Inventor
Toru Kagaya
Shinya EBATA
Yusaku OKAJIMA
Hiroaki Hiramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
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Kokusai Electric Corp
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Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Assigned to HITACHI KOKUSAI ELECTRIC INC. reassignment HITACHI KOKUSAI ELECTRIC INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HIRAMATSU, HIROAKI, EBATA, SHINYA, KAGAYA, TORU, OKAJIMA, YUSAKU
Assigned to Kokusai Electric Corporation reassignment Kokusai Electric Corporation ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HITACHI KOKUSAI ELECTRIC INC.
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Publication of USD853979S1 publication Critical patent/USD853979S1/en
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US29/649,496 2017-12-27 2018-05-30 Reaction tube Active USD853979S1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-029309 2017-02-20
JPD2017-29309F JP1605982S (enrdf_load_stackoverflow) 2017-12-27 2017-12-27

Publications (1)

Publication Number Publication Date
USD853979S1 true USD853979S1 (en) 2019-07-16

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ID=62239112

Family Applications (1)

Application Number Title Priority Date Filing Date
US29/649,496 Active USD853979S1 (en) 2017-12-27 2018-05-30 Reaction tube

Country Status (3)

Country Link
US (1) USD853979S1 (enrdf_load_stackoverflow)
JP (1) JP1605982S (enrdf_load_stackoverflow)
TW (1) TWD200073S (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD901406S1 (en) * 2019-03-20 2020-11-10 Kokusai Electric Corporation Inner tube of reactor for semiconductor fabrication
USD907593S1 (en) * 2017-01-20 2021-01-12 Hitachi High-Tech Corporation Discharge chamber for a plasma processing apparatus
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube
USD940669S1 (en) * 2018-11-19 2022-01-11 Kokusai Electric Corporation Boat for substrate processing apparatus
USD986826S1 (en) * 2020-03-10 2023-05-23 Kokusai Electric Corporation Reaction tube
USD1019582S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019583S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019581S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1053156S1 (en) * 2022-03-15 2024-12-03 Kokusai Electric Corporation Furnace for substrate processing apparatus
USD1070797S1 (en) * 2022-03-15 2025-04-15 Kokusai Electric Corporation Furnace for substrate processing apparatus

Citations (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950870A (en) * 1987-11-21 1990-08-21 Tel Sagami Limited Heat-treating apparatus
US5618349A (en) * 1993-07-24 1997-04-08 Yamaha Corporation Thermal treatment with enhanced intra-wafer, intra-and inter-batch uniformity
USD404368S (en) * 1997-08-20 1999-01-19 Tokyo Electron Limited Outer tube for use in a semiconductor wafer heat processing apparatus
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
US5968593A (en) * 1995-03-20 1999-10-19 Kokusai Electric Co., Ltd. Semiconductor manufacturing apparatus
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
US6251189B1 (en) * 1999-02-18 2001-06-26 Kokusai Electric Co., Ltd. Substrate processing apparatus and substrate processing method
US20010050054A1 (en) * 2000-03-17 2001-12-13 Samsung Electronics Co., Ltd. Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
US20020014483A1 (en) * 2000-07-06 2002-02-07 Fujio Suzuki Batch type heat treatment system, method for controlling same, and heat treatment method
USD521464S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
USD521465S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
US7311520B2 (en) * 2002-09-24 2007-12-25 Tokyo Electron Limited Heat treatment apparatus
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD590359S1 (en) * 2006-02-20 2009-04-14 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers or the like
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
USD611013S1 (en) * 2008-03-28 2010-03-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD618638S1 (en) * 2008-05-09 2010-06-29 Hitachi Kokusai Electric, Inc. Reaction tube
USD698641S1 (en) * 2013-06-12 2014-02-04 Target Brands, Inc. Display fixture with cylindrical container
USD711843S1 (en) * 2013-06-28 2014-08-26 Hitachi Kokusai Electric Inc. Reaction tube
USD719114S1 (en) * 2013-06-28 2014-12-09 Hitachi Kokusai Electric Inc. Reaction tube
USD720308S1 (en) * 2011-11-18 2014-12-30 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD724551S1 (en) * 2011-11-18 2015-03-17 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD725055S1 (en) * 2013-06-28 2015-03-24 Hitachi Kokusai Electric Inc. Reaction tube
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube
US9460946B2 (en) * 2010-07-09 2016-10-04 Hitachi Kokusai Electric Inc. Substrate processing apparatus and heating equipment
USD770993S1 (en) * 2015-09-04 2016-11-08 Hitachi Kokusai Electric Inc. Reaction tube
USD772824S1 (en) * 2015-02-25 2016-11-29 Hitachi Kokusai Electric Inc. Reaction tube
USD778458S1 (en) * 2015-02-23 2017-02-07 Hitachi Kokusai Electric Inc. Reaction tube
USD778457S1 (en) * 2015-02-23 2017-02-07 Hitachi Kokusai Electric Inc. Reaction tube
USD791090S1 (en) * 2015-09-04 2017-07-04 Hitachi Kokusai Electric Inc. Reaction tube
US9748125B2 (en) * 2012-01-31 2017-08-29 Applied Materials, Inc. Continuous substrate processing system
USD800080S1 (en) * 2016-03-30 2017-10-17 Tokyo Electron Limited Reactor tube for semiconductor production devices

Patent Citations (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950870A (en) * 1987-11-21 1990-08-21 Tel Sagami Limited Heat-treating apparatus
US5618349A (en) * 1993-07-24 1997-04-08 Yamaha Corporation Thermal treatment with enhanced intra-wafer, intra-and inter-batch uniformity
US5968593A (en) * 1995-03-20 1999-10-19 Kokusai Electric Co., Ltd. Semiconductor manufacturing apparatus
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD404368S (en) * 1997-08-20 1999-01-19 Tokyo Electron Limited Outer tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
US6251189B1 (en) * 1999-02-18 2001-06-26 Kokusai Electric Co., Ltd. Substrate processing apparatus and substrate processing method
US20010050054A1 (en) * 2000-03-17 2001-12-13 Samsung Electronics Co., Ltd. Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
US20020014483A1 (en) * 2000-07-06 2002-02-07 Fujio Suzuki Batch type heat treatment system, method for controlling same, and heat treatment method
US7311520B2 (en) * 2002-09-24 2007-12-25 Tokyo Electron Limited Heat treatment apparatus
USD521464S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
USD521465S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
USD590359S1 (en) * 2006-02-20 2009-04-14 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers or the like
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD611013S1 (en) * 2008-03-28 2010-03-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD618638S1 (en) * 2008-05-09 2010-06-29 Hitachi Kokusai Electric, Inc. Reaction tube
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
US9460946B2 (en) * 2010-07-09 2016-10-04 Hitachi Kokusai Electric Inc. Substrate processing apparatus and heating equipment
USD720308S1 (en) * 2011-11-18 2014-12-30 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD724551S1 (en) * 2011-11-18 2015-03-17 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
US9748125B2 (en) * 2012-01-31 2017-08-29 Applied Materials, Inc. Continuous substrate processing system
USD698641S1 (en) * 2013-06-12 2014-02-04 Target Brands, Inc. Display fixture with cylindrical container
USD725055S1 (en) * 2013-06-28 2015-03-24 Hitachi Kokusai Electric Inc. Reaction tube
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube
USD719114S1 (en) * 2013-06-28 2014-12-09 Hitachi Kokusai Electric Inc. Reaction tube
USD711843S1 (en) * 2013-06-28 2014-08-26 Hitachi Kokusai Electric Inc. Reaction tube
USD778458S1 (en) * 2015-02-23 2017-02-07 Hitachi Kokusai Electric Inc. Reaction tube
USD778457S1 (en) * 2015-02-23 2017-02-07 Hitachi Kokusai Electric Inc. Reaction tube
USD772824S1 (en) * 2015-02-25 2016-11-29 Hitachi Kokusai Electric Inc. Reaction tube
USD770993S1 (en) * 2015-09-04 2016-11-08 Hitachi Kokusai Electric Inc. Reaction tube
USD791090S1 (en) * 2015-09-04 2017-07-04 Hitachi Kokusai Electric Inc. Reaction tube
USD800080S1 (en) * 2016-03-30 2017-10-17 Tokyo Electron Limited Reactor tube for semiconductor production devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Design U.S. Appl. No. 29/635,262, filed Jan. 30, 2018.

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD907593S1 (en) * 2017-01-20 2021-01-12 Hitachi High-Tech Corporation Discharge chamber for a plasma processing apparatus
USD940669S1 (en) * 2018-11-19 2022-01-11 Kokusai Electric Corporation Boat for substrate processing apparatus
USD901406S1 (en) * 2019-03-20 2020-11-10 Kokusai Electric Corporation Inner tube of reactor for semiconductor fabrication
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube
USD986826S1 (en) * 2020-03-10 2023-05-23 Kokusai Electric Corporation Reaction tube
USD1053156S1 (en) * 2022-03-15 2024-12-03 Kokusai Electric Corporation Furnace for substrate processing apparatus
USD1070797S1 (en) * 2022-03-15 2025-04-15 Kokusai Electric Corporation Furnace for substrate processing apparatus
USD1019582S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019583S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019581S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment

Also Published As

Publication number Publication date
JP1605982S (enrdf_load_stackoverflow) 2021-05-31
TWD200073S (zh) 2019-10-01

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