US9271400B2 - Electronic component and manufacturing method therefor - Google Patents

Electronic component and manufacturing method therefor Download PDF

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Publication number
US9271400B2
US9271400B2 US14/016,415 US201314016415A US9271400B2 US 9271400 B2 US9271400 B2 US 9271400B2 US 201314016415 A US201314016415 A US 201314016415A US 9271400 B2 US9271400 B2 US 9271400B2
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Prior art keywords
supporting body
electronic component
substrate
protrusion
frame
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US20140003017A1 (en
Inventor
Seiji Kai
Shintaro Nakatani
Mitsuyoshi Hira
Takao Mukai
Hisashi Yamazaki
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Assigned to MURATA MANUFACTURING CO., LTD. reassignment MURATA MANUFACTURING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YAMAZAKI, HISASHI, HIRA, MITSUYOSHI, MUKAI, TAKAO, NAKATANI, SHINTARO, KAI, SEIJI
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/0999—Circuit printed on or in housing, e.g. housing as PCB; Circuit printed on the case of a component; PCB affixed to housing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10083—Electromechanical or electro-acoustic component, e.g. microphone
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2018—Presence of a frame in a printed circuit or printed circuit assembly
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147—Assembling terminal to base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Definitions

  • the present invention relates to an electronic component in which a substrate and a lid member are joined to each other via a frame-shaped supporting body including a heat-curable resin, and relates to a manufacturing method therefor.
  • a surface acoustic wave filter device for example, a package structure having a cavity is adopted, in which a surface acoustic wave filter element faces the cavity. Consequently, in order to make progress in size reduction of such a device, development of wafer level chip size packaging (WLCSP) has been progressing.
  • WLCSP wafer level chip size packaging
  • the size of the planar shape of a package is the same as that of a surface acoustic wave element chip.
  • a surface acoustic wave device 1001 described in Japanese Unexamined Patent Application Publication No. 2002-532934 includes a plate-shaped surface acoustic wave element 1002 .
  • the surface acoustic wave element 1002 includes a piezoelectric substrate 1003 .
  • Functional units 1004 including interdigital transducer (IDT), electrodes are formed on the upper surface of the piezoelectric substrate 1003 .
  • a rectangular frame-shaped supporting body 1005 is formed on the upper surface of the surface acoustic wave element 1002 .
  • the supporting body 1005 is arranged so as to surround the functional units 1004 .
  • a lid member 1006 is fixed to the top of the supporting body 1005 such that a cavity that the functional units 1004 face is sealed.
  • Penetrating electrodes 1007 are formed so as to penetrate through the frame-shaped supporting body 1005 and the lid member 1006 .
  • Outer terminals 1008 are formed on the upper ends of the penetrating electrodes 1007 .
  • the outer peripheries of the supporting body 1005 and the lid member 1006 have the same dimensions as the outer periphery of the surface acoustic wave element 1002 . Therefore, a reduction in size can be achieved.
  • the wider the cavity which the functional units 1004 face becomes the greater the number of functional units that can be arranged in the cavity. If the size of the cavity can be increased, size reduction of the surface acoustic wave device 1001 can also progress.
  • the width of the frame-shaped supporting body 1005 may be decreased.
  • the frame-shaped supporting body 1005 needs to have a certain width in order to allow the penetrating electrodes 1007 to be formed. In this case, the area of the cavity is decreased.
  • the width of the supporting body 1005 is decreased, the cavity cannot be sufficiently tightly sealed. Accordingly, in cases such as where there is a change in temperature, there is a risk of leak defects occurring. Consequently, there has been a problem in that the environmental resistance has been degraded.
  • Preferred embodiments of the present invention provide an electronic component including a package structure including a cavity, in which progress can be made in size reduction, is capable of suppressing or preventing leak defects and is therefore excellent in terms of environmental resistance.
  • An electronic component includes a substrate, a functional unit located on one main surface of the substrate, a frame-shaped supporting body including a heat-curable resin that is arranged on the one main surface of the substrate so as to surround the functional unit and so as to be separated from the periphery of the substrate on the inner side, and a lid member that is fixed to the supporting body so as to seal an opening of the supporting body.
  • the frame-shaped supporting body includes a frame-shaped supporting body main body, a first protrusion that protrudes toward the inside from the supporting body main body and a second protrusion that is provided at a portion in which the supporting body main body and the first protrusion are continuous with each other so as to protrude toward the outside from the supporting body main body.
  • the electronic component further includes a penetrating electrode that is electrically connected to the functional unit and is arranged so as to penetrate through the first protrusion and the lid member, and further includes an outer terminal that is connected to an upper portion of the penetrating electrode.
  • a penetrating electrode that is electrically connected to the functional unit and is arranged so as to penetrate through the first protrusion and the lid member, and further includes an outer terminal that is connected to an upper portion of the penetrating electrode.
  • the penetrating electrode is preferably an under bump metal portion and the outer terminal is preferably a bump. In this case, by utilizing the first protrusion, an under bump metal portion can be provided and the bump can be joined to the top of the under bump metal portion.
  • the functional unit located on the substrate includes at least one IDT electrode and is a surface acoustic wave device.
  • the functional unit located on the substrate includes at least one IDT electrode and is a surface acoustic wave device.
  • a method of manufacturing an electronic component includes the following steps: a step of preparing a substrate on one main surface of which a functional unit is formed, a step of providing a heat-curable resin on the one main surface of the substrate so as to surround the functional unit on the one main surface of the substrate and so as to contain the frame-shaped supporting body main body, which is separated from the periphery of the substrate on the inner side, and the first and second protrusions, a step of stacking a lid member to form a frame-shaped heat-curable resin on the one main surface side of the substrate with the heat-curable resin therebetween, a step of completing the frame-shaped supporting body, and joining the frame-shaped supporting body, the one main surface of the substrate, and the lid member to one another by curing the heat-curable resin.
  • the method further includes, after the step of completing the frame-shaped supporting body, a step of forming a through hole so as to penetrate through the first protrusion of the frame-shaped supporting body and the lid member, a step of forming a penetrating electrode in the through hole, and a step of joining an outer terminal to an upper end of the penetrating electrode.
  • a penetrating electrode can be formed by utilizing the first protrusion that the frame-shaped supporting body main body is provided with.
  • an under bump metal portion be formed as the penetrating electrode and a bump be formed as the outer terminal.
  • an under bump metal portion can be formed by utilizing the first protrusion, and therefore the bump can be easily formed on top of the under bump metal portion.
  • a surface acoustic wave substrate is prepared on which a surface acoustic wave element functional unit is formed as the substrate on which the functional unit is formed, and thus a surface acoustic wave device is provided.
  • a surface acoustic wave device it is possible to provide a surface acoustic wave device in which progress can be made in size reduction and in which it is unlikely that leak defects will occur.
  • an electronic component of various preferred embodiments of the present invention at the time of forming the frame-shaped supporting body composed of a heat-curable resin, even if the frame-shaped supporting body becomes deformed due to curing shrinkage, since the second protrusion is provided at a portion at which the first protrusion is continuous with the supporting body main body, strain in the portion in which the first protrusion and the supporting body main body are continuous with each other can be suppressed or prevented. Consequently, the occurrence of gaps between the supporting body and the lid member can be suppressed or prevented and as a result, leak defects can be suppressed or prevented. Therefore, a compact electronic component can be provided in which leak defects are unlikely to occur and that is excellent in terms of environmental resistance.
  • FIGS. 1A and 1B are a front sectional view of a surface acoustic wave device, which is an example of an electronic component according to a preferred embodiment of the present invention and a bottom view of the structure of a portion that will form a single surface acoustic wave device prior to being divided from a mother piezoelectric substrate and from which a lid member has been removed.
  • FIG. 2A is a plan view of a surface acoustic wave element used in a preferred embodiment of the present invention
  • FIG. 2B is a schematic plan view in which electrode structures have been removed from the structure illustrated in FIG. 1B and illustrates only a frame-shaped supporting body.
  • FIGS. 3A to 3E are front sectional views for describing a method of manufacturing a surface acoustic wave device according to a preferred embodiment of the present invention.
  • FIGS. 4A to 4E are front sectional views for describing a method of manufacturing a surface acoustic wave device according to a preferred embodiment of the present invention.
  • FIG. 5 is a plan view illustrating a state in which electrodes of portions that will form a plurality of surface acoustic wave elements and frame-shaped supporting bodies have been formed on a mother wafer prepared using a manufacturing method of a preferred embodiment of the present invention.
  • FIG. 6 is a schematic plan view illustrating the directions of strain at the time of heat curing in a portion in which a frame-shaped supporting body and a first protrusion are continuous with each other.
  • FIG. 7 is a schematic plan view for describing the directions of strain in a first protrusion, a second protrusion and a frame-shaped supporting body main body in a portion in which a frame-shaped supporting body and the first protrusion are continuous with each other.
  • FIG. 8 is a schematic plan view illustrating only a frame-shaped supporting body of a surface acoustic wave device according to a modification of a preferred embodiment of the present invention.
  • FIG. 9 is a front sectional view illustrating an example of a surface acoustic wave device of the related art.
  • FIG. 1A is a front sectional view illustrating an electronic component 1 according to a preferred embodiment of the present invention.
  • the electronic component 1 preferably is a WLCSP type surface acoustic wave device.
  • the electronic component 1 includes a substrate 2 .
  • the substrate 2 preferably is a surface acoustic wave element substrate and includes a piezoelectric material.
  • a suitable piezoelectric material such as LiTaO 3 , LiNbO 3 , or quartz can be used, for example.
  • Functional units 3 are located on the lower surface of the substrate 2 .
  • the functional units 3 include IDT electrodes, reflectors, wiring and pad electrodes. Structures including metal materials and including such functional units include multilayer conductive films defined by Ti films and Al—Cu alloy films in the present preferred embodiment.
  • the metal structures located on the substrate 2 may be made of other metal materials. That is, a suitable metal material such as Al, Cu, Ti, Pt, Au, Ag, Ni, Cr, Pd or an alloy containing at least one of these metals can be used, for example.
  • a frame-shaped supporting body 4 is joined to the lower surface of the substrate 2 .
  • the frame-shaped supporting body 4 preferably has a rectangular or substantially rectangular frame-shaped configuration.
  • the frame-shaped supporting body 4 may have a frame-shaped configuration other than a rectangular or substantially rectangular frame-shaped configuration.
  • the supporting body 4 is preferably composed of a cured material of heat-curable resin.
  • a polyimide-based resin preferably is used as the heat-curable resin.
  • the supporting body 4 may be formed using another heat-curable resin, for example.
  • the supporting body 4 is preferably arranged so as to surround the functional units 3 .
  • a lid member 5 is located on the lower end of the supporting body 4 so as to close the opening of the supporting body 4 .
  • the lid member 5 preferably has a structure formed by stacking a first layer 5 a including an epoxy-based resin and a second layer 5 b including a polyimide-based resin.
  • the lid member 5 may be formed of a single material layer, for example.
  • the lid member 5 can be formed of a suitable insulating material other than the above-mentioned resins, for example.
  • pad electrodes 6 a and 6 b are located on the lower surface of the substrate 2 .
  • Protrusions 4 b and 4 b which will be described below, of the supporting body 4 are arranged so as to cover the pad electrodes 6 a and 6 b .
  • through holes are provided in the supporting body 4 . These through holes penetrate through not only the supporting body 4 but also through the lid member 5 .
  • Under bump metal portions 7 a and 7 b are provided as penetrating electrodes inside the through holes.
  • the under bump metal portions 7 a and 7 b have structures defined by a Ni layer and an Au layer being stacked one on top of the other in this preferred embodiment.
  • the materials that define the under bump metal portions 7 a and 7 b are not limited to the above-mentioned metals and suitable conductive materials similar to the materials that can be used to define the above-described metal structures can be used.
  • the under bump metal portions 7 a and 7 b may include a single metal.
  • the upper ends of the under bump metal portions 7 a and 7 b are joined to the pad electrodes 6 a and 6 b .
  • the lower ends of the under bump metal portions 7 a and 7 b are exposed at the lower surface of the lid member 5 .
  • Bumps 8 a and 8 b made of a Sn—Ag—Cu-based solder are arranged on the lower surface of the under bump metal portions 7 a and 7 b as outer terminals.
  • the planar shapes of the functional units 3 , the supporting body 4 , the under bump metal portions 7 a and 7 b and so forth of the electronic component 1 will be described with reference to FIG. 1B .
  • the electronic component 1 as illustrated in FIG. 5 , which will be referred to below, is obtained by forming the functional units and supporting bodies of a plurality of electronic components 1 on a mother substrate 2 A and then dividing the mother substrate 2 A.
  • FIG. 1B is a schematic bottom view of a portion of the mother substrate 2 A that corresponds to a single electronic device 1 .
  • a structure in which the lid member 5 and the bumps 8 a and 8 b illustrated in FIG. 1A are not provided is illustrated.
  • a feeder line 11 is provided around the outer periphery of the lower surface of a single substrate 2 in FIG. 1B . The feeder line 11 is ultimately removed when the mother substrate 2 A illustrated in FIG. 5 is divided. Alternatively, the feeder line 11 is not provided in the finally obtained electronic component 1 illustrated in FIG. 1A .
  • FIG. 1A is a front sectional view of the final electronic component 1 corresponding to the portion along the line A-A of FIG. 1B .
  • the feeder line 11 is provided along the outer periphery of the substrate 2 .
  • the feeder line 11 is preferably formed of the same metal as that with which the previously mentioned functional units 3 are formed. It is preferable that the feeder line 11 be formed of the same electrode material as the wiring and so forth included in the functional units 3 . Thus, the feeder line 11 can be formed at the same time as the wiring and so forth.
  • the supporting body 4 includes a rectangular or substantially rectangular frame-shaped supporting body main body 4 a .
  • the above-mentioned functional units 3 are provided in a region surrounded by the supporting body main body 4 a .
  • the functional units 3 in order to form a surface acoustic wave filter device, a plurality of longitudinally coupled resonator type surface acoustic wave filters 9 a and one-port-type surface acoustic wave resonators 9 b are provided.
  • the longitudinally coupled resonator type surface acoustic wave filters 9 a and one-port-type surface acoustic wave resonators 9 b are constructed by forming electrode structures such as IDT electrodes and reflectors on the substrate 2 in accordance with the functions thereof.
  • the longitudinally coupled resonator type surface acoustic wave filters 9 a and one-port-type surface acoustic wave resonators 9 b are electrically connected to each other via wiring electrodes 10 and define functional units 3 as surface acoustic wave filter devices.
  • the electrode structures of the functional units 3 are not particularly limited.
  • Pad electrodes 6 a to 6 g are provided to enable electrical connection to the outside so as to enable electrical connection to wiring electrodes 10 of the functional units 3 .
  • the pad electrodes 6 a to 6 g are indicated by broken lines in FIG. 1B .
  • this is because the pad electrodes 6 a and 6 b are covered by the first protrusions 4 b of the supporting body 4 .
  • the under bump metal portions 7 a and 7 b are provided in the first protrusions 4 b of the supporting body 4 , which cover the pad electrodes 6 a and 6 b.
  • the first protrusions 4 b of the supporting body 4 are located in portions where the pad electrodes 6 a and 6 b are provided as described above. More specifically, in portions in which the pad electrodes 6 a , 6 b , 6 c , 6 d and 6 g , among the pad electrodes 6 a to 6 g , which are provided at positions along the outer periphery of the substrate 2 , are disposed, the first protrusions 4 b are provided so as to protrude toward the inside from the outer periphery of the supporting body main body 4 a of the supporting body 4 , that is, toward the inside of the opening surrounded by the supporting body 4 .
  • the first protrusions 4 b are portions that cover the pad electrodes 6 a to 6 d , and 6 g and form through holes to define the under bump metal portions 7 a and 7 b . Therefore, in this preferred embodiment, the first protrusions 4 b preferably have a rectangular or substantially rectangular shape in plan view and are of a certain area.
  • FIG. 2A is a plan view illustrating a state in which the supporting body 4 , the under bump metal portions 7 a and 7 b and so forth have been removed from the structure illustrated in FIG. 1B . That is, FIG. 2A is a bottom view illustrating a structure in which the functional units 3 , the pad electrodes 6 a to 6 g and the feeder line 11 located on the substrate 2 are formed.
  • FIG. 2B is a plan view illustrating the supporting body 4 and supporting columns 12 a and 12 b , which include a heat curable resin and located on portions where the pad electrodes 6 e and 6 f are provided in FIG. 1B .
  • the supporting columns 12 a and 12 b are located on portions where the pad electrodes 6 e and 6 f are provided and have a cylindrical or substantially cylindrical shape.
  • through holes are provided in the supporting columns 12 a and 12 b . Under bump metal portions are provided inside the through holes.
  • a method has also been considered in which the first protrusions 4 b are not provided, when forming the portions in which the under bump metal portions 7 a and 7 b are formed in the supporting body 4 . That is, if the width of the supporting body 4 , that is, the width of the supporting body main body 4 a of the supporting body 4 is made large, the under bump metal portions can be provided at desired positions in the supporting body main body 4 a . However, in this structure, the area of the opening surrounded by the supporting body main body 4 a becomes smaller. Therefore, it becomes difficult to make progress in size reduction.
  • the width of the supporting body main body 4 a having a rectangular or substantially rectangular shape is made small and the first protrusions 4 b are provided inside the supporting body main body 4 a .
  • the area of the portion surrounded by the supporting body main body 4 a can be made large.
  • second protrusions 4 c are provided in addition to the first protrusions 4 b in order to prevent the occurrence of leak defects.
  • the second protrusions 4 c are provided in portions in which the first protrusions 4 b are provided in the supporting body 4 , so as to extend from the supporting body main body 4 a toward the side opposite to that of the first protrusions 4 b , that is, toward the outside.
  • FIG. 6 is a schematic view of the structure of a comparative example in which the first protrusions 4 b are continuous with the supporting body main body 4 a and the second protrusions are not provided.
  • the supporting body 4 is composed of a heat-curable resin and is heat cured
  • curing shrinkage occurs.
  • the directions of stress at this time are indicated by arrows E in FIG. 6 .
  • the first protrusions 4 b having a rectangular planar shape are deformed as the rectangular shape undergoes shrinkage.
  • curing shrinkage progresses such that the width thereof becomes smaller.
  • the second protrusions 4 c face in a direction toward the outside with respect to the supporting body main body 4 a , and the second protrusions 4 c do not necessarily have to be exactly formed at the positions illustrated in FIG. 7 .
  • one end portion of the second protrusion 4 c as illustrated by the one dot chain line D, may be shifted in a lateral direction from a position at which an edge 4 b 1 of the first protrusion 4 b is continuous with the supporting body main body 4 a .
  • strain is generated in a similar manner to stress illustrated by arrows C.
  • the second protrusions 4 c may be provided so as to protrude toward the outside from the supporting body main body 4 a in the vicinity of portions in which the first protrusions 4 b are continuous with the supporting body main body 4 a .
  • the planar shape of the second protrusions 4 c is not limited to a shape such as a rectangle.
  • the width of the frame-shaped supporting body main body 4 a preferably is about 20 ⁇ m, for example.
  • the first protrusions 4 b preferably have a square shape of approximately 116 ⁇ m ⁇ 116 ⁇ m, for example.
  • the protruding length of the second protrusions 4 c preferably is about 30 ⁇ m or more, for example. The protruding length is the length of the second protrusions 4 c in the direction in which the second protrusions 4 c protrude from the outer periphery of the supporting body main body 4 a toward the outside.
  • the protruding length is the protruding length of the second protrusions 4 c in portions orthogonal to the outer periphery of the supporting body main body 4 a .
  • the width of the supporting body main body 4 a , and the dimensions of the first and second protrusions 4 b and 4 c are not particularly limited.
  • the area and the shape of the second protrusions 4 c may be suitably set in accordance with the rate of curing shrinkage and the curing temperature of the heat-curable resin forming the supporting body 4 .
  • the mother substrate 2 A is prepared.
  • a plurality of the functional units 3 , the pad electrodes 6 a and 6 b , and so forth, and, although not illustrated in FIG. 3B , the feeder line 11 is formed on the mother substrate 2 A by using a thin film fine processing technology.
  • the feeder line 11 will be described below in detail.
  • a photosensitive epoxy-based resin is applied so as to cover the entirety of the upper surface of the mother substrate 2 A.
  • an epoxy-based resin layer 4 A is formed.
  • the epoxy-based resin layer 4 A is patterned using a photolithographic method.
  • the supporting body 4 is formed.
  • portions in which the first protrusions 4 b of the supporting body 4 are provided are illustrated, but the supporting body main body 4 a , the second protrusions 4 c , and the supporting columns 12 a and 12 b and so forth are also formed in the same process.
  • the epoxy-based resin has not yet been cured with heat.
  • FIG. 5 is a plan view of the mother substrate 2 A in a state where the process of FIG. 3D has been completed.
  • the above-mentioned feeder line 11 will be described with reference to FIG. 5 .
  • the feeder line 11 is formed in a region in which a plurality of electronic components included in the mother substrate 2 A are formed. In this preferred embodiment, a plurality of electronic components are formed in a matrix pattern. Therefore, the feeder line 11 preferably has a lattice-shaped configuration. The feeder line 11 is removed when a dicing process, which will be described below, is performed.
  • the thickness of the pad electrodes 6 a to 6 g is made to be larger than that of the other metal structures such as the IDT electrodes and wiring electrodes. Specifically, it is preferable that the thickness of the Al—Cu alloy be about 2.3 ⁇ m or more, for example.
  • the first and second layers 5 a and 5 b of the lid member 5 are stacked one on top of the other by laminating a heat-curable resin using a lamination process.
  • the opening surrounded by the supporting body 4 is closed.
  • the first layer 5 a be in a non-cured state and the second layer 5 b be in a cured state in advance.
  • the second layer 5 b is cured with heat or light, and such that warping of the lid member 5 caused by the cured second layer 5 b is suppressed or prevented.
  • the entire body is heated.
  • the supporting body 4 and the first layer 5 a are cured.
  • the first layer 5 a and the supporting body 4 are joined together and a cavity that the functional units 3 of the electronic component 1 face is formed.
  • the second protrusions 4 c have been provided and therefore it is not likely that deformation will occur in portions where the first protrusions 4 b and the supporting body main body 4 a are continuous with each other. Therefore, it is possible to form a cavity that is excellent in terms of sealability and in which it is unlikely that a leak defect will occur.
  • the supporting body 4 and the first layer 5 a are preferably cured in the same heat curing process. Consequently, the heat-curable resin forming the first layer 5 a and the heat-curable resin forming the supporting body 4 are preferably resins that are cured in the same temperature range. More preferably, it is preferable that the first layer 5 a and the supporting body 4 be formed of the same heat-curable resin. Thus, the supporting body 4 and the first layer 5 a can be cured by being heated in the same temperature range and the heating process can be simplified. In addition, when the same resin is used, the strength of the bond between the first layer 5 a and the supporting body 4 can be effectively increased.
  • through holes are formed so as to penetrate through the lid member 5 by using for example a laser process.
  • FIG. 4A a state is illustrated in which through holes are formed so as to penetrate through the lid member 5 , and furthermore the through holes are formed so as to also penetrate through the supporting body 4 by performing a laser process.
  • the pad electrodes 6 a and 6 b are exposed through the through holes.
  • the under bump metal portions 7 a and 7 b are formed in the through holes.
  • a Ni layer is formed in the through holes and then an Au layer is formed by electroplating.
  • the bumps 8 a and 8 b which are composed of solder and mentioned above, are formed on the under bump metal portions 7 a and 7 b.
  • the above-described manufacturing method is just an example of a method of manufacturing the electronic component 1 , and the electronic component 1 can be manufactured using another manufacturing method.
  • the second protrusions 4 c are provided, and as a result it is unlikely that gaps will occur, which would cause leak defects, between the supporting body 4 and the lid member 5 and between the supporting body 4 and the substrate 2 .
  • the electronic component 1 of the above-described preferred embodiment and an electronic component of a comparative example formed in the same manner except that the second protrusions 4 c were omitted from the structure of the present preferred embodiment were manufactured.
  • the percentage of leak defects in electronic components of the preferred embodiment and the comparative example were measured in a gross leak test. The result of the test for the comparative example was 1.56%. In contrast, in the example of a preferred embodiment of the present invention, the percentage of leak defects was 0.03% and therefore the percentage of leak defects was able to be lowered by a significant amount.
  • the first protrusions 4 b are provided in order to form the under bump metal portions 7 a and 7 b , but may instead be provided in order to simply reinforce the supporting body main body 4 a.
  • FIG. 8 is a schematic plan view of the frame-shaped supporting body 4 of a surface acoustic wave device according to a modification of a preferred embodiment of the present invention.
  • FIG. 8 corresponds to FIG. 2B , which illustrates a preferred embodiment of the present invention.
  • FIG. 8 portions the same as those in FIG. 2B are denoted by the same reference symbols.
  • the first protrusions 4 b are also provided inside the supporting body main body 4 a at corner portions of the frame-shaped supporting body 4 . Furthermore, in addition to the first protrusions 4 b , the second protrusions 4 c are provided. Thus, similarly to as in the case of the preferred embodiment illustrated in FIG. 2B , leak defects are prevented.
  • a first protrusion 4 b extends from one long edge of the supporting body main body 4 a so as to reach another long edge on the opposite side in the center of the length direction of the frame-shaped supporting body 4 . That is, the first protrusion 4 b is arranged so as to partition the space between the two long edges of the supporting body main body 4 a .
  • a transmission filter can be provided on one side of the first protrusion 4 b and a reception filter can be provided on the other side of the first protrusion 4 b functioning as a partition.
  • the first protrusion 4 b may be arranged so as to function as a partition that partitions the frame-shaped supporting body 4 .

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
US14/016,415 2011-03-28 2013-09-03 Electronic component and manufacturing method therefor Active 2032-09-23 US9271400B2 (en)

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JP6006086B2 (ja) * 2012-11-01 2016-10-12 太陽誘電株式会社 弾性波フィルタ及びモジュール
JP6044643B2 (ja) * 2012-12-05 2016-12-14 株式会社村田製作所 弾性波装置の製造方法及び弾性波装置
US9209380B2 (en) * 2013-03-08 2015-12-08 Triquint Semiconductor, Inc. Acoustic wave device
JP6179593B2 (ja) 2013-05-27 2017-08-16 株式会社村田製作所 弾性表面波装置
JP2015046870A (ja) * 2013-07-31 2015-03-12 株式会社村田製作所 弾性波装置の製造方法
JP5713224B1 (ja) * 2013-08-20 2015-05-07 株式会社村田製作所 弾性表面波デバイス及びその製造方法
JP6409785B2 (ja) * 2013-12-27 2018-10-24 株式会社村田製作所 弾性波装置及びその製造方法
WO2016063738A1 (fr) 2014-10-20 2016-04-28 株式会社村田製作所 Dispositif à ondes élastiques et son procédé de fabrication
CN107251428B (zh) 2015-03-27 2020-10-23 株式会社村田制作所 弹性波装置、通信模块设备以及弹性波装置的制造方法
JP6365435B2 (ja) 2015-06-24 2018-08-01 株式会社村田製作所 弾性波装置
JP6350510B2 (ja) 2015-12-24 2018-07-04 株式会社村田製作所 弾性表面波装置
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JPWO2012132147A1 (ja) 2014-07-24
CN103460599A (zh) 2013-12-18
CN103460599B (zh) 2016-08-17
JP5141852B2 (ja) 2013-02-13
DE112011105113T5 (de) 2014-01-02
US20140003017A1 (en) 2014-01-02
WO2012132147A1 (fr) 2012-10-04
DE112011105113B4 (de) 2018-03-01

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