US9018534B2 - Method of manufacturing power module substrate and power module substrate - Google Patents

Method of manufacturing power module substrate and power module substrate Download PDF

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US9018534B2
US9018534B2 US13/447,483 US201213447483A US9018534B2 US 9018534 B2 US9018534 B2 US 9018534B2 US 201213447483 A US201213447483 A US 201213447483A US 9018534 B2 US9018534 B2 US 9018534B2
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metal plates
power module
ceramic
module substrate
ceramic substrates
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US20120267149A1 (en
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Sotaro Oi
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954—Coating
    • H01L2224/29599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Definitions

  • the present invention relates to a method of manufacturing a power module substrate used in a semiconductor apparatus that controls a large electric current and a large voltage and a power module substrate.
  • a power module having a configuration in which a metal plate that forms a conductive pattern layer is laminated on one surface of a ceramic substrate, electronic parts, such as semiconductor chips, are soldered on the conductive pattern layer, a metal plate that becomes a heat dissipation layer is formed on the other surface of the ceramic substrate, and a heat sink is bonded to the heat dissipation layer is known.
  • a metal plate is bonded to a surface of a ceramic substrate through brazing.
  • heating is carried out in a state in which a brazing foil is temporarily fixed to a surface of a ceramic substrate through the surface tension of a volatile organic medium, and a conductive pattern layer punched out from a base material is temporarily fixed to the surface of the brazing foil so as to volatilize the volatile organic medium, and the resultant is pressurized in the thickness direction, thereby forming a power module substrate having a metal plate and the ceramic substrate brazed thereto.
  • a plurality of ceramic substrates having penetration holes as via holes formed therein and aluminum metal plates interposed between the ceramic substrates are provided in a multilayer structure.
  • the metal plates are formed by feeding and solidifying molten metal between the ceramic substrates that are laminated in a casting mold, and therefore the molten metal is fed and solidified in the penetration holes that are formed in the ceramic substrates so that the metal plates on both sides of the ceramic substrates are electrically connected to each other through the metal in the penetration holes.
  • the invention has been made in consideration of the above circumstances, and an object of the invention is to provide a method of manufacturing a power module substrate and a power module substrate in which multilayers of ceramic substrates and metal plates are laminated, the metal plates on both sides of the ceramic substrates can be in a connected state, and, furthermore, separation between the ceramic substrate and the metal plate, cracking in the ceramic substrates, and the like do not easily arise.
  • the ceramic substrate is a sintered part, and has a significantly large dimensional tolerance compared to the metallic members due to the influence of shrinkage during sintering.
  • the invention has employed the following solutions.
  • the method of manufacturing a power module substrate of the invention is a method of manufacturing a power module substrate in which a plurality of ceramic substrates and metal plates are alternately laminated, and bonded, and the metal plates on both sides of the ceramic substrates are in a connected state through penetration holes formed in the ceramic substrate, in which, when the ceramic substrates and the metal plates are laminated, columnar metallic members that are longer than the penetration holes are inserted into the penetration holes in the ceramic substrates, and, when the ceramic substrates and the metal plates are bonded, the metallic members are pressurized and plastically deformed so that the metal plates on both sides of the ceramic substrates are bonded through the metallic members.
  • the metal plates are desirably bonded in a state in which an interspace is formed between the metallic member and the inner circumferential surface of the penetration hole. Since an interspace is formed between the metallic member and the inner circumferential surface of the penetration hole, and the penetration hole is not filled with metal, it is possible to absorb the difference in the coefficient of thermal expansion between the metallic member and the ceramic substrate using the interspace even when the metallic member is thermally expanded and shrunk repeatedly due to a temperature cycle.
  • the metallic member may be integrally provided in advance on the surface of one of both metal plates that are disposed on both sides of the ceramic substrate. In this case, the metallic member is bonded to the other metal plate.
  • the metallic member may be integrally provided in advance on the respective surfaces of both metal plates that are disposed on both sides of the ceramic substrate.
  • the metallic member is composed of two members, the members are provided at both metal plates respectively, and bonded at a middle location of the length of the penetration hole.
  • the metallic member may have end surfaces at both ends in the longitudinal direction, and the end surfaces may be bonded to both metal plates disposed on both sides of the ceramic substrate respectively.
  • the power module substrate of the invention is a power module substrate in which a plurality of ceramic substrates and metal plates are alternately laminated, and bonded, and the metal plates on both sides of the ceramic substrates are in a connected state through the insides of penetration holes formed in the ceramic substrate, in which the metal plates on both sides of the ceramic substrates are bonded in a state in which metallic members inserted in the penetration holes are plastically deformed.
  • the power module substrate of the invention desirably may have interspaces formed between the metallic members and an inner circumferential surfaces of the penetration holes.
  • the invention it is possible to adjust dimensional variation of the thickness of the ceramic substrate in accordance with the plastic deformation amount of the metallic member, and to stably bond the metal plates to the ceramic substrates.
  • occurrence of thermal stress caused by the difference in the coefficient of thermal expansion between the metallic member and the ceramic substrate is reduced, and occurrence of separation, cracking, and the like is prevented even when the metallic members are thermally expanded and shrunk repeatedly due to a temperature cycle.
  • FIG. 1 is a vertical cross-sectional view showing a first embodiment of a power module substrate of the invention, which is equivalent to a sectional view taken along line A-A in FIG. 4 .
  • FIG. 2 is an enlarged cross-sectional view showing the vicinity of a bonding portion in FIG. 1 .
  • FIG. 3 is the same enlarged cross-sectional view as FIG. 2 showing a dimensional relationship between a penetration hole in a ceramic substrate and a protrusion portion in a metal plate before bonding.
  • FIG. 4 is a plane view of the power module substrate of FIG. 1 .
  • FIG. 5 is an arrow view taken along the line B-B in FIG. 1 .
  • FIG. 6 is a front view showing an example of a pressurizing apparatus that is used in a manufacturing method of the invention.
  • FIG. 7 is a diagrammatic view of the actual stress and actual strain of the metal plate.
  • FIG. 8 is a vertical cross-sectional view showing a second embodiment of the power module substrate of the invention, which is equivalent to a sectional view taken along line C-C in FIG. 10 .
  • FIG. 9 is a plane view of the power module substrate of FIG. 8 .
  • FIG. 10 is a sectional view taken along line D-D in FIG. 8 .
  • FIG. 11 is the same vertical cross-sectional view as FIG. 1 showing a third embodiment of the power module substrate of the invention.
  • FIG. 12 is a plan view of the power module substrate of FIG. 11 .
  • FIG. 13 is a vertical cross-sectional view showing a state of a fourth embodiment of the power module substrate of the invention pending assembly.
  • FIG. 14 is a vertical cross-sectional view showing a state of a fifth embodiment of the power module substrate of the invention before assembly.
  • FIG. 15 is a vertical cross-sectional view showing a state of a sixth embodiment of the power module substrate of the invention pending assembly.
  • FIG. 16 is a vertical cross-sectional view showing a state of the third embodiment of the power module substrate of the invention pending assembly.
  • FIG. 17 is the same enlarged cross-sectional view as FIG. 2 showing the other example of the vicinity of a bonding portion.
  • FIG. 18 is the same enlarged cross-sectional view as FIG. 2 showing another example of the vicinity of the bonding portion.
  • FIGS. 1 to 5 show a power module substrate of a first embodiment.
  • a plurality of ceramic substrates 2 and 3 , and metal plates 4 A to 4 E, 5 A, 5 B, and 6 are alternately laminated, and bonded to each other through brazing, an electronic part 7 is mounted on a part of the metal plates 4 A to 4 E ( 4 D and 4 E in the shown example) disposed at the top step, and a heat sink 8 is bonded to the metal plate 6 disposed at the bottom step.
  • the metal plates 4 A to 4 E, 5 A, 5 B, and 6 are disposed so as to form three layers.
  • the number of the metal plates 4 A to 4 E, 5 A, 5 B, and 6 is five sheets at the top step, two sheets between both ceramic substrates, and one sheet at the bottom step respectively.
  • one plate ( 4 C) is disposed at the middle location, and two plates ( 4 A and 4 B, and 4 D and 4 E) are disposed at each of both sides.
  • the metal plates ( 5 A and 5 B) between both ceramic substrates 2 and 3 (hereinafter referred to as the middle metal plate) are formed into a thin and long band shape that is long enough to couple the metal plates 4 A and 4 D and the metal plates 4 B and 4 E respectively, which are disposed at both side locations of the top step, as shown in FIGS. 4 and 5 , and the two plates are disposed in parallel.
  • a set of the metal plates 4 A and 4 D and a set of the metal plates 4 B and 4 E, which are disposed at both sides on the top step are in an electrically connected state through the metal plates 5 A and 5 B on the middle step so as to be coupled below the metal plate 4 C at the middle location.
  • a protrusion portion 12 (equivalent to the metallic member of the invention) is integrally formed into a cylindrical shape on one surface of each of four metal plates 4 A, 4 B, 4 D, and 4 E, excluding the metal plate 4 C at the middle location, of the five metal plates 4 A to 4 E on the top step, the protrusion portions 12 are inserted into the respective penetration holes 11 , and bonded to the metal plates 5 A and 5 B on the middle step between both ceramic substrates 2 and 3 .
  • the protrusion portion 12 are bonded to the metal plates 5 A and 5 B on the middle step, and the intermediate vicinities between the bonding portions P of the metal plates 5 A and 5 B on the middle step and the bottom surfaces of the metal plates 4 A, 4 B, 4 D, and 4 E plastically deform so as to develop a state in which the diameters are slightly expanded as described below, but interspaces G are formed between the inner circumferential surfaces of the penetration holes 11 and the protrusion holes.
  • the ceramic substrates 2 and 3 are formed of AlN, Al 2 O 3 , SiC, or the like into a thickness of, for example, 0.32 mm to 1.0 mm
  • the metal plates 4 A to 4 E, 5 A, 5 B, and 6 are formed of pure aluminum or an aluminum alloy into a thickness of, for example, 0.25 mm to 2.5 mm
  • an Al—Si-based or Al—Ge-based brazing material is used as the brazing material that can bond the ceramic substrates and the metal plates.
  • the ceramic substrate 2 having the penetration holes 11 can be produced by forming the penetration holes in an unfired green sheet of a ceramic through a pressing process, and then firing the green sheet. The outer shape is processed after firing. The outer shape of the ceramic substrate 3 having no penetration hole is processed after a green sheet is fired.
  • the metal plates 4 C, 5 A, 5 B, and 6 are produced as metal plates having a brazing foil attached thereto by temporarily fixing a brazing foil 13 (refer to FIG. 3 ) to the surface using a volatile organic medium, such as octanediol, or the like, and integrally punching out the brazing foil through a pressing process.
  • the brazing foil is attached to the metal plate 4 C on the top step and the metal plate 6 on the bottom step, and the brazing foils are attached to both surfaces of the metal plates 5 A and 5 B on the middle step.
  • the metal plates 4 A to 4 E on the top step are formed by forming the protrusion portions 12 on a surface in advance through a pressing process, and attaching a brazing foil in which an opening is made so as to remove the corresponding portion of the protrusion portion 12 to the plane in the vicinity of the protrusion portion 12 .
  • the protrusion portion 12 as formed in the above manner is larger than the thickness of the ceramic substrate 2 having the penetration holes 11 , and is set to have a length that slightly protrudes from the ceramic substrate 2 when inserted into the penetration hole 11 as shown in FIG. 3 .
  • the length is set to 0.02 mm to 0.2 mm larger than the maximum value of the tolerance, for example, 0.05 mm.
  • the outer diameter D 1 of the protrusion portion 12 and the inner diameter D 2 of the penetration hole 11 in the ceramic substrate 2 since the diameter of the protrusion portion 12 is expanded during pressurization as described below, the outer diameter D 1 of the protrusion portion 12 is formed to be 1.0 mm to 20 mm, and the inner diameter D 2 of the penetration hole 11 in the ceramic substrate 2 is formed to be 1.1 mm to 28 mm so that the interspace G is formed even in a state in which the diameter is expanded.
  • the outer diameter D 1 of the protrusion portion 12 is made to be 10 mm
  • the inner diameter D 2 of the penetration hole 11 is made to be 13 mm.
  • the ceramic substrates 2 and 3 as formed in the above manner and the metal plates 4 A to 4 E, 5 A, 5 B, and 6 are alternately overlapped, the protrusion portions 12 on the metal plates 4 A, 4 B, 4 D, and 4 E are inserted into the corresponding penetration holes 11 in the ceramic substrate 2 , and the laminate S is installed in a pressurizing apparatus as shown in FIG. 6 .
  • the pressurizing apparatus 110 has a base plate 111 , guide posts 112 that are vertically mounted to the top surface of the base plate 111 at four corners, a fixing plate 113 fixed to the top end portions of the guide posts 112 , a pressing plate 114 that can move upward and downward between the base plate 111 and the fixing plate 113 , and is supported by the guide posts 112 , and a biasing unit 115 that is provided between the fixing plate 113 and the pressing plate 114 and biases the pressing plate 114 downward, such as a spring.
  • the fixing plate 113 and the pressing plate 114 are disposed in parallel with the base plate 111 , and the laminate S is disposed between the base plate 111 and the pressing plate 114 .
  • Carbon sheets 116 are provided on both surfaces of the laminate S in order to equalize pressurizing.
  • the pressurizing apparatus 110 In a state in which the laminate is pressurized using the pressurizing apparatus 110 , the pressurizing apparatus 110 is installed in a heating furnace, not shown, and heated to a brazing temperature of, for example, 630° C. so as to braze the laminate.
  • the biasing force of the biasing unit 115 is set in advance so that a load of the yield point or more is exerted on the protrusion portions 12 on the metal plates 4 A, 4 B, 4 D, and 4 E during the brazing.
  • FIG. 7 is a diagrammatic view of the actual stress and actual strain of aluminum having a purity of 99.99% by mass in the vicinity of 630° C., in which the aluminum yields at approximately 3.5 MPa. Therefore, for example, when the outer diameter D 1 of the protrusion portion 12 is set to 10 mm, the biasing force of the biasing unit 115 at room temperature is set so that a load of 270 N or more is exerted on the protrusion portion 12 at a high temperature of 630° C.
  • the protrusion portions 12 plastically deform so as to be pressed during the brazing, and are bonded to the metal plates 5 A and 5 B on the middle step, and the planes of the metal plates 4 A to 4 E around the protrusion portions 12 come into close contact with the surface of the ceramic substrate 2 , whereby a uniform bonding state in the surface direction can be achieved.
  • the diameters of the protrusion portions 12 partially expand, but the interspaces G are formed between the protrusion portions 12 and the inner circumferential surfaces of the penetration holes 11 in a state in which the diameters are expanded as described above, and therefore there is no case in which the protrusion portions 12 press the inner circumferential surfaces of the penetration holes 11 .
  • the power module substrate 1 as manufactured in the above manner is provided for use in a state in which an electronic part 7 is mounted on a part of the metal plates 4 A to 4 E on the top step, and the heat sink 8 is mounted on the metal plate 6 on the bottom step. Since the interspaces G are formed between the protrusion portions 12 and the inner circumferential surfaces of the penetration holes 11 , thermal stresses are reduced at the portions of the penetration holes 11 even when the protrusion portions are thermally expanded and shrunk repeatedly due to a temperature cycle during use, and separation of the bonding portions, cracking in the ceramic substrates 2 and 3 , and the like are prevented, whereby the power module substrate can maintain high reliability.
  • heat generated from the electronic part 7 that is mounted on the metal plates 4 D and 4 E on the top step is transmitted to the metal plates 5 A and 5 B on the middle step through the protrusion portions 12 from the metal plates 4 D and 4 E; however, in a case in which the protrusion portions 12 are disposed immediately below the electronic part 7 , the heat is linearly transmitted from the metal plates 4 D and 4 E to the metal plates 5 A and 5 B on the middle step through the protrusion portions 12 so that the heat can be rapidly dissipated.
  • a large outer diameter D 1 of the protrusion portion 12 is preferred in order to enhance the heat-releasing properties, and, for example, if the transverse area is larger than the projected area of the electronic part 7 , excellent heat-releasing properties are exhibited when the electronic part 7 is mounted on the extended imaginary area of the protrusion portions 12 .
  • the protrusion portion 12 having a large cross-sectional area is preferred since the electric current density is decreased.
  • FIGS. 8 to 10 show a power module substrate of a second embodiment of the invention.
  • metal plates 22 A and 22 B on the middle step which are disposed between both ceramic substrates 2 and 3 , are flexurally molded into an L shape when viewed on a plane, and the flexural portions are arranged so as to face each other.
  • connection structure is the same as in the first embodiment, which will not be described.
  • the power module substrate 21 of the second embodiment since the metal plate 22 A and 22 B on the middle step, which are disposed between both ceramic substrates 2 and 3 , are arranged with the flexural portions facing each other, a hollow portion 24 formed by the ceramic substrates 2 and 3 and the metal plates 22 A and 22 B is flexurally formed into a crank shape. Therefore, the power module substrate cannot be manufactured by the method described in Patent Document 2 in which molten metal is fed. According to the method of the invention, since the number and shape of the metal plates 22 A and 22 B that are disposed between the ceramic substrates 2 and 3 can be arbitrarily set, the method has a high degree of freedom in designing, and is advantageous for an increase in integration.
  • FIGS. 11 to 13 show a power module substrate of a third embodiment of the invention.
  • the two ceramic substrates 2 and 3 and three layers of the metal plates 4 A to 4 E, 5 A, 5 B, and 6 form a laminate structure, and a pin fin-heat sink 32 is bonded to the metal plate 6 on the bottom step.
  • the two ceramic substrates 2 and 3 are formed of AlN, Al 2 O 3 , SiC, or the like into a thickness of, for example, 0.635 mm, and three layers of the metal plates 4 A to 4 E, 5 A, 5 B, and 6 are formed of pure aluminum having a purity of 99.99% by mass (4N) into a thickness of, for example, 0.5 mm for the metal plates 4 A to 4 E that compose a circuit layer on the top step, 0.5 mm for the metal plates 5 A and 5 B on the middle layer, and 2 mm for the metal plate 6 on the bottom layer.
  • the protrusion portions 12 are integrally formed on the top surface of the metal plates 5 A and 5 B in the middle layer, the protrusion portions 12 are inserted into the penetration holes 11 formed in the ceramic substrate 2 , and bonded to the metal plates 4 A to 4 E on the top step.
  • a number of pin-shaped fins 34 are integrally formed on a single surface of a plate-shaped portion 33 through hot forging of, for example, an A6063 aluminum alloy.
  • the plate-shaped portion 33 is formed into a 50 mm ⁇ 50 mm ⁇ 5 mm square plate
  • the respective fins 34 are formed into a diameter of 3 mm and a height of 15 mm, and arrayed in a zigzag shape having a pitch of 6 mm.
  • the ceramic substrates 2 and 3 are manufactured by firing a green sheet by the same method as in the first embodiment, and the respective metal plates 4 A to 4 E, 5 A, 5 B, and 6 are punched out through a pressing process.
  • the heat sink 32 having the plate-shaped portion 33 and the fins 34 integrally molded therein is manufactured by hot forging.
  • a brazing foil is attached to the rear surfaces of the metal plates 4 A to 4 E on the top step and both surfaces of the metal plates 5 A and 5 B in the middle layer.
  • two ceramic substrates 2 and 3 , and three layers of the metal plates 4 A to 4 E, 5 A, 5 B, and 6 are first bonded (primary bonding), and then the heat sink 32 is bonded (secondary bonding).
  • the laminate is installed in the pressurizing apparatus 11 as shown in FIG. 6 and pressurized.
  • the brazing foil that is attached to the metal plates 4 A to 4 E, 5 A, 5 B, and 6 for example, a 15 ⁇ m-thick brazing foil composed of Al—7.5% by mass Si is used.
  • the laminate in a pressurized state is heated under vacuum so as to be brazed.
  • the heating temperature is, for example, 630° C.
  • the pressuring force is, for example, 0.5 MPa (5 kg/cm 2 ), and a load of 3.5 MPa or more is exerted on the protrusion portions 12 at a high temperature of 630° C.
  • the protrusion portions 12 formed on the metal plates 5 A and 5 B in the middle layer are plastically deformed and bonded to the metal plates 4 A to 4 E on the top step, and the metal plates 4 A to 4 E, 5 A, and 5 B on both layers are in a connected state through the penetration holes 11 in the ceramic substrate 2 . Even in this case, an interspace is formed between the outer circumferential surface of the protrusion portion 12 , the diameter of which is expanded due to the plastic deformation, and the inner circumferential surface of the penetration hole 11 in the ceramic substrate 2 .
  • the brazing foil 35 is interposed between the metal plate 6 on the bottom step in a first bonding resultant 31 X and the plate-shaped portion 33 in the heat sink 32 , and the assembly in a pressurized state is heated under vacuum so as to be brazed.
  • the brazing foil 35 a 50 ⁇ m-thick brazing foil composed of Al—10.5% by mass Si is used.
  • the pressuring force is, for example, 0.7 MPa (7 kg/cm 2 ), and the heating temperature is, for example, 610° C. Even in this case, the same pressurizing apparatus as in FIG.
  • the power module substrate 31 which has the metal plates 4 A to 4 E on the top step and the metal plates 5 A and 5 B on the middle layer in a connected state through the ceramic substrates 2 and 3 so as to have the same electrical characteristics as in the first embodiment, and is integrated with the heat sink 32 .
  • the two ceramic substrates 2 and 3 and three layers of the metal plates 4 A to 4 E, 5 A, 5 B, and 6 are first bonded, and then the heat sink 32 is bonded; however, in a fourth embodiment, a heat sink-attached power module substrate 41 in which the ceramic substrates, the metal plates, and the heat sink are bonded at the same time is provided.
  • the respective elements will have the same reference numbers as in the third embodiment for description.
  • the ceramic substrates 2 and 3 are manufactured by firing a green sheet by the same method as in the first embodiment, and the respective metal plates 4 A to 4 E, 5 A, 5 B, and 6 are punched out through a pressing process.
  • the heat sink 32 integrated with the plate-shaped portion 33 and the fins 34 is manufactured through hot forging.
  • the metal plates 4 A to 4 E, 5 A, 5 B, and 6 as shown in FIG.
  • approximately 0.4 ⁇ m-thick copper layers 42 are formed through deposition or the like respectively on the bonding surface of the ceramic substrates 2 and 3 , and the bonding surface of the heat sink 32 , that is, the rear surfaces of the metal plates 4 A to 4 E on the top step, the plane portions on both surfaces of the metal plates 5 A and 5 B in the middle layer, excluding the protrusion portions 12 , and both surfaces of the metal plate 6 on the bottom step.
  • the respective metal plates 4 A to 4 E, 5 A, 5 B, and 6 and the ceramic substrates 2 and 3 are alternately laminated on the top surface of the plate-shaped portion 33 in the heat sink 32 , the assembly is in a state in which the protrusion portions 12 on the metal plates 5 A and 5 B are inserted into the penetration holes 11 in the ceramic substrate 2 , installed in the same pressurizing apparatus 110 as in FIG. 6 , and pressurized.
  • a carbon sheet having openings correspondingly disposed to the fins 34 is used as the carbon sheet that comes into contact with the heat sink 32 , and the plate-shaped portion 33 in the heat sink 32 is pressed around the fins 34 .
  • the pressuring force is, for example, 0.6 MPa (6 kg/cm 2 ), and a load at which the protrusion portion 12 yield or more is exerted at a high temperature of 600° C.
  • Three layers of the metal plates 4 A to 4 E, 5 A, 5 B, and 6 , the two ceramic substrates 2 and 3 , and the heat sink 32 are bonded at the same time by heating the assembly at 600° C. for 0.5 hours under vacuum of 10 ⁇ 3 Pa to 10 ⁇ 6 Pa in the pressurized state.
  • the above bonding method is a transient liquid phase bonding method termed transient liquid phase diffusion bonding (TLP bonding method).
  • the copper layers 42 deposited on the surfaces of the metal plates 4 A to 4 E, 5 A, 5 B, and 6 are interposed in the interfaces among the metal plates 4 A to 4 E, 5 A, 5 B, and 6 , the ceramic substrates 2 and 3 , and the heat sink 32 .
  • the copper first diffuses into the aluminum of the metal plates 4 A to 4 E, 5 A, 5 B, and 6 through heating, and the concentration of the copper in the vicinity of the copper layers on the metal plates 4 A to 4 E, 5 A, 5 B, and 6 increases so as to decrease the melting point, whereby a molten metal phase is formed in the bonding interfaces in the eutectic range between aluminum and copper.
  • the molten metal phase comes into contact and reacts with the ceramic substrates 2 and 3 or the heat sink 32 at a certain temperature for a certain time, as the copper further diffuses into the aluminum, the concentration of copper in the molten metal phase gradually decreases so as to increase the melting point, and the molten metal phase is solidified in a state in which the temperature is held constant.
  • the metal plates 4 A to 4 E, 5 A, 5 B, and 6 , the ceramic substrates 2 and 3 , and the heat sink 32 are strongly bonded, and cooled to room temperature after the molten metal phase is fully solidified.
  • the protrusion portions 12 formed on the metal plates 5 A and 5 B in the middle layer also plastically deform, and are bonded to the metal plates 4 A to 4 E on the top step so that both metal plates 4 A to 4 E, 5 A, and 5 B are in a connected state through the penetration holes 11 in the ceramic substrate 2 .
  • an interspace is formed between the outer circumferential surface of the protrusion portion 12 , the diameter of which is expanded due to the plastic deformation, and the inner circumferential surface of the penetration hole 11 in the ceramic substrate 2 .
  • the metal plates 4 A to 4 E on the top step and the metal plates 5 A and 5 B in the middle step are in a connected state through the ceramic substrate 2 , and, similarly to the third embodiment, the power module substrate 41 integrated with the heat sink 32 can be provided.
  • the ceramic substrates 2 and 3 , the respective metal plates 4 A to 4 E, 5 A, 5 B, and 6 , and the heat sink 32 can be bonded at one stroke, and the efficiency of assembling operation is favorable.
  • the respective embodiments as described above show a so-called direct brazed aluminum (DBA) substrate in which aluminum is used for the metal plates on both surfaces of the ceramic substrate as an example of the substrate; however, in a power module substrate 51 of a fifth embodiment as shown in FIG. 15 , copper plates are used for metal plates 52 A to 52 E on the top step and metal plates 53 A and 53 B in the middle layer.
  • a heat sink having straight fins 55 is used as a heat sink 54 .
  • FIG. 15 is, similarly to FIG. 1 , equivalent to a cross-sectional view taken along the line A-A in FIG. 4 , and shows the metal plates 52 A, 52 C, 52 D, and 53 A of the respective metal plates 52 A to 52 E, 53 A, and 53 B.
  • the heat sink 54 is formed, for example, through extrusion molding of an A6063 aluminum alloy. In the example as shown in the drawing, the heat sink is extruded in an orthogonal direction to the paper surface, and band-shaped straight fins 55 are formed in the extrusion direction.
  • a plurality of 4 mm-thick and 15 mm-high straight fins 55 are formed along the extrusion direction on a single surface of a 50 mm ⁇ 50 mm ⁇ 5 mm plate-shaped portion 56 .
  • the ceramic substrates 2 and 3 are manufactured by firing a green sheet by the same method as in the first embodiment as described above, and the respective metal plates 52 A to 52 E, 53 A, 53 B, and 6 are punched out through a pressing process.
  • the heat sink 54 having the plate-shaped portion 56 and the fins 55 integrally formed therein is manufactured through extrusion molding.
  • the metal plates 52 A to 52 E, 53 A, 53 B, and 6 , the ceramic substrates 2 and 3 , and the heat sink 54 are bonded two times at the primary bonding and the secondary bonding.
  • the two ceramic substrates 2 and 3 and the metal plates 52 A to 52 E, 53 A, and 53 B on the top stair and in the middle layer are laminated through a brazing material.
  • the brazing material for example, an Ag—27.4% by mass Cu—2.0% by mass Ti active metal brazing material is used.
  • the laminate having the brazing material interposed therein is pressurized using a pressurizing apparatus at a high temperature of 850° C. so that a load at which the protrusion portion 12 yields or more is exerted, and heated at 850° C. under vacuum for approximately 10 minutes.
  • Ti which is an active metal in the brazing material, first diffuses into the surfaces of the ceramic substrates 2 and 3 so as to form TiN, and the metal plates 52 A to 52 E, 53 A, and 53 B are bonded through an Ag—Cu alloy.
  • the protrusion portions 12 on the metal plates 53 A and 53 B in the middle layer are bonded to the metal plates 52 A to 52 E on the top step through the penetration holes 11 in the ceramic substrate 2 during the primary bonding.
  • the assembly is bonded through the transient liquid phase bonding method (transient liquid phase diffusion bonding).
  • the assembly is heated at 600° C. for 0.5 hours under vacuum of 10 ⁇ 3 Pa to 10 ⁇ 6 Pa with a pressurizing force of 98 kPa (1 kg/cm 2 ) to 3.4 MPa (3.5 kg/cm 2 ).
  • the metal plates 52 A to 52 E, 53 A, 53 B, and 62 are all formed of copper (for example, tough pitch copper), a heat sink 63 is also formed of copper, and the heat sink 63 and the metal plate 62 on the bottom step are bonded through soldering.
  • AlN is used for the ceramic substrates 2 and 3 .
  • the plate-shaped heat sink 63 is used.
  • two ceramic substrates 2 and 3 , and three layers of the metal plates 52 A to 52 E, 53 A, 53 B, and 62 are first bonded through active metal bonding (primary bonding), and then the heat sink 63 is bonded (secondary bonding).
  • the brazing material for example, an Ag—27.4% by mass Cu—2.0% by mass Ti active metal brazing material is used, a laminate of the metal plates and the ceramic substrates is pressurized at a high temperature of 850° C. so that a load at which the protrusion portion 12 yields or more is exerted, and heated at 850° C. under vacuum for approximately 10 minutes, whereby Ti, which is an active metal, first diffuses into the ceramic substrates 2 and 3 so as to form TiN, and the metal plates 52 A to 52 E, 53 A, 53 B, and 62 are bonded through an Ag—Cu alloy.
  • the brazing material for example, an Ag—27.4% by mass Cu—2.0% by mass Ti active metal brazing material is used, a laminate of the metal plates and the ceramic substrates is pressurized at a high temperature of 850° C. so that a load at which the protrusion portion 12 yields or more is exerted, and heated at 850° C. under vacuum for approximately 10 minutes, whereby Ti, which is an
  • a 200 ⁇ m-thick soldering foil 64 composed of Sn—3.5% by mass Ag—0.5% by mass Cu and the like is interposed between the nickel plates, and heated to 280° C. in a reduction atmosphere using, for example, 3% hydrogen, whereby the soldering foil 64 is reflowed, cooled, and bonded.
  • the metal plates 52 A to 52 E, 53 A, 53 B, and 62 are all formed of copper, the heat-releasing properties are excellent.
  • the metal plate having the protrusion portion integrated formed thereon has been described as the embodiment, but a cylindrical metallic member 71 is formed separately from metal plates 4 and 5 , and the metallic member 71 is disposed in the penetration hole 11 in the ceramic substrate 2 as shown in FIG. 17 , whereby both end surfaces of the metallic member may be bonded to both metal plates 4 and 5 .
  • the bonding portions P are formed on both end surfaces of the metallic members 71 .
  • protrusion portions (metallic members) 12 A and 12 B are respectively formed on both metal plates 4 and 5 , and bonded in the middle location of the length of the penetration hole 11 in the ceramic substrate 2 as shown in FIG. 18 may be employed.
  • the bonding portions P are formed in the middle location in the penetration hole 11 .
  • the metallic member is formed into a polygonal cylindrical shape on a horizontal cross section instead of the cylindrical shape, and the penetration hole is also made to have the same polygonal shape, it is possible to prevent the metallic member from rotating in the penetration hole, and to ease alignment of the metal plates when a multilayer structure is employed.
  • the structure is not limited thereto, and the metal plates may be laminated between three or more ceramic substrates.
  • fins-attached types such as pin fins and straight fins
  • plate-shaped types termed a heat dissipation plate are all defined as the heat sink.
US13/447,483 2011-04-20 2012-04-16 Method of manufacturing power module substrate and power module substrate Active 2032-12-01 US9018534B2 (en)

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JP2011175282A JP5821389B2 (ja) 2011-04-20 2011-08-10 パワーモジュール用基板の製造方法及びパワーモジュール用基板

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