US8643008B2 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- US8643008B2 US8643008B2 US13/547,119 US201213547119A US8643008B2 US 8643008 B2 US8643008 B2 US 8643008B2 US 201213547119 A US201213547119 A US 201213547119A US 8643008 B2 US8643008 B2 US 8643008B2
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- US
- United States
- Prior art keywords
- oxide semiconductor
- pair
- insulating film
- regions
- film
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 504
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 237
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 224
- 239000001301 oxygen Substances 0.000 claims abstract description 224
- 239000002019 doping agent Substances 0.000 claims description 115
- 239000011701 zinc Substances 0.000 claims description 57
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 12
- 239000001307 helium Substances 0.000 claims description 9
- 229910052734 helium Inorganic materials 0.000 claims description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052743 krypton Inorganic materials 0.000 claims description 7
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052754 neon Inorganic materials 0.000 claims description 7
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 7
- 229910052724 xenon Inorganic materials 0.000 claims description 7
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 230000005669 field effect Effects 0.000 abstract description 60
- 239000010408 film Substances 0.000 description 771
- 239000000758 substrate Substances 0.000 description 101
- 238000000034 method Methods 0.000 description 74
- 238000010438 heat treatment Methods 0.000 description 54
- 230000007547 defect Effects 0.000 description 50
- 239000007789 gas Substances 0.000 description 49
- 238000004544 sputter deposition Methods 0.000 description 39
- 238000004519 manufacturing process Methods 0.000 description 38
- 125000004429 atom Chemical group 0.000 description 37
- 239000001257 hydrogen Substances 0.000 description 36
- 229910052739 hydrogen Inorganic materials 0.000 description 36
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 33
- 238000005530 etching Methods 0.000 description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 18
- 229910052719 titanium Inorganic materials 0.000 description 18
- 239000010936 titanium Substances 0.000 description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 18
- 229910052721 tungsten Inorganic materials 0.000 description 18
- 239000010937 tungsten Substances 0.000 description 18
- 239000002184 metal Substances 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- 239000010410 layer Substances 0.000 description 16
- 239000012298 atmosphere Substances 0.000 description 14
- 125000004430 oxygen atom Chemical group O* 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 238000006356 dehydrogenation reaction Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 11
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 239000000969 carrier Substances 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 9
- 229910052801 chlorine Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 7
- 229910020994 Sn-Zn Inorganic materials 0.000 description 7
- 229910009069 Sn—Zn Inorganic materials 0.000 description 7
- 229910007541 Zn O Inorganic materials 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 229910018137 Al-Zn Inorganic materials 0.000 description 6
- 229910018573 Al—Zn Inorganic materials 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 239000002156 adsorbate Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 239000003381 stabilizer Substances 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000003795 desorption Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- -1 lanthanum (La) Chemical class 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 4
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 4
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229960001730 nitrous oxide Drugs 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910020944 Sn-Mg Inorganic materials 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910009369 Zn Mg Inorganic materials 0.000 description 2
- 229910007573 Zn-Mg Inorganic materials 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
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- 229920001721 polyimide Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
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- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Definitions
- the present invention relates to a semiconductor device which includes a circuit including a semiconductor element such as a transistor, and a method for manufacturing the semiconductor device.
- the present invention relates to a power device which is mounted on a power supply circuit; a semiconductor integrated circuit including a memory, a thyristor, a converter, an image sensor, or the like; an electro-optical device typified by a liquid crystal display panel; a light-emitting display device including a light-emitting element; and an electronic device including any of the above as a component.
- a semiconductor device means all types of devices which can function by utilizing semiconductor characteristics
- an electro-optical device, a light-emitting display device, a semiconductor circuit, and an electronic device are all semiconductor devices.
- Transistors formed over a glass substrate or the like are typically manufactured using amorphous silicon, polycrystalline silicon, or the like, as typically seen in liquid crystal display devices. Although transistors including amorphous silicon have low field effect mobility, they can be formed over a larger glass substrate. On the other hand, although transistors including polycrystalline silicon have high field effect mobility, they are not suitable for being formed over a larger glass substrate.
- Patent Document 1 and Patent Document 2 disclose a technique by which a transistor is manufactured using an oxide semiconductor such as zinc oxide or an In—Ga—Zn—O-based oxide as an oxide semiconductor and is used as a switching element of a pixel or the like of a display device.
- a semiconductor device including a transistor having high field-effect mobility and large on-state current consumes a large amount of power due to the current of the transistor at negative gate voltage.
- an object of an embodiment of the present invention is to provide a semiconductor device which can operate at high speed and consumes a smaller amount of power.
- a transistor having small current at negative gate voltage and a transistor having high field-effect mobility and large on-state current are separately formed.
- the semiconductor device includes a circuit including the transistor having small current at negative gate voltage and a circuit including the transistor having high field-effect mobility and large on-state current.
- the transistor having high field-effect mobility and large on-state current and the transistor having small current at negative gate voltage each include an oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, and a gate insulating film between the oxide semiconductor film and the gate electrode.
- the oxide semiconductor film includes a first region overlapping with the gate electrode.
- the oxygen concentration of the first region of the oxide semiconductor film of the transistor having small current at negative gate voltage is different from that of the first region of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current.
- the oxygen concentration of the first region of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current is preferably lower than that of the first region of the oxide semiconductor film of the transistor having small current at negative gate voltage.
- oxygen is added to the oxide semiconductor film of the transistor having small current at negative gate voltage.
- concentration of oxygen added to the oxide semiconductor film is higher than or equal to 5 ⁇ 10 19 /cm 3 and lower than or equal to 5 ⁇ 10 21 /cm 3 .
- the oxide semiconductor films of the transistor having high field-effect mobility and large on-state current and the transistor having small current at negative gate voltage each include the first region overlapping with the gate electrode and a pair of second regions between which the first region is sandwiched.
- the oxide semiconductor films of the transistor having high field-effect mobility and large on-state current and the transistor having small current at negative gate voltage each include the first region overlapping with the gate electrode, a pair of second regions between which the first region is sandwiched, and a pair of third regions between which the pair of second regions is sandwiched.
- the pair of second regions and the pair of third regions contain dopant.
- the dopant concentration of the pair of second regions and the dopant concentration of the pair of third regions are each higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than or equal to 1 ⁇ 10 22 atoms/cm 3 , preferably higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than 5 ⁇ 10 19 atoms/cm 3 .
- the transistor having high field-effect mobility and large on-state current and the transistor having small current at negative gate voltage may each have a single gate structure.
- the transistor having small current at negative gate voltage may have a single gate structure and the transistor having high field-effect mobility and large on-state current may have a dual gate structure.
- the threshold voltage of a transistor having a dual gate structure can be controlled by application of different voltages to two electrodes.
- the transistor having high field-effect mobility and large on-state current and the transistor having small current at negative gate voltage each include a pair of electrodes in contact with the oxide semiconductor film. Further, the transistor having high field-effect mobility and large on-state current and the transistor having small current at negative gate voltage may each be a staggered transistor or a coplanar transistor.
- the oxide semiconductor films each contain one or more of elements selected from In, Ga, Sn, and Zn.
- the transistors including oxide semiconductor films having different oxygen concentrations of the first regions overlapping with respective gate electrodes are manufactured.
- the transistor having higher oxygen concentration of the first region i.e., the transistor including an oxide semiconductor film containing oxygen in a higher proportion than a proportion of oxygen in the stoichiometric ratio, includes a smaller number of oxygen defects in the oxide semiconductor film. Therefore, the donor level due to oxygen defects in the energy gap is low or does not substantially exist. As a result, leakage current is not easily generated in an off state, achieving a reduction in current at negative gate voltage of the transistor.
- the transistor having lower oxygen concentration of the first region i.e., the transistor including an oxide semiconductor film containing oxygen in a lower proportion than a proportion of oxygen in the stoichiometric ratio, includes oxygen defects, carriers are easily generated in an on state, resulting in an increase in field-effect mobility and on-state current of the transistor. Therefore, a semiconductor device which can operate at high speed and consume a smaller amount of power can be manufactured by formation of transistors in accordance with characteristics of circuits included in the semiconductor device. Specifically, a transistor having high field-effect mobility and large on-state current is used in a circuit which needs to operate at high speed and a transistor having small current at negative gate voltage is used in a circuit with small leakage current.
- a transistor including a large number of oxygen defects in an oxide semiconductor film and a transistor including a small number of oxygen defects in an oxide semiconductor film can be manufactured.
- a transistor having high field-effect mobility and large on-state current and a transistor having small current at negative gate voltage can be manufactured.
- these transistors are separately formed in circuits in accordance with functions thereof, whereby a semiconductor device can operate at high speed and consume a smaller amount of power.
- FIG. 1 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention
- FIGS. 2A to 2D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention
- FIGS. 3A to 3C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention
- FIG. 4 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention.
- FIGS. 5A to 5C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- FIG. 6 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention.
- FIGS. 7A to 7C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- FIGS. 8A to 8C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- FIG. 9 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention.
- FIGS. 10A to 10C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- FIG. 11 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention.
- FIGS. 12A and 12B are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- FIG. 13 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention.
- FIGS. 14A to 14D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- FIG. 15 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention.
- FIGS. 16A to 16D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- FIGS. 17A to 17C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- FIGS. 18A and 18B are each a graph showing electric characteristics of a transistor according to an embodiment of the present invention.
- FIG. 19 is a block diagram illustrating a structure of a memory device according to an embodiment of the present invention.
- FIG. 20 is a circuit diagram illustrating a memory device according to an embodiment of the present invention.
- FIG. 21 is a circuit diagram illustrating a memory device according to an embodiment of the present invention.
- FIG. 22 illustrates an active matrix display device according to an embodiment of the present invention.
- FIG. 23 is an external view of an electronic device according to an embodiment of the present invention.
- a structure of a semiconductor device including a transistor having small current at negative gate voltage and a transistor having high field-effect mobility and large on-state current, and a method for manufacturing the semiconductor device will be described with reference to FIG. 1 , FIGS. 2A to 2D , and FIGS. 3A to 3C .
- the transistors of this embodiment are each a coplanar transistor having a top gate structure and are each characterized in that a pair of electrodes covers side surfaces and part of a top surface of an oxide semiconductor film.
- FIG. 1 is a cross-sectional view of the semiconductor device described in this embodiment.
- the semiconductor device illustrated in FIG. 1 includes a transistor 120 a having small current at negative gate voltage and a transistor 120 c having high field-effect mobility and large on-state current.
- the transistor 120 a having small current at negative gate voltage includes an insulating film 103 over a substrate 101 , an oxide semiconductor film 122 a over the insulating film 103 , a pair of electrodes 115 a and 115 b which is in contact with the oxide semiconductor film 122 a and serves as a source electrode and a drain electrode, a gate insulating film 117 covering the oxide semiconductor film 122 a , and a gate electrode 119 a which is provided over the gate insulating film 117 and overlaps with the oxide semiconductor film 122 a .
- the oxide semiconductor film 122 a includes a first region 123 a overlapping with the gate electrode 119 a and a pair of second regions 125 a and 125 b between which the first region 123 a is sandwiched and which contains dopant.
- the first region 123 a serves as a channel region
- regions of the pair of second regions 125 a and 125 b containing dopant, which are in contact with the pair of electrodes 115 a and 115 b serve as a source region and a drain region.
- the transistor 120 c having high field-effect mobility and large on-state current includes the insulating film 103 over the substrate 101 , an oxide semiconductor film 122 c over the insulating film 103 , a pair of electrodes 115 c and 115 d which is in contact with the oxide semiconductor film 122 c and serves as a source electrode and a drain electrode, the gate insulating film 117 covering the oxide semiconductor film 122 c , and a gate electrode 119 c which is provided over the gate insulating film 117 and overlaps with the oxide semiconductor film 122 c .
- the oxide semiconductor film 122 c includes a first region 123 c overlapping with the gate electrode 119 c and a pair of second regions 125 c and 125 d between which the first region 123 c is sandwiched and which contains dopant.
- the first region 123 c serves as a channel region
- regions of the pair of second regions 125 c and 125 d containing dopant, which are in contact with the pair of electrodes 115 c and 115 d serve as a source region and a drain region.
- an insulating film 127 covering the transistors 120 a and 120 c be formed.
- the oxide semiconductor film 122 a included in the transistor 120 a contains oxygen in excess of the stoichiometric ratio. In this case, excess oxygen exists between lattices of the oxide semiconductor in some cases.
- the concentration of oxygen added to the oxide semiconductor film 122 a is higher than or equal to 5 ⁇ 10 19 /cm 3 and lower than or equal to 5 ⁇ 10 21 /cm 3 .
- the oxide semiconductor film 122 a includes a smaller number of oxygen defects than the oxide semiconductor film 122 c . Therefore, the donor level due to the oxygen defects in the energy gap is low or does not substantially exist. As a result, current at negative gate voltage of the transistor 120 a is small.
- the oxide semiconductor film 122 c includes oxygen defects. Therefore, carriers are easily generated in the transistor 120 c in an on state. Thus, the transistor 120 c has high field-effect mobility and large on-state current.
- the substrate 101 There is no particular limitation on a material and the like of the substrate 101 as long as the material has heat resistance enough to withstand at least heat treatment to be performed later.
- a glass substrate, a ceramic substrate, a quartz substrate, or a sapphire substrate may be used as the substrate 101 .
- a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon, silicon carbide, or the like, a compound semiconductor substrate made of silicon germanium or the like, an SOI substrate, or the like can be used as the substrate 101 .
- any of these substrates further provided with a semiconductor element may be used as the substrate 101 .
- a flexible substrate may also be used as the substrate 101 .
- a separation layer may be provided between the substrate 101 and the insulating film 103 .
- the separation layer can be used when part or the whole of a semiconductor device formed over the separation layer is separated from the substrate 101 and transferred onto another substrate. In such a case, the semiconductor device can be transferred to a substrate having low heat resistance or a flexible substrate as well.
- Silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, silicon oxide, silicon oxynitride, gallium oxide, hafnium oxide, yttrium oxide, or the like can be used for the insulating film 103 as appropriate.
- the insulating film 103 may be formed using an oxide insulating film from which part of oxygen is released by heating.
- the oxide insulating film from which part of oxygen is released by heating is preferably an oxide insulating film which contains oxygen at a proportion exceeding the stoichiometric ratio. Oxygen can be diffused from the oxide insulating film from which part of oxygen is released by heating into the oxide semiconductor film by heating, because oxygen is released from the oxide insulating film by heating.
- Typical examples of the oxide insulating film from which part of oxygen is released by heating include films of silicon oxide, silicon oxynitride, silicon nitride oxide, gallium oxide, hafnium oxide, yttrium oxide, and the like.
- the thickness of the insulating film 103 is greater than or equal to 50 nm, preferably greater than or equal to 200 nm and less than or equal to 500 nm. With the use of the thick insulating film 103 , in the case where an oxide insulating film from which part of oxygen is released by heating is used as the insulating film, the amount of oxygen released from the insulating film 103 can be increased and interface states at the interface between the insulating film 103 and an oxide semiconductor film to be formed later can be reduced.
- to release part of oxygen by heating means that the amount of released oxygen is greater than or equal to 1.0 ⁇ 10 18 atoms/cm 3 , preferably greater than or equal to 3.0 ⁇ 10 20 atoms/cm 3 in thermal desorption spectroscopy (TDS) on an oxygen atom basis.
- TDS thermal desorption spectroscopy
- the amount of released gas in TDS analysis is proportional to the integral value of a spectrum. Therefore, the amount of released gas can be calculated from the ratio of the integral value of a spectrum of the insulating film to the reference value of a standard sample.
- the reference value of a standard sample refers to the ratio of the density of a predetermined atom contained in a sample to the integral value of a spectrum.
- the number of the released oxygen molecules (N O2 ) from an insulating film can be calculated according to Formula 1 using the TDS analysis results of a silicon wafer containing hydrogen at a predetermined density, which is the standard sample, and the TDS analysis results of the insulating film.
- N O2 the number of the released oxygen molecules (N O2 ) from an insulating film.
- all spectra having a mass number of 32 which are obtained by the TDS analysis are assumed to originate from an oxygen molecule.
- CH 3 OH can be given as a compound having a mass number of 32, but is not taken into consideration on the assumption that it is unlikely to be present.
- an oxygen molecule including an oxygen atom having a mass number of 17 or 18, which is an isotope of an oxygen atom is also not taken into consideration because the proportion of such a molecule in the natural world is minimal.
- N O ⁇ ⁇ 2 N H ⁇ ⁇ 2 S H ⁇ ⁇ 2 ⁇ ⁇ S O ⁇ ⁇ 2 ⁇ ⁇ [ Formula ⁇ ⁇ 1 ]
- N H2 is the value obtained by conversion of the number of hydrogen molecules released from the standard sample into density.
- S H2 is an integral value of a spectrum of the standard sample which is analyzed by TDS.
- the reference value of the standard sample is set to N H2 /S H2 .
- S O2 is an integral value of a spectrum when the insulating film is analyzed by TDS.
- ⁇ is a coefficient affecting the intensity of the spectrum in the TDS analysis.
- the amount of released oxygen from the above insulating film is measured with a thermal desorption spectroscopy apparatus produced by ESCO Ltd., EMD-WA1000S/W using a silicon wafer containing hydrogen atoms at 1 ⁇ 10 16 atoms/cm 3 as the standard sample.
- part of oxygen is detected as an oxygen atom.
- the ratio between oxygen molecules and oxygen atoms can be calculated from the ionization rate of oxygen molecules. Note that, since the above a includes the ionization rate of oxygen molecules, the number of the released oxygen atoms can also be estimated through the evaluation of the number of the released oxygen molecules.
- N O2 is the number of released oxygen molecules.
- the amount of released oxygen on an oxygen atom basis is twice the number of the released oxygen molecules.
- the insulating film from which oxygen is released by heating may be oxygen-excess silicon oxide (SiO X (X>2)).
- the number of oxygen atoms per unit volume is more than twice the number of silicon atoms per unit volume.
- the number of silicon atoms and the number of oxygen atoms per unit volume are measured by Rutherford backscattering spectrometry.
- Oxygen is supplied from the insulating film 103 to the oxide semiconductor films 122 a and 122 c , whereby the interface states at the interface between the insulating film 103 and the oxide semiconductor film 122 a and the interface between the insulating film 103 and the oxide semiconductor film 122 c can be reduced. As a result, capture of electric charge or the like which might be generated due to operation of a transistor or the like at the interface between the insulating film 103 and the oxide semiconductor film 122 a and the interface between the insulating film 103 and the oxide semiconductor film 122 c can be suppressed. Thus, a transistor with less electrical characteristic deterioration can be obtained.
- a back channel in this specification refers to the vicinity of the interface with the insulating film 103 of the first regions 123 a and 123 c in the oxide semiconductor films 122 a and 122 c in FIG. 1 .
- Oxygen is sufficiently supplied from the insulating film 103 to the oxide semiconductor films 122 a and 122 c , whereby oxygen defects in the oxide semiconductor films 122 a and 122 c , which cause the shift of the threshold voltage in the negative direction, can be reduced.
- the oxide semiconductor films 122 a and 122 c preferably contains at least indium (In) or zinc (Zn). In particular, In and Zn are preferably contained.
- gallium (Ga) is preferably additionally contained.
- Tin (Sn) is preferably contained as a stabilizer.
- Hafnium (Hf) is preferably contained as a stabilizer.
- Zirconium (Zr) is preferably contained as a stabilizer.
- Aluminum (Al) is preferably contained as a stabilizer.
- lanthanoid such as lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu) may be contained.
- La lanthanum
- Ce cerium
- Pr praseodymium
- Nd neodymium
- Sm samarium
- Eu europium
- Gd gadolinium
- Tb terbium
- Dy dysprosium
- Ho holmium
- Er erbium
- Tm thulium
- Yb ytterbium
- Lu lutetium
- oxide semiconductor for example, indium oxide, tin oxide, zinc oxide, a two-component metal oxide such as an In—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide, a Zn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, or an In—Ga-based oxide, a three-component metal oxide such as an In—Ga—Zn-based oxide (also referred to as IGZO), an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide, a Sn—Ga—Zn-based oxide, an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-based oxide, an In—Zr—Zn-based oxide, an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-based oxide, a
- an In—Ga—Zn-based oxide means an oxide containing In, Ga, and Zn, and there is no limitation on the ratio of In:Ga:Zn.
- the In—Ga—Zn-based oxide may contain a metal element other than In, Ga, and Zn.
- a material represented by InMO 3 (ZnO) m (m>0 is satisfied, and m is not an integer) may be used as the oxide semiconductor.
- M represents one or more metal elements selected from Ga, Fe, Mn, and Co.
- a material represented by In 2 SnO 5 (ZnO) n (n>0, n is an integer) may be used.
- a material with an appropriate composition may be used depending on needed semiconductor characteristics and electrical characteristics (e.g., mobility, threshold voltage, and variation).
- needed semiconductor characteristics e.g., mobility, threshold voltage, and variation.
- the carrier density, the impurity concentration, the defect density, the atomic ratio of a metal element to oxygen, the interatomic distance, the density, and the like be set to appropriate values.
- the energy gap of a metal oxide which can form each of the oxide semiconductor films 122 a and 122 c is 2 eV or more, preferably 2.5 eV or more, further preferably 3 eV or more. In this manner, the current which flows when a transistor is in an off state (off-state current) can be reduced by using an oxide semiconductor having a wide energy gap.
- the oxide semiconductor may be either single crystal or non-single-crystal. In the latter case, the oxide semiconductor may be either amorphous or polycrystal. Further, the oxide semiconductor may have either an amorphous structure including a portion having crystallinity or a non-amorphous structure.
- a planar surface can be obtained with relative ease, so that when a transistor is manufactured with the use of the oxide semiconductor, interface scattering can be reduced, and relatively high mobility can be obtained with relative ease.
- the oxide semiconductor is preferably formed over a flat surface.
- the oxide semiconductor may be formed over a surface with the average surface roughness (Ra) of less than or equal to 1 nm, preferably less than or equal to 0.3 nm, further preferably less than or equal to 0.1 nm.
- Ra is obtained by expanding arithmetic mean surface roughness, which is defined by JIS B0601: 2001 (ISO4287: 1997), into three dimensions so as to be applicable to a curved surface.
- Ra can be expressed as an “average value of the absolute values of deviations from a reference surface to a specific surface” and is defined by the following formula.
- Ra 1 S 0 ⁇ ⁇ y 1 y 2 ⁇ ⁇ x 1 x 2 ⁇ ⁇ f ⁇ ( x , y ) - Z 0 ⁇ ⁇ d x ⁇ d y [ Formula ⁇ ⁇ 2 ]
- the specific surface is a surface which is a target of roughness measurement, and is a quadrilateral region which is specified by four points represented by the coordinates (x 1 , y 1 , f(x 1 , y 1 )), (x 1 , y 2 , f(x 1 , y 2 )), (x 2 , y 1 , f(x 2 , y 1 )), and (x 2 , y 2 , f(x 2 , y 2 )).
- S 0 represents the area of a rectangle which is obtained by projecting the specific surface on the xy plane
- Z 0 represents the average height of the specific surface.
- Ra can be measured using an atomic force microscope (AFM).
- a c-axis aligned crystalline oxide semiconductor (CAAC) film including crystallized parts may be used as each of the oxide semiconductor films 122 a and 122 c .
- the CAAC film means an oxide semiconductor film including crystals which have c-axis alignment and a triangular or hexagonal atomic arrangement when seen from the direction perpendicular to an a-b plane, a surface, or an interface.
- metal atoms are arranged in a layered manner, or metal atoms and oxygen atoms are arranged in a layered manner when seen from the direction perpendicular to the c-axis, and the directions of the a-axes or the b-axes are varied in the a-b plane (or the surface, or at the interface) (the crystal rotates around the c-axis).
- the CAAC film means a non-single-crystal film including a phase which has a triangular, hexagonal, regular triangular, or regular hexagonal atomic arrangement when seen from the direction perpendicular to the a-b plane and in which metal atoms are arranged in a layered manner, or metal atoms and oxygen atoms are arranged in a layered manner when seen from the direction perpendicular to the c-axis.
- the CAAC film is not single crystal, but this does not mean that the CAAC film is composed of only an amorphous component. Although the CAAC film includes crystallized portions (crystalline portions), a boundary between one crystalline portion and another crystalline portion is not clear in some cases.
- Nitrogen may be substituted for part of oxygen included in the CAAC film.
- the c-axes of individual crystalline portions included in the CAAC film may be aligned in one direction (e.g., the direction perpendicular to a surface of a substrate over which the CAAC film is formed, a surface of the CAAC film, an interface of the CAAC film, or the like).
- normals of the a-b planes of individual crystalline portions included in the CAAC film may be aligned in one direction (e.g., the direction perpendicular to the substrate surface or the surface or interface of the CAAC film).
- the CAAC film becomes a conductor, a semiconductor, or an insulator depending on its composition or the like.
- the CAAC transmits or does not transmit visible light depending on its composition or the like.
- an oxide semiconductor film having an amorphous structure is formed as each of the oxide semiconductor films 122 a and 122 c.
- each of the oxide semiconductor films 122 a and 122 c is greater than or equal to 1 nm and less than or equal to 50 nm, preferably greater than or equal to 1 nm and less than or equal to 30 nm, more preferably greater than or equal to 1 nm and less than or equal to 10 nm, still more preferably greater than or equal to 3 nm and less than or equal to 7 nm.
- the thickness of each of the oxide semiconductor films 122 a and 122 c is in the above range, whereby the shift of the threshold voltage of the transistors in the negative direction can be suppressed.
- the concentration of an alkali metal or an alkaline earth metal in each of the oxide semiconductor films 122 a and 122 c is preferably lower than or equal to 1 ⁇ 10 18 atoms/cm 3 , more preferably lower than or equal to 2 ⁇ 10 16 atoms/cm 3 . This is because an alkali metal and an alkaline earth metal are bonded to an oxide semiconductor and generate carriers in some cases, which causes an increase in the off-state current of the transistor.
- the first regions 123 a and 123 c of the oxide semiconductor films 122 a and 122 c may contain nitrogen at a concentration of lower than or equal to 5 ⁇ 10 18 atoms/cm 3 .
- the hydrogen concentration of each of the first regions 123 a and 123 c of the oxide semiconductor films 122 a and 122 c is preferably lower than 5 ⁇ 10 18 atoms/cm 3 , more preferably 1 ⁇ 10 18 atoms/cm 3 or lower, further preferably 5 ⁇ 10 17 atoms/cm 3 or lower, still further preferably 1 ⁇ 10 16 atoms/cm 3 or lower.
- part of contained hydrogen serves as a donor to generate electrons as carriers. For that reason, by a reduction in the concentration of hydrogen in each of the first regions 123 a and 123 c of the oxide semiconductor films 122 a and 122 c , the shift of the threshold voltage of the transistors in the negative direction can be reduced.
- the second regions 125 a to 125 d containing dopant contain, as the dopant, at least one of boron, nitrogen, phosphorus, and arsenic.
- the dopant at least one of helium, neon, argon, krypton, and xenon is contained.
- fluorine is contained as the dopant.
- at least one of boron, nitrogen, phosphorus, and arsenic at least one of helium, neon, argon, krypton, and xenon, and fluorine may be contained in appropriate combination.
- the concentration of the dopant in each of the second regions 125 a to 125 d containing dopant is higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than or equal to 1 ⁇ 10 22 atoms/cm 3 , preferably higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than 5 ⁇ 10 19 atoms/cm 3 .
- the conductivity can be higher than conductivity of the first regions 123 a and 123 c which do not contain dopant. Note that an excessive increase in the dopant concentration causes inhibition of carrier movement by the dopant, which leads to a reduction in conductivity of the second regions 125 a to 125 d containing dopant.
- Each of the second regions 125 a to 125 d containing dopant preferably has a conductivity of higher than or equal to 0.1 S/cm and lower than or equal to 1000 S/cm, preferably higher than or equal to 10 S/cm and lower than or equal to 1000 S/cm.
- the electrodes 115 a to 115 d are each formed to have a single-layer structure or a stacked-layer structure including, as a conductive material, any of metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten and an alloy containing any of these metals as a main component.
- a conductive material any of metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten and an alloy containing any of these metals as a main component.
- a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is stacked over an aluminum film, a two-layer structure in which a titanium film is stacked over a tungsten film, a two-layer structure in which a copper film is stacked over a copper-magnesium-aluminum alloy film, and a three-layer structure in which a titanium film, an aluminum film, and a titanium film are stacked in this order can be given.
- a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used.
- the electrodes 115 a to 115 d may also serve as wirings.
- the pair of electrodes 115 a and 115 b covers side surfaces, particularly side surfaces parallel to the channel width direction, and part of a top surface of the oxide semiconductor film 122 a
- the pair of electrodes 115 c and 115 d covers side surfaces, particularly side surfaces parallel to the channel width direction, and part of a top surface of the oxide semiconductor film 122 c ; therefore, contact areas between the pair of electrodes 115 a and 115 b and the oxide semiconductor film 122 a and between the pair of electrodes 115 c and 115 d and the oxide semiconductor film 122 c can be increased.
- the contact resistance between the oxide semiconductor film 122 a and the pair of electrodes 115 a and 115 b and between the oxide semiconductor film 122 c and the pair of electrodes 115 c and 115 d can be reduced, the channel width can be increased, and the on-state current of the transistors can be increased.
- the gate insulating film 117 may be formed with a single layer or a stack using one or more of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, a Ga—Zn—O-based metal oxide, and the like.
- the gate insulating film 117 may be an oxide insulating film from which oxygen is released by heating, such as a film applicable to the insulating film 103 . By using a film from which oxygen is released by heating as the gate insulating film 117 , oxygen defects caused in the oxide semiconductor films 122 a and 122 c can be reduced and deterioration of electric characteristics of the transistors can be suppressed.
- gate leakage current can be decreased even when the thickness of the gate insulating film is reduced.
- a high-k material such as hafnium silicate (HfSiO x ), hafnium silicate to which nitrogen is added (HfSi x O y N z ), hafnium aluminate to which nitrogen is added (HfAl x O y N z ), hafnium oxide, or yttrium oxide
- the thickness of the gate insulating film 117 is preferably greater than or equal to 10 nm and less than or equal to 300 nm, more preferably greater than or equal to 5 nm and less than or equal to 50 nm, still more preferably greater than or equal to 10 nm and less than or equal to 30 nm.
- the gate electrodes 119 a and 119 c can each be formed using a metal element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten; an alloy containing any of these metal elements as a component; an alloy containing these metal elements in combination; or the like. Further, one of or both manganese and zirconium may be used.
- the gate electrodes 119 a and 119 c may each have a single layer structure or a stacked structure of two or more layers.
- a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is stacked over an aluminum film, a two-layer structure in which a titanium film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a tantalum nitride film, a three-layer structure in which a titanium film, an aluminum film, and a titanium film are stacked in this order, and the like can be given.
- a film, an alloy film, or a nitride film which contains aluminum and one or more elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may be used.
- the gate electrodes 119 a and 119 c can each be formed using a light-transmitting conductive material such as indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, or indium tin oxide to which silicon oxide is added. It is also possible to have a stacked-layer structure formed using the above light-transmitting conductive material and the above metal element.
- an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Ga—O film containing nitrogen, an In—Zn—O film containing nitrogen, an Sn—O film containing nitrogen, an In—O film containing nitrogen, or a film of a metal nitride (such as InN or ZnN) is preferably provided between the gate electrodes 119 a and 119 c and the gate insulating film 117 .
- These films each have a work function of higher than or equal to 5 eV, preferably higher than or equal to 5.5 eV; thus, the threshold voltage in the electric characteristics of the transistors can be positive.
- an In—Ga—Zn—O film containing nitrogen an In—Ga—Zn—O film having at least a higher nitrogen concentration than the oxide semiconductor films 122 a and 122 c , or specifically, an In—Ga—Zn—O film having a nitrogen concentration of 7 at. % or higher can be used.
- the insulating film 127 may be formed with a single layer or a stack including one or more of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, and the like.
- the insulating film 127 may be formed using an oxide insulating film from which part of oxygen is released by heating in a manner similar to that of the insulating film 103 .
- oxygen released from the gate insulating film 117 can be supplied to the oxide semiconductor films 122 a and 122 c .
- oxide insulating film which prevents diffusion of hydrogen from the outside as the insulating film 127 , diffusion of hydrogen from the outside to the oxide semiconductor films 122 a and 122 c can be reduced, and oxygen defects in the oxide semiconductor films 122 a and 122 c can be reduced.
- oxide insulating film which prevents diffusion of hydrogen from the outside include films of silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, and the like.
- a region between the pair of facing electrodes 115 a and 115 b and a region between the pair of facing electrodes 115 c and 115 d can each have a linear shape, a U shape, a C shape, or the like.
- the channel width can be increased and thus the on-state current can be increased.
- cross-section A-B illustrates a manufacturing step of cross section A-B in FIG. 1
- cross section C-D illustrates a manufacturing step of cross-section C-D in FIG. 1 .
- the insulating film 103 and an oxide semiconductor film 105 are stacked over the substrate 101 .
- the insulating film 103 is formed by a sputtering method, a CVD method, or the like. It is preferable to use the oxide insulating film from which part of oxygen is released by heating because it is easily formed by a sputtering method.
- the amount of oxygen in a deposition gas is preferably large, and oxygen, a mixed gas of oxygen and a rare gas, or the like can be used.
- the oxygen concentration of a deposition gas is preferably higher than or equal to 6% and lower than or equal to 100%.
- the silicon oxide film is preferably formed by an RF sputtering method under the following conditions: quartz (preferably synthetic quartz) is used as a target; the substrate temperature is higher than or equal to 30° C. and lower than or equal to 450° C. (preferably higher than or equal to 70° C.
- the distance between the substrate and the target is greater than or equal to 20 mm and less than or equal to 400 mm (preferably greater than or equal to 40 mm and less than or equal to 200 mm);
- the pressure is higher than or equal to 0.1 Pa and lower than or equal to 4 Pa (preferably higher than or equal to 0.2 Pa and lower than or equal to 1.2 Pa);
- the high-frequency power is higher than or equal to 0.5 kW and lower than or equal to 12 kW (preferably higher than or equal to 1 kW and lower than or equal to 5 kW);
- the proportion of oxygen in the deposition gas (O 2 /(O 2 +Ar)) is higher than or equal to 1% and lower than or equal to 100% (preferably higher than or equal to 6% and lower than or equal to 100%).
- a silicon target may be used as the target instead of the quartz (preferably synthetic quartz) target.
- oxygen alone may be used as the deposition gas.
- hydrogen contained in the substrate is preferably released by heat treatment or plasma treatment. Consequently, in heat treatment performed later, diffusion of hydrogen to the insulating film 103 and the oxide semiconductor film 105 can be prevented.
- the heat treatment is performed at a temperature of higher than or equal to 100° C. and lower than the strain point of the substrate in an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere.
- rare gas, oxygen, nitrogen, or nitrogen oxide e.g., nitrous oxide, nitrogen monoxide, or nitrogen dioxide
- the insulating film 103 be planarized because an effect of preventing disconnection of the oxide semiconductor film 105 to be formed later can be obtained.
- the oxide semiconductor film 105 can be formed in such a manner that film formation is performed by a sputtering method, a coating method, a printing method, a pulsed laser deposition method, or the like and then heat treatment is performed.
- a sputtering apparatus used for forming the oxide semiconductor film 105 will be described in detail below.
- the leakage rate of a treatment chamber in which the oxide semiconductor film 105 is formed is preferably lower than or equal to 1 ⁇ 10 ⁇ 10 ° Pa ⁇ m 3 /sec., whereby entry of an impurity into the film to be formed by a sputtering method can be decreased.
- the external leakage refers to inflow of gas from the outside of a vacuum system through a minute hole, a sealing defect, or the like.
- the internal leakage is due to leakage through a partition, such as a valve, in a vacuum system or due to released gas from an internal member. Measures need to be taken from both aspects of external leakage and internal leakage in order that the leakage rate be lower than or equal to 1 ⁇ 10 ⁇ 10 ° Pa ⁇ m 3 /sec.
- an open/close portion of the treatment chamber is preferably sealed with a metal gasket.
- a metal material covered with iron fluoride, aluminum oxide, or chromium oxide is preferably used.
- the metal gasket realizes higher adhesion than an O-ring, and thus the external leakage can be reduced. Further, by use of a metal material covered with iron fluoride, aluminum oxide, chromium oxide, or the like which is in the passive state, a released gas containing hydrogen generated from the metal gasket is suppressed, so that the internal leakage can also be reduced.
- the above-mentioned member of the film formation apparatus may be covered with iron fluoride, aluminum oxide, chromium oxide, or the like which is in the passive state.
- the length of a pipe between the gas refiner and the treatment chamber is less than or equal to 5 m, preferably less than or equal to 1 m.
- the length of the pipe is less than or equal to 5 m or less than or equal to 1 m, the effect of the released gas from the pipe can be reduced accordingly.
- Evacuation of the treatment chamber is preferably performed with a rough vacuum pump, such as a dry pump, and a high vacuum pump, such as a sputter ion pump, a turbo molecular pump, or a cryopump, in appropriate combination.
- the turbo molecular pump has an outstanding capability in evacuating a large-sized molecule, whereas it has a low capability in evacuating hydrogen or water. Further, combination with a cryopump having a high capability in evacuating water or a sputter ion pump having a high capability in evacuating hydrogen is effective.
- an adsorbate present at the inner wall of the treatment chamber does not affect the pressure in the treatment chamber because it is adsorbed on the inner wall, but the adsorbate leads to release of a gas at the time of the evacuation of the treatment chamber. Therefore, although the leakage rate and the evacuation rate do not have a correlation, it is important that the adsorbate present in the treatment chamber be removed as much as possible and evacuation be performed in advance with the use of a pump having high evacuation capability.
- the treatment chamber may be subjected to baking for promotion of desorption of the adsorbate. By the baking, the rate of desorption of the adsorbate can be increased about tenfold. The baking should be performed at a temperature higher than or equal to 100° C. and lower than or equal to 450° C. At this time, when the adsorbate is removed while an inert gas is introduced, the rate of desorption of water or the like, which is difficult to desorb only by evacuation, can be further increased.
- entry of impurities is suppressed as much as possible through control of the pressure of the treatment chamber, leakage rate of the treatment chamber, and the like, whereby entry of impurities including hydrogen into the oxide semiconductor film can be reduced.
- diffusion of impurities such as hydrogen from the insulating film to the oxide semiconductor film can be reduced.
- Hydrogen contained in the oxide semiconductor reacts with oxygen bonded to a metal atom to produce water, and in addition, a defect is formed in a lattice from which oxygen is released (or a portion from which oxygen is removed).
- the impurities containing hydrogen are reduced as much as possible in the formation step of the oxide semiconductor film, whereby defects in the oxide semiconductor film can be reduced. Therefore, when a channel region is formed in an oxide semiconductor film which is purified by removing impurities as much as possible, the transistor can have higher reliability.
- an RF power supply device In a sputtering method, an RF power supply device, an AC power supply device, a DC power supply device, or the like can be used as a power supply device for generating plasma as appropriate.
- any of the following can be used: indium oxide; tin oxide; zinc oxide; a two-component metal oxide such as an In—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide, a Zn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, or an In—Ga-based oxide; a three-component metal oxide such as an In—Ga—Zn-based oxide, an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide, a Sn—Ga—Zn-based oxide, an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-based oxide, an In—Zr—Zn-based oxide, an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-based oxide, an Indium oxide; tin oxide
- a rare gas (typically argon) atmosphere, an oxygen atmosphere, or a mixed gas of a rare gas and oxygen is used as appropriate.
- the proportion of oxygen is preferably higher than that of a rare gas. It is preferable that a high-purity gas from which impurities containing hydrogen are removed be used as a sputtering gas.
- the substrate temperature is higher than or equal to 150° C. and lower than or equal to 450° C., preferably higher than or equal to 200° C. and lower than or equal to 350° C., whereby entry of moisture (including hydrogen) into the oxide semiconductor film can be prevented and the CAAC film can be formed.
- a region of the insulating film 103 which is in contact with the oxide semiconductor film, may be formed using an aluminum oxide film. Moreover, after the oxide semiconductor film 105 is formed, the oxide semiconductor film 105 may be irradiated with laser light. Through this step, the CAAC film can be formed from the interface with the insulating film 103 .
- a dummy substrate may be put into the sputtering apparatus, and an oxide semiconductor film may be formed over the dummy substrate, so that hydrogen and moisture attached to the target surface or a deposition shield may be removed.
- Hydrogen can be released from the oxide semiconductor film in such a manner that the substrate 101 is subjected to heat treatment after the oxide semiconductor film is formed over the substrate 101 by the above method. Note that in the heat treatment, oxygen is also released from the oxide semiconductor film and oxygen defects remain in the oxide semiconductor film in some cases.
- the insulating film 103 In the case where an oxide insulating film from which part of oxygen is released by heating is used as the insulating film 103 , hydrogen is released from the oxide semiconductor film and part of oxygen contained in the insulating film 103 is diffused to the oxide semiconductor film and the vicinity of the interface between the insulating film 103 and the oxide semiconductor film by performing heat treatment on the substrate 101 after the oxide semiconductor film is formed over the substrate 101 by the above method. By the heat treatment, oxygen contained in the insulating film 103 is diffused to the oxide semiconductor film to reduce oxygen defects at the vicinity of the interface between the oxide semiconductor film and the insulating film.
- oxygen defects are in the oxide semiconductor film.
- the oxygen defects particularly largely affect a transistor having a minute structure in which the channel length has a submicron size, which causes negative shift of the threshold voltage.
- Hydrogen contained in the oxide semiconductor reacts with oxygen bonded to a metal atom to produce water, and in addition, a defect is formed in a lattice from which oxygen is released (or a portion from which oxygen is released). Therefore, the impurities containing hydrogen are reduced as much as possible by the heat treatment, whereby defects due to hydrogen in the oxide semiconductor film can be reduced.
- the oxide semiconductor film 105 in which at least the hydrogen concentration is reduced can be formed.
- the temperature of the heat treatment is preferably a temperature at which at least hydrogen is released from the oxide semiconductor film, more preferably a temperature at which hydrogen is released from the oxide semiconductor film and part of oxygen contained in the insulating film 103 is released and diffused to the oxide semiconductor film.
- the temperature is typically higher than or equal to 150° C. and lower than the strain point of the substrate, preferably higher than or equal to 250° C. and lower than or equal to 450° C., more preferably higher than or equal to 300° C. and lower than or equal to 450° C.
- a rapid thermal annealing (RTA) apparatus can be used for the heat treatment.
- RTA rapid thermal annealing
- the heat treatment can be performed at a temperature higher than or equal to the strain point of the substrate if the heating time is short. Therefore, time to release hydrogen from the oxide semiconductor film and to diffuse oxygen from the insulating film 103 to the oxide semiconductor film can be shortened.
- the heat treatment can be performed in an inert gas atmosphere; typically the heat treatment is preferably performed in a rare gas (such as helium, neon, argon, xenon, or krypton) atmosphere or a nitrogen atmosphere. Alternatively, the heat treatment may be performed in an oxygen atmosphere or a reduced-pressure atmosphere.
- the treatment time is 3 minutes to 24 hours.
- the oxide semiconductor films 107 a and 107 c are formed.
- the oxide semiconductor films 107 a and 107 c are formed in such a manner that a mask is formed over the oxide semiconductor film 105 and part of the oxide semiconductor film 105 is selectively etched.
- a mask 109 is formed over the oxide semiconductor film 107 c which is part of the transistor having high field-effect mobility and large on-state current, and then oxygen 111 is added to the oxide semiconductor film 107 a .
- an oxide semiconductor film 113 a in which oxygen defects are reduced as compared to the oxide semiconductor film 107 c is formed (see FIG. 2D ). Then, the mask 109 is removed.
- Oxygen can be added to the oxide semiconductor film 107 a by an ion doping method or an ion implantation method.
- a plasma immersion ion implantation method may be used as a method for adding oxygen.
- the oxygen can be added efficiently even when the oxide semiconductor film 107 a has an uneven shape.
- oxygen can be added by a method other than an ion doping method, an ion implantation method, or the like.
- oxygen can be added in such a manner that plasma is generated in an oxygen atmosphere and then the oxide semiconductor film 107 a is subjected to plasma treatment in the oxygen atmosphere.
- a dry etching apparatus, a plasma CVD apparatus, a high-density plasma CVD apparatus, or the like can be used as an apparatus for generating plasma.
- At least one of an oxygen radical, an oxygen atom, and an oxygen ion is added to the oxide semiconductor film 107 a as the oxygen 111 . Further, the oxygen 111 is added to at least part of the oxide semiconductor film 107 a , typically a surface of or the inside of the oxide semiconductor film 107 a or the interface between the oxide semiconductor film 107 a and the insulating film 103 .
- the amount of oxygen added to the oxide semiconductor film 107 a is larger than or equal to 5 ⁇ 10 19 /cm 3 and smaller than or equal to 5 ⁇ 10 21 /cm 3 .
- the oxygen 111 when the oxygen 111 has high energy, the oxide semiconductor film is damaged and physical defects are caused. Therefore, the oxygen 111 preferably has such energy which does not cause damage on the oxide semiconductor film.
- the oxide semiconductor film 113 a to which oxygen is added includes a region containing oxygen in excess of the stoichiometric ratio. Excess oxygen exists between lattices of the oxide semiconductor in some cases.
- the composition of such an oxide semiconductor can be expressed by InGaZn m O (m+3x) (x>1, m ⁇ 1).
- oxygen is one of main component materials.
- SIMS secondary ion mass spectrometry
- oxygen has isotopes such as 17 O and 18 O and the proportions of 17 O and 18 O in all of the oxygen atoms in nature is about 0.037% and about 0.204%, respectively. That is to say, it is possible to measure the concentrations of these isotopes in the oxide semiconductor film by a method such as SIMS; therefore, the oxygen concentration of the oxide semiconductor film may be able to be estimated more accurately by measuring the concentrations of these isotopes. Thus, the concentration of the isotope may be measured to determine whether or not oxygen is intentionally added to the oxide semiconductor film.
- the oxygen defects in the oxide semiconductor film 113 a can be reduced by addition of oxygen to the oxide semiconductor film 107 a .
- oxygen is not added to the oxide semiconductor film 107 c , so that the oxygen defects remains in the oxide semiconductor film 107 c more than in the oxide semiconductor film 113 a.
- the pair of electrodes 115 a and 115 b is formed over the oxide semiconductor film 113 a and the pair of electrodes 115 c and 115 d is formed over the oxide semiconductor film 107 c .
- the gate insulating film 117 covering the electrodes 115 a to 115 d and the oxide semiconductor films 113 a and 107 c is formed.
- the electrodes 115 a to 115 d are formed by a printing method or an inkjet method.
- the electrodes 115 a to 115 d are formed in such a manner that after a conductive film is formed by a sputtering method, a CVD method, an evaporation method, or the like, a mask is formed over the conductive film and the conductive film is etched.
- the mask formed over the conductive film can be formed by a printing method, an inkjet method, or a photolithography method as appropriate. In the case of forming the electrodes 115 a to 115 d with the use of a mask, the mask is removed later.
- the gate insulating film 117 is formed by a sputtering method, a CVD method, or the like.
- the gate electrodes 119 a and 119 c are formed over the gate insulating film 117 .
- the gate electrodes 119 a and 119 c are formed by a printing method or an inkjet method.
- the gate electrodes 119 a and 119 c are formed in such a manner that after a conductive film is formed by a sputtering method, a CVD method, an evaporation method, or the like, a mask is formed over the conductive film and the conductive film is etched.
- the mask formed over the conductive film can be formed by a printing method, an inkjet method, or a photolithography method as appropriate. In the case of forming the gate electrodes 119 a and 119 c with the use of a mask, the mask is removed later.
- treatment for adding dopant 121 to the oxide semiconductor films 113 a and 107 c is performed with the use of the gate electrodes 119 a and 119 c as masks.
- the pair of second regions 125 a and 125 b containing dopant is formed in cross section A-B. Since the dopant is added with the use of the gate electrode 119 a as a mask, the pair of second regions 125 a and 125 b containing dopant and the first region 123 a to which the dopant is not added can be formed in a self-aligned manner.
- the first region 123 a which overlaps with the gate electrode 119 a serves as a channel region. Regions in the pair of second regions 125 a and 125 b containing dopant, which overlap with the pair of electrodes 115 a and 115 b , serve as a source region and a drain region. Further, source-drain breakdown voltage can be increased with regions in the pair of second regions 125 a and 125 b containing dopant, which are not in contact with the pair of electrodes 115 a and 115 b .
- the oxide semiconductor film 122 a includes the first region 123 a and the pair of second regions 125 a and 125 b containing dopant.
- the pair of second regions 125 c and 125 d containing dopant is formed. Since the dopant is added with the use of the gate electrode 119 c as a mask, the pair of second regions 125 c and 125 d containing dopant and the first region 123 c to which the dopant is not added can be formed in a self-aligned manner.
- the first region 123 c which overlaps with the gate electrode 119 c serves as a channel region. Regions in the pair of second regions 125 c and 125 d containing dopant, which overlap with the pair of electrodes 115 c and 115 d , serve as a source region and a drain region.
- source-drain breakdown voltage can be increased with regions in the pair of second regions 125 c and 125 d containing dopant, which are not in contact with the pair of electrodes 115 c and 115 d .
- the oxide semiconductor film 122 c includes the first region 123 c and the pair of second regions 125 c and 125 d containing dopant.
- the dopant passing through the electrodes 115 a to 115 d is added to part of the second regions 125 a to 125 d . Even when defects due to damage by the energy of the dopant are caused in the second regions 125 a to 125 d , the defects serve as a source of generation of carriers and the film resistance is reduced; therefore, the energy of the dopant can be increased as compared to the case of addition of the oxygen 111 illustrated in FIG. 2C .
- an ion doping method or an ion implantation method can be used as a method for adding the dopant to the oxide semiconductor films 113 a and 107 c .
- the dopant at least one of boron, nitrogen, phosphorus, and arsenic can be added.
- the dopant at least one of helium, neon, argon, krypton, and xenon can be added. Further alternatively, fluorine may be added as the dopant.
- At least one of boron, nitrogen, phosphorus, and arsenic at least one of helium, neon, argon, krypton, and xenon, and fluorine may be added in combination as appropriate.
- the dopant is added to the oxide semiconductor films 113 a and 107 c in a state where the oxide semiconductor films 113 a and 107 c are covered with the insulating film and the like; alternatively, the dopant may be added in a state where the oxide semiconductor films 113 a and 107 c are exposed.
- the dopant can be added by a method other than an ion doping method, an ion implantation method, or the like.
- dopant can be added in the following manner: plasma is generated in an atmosphere of a gas containing an element to be added and plasma treatment is performed on an object to which the dopant is added.
- a dry etching apparatus, a plasma CVD apparatus, or the like can be used as an apparatus for generating plasma.
- heat treatment may be performed.
- the heat treatment is performed typically at a temperature of higher than or equal to 150° C. and lower than or equal to 450° C., preferably higher than or equal to 300° C. and lower than or equal to 450° C.
- the heat treatment may be performed while the temperature is gradually increased from 150° C. to 450° C.
- the resistance of the second regions 125 a to 125 d containing dopant can be reduced.
- the second regions 125 a to 125 d containing dopant may be in either a crystalline state or an amorphous state.
- oxygen is diffused from the gate insulating film 117 into the oxide semiconductor films, so that the oxygen defects contained in the oxide semiconductor films can be reduced. Note that the amount of oxygen diffused into the oxide semiconductor films in this step is smaller than the amount of oxygen added in the step illustrated in FIG. 2C . Therefore, oxygen defects in the oxide semiconductor film 122 c are reduced but still remain.
- the insulating film 127 can be formed in a manner similar to that of the gate insulating film 117 .
- the transistors 120 a and 120 c illustrated in FIG. 1 can be manufactured.
- the oxide semiconductor film can be highly purified and become an electrically i-type (intrinsic) semiconductor.
- the oxygen defects which are not removed by the heat treatment in the oxide semiconductor film or at the interface can be reduced and the donor level in the energy gap due to the oxygen defects can be reduced or substantially removed. Accordingly, the current at negative gate voltage of the transistor 120 a can be reduced.
- Oxygen is added to the oxide semiconductor film 122 a included in the transistor 120 a in this embodiment and the oxide semiconductor film 122 a includes fewer oxygen defects. Therefore, the current at negative gate voltage of the transistor 120 a is small.
- oxygen is not added to the oxide semiconductor film 122 c included in the transistor 120 c and the oxide semiconductor film 122 c includes oxygen defects. Therefore, carriers are easily generated in the transistor 120 c in an on state. Accordingly, the transistor 120 c has high field-effect mobility and large on-state current.
- a transistor having small current at negative gate voltage and a transistor having high field-effect mobility and large on-state current can be manufactured over the same substrate.
- a transistor having a structure different from that of Embodiment 1 and a method for manufacturing the transistor will be described with reference to FIGS. 2A to 2D , FIG. 4 , and FIGS. 5A to 5C .
- Coplanar transistors each having a top gate structure are described in this embodiment.
- FIG. 4 is a cross-sectional view of a semiconductor device described in this embodiment.
- the semiconductor device illustrated in FIG. 4 includes a transistor 130 a having small current at negative gate voltage and a transistor 130 c having high field-effect mobility and large on-state current.
- the transistor 130 a having small current at negative gate voltage includes the insulating film 103 over the substrate 101 , the oxide semiconductor film 122 a over the insulating film 103 , the gate insulating film 117 covering the oxide semiconductor film 122 a , and the gate electrode 119 a which is provided over the gate insulating film 117 and overlaps with the oxide semiconductor film 122 a .
- the insulating film 127 and an insulating film 131 are stacked over the gate insulating film 117 and the gate electrode 119 a .
- a pair of electrodes 133 a and 133 b which is formed in opening portions formed in the gate insulating film 117 , the insulating film 127 , and the insulating film 131 and in contact with the oxide semiconductor film 122 a is included.
- the oxide semiconductor film 122 a has a structure similar to that in Embodiment 1 and includes the first region 123 a overlapping with the gate electrode 119 a and the pair of second regions 125 a and 125 b between which the first region 123 a is sandwiched and which contains dopant.
- the transistor 130 c having high field-effect mobility and large on-state current includes the insulating film 103 over the substrate 101 , the oxide semiconductor film 122 c over the insulating film 103 , the gate insulating film 117 covering the oxide semiconductor film 122 c , and the gate electrode 119 c which is provided over the gate insulating film 117 and overlaps with the oxide semiconductor film 122 c .
- the insulating film 127 and an insulating film 131 are stacked over the gate insulating film 117 and the gate electrode 119 c .
- a pair of electrodes 133 c and 133 d which is formed in opening portions formed in the gate insulating film 117 , the insulating film 127 , and the insulating film 131 and in contact with the oxide semiconductor film 122 c is included.
- the oxide semiconductor film 122 c has a structure similar to that in Embodiment 1 and includes the first region 123 c overlapping with the gate electrode 119 c and the pair of second regions 125 c and 125 d between which the first region 123 c is sandwiched and which contains dopant.
- Oxygen is added to the oxide semiconductor film 122 a and oxygen is not added to the oxide semiconductor film 122 c .
- the oxide semiconductor film 122 a includes fewer oxygen defects than the oxide semiconductor film 122 c.
- the insulating film 127 covering the transistors 130 a and 130 c be formed.
- the transistor described in this embodiment is a coplanar transistor, so that the transistor can be miniaturized.
- the insulating film 131 can be formed in a manner similar to that of the insulating film 127 .
- the insulating film 131 is formed using an inorganic material such as borophosphosilicate glass (BPSG), or an organic material such as polyimide or acrylic, planarity of the insulating film 131 can be increased.
- BPSG borophosphosilicate glass
- acrylic organic material
- the electrodes 133 a to 133 d can be formed using a material similar to that of the electrodes 115 a to 115 d in Embodiment 1 as appropriate.
- cross-section A-B illustrates a manufacturing step of cross section A-B in FIG. 4
- cross section C-D illustrates a manufacturing step of cross-section C-D in FIG. 4 .
- the insulating film 103 is formed over the substrate 101 as illustrated in FIG. 5A .
- the oxide semiconductor films 113 a and 107 c are formed over the insulating film 103 .
- the oxide semiconductor films 113 a and 107 c are oxide semiconductor films which are subjected to heat treatment for dehydrogenation treatment.
- the gate electrodes 119 a and 119 c are formed over the gate insulating film 117 .
- the pair of second regions 125 a and 125 b containing dopant is formed in cross section A-B. Since the dopant is added with the use of the gate electrode 119 a as a mask, the pair of second regions 125 a and 125 b containing dopant and the first region 123 a to which the dopant is not added can be formed in a self-aligned manner.
- the first region 123 a which overlaps with the gate electrode 119 a serves as a channel region.
- the oxide semiconductor film 122 a includes the first region 123 a and the pair of second regions 125 a and 125 b containing dopant.
- the pair of second regions 125 c and 125 d containing dopant is formed. Since the dopant is added with the use of the gate electrode 119 c as a mask, the pair of second regions 125 c and 125 d containing dopant and the first region 123 c to which the dopant is not added can be formed in a self-aligned manner.
- the first region 123 c which overlaps with the gate electrode 119 c serves as a channel region.
- the oxide semiconductor film 122 c includes the first region 123 c and the pair of second regions 125 c and 125 d containing dopant.
- heat treatment may be performed.
- the insulating film 127 and the insulating film 131 are formed over the gate insulating film 117 and the gate electrodes 119 a and 119 c .
- the insulating film 131 can be formed by a sputtering method, a CVD method, a coating method, a printing method, or the like as appropriate.
- the gate insulating film 117 , the insulating film 127 , and the insulating film 131 are removed, so that the opening portions are formed.
- the pair of electrodes 133 a and 133 b which is in contact with the pair of second regions 125 a and 125 b in the oxide semiconductor film 122 a through the opening portions and the pair of electrodes 133 c and 133 d which is in contact with the pair of second regions 125 c and 125 d in the oxide semiconductor film 122 c through the opening portions are formed.
- the electrodes 133 a to 133 d are formed in a manner similar to that of the electrodes 115 a to 115 d.
- oxygen is selectively added to an oxide semiconductor film after a dehydrogenation step, so that a transistor having small current at negative gate voltage and a transistor having high field-effect mobility and large on-state current can be manufactured over the same substrate.
- a transistor having a structure different from the structures of Embodiments 1 and 2 and a method for manufacturing the transistor will be described with reference to FIGS. 2A to 2D , FIG. 6 , FIGS. 7A to 7C , and FIGS. 8A to 8C .
- the transistor described in this embodiment includes an oxide semiconductor film having a structure different from that in Embodiment 1.
- FIG. 6 is a cross-sectional view of a semiconductor device described in this embodiment.
- the semiconductor device illustrated in FIG. 6 includes a transistor 150 a having small current at negative gate voltage and a transistor 150 c having high field-effect mobility and large on-state current.
- the transistor 150 a having small current at negative gate voltage includes the insulating film 103 over the substrate 101 , an oxide semiconductor film 146 a over the insulating film 103 , the pair of electrodes 115 a and 115 b which is in contact with the oxide semiconductor film 146 a and serves as a source electrode and a drain electrode, the gate insulating film 117 covering the oxide semiconductor film 146 a , and the gate electrode 119 a which is provided over the gate insulating film 117 and overlaps with the oxide semiconductor film 146 a .
- the oxide semiconductor film 146 a includes a first region 147 a overlapping with the gate electrode 119 a , a pair of second regions 149 a and 149 b between which the first region 147 a is sandwiched and which contains dopant, and a pair of third regions 151 a and 151 b between which the pair of second regions is sandwiched and which contains dopant.
- the first region 147 a serves as a channel region
- the pair of second regions 149 a and 149 b containing dopant serves as electric-field relaxation regions
- the pair of third regions 151 a and 151 b containing dopant serves as a source region and a drain region.
- the transistor 150 c having high field-effect mobility and large on-state current includes the insulating film 103 over the substrate 101 , an oxide semiconductor film 146 c over the insulating film 103 , the pair of electrodes 115 c and 115 d which is in contact with the oxide semiconductor film 146 c and serves as a source electrode and a drain electrode, the gate insulating film 117 covering the oxide semiconductor film 146 c , and the gate electrode 119 c which is provided over the gate insulating film 117 and overlaps with the oxide semiconductor film 146 a .
- the oxide semiconductor film 146 c includes a first region 147 c overlapping with the gate electrode 119 c , a pair of second regions 149 c and 149 d between which the first region 147 c is sandwiched and which contains dopant, and a pair of third regions 151 c and 151 d between which the pair of second regions is sandwiched and which contains dopant.
- the first region 147 c serves as a channel region
- the pair of second regions 149 c and 149 d containing dopant serves as electric-field relaxation regions
- the pair of third regions 151 c and 151 d containing dopant serves as a source region and a drain region.
- the insulating film 127 covering the transistors 150 a and 150 c be formed.
- the oxygen concentration of the first region 147 a and the oxygen concentration of the pair of second regions 149 a and 149 b are higher than that of the pair of third regions 151 a and 151 b . This is because oxygen is added to the oxide semiconductor films 107 a and 107 c after the electrodes 115 a to 115 d are formed.
- the concentration of oxygen added to the first region 147 a is higher than or equal to 5 ⁇ 10 19 /cm 3 and lower than or equal to 5 ⁇ 10 21 /cm 3 .
- the concentration of oxygen added to the pair of second regions 149 a and 149 b is higher than or equal to 1 ⁇ 10 18 /cm 3 and lower than or equal to 5 ⁇ 10 21 /cm 3 and the dopant concentration of the pair of second regions 149 a and 149 b is higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than or equal to 1 ⁇ 10 22 atoms/cm 3 , preferably higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than 5 ⁇ 10 19 atoms/cm 3 .
- the dopant concentration of the pair of third regions 151 a and 151 b is higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than or equal to 1 ⁇ 10 22 atoms/cm 3 , preferably higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than 5 ⁇ 10 19 atoms/cm 3 .
- oxygen is not added to the first region 147 c , the pair of second regions 149 c and 149 d , and the pair of third regions 151 c and 151 d in the oxide semiconductor film 146 c .
- the oxygen concentration of the first region 147 c , the oxygen concentration of the pair of second regions 149 c and 149 d , and the oxygen concentration of the pair of third regions 151 c and 151 d are lower than the oxygen concentration of the first region 147 a and the oxygen concentration of the pair of second regions 149 a and 149 b in the oxide semiconductor film 146 a .
- the dopant concentration of the pair of second regions 149 c and 149 d and the dopant concentration of the pair of third regions 151 c and 151 d are each higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than or equal to 1 ⁇ 10 22 atoms/cm 3 , preferably higher than or equal to 5 ⁇ 10 18 atoms/cm 3 and lower than 5 ⁇ 10 19 atoms/cm 3 .
- the transistor 150 a described in this embodiment oxygen is not added to the pair of third regions 151 a and 151 b serving as a source region and a drain region. In other words, oxygen defects remain in those regions. Therefore, carriers are easily generated in the pair of third regions 151 a and 151 b and film resistance can be reduced. On the other hand, oxygen is added to the first region 147 a and the pair of second regions 149 a and 149 b ; thus, oxygen defects are reduced. Accordingly, the transistor 150 a has small current at negative gate voltage and larger on-state current than the transistors 120 a and 130 a in Embodiments 1 and 2.
- cross-section A-B illustrates a manufacturing step of cross section A-B in FIG. 6
- cross section C-D illustrates a manufacturing step of cross-section C-D in FIG. 6 .
- the insulating film 103 is formed over the substrate 101 as illustrated in FIG. 7A .
- the oxide semiconductor films 107 a and 107 c are formed over the insulating film 103 .
- the oxide semiconductor films 107 a and 107 c are oxide semiconductor films which are subjected to heat treatment for dehydrogenation treatment.
- the electrodes 115 a to 115 d are formed over the oxide semiconductor films 107 a and 107 c by a method similar to that in Embodiment 1.
- the gate insulating film 117 is formed over the oxide semiconductor films 107 a and 107 c and the electrodes 115 a to 115 d by a method similar to that in Embodiment 1.
- the mask 109 is formed over the oxide semiconductor film 107 c which is part of the transistor having high field-effect mobility and large on-state current, and then oxygen 141 is added to the oxide semiconductor film 107 a .
- the oxygen 141 can be added in a manner similar to that of the oxygen 111 in Embodiment 1. Then, the mask 109 is removed.
- oxygen is added to the oxide semiconductor film 107 a through the gate insulating film 117 ; therefore, a region to which oxygen is added (depth to which oxygen is implanted) can be controlled more easily, leading to efficient addition of oxygen to the oxide semiconductor film 107 a.
- oxygen is added to a region of the oxide semiconductor film 107 a , which does not overlap with either of the pair of electrodes 115 a and 115 b .
- a region 143 a to which oxygen is added and regions 145 a and 145 b to which oxygen is not added can be formed.
- the region 143 a includes fewer oxygen defects than the oxide semiconductor film 107 c and the regions 145 a and 145 b.
- the gate electrodes 119 a and 119 c are formed. Then, in a manner similar to that in Embodiment 1, the dopant 121 is added to the region 143 a and the regions 145 a and 145 b in the oxide semiconductor film to which oxygen is added and the oxide semiconductor film 107 c with the use of the gate electrodes 119 a and 119 c as masks.
- the pair of second regions 149 a and 149 b containing dopant and the pair of third regions 151 a and 151 b containing dopant are formed in cross section A-B. Since the dopant is added with the use of the gate electrode 119 a as a mask, the pair of second regions 149 a and 149 b containing dopant, the pair of third regions 151 a and 151 b containing dopant, and the first region 147 a to which the dopant is not added can be formed in a self-aligned manner.
- the first region 147 a which overlaps with the gate electrode 119 a serves as a channel region.
- the pair of the second regions 149 a and 149 b containing dopant serves as electric-field relaxation regions.
- the pair of third regions 151 a and 151 b containing dopant serves as a source region and a drain region.
- the oxide semiconductor film 146 a includes the first region 147 a , the pair of second regions 149 a and 149 b containing dopant, and the pair of third regions 151 a and 151 b containing dopant.
- the pair of second regions 149 c and 149 d containing dopant and the pair of third regions 151 c and 151 d containing dopant are formed in cross section C-D. Since the dopant is added with the use of the gate electrode 119 c as a mask, the pair of second regions 149 c and 149 d containing dopant, the pair of third regions 151 c and 151 d containing dopant, and the first region 147 c to which the dopant is not added can be formed in a self-aligned manner.
- the first region 147 c which overlaps with the gate electrode 119 c serves as a channel region.
- the pair of the second regions 149 c and 149 d containing dopant serves as electric-field relaxation regions.
- the pair of third regions 151 c and 151 d containing dopant serves as a source region and a drain region.
- the oxide semiconductor film 146 c includes the first region 147 c , the pair of second regions 149 c and 149 d containing dopant, and the pair of third regions 151 c and 151 d containing dopant.
- heat treatment may be performed.
- the transistors 150 a and 150 c illustrated in FIG. 6 can be manufactured.
- the insulating film 127 and the insulating film 131 are formed over the gate insulating film 117 and the gate electrodes 119 a and 119 c in a manner similar to that in Embodiment 2.
- parts of the gate insulating film 117 , the insulating film 127 , and the insulating film 131 are removed, so that the opening portions are formed.
- the pair of electrodes 133 a and 133 b which is in contact with the pair of electrodes 115 a and 115 b through the opening portions and the pair of electrode 133 c and 133 d which is in contact with the pair of electrodes 115 c and 115 d through the opening portions may be formed.
- oxygen is selectively added to an oxide semiconductor film after a dehydrogenation step, so that a transistor having small current at negative gate voltage and a transistor having high field-effect mobility and large on-state current can be manufactured over the same substrate.
- a transistor having a structure different from the structures of Embodiments 1 to 3 and a method for manufacturing the transistor will be described with reference to FIGS. 2A to 2D , FIG. 9 , and FIGS. 10A to 10C .
- the transistor described in this embodiment is different from those described in Embodiments 1 to 3 in that sidewall insulating films are provided on side surfaces of a gate electrode.
- FIG. 9 is a cross-sectional view of a semiconductor device described in this embodiment.
- the semiconductor device illustrated in FIG. 9 includes a transistor 160 a having small current at negative gate voltage and a transistor 160 c having high field-effect mobility and large on-state current.
- the transistor 160 a having small current at negative gate voltage includes the insulating film 103 over the substrate 101 , the oxide semiconductor film 122 a over the insulating film 103 , a pair of electrodes 165 a and 165 b which is in contact with the oxide semiconductor film 122 a and serves as a source electrode and a drain electrode, a gate insulating film 163 a covering part of the oxide semiconductor film 122 a , the gate electrode 119 a which is provided over the gate insulating film 163 a and overlaps with the oxide semiconductor film 122 a , and sidewall insulating films 161 a and 161 b which are provided on side surfaces of the gate electrode 119 a .
- the pair of electrodes 165 a and 165 b is in contact with side surfaces and part of a top surface of the oxide semiconductor film 122 a and side surfaces of the sidewall insulating films 161 a and 161 b . Therefore, regions of the pair of second regions 125 a and 125 b , which are in contact with the pair of electrodes 165 a and 165 b , serve as a source region and a drain region. Further, source-drain breakdown voltage can be increased with regions which are in contact with the gate insulating film 163 a.
- the transistor 160 c having high field-effect mobility and large on-state current includes the insulating film 103 over the substrate 101 , the oxide semiconductor film 122 c over the insulating film 103 , a pair of electrodes 165 c and 165 d which is in contact with the oxide semiconductor film 122 c and serves as a source electrode and a drain electrode, a gate insulating film 163 c covering part of the oxide semiconductor film 122 c , the gate electrode 119 c which is provided over the gate insulating film 163 c and overlaps with the oxide semiconductor film 122 c , and sidewall insulating films 161 c and 161 d which are provided on side surfaces of the gate electrode 119 c .
- the pair of electrodes 165 c and 165 d is in contact with side surfaces and part of a top surface of the oxide semiconductor film 122 c and side surfaces of the sidewall insulating films 161 c and 161 d . Therefore, regions of the pair of second regions 125 c and 125 d , which are in contact with the pair of electrodes 165 c and 165 d , serve as a source region and a drain region. Further, source-drain breakdown voltage can be increased with regions which are in contact with the gate insulating film 163 c.
- Oxygen is added to the oxide semiconductor film 122 a and oxygen is not added to the oxide semiconductor film 122 c .
- the oxide semiconductor film 122 a includes fewer oxygen defects than the oxide semiconductor film 122 c.
- the insulating film 127 covering the transistors 160 a and 160 c be formed.
- the transistor 160 a includes the sidewall insulating films 161 a and 161 b and the transistor 160 c includes the sidewall insulating films 161 c and 161 d .
- the widths of the sidewall insulating films 161 a to 161 d can be controlled, so that high accuracy in alignment of a mask for forming the electrodes 165 a to 165 d is not strictly required. Accordingly, variation among plural transistors can be reduced.
- cross-section A-B illustrates a manufacturing step of cross section A-B in FIG. 9
- cross section C-D illustrates a manufacturing step of cross-section C-D in FIG. 9 .
- the insulating film 103 is formed over the substrate 101 . Then, the oxide semiconductor films 122 a and 122 c are formed over the insulating film 103 . Further, the gate insulating film 117 and the gate electrodes 119 a and 119 c are formed over the oxide semiconductor films 122 a and 122 c . Note that the oxide semiconductor films 122 a and 122 c are oxide semiconductor films which are subjected to heat treatment for dehydrogenation treatment.
- an insulating film to be the sidewall insulating films 161 a to 161 d is formed over the gate insulating film 117 and the gate electrodes 119 a and 119 c .
- the insulating film is formed by a sputtering method, a CVD method, or the like. There is no particular limitation on the thickness of the insulating film, and the thickness is determined as appropriate so that the insulating film can cover the gate electrodes 119 a and 119 c.
- the sidewall insulating films 161 a to 161 d are formed by etching the insulating film.
- the etching here is highly anisotropic etching, and the sidewall insulating films 161 a to 161 d can be formed in a self-aligned manner by performing the highly anisotropic etching on the insulating film.
- dry etching is preferably employed as highly anisotropic etching, and a gas including fluorine such as trifluoromethane (CHF 3 ), octafluorocyclobutane (C 4 F 8 ), or tetrafluoromethane (CF 4 ) can be used as an etching gas.
- a gas including fluorine such as trifluoromethane (CHF 3 ), octafluorocyclobutane (C 4 F 8 ), or tetrafluoromethane (CF 4 ) can be used as an etching gas.
- a rare gas such as helium (He) or argon (Ar) or hydrogen (H 2 ) may be added to the etching gas.
- a reactive ion etching (RIE) method in which high-frequency voltage is applied to a substrate is preferably used.
- the distance between a channel and a source or a drain depends on the width of the sidewall insulating films 161 a to 161 d
- the width of the sidewall insulating films 161 a to 161 d depends on the thickness of the gate electrodes 119 a and 119 c . Therefore, the thickness of the gate electrodes 119 a and 119 c is determined so that the width of the sidewall insulating films 161 a to 161 d is in the desirable range.
- the gate insulating film 117 is etched by the highly anisotropic etching to expose the oxide semiconductor films 122 a and 122 c ; thus, the gate insulating films 163 a and 163 c can be formed (see FIG. 10A ).
- the pair of electrodes 165 a and 165 b and the pair of electrodes 165 c and 165 d are formed.
- the electrodes 165 a to 165 d can be formed in a manner similar to that of the electrodes 115 a to 115 d described in Embodiment 1.
- the electrodes 165 a to 165 d are preferably formed to be in contact with side surfaces of the sidewall insulating films 161 a to 161 d and side surfaces of the gate insulating films 163 a and 163 c .
- end portions of the electrodes 165 a to 165 d of the transistors be positioned over the sidewall insulating films 161 a to 161 d , and that exposed portions of the second regions 125 a to 125 d containing dopant in the oxide semiconductor films 122 a and 122 c be entirely covered with the electrodes 165 a to 165 d . Consequently, regions of the second regions 125 a to 125 d containing dopant, which are in contact with the electrodes 165 a to 165 d , function as a source region and a drain region.
- source-drain breakdown voltage can be increased with regions overlapping with the sidewall insulating films 161 a to 161 d and the gate insulating films 163 a and 163 c .
- the distance between a channel and a source or a drain can be controlled by the length of the sidewall insulating films 161 a to 161 d , so that high accuracy in alignment of a mask for forming the electrodes 165 a to 165 d is not strictly required. Accordingly, variation among plural transistors can be reduced.
- the insulating film 127 may be formed over the gate electrodes 119 a and 119 c , the sidewall insulating films 161 a to 161 d , and the electrodes 165 a to 165 d.
- the transistors 160 a and 160 c illustrated in FIG. 9 can be manufactured.
- the insulating film 167 is formed, and parts of the insulating film 127 and the insulating film 167 are etched to form opening portions. Then, a pair of electrodes 169 a and 169 b in contact with the pair of electrodes 165 a and 165 b through the opening portions and a pair of electrodes 169 c and 169 d in contact with the pair of electrodes 165 c and 165 d through the opening portions are formed.
- the electrodes 169 a to 169 d can be formed in a manner similar to that of the electrodes 115 a to 115 d.
- oxygen is selectively added to an oxide semiconductor film after a dehydrogenation step, so that a transistor having small current at negative gate voltage and a transistor having high field-effect mobility and large on-state current can be manufactured over the same substrate.
- FIG. 11 is a cross-sectional view of a semiconductor device described in this embodiment.
- the semiconductor device illustrated in FIG. 11 includes a transistor 170 a having small current at negative gate voltage and a transistor 170 c having high field-effect mobility and large on-state current.
- the transistor 170 a having small current at negative gate voltage includes the insulating film 103 over the substrate 101 , an oxide semiconductor film 142 a which is provided over the insulating film 103 and to which oxygen is added, the pair of electrodes 115 a and 115 b which is in contact with the oxide semiconductor film 142 a and serves as a source electrode and a drain electrode, the gate insulating film 117 covering the oxide semiconductor film 142 a , and a gate electrode 171 a which is provided over the gate insulating film 117 and overlaps with part of the oxide semiconductor film 142 a and part of the pair of electrodes 115 a and 115 b .
- the oxide semiconductor film 142 a includes the region 143 a to which oxygen is added and the regions 145 a and 145 b to which oxygen is not added.
- the transistor 170 c having high field-effect mobility and large on-state current includes the insulating film 103 over the substrate 101 , the oxide semiconductor film 107 c which is provided over the insulating film 103 , the pair of electrodes 115 c and 115 d which is in contact with the oxide semiconductor film 107 c and serves as a source electrode and a drain electrode, the gate insulating film 117 covering the oxide semiconductor film 107 c , and a gate electrode 171 c which is provided over the gate insulating film 117 and overlaps with part of the oxide semiconductor film 107 c and part of the pair of electrodes 115 c and 115 d.
- the insulating film 127 covering the transistors 170 a and 170 c be formed.
- FIG. 11 a method for manufacturing the transistors 170 a and 170 c illustrated in FIG. 11 will be described with reference to FIGS. 2A to 2D , FIGS. 7A to 7C , and FIGS. 12A and 12B .
- the insulating film 103 is formed over the substrate 101 as illustrated in FIG. 12A .
- the oxide semiconductor films 142 a and 107 c are formed over the insulating film 103 .
- the oxide semiconductor films 142 a and 107 c are oxide semiconductor films which are subjected to heat treatment for dehydrogenation treatment.
- the electrodes 115 a to 115 d are formed.
- the gate insulating film 117 is formed.
- the oxide semiconductor film 142 a includes the region 143 a to which oxygen is added and the regions 145 a and 145 b to which oxygen is not added. In other words, the region 143 a includes fewer oxygen defects than the oxide semiconductor film 107 c and the regions 145 a and 145 b.
- the gate electrodes 171 a and 171 c are formed over the gate insulating film 117 .
- the gate electrodes 171 a and 171 c are formed in a manner similar to that of the gate electrodes 119 a and 119 c . Note that end portions of the gate electrode 171 a are formed to overlap with parts of the pair of electrodes 115 a and 115 b and end portions of the gate electrode 171 c are formed to overlap with parts of the electrodes 115 c and 115 d .
- the insulating film 127 may be formed.
- the transistors 170 a and 170 c illustrated in FIG. 11 can be manufactured.
- the insulating film 131 illustrated in FIG. 5C is formed over the insulating film 127 .
- parts of the gate insulating film 117 , the insulating film 127 , and the insulating film 131 are removed, so that opening portions are formed.
- the electrodes 133 a to 133 d in contact with the electrodes 115 a to 115 d through the opening portions may be formed.
- oxygen is added to the oxide semiconductor film 107 a after the electrodes 115 a to 115 d are formed over the oxide semiconductor films 107 a and 107 c , oxygen may be added to the oxide semiconductor film 107 a before the electrodes 115 a to 115 d are formed over the oxide semiconductor films 107 a and 107 c.
- the gate electrode overlaps with part of the pair of electrodes in the transistor of this embodiment, an off-set region is not formed in the oxide semiconductor film, and regions of the oxide semiconductor film, which are in contact with the pair of electrodes, serve as a source region and a drain region without addition of dopant. For this reason, the number of steps can be reduced.
- oxygen is selectively added to an oxide semiconductor film after a dehydrogenation step, so that a transistor having small current at negative gate voltage and a transistor having high field-effect mobility and large on-state current can be manufactured over the same substrate.
- the electrodes 115 a to 115 d are provided between the gate insulating film 117 and the oxide semiconductor films 122 a and 122 c ; in the transistors 150 a and 150 c of Embodiment 3, the electrodes 115 a to 115 d are provided between the gate insulating film 117 and the oxide semiconductor films 146 a and 146 c ; and in the transistors 170 a and 170 c of Embodiment 5, the electrodes 115 a to 115 d are provided between the gate insulating film 117 and the oxide semiconductor films 142 a and 107 c .
- the electrodes may be provided between the insulating film 103 and the oxide semiconductor films 122 a and 122 c , between the insulating film 103 and the oxide semiconductor films 146 a and 146 c , or between the insulating film 103 and the oxide semiconductor films 142 a and 107 c.
- a transistor having a structure different from the structures of the transistors in Embodiments 1 to 6 and a manufacturing method of the transistor will be described with reference to FIG. 13 and FIGS. 14A to 14D .
- an inverted staggered transistor having a bottom gate structure will be described.
- FIG. 13 is a cross-sectional view of a semiconductor device described in this embodiment.
- the semiconductor device illustrated in FIG. 13 includes a transistor 210 a having small current at negative gate voltage and a transistor 210 c having high field-effect mobility and large on-state current.
- the transistor 210 a having small current at negative gate voltage includes an insulating film 203 over a substrate 201 , a gate electrode 205 a over the insulating film 203 , a gate insulating film 207 covering the insulating film 203 and the gate electrode 205 a , an oxide semiconductor film 217 a which is provided over the gate insulating film 207 and overlaps with the gate electrode 205 a , and a pair of electrodes 219 a and 219 b in contact with the oxide semiconductor film 217 a.
- the transistor 210 c having high field-effect mobility and large on-state current includes the insulating film 203 over a substrate 201 , a gate electrode 205 c over the insulating film 203 , the gate insulating film 207 covering the insulating film 203 and the gate electrode 205 c , an oxide semiconductor film 211 c which is provided over the gate insulating film 207 and overlaps with the gate electrode 205 c , and a pair of electrodes 219 c and 219 d in contact with the oxide semiconductor film 211 c.
- An insulating film 221 covering the transistors 210 a and 210 c is preferably formed. Note that the insulating film 203 is not necessarily provided.
- the substrate 101 , the insulating film 103 , the gate electrodes 119 a and 119 c , and the gate insulating film 117 in Embodiment 1 can be used for the substrate 201 , the insulating film 203 , the gate electrodes 205 a and 205 c , and the gate insulating film 207 as appropriate.
- the oxide semiconductor film 217 a is a region to which oxygen is added and includes fewer oxygen defects than the oxide semiconductor film 217 c .
- the oxide semiconductor film 217 c is a region to which oxygen is not added.
- the electrodes 219 a to 219 d can be formed in a manner similar to that of the electrodes 115 a to 115 d in Embodiment 1, and the insulating film 221 can be formed in a manner similar to that of the insulating film 127 in Embodiment 1.
- cross-section A-B illustrates a manufacturing step of cross section A-B in FIG. 13
- cross section C-D illustrates a manufacturing step of cross-section C-D in FIG. 13 .
- the insulating film 203 is formed over the substrate 201 .
- the gate electrodes 205 a and 205 c are formed over the insulating film 203 .
- the gate insulating film 207 is formed over the gate electrodes 205 a and 205 c .
- the oxide semiconductor film 209 is formed over the gate insulating film 207 .
- the insulating film 203 can be formed in a manner similar to that of the insulating film 103 described in Embodiment 1.
- the gate electrodes 205 a and 205 c can be formed in a manner similar to that of the gate electrodes 119 a and 119 c in Embodiment 1.
- the gate insulating film 207 and the oxide semiconductor film 209 can be formed in a manner similar to that of the gate insulating film 117 in Embodiment 1 and in a manner similar to that of the oxide semiconductor film 105 in Embodiment 1, respectively.
- the oxide semiconductor film 209 is an oxide semiconductor film which is subjected to heat treatment for dehydrogenation treatment.
- the oxide semiconductor film 209 is selectively etched to form an oxide semiconductor film 211 a and the oxide semiconductor film 211 c .
- a mask 213 is formed over the oxide semiconductor film 211 c which is part of the transistor having high field-effect mobility and large on-state current, oxygen 215 is added to the oxide semiconductor film 211 a . Consequently, the oxide semiconductor film 217 a in which oxygen defects are reduced as compared to those in the oxide semiconductor film 211 c is formed (see FIG. 14C ).
- the mask 213 is removed. Addition of the oxygen 215 is performed similarly to the addition of the oxygen 111 in Embodiment 1.
- the electrodes 219 a to 219 d are formed over the gate insulating film 207 and the oxide semiconductor films 217 a and 211 c .
- the insulating film 221 is formed over the gate insulating film 207 , the oxide semiconductor films 217 a and 211 c , and the electrodes 219 a to 219 d .
- the electrodes 219 a to 219 d are formed in a manner similar to that of the electrodes 115 a to 115 d in Embodiment 1.
- the insulating film 221 is formed in a manner similar to that of the insulating film 127 in Embodiment 1.
- the transistors 210 a and 210 c illustrated in FIG. 13 can be manufactured.
- the pair of electrodes 219 a and 219 b is provided between the insulating film 221 and the oxide semiconductor film 217 a and the pair of electrodes 219 c and 219 d is provided between the insulating film 221 and the oxide semiconductor film 211 c .
- the pair of electrodes 219 a and 219 b may be provided between the gate insulating film 207 and the oxide semiconductor film 217 a and the pair of electrodes 219 c and 219 d may be provided between the gate insulating film 207 and the oxide semiconductor film 211 c.
- oxygen is selectively added to an oxide semiconductor film after a dehydrogenation step, so that a transistor having small current at negative gate voltage and a transistor having high field-effect mobility and large on-state current can be manufactured over the same substrate.
- a transistor having a structure different from the structures of the transistors in Embodiments 1 to 7 and a method for manufacturing the transistor will be described with reference to FIG. 15 , FIGS. 16A to 16D , and FIGS. 17A to 17C .
- a semiconductor device including a coplanar transistor having a top gate structure and a staggered transistor having a dual gate structure is described.
- FIG. 15 is a cross-sectional view of a semiconductor device described in this embodiment.
- the semiconductor device illustrated in FIG. 15 includes a transistor 310 a having small current at negative gate voltage and a transistor 310 c having high field-effect mobility and large on-state current.
- the transistor 310 a having small current at negative gate voltage has a single gate structure and is a coplanar transistor having a top gate structure. Note that any of the transistors 120 a , 130 a , 150 a , 160 a , 170 a , and 210 a having small current at negative gate voltage in Embodiments 1 to 7 can be used as the transistor 310 a as appropriate. Here, a transistor having a structure similar to that of the transistor 120 a in Embodiment 1 is described.
- the transistor 310 a having small current at negative gate voltage includes an insulating film 303 and an insulating film 307 over a substrate 301 , an oxide semiconductor film 326 a over the insulating film 307 , a pair of electrodes 317 a and 317 b which is in contact with the oxide semiconductor film 326 a and serves as a source electrode and a drain electrode, an insulating film 319 covering the oxide semiconductor film 326 a , and a gate electrode 321 a which is provided over the insulating film 319 and overlaps with the oxide semiconductor film 326 a .
- the oxide semiconductor film 326 a includes a first region 327 a overlapping with the gate electrode 321 a and a pair of second regions 329 a and 329 b between which the first region 327 a is sandwiched and which contains dopant.
- the insulating film 319 serves as a gate insulating film.
- the first region 327 a serves as a channel region
- regions of the pair of second regions 329 a and 329 b containing dopant, which are in contact with the pair of electrodes 317 a and 317 b serve as a source region and a drain region. With regions which are not in contact with the pair of electrodes 317 a and 317 b in the pair of second regions 329 a and 329 b , source-drain breakdown voltage can be increased.
- the transistor 310 c having high field-effect mobility and large on-state current has a dual gate structure.
- any of the transistors 120 c , 130 c , 150 c , 160 c , 170 c , and 210 c having high field-effect mobility and large on-state current in Embodiments 1 to 7 can be made to have a dual gate structure as appropriate.
- the structure of the transistor 210 a in Embodiment 7 is changed.
- the transistor 310 c having high field-effect mobility and large on-state current includes the insulating film 303 over the substrate 301 , a first gate electrode 305 c over the insulating film 303 , the insulating film 307 covering the insulating film 303 and the first gate electrode 305 c , an oxide semiconductor film 309 c which is provided over the insulating film 307 and overlaps with the first gate electrode 305 c , a pair of electrodes 317 c and 317 d in contact with the oxide semiconductor film 309 c , the insulating film 319 covering the oxide semiconductor film 309 c and the pair of electrodes 317 c and 317 d , and a second gate electrode 321 c over the insulating film 319 .
- the insulating film 307 serves as a first gate insulating film and the insulating film 319 serves as a second gate insulating film.
- an insulating film 331 covering the transistors 310 a and 310 c be formed. Note that the insulating film 303 is not necessarily provided.
- the substrate 301 , the insulating film 303 , the first gate electrode 305 c , and the insulating film 307 can be formed in manners similar to those of the substrate 101 , the insulating film 103 , the gate electrode 119 c , and the gate insulating film 117 in Embodiment 1.
- the oxide semiconductor film 326 a is a region to which oxygen is added.
- the oxide semiconductor film 309 c is a region to which oxygen is not added. Dopant is added to the pair of second regions 329 a and 329 b in the oxide semiconductor film 326 a in a manner similar to that of the pair of second regions 125 a and 125 b in Embodiment 1.
- the electrodes 317 a to 317 d , the insulating film 319 , the gate electrode 321 a , the second gate electrode 321 c , and the insulating film 331 can be formed in manners similar to those of the electrodes 115 a to 115 d , the gate insulating film 117 , the gate electrodes 119 a and 119 c , and the insulating film 127 in Embodiment 1.
- Oxygen is added to the oxide semiconductor film 326 a of the transistor 310 a having small current at negative gate voltage, and the oxide semiconductor film 326 a includes few oxygen defects. Therefore, the threshold voltage of the transistor 310 a shifts in the positive direction and thus a normally-off transistor is obtained.
- the threshold voltage can be controlled by applying different voltages to the first gate electrode 305 c and the second gate electrode 321 c . In other words, the threshold voltage of a normally-off transistor whose threshold voltage shifts in the positive direction, and the threshold voltage of a normally-on transistor whose threshold voltage shifts in the negative direction can be set as appropriate in accordance with circuits of a semiconductor device.
- cross-section A-B illustrates a manufacturing step of cross section A-B in FIG. 15
- cross section C-D illustrates a manufacturing step of cross-section C-D in FIG. 15 .
- the insulating film 303 is formed over the substrate 301 . Then, the first gate electrode 305 c is formed over the insulating film 303 .
- the insulating film 303 can be formed in a manner similar to that of the insulating film 103 described in Embodiment 1.
- the first gate electrode 305 c can be formed in a manner similar to that of the gate electrode 119 c described in Embodiment 1.
- the insulating film 307 is formed over the first gate electrode 305 c . Then, an oxide semiconductor film 309 a and the oxide semiconductor film 309 c which are isolated from each other are formed over the insulating film 307 .
- the insulating film 307 and the oxide semiconductor films 309 a and 309 c can be formed in manners similar to those of the gate insulating film 117 and the oxide semiconductor films 107 a and 107 c in Embodiment 1.
- oxygen 313 is added to the oxide semiconductor film 309 a . Consequently, an oxide semiconductor film 315 a in which oxygen defects are reduced as compared to those in the oxide semiconductor film 309 c is formed (see FIG. 16C ). After that, the mask 311 is removed. Addition of the oxygen 313 is performed similarly to the addition of the oxygen 111 in Embodiment 1.
- the electrodes 317 a to 317 d are formed over the insulating film 307 and the oxide semiconductor films 315 a and 309 c .
- the insulating film 319 is formed over the insulating film 307 , the oxide semiconductor films 315 a and 309 c , and the electrodes 317 a to 317 d .
- the electrodes 317 a to 317 d are formed in a manner similar to that of the electrodes 115 a to 115 d in Embodiment 1.
- the insulating film 319 is formed in a manner similar to that of the gate insulating film 117 in Embodiment 1.
- the gate electrode 321 a overlapping with the oxide semiconductor film 315 a and the second gate electrode 321 c overlapping with the oxide semiconductor film 309 c are formed over the insulating film 319 .
- the gate electrode 321 a and the second gate electrode 321 c can be formed in a manner similar to that of the gate electrodes 119 a and 119 c in Embodiment 1.
- a mask 323 is formed over the oxide semiconductor film 309 c which is part of the transistor having high field-effect mobility and large on-state current, and then dopant 325 is added to the oxide semiconductor film 315 a with the use of the gate electrode 321 a as a mask.
- the pair of second regions 329 a and 329 b containing dopant is formed in cross-section A-B.
- the oxide semiconductor film 326 a includes the first region 327 a and the pair of second regions 329 a and 329 b containing dopant.
- heat treatment may be performed.
- the insulating film 331 is formed over the insulating film 319 , the gate electrode 321 a , and the second gate electrode 321 c . After that, heat treatment is preferably performed.
- the transistors 310 a and 310 c illustrated in FIG. 15 can be manufactured.
- oxygen is selectively added to an oxide semiconductor film after a dehydrogenation step, so that a transistor having small current at negative gate voltage and a transistor having high field-effect mobility and large on-state current can be manufactured over the same substrate.
- a memory device will be described as an example of the semiconductor devices in the above embodiments.
- FIG. 19 illustrates a block diagram of a specific structure of a memory device as an example. Note that in the block diagram in FIG. 19 , circuits in the memory device are classified in accordance with their functions and separated blocks are illustrated. However, it is difficult to classify actual circuits according to their functions completely and it is possible for one circuit to have a plurality of functions.
- a memory device 901 in FIG. 19 includes a memory cell array 903 and a driver circuit 905 .
- the driver circuit 905 includes an input/output buffer 907 ; a word line driver circuit 909 configured to control the potential of a word line; a data line driver circuit 911 configured to control writing and reading of data to/from a memory cell; and a control circuit 913 configured to control operations of the input/output buffer 907 , the word line driver circuit 909 , and the data line driver circuit 911 .
- the word line driver circuit 909 includes a row decoder 915 . In addition to the row decoder 915 , the word line driver circuit 909 includes a level shifter and a buffer.
- the data line driver circuit 911 includes a column decoder 917 and a reading circuit 919 .
- the data line driver circuit 911 includes a selector and a level shifter in addition to the column decoder 917 and the reading circuit 919 .
- the memory cell array 903 , the input/output buffer 907 , the word line driver circuit 909 , the data line driver circuit 911 , and the control circuit 913 may be formed using one substrate; any one of them may be formed using a substrate different from a substrate for the others; or all of them may be formed using different substrates.
- part of the driver circuit 905 may be connected to an FPC by a COF (chip on film) method. Further, electrical connection can be ensured by COG (chip on glass) method.
- COF chip on film
- the control circuit 913 When a signal AD including an address Ax and an address Ay of the memory cell array 903 as data is input to the memory device 901 , the control circuit 913 transmits the address Ax in the column direction and the address Ay in the row direction to the data line driver circuit 911 and the word line driver circuit 909 , respectively. Further, the control circuit 913 transmits a signal DATA including data input to the memory device 901 through the input/output buffer 907 , to the data line driver circuit 911 .
- Operation of writing data and operation of reading data in the memory cell array 903 is selected in accordance with a signal RE (read enable), a signal WE (write enable), or the like supplied to the control circuit 913 . Further, in the case where the plurality of memory cell arrays 903 is provided, a signal CE (chip enable) for selecting the memory cell array 903 may be input to the control circuit 913 . In that case, operation selected in accordance with the signal RE or the signal WE is performed in the memory cell array 903 selected in accordance with the signal CE.
- RE read enable
- WE write enable
- CE chip enable
- a signal for selecting a memory cell corresponding to the address Ay is generated in the row decoder 915 included in the word line driver circuit 909 in response to an instruction from the control circuit 913 .
- the amplitude of the signal is adjusted by the level shifter, and then the processed signal is input to the memory cell array 903 through the buffer.
- a signal for selecting a memory cell corresponding to the address Ax among the memory cells selected in the column decoder 917 is generated in response to an instruction from the control circuit 913 .
- the amplitude of the signal is adjusted by the level shifter, and then the processed signal is input to the selector.
- the selector the signal DATA is sampled in accordance with the input signal, and the sampled signal is input to a memory cell corresponding to the address Ax and the address Ay.
- a signal for selecting a memory cell corresponding to the address Ay is generated in the row decoder 915 included in the word line driver circuit 909 in response to an instruction from the control circuit 913 .
- the amplitude of the signal is adjusted by the level shifter, and then the processed signal is input to the memory cell array 903 through the buffer.
- a memory cell corresponding to the address Ax is selected among the memory cells selected in the row decoder 915 in response to an instruction from the control circuit 913 . Then, data stored in the memory cell corresponding to the addresses Ax and Ay is read, and a signal containing the data is generated.
- the data line driver circuit 911 may include a page buffer which can temporarily store the signal DATA, a precharge circuit which supplies a potential VR in advance to a data line in reading of data, or the like.
- the column decoder 917 As an example, the column decoder 917 of a 256-bit memory device including four bit lines and four word lines is described. Note that the number of bit lines and the number of word lines can be determined as appropriate in accordance with the number of bits.
- address signals are input to NAND circuits 931 a and 931 b from address lines S 1 , S 1 B, S 2 , S 2 B, S 3 , S 3 B, S 4 , and S 4 B.
- inversion signals of the signals input to S 1 , S 2 , S 3 , and S 4 are input to S 1 B, S 2 B, S 3 B, and S 4 B, respectively.
- Signals are output from the NAND circuits 931 a and 931 b to output terminals out 1 to out 16 (not illustrated) through NOR circuits 933 .
- a signal for selecting a memory cell corresponding to the address Ax among the selected memory cells in the column decoder 917 is generated.
- the amplitude of the signal is adjusted by a level shifter, and then the processed signal is input to a selector.
- the selector the signal DATA is sampled in accordance with the input signal, and the sampled signal is input to a memory cell corresponding to the address Ax and the address Ay.
- the row decoder 915 can have a circuit configuration similar to the column decoder 917 and a signal for selecting a memory cell corresponding to the address Ay is generated in the row decoder 915 .
- the amplitude of the signal is adjusted by a level shifter, and then the processed signal is input to the memory cell array 903 through a buffer.
- the driver circuit 905 , the row decoder 915 , and the column decoder 917 illustrated in FIG. 19 need to operate at high speed for writing signals to a bit line and a word line of the memory cell array 903 . Therefore, high-speed operation of the memory device is possible with the use of a transistor having high field-effect mobility and large on-state current, such as the transistors 120 c , 130 c , 150 c , 160 c , 170 c , 210 c , and 310 c in the above embodiments, in the driver circuit 905 , the row decoder 915 , and the column decoder 917 .
- FIG. 21 illustrates a memory cell array in a memory device whose structure corresponds to that of a so-called dynamic random access memory (DRAM).
- the memory cell array 903 in FIG. 21 includes m (m ⁇ 2) bit lines BL and n (n ⁇ 2) word lines WL. Further, m ⁇ n memory cells 921 are arranged in matrix.
- Each of the memory cells 921 includes a transistor 923 and a capacitor 925 .
- a gate electrode of the transistor 923 is connected to the word line WL. Further, one of a source electrode and a drain electrode of the transistor 923 is connected to the bit line BL. The other of the source electrode and the drain electrode of the transistor 923 is connected to one electrode of the capacitor 925 . The other electrode of the capacitor 925 is connected to a capacitor line and is supplied with a predetermined potential.
- any of the transistors 120 a , 130 a , 150 a , 160 a , 170 a , 210 a , and 310 a having small current at negative gate voltage in the above embodiments is used as the transistor 923 included in the memory cell 921 as appropriate, whereby data written to the capacitor 925 can be held for a long time and the memory device can be used as a substantially non-volatile memory device.
- a memory element formed using any of the transistors 120 a , 130 a , 150 a , 160 a , 170 a , 210 a , and 310 a having small current at negative gate voltage in the above embodiments can be used for a static random access memory (SRAM) and another memory device.
- SRAM static random access memory
- the transistor provided in the pixel portion has preferably small leakage current so that a potential of a pixel electrode included in the pixel is kept. Therefore, any of the transistors 120 a , 130 a , 150 a , 160 a , 170 a , 210 a , and 310 a having small current at negative gate voltage in the above embodiments is used as the transistor provided in the pixel portion as appropriate.
- the part of the driver circuit which can be formed using an n-channel TFT is formed using any of the transistors 120 c , 130 c , 150 c , 160 c , 170 c , 210 c , and 310 c having high field-effect mobility and large on-state current in the above embodiments as appropriate and is formed over the same substrate as the transistor in the pixel portion.
- the transistors described in the above embodiments are used for the pixel portion and the driver circuit as described above, whereby a highly reliable display device which can operate at high speed and consumes a small amount of power can be provided.
- FIG. 22 illustrates an example of an active matrix display device.
- a pixel portion 601 , a first scan line driver circuit 602 , a second scan line driver circuit 603 , and a signal line driver circuit 604 are provided over a substrate 600 in the display device.
- a plurality of signal lines extended from the signal line driver circuit 604 is arranged and a plurality of scan lines extended from the first scan line driver circuit 602 and the second scan line driver circuit 603 is arranged.
- pixels which include display elements are provided in matrix in respective regions where the scan lines and the signal lines intersect with each other.
- the substrate 600 of the display device is connected to a timing control circuit (also referred to as controller or control IC) through a connection portion such as a flexible printed circuit (FPC).
- a timing control circuit also referred to as controller or control IC
- FPC flexible printed circuit
- the first scan line driver circuit 602 , the second scan line driver circuit 603 , and the signal line driver circuit 604 are formed over the substrate 600 where the pixel portion 601 is formed. Accordingly, the number of components of a driver circuit which is provided outside and the like is reduced, so that cost reduction can be achieved. Further, if the driver circuit is provided outside the substrate 600 , wirings would need to be extended and the number of connections of wirings would be increased, but by providing the driver circuit over the substrate 600 , the number of connections of the wirings can be reduced. Accordingly, the reliability or yield can be improved.
- a semiconductor device disclosed in this specification can be applied to a variety of electronic devices (including game machines).
- electronic devices are a television set (also referred to as a television or a television receiver), a monitor of a computer or the like, a camera such as a digital camera or a digital video camera, a digital photo frame, a mobile phone (also referred to as a cellular phone or a cellular phone device), a portable game machine, a portable information terminal, an audio reproducing device, a large-sized game machine such as a pachinko machine, and the like.
- a television set also referred to as a television or a television receiver
- a monitor of a computer or the like a camera such as a digital camera or a digital video camera, a digital photo frame
- a mobile phone also referred to as a cellular phone or a cellular phone device
- a portable game machine also referred to as a cellular phone or a cellular phone device
- portable information terminal such as a pachinko machine
- FIG. 23 illustrates a portable information terminal including a main body 1001 , a housing 1002 , display portions 1003 a and 1003 b , and the like.
- the display portion 1003 b is a touch panel. By touching a keyboard button 1004 displayed on the display portion 1003 b , a screen can be operated, and text can be input. It is needless to say that the display portion 1003 a may be a touch panel.
- a liquid crystal panel or an organic light-emitting panel is manufactured by using the transistor described in any of the above embodiments as a switching element and applied to the display portion 1003 a or 1003 b , whereby the reliability of the display portion of the portable information terminal can be improved.
- the portable information terminal in FIG. 23 can have a function of displaying a variety of information (e.g., a still image, a moving image, and a text image) on the display portion, a function of displaying a calendar, a date, the time, or the like on the display portion, a function of operating or editing information displayed on the display portion, a function of controlling processing by various kinds of software (programs), and the like.
- an external connection terminal an earphone terminal, a USB terminal, or the like
- a recording medium insertion portion, and the like may be provided on the back surface or the side surface of the housing.
- the portable information terminal illustrated in FIG. 23 may transmit and receive data wirelessly. Through wireless communication, desired book data or the like can be purchased and downloaded from an electronic book server.
- transistor 1 electric characteristics of a transistor including an oxide semiconductor film to which oxygen is added
- transistor 2 a transistor including an oxide semiconductor film to which oxygen is not added
- the insulating film 103 was formed over the substrate 101 as illustrated in FIG. 2A .
- a silicon wafer was used as the substrate 101 .
- the substrate 101 was heated at 950° C. in an oxygen atmosphere including hydrogen chloride, so that a 100-nm-thick silicon oxide film including chlorine was formed on the substrate 101 . Then, the silicon oxide film including chlorine on one surface of the substrate 101 was removed. Next, the opposite surface of the substrate 101 , i.e., a surface of the silicon oxide film including chlorine, was subjected to reverse sputtering treatment, and a silicon oxide film having a thickness of 330 nm was formed over the silicon oxide film including chlorine by a sputtering method.
- a silicon oxide target was used; oxygen was introduced as a sputtering gas at 50 sccm into a chamber having a pressure of 0.4 Pa; the substrate temperature was 100° C.; the distance between the substrate and the target was 60 mm; and the supplied electric power was 1.5 kW.
- the insulating film 103 was formed over the substrate 101 .
- planarization treatment was performed on a surface of the insulating film 103 .
- the surface of the insulating film 103 was polished by 30 nm by CMP treatment.
- an In—Sn—Zn-based oxide film having a thickness of 15 nm was formed by a sputtering method. Then, oxygen was diffused from the insulating film 103 to the In—Sn—Zn-based oxide film by heat treatment. Thus, the oxide semiconductor film 105 in which oxygen defects were reduced was formed. However, oxygen defects still remain in the oxide semiconductor film 105 even after the heat treatment.
- the heat treatment was performed in a nitrogen atmosphere in a chamber at 250° C. and then in an oxygen atmosphere.
- a mask was formed over the oxide semiconductor film 105 in a photolithography step and then the oxide semiconductor film 105 was selectively etched; thus, as illustrated in FIG. 2B , the oxide semiconductor films 107 a and 107 c were formed.
- an ICP etching apparatus was used for the etching. As for etching conditions, a power of 450 W was supplied to an ICP electrode; a power of 100 W was supplied to a bias electrode; the chamber pressure was 1.9 Pa; and boron trichloride at a flow rate of 60 sccm and chlorine at a flow rate of 20 sccm were used as etching gases.
- the pair of electrodes 115 a and 115 b was formed over the oxide semiconductor film 107 a and the pair of electrodes 115 c and 115 d was formed over the oxide semiconductor film 107 c .
- the electrodes 115 a to 115 d were formed in such a manner that a tungsten film having a thickness of 100 nm was formed over the oxide semiconductor films 107 a and 107 c by a sputtering method, a mask was formed over the tungsten film in a photolithography step, and then the tungsten film was selectively etched. After that, the mask was removed.
- sputtering conditions for forming the tungsten film a tungsten target was used; heated argon was introduced as a sputtering gas at a flow rate of 80 sccm into a chamber having a pressure of 0.8 Pa; the substrate temperature was 230° C.; and the supplied electric power was 1 kW.
- etching conditions for etching the tungsten film a power of 500 W was supplied to an ICP electrode; a power of 150 W was supplied to a bias electrode; a chamber pressure was 1.0 Pa; and carbon tetrachloride at a flow rate of 25 sccm, chlorine at a flow rate of 25 sccm, and oxygen at a flow rate of 10 sccm were used as etching gases.
- the gate insulating film 117 was formed over the oxide semiconductor films 107 a and 107 c and the electrodes 115 a to 115 d .
- a silicon oxynitride film having a thickness of 100 nm was formed by a CVD method.
- silane at a flow rate of 1 sccm and dinitrogen monoxide at a flow rate of 800 sccm were introduced as source gases into a chamber having a pressure of 40 Pa; the power of 60 MHz high-frequency power supply was 150 W; the substrate temperature was 400° C.; and the distance between electrodes was 28 mm.
- the mask 109 was formed in a photolithography step, and then oxygen is added to the oxide semiconductor film 107 a included in the transistor 1 .
- an ion implantation apparatus was used, and the electron energy was set to 25 kV and the dose of oxygen was set to 1 ⁇ 10 15 cm ⁇ 2 .
- oxygen was not added to the oxide semiconductor film 107 c included in the transistor 2 .
- the region 143 a to which oxygen was added and the pair of regions 145 a and 145 b which overlapped with the pair of electrodes 115 a and 115 b and to which oxygen was not added were formed in the oxide semiconductor film 142 a in the transistor 1 .
- the gate electrodes 171 a and 171 c were formed over the gate insulating film 117 , and then the insulating film 127 was formed.
- the gate electrodes 171 a and 171 c were formed in such a manner that a tantalum nitride film having a thickness of 30 nm and a tungsten film having a thickness of 135 nm were stacked over the gate insulating film 117 by a sputtering method, a mask was formed over the tungsten film in a photolithography step, and then the tantalum nitride film and the tungsten film were selectively etched.
- sputtering conditions for forming the tantalum nitride film a tantalum nitride target was used; argon at a flow rate of 50 sccm and nitrogen at a flow rate of 10 sccm were introduced as sputtering gases into a chamber having a pressure of 0.6 Pa; and the supplied electric power was 1 kW.
- sputtering conditions for forming the tungsten film a tungsten target was used; heated argon at a flow rate of 100 sccm was introduced as a sputtering gas into a chamber having a pressure of 2 Pa; the substrate temperature was 230° C.; and the supplied electric power was 4 kW.
- etching conditions of the tungsten film a power of 3000 W was supplied to an ICP electrode; a power of 110 W was supplied to a bias electrode; the chamber pressure was 0.67 Pa; and chlorine at a flow rate of 45 sccm, tetrafluoromethane at a flow rate of 55 sccm, and oxygen at a flow rate of 55 sccm were used as etching gases.
- etching of the tantalum nitride film first etching was performed under the conditions that a power of 2000 W was supplied to an ICP electrode; a power of 50 W was supplied to a bias electrode; the chamber pressure was 1 Pa; and chlorine at a flow rate of 100 sccm was used as an etching gas, and then second etching was performed under the conditions that a power of 1000 W was supplied to the ICP electrode; a power of 25 W was supplied to the bias electrode; and the chamber pressure was changed to 2 Pa.
- the insulating film 127 As the insulating film 127 , a stack of an aluminum oxide film having a thickness of 50 nm and a silicon oxynitride film having a thickness of 300 nm was formed.
- sputtering conditions for forming the aluminum oxide film an aluminum oxide target was used; argon at a flow rate of 25 sccm and oxygen at a flow rate of 25 sccm were introduced as sputtering gases into a chamber having a pressure of 0.4 Pa; the distance between the target and the substrate was 60 mm; the substrate temperature was 250° C.; and the supplied electric power was 2.5 kW.
- silane at a flow rate of 5 sccm and dinitrogen monoxide at a flow rate of 1000 sccm were introduced as source gases into a chamber having a pressure of 133 Pa; the power of a 13.56 MHz high-frequency power supply was 35 W; the substrate temperature was 325° C.; and the distance between electrodes was 20 mm.
- a mask was formed over the insulating film 127 in a photolithography step, and the gate insulating film 117 and the insulating film 127 were selectively etched; thus, openings were formed. Then, a pair of electrodes was formed in the opening portions.
- etching conditions of the gate insulating film 117 and the insulating film 127 a power of 475 W was supplied to an ICP electrode; a power of 300 W was supplied to a bias electrode; the chamber pressure was 3.5 Pa; and trifluoromethane at a flow rate of 22.5 sccm, helium at a flow rate of 127.5 sccm, and methane at a flow rate of 5 sccm were used as etching gases.
- the pair of electrodes was formed in such a manner that a titanium film having a thickness of 50 nm, an aluminum film having a thickness of 100 nm, and a titanium film having a thickness of 50 nm were stacked in this order, a mask was formed in a photolithography step, and the films were selectively etched with the use of the mask.
- sputtering conditions for forming the titanium films a titanium target was used; argon at a flow rate of 20 sccm was introduced as a sputtering gas into a chamber having a pressure of 0.1 Pa; the substrate temperature was room temperature; and the supplied electric power was 12 kW.
- sputtering conditions for forming the aluminum film an aluminum target was used; argon at a flow rate of 50 sccm was introduced as a sputtering gas into a chamber having a pressure of 0.4 Pa; the substrate temperature was room temperature; and the supplied electric power was 1 kW.
- etching conditions of the titanium film, the aluminum film, and the titanium film a power of 450 W was supplied to an ICP electrode; a power of 100 W was supplied to a bias electrode; the chamber pressure was 1.9 Pa; and boron trichloride at a flow rate of 60 sccm and chlorine at a flow rate of 20 sccm were used as etching gases.
- the transistor 1 and the transistor 2 were fabricated.
- FIG. 18A shows electric characteristics of the transistor 1 and FIG. 18B shows electric characteristics of the transistor 2 .
- the left vertical axis indicates drain current
- the right vertical axis indicates field-effect mobility
- the horizontal axis indicates gate voltage.
- the gap between the pair of facing electrodes 115 a and 115 b and the gap between the pair of facing electrodes 115 c and 115 d (i.e., the distance between a pair of electrodes in the channel length direction) were each 9.9 ⁇ m
- the width of the facing portions of the pair of electrodes 115 a and 115 b and the width of the facing portions of the pair of electrodes 115 c and 115 d (i.e., the length of facing portions of a pair of electrodes in the channel width direction) were each 10.3 ⁇ m.
- the field-effect mobility was calculated on the assumption that the thickness of the gate insulating film 117 was 100 nm and the average permittivity was 4.1.
- Table 1 shows on-state current (Ion — 0.1) at a drain voltage (Vd) of 0.1 V and a gate voltage (Vg) of 3 V; on-state current (Ion — 3) at a drain voltage (Vd) of 3 V and a gate voltage (Vg) of 3 V; current (Ioff — 0.1) at a drain voltage (Vd) of 0.1 V and a gate voltage (Vg) of ⁇ 3 V; current (Ioff — 3) at a drain voltage (Vd) of 3 V and a gate voltage (Vg) of ⁇ 3 V; the threshold voltage (Vth); field-effect mobility ( ⁇ FE_lin) at a drain voltage (Vd) of 0.1 V; and field-effect mobility ( ⁇ FE_sat) at a drain voltage (Vd) of 3 V.
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US20140175423A1 (en) * | 2012-12-21 | 2014-06-26 | Samsung Display Co., Ltd. | Thin film transistor array panel and method of manufacturing the same |
US9117916B2 (en) | 2011-10-13 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film |
US9166019B2 (en) | 2011-10-13 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US9281237B2 (en) | 2011-10-13 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Transistor having reduced channel length |
US9431545B2 (en) | 2011-09-23 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9666698B2 (en) | 2015-03-24 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20170358610A1 (en) * | 2016-06-14 | 2017-12-14 | Japan Display Inc. | Semiconductor device and display device |
US10043917B2 (en) * | 2016-03-03 | 2018-08-07 | United Microelectronics Corp. | Oxide semiconductor device and method of manufacturing the same |
US10115830B2 (en) | 2014-07-29 | 2018-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
US10249768B2 (en) | 2014-02-07 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10367013B2 (en) | 2014-02-07 | 2019-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10818795B2 (en) | 2013-12-27 | 2020-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10991725B2 (en) * | 2017-03-09 | 2021-04-27 | Sharp Kabushiki Kaisha | Active matrix substrate and method for producing same |
US11309429B2 (en) | 2017-09-01 | 2022-04-19 | Samsung Display Co., Ltd. | Thin film transistor and display device including the same |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8541781B2 (en) * | 2011-03-10 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8859330B2 (en) * | 2011-03-23 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
EP2738815B1 (en) | 2012-11-30 | 2016-02-10 | Samsung Electronics Co., Ltd | Semiconductor materials, transistors including the same, and electronic devices including transistors |
CN103199113B (zh) * | 2013-03-20 | 2018-12-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
JP6401483B2 (ja) * | 2013-04-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP6410496B2 (ja) * | 2013-07-31 | 2018-10-24 | 株式会社半導体エネルギー研究所 | マルチゲート構造のトランジスタ |
US9859016B2 (en) * | 2013-11-25 | 2018-01-02 | Sharp Kabushiki Kaisha | Semiconductor device and method for writing thereto |
WO2015107410A1 (de) * | 2014-01-14 | 2015-07-23 | Jan Franck | Vorrichtung mit einem behälter zum speichern einer flüssigkeit |
DE112015001878B4 (de) * | 2014-04-18 | 2021-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronisches Gerät |
US20170184893A1 (en) * | 2014-07-11 | 2017-06-29 | Sharp Kabushiki Kaisha | Semiconductor apparatus, method of manufacturing same, and liquid crystal display apparatus |
KR101562932B1 (ko) | 2014-11-28 | 2015-10-26 | 연세대학교 산학협력단 | 산화물 반도체 소자 및 이의 제조 방법 |
JP6736351B2 (ja) * | 2015-06-19 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
DE112016002769T5 (de) * | 2015-06-19 | 2018-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren dafür und elektronisches Gerät |
US10014325B2 (en) * | 2016-03-10 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
CN105957872A (zh) | 2016-07-18 | 2016-09-21 | 京东方科技集团股份有限公司 | 阵列基板的制作方法、阵列基板及显示装置 |
KR102550604B1 (ko) | 2016-08-03 | 2023-07-05 | 삼성디스플레이 주식회사 | 반도체장치 및 그 제조방법 |
KR102237576B1 (ko) * | 2018-03-28 | 2021-04-07 | 한양대학교 산학협력단 | 그래핀 산화물을 포함하는 희생막과 물의 반응을 이용한 전자 소자, 및 그 제조 방법. |
KR102237569B1 (ko) * | 2018-03-28 | 2021-04-07 | 한양대학교 산학협력단 | 그래핀 산화물과 망간 산화물을 포함하는 희생막을 포함하는 전자 소자, 및 그 제조 방법. |
TWI651765B (zh) * | 2018-03-29 | 2019-02-21 | 友達光電股份有限公司 | 結晶金屬氧化物層的製造方法、主動元件基板的製造方法及主動元件基板 |
Citations (113)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528032A (en) | 1993-03-23 | 1996-06-18 | Esco Ltd | Thermal desorption gas spectrometer |
US5731856A (en) | 1995-12-30 | 1998-03-24 | Samsung Electronics Co., Ltd. | Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure |
US5744864A (en) | 1995-08-03 | 1998-04-28 | U.S. Philips Corporation | Semiconductor device having a transparent switching element |
JP2000044236A (ja) | 1998-07-24 | 2000-02-15 | Hoya Corp | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150900A (ja) | 1998-11-17 | 2000-05-30 | Japan Science & Technology Corp | トランジスタ及び半導体装置 |
US6294274B1 (en) | 1998-11-16 | 2001-09-25 | Tdk Corporation | Oxide thin film |
US20010046027A1 (en) | 1999-09-03 | 2001-11-29 | Ya-Hsiang Tai | Liquid crystal display having stripe-shaped common electrodes formed above plate-shaped pixel electrodes |
JP2002076356A (ja) | 2000-09-01 | 2002-03-15 | Japan Science & Technology Corp | 半導体デバイス |
US20020056838A1 (en) | 2000-11-15 | 2002-05-16 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor array, method of producing the same, and display panel using the same |
US20020132454A1 (en) | 2001-03-19 | 2002-09-19 | Fuji Xerox Co., Ltd. | Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP2003086000A (ja) | 2001-09-10 | 2003-03-20 | Sharp Corp | 半導体記憶装置およびその試験方法 |
JP2003086808A (ja) | 2001-09-10 | 2003-03-20 | Masashi Kawasaki | 薄膜トランジスタおよびマトリクス表示装置 |
US20030189401A1 (en) | 2002-03-26 | 2003-10-09 | International Manufacturing And Engineering Services Co., Ltd. | Organic electroluminescent device |
US20030201450A1 (en) * | 1998-05-15 | 2003-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20030218222A1 (en) | 2002-05-21 | 2003-11-27 | The State Of Oregon Acting And Through The Oregon State Board Of Higher Education On Behalf Of | Transistor structures and methods for making the same |
US20040038446A1 (en) | 2002-03-15 | 2004-02-26 | Sanyo Electric Co., Ltd.- | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP2004103957A (ja) | 2002-09-11 | 2004-04-02 | Japan Science & Technology Corp | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
US20040127038A1 (en) | 2002-10-11 | 2004-07-01 | Carcia Peter Francis | Transparent oxide semiconductor thin film transistors |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP2004273614A (ja) | 2003-03-06 | 2004-09-30 | Sharp Corp | 半導体装置およびその製造方法 |
WO2004114391A1 (ja) | 2003-06-20 | 2004-12-29 | Sharp Kabushiki Kaisha | 半導体装置およびその製造方法ならびに電子デバイス |
US20050017302A1 (en) * | 2003-07-25 | 2005-01-27 | Randy Hoffman | Transistor including a deposited channel region having a doped portion |
US20050040393A1 (en) * | 2003-08-22 | 2005-02-24 | Hong Sungkwon C. | Imaging with gate controlled charge storage |
US20050199959A1 (en) | 2004-03-12 | 2005-09-15 | Chiang Hai Q. | Semiconductor device |
US20060043377A1 (en) | 2004-03-12 | 2006-03-02 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US20060091793A1 (en) | 2004-11-02 | 2006-05-04 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US20060108636A1 (en) | 2004-11-10 | 2006-05-25 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US20060108529A1 (en) | 2004-11-10 | 2006-05-25 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US20060110867A1 (en) | 2004-11-10 | 2006-05-25 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US20060113539A1 (en) | 2004-11-10 | 2006-06-01 | Canon Kabushiki Kaisha | Field effect transistor |
US20060113549A1 (en) | 2004-11-10 | 2006-06-01 | Canon Kabushiki Kaisha | Light-emitting device |
US20060113536A1 (en) | 2004-11-10 | 2006-06-01 | Canon Kabushiki Kaisha | Display |
US20060113565A1 (en) | 2004-11-10 | 2006-06-01 | Canon Kabushiki Kaisha | Electric elements and circuits utilizing amorphous oxides |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
US20060170111A1 (en) | 2005-01-28 | 2006-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US20060169973A1 (en) | 2005-01-28 | 2006-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US20060208977A1 (en) | 2005-03-18 | 2006-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US20060228974A1 (en) | 2005-03-31 | 2006-10-12 | Theiss Steven D | Methods of making displays |
US20060231882A1 (en) | 2005-03-28 | 2006-10-19 | Il-Doo Kim | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US20060238135A1 (en) | 2005-04-20 | 2006-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US20060284171A1 (en) | 2005-06-16 | 2006-12-21 | Levy David H | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US20060284172A1 (en) | 2005-06-10 | 2006-12-21 | Casio Computer Co., Ltd. | Thin film transistor having oxide semiconductor layer and manufacturing method thereof |
EP1737044A1 (en) | 2004-03-12 | 2006-12-27 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US20060292777A1 (en) | 2005-06-27 | 2006-12-28 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
US20070018075A1 (en) * | 2005-07-21 | 2007-01-25 | Stmicroelectronics S.A. | Image sensor |
US20070024187A1 (en) | 2005-07-28 | 2007-02-01 | Shin Hyun S | Organic light emitting display (OLED) and its method of fabrication |
US20070046191A1 (en) | 2005-08-23 | 2007-03-01 | Canon Kabushiki Kaisha | Organic electroluminescent display device and manufacturing method thereof |
US20070054507A1 (en) | 2005-09-06 | 2007-03-08 | Canon Kabushiki Kaisha | Method of fabricating oxide semiconductor device |
US20070052025A1 (en) | 2005-09-06 | 2007-03-08 | Canon Kabushiki Kaisha | Oxide semiconductor thin film transistor and method of manufacturing the same |
JP2007096055A (ja) | 2005-09-29 | 2007-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
US20070090365A1 (en) | 2005-10-20 | 2007-04-26 | Canon Kabushiki Kaisha | Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2007123861A (ja) | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US20070108446A1 (en) | 2005-11-15 | 2007-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20070152217A1 (en) | 2005-12-29 | 2007-07-05 | Chih-Ming Lai | Pixel structure of active matrix organic light-emitting diode and method for fabricating the same |
US20070172591A1 (en) | 2006-01-21 | 2007-07-26 | Samsung Electronics Co., Ltd. | METHOD OF FABRICATING ZnO FILM AND THIN FILM TRANSISTOR ADOPTING THE ZnO FILM |
US20070187678A1 (en) | 2006-02-15 | 2007-08-16 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
US20070187760A1 (en) | 2006-02-02 | 2007-08-16 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US20070272922A1 (en) | 2006-04-11 | 2007-11-29 | Samsung Electronics Co. Ltd. | ZnO thin film transistor and method of forming the same |
US20070287296A1 (en) | 2006-06-13 | 2007-12-13 | Canon Kabushiki Kaisha | Dry etching method for oxide semiconductor film |
US20080006877A1 (en) | 2004-09-17 | 2008-01-10 | Peter Mardilovich | Method of Forming a Solution Processed Device |
US7323356B2 (en) | 2002-02-21 | 2008-01-29 | Japan Science And Technology Agency | LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film |
US20080038882A1 (en) | 2006-08-09 | 2008-02-14 | Kazushige Takechi | Thin-film device and method of fabricating the same |
US20080038929A1 (en) | 2006-08-09 | 2008-02-14 | Canon Kabushiki Kaisha | Method of dry etching oxide semiconductor film |
US20080050595A1 (en) | 2006-01-11 | 2008-02-28 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
US20080073653A1 (en) | 2006-09-27 | 2008-03-27 | Canon Kabushiki Kaisha | Semiconductor apparatus and method of manufacturing the same |
US20080083950A1 (en) | 2006-10-10 | 2008-04-10 | Alfred I-Tsung Pan | Fused nanocrystal thin film semiconductor and method |
US20080106191A1 (en) | 2006-09-27 | 2008-05-08 | Seiko Epson Corporation | Electronic device, organic electroluminescence device, and organic thin film semiconductor device |
US20080128689A1 (en) | 2006-11-29 | 2008-06-05 | Je-Hun Lee | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
US20080129195A1 (en) | 2006-12-04 | 2008-06-05 | Toppan Printing Co., Ltd. | Color el display and method for producing the same |
US7385224B2 (en) | 2004-09-02 | 2008-06-10 | Casio Computer Co., Ltd. | Thin film transistor having an etching protection film and manufacturing method thereof |
US20080158138A1 (en) * | 2006-12-27 | 2008-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof, and electronic device with the liquid crystal display device |
US20080166834A1 (en) | 2007-01-05 | 2008-07-10 | Samsung Electronics Co., Ltd. | Thin film etching method |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US20080182358A1 (en) | 2007-01-26 | 2008-07-31 | Cowdery-Corvan Peter J | Process for atomic layer deposition |
US7411209B2 (en) | 2006-09-15 | 2008-08-12 | Canon Kabushiki Kaisha | Field-effect transistor and method for manufacturing the same |
US20080224133A1 (en) | 2007-03-14 | 2008-09-18 | Jin-Seong Park | Thin film transistor and organic light-emitting display device having the thin film transistor |
US20080258143A1 (en) | 2007-04-18 | 2008-10-23 | Samsung Electronics Co., Ltd. | Thin film transitor substrate and method of manufacturing the same |
US20080258140A1 (en) | 2007-04-20 | 2008-10-23 | Samsung Electronics Co., Ltd. | Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor |
US20080258141A1 (en) | 2007-04-19 | 2008-10-23 | Samsung Electronics Co., Ltd. | Thin film transistor, method of manufacturing the same, and flat panel display having the same |
US20080258139A1 (en) | 2007-04-17 | 2008-10-23 | Toppan Printing Co., Ltd. | Structure with transistor |
US7453087B2 (en) | 2005-09-06 | 2008-11-18 | Canon Kabushiki Kaisha | Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer |
US20080296568A1 (en) | 2007-05-29 | 2008-12-04 | Samsung Electronics Co., Ltd | Thin film transistors and methods of manufacturing the same |
US20080308806A1 (en) | 2005-09-29 | 2008-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US7501293B2 (en) | 2002-06-13 | 2009-03-10 | Murata Manufacturing Co., Ltd. | Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device |
US20090073325A1 (en) | 2005-01-21 | 2009-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, and electric device |
US20090114910A1 (en) | 2005-09-06 | 2009-05-07 | Canon Kabushiki Kaisha | Semiconductor device |
US20090134399A1 (en) | 2005-02-18 | 2009-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Method for Manufacturing the Same |
US20090152541A1 (en) | 2005-02-03 | 2009-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US20090152506A1 (en) | 2007-12-17 | 2009-06-18 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP2009224479A (ja) | 2008-03-14 | 2009-10-01 | Fujifilm Corp | 薄膜電界効果型トランジスタおよびその製造方法 |
US20100065844A1 (en) | 2008-09-18 | 2010-03-18 | Sony Corporation | Thin film transistor and method of manufacturing thin film transistor |
US20100092800A1 (en) | 2008-10-09 | 2010-04-15 | Canon Kabushiki Kaisha | Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device |
US20100109002A1 (en) | 2007-04-25 | 2010-05-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
US20100140609A1 (en) * | 2007-03-23 | 2010-06-10 | Koki Yano | Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor |
US20110136301A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20110136302A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20110204362A1 (en) | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20110212570A1 (en) | 2010-02-26 | 2011-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110212569A1 (en) | 2010-02-26 | 2011-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110263091A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US20110260171A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereofr |
US20110263084A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110263083A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110263082A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110263085A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110269266A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20120112184A1 (en) | 2010-11-05 | 2012-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003050405A (ja) * | 2000-11-15 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル |
JP5015470B2 (ja) * | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタ及びその製法 |
CN102332471B (zh) * | 2006-05-26 | 2015-10-07 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
JP5043499B2 (ja) * | 2007-05-02 | 2012-10-10 | 財団法人高知県産業振興センター | 電子素子及び電子素子の製造方法 |
JP5435907B2 (ja) * | 2007-08-17 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
WO2009093625A1 (ja) * | 2008-01-23 | 2009-07-30 | Idemitsu Kosan Co., Ltd. | 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置 |
JP5325446B2 (ja) * | 2008-04-16 | 2013-10-23 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
KR101496148B1 (ko) * | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
KR101456454B1 (ko) * | 2008-06-25 | 2014-11-03 | 주성엔지니어링(주) | 반도체 소자 및 이의 제조 방법 |
JP5430113B2 (ja) * | 2008-10-08 | 2014-02-26 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
KR101432764B1 (ko) * | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
KR20120106766A (ko) * | 2009-11-20 | 2012-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
JP5727204B2 (ja) * | 2009-12-11 | 2015-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
2012
- 2012-07-12 US US13/547,119 patent/US8643008B2/en active Active
- 2012-07-19 JP JP2012160136A patent/JP2013048219A/ja not_active Withdrawn
- 2012-07-20 KR KR1020120079076A patent/KR101424870B1/ko active IP Right Grant
-
2014
- 2014-04-24 KR KR1020140049359A patent/KR20140059770A/ko not_active Application Discontinuation
-
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- 2016-12-23 JP JP2016250186A patent/JP6363162B2/ja not_active Expired - Fee Related
Patent Citations (144)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528032A (en) | 1993-03-23 | 1996-06-18 | Esco Ltd | Thermal desorption gas spectrometer |
US5744864A (en) | 1995-08-03 | 1998-04-28 | U.S. Philips Corporation | Semiconductor device having a transparent switching element |
US5731856A (en) | 1995-12-30 | 1998-03-24 | Samsung Electronics Co., Ltd. | Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure |
US20030201450A1 (en) * | 1998-05-15 | 2003-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2000044236A (ja) | 1998-07-24 | 2000-02-15 | Hoya Corp | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
US6294274B1 (en) | 1998-11-16 | 2001-09-25 | Tdk Corporation | Oxide thin film |
US7064346B2 (en) | 1998-11-17 | 2006-06-20 | Japan Science And Technology Agency | Transistor and semiconductor device |
JP2000150900A (ja) | 1998-11-17 | 2000-05-30 | Japan Science & Technology Corp | トランジスタ及び半導体装置 |
US6727522B1 (en) | 1998-11-17 | 2004-04-27 | Japan Science And Technology Corporation | Transistor and semiconductor device |
US20010046027A1 (en) | 1999-09-03 | 2001-11-29 | Ya-Hsiang Tai | Liquid crystal display having stripe-shaped common electrodes formed above plate-shaped pixel electrodes |
JP2002076356A (ja) | 2000-09-01 | 2002-03-15 | Japan Science & Technology Corp | 半導体デバイス |
US20020056838A1 (en) | 2000-11-15 | 2002-05-16 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor array, method of producing the same, and display panel using the same |
US20020132454A1 (en) | 2001-03-19 | 2002-09-19 | Fuji Xerox Co., Ltd. | Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
US6563174B2 (en) | 2001-09-10 | 2003-05-13 | Sharp Kabushiki Kaisha | Thin film transistor and matrix display device |
JP2003086808A (ja) | 2001-09-10 | 2003-03-20 | Masashi Kawasaki | 薄膜トランジスタおよびマトリクス表示装置 |
JP2003086000A (ja) | 2001-09-10 | 2003-03-20 | Sharp Corp | 半導体記憶装置およびその試験方法 |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
US7323356B2 (en) | 2002-02-21 | 2008-01-29 | Japan Science And Technology Agency | LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film |
US20040038446A1 (en) | 2002-03-15 | 2004-02-26 | Sanyo Electric Co., Ltd.- | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
US20030189401A1 (en) | 2002-03-26 | 2003-10-09 | International Manufacturing And Engineering Services Co., Ltd. | Organic electroluminescent device |
US20030218222A1 (en) | 2002-05-21 | 2003-11-27 | The State Of Oregon Acting And Through The Oregon State Board Of Higher Education On Behalf Of | Transistor structures and methods for making the same |
US7501293B2 (en) | 2002-06-13 | 2009-03-10 | Murata Manufacturing Co., Ltd. | Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
JP2004103957A (ja) | 2002-09-11 | 2004-04-02 | Japan Science & Technology Corp | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
US20060035452A1 (en) | 2002-10-11 | 2006-02-16 | Carcia Peter F | Transparent oxide semiconductor thin film transistor |
US20040127038A1 (en) | 2002-10-11 | 2004-07-01 | Carcia Peter Francis | Transparent oxide semiconductor thin film transistors |
JP2004273614A (ja) | 2003-03-06 | 2004-09-30 | Sharp Corp | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
WO2004114391A1 (ja) | 2003-06-20 | 2004-12-29 | Sharp Kabushiki Kaisha | 半導体装置およびその製造方法ならびに電子デバイス |
US20060244107A1 (en) | 2003-06-20 | 2006-11-02 | Toshinori Sugihara | Semiconductor device, manufacturing method, and electronic device |
US20050017302A1 (en) * | 2003-07-25 | 2005-01-27 | Randy Hoffman | Transistor including a deposited channel region having a doped portion |
US20050040393A1 (en) * | 2003-08-22 | 2005-02-24 | Hong Sungkwon C. | Imaging with gate controlled charge storage |
US20090278122A1 (en) | 2004-03-12 | 2009-11-12 | Japan Science And Technology Agency | Amorphous oxide and thin film transistor |
US20090280600A1 (en) | 2004-03-12 | 2009-11-12 | Japan Science And Technology Agency | Amorphous oxide and thin film transistor |
EP1737044A1 (en) | 2004-03-12 | 2006-12-27 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7462862B2 (en) | 2004-03-12 | 2008-12-09 | Hewlett-Packard Development Company, L.P. | Transistor using an isovalent semiconductor oxide as the active channel layer |
US20050199959A1 (en) | 2004-03-12 | 2005-09-15 | Chiang Hai Q. | Semiconductor device |
US20070194379A1 (en) * | 2004-03-12 | 2007-08-23 | Japan Science And Technology Agency | Amorphous Oxide And Thin Film Transistor |
EP2226847A2 (en) | 2004-03-12 | 2010-09-08 | Japan Science And Technology Agency | Amorphous oxide and thin film transistor |
US20080254569A1 (en) | 2004-03-12 | 2008-10-16 | Hoffman Randy L | Semiconductor Device |
US20060043377A1 (en) | 2004-03-12 | 2006-03-02 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
US7385224B2 (en) | 2004-09-02 | 2008-06-10 | Casio Computer Co., Ltd. | Thin film transistor having an etching protection film and manufacturing method thereof |
US20080006877A1 (en) | 2004-09-17 | 2008-01-10 | Peter Mardilovich | Method of Forming a Solution Processed Device |
US20060091793A1 (en) | 2004-11-02 | 2006-05-04 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US20060108636A1 (en) | 2004-11-10 | 2006-05-25 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US20060113549A1 (en) | 2004-11-10 | 2006-06-01 | Canon Kabushiki Kaisha | Light-emitting device |
US20060108529A1 (en) | 2004-11-10 | 2006-05-25 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US20060110867A1 (en) | 2004-11-10 | 2006-05-25 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US20060113539A1 (en) | 2004-11-10 | 2006-06-01 | Canon Kabushiki Kaisha | Field effect transistor |
US20060113565A1 (en) | 2004-11-10 | 2006-06-01 | Canon Kabushiki Kaisha | Electric elements and circuits utilizing amorphous oxides |
US20060113536A1 (en) | 2004-11-10 | 2006-06-01 | Canon Kabushiki Kaisha | Display |
US20090073325A1 (en) | 2005-01-21 | 2009-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, and electric device |
US20060169973A1 (en) | 2005-01-28 | 2006-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US20060170111A1 (en) | 2005-01-28 | 2006-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US20090152541A1 (en) | 2005-02-03 | 2009-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US20090134399A1 (en) | 2005-02-18 | 2009-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Method for Manufacturing the Same |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US20060208977A1 (en) | 2005-03-18 | 2006-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US20060231882A1 (en) | 2005-03-28 | 2006-10-19 | Il-Doo Kim | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US20060228974A1 (en) | 2005-03-31 | 2006-10-12 | Theiss Steven D | Methods of making displays |
US20060238135A1 (en) | 2005-04-20 | 2006-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US20060284172A1 (en) | 2005-06-10 | 2006-12-21 | Casio Computer Co., Ltd. | Thin film transistor having oxide semiconductor layer and manufacturing method thereof |
US20060284171A1 (en) | 2005-06-16 | 2006-12-21 | Levy David H | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US20060292777A1 (en) | 2005-06-27 | 2006-12-28 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
US20070018075A1 (en) * | 2005-07-21 | 2007-01-25 | Stmicroelectronics S.A. | Image sensor |
US20070024187A1 (en) | 2005-07-28 | 2007-02-01 | Shin Hyun S | Organic light emitting display (OLED) and its method of fabrication |
US20070046191A1 (en) | 2005-08-23 | 2007-03-01 | Canon Kabushiki Kaisha | Organic electroluminescent display device and manufacturing method thereof |
US20090114910A1 (en) | 2005-09-06 | 2009-05-07 | Canon Kabushiki Kaisha | Semiconductor device |
US7468304B2 (en) | 2005-09-06 | 2008-12-23 | Canon Kabushiki Kaisha | Method of fabricating oxide semiconductor device |
US20070052025A1 (en) | 2005-09-06 | 2007-03-08 | Canon Kabushiki Kaisha | Oxide semiconductor thin film transistor and method of manufacturing the same |
US20070054507A1 (en) | 2005-09-06 | 2007-03-08 | Canon Kabushiki Kaisha | Method of fabricating oxide semiconductor device |
US7453087B2 (en) | 2005-09-06 | 2008-11-18 | Canon Kabushiki Kaisha | Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer |
US7910490B2 (en) | 2005-09-29 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7732819B2 (en) | 2005-09-29 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20110163311A1 (en) | 2005-09-29 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US20110121290A1 (en) | 2005-09-29 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US20110117697A1 (en) | 2005-09-29 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US20110104851A1 (en) | 2005-09-29 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US7932521B2 (en) | 2005-09-29 | 2011-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2007096055A (ja) | 2005-09-29 | 2007-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
US20090008639A1 (en) | 2005-09-29 | 2009-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
JP2007123861A (ja) | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US20100136743A1 (en) | 2005-09-29 | 2010-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US20080308805A1 (en) | 2005-09-29 | 2008-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US7674650B2 (en) | 2005-09-29 | 2010-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20090305461A1 (en) | 2005-09-29 | 2009-12-10 | Semiconductor Energy Laboratory Co,. Ltd. | Semiconductor Device And Manufacturing Method Thereof |
US20080308796A1 (en) | 2005-09-29 | 2008-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US20080308806A1 (en) | 2005-09-29 | 2008-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US20070090365A1 (en) | 2005-10-20 | 2007-04-26 | Canon Kabushiki Kaisha | Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor |
US20070108446A1 (en) | 2005-11-15 | 2007-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20070152217A1 (en) | 2005-12-29 | 2007-07-05 | Chih-Ming Lai | Pixel structure of active matrix organic light-emitting diode and method for fabricating the same |
US20090068773A1 (en) | 2005-12-29 | 2009-03-12 | Industrial Technology Research Institute | Method for fabricating pixel structure of active matrix organic light-emitting diode |
US20080050595A1 (en) | 2006-01-11 | 2008-02-28 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
US20070172591A1 (en) | 2006-01-21 | 2007-07-26 | Samsung Electronics Co., Ltd. | METHOD OF FABRICATING ZnO FILM AND THIN FILM TRANSISTOR ADOPTING THE ZnO FILM |
US20070187760A1 (en) | 2006-02-02 | 2007-08-16 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US20070187678A1 (en) | 2006-02-15 | 2007-08-16 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
US20070272922A1 (en) | 2006-04-11 | 2007-11-29 | Samsung Electronics Co. Ltd. | ZnO thin film transistor and method of forming the same |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
US20070287296A1 (en) | 2006-06-13 | 2007-12-13 | Canon Kabushiki Kaisha | Dry etching method for oxide semiconductor film |
US20080038882A1 (en) | 2006-08-09 | 2008-02-14 | Kazushige Takechi | Thin-film device and method of fabricating the same |
US20080038929A1 (en) | 2006-08-09 | 2008-02-14 | Canon Kabushiki Kaisha | Method of dry etching oxide semiconductor film |
US7411209B2 (en) | 2006-09-15 | 2008-08-12 | Canon Kabushiki Kaisha | Field-effect transistor and method for manufacturing the same |
US20080106191A1 (en) | 2006-09-27 | 2008-05-08 | Seiko Epson Corporation | Electronic device, organic electroluminescence device, and organic thin film semiconductor device |
US20080073653A1 (en) | 2006-09-27 | 2008-03-27 | Canon Kabushiki Kaisha | Semiconductor apparatus and method of manufacturing the same |
US20080083950A1 (en) | 2006-10-10 | 2008-04-10 | Alfred I-Tsung Pan | Fused nanocrystal thin film semiconductor and method |
US20080128689A1 (en) | 2006-11-29 | 2008-06-05 | Je-Hun Lee | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
US20080129195A1 (en) | 2006-12-04 | 2008-06-05 | Toppan Printing Co., Ltd. | Color el display and method for producing the same |
US20080158138A1 (en) * | 2006-12-27 | 2008-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof, and electronic device with the liquid crystal display device |
US20080166834A1 (en) | 2007-01-05 | 2008-07-10 | Samsung Electronics Co., Ltd. | Thin film etching method |
US20080182358A1 (en) | 2007-01-26 | 2008-07-31 | Cowdery-Corvan Peter J | Process for atomic layer deposition |
US20080224133A1 (en) | 2007-03-14 | 2008-09-18 | Jin-Seong Park | Thin film transistor and organic light-emitting display device having the thin film transistor |
US20100140609A1 (en) * | 2007-03-23 | 2010-06-10 | Koki Yano | Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor |
US20080258139A1 (en) | 2007-04-17 | 2008-10-23 | Toppan Printing Co., Ltd. | Structure with transistor |
US20080258143A1 (en) | 2007-04-18 | 2008-10-23 | Samsung Electronics Co., Ltd. | Thin film transitor substrate and method of manufacturing the same |
US20080258141A1 (en) | 2007-04-19 | 2008-10-23 | Samsung Electronics Co., Ltd. | Thin film transistor, method of manufacturing the same, and flat panel display having the same |
US20080258140A1 (en) | 2007-04-20 | 2008-10-23 | Samsung Electronics Co., Ltd. | Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor |
US20100109002A1 (en) | 2007-04-25 | 2010-05-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
US20080296568A1 (en) | 2007-05-29 | 2008-12-04 | Samsung Electronics Co., Ltd | Thin film transistors and methods of manufacturing the same |
US20090152506A1 (en) | 2007-12-17 | 2009-06-18 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP2009224479A (ja) | 2008-03-14 | 2009-10-01 | Fujifilm Corp | 薄膜電界効果型トランジスタおよびその製造方法 |
US20100065844A1 (en) | 2008-09-18 | 2010-03-18 | Sony Corporation | Thin film transistor and method of manufacturing thin film transistor |
US20100092800A1 (en) | 2008-10-09 | 2010-04-15 | Canon Kabushiki Kaisha | Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device |
US20110136301A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20110136302A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20120149147A1 (en) | 2009-12-04 | 2012-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20120146019A1 (en) | 2009-12-04 | 2012-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20110204362A1 (en) | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20110212570A1 (en) | 2010-02-26 | 2011-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110212569A1 (en) | 2010-02-26 | 2011-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110263084A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110263083A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110263082A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110263085A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110260171A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereofr |
US20110263091A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US20110269266A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20120112184A1 (en) | 2010-11-05 | 2012-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Non-Patent Citations (71)
Title |
---|
Asakuma.N et al., "Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation with Ultraviolet Lamp,", Journal of Sol-Gel Science and Technology, 2003, vol. 26, pp. 181-184. |
Asaoka.Y et al., "29.1: Polarizer-Free Reflective LCD Combined With Ultra Low-Power Driving Technology,", SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 395-398. |
Chern.H et al., "An Analytical Model for the Above-Threshold Characteristics of Polysilicon Thin-Film Transistors,", IEEE Transactions on Electron Devices, Jul. 1, 1995, vol. 42, No. 7, pp. 1240-1246. |
Cho.D et al., "21.2:AL and SN-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane,", SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 280-283. |
Clark.S et al., "First Principles Methods Using Castep,", Zeitschrift fur Kristallographie, 2005, vol. 220, pp. 567-570. |
Coates.D et al., "Optical Studies of the Amorphous Liquid-Cholesteric Liquid Crystal Transition:The "Blue Phase",", Physics Letters, Sep. 10, 1973, vol. 45A, No. 2, pp. 115-116. |
Costello.M et al., "Electron Microscopy of a Cholesteric Liquid Crystal and Its Blue Phase,", Phys. Rev. A (Physical Review. A), May 1, 1984, vol. 29, No. 5, pp. 2957-2959. |
Dembo.H et al., "RFCPUS on Glass and Plastic Substrates Fabricated by TFT Transfer Technology,", IEDM 05: Technical Digest of International Electron Devices Meeting, Dec. 5, 2005, pp. 1067-1069. |
Fortunato.E et al., "Wide-Bandgap High-Mobility ZNO Thin-Film Transistors Produced at Room Temperature,", Appl. Phys. Lett. (Applied Physics Letters) , Sep. 27, 2004, vol. 85, No. 13, pp. 2541-2543. |
Fung.T et al., "2-D Numerical Simulation of High Performance Amorphous In-Ga-Zn-O TFTs for Flat Panel Displays,", AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 251-252, The Japan Society of Applied Physics. |
Godo.H et al., "P-9:Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In-Ga-Zn-Oxide TFT,", SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 1110-1112. |
Godo.H et al., "Temperature Dependence of Characteristics and Electronic Structure for Amorphous In-Ga-Zn-Oxide TFT,", AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 41-44. |
Hayashi.R et al., "42.1: Invited Paper: Improved Amorphous In-Ga-Zn-O TFTS,", SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 621-624. |
Hirao.T et al., "Novel Top-Gate Zinc Oxide Thin-Film Transistors (ZNO TFTS) for AMLCDS,", Journal of the SID, 2007, vol. 15, No. 1, pp. 17-22. |
Hosono.H et al., "Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples,", J. Non-Cryst. Solids (Journal of Non-Crystalline Solids), 1996, vol. 198-200, pp. 165-169. |
Hosono.H, "68.3:Invited Paper:Transparent Amorphous Oxide Semiconductors for High Performance TFT,", SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1830-1833. |
Hsieh.H et al., "P-29:Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States,", SID Digest '08 : SID International Symposium Digest of Technical Papers, 2008, vol. 39, pp. 1277-1280. |
Ikeda.T et al., "Full Functional System Liquid Crystal Display Using CG-Silicon Technology,", SID Digest '04 : SID International Symposium Digest of Technical Papers, 2004, vol. 35, pp. 860-863. |
Janotti.A et al., "Native Point Defects in ZnO,", Phys. Rev. B (Physical Review. B), Oct. 4, 2007, vol. 76, No. 16, pp. 165202-1-165202-22. |
Janotti.A et al., "Oxygen Vacancies in ZnO,", Appl. Phys. Lett. (Applied Physics Letters) , 2005, vol. 87, pp. 122102-1-122102-3. |
Jeong.J et al., "3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array,", SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, No. 1, pp. 1-4. |
Jin.D et al., "65.2:Distinguished Paper:World-Largest (6.5'') Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties,", SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 983-985. |
Jin.D et al., "65.2:Distinguished Paper:World-Largest (6.5″) Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties,", SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 983-985. |
Kanno.H et al., "White Stacked Electrophosphorecent Organic Light-Emitting Devices Employing MOO3 as a Charge-Generation Layer,", Adv. Mater. (Advanced Materials), 2006, vol. 18, No. 3, pp. 339-342. |
Kikuchi.H et al., "39.1:Invited Paper:Optically Isotropic Nano-Structured Liquid Crystal Composites for Display Applications,", SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 578-581. |
Kikuchi.H et al., "62.2:Invited Paper:Fast Electro-Optical Switching in Polymer-Stabilized Liquid Crystalline Blue Phases for Display Application,", SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1737-1740. |
Kikuchi.H et al., "Polymer-Stabilized Liquid Crystal Blue Phases,", Nature Materials, Sep. 2, 2002, vol. 1, pp. 64-68. |
Kim.S et al., "High-Performance oxide thin film transistors passivated by various gas plasmas,", 214th ECS Meeting, 2008, No. 2317, ECS. |
Kimizuka.N et al., "Spinel,YBFE2O4, and YB2FE3O7 Types of Structures for Compounds in the In2O3 and SC2O3-A2O3-BO Systems [A; FE, GA, OR AL; B: MG, MN, FE, NI, CU, OR ZN] at Temperatures Over 1000 °C,", Journal of Solid State Chemistry, 1985, vol. 60, pp. 382-384. |
Kimizuka.N et al., "Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System,", Journal of Solid State Chemistry, Apr. 1, 1995, vol. 116, No. 1, pp. 170-178. |
Kitzerow.H et al., "Observation of Blue Phases in Chiral Networks,", Liquid Crystals, 1993, vol. 14, No. 3, pp. 911-916. |
Kurokawa.Y et al., "UHF RFCPUS on Flexible and Glass Substrates for Secure RFID Systems,", Journal of Solid-State Circuits , 2008, vol. 43, No. 1, pp. 292-299. |
Lany.S et al., "Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides,", Phys. Rev. Lett. (Physical Review Letters), Jan. 26, 2007, vol. 98, pp. 045501-1-045501-4. |
Lee.H et al., "Current Status of, Challenges to, and Perspective View of AM-OLED ,", IDW '06 : Proceedings of the 13th International Display Workshops, Dec. 7, 2006, pp. 663-666. |
Lee.J et al., "World'S Largest (15-Inch) XGA AMLCD Panel Using IGZO Oxide TFT,", SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 625-628. |
Lee.M et al., "15.4:Excellent Performance of Indium-Oxide-Based Thin-Film Transistors by DC Sputtering,", SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 191-193. |
Li.C et al., "Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In,Ga; m=Integer) Described by Four-Dimensional Superspace Group,", Journal of Solid State Chemistry, 1998, vol. 139, pp. 347-355. |
Machine translation Japan application No. JP2007-123861 on May 10, 2013. * |
Masuda.S et al., "Transparent thin film transistors using ZnO as an active channel layer and their electrical properties,", J. Appl. Phys. (Journal of Applied Physics) , Feb. 1, 2003, vol. 93, No. 3, pp. 1624-1630. |
Meiboom.S et al., "Theory of the Blue Phase of Cholesteric Liquid Crystals,", Phys. Rev. Lett. (Physical Review Letters), May 4, 1981, vol. 46, No. 18, pp. 1216-1219. |
Miyasaka.M, "SUFTLA Flexible Microelectronics on Their Way to Business,", SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1673-1676. |
Mo.Y et al., "Amorphous Oxide TFT Backplanes for Large Size AMOLED Displays,", IDW '08 : Proceedings of the 6th International Display Workshops, Dec. 3, 2008, pp. 581-584. |
Nakamura.M et al., "The phase relations in the In2O3-Ga2ZnO4-ZnO system at 1350 °C,", Journal of Solid State Chemistry, Aug. 1, 1991, vol. 93, No. 2, pp. 298-315. |
Nakamura.M, "Synthesis of Homologous Compound with New Long-Period Structure,", NIRIM Newsletter, Mar. 1, 1995, vol. 150, pp. 1-4. |
Nomura.K et al., "Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors,", Jpn. J. Appl. Phys. (Japanese Journal of Applied Physics) , 2006, vol. 45, No. 5B, pp. 4303-4308. |
Nomura.K et al., "Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films,", Appl. Phys. Lett. (Applied Physics Letters) , Sep. 13, 2004, vol. 85, No. 11, pp. 1993-1995. |
Nomura.K et al., "Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors,", Nature, Nov. 25, 2004, vol. 432, pp. 488-492. |
Nomura.K et al., "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,", Science, May 23, 2003, vol. 300, No. 5623, pp. 1269-1272. |
Nowatari.H et al., "60.2: Intermediate Connector With Suppressed Voltage Loss for White Tandem OLEDS,", SID DIgest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 899-902. |
Oba.F et al., "Defect energetics in ZnO: A hybrid Hartree-Fock density functional study,", Phys. Rev. B (Physical Review. B), 2008, vol. 77, pp. 245202-1-245202-6. |
Oh.M et al., "Improving the Gate Stability of ZNO Thin-Film Transistors With Aluminum Oxide Dielectric Layers,", J. Electrochem. Soc. (Journal of the Electrochemical Society), 2008, vol. 155, No. 12, pp. H1009-H1014. |
Ohara.H et al., "21.3:4.0 in. QVGA AMOLED Display Using In-Ga-Zn-Oxide TFTS With a Novel Passivation Layer,", SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 284-287. |
Ohara.H et al., "Amorphous In-Ga-Zn-Oxide TFTs with Suppressed Variation for 4.0 inch QVGA AMOLED Display,", AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 227-230, The Japan Society of Applied Physics.. |
Orita.M et al., "Amorphous transparent conductive oxide InGaO3(ZnO)m (m <4):a Zn4s conductor,", Philosophical Magazine, 2001, vol. 81, No. 5, pp. 501-515. |
Orita.M et al., "Mechanism of Electrical Conductivity of Transparent InGaZnO4,", Phys. Rev. B (Physical Review. B), Jan. 15, 2000, vol. 61, No. 3, pp. 1811-1816. |
Osada.T et al., "15.2: Development of Driver-Integrated Panel using Amorphous In-Ga-Zn-Oxide TFT,", SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 184-187. |
Osada.T et al., "Development of Driver-Integrated Panel Using Amorphous In-Ga-Zn-Oxide TFT,", AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 33-36. |
Park.J et al., "Amorphous Indium-Gallium-Zinc Oxide TFTS and Their Application for Large Size AMOLED,", AM-FPD '08 Digest of Technical Papers, Jul. 2, 2009, pp. 275-278. |
Park.J et al., "Dry etching of ZnO films and plasma-induced damage to optical properties,", J. Vac. Sci. Technol. B (Journal of Vacuum Science & Technology B), Mar. 1, 2003, vol. 21, No. 2, pp. 800-803. |
Park.J et al., "Electronic Transport Properties of Amorphous Indium-Gallium-Zinc Oxide Semiconductor Upon Exposure to Water,", Appl. Phys. Lett. (Applied Physics Letters) , 2008, vol. 92, pp. 072104-1-072104-3. |
Park.J et al., "High performance amorphous oxide thin film transistors with self-aligned top-gate structure,", IEDM '09: Technical Digest of International Electron Devices Meeting, Dec. 7, 2009, pp. 191-194. |
Park.J et al., "Improvements in the Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Ar Plasma Treatment,", Appl. Phys. Lett. (Applied Physics Letters) , Jun. 26, 2007, vol. 90, No. 25, pp. 262106-1-262106-3. |
Park.S et al., "Challenge to Future Displays: Transparent AM-OLED Driven by Peald Grown ZNO TFT,", IMID '07 Digest, 2007, pp. 1249-1252. |
Park.Sang-Hee et al., "42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM-OLED Display,", SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 629-632. |
Prins.M et al., "A Ferroelectric Transparent Thin-Film Transistor,", Appl. Phys. Lett. (Applied Physics Letters) , Jun. 17, 1996, vol. 68, No. 25, pp. 3650-3652. |
Sakata.J et al., "Development of 4.0-In. AMOLED Display With Driver Circuit Using Amorphous In-Ga-Zn-Oxide TFTS,", IDW '09 : Proceedings of the 16th International Display Workshops, 2009, pp. 689-692. |
Son.K et al., "42.4L: Late-News Paper: 4 Inch QVGA Amoled Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga2O3-In2O3-ZnO) TFT,", SID Digest '08 : SID Internatinoal Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 633-636. |
Takahashi.M et al., "Theoretical Analysis of IGZO Transparent Amorphous Oxide Semiconductor,", IDW '08 : Proceedings of the 15th International Display Workshops, Dec. 3, 2008, pp. 1637-1640. |
Tsuda.K et al., "Ultra Low Power Consumption Technologies for Mobile TFT-LCDs ,", IDW '02 : Proceedings of the 9th International Display Workshops, Dec. 4, 2002, pp. 295-298. |
Ueno.K et al., "Field-Effect Transistor on SrTiO3 With Sputtered Al2O3 Gate Insulator,", Appl. Phys. Lett. (Applied Physics Letters) , Sep. 1, 2003, vol. 83, No. 9, pp. 1755-1757. |
Van de Walle.C, "Hydrogen as a Cause of Doping in Zinc Oxide,", Phys. Rev. Lett. (Physical Review Letters), Jul. 31, 2000, vol. 85, No. 5, pp. 1012-1015. |
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JP2017069576A (ja) | 2017-04-06 |
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KR20140059770A (ko) | 2014-05-16 |
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