US7724556B2 - Power converter - Google Patents

Power converter Download PDF

Info

Publication number
US7724556B2
US7724556B2 US11/719,359 US71935905A US7724556B2 US 7724556 B2 US7724556 B2 US 7724556B2 US 71935905 A US71935905 A US 71935905A US 7724556 B2 US7724556 B2 US 7724556B2
Authority
US
United States
Prior art keywords
voltage
main circuit
switching element
reverse
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US11/719,359
Other languages
English (en)
Other versions
US20080253158A1 (en
Inventor
Hiroshi Mochikawa
Tateo Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004330069A external-priority patent/JP4212546B2/ja
Priority claimed from JP2004330070A external-priority patent/JP4204534B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Assigned to KABUSHIKI KAISHA TOSHIBA reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOYAMA, TATEO, MOCHIKAWA, HIROSHI
Publication of US20080253158A1 publication Critical patent/US20080253158A1/en
Application granted granted Critical
Publication of US7724556B2 publication Critical patent/US7724556B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0051—Diode reverse recovery losses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H02M1/344—Active dissipative snubbers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a power conversion device constructed by connecting free-wheel diodes in anti-parallel with main circuit switching elements.
  • free-wheel diodes Du to Dw and Dx to Dz are connected in anti-parallel with MOSFETs Su to Sw and Sx to Sz.
  • MOSFETs Su to Sw and Sx to Sz are turned OFF, the current energy accumulated in the load M is fed back through the free-wheel diodes Du to Dw and Dx to Dz.
  • FIG. 3 is a circuit diagram of a prior art power conversion device comprising a reverse voltage application circuit.
  • the DC voltage source 1 is obtained by rectifying a three-phase AC power source; a smoothing capacitor 2 and a main inverter circuit 3 are connected between the positive side DC bus 1 a and the load side DC bus 1 b of this DC voltage source 1 .
  • the main inverter circuit 3 comprises a three-phase bridge connection of MOSFETs 4 u to 4 w , 4 x to 4 z corresponding to the main circuit switching elements; free-wheel diodes 5 u to 5 w and 5 x to 5 z are connected in anti-parallel between the collector and emitter of the MOSFETs 4 u to 4 w , 4 x to 4 z ; the load 6 (for example a motor) is connected on the output side of the main inverter circuit 3 .
  • a control circuit (to be described) is provided that controls the main inverter circuit 3 .
  • This control circuit is positioned as a sub-circuit (auxiliary circuit) in regard to the main inverter circuit 3 referred to above.
  • Reverse voltage application circuits 7 are connected with the respective free-wheel diodes 5 u to 5 w , 5 x to 5 z .
  • These reverse voltage application circuits 7 comprise low-voltage DC voltage sources 8 of lower voltage than the DC voltage source 1 ; power lines 8 a , 8 b of the low-voltage DC voltage sources 8 are respectively connected between the collector and emitter of the MOSFETs 4 u to 4 w , 4 x to 4 z.
  • Each reverse voltage application circuit 7 comprises a base drive circuit 9 ; the power lines 9 a , 9 b of the base drive circuit 9 are connected with the power lines 8 a , 8 b of the low-voltage DC voltage source 8 , so that, when drive signals SGu to SGw, SGx to SGz (not shown) are output to the base drive circuit 9 from a switching timing generating circuit, not shown, the base drive circuit 9 is driven by the power from the low-voltage DC voltage source 8 , and the MOSFETs 4 u to 4 w , 4 x to 4 z are turned ON.
  • the reverse voltage application circuits 7 comprise MOSFETs 17 corresponding to reverse voltage application switching elements; the MOSFET 17 is interposed on the power line 8 a of the low-voltage DC voltage source 8 ; for the MOSFETs 17 , MOSFETs of a lower voltage withstanding ability than the MOSFETs 4 u to 4 w , 4 x to 4 z are selected. These MOSFETs 17 are turned ON during reverse recovery of the free-wheel diodes.
  • the reverse voltage application circuits 7 comprise a diode 13 and capacitor 14 ; these diodes 13 and capacitors 14 are connected in parallel with the power lines 8 a of the low-voltage DC voltage sources 8 , so that, when the MOSFETs 4 u to 4 w , 4 x to 4 z are turned ON, the capacitors 14 are charged from the low-voltage DC voltage sources 8 through the diodes 13 . In this way, the drive power of the base drive circuit 18 is charged on the capacitors 14 .
  • a capacitor 15 is connected between the power lines 8 a , 8 b and a diode 29 is connected in series with the power line 8 a . Also, a diode 16 is connected between the power lines 8 a , 8 b.
  • the power lines 18 a , 18 b of the base drive circuit 18 are connected with both terminals of the capacitor 14 , so that, when drive signals SGru to SGrw, SGrx to SGrz (not shown) are output to the base drive circuit 18 from potential discrimination circuits (voltage discrimination circuits), not shown, that output drive signals in response to the potential of the points A, B, C of the main inverter circuit 3 , the base drive circuit 18 is driven by the charged power of the capacitor 14 , thereby turning the MOSFET 17 ON. In this way, reverse voltage smaller than the DC voltage source 1 is applied from the low-voltage DC voltage source 8 through the MOSFET 17 to the free-wheel diodes 5 u to 5 w and 5 x to 5 z.
  • the current of the main circuit temporarily flows to the low-voltage DC voltage power source 8 of the reverse voltage application circuit, so there is considerable voltage fluctuation of the auxiliary power source.
  • the current that is flowing in the free-wheel diodes is prevented from flowing by the reverse voltage application circuit 7 , so the current that was flowing in the free-wheel diodes temporarily flows into the reverse voltage application circuit 7 , with the result that a circuit is formed whereby the free-wheel diodes are bypassed through the low-voltage DC voltage power source 8 of the reverse voltage application circuit.
  • considerable voltage fluctuation of the low-voltage DC voltage power source 8 of the reverse voltage application circuit is produced.
  • the current capacity of the low-voltage DC voltage power source 8 of the reverse voltage application circuit must be made large.
  • An object of the present invention is to provide a power conversion device wherein the main circuit current flowing into the auxiliary power source of the reverse voltage application circuit during reverse recovery of the free-wheel diodes is suppressed and reverse recovery of the free-wheel diodes can be appropriately performed.
  • a further object of the present invention is to provide a power conversion device wherein reverse recovery of the free-wheel diodes can be appropriately performed without providing a detector to detect the direction of the current flowing through the free-wheel diodes and wherein the current of the main circuit flowing to the auxiliary power source of the reverse voltage application circuit during reverse recovery of the free-wheel diodes can be suppressed.
  • a power conversion device is constructed as follows. Specifically, a power conversion device according to the present invention comprises:
  • a reverse voltage application circuit that applies reverse voltage smaller than the DC voltage source to each of the free-wheel diodes when these free-wheel diodes cut off;
  • reverse voltage application circuit comprises:
  • a reverse voltage application switching element that is turned ON during reverse recovery of the free-wheel diodes and whose ability to withstand voltage is lower than the main circuit switching elements
  • the auxiliary power source comprises:
  • a current suppression circuit that suppresses the main circuit current flowing in the low-voltage DC voltage power source during reverse recovery of the free-wheel diodes, connected in series with the low-voltage DC voltage power source;
  • a power conversion device comprises:
  • a reverse voltage application circuit that applies reverse voltage smaller than the DC voltage source to each of the free-wheel diodes when these free-wheel diodes cut off;
  • reverse voltage application circuit comprises:
  • a main circuit switching control circuit comprising:
  • a reverse voltage application switching element that is turned ON during reverse recovery of the free-wheel diodes and whose ability to withstand voltage is lower than the main circuit switching elements
  • a high-speed auxiliary diode whose reverse recovery time is shorter than that of the free-wheel diodes; that changes over the main circuit switching elements and has a rest period of short time in which both main circuit switching elements are turned OFF when the set of a pair of main circuit switching elements mutually change over their ON condition and OFF condition;
  • a reverse voltage application switching control circuit that turns ON the reverse voltage application switching element during the rest period that commences at the time point where the main circuit switching element is turned OFF, and that turns this reverse voltage application switching element OFF after lapse of the rest period.
  • FIG. 1 is a circuit diagram showing an example of a prior art inverter circuit
  • FIG. 2 is a current waveform diagram showing a reverse recovery characteristic of a free-wheel diode
  • FIG. 3 is a circuit diagram showing an example of a prior art power conversion device
  • FIG. 4 is a circuit diagram of a power conversion device according to a first embodiment of the present invention.
  • FIG. 5 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a first embodiment of the present invention
  • FIG. 6 is a circuit diagram of a current suppression circuit according to a first and seventh embodiment
  • FIG. 7 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a second embodiment of the present invention.
  • FIG. 8 is a circuit diagram of major parts of a reverse voltage application circuit in the a power conversion device according to a third embodiment of the present invention.
  • FIG. 9 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a fourth embodiment of the present invention.
  • FIG. 10 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a fifth embodiment of the present invention.
  • FIG. 11 is a graph of the gradient curve of the ON resistance and reverse recovery time of a typical power MOSFET element characteristic
  • FIG. 12 is a circuit diagram of a power conversion device according to a sixth embodiment of the present invention.
  • FIG. 13 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a sixth embodiment of the present invention.
  • FIG. 14 is a diagram of a gate drive signal from a main circuit switching control circuit and a gate drive signal from a reverse voltage application switching control circuit in a sixth embodiment of the present invention.
  • FIG. 15 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a seventh embodiment of the present invention.
  • FIG. 16 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to an eighth embodiment of the present invention.
  • FIG. 17 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a ninth embodiment of the present invention.
  • FIG. 18 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a tenth embodiment of the present invention.
  • FIG. 19 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to an eleventh embodiment of the present invention.
  • FIG. 20A and FIG. 20B are diagrams of pulse loss of a gate drive signal of a positive side main circuit switching element in an eleventh embodiment of the present invention.
  • FIG. 21 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a twelfth embodiment of the present invention.
  • FIG. 22 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a thirteenth embodiment of the present invention.
  • FIG. 23 is a circuit diagram of major parts of a reverse voltage application circuit in a power conversion device according to a fourteenth embodiment of the present invention.
  • Embodiments of a power conversion device according to the present invention are described in detail below with reference to FIG. 4 to FIG. 23 .
  • FIG. 4 is a circuit diagram of a power conversion device according to a first embodiment of the present invention.
  • a current suppression circuit 10 that suppresses the main circuit current flowing to the low-voltage DC voltage power source 8 during reverse recovery of the free-wheel diodes 5 ( 5 u , 5 v , 5 w , 5 x , 5 y , 5 z ) in the reverse voltage application circuit 7 and a high frequency capacitor 15 A that has low internal impedance even in the high frequency band is connected in parallel with the series circuit of the low-voltage DC voltage power source 8 and current suppression circuit 10 .
  • Elements which are the same as in the case of FIG. 3 are given the same reference symbols and repeated description is dispensed with.
  • the voltage at the point A of the main inverter circuit 3 is detected and, when it is found that a condition exists in which reverse recovery of the free-wheel diode 5 u is being performed, a drive signal is output to the base drive circuit 18 , turning the MOSFET 17 ON. In this way, reverse voltage is applied to the free-wheel diode 5 u through the power line 8 a and the current flowing in the free-wheel diode 5 u is thereby diminished.
  • the main circuit current that was flowing on the P side of the DC voltage power source through the free-wheel diode 5 u from the load 6 flows into the reverse voltage application circuit 7 .
  • the main circuit current that has thus flowed into the reverse voltage application circuit flows into the low-voltage DC voltage power source 8 and high frequency capacitor 15 A, but, since the current suppression circuit 10 is connected in series with the low-voltage DC voltage power source 8 , the current flowing in the low-voltage voltage DC voltage power source 8 is suppressed, and flows in the direction of the high-frequency capacitor 15 A.
  • the main circuit current flowing in the low-voltage DC voltage power source can thereby be suppressed and the need to increase the current capacity of the constant voltage power source is eliminated.
  • the current that is needed for reverse recovery of the free-wheel diode 5 u can flow for a short time, so it is unnecessary to prolong the rest period when changing over ON/OFF of the set of a pair of main circuit switching elements 4 u , 4 x that turn ON/OFF in a complementary relationship. Consequently, deterioration (waveform deterioration) or other deterioration of control quality of the power conversion device generated due to the rest period can also be suppressed.
  • FIG. 5 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a first embodiment. It should be noted that, in FIG. 5 , description of the base drive circuits 9 and 18 etc is dispensed with.
  • the DC voltage source 1 is obtained by rectifying for example three-phase AC power and smoothing using a smoothing capacitor 2 .
  • a positive side DC bus 1 a and negative side DC bus 1 b extend from the DC voltage source 1 and two MOSFETs, namely, the main circuit switching elements 4 u , 4 x are connected in series between the positive side DC bus 1 a and negative side DC bus 1 b.
  • Both this positive side main circuit switching element 4 u and negative side main circuit switching element 4 x incorporate respective free-wheel diodes 5 u , 5 x .
  • a load terminal 11 that is connected with the load is connected from between the positive side main circuit switching element 4 u and negative side main circuit switching element 4 x ; also, a reverse voltage application circuit 7 is connected between the drain terminal and source terminal of the main circuit switching elements 4 (i.e. between the cathode terminal and the anode terminal of the free-wheel diodes 5 ).
  • the reverse voltage application circuit 7 is constituted by a series connection of an auxiliary power source 12 of lower voltage than the DC voltage source 1 and a reverse voltage application switching element 17 whose ability to withstand voltage is lower than that of the main circuit switching elements 4 , and a high-speed auxiliary diode 16 whose reverse recovery time is shorter than that of the free-wheel diodes 5 .
  • the auxiliary power source 12 is constituted by a series connection of the low-voltage DC voltage power source 8 , whose voltage is lower than about 1 ⁇ 4 of the voltage of the DC voltage source, a resistor constituting a current suppression circuit 10 , and a high-frequency capacitor 15 A whose internal impedance is low even in the high-frequency band.
  • the high-frequency capacitor 15 A there is employed a high-frequency capacitor such as a ceramic capacitor or film capacitor, rather than an electrolytic capacitor, such as is used for smoothing.
  • a high-frequency capacitor such as a ceramic capacitor or film capacitor, rather than an electrolytic capacitor, such as is used for smoothing.
  • the resistor constituting the current suppression circuit 10 there may also be employed for example wiring resistance such as copper foil pattern wiring resistance of a printed circuit board, or copper wire or copper sheet.
  • a constant current circuit as shown in FIG. 6 may be employed.
  • the discharge path linking the high-frequency capacitor 15 A, reverse voltage application switching element 17 , auxiliary diode 16 and free-wheel diode 5 is wired to be as short as possible, so as to reduce impedance.
  • the current that is necessary for reverse recovery of the free-wheel diode 5 can flow for a short time but there is no need to employ a long rest period, so deterioration of control quality (for example waveform deterioration) of the power conversion device generated by the rest periods when ON/OFF of the set of a pair of main circuit switching elements 4 u , 4 x that turn ON/OFF in a complementary relationship is changed over can be suppressed.
  • control quality for example waveform deterioration
  • the main circuit current also passes through the reverse voltage application circuit 7 , also increasing the loss due to the main circuit current; it is therefore desirable that reverse recovery of the free-wheel diode 5 should be completed as rapidly as possible and this demand can also be achieved.
  • the low-voltage DC voltage power source 8 need only be a low current capacity power source, enabling internal generation of heat by the low-voltage DC voltage power source 8 to be alleviated.
  • FIG. 7 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a second embodiment of the present invention.
  • the low-voltage DC voltage power source 8 is arranged to be employed as a drive power source of the main circuit switching elements 4 .
  • the base drive circuit 9 of a main current switching element 4 comprises a gate drive amplifier 27 and gate resistance 19 ; the gate drive amplifier 27 obtains power from the low-voltage DC voltage power source 8 and inputs this to the gate terminal of the main circuit switching element 4 as a gate drive signal of the main circuit switching elements 4 through the gate resistance 19 .
  • FIG. 7 shows the case where a resistor is employed as the current suppression circuit 10 .
  • the impulse-form current from the low-voltage DC voltage power source 8 that accompanies reverse recovery in the free-wheel diode 5 ceases to flow and voltage fluctuations of the low-voltage DC voltage power source 8 become extremely small even during reverse recovery of the free-wheel diode 5 .
  • voltage fluctuations of the low-voltage DC voltage power source 8 become small and its voltage is thus stabilized, even though power is supplied to the base drive circuit 9 of the main circuit switching elements 4 , adverse effects such as power source voltage fluctuations during reverse recovery of the free-wheel diode 5 can be prevented.
  • simplification of the circuit can be achieved by sharing of the power of the low-voltage DC voltage power source 8 and power source of the base drive circuit 9 .
  • FIG. 8 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a third embodiment of the present invention.
  • a reverse voltage application circuit 7 is provided only for the main circuit switching elements 4 x to 4 z on the side that is connected with the negative side of the DC power source.
  • FIG. 8 shows the power conversion device in the case where this is used as a three-phase inverter.
  • the positive side DC bus 1 a and negative side DC bus 1 b extend from the DC voltage source 1 , IGBTs (Insulated Gate Bipolar Transistor) are employed for the positive side main circuit switching elements 4 u to 4 w between the positive side DC bus 1 a and negative side DC bus 1 b , and MOSFETs are employed for the negative side main circuit switching elements 4 x to 4 z.
  • IGBTs Insulated Gate Bipolar Transistor
  • MOSFETs Metal Oxide Semiconductor Field-Effect Transistor
  • IGBTs that do not incorporate free-wheel diodes 5 u to 5 w
  • free-wheel diodes 5 u to 5 w which have a short reverse recovery time and little reverse recovery loss are connected in parallel with the positive side main circuit switching elements 4 u to 4 w . Consequently, the positive side main circuit switching elements 4 u to 4 w do not need to have a reverse voltage application circuit 7 .
  • a reverse voltage application circuit 7 is connected with the negative side main circuit switching elements 4 x to 4 z , no reverse voltage application circuit 7 is connected with the positive side main circuit switching element 4 u .
  • the reverse voltage application circuits 7 of the negative side main switching elements 4 x to 4 z only a single low-voltage DC voltage power source 8 is used in common for the circuits of the three phases. This is because the power line of the reverse voltage application circuits 7 on one side of the x phase to z phase can be shared with the negative side DC bus 1 b of the DC voltage source 1 .
  • reverse voltage application circuits 7 are employed only for the negative side main circuit switching elements 4 x to 4 z , it is unnecessary to provide low-voltage DC voltage power sources 8 for each phase of the three-phase circuit: a single shared low-voltage DC voltage power source 8 is sufficient for the respective phases. Also, since only a single low-voltage DC voltage power source 8 need be provided, simplification of the circuit can be achieved.
  • FIG. 9 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a fourth embodiment of present invention.
  • a rate of voltage change suppression circuit 20 that regulates the voltage of the drive signal of the main circuit switching element 4 is provided in order to suppress abrupt time-wise variation of the output voltage of the main circuit switching elements 4 .
  • the rate of voltage change suppression circuit 20 is constituted by connecting in series a rate of voltage change suppression capacitor 21 and rate of voltage change suppression resistor 22 and is connected between the drain terminal of the main circuit switching element 4 and gate terminal of the main circuit switching element 4 .
  • the free-wheel diode 5 is abruptly turned OFF by the action of the reverse current application circuit 7 . Consequently, the rate of time-wise change of the drain-source voltage of the main circuit switching elements 4 becomes large. Consequently, when the drain voltage of the main circuit switching element 4 abruptly starts to drop, the gate voltage of the main circuit switching element 4 is lowered by the action of the rate of voltage change suppression circuit 20 and, as a result, the speed of turning OFF of the main switching element is moderated.
  • FIG. 10 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a fifth embodiment of the present invention.
  • MOSFETs designed giving priority to low ON resistance are employed as the main circuit switching elements 4 and bipolar elements 23 are connected in parallel with these main circuit switching elements 4 .
  • These bipolar elements 23 turn ON practically simultaneously with the main circuit switching elements 4 but turn OFF somewhat earlier than the main circuit switching elements 4 turn OFF.
  • the bipolar elements 23 are connected in parallel with the main circuit switching elements 4 .
  • a gate signal delay circuit 24 distributes this to a drive signal to the main circuit switching element 4 and a base drive signal to the bipolar element 23 ; the OFF timing of the gate drive signal of the main circuit switching elements 4 is thereby delayed somewhat from the OFF timing of the base drive signal of the bipolar elements 23 .
  • the gate drive signal to the main circuit switching element 4 is input to the gate 4 of the main circuit switching element through a gate drive amplifier 27 of the base drive circuit 9 and a gate resistance 19 .
  • the base drive signal to the bipolar element 23 is input to the bipolar element 23 through a gate drive amplifier 28 and gate resistance 26 of the base drive circuit 25 .
  • FIG. 11 shows the gradient curve of the ON resistance and reverse recovery time of a typical power MOSFET element characteristic.
  • FIG. 11 shows the trend that, if the MOSFET is designed such as to have a small ON resistance, the reverse recovery time is prolonged and, as a result, the losses caused by reverse recovery increase; and that contrariwise, if the MOSFET is designed so as to have a large ON resistance, the reverse recovery time is shortened, and, as a result, the losses caused by reverse recovery become small.
  • power MOSFETs that are used for the main circuit switching elements 4
  • power MOSFETs are employed that are designed giving priority to low ON resistance and bipolar elements 23 that turn ON practically simultaneously with the main circuit switching elements 4 but turn OFF somewhat earlier than the main circuit switching elements 4 turn OFF are connected in parallel therewith.
  • the chip area of the power semiconductors can be reduced and the losses generated can be decreased, so a power conversion device of high efficiency and low cost can be realized.
  • FIG. 12 is a circuit diagram of a power conversion device according to a sixth embodiment of the present invention.
  • a main circuit switching control circuit 30 that changes over both main circuit switching elements 4 u to 4 w , 4 x to 4 z when the ON condition and OFF condition of the sets of pairs of main circuit switching elements 4 u to 4 w , 4 x to 4 z are mutually changed over, with the provision of a short rest period in which both the two main circuit switching elements 4 u to 4 w , 4 x to 4 z are OFF; and a reverse voltage application switching control circuit 31 that turns ON the reverse voltage application switching element 17 during a rest period that commences from the time point where the main circuit switching elements 4 u to 4 w , 4 x to 4 z were turned OFF and that turns OFF after the lapse of a rest period.
  • Elements that are identical with elements of FIG. 3 are given the same reference symbols and overlapping description is
  • the main circuit switching control circuit 30 outputs ON/OFF instructions of the main circuit switching elements 4 u to 4 w , 4 x to 4 z : it outputs the ON/OFF instructions in a complementary relationship with the main circuit switching elements 4 u to 4 w , 4 x to 4 z constituting a set.
  • the main circuit switching control circuit 30 is shown connected solely with the main circuit switching element 4 u , but it is also connected with the other main circuit switching elements 4 v to 4 z.
  • the main circuit switching control circuit 30 for example in respect of the main circuit switching element 4 u and main circuit switching element 4 x constituting a set, outputs an ON instruction to the main circuit switching element 4 u when the main circuit switching element 4 x becomes OFF, and outputs an OFF instruction to the main circuit switching element 4 u when the main circuit switching element 4 x becomes ON.
  • a short rest period is provided in which both the main circuit switching elements 4 u , 4 x are OFF and the main circuit switching control circuit 30 changes over the main circuit switching element 4 u to the ON condition during this rest period.
  • the reverse voltage application switching control circuit 31 of the reverse voltage application circuit 7 operates the reverse voltage application circuit 7 by turning the reverse voltage application switching element 17 ON. After lapse of this rest period, the reverse voltage application switching element 17 is then turned OFF and the operation of the reverse voltage application circuit 7 is disabled. In this way, the reverse voltage application circuit 7 can be operated appropriately irrespective of the direction of the main circuit current flowing in the main circuit, and the provision of for example a detector to detect the direction of the current becomes unnecessary.
  • FIG. 13 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a sixth embodiment.
  • the DC voltage source 1 is obtained for example by rectifying three-phase AC power and smoothing using a smoothing capacitor 2 .
  • a positive side DC bus 1 a and negative side DC bus 1 b extend from the DC voltage source 1 ; between the positive side DC bus 1 a and negative side DC bus 1 b , two MOSFETs corresponding to the main circuit switching elements 4 u , 4 x are connected in series.
  • Respective free-wheel diodes 5 u , 5 x are incorporated in both this positive side main circuit switching element 4 u and negative side main circuit switching element 4 x .
  • a load terminal 11 that is connected with the load is extracted from between the positive side main circuit switching element 4 u and negative side main circuit switching element 4 x.
  • Reverse voltage application circuits 7 a , 7 b are connected between the drain terminal and source terminal of the main circuit switching elements 4 u , 4 x . Specifically, the reverse voltage application circuits 7 a , 7 b are connected between the cathode terminals of the free-wheel diodes 5 u , 5 x and the anode terminals of the free-wheel diodes 5 u , 5 x.
  • the reverse voltage application circuits 7 a , 7 b are constituted by: a series connection of auxiliary power sources 12 a , 12 b having constant voltage DC power sources 8 a , 8 b of lower voltage than the DC voltage source 1 ; reverse voltage application switching elements 17 a , 17 b of lower voltage withstanding ability than the main circuit switching elements 4 u , 4 x ; and high-speed auxiliary diodes 29 a , 29 b having a shorter reverse recovery time than the free-wheel diodes 5 u , 5 x .
  • Gate drive signals g 1 a , g 1 b of the main circuit switching elements 4 u , 4 x are input through the base drive circuits 9 a , 9 b from the main circuit switching control circuit 30 to the gate terminals of the main circuit switching elements 4 u , 4 x .
  • gate drive signals g 2 a , g 2 b of the reverse voltage application switching elements 17 are input through the base drive circuits 18 a , 18 b from the reverse voltage application switching control circuit 31 to the gate terminals of the reverse voltage application switching elements 17 a , 17 b.
  • FIG. 14 is a diagram of the gate drive signals g 1 from the main circuit switching control circuit 30 and the gate drive signals g 2 from the reverse voltage application switching control circuit 31 .
  • the gate drive signal g 1 a is the gate drive signal that is input to the gate terminal of the positive side main circuit switching element 4 u ;
  • the gate drive signal g 1 b is the gate drive signal that is input to the gate terminal of the negative side main circuit switching element 4 x ;
  • the gate drive signal g 2 b is the gate drive signal that is input to the gate terminal of the reverse voltage application switching elements 17 .
  • the potential condition of the load terminal 11 is a condition in which the load terminal 11 is connected with the positive side DC bus 1 a .
  • the potential of the drain terminal of the negative side main circuit switching element 4 x and so the potential of the cathode terminal of the negative side auxiliary diode 29 b also, is in a condition of connection with the positive side DC bus 1 a .
  • the negative side constant voltage DC voltage source 8 b has a voltage lower than that of the DC voltage source 1 , so reverse voltage is applied to the negative side auxiliary diode 29 b : thus, current cannot flow to the reverse voltage application circuit 7 b , even when the negative side reverse voltage application switching element 17 b is in an ON condition.
  • the timing with which the negative side reverse voltage application switching element 17 b is put in ON condition is somewhat too early, the negative side main circuit switching element 4 x may not have been turned completely OFF and short-circuiting may therefore occur through the auxiliary power source 12 b . It is therefore desirable that even though the voltage is lower than that of the DC voltage source 1 excess loss should not be generated. Accordingly, the timing (time-point t 2 of FIG. 14 ) with which the negative side reverse voltage application switching element 17 assumes the ON condition is made to be a timing later than the timing with which the negative side main circuit switching element 4 x is turned completely OFF.
  • the negative side free-wheel diode 5 x can be put in the OFF condition by inflow of reverse recovery current to the negative side free-wheel diode 5 x from the reverse voltage application circuit 7 b . Then, after the lapse of the rest period T, the positive side main circuit switching element 4 u goes into the ON condition, whereupon the potential condition of the load terminal 11 assumes a condition of connection with the positive side DC bus 1 a.
  • the timing of putting the negative side reverse voltage application switching element 17 b into the ON condition is made to be a timing such as is capable of ensuring the necessary time for enabling reverse recovery of the negative side free-wheel diode 5 x by the reverse recovery current from the reverse voltage application circuit 7 b.
  • the timing at which the reverse voltage application switching element 17 is put into the ON condition is problematical both if this timing is too early and if this timing is too late: the timing is therefore fixed with a view to achieving a balance of these. Also, by balancing these, the rest period T can be set to be fairly long.
  • the reverse voltage application circuit 7 can be made to operate appropriately with a uniform timing irrespective of the direction of the main circuit current (load current), so a detector or the like to detect the direction of the main circuit current is unnecessary, making it possible to simplify the control mechanism.
  • FIG. 15 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a seventh embodiment.
  • the auxiliary power sources 12 a , 12 b are provided with: low-voltage DC voltage power sources 8 a , 8 b of lower voltage than the voltage of the DC voltage source 1 ; current suppression circuits 10 a , 10 b connected in series with the low-voltage DC voltage power sources 8 a , 8 b and that suppress the main circuit current flowing in the low-voltage DC voltage power sources 8 a , 8 b during reverse recovery of the free-wheel diode; and high frequency capacitors 32 a , 32 b of low internal impedance even in the high frequency band, connected in parallel with the series circuits of the low-voltage DC voltage power sources 8 a , 8 b and current suppression circuits 10 a , 10 b.
  • the auxiliary power sources 12 a , 12 b are constituted by series connection of: low-voltage DC voltage power sources 8 a , 8 b whose voltage is lower than about 1 ⁇ 4 of the voltage of the DC voltage source 1 ; resistors constituting current suppression circuits 10 a , 10 b ; and high frequency capacitors 32 a , 32 b of low internal impedance even in the high frequency band.
  • the high frequency capacitors 32 a , 32 b are not constructed by smoothing electrolytic capacitors but, instead, high frequency capacitors such as ceramic capacitors or film capacitors are employed.
  • the resistors constituting the current suppression circuits 10 a , 10 b there may be substituted wiring resistance such as for example copper foil pattern wiring resistance of a printed circuit board, or copper wire or copper sheet. Also, they may be replaced by a constant current circuit as shown in FIG. 6 . In the layout of FIG.
  • the discharge path linking the high-frequency capacitors 32 a , 32 b , reverse voltage application switching elements 17 a , 17 b , auxiliary diodes 29 a , 29 b and free-wheel diodes 5 u , 5 x is wired to be as short as possible, so as to reduce impedance.
  • the action of the current suppression circuits 10 a , 10 b is also assisted by the fact that a current of a more uniform waveform flows in the low-voltage DC voltage power sources 8 a , 8 b , rather than such an impulse-form current flowing directly in the low-voltage DC voltage power sources 8 a , 8 b.
  • the current that is necessary for reverse recovery of the free-wheel diodes 5 u , 5 x can flow for a short time but there is no need to employ a long rest period, so for example deterioration of control quality (waveform deterioration) of the power conversion device generated by the rest periods can be suppressed.
  • the main circuit current load current
  • the main circuit current also passes through the reverse voltage application circuit 7 , also increasing the loss due to the main circuit current; it is therefore desirable that reverse recovery of the free-wheel diodes 5 u , 5 x should be finished as rapidly as possible and this demand can also be achieved.
  • the low-voltage DC voltage power sources 8 a , 8 b need only be low current capacity power sources, enabling internal generation of heat by the low-voltage DC voltage power sources 8 a , 8 b to be alleviated.
  • FIG. 16 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to an eighth embodiment of the present invention.
  • a low-voltage DC voltage power source 8 is employed as the drive power source of the main circuit switching element 4 .
  • the base drive circuit 9 of the main circuit switching element 4 comprises a gate drive amplifier 27 and gate resistance 19 ; the gate drive amplifier 27 obtains power from the low-voltage DC voltage power source 8 and inputs this to the gate terminal of the main circuit switching element 4 as a gate drive signal of the main circuit switching element 4 , through the gate resistance 19 .
  • FIG. 16 shows the case where a resistor is employed as the current suppression circuit 10 .
  • the main circuit switching control circuit 30 controls on/off of the main circuit switching element 4 by outputting an ON/OFF instruction to the gate drive amplifier 27 of the base drive circuit 9 , and the reverse voltage application switching control circuit 31 outputs an ON/OFF instruction to the reverse voltage application switching element 17 through the base drive circuit 18 .
  • stabilization is effected by reducing voltage fluctuation of the low-voltage DC voltage power sources 8 a , 8 b , so even though power is supplied to the base drive circuit 9 of the main circuit switching element 4 , adverse effects such as power source voltage fluctuations during reverse recovery of the free-wheel diode 5 can be prevented. Also, thanks to the power source sharing of the low-voltage DC voltage power source 8 and the power source of the base drive circuit 9 , simplification of the circuit can be achieved.
  • FIG. 17 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a ninth embodiment of the present invention.
  • the drive power source of the reverse voltage application switching element 17 is arranged to be supplied by a bootstrap circuit 33 from the drive power source of the main circuit switching element 4 .
  • the bootstrap circuit 18 of the reverse voltage application switching element 17 comprises a gate drive amplifier 34 and gate resistance 35 ; power is obtained by the bootstrap circuit 33 from the low-voltage DC voltage power source 8 .
  • the bootstrap circuit 33 comprises a bootstrap diode 36 and a bootstrap capacitor 37 .
  • the bootstrap circuit 18 of the reverse voltage application switching element 17 obtains power by means of the bootstrap circuit 33 and outputs this to the gate terminal of the reverse voltage application switching element 17 as the gate drive signal of the reverse voltage application switching element 17 .
  • a negative electrode charging loop positive terminal of the low-voltage DC voltage power source 8 ⁇ bootstrap diode 36 ⁇ bootstrap capacitor 37 ⁇ auxiliary diode 29 ⁇ main circuit switching element 4 ⁇ low-voltage DC voltage power source 8 is formed, and the bootstrap capacitor 37 is thereby charged from the low-voltage DC voltage power source 8 .
  • the power that is charged on this bootstrap capacitor 37 is employed as the drive power source of the reverse voltage application switching element 17 .
  • the power source of the base drive circuit 18 of the reverse voltage application switching element 17 can be obtained without providing a separate isolated power source, so circuit simplification can be achieved.
  • FIG. 18 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a tenth embodiment of the present invention.
  • the drive signal of the reverse voltage application switching element 17 is supplied through a pulse transformer 38 .
  • the reverse voltage application switching control circuit 31 supplies a gate drive signal to the reverse voltage application switching element 17 through the pulse transformer 38 .
  • the reverse voltage application switching element gate drive signal g 2 drives the gate of the reverse voltage application switching element 17 while being isolated by the pulse transformer 38 .
  • the gate drive signal can be isolated merely by a single pulse transformer 38 , a dedicated power source for the gate drive amplifier is unnecessary. Consequently, drive can be achieved by the same power source as the gate drive signal of the other phases with a constant control potential, thereby making it possible to achieve circuit simplification.
  • FIG. 19 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to an eleventh embodiment of the present invention.
  • the pulse width of the drive source signal G that is supplied to the main circuit switching elements 4 u , 4 x and that is output from the control circuit 39 is arranged to be longer than the short rest period for which both main circuit switching elements 4 u , 4 x are OFF.
  • the drive source signal G of the main circuit switching elements 4 u , 4 x that is generated from the control circuit 39 usually has a PWM waveform.
  • the control circuit 39 outputs a drive source signal G whose pulse width is longer than the rest period for which both the main circuit switching elements 4 u , 4 x are turned OFF. This is in order to prevent pulse loss of the gate drive signal g 1 a of the positive side main circuit switching element 4 u.
  • FIG. 20A and FIG. 20B are diagrams of pulse loss of the gate drive signal g 1 a of the positive side main circuit switching element 4 u .
  • the gate drive signal g 1 a of the positive side main circuit switching element 4 u is formed as a signal wherein the rise time of the drive source signal G is delayed by the rest period T and the gate drive signal g 1 b of the negative side main circuit switching element 4 x is formed as a signal wherein the rise time of the waveform obtained by inverting ON and OFF of the drive source signal G is delayed by the amount of the rest period.
  • the current is automatically cut off by reverse biasing of the negative side auxiliary diode 29 b by the turning ON of the positive side main circuit switching element 4 u .
  • the negative side reverse voltage application switching element 4 x is turned off by its own cut-off capability, so the switching loss and/or surge voltage during turn-off of the negative side reverse voltage application switching element 4 x increases and, as a result, for the reverse voltage application switching element 17 b , a high performance element must be selected. Accordingly, in the eleventh embodiment, it is arranged that pulses should not be emitted whose pulse width is narrower than this rest period.
  • no drive source signal G of pulse width shorter than the rest period T is output by the control device 39 , so pulse loss of the gate drive signal g 1 a of the positive side main circuit switching element 4 u can be prevented. Consequently, by reverse biasing the auxiliary diode 29 b , the current of the reverse voltage application switching element 17 b is automatically cut off, with the result that it is no longer necessary to select an element of high performance for the reverse voltage application switching element 17 b.
  • FIG. 21 is a circuit diagram of major parts of a reverse voltage application circuit 7 in the power conversion device according to a twelfth embodiment of the present invention.
  • a reverse voltage application circuit 7 is only provided in respect of the main circuit switching elements 4 x to 4 z on the side that is connected with the negative side of the DC power source.
  • FIG. 21 shows a power conversion device in the case where this is used as a three-phase inverter.
  • a positive side DC bus 1 a and negative side DC bus 1 b extend from the DC voltage source 1 and IGBTs are employed for the positive side main circuit switching elements 4 u to 4 w between the positive side DC bus 1 a and negative side DC bus 1 b : MOSFETs are employed for the negative side main circuit switching elements 4 x to 4 z.
  • MOSFETs incorporating free-wheel diodes 5 x to 5 z are employed for the negative side main circuit switching elements 4 x to 4 z
  • IGBTs that do not incorporate free-wheel diodes 5 u to 5 w
  • free-wheel diodes 5 u to 5 w which have a short reverse recovery time and little reverse recovery loss are therefore connected in parallel with the positive side main circuit switching elements 4 u to 4 w . Consequently, a reverse voltage application circuit 7 is not needed for the positive side main circuit switching elements 4 u to 4 w.
  • reverse voltage application circuits 7 x to 7 z are connected with the negative side main circuit switching elements 4 x to 4 z , no reverse voltage application circuit 7 is connected with the positive side main circuit switching element 4 u .
  • Only one low-voltage DC voltage power source 8 of the reverse voltage application circuits 7 x to 7 z of the negative side main circuit switching elements 4 x to 4 z is employed in common in a three-phase circuit. This is because the power line on one side of the reverse voltage application circuit 7 of the x phase to z phase can be shared with the negative side DC bus 1 b of the DC voltage source 1 .
  • reverse voltage application circuits 7 x to 7 z are only employed for the negative side main circuit switching elements 4 x to 4 z , so it is not necessary to provide a low-voltage DC voltage power source 8 for each phase in the case where a three-phase circuit is employed, and a single low-voltage DC voltage power source 8 shared with all the phases is sufficient. Also, since only a single low-voltage DC voltage power source 8 is sufficient, circuit simplification can be achieved.
  • FIG. 22 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a thirteenth embodiment of the present invention.
  • a voltage rate of change suppression circuit 20 is provided that regulates the voltage of the drive signal of the main circuit switching elements 4 such as to suppress abrupt time-wise variation of the output voltage of the main circuit switching elements 4 .
  • the voltage rate of change suppression circuit 20 comprises a series connection of a voltage rate of change suppression capacitor 21 and a voltage rate of change suppression resistor 22 and is connected between the drain terminal of a main circuit switching element 4 and the gate terminal of a main circuit switching element 4 .
  • the free-wheel diode 5 In reverse recovery of the free-wheel diodes 5 , the free-wheel diode 5 is abruptly turned OFF by the action of the reverse voltage application circuit 7 . Consequently, the time-wise rate of change of the drain/source of voltage of the main circuit switching elements 4 becomes large. Accordingly, when the drain voltage of the main circuit switching element 4 commences to fall abruptly, the gate voltage of the main circuit switching element 4 is lowered by the action of the voltage rate of change suppression circuit 20 , and, as a result, the rate of turning ON of the main switching element is moderated.
  • FIG. 23 is a circuit diagram of major parts of a reverse voltage application circuit 7 in a power conversion device according to a fourteenth embodiment of the present invention.
  • MOSFETs designed giving priority to low ON resistance are employed as the main circuit switching elements 4 and bipolar elements 23 are connected in parallel with the main circuit switching elements 4 .
  • These bipolar elements 23 are turned ON practically simultaneously with the main circuit switching elements 4 , and are turned OFF somewhat earlier than the turning OFF of the main circuit switching elements 4 .
  • the bipolar elements 23 are connected in parallel with the main circuit switching elements 4 .
  • a gate signal delay circuit 24 receives the original gate drive signal from the main circuit switching control circuit 30 , and distributes this to the gate drive signal to the main circuit switching element 4 and the base drive signal to the bipolar element 23 ; the OFF timing of the gate drive signal of the main circuit switching element 4 is somewhat delayed from the OFF timing of the base drive signal of the bipolar element 23 .
  • the gate drive signal to the main circuit switching element 4 is input to the main circuit switching element 4 through a gate drive amplifier 27 and gate resistance 19 of the base drive circuit 9 .
  • the base drive signal to the bipolar element 23 is input to the bipolar element 23 through the gate drive amplifier 28 and gate resistance 26 of the base drive circuit 25 .
  • FIG. 11 shows the gradient curve of the ON resistance and reverse recovery time of an ordinary power MOSFET element characteristic.
  • This Figure displays the trend that, if the MOSFET is designed as such that the ON resistance is small, the reverse recovery time becomes long and, as a result, loss caused by reverse recovery becomes large; contrariwise, if the MOSFET is designed such that the ON resistance is large, the reverse recovery time becomes short and, as a result, loss caused by reverse recovery becomes small.
  • power MOSFETs that are used for the main circuit switching elements 4
  • power MOSFETs are employed that are designed giving priority to low ON resistance and bipolar elements 23 that turn ON practically simultaneously with the main circuit switching elements 4 but turn OFF somewhat earlier than the main circuit switching elements 4 turn OFF are connected in parallel therewith.
  • the chip area of the power semiconductors can be reduced and the losses generated can be decreased, so a power conversion device of high efficiency and low cost can be realized.
  • the main circuit current flowing to the reverse voltage application circuit during reverse recovery of the free-wheel diodes flows through a high-frequency capacitor of the reverse voltage application circuit, so the current required for reverse recovery of the free-wheel diode can flow in a short time, making it unnecessary to employ a longer rest period. Consequently, for example deterioration of control quality (waveform deterioration) of the power conversion device produced by this rest period can also be suppressed.
  • the reverse voltage application circuit can be made to operate appropriately with a uniform timing irrespective of the direction of the main circuit current, so for example a detector to detect the direction of the current becomes unnecessary, making possible simplification of the control mechanism.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Stand-By Power Supply Arrangements (AREA)
US11/719,359 2004-11-15 2005-11-15 Power converter Active 2026-11-17 US7724556B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004330069A JP4212546B2 (ja) 2004-11-15 2004-11-15 電力変換装置
JP2004330070A JP4204534B2 (ja) 2004-11-15 2004-11-15 電力変換装置
JP2004-330069 2004-11-15
JP2004-330070 2004-11-15
PCT/JP2005/021320 WO2006052032A1 (ja) 2004-11-15 2005-11-15 電力変換装置

Publications (2)

Publication Number Publication Date
US20080253158A1 US20080253158A1 (en) 2008-10-16
US7724556B2 true US7724556B2 (en) 2010-05-25

Family

ID=36336684

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/719,359 Active 2026-11-17 US7724556B2 (en) 2004-11-15 2005-11-15 Power converter

Country Status (5)

Country Link
US (1) US7724556B2 (de)
EP (1) EP1814216B1 (de)
KR (1) KR100936427B1 (de)
TW (1) TW200631296A (de)
WO (1) WO2006052032A1 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120206190A1 (en) * 2011-02-15 2012-08-16 Kubushiki Kaisha Toshiba Semiconductor device
US8896365B2 (en) 2011-02-15 2014-11-25 Kabushiki Kaisha Toshiba Semiconductor switch having reverse voltage application circuit and power supply device including the same
US20180083551A1 (en) * 2016-09-16 2018-03-22 Kabushiki Kaisha Toshiba Power conversion device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4772542B2 (ja) * 2006-03-15 2011-09-14 株式会社東芝 電力変換装置
US7920396B2 (en) 2007-07-13 2011-04-05 National Semiconductor Corporation Synchronous rectifier and controller for inductive coupling
KR101379157B1 (ko) * 2009-08-26 2014-03-28 파나소닉 주식회사 부하 제어 장치
US8279619B2 (en) * 2010-03-25 2012-10-02 Hewlett-Packard Development Company, L.P. Point of load (POL) power supply systems with replacement module
ITTO20100822A1 (it) * 2010-10-06 2012-04-07 Et99 S R L Celle di commutazione a transistori mosfet di potenza
ITTO20110280A1 (it) * 2011-03-29 2012-09-30 Et99 S R L Celle di commutazione a transistori mosfet di potenza
TWI426690B (zh) * 2011-05-06 2014-02-11 Univ Nat Taiwan 電源轉換切換電路
JP5932269B2 (ja) * 2011-09-08 2016-06-08 株式会社東芝 パワー半導体モジュール及びパワー半導体モジュールの駆動方法
JP5639978B2 (ja) * 2011-09-27 2014-12-10 日立オートモティブシステムズ株式会社 自動車用電力変換制御装置
JP5838977B2 (ja) 2013-01-21 2016-01-06 株式会社デンソー 交流直流変換回路
US10084310B1 (en) * 2016-02-08 2018-09-25 National Technology & Engineering Solutions Of Sandia, Llc Low-inductance direct current power bus
CN108990220A (zh) * 2018-09-19 2018-12-11 矽力杰半导体技术(杭州)有限公司 一种led驱动电路
WO2020070850A1 (ja) * 2018-10-04 2020-04-09 日立ジョンソンコントロールズ空調株式会社 電力変換回路および空気調和機
WO2020090068A1 (ja) * 2018-10-31 2020-05-07 日立ジョンソンコントロールズ空調株式会社 電力変換装置、及び、これを備える空気調和機
JP2021061703A (ja) * 2019-10-08 2021-04-15 シャープ株式会社 補助電源回路、電源装置、および電源回路

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414479A (en) * 1981-07-14 1983-11-08 General Electric Company Low dissipation snubber for switching power transistors
US4570213A (en) * 1983-07-05 1986-02-11 Institut Cerac S.A. Static converter switch with fast recovery freewheel diode
US5025360A (en) * 1989-12-20 1991-06-18 Sundstrand Corporation Inverter switch with parallel free-wheel diodes
US5450306A (en) * 1992-12-07 1995-09-12 Square D Company Closed loop pulse width modulator inverter with volt-seconds feedback control
JPH10327585A (ja) 1997-05-23 1998-12-08 Toshiba Corp 電力変換装置
US20030107905A1 (en) 2001-12-06 2003-06-12 Shoji Miura Load drive circuit using flywheel diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237513A (ja) * 1985-04-12 1986-10-22 Mitsubishi Electric Corp 電界効果型トランジスタの駆動回路
TW301081B (de) * 1995-08-02 1997-03-21 Hitachi Ltd
GB2328565B (en) * 1997-03-18 2001-08-29 Mitsubishi Electric Corp Power converting apparatus
EP2317637B1 (de) * 2001-10-19 2012-09-12 STMicroelectronics Srl Schaltungvorrichtung zur Steuerung einer elektrischen Wechselstromlast

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414479A (en) * 1981-07-14 1983-11-08 General Electric Company Low dissipation snubber for switching power transistors
US4570213A (en) * 1983-07-05 1986-02-11 Institut Cerac S.A. Static converter switch with fast recovery freewheel diode
US5025360A (en) * 1989-12-20 1991-06-18 Sundstrand Corporation Inverter switch with parallel free-wheel diodes
US5450306A (en) * 1992-12-07 1995-09-12 Square D Company Closed loop pulse width modulator inverter with volt-seconds feedback control
JPH10327585A (ja) 1997-05-23 1998-12-08 Toshiba Corp 電力変換装置
US6058037A (en) * 1997-05-23 2000-05-02 Shibata; Hisanori Power conversion device
US20030107905A1 (en) 2001-12-06 2003-06-12 Shoji Miura Load drive circuit using flywheel diode
JP2003235240A (ja) 2001-12-06 2003-08-22 Denso Corp 還流ダイオードおよび負荷駆動回路
US6829152B2 (en) 2001-12-06 2004-12-07 Denso Corporation Load drive circuit using flywheel diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120206190A1 (en) * 2011-02-15 2012-08-16 Kubushiki Kaisha Toshiba Semiconductor device
US8896365B2 (en) 2011-02-15 2014-11-25 Kabushiki Kaisha Toshiba Semiconductor switch having reverse voltage application circuit and power supply device including the same
US20180083551A1 (en) * 2016-09-16 2018-03-22 Kabushiki Kaisha Toshiba Power conversion device
US10224832B2 (en) * 2016-09-16 2019-03-05 Kabushiki Kaisha Toshiba Power conversion device

Also Published As

Publication number Publication date
US20080253158A1 (en) 2008-10-16
TW200631296A (en) 2006-09-01
KR20070064654A (ko) 2007-06-21
EP1814216B1 (de) 2018-09-05
EP1814216A1 (de) 2007-08-01
TWI311850B (de) 2009-07-01
EP1814216A4 (de) 2011-04-20
KR100936427B1 (ko) 2010-01-12
WO2006052032A1 (ja) 2006-05-18

Similar Documents

Publication Publication Date Title
US7724556B2 (en) Power converter
US10211719B2 (en) Power converter
US7830036B2 (en) Power electronic module pre-charge system and method
US8089780B2 (en) Semiconductor switch and power conversion system provided with semiconductor switch
JP5260957B2 (ja) 電力変換装置
KR101853600B1 (ko) 충전 공용 인버터
JP2011152011A (ja) 半導体装置及びそれを用いた電源装置
JP2003052178A (ja) ３レベルインバータ装置
JP2012070505A (ja) Ｄｃ−ｄｃコンバータ
JP2002281761A (ja) 半導体電力変換装置
JP2009011013A (ja) 電力変換装置
JP4204534B2 (ja) 電力変換装置
JP5929277B2 (ja) ３レベル電力変換装置
JP4212546B2 (ja) 電力変換装置
JP2017017839A (ja) 半導体装置
JP2015033222A (ja) 半導体素子の駆動装置およびそれを用いる電力変換装置
CN101183835A (zh) 电压产生电路
JP6705234B2 (ja) インバータ装置の制御方法
JP2003033029A (ja) Ｄｃ−ｄｃコンバータ
JP3495295B2 (ja) Ｄｃ−ｄｃコンバータ
US11658563B2 (en) Half-bridge power supply with dynamic dead time
US11863070B2 (en) DC/DC converter and network feedback unit
JP5440972B2 (ja) 電力変換装置
CN111615783B (zh) 半导体元件的驱动电路、半导体元件的驱动方法以及马达控制装置
JPH10337044A (ja) 電力変換装置

Legal Events

Date Code Title Description
AS Assignment

Owner name: KABUSHIKI KAISHA TOSHIBA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MOCHIKAWA, HIROSHI;KOYAMA, TATEO;REEL/FRAME:019620/0271

Effective date: 20070705

Owner name: KABUSHIKI KAISHA TOSHIBA,JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MOCHIKAWA, HIROSHI;KOYAMA, TATEO;REEL/FRAME:019620/0271

Effective date: 20070705

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552)

Year of fee payment: 8

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 12