US7217624B2 - Non-volatile memory device with conductive sidewall spacer and method for fabricating the same - Google Patents
Non-volatile memory device with conductive sidewall spacer and method for fabricating the same Download PDFInfo
- Publication number
- US7217624B2 US7217624B2 US11/024,472 US2447204A US7217624B2 US 7217624 B2 US7217624 B2 US 7217624B2 US 2447204 A US2447204 A US 2447204A US 7217624 B2 US7217624 B2 US 7217624B2
- Authority
- US
- United States
- Prior art keywords
- pair
- sidewall spacers
- gate
- conductive
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
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- 239000010936 titanium Substances 0.000 claims description 7
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- 238000009331 sowing Methods 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/790,957 US7667253B2 (en) | 2004-10-01 | 2007-04-30 | Non-volatile memory device with conductive sidewall spacer and method for fabricating the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040078223A KR100650369B1 (ko) | 2004-10-01 | 2004-10-01 | 폴리실리콘부유측벽을 갖는 비휘발성메모리장치 및 그제조 방법 |
| KR2004-78223 | 2004-10-01 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/790,957 Division US7667253B2 (en) | 2004-10-01 | 2007-04-30 | Non-volatile memory device with conductive sidewall spacer and method for fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20060073666A1 US20060073666A1 (en) | 2006-04-06 |
| US7217624B2 true US7217624B2 (en) | 2007-05-15 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/024,472 Expired - Fee Related US7217624B2 (en) | 2004-10-01 | 2004-12-30 | Non-volatile memory device with conductive sidewall spacer and method for fabricating the same |
| US11/790,957 Expired - Fee Related US7667253B2 (en) | 2004-10-01 | 2007-04-30 | Non-volatile memory device with conductive sidewall spacer and method for fabricating the same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/790,957 Expired - Fee Related US7667253B2 (en) | 2004-10-01 | 2007-04-30 | Non-volatile memory device with conductive sidewall spacer and method for fabricating the same |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7217624B2 (ko) |
| JP (2) | JP2006108620A (ko) |
| KR (1) | KR100650369B1 (ko) |
| DE (1) | DE102004063690B4 (ko) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060128077A1 (en) * | 2004-12-15 | 2006-06-15 | Dongbu-Anam Semiconductor | Thin film transistor and method for manufacturing the same |
| US20060154421A1 (en) * | 2005-01-12 | 2006-07-13 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device having notched gate MOSFET |
| US20080123435A1 (en) * | 2006-07-10 | 2008-05-29 | Macronix International Co., Ltd. | Operation of Nonvolatile Memory Having Modified Channel Region Interface |
| US20110211394A1 (en) * | 2010-02-26 | 2011-09-01 | Thilo Scheiper | Field effect transistors for a flash memory comprising a self-aligned charge storage region |
| US20120049248A1 (en) * | 2010-08-31 | 2012-03-01 | Micron Technology, Inc. | Transistors having a control gate and one or more conductive structures |
| US20150221752A1 (en) * | 2012-07-12 | 2015-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Memory Device |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100583609B1 (ko) * | 2004-07-05 | 2006-05-26 | 삼성전자주식회사 | 반도체 장치의 게이트 구조물 제조방법 및 이를 이용한불휘발성 메모리 장치의 셀 게이트 구조물 제조방법 |
| JP2007180482A (ja) * | 2005-12-28 | 2007-07-12 | Hynix Semiconductor Inc | フラッシュメモリ素子の製造方法 |
| US7453127B2 (en) * | 2006-02-13 | 2008-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double-diffused-drain MOS device with floating non-insulator spacers |
| US7598572B2 (en) * | 2006-10-25 | 2009-10-06 | International Business Machines Corporation | Silicided polysilicon spacer for enhanced contact area |
| KR101137949B1 (ko) * | 2006-10-31 | 2012-05-10 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
| KR100799113B1 (ko) * | 2007-02-26 | 2008-01-29 | 주식회사 하이닉스반도체 | 비휘발성 메모리 셀 제조방법 |
| JP2009054707A (ja) * | 2007-08-24 | 2009-03-12 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
| JP5521555B2 (ja) * | 2008-02-20 | 2014-06-18 | 日本電気株式会社 | 不揮発性記憶装置およびその製造方法 |
| US8716095B2 (en) * | 2010-06-03 | 2014-05-06 | Institute of Microelectronics, Chinese Academy of Sciences | Manufacturing method of gate stack and semiconductor device |
| CN102347277B (zh) * | 2010-07-30 | 2014-02-12 | 中国科学院微电子研究所 | 半导体器件结构及其制作方法 |
| US9711612B2 (en) | 2010-07-30 | 2017-07-18 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device structure and method for fabricating the same |
| CN102881634B (zh) * | 2011-07-15 | 2014-10-29 | 中国科学院微电子研究所 | 半导体器件结构及其制作方法 |
| US9293377B2 (en) | 2011-07-15 | 2016-03-22 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device structure and method for manufacturing the same |
| JP2013069751A (ja) * | 2011-09-21 | 2013-04-18 | Toshiba Corp | 不揮発性半導体記憶装置、及びその製造方法 |
| CN103378117B (zh) * | 2012-04-25 | 2016-08-03 | 台湾积体电路制造股份有限公司 | 具有负电荷层的背照式图像传感器 |
| US9659981B2 (en) | 2012-04-25 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside illuminated image sensor with negatively charged layer |
| US9660106B2 (en) * | 2014-08-18 | 2017-05-23 | United Microelectronics Corp. | Flash memory and method of manufacturing the same |
| US20160190338A1 (en) * | 2014-12-26 | 2016-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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| US6140171A (en) * | 1999-01-20 | 2000-10-31 | International Business Machines Corporation | FET device containing a conducting sidewall spacer for local interconnect and method for its fabrication |
| KR20020019139A (ko) | 2000-09-05 | 2002-03-12 | 황인길 | 반도체 소자 및 그 제조 방법 |
| US6528404B2 (en) * | 2000-01-25 | 2003-03-04 | Hyundai Electronics Industries Co., Ltd. | Semiconductor device and fabrication method thereof |
| US20050218445A1 (en) * | 2002-05-08 | 2005-10-06 | Koninklijke Philips Electronics N.V. | Floating gate memory cells with increased coupling radio |
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| JPS6435962A (en) * | 1987-07-31 | 1989-02-07 | Hitachi Ltd | Nonvolatile memory |
| JPH03177075A (ja) * | 1989-12-06 | 1991-08-01 | Kawasaki Steel Corp | 不揮発性半導体記憶装置 |
| FR2718289B1 (fr) * | 1994-03-30 | 1996-08-02 | Sgs Thomson Microelectronics | Cellule mémoire électriquement programmable. |
| JP2663887B2 (ja) * | 1994-11-29 | 1997-10-15 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| US5760435A (en) * | 1996-04-22 | 1998-06-02 | Chartered Semiconductor Manufacturing, Ltd. | Use of spacers as floating gates in EEPROM with doubled storage efficiency |
| FR2757307B1 (fr) * | 1996-12-13 | 1999-02-26 | Sgs Thomson Microelectronics | Cellule memoire a quatre etats |
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| JP3334587B2 (ja) * | 1997-12-16 | 2002-10-15 | 日産自動車株式会社 | ハイブリッド電気自動車 |
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| FR2776830B1 (fr) * | 1998-03-26 | 2001-11-23 | Sgs Thomson Microelectronics | Cellule memoire electriquement programmable |
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- 2004-12-28 DE DE102004063690A patent/DE102004063690B4/de not_active Expired - Fee Related
- 2004-12-30 US US11/024,472 patent/US7217624B2/en not_active Expired - Fee Related
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| US7507611B2 (en) * | 2004-12-15 | 2009-03-24 | Dongbu Electronics Co., Ltd. | Thin film transistor and method for manufacturing the same |
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| US8044451B2 (en) | 2005-01-12 | 2011-10-25 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device having notched gate MOSFET |
| US20060154421A1 (en) * | 2005-01-12 | 2006-07-13 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device having notched gate MOSFET |
| US20060154410A1 (en) * | 2005-01-12 | 2006-07-13 | Samsung Electronics Co., Ltd. | Transistor having gate dielectric layer of partial thickness difference and method of fabricating the same |
| US7419879B2 (en) * | 2005-01-12 | 2008-09-02 | Samsung Electronics Co., Ltd. | Transistor having gate dielectric layer of partial thickness difference and method of fabricating the same |
| US20080283879A1 (en) * | 2005-01-12 | 2008-11-20 | Samsung Electronics Co., Ltd. | Transistor having gate dielectric layer of partial thickness difference and method of fabricating the same |
| US20090267137A1 (en) * | 2005-01-12 | 2009-10-29 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device having notched gate mosfet |
| US20080123435A1 (en) * | 2006-07-10 | 2008-05-29 | Macronix International Co., Ltd. | Operation of Nonvolatile Memory Having Modified Channel Region Interface |
| US20110211394A1 (en) * | 2010-02-26 | 2011-09-01 | Thilo Scheiper | Field effect transistors for a flash memory comprising a self-aligned charge storage region |
| US8507348B2 (en) | 2010-02-26 | 2013-08-13 | Globalfoundries Inc. | Field effect transistors for a flash memory comprising a self-aligned charge storage region |
| US9054207B2 (en) | 2010-02-26 | 2015-06-09 | Globalfoundries Inc. | Field effect transistors for a flash memory comprising a self-aligned charge storage region |
| US20120049248A1 (en) * | 2010-08-31 | 2012-03-01 | Micron Technology, Inc. | Transistors having a control gate and one or more conductive structures |
| US8969928B2 (en) * | 2010-08-31 | 2015-03-03 | Micron Technology, Inc. | Transistors having a control gate and one or more conductive structures |
| US20150221752A1 (en) * | 2012-07-12 | 2015-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Memory Device |
| US10164073B2 (en) * | 2012-07-12 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013033984A (ja) | 2013-02-14 |
| KR20060029327A (ko) | 2006-04-06 |
| DE102004063690B4 (de) | 2010-02-11 |
| US7667253B2 (en) | 2010-02-23 |
| JP2006108620A (ja) | 2006-04-20 |
| US20060073666A1 (en) | 2006-04-06 |
| KR100650369B1 (ko) | 2006-11-27 |
| DE102004063690A1 (de) | 2006-04-06 |
| US20070200145A1 (en) | 2007-08-30 |
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