US6589354B2 - Method and apparatus for in-situ lithography mask cleaning - Google Patents

Method and apparatus for in-situ lithography mask cleaning Download PDF

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Publication number
US6589354B2
US6589354B2 US09/753,665 US75366501A US6589354B2 US 6589354 B2 US6589354 B2 US 6589354B2 US 75366501 A US75366501 A US 75366501A US 6589354 B2 US6589354 B2 US 6589354B2
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United States
Prior art keywords
reticle
mask surface
gas
cleaning
ionized
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Expired - Lifetime, expires
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US09/753,665
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English (en)
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US20020083957A1 (en
Inventor
Paul B. Reid
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ASML Holding NV
ASML US Inc
ASML US LLC
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ASML Holding NV
ASML US Inc
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Assigned to SILICON VALLEY GROUP, INC. reassignment SILICON VALLEY GROUP, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: REID, PAUL B.
Priority to US09/753,665 priority Critical patent/US6589354B2/en
Priority to JP2002563079A priority patent/JP4065200B2/ja
Priority to PCT/US2002/000098 priority patent/WO2002063396A1/en
Priority to KR1020027011536A priority patent/KR100722905B1/ko
Priority to EP02718777A priority patent/EP1259859A1/en
Publication of US20020083957A1 publication Critical patent/US20020083957A1/en
Publication of US6589354B2 publication Critical patent/US6589354B2/en
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Assigned to ASML US, LLC, ASML HOLDING N.V., ASML US, INC. reassignment ASML US, LLC CHANGE OF NAME, CONVERSION, MERGER, AND CONFIRMATORY ASSIGNMENT Assignors: ASML US, INC., ASM LITHOGRAPHY, INC. AND ASML US, LLC, ASML US, INC., SILICON VALLEY GROUP, INC.
Assigned to ASML US, INC. reassignment ASML US, INC. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: SVG LITHOGRAPHY SYSTEMS, INC.
Assigned to ASML US, INC. reassignment ASML US, INC. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: ASM LITHOGRAPHY, INC., ASML US, LLC
Assigned to ASML US, LLC reassignment ASML US, LLC CONVERSION Assignors: ASML US, INC.
Assigned to ASML HOLDING N.V. reassignment ASML HOLDING N.V. CONFIRMATORY ASSIGNMENT Assignors: ASML US, INC.
Assigned to ASML US, INC. reassignment ASML US, INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: SILICON VALLEY GROUP, INC.
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Definitions

  • the present invention relates generally to lithography systems. More particularly, this invention relates to cleaning a reticle during use in a lithography system.
  • Lithography is a process used to create features on the surface of substrates.
  • substrates can include those used in the manufacture of flat panel displays, circuit boards, various integrated circuits, and the like.
  • a frequently used substrate for such applications is a semiconductor wafer. While this description is written in terms of a semiconductor wafer for illustrative purposes, one skilled in the art would recognize that this description also applies to other types of substrates known to those skilled in the art.
  • a wafer which is disposed on a wafer stage, is exposed to an image projected onto the surface of the wafer by an exposure system located within a lithography system.
  • the exposure system includes a reticle (also called a mask) for projecting an image onto the wafer.
  • the exposure system also includes an illumination system, a projection optics system, and a wafer alignment stage.
  • Particulate contamination on the reticle can be imaged on each pattern on the wafer.
  • the reticle image produced contains a defect (the image of the particle). In many cases, this defect can cause the functional failure of every pattern on every wafer printed with the contaminated reticle.
  • the system becomes more sensitive to smaller particles. These are more difficult (or currently impossible) to detect on the reticle prior to its installation in the lithography tool. In addition, it is more difficult (if not impossible) to maintain the reticle environment clean enough to prevent the deposition of such small particles on the reticle.
  • exposure optics are used in the case of photolithography, a different type of exposure apparatus can be used depending on the particular application.
  • x-ray, ion, electron, or photon lithographies each can require a different exposure apparatus, as is known to those skilled in the art.
  • photolithography is discussed here for illustrative purposes only.
  • the projected image produces changes in the characteristics of a layer, for example photoresist, deposited on the surface of the wafer. These changes correspond to the image features projected onto the wafer during exposure. Subsequent to exposure, the layer can be etched to produce a patterned layer. The pattern corresponds to those image features projected onto the wafer during exposure. This patterned layer is then used to remove or further process exposed portions of underlying structural layers within the wafer, such as conductive, semiconductive, or insulative layers. This process is then repeated, together with other steps, until the desired features have been formed on the surface, or in various layers, of the wafer.
  • a layer for example photoresist
  • Step-and-scan technology works in conjunction with a projection optics system that has a narrow, typically rectangular imaging slot called the exposure field. Rather than expose the entire wafer at one time, individual fields are scanned onto the wafer one at a time. This is done by moving the wafer and reticle simultaneously such that the imaging slot is moved across the field during the scan. The wafer stage must then be asynchronously stepped between field exposures to allow multiple copies of the reticle pattern to be exposed over the wafer surface. In this manner, the quality of the image projected onto the wafer is maximized. While using a step-and-scan technique generally assists in improving overall image quality, image distortions generally occur in such systems due to imperfections within the projection optics system, illumination system, and the particular reticle being used.
  • An exemplary step-and-scan lithography system is the Microscan II, manufactured by Silicon Valley Group, Inc., San Jose, Calif.
  • the illumination system of a lithographic system includes a light source.
  • Excimer lasers are one such light source and operate at several characteristic wavelengths ranging from vacuum ultraviolet light to greater than 400 nanometers (nm) depending on the gas mixture used. By shortening the wavelength of the light, the resolution of the projection system is improved. Thus, in a lithography system, it is desirable to utilize a light source with wavelengths within the vacuum ultraviolet range, i.e., below 200 nm.
  • Sources of organic contamination within a lithography system include out-gassed products from polymer materials and solvents used for degreasing tool parts, for example. Extremely low levels of organic contamination are critical for the exposure path in the lithography system, and an active purge system and strict material selection are required for those areas of the system associated with this path.
  • the present invention makes practical maintaining near zero particle contamination of the mask over an extended period of time by repetitive cleaning of the mask during the actual exposure process.
  • the repeated cleaning shortens the effective amount of time that the mask is exposed to contamination, making realistic levels of environmental control (Class 1 to Class 10) consistent with a near zero particulate requirement.
  • the present invention utilizes a cleaning system in which the reticle is passed underneath a delivery device using a step and scan method.
  • the delivery device remains stationary.
  • the delivery device transports a gas, which becomes ionized before being directed onto the mask surface of the reticle.
  • the ionized gas neutralizes electro-static attraction between the mask and particulates, thereby “blowing off” the particulates.
  • the ionized gas and particulates are then transported away from the mask surface of the reticle by a contaminant collector.
  • a positive or negative charge can be applied to the contaminant collector to better promote collection of particulate contamination from the mask.
  • FIG. 1 is a diagram of an example embodiment of the cleaning apparatus of the present invention.
  • FIG. 2 is a block diagram of the cleaning apparatus of the present invention.
  • FIG. 3 is a schematic diagram of a delivery device contained in the system of the present invention.
  • FIG. 4 is a cross-sectional view of an example embodiment of the present invention.
  • FIG. 5 is a perspective view of an example embodiment of the present invention.
  • FIG. 1 is a diagram of an example embodiment of the cleaning apparatus of the present invention.
  • Reticle 110 is translated within an imaging station (not shown), where in-situ cleaning occurs.
  • An exposure field for lithography is shown at 105 .
  • the exposure field 105 which is produced by the illumination system, is stationary.
  • the reticle 110 is translated in two dimensions to step and scan across the exposure field 105 , as would be apparent to a person skilled in the relevant art.
  • a cleaning apparatus 145 is positioned in close proximity to the mask surface of the reticle 110 .
  • the cleaning apparatus 145 comprises a delivery device 130 and a contaminant collector 115 .
  • the reticle 110 As the reticle 110 is stepped and scanned to expose the wafer (not shown), the reticle 110 passes repeatedly underneath the cleaning apparatus 145 . The exposure field 105 and the cleaning apparatus 145 remain stationary.
  • the delivery device 130 directs the ionized gas 140 onto the mask surface of the reticle 110 .
  • the ionized gas 140 reduces electro-static attraction between the mask (i.e., top) surface of the reticle 110 and particulate contamination lodged thereon (not shown).
  • the ionized gas 140 is used to dislodge particulate contamination from the mask surface of the reticle 110 . As a result, particulate contamination of the reticle 110 is reduced to an acceptable level.
  • the gas is preferably nitrogen that is ionized to produce a stream of N 2 anions and electrons.
  • gases can be used.
  • “Off-the-shelf” devices that produce such an ion stream are commercially available (e.g., NRD Inc., Grand Island, N.Y.,—NuclecelTM, model 2021CR).
  • the ionized gas 140 can be produced by bombarding or otherwise exposing a gas with alpha particles produced by a radioactive isotope.
  • the radioactive isotope can be located within the cleaning apparatus 145 , or the gas can be exposed to the radioactive isotope upstream (e.g., closer to the gas source (not shown)).
  • Polonium with an atomic weight of 210 produces alpha particles.
  • the radioactive isotope Americium also produces alpha particles.
  • the ionized gas 140 can be produced by electrostatically charging a gas, using techniques that would become apparent to a person skilled in the relevant art.
  • the delivery device 130 carries the ionized gas via an internal cavity.
  • the delivery device 130 contains delivery ducts 135 .
  • the delivery ducts 135 are holes, slots, slits, or jets used to direct the ionized gas 140 onto the mask surface of the reticle 110 .
  • the size, shape, number and location of the holes, slots, slits, or jets used to deliver the ionized gas 140 will be determined by implementation requirements.
  • the contaminant collector 115 vacuums the ionized gas 140 from the mask surface of the reticle 110 after the ionized gas 140 is directed onto the mask surface of the reticle 110 to dislodge particulate contaminants from the mask surface of the reticle 110 .
  • the contaminant collector 115 contains vacuum ducts 140 .
  • the vacuum ducts 155 are holes, slots, slits, or jets used to remove particulate contaminants 150 and the ionized gas 140 from the reticle 110 .
  • the size, shape, number and location of the holes, slots, slits, or jets used to vacuum the particulate contaminants 150 and the ionized gas 140 will be determined by implementation requirements.
  • Particulate contaminants 150 and ionized gas 140 are vacuumed through the vacuum ducts 155 and are removed from the mask surface of the reticle 110 by the contaminant collector 115 .
  • the vacuum ducts 155 can be positively or negatively electrically biased to provide additional attraction of contaminants dislodged from the mask surface of the reticle.
  • the size, shape, number and location of the vacuum ducts 155 will be determined by implementation requirements.
  • the position of the delivery device 130 and the contaminant collector 115 can be reversed.
  • FIG. 2 is a generalized block diagram of the cleaning apparatus of the present invention.
  • Gas source 210 supplies a gas, such as nitrogen.
  • An ionizing source 220 is used to ionize the gas provided by gas source 210 .
  • the gas can be bombarded with alpha particles or electrostatically ionized by the ionizing source 220 .
  • the ionized gas 140 is then provided to the delivery device 130 , which directs the ionized gas 140 onto the reticle 110 . After the ionized gas 140 dislodges contaminants from the reticle 110 , the ionized gas 140 and the contaminants 150 are vacuumed by vacuum pump 230 , via contaminant collector 115 .
  • FIG. 3 is a schematic diagram of an alpha particle ionizing source 220 , according to the present invention.
  • Non-ionized gas 305 enters a chamber having a radiation source 310 , which produces alpha particles 315 .
  • the alpha particles 315 bombard the gas (as illustrated generally at flow 320 ) to produce the ionized gas 140 , which then exits and is directed onto the reticle 110 .
  • the ionizing source 310 is a radioactive isotope such as Polonium or Americium.
  • the radiation source 310 can be replaced by an electrostatic device used to ionize the gas.
  • FIG. 4 is a cross-sectional view of an example embodiment of the present invention.
  • the reticle 110 is shown in cross section and is moved across the exposure field 105 in a step and scan fashion.
  • the light corresponding to the exposure field 105 travels from right to left in this figure and passes through the transmissive reticle, as illustrated by the arrows.
  • the present invention can also be adapted for lithography systems implementing a reflective reticle.
  • a single delivery tube 430 directs the ionized gas stream 140 onto the reticle 110 .
  • Plural delivery tubes including tubes on both sides of the exposure field, can be used.
  • Particulate contaminants 150 are dislodged from the mask surface by the ionized gas stream 140 and removed via vacuum by contaminant collector tubes 445 .
  • a single collector tube can be used.
  • the delivery tube and collector tubes can have cylindrical, elliptical, rectangular, or the like, cross section.
  • FIG. 5 is a perspective view of an example embodiment of the present invention.
  • the reticle 110 is shown with its patterned side facing upward.
  • the reticle 110 is moved underneath the exposure field 105 in step and scan directions 580 , as a portion of the mask is imaged onto the wafer (not shown).
  • Gas source 210 supplies non-ionized gas to delivery tube 540 .
  • Ionizing source 220 is not shown in this figure.
  • a radiation source can be located within delivery tube 540 , or located in the supply tubing between the gas source 210 and the delivery tube 540 .
  • the alpha particle source can be Americium, Polonium, or any other radioactive isotope known to one skilled in the art to produce alpha particles, and can be adhesively affixed.
  • the Delivery tube 540 contains a pattern of holes, slots, slits, or jets 550 and, in said yet another embodiment, an internal alpha particle source.
  • the size, shape, number and location of the holes, slots, slits, or jets 550 used to deliver the ionized gas 140 will be determined by implementation requirements.
  • holes, slots, slits, or jets 550 can be located directly underneath the delivery tube 540 .
  • Example embodiment 500 can also contain a plurality of delivery tube 540 .
  • Delivery tube 540 directs the ionized gas 140 onto the reticle 110 .
  • the ionized gas 140 dislodges particulate contamination.
  • the vacuum tubes 570 contain a pattern of holes, slots, slits, or jets 585 .
  • the size, shape, number and location of the holes, slots, slits, or jets 585 used to deliver the ionized gas 140 will be determined by implementation requirements.
  • holes, slots, slits, or jets 585 can be located directly underneath the vacuum tubes 570 .
  • Example embodiment 500 can also contain only one of vacuum tubes 570 .
  • Vacuum tubes 570 vacuum the particulate contaminants 150 from the patterned side of the reticle 110 and transport the particulate contaminants 150 to an exhaust pump 565 , where they are eventually filtered, or otherwise removed/discarded.
  • the position of the delivery tube 540 and the vacuum tubes 570 can be reversed.
  • automated cleaning can be performed by computer control to vary the amount of cleaning.
  • the gas flow can be adjusted based on system variables, such as the level of contamination (perhaps determined by sampling the gas prior to the exhaust pump), temperature, pressure, or the like variables.
  • particulate contaminants are continuously being removed from the reticle 110 in-situ during lithography.
  • the above described cleaning can be done before, during and/or after imaging is being performed.

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US09/753,665 2001-01-04 2001-01-04 Method and apparatus for in-situ lithography mask cleaning Expired - Lifetime US6589354B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US09/753,665 US6589354B2 (en) 2001-01-04 2001-01-04 Method and apparatus for in-situ lithography mask cleaning
JP2002563079A JP4065200B2 (ja) 2001-01-04 2002-01-04 インサイチュリソグラフィマスククリーニング
PCT/US2002/000098 WO2002063396A1 (en) 2001-01-04 2002-01-04 In-situ lithography mask cleaning
KR1020027011536A KR100722905B1 (ko) 2001-01-04 2002-01-04 현장에서의 리소그래피 마스크 세척을 위한 방법 및 장치
EP02718777A EP1259859A1 (en) 2001-01-04 2002-01-04 In-situ lithography mask cleaning

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US09/753,665 US6589354B2 (en) 2001-01-04 2001-01-04 Method and apparatus for in-situ lithography mask cleaning

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US20020083957A1 US20020083957A1 (en) 2002-07-04
US6589354B2 true US6589354B2 (en) 2003-07-08

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US20030184720A1 (en) * 2002-01-18 2003-10-02 Asml Netherlands, B.V. Lithographic apparatus, apparatus cleaning method, device manufacturing method and device manufactured thereby
US20050139785A1 (en) * 2003-12-30 2005-06-30 Asml Netherlands B.V. Lithographic apparatus and radiation source comprising a debris-mitigation system and method for mitigating debris particles in a lithographic apparatus
US20050191563A1 (en) * 2004-02-26 2005-09-01 Yi-Ming Dai Method and system for reducing and monitoring precipitated defects on masking reticles
US20060148263A1 (en) * 2005-01-05 2006-07-06 Choi Yo-Han Dry etching apparatus having particle removing device and method of fabricating phase shift mask using the same
US20070146657A1 (en) * 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
US20070146658A1 (en) * 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
DE102006043407A1 (de) * 2006-09-15 2008-03-27 Carl Zeiss Smt Ag Optisches Projektionssystem
US20090062956A1 (en) * 2007-08-28 2009-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for automated inert gas charging in a reticle stocker
US20090098309A1 (en) * 2007-10-15 2009-04-16 Advantech Global, Ltd In-Situ Etching Of Shadow Masks Of A Continuous In-Line Shadow Mask Vapor Deposition System
US20100183987A1 (en) * 2006-12-08 2010-07-22 Canon Kabushiki Kaisha Exposure apparatus
US10831115B1 (en) 2019-07-19 2020-11-10 Samsung Electronics Co., Ltd. Reticle management method and semiconductor device fabrication method including the same

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EP1329773A3 (en) * 2002-01-18 2006-08-30 ASML Netherlands B.V. Lithographic apparatus, apparatus cleaning method, and device manufacturing method
WO2004023490A2 (en) * 2002-09-09 2004-03-18 General Nanotechnology Llc Fluid delivery for scanning probe microscopy
TWI232492B (en) * 2004-06-04 2005-05-11 Au Optronics Corp A process chamber equipped with a cleaning function
JP2006155983A (ja) * 2004-11-26 2006-06-15 Sii Nanotechnology Inc 電子ビーム欠陥修正装置の除電方法およびその装置
US7927969B2 (en) * 2006-03-08 2011-04-19 Stmicroelectronics S.A. Cleaning of photolithography masks
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske
KR101115285B1 (ko) * 2009-07-31 2012-02-27 주식회사 다린 펌프 디스펜서의 자동화 검사방법
JP6025976B2 (ja) * 2012-07-06 2016-11-16 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置
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CN106292179B (zh) * 2016-09-12 2019-09-10 京东方科技集团股份有限公司 一种掩膜版清洁装置
US10495987B2 (en) 2017-09-28 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Radiation source apparatus, EUV lithography system, and method for decreasing debris in EUV lithography system
CN109782551A (zh) * 2019-01-11 2019-05-21 深圳市华星光电技术有限公司 掩膜板异物清除装置
US11600484B2 (en) * 2019-08-22 2023-03-07 Taiwan Semiconductor Manufacturing Company Ltd. Cleaning method, semiconductor manufacturing method and a system thereof
US11294292B2 (en) * 2019-12-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Particle removing assembly and method of cleaning mask for lithography
CN111257335B (zh) * 2020-01-09 2023-01-24 Oppo（重庆）智能科技有限公司 电子设备内部尘点检测方法
CN113625529B (zh) * 2021-08-13 2022-07-22 深圳市龙图光电有限公司 掩模版曝光过程表面颗粒实时清除装置

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US20060148263A1 (en) * 2005-01-05 2006-07-06 Choi Yo-Han Dry etching apparatus having particle removing device and method of fabricating phase shift mask using the same
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US20070146658A1 (en) * 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
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US8064038B2 (en) 2005-12-27 2011-11-22 Asml Netherlands B.V. Inspection apparatus, lithographic system provided with the inspection apparatus and a method for inspecting a sample
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US8492283B2 (en) 2007-08-28 2013-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for automated inert gas charging in a reticle stocker
US9772563B2 (en) 2007-08-28 2017-09-26 Taiwan Semicondutor Manufacturing Co., Ltd. Method and structure for automated inert gas charging in a reticle stocker
US20090098309A1 (en) * 2007-10-15 2009-04-16 Advantech Global, Ltd In-Situ Etching Of Shadow Masks Of A Continuous In-Line Shadow Mask Vapor Deposition System
US10831115B1 (en) 2019-07-19 2020-11-10 Samsung Electronics Co., Ltd. Reticle management method and semiconductor device fabrication method including the same

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KR20030034049A (ko) 2003-05-01
WO2002063396A1 (en) 2002-08-15
KR100722905B1 (ko) 2007-05-30

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