US20180302990A1 - Molded Circuit Substrates - Google Patents
Molded Circuit Substrates Download PDFInfo
- Publication number
- US20180302990A1 US20180302990A1 US15/766,943 US201615766943A US2018302990A1 US 20180302990 A1 US20180302990 A1 US 20180302990A1 US 201615766943 A US201615766943 A US 201615766943A US 2018302990 A1 US2018302990 A1 US 2018302990A1
- Authority
- US
- United States
- Prior art keywords
- conductive layer
- insulating
- molded circuit
- delineating
- moldable material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 72
- 238000005192 partition Methods 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 44
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 230000005693 optoelectronics Effects 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 20
- 238000011049 filling Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- -1 polydimethylsiloxane Polymers 0.000 description 2
- 239000012858 resilient material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0284—Details of three-dimensional rigid printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0014—Shaping of the substrate, e.g. by moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09118—Moulded substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
Definitions
- This disclosure relates to durable electronic module substrates.
- PCBs printed circuit boards
- electronic modules can include sidewalls which then are mounted and fixed to the PCBs via adhesive.
- PCB's also can provide mechanical support for electronic components within the module, and can connect various electronic components electrically using conductive tracks and pads and other features etched from an electrically conductive sheet (e.g., copper) laminated onto an electrically insulating substrate (e.g., glass-reinforced epoxy).
- Electrical connections also can be incorporated into PCBs composed of a plurality of planar layers, for example, PCBs with an electrically conductive layer clad on each side by electrically insulating layers.
- Components or contacts on either side of such an assembly can be electrically connected by vias, plated-through holes.
- Electronic components e.g., laser diodes
- the electrically insulating layers e.g., glass-reinforced epoxy
- PCBs are also thermally insulating.
- the accumulation of heat causes the temperature of the electronic module, or portions of the electronic module, to rise to levels sufficient to damage sensitive components within the module. In some instances, the accumulation of heat causes components within the module to become misaligned (e.g., due to thermal expansion of components within the module). These effects may degrade module performance significantly.
- Vias are often incorporated into PCBs with at least a single electrically conductive layer cladded on each side by electrically insulating layers. Vias then are fabricated by drilling holes through the insulating layers from opposing sides and into the electrically conductive layer where the holes ideally meet.
- misalignments can occur such that the holes do not meet as intended.
- the drilling process can be an expensive and time-consuming fabrication step. Accordingly, the fabrication of electrical connections without the drilling step could provide reductions in cost and improvements in fabrication efficiencies.
- PCBs may pose other challenges. For example, often the host devices (e.g., smart phones) into which the electronic modules are incorporated are designed and fabricated to be as thin as possible (i.e., ultra-thin). Consequently, the electronic modules incorporated into these ultra-thin host devices must also be as thin as possible. PCBs, however can contribute significantly to the overall thickness of such electronic modules, thereby limiting their compatibility with ultra-thin host devices. Although in some instances PCBs may be fabricated with ultra-thin dimensions, they also may be excessively brittle or otherwise not durable making handling during fabrication difficult. Further, attempts to avoid the use of ultra-thin PCBs by thinning PCBs of more typical thicknesses in situ are not successful due to the presence of vias. The vias can aggravate machining efforts, thereby limiting the extent to which the thickness of the PCBs can be customized.
- a molded circuit substrate in one aspect, includes an insulating sidewall and a conductive layer, the conductive layer is surrounded by the insulating sidewall, and the insulating sidewall defines an electrically isolated region of the conductive layer.
- the insulating sidewall further defines a structural component within an electronic module.
- the insulating sidewall has the dual function of delineating an electrically isolated region of the conductive layer and delineating a structural component within the electronic module.
- thermal stresses can be reduced.
- the molded circuit substrate can be fabricated to be ultra-thin.
- the electronic module into which the molded circuit substrate is incorporated can be fabricated to be ultra-thin.
- misalignments during fabrication such as the misalignments that might occur during fabrication of vias, can be avoided.
- the structural component of the insulating sidewalls defines non-transparent sidewalls in an optoelectronic module into which the molded circuit substrate is incorporated.
- the insulating sidewalls can be advantageous, for example, by providing electrically isolated regions of the conductive layer (that is, they surround the conductive layer) and further providing the structural component of the non-transparent sidewalls, accordingly, permitting superior control of stray light into and/or out of the optoelectronic module.
- the structural component can define lateral dimensions of a transparent overmold.
- the transparent overmold includes an optical element.
- the transparent overmold includes an optical filter.
- the overmold and the molded circuit substrate can provide an advantage, for example, since in many instance the conductive layer can further include an active (heat generating component).
- the overmold may prevent the adequate dissipation of heat generated from the active component; accordingly, in such instances, the conductive layer can be advantageous by facilitating the dissipation of heat form the optoelectronic module.
- the molded circuit substrate further includes an active optoelectronic component mounted on a surface of the conductive layer.
- the active optoelectronic component includes at least one of the following: a laser diode, an light-emitting diode, a photodiode, an array of laser diodes, an array of light-emitting diodes, and/or an array of photodiodes.
- the molded circuit substrate further includes an optical element, and the structural component further defines a substrate on which the optical element is mounted. In some cases, the structural component further defines a separation between the optical element and the conductive layer.
- the molded circuit substrate can provide an advantage, wherein the structural component of the insulating sidewalls can define a separation between the optical element and the conductive layer; for example, in such instances, as the insulating sidewalls provide electrically isolated regions of the conductive layer and the structural component of providing a separation between the optical element and the conductive layer, the separation can be better controlled and predicted (e.g., with changes in operating temperature of the module into which the molded circuit substrate is incorporated).
- the molded circuit substrate further includes an insulating partition.
- the insulating partition can define an electrically isolated region of the conductive layer.
- a method for manufacturing a plurality of molded circuit substrates includes: mounting a conductive layer to an etch-resistant substrate; applying a photoresist to the conductive layer; selectively curing the photoresist on the conductive layer to form a pattern delineating the lateral dimensions of a plurality of insulating sidewalls; removing the photoresist from the conductive layer such that the removed photoresist defines the lateral dimensions of the insulating sidewalls; etching the conductive layer; stripping the cured photoresist from the conductive layer; mounting a sidewall tool to the conductive layer, the sidewall tool including cavities delineating a plurality of insulating sidewalls; filling the cavities delineating the plurality of insulating sidewalls with non-transparent moldable material; curing the non-transparent moldable material; removing the sidewall tool from the conductive layer and the cured non-transparent moldable material, the cured moldable material being the plurality of
- the method for manufacturing the molded circuit substrate can be advantageous.
- the dimensions (e.g., the thickness) of the molded circuit substrate can be further customized by grinding a surface of the conductive layer following curing of the insulating sidewalls.
- the cured insulating sidewalls provide sufficient mechanical stability to permit grinding a surface of the conductive layer.
- a method for manufacturing a plurality of molded circuit substrates further includes: mounting an overmold tool to the plurality of insulating sidewalls, wherein the overmold tool including cavities delineating a plurality of overmolds; filling the cavities delineating the plurality of overmolds with transparent moldable material; curing the transparent moldable material; and removing the overmold tool from the cured non-transparent and transparent moldable material.
- the method for manufacturing a plurality of molded circuit substrate further includes dicing through the insulating sidewalls.
- a method for manufacturing a plurality of molded circuit substrates includes: mounting a conductive layer to an etch-resistant substrate; applying a photoresist to the conductive layer; selectively curing the photoresist on the conductive layer to form a pattern delineating the lateral dimensions of a plurality of insulating sidewalls; removing the photoresist from the conductive layer such that the removed photoresist defines the lateral dimensions of the insulating sidewalls; etching the conductive layer; stripping the cured photoresist from the conductive layer; mounting a flat tool to the conductive layer, the flat tool being substantially flat and delineating a plurality of insulating partition cavities; filling the insulating partition cavities with non-transparent moldable material; curing the non-transparent moldable material; removing the flat tool from the conductive layer and the cured non-transparent moldable material, the cured moldable material being the plurality of insulating partition cavities; mounting a sidewall tool to the conductive layer
- FIG. 1A - FIG. 1H depict example steps for manufacturing a plurality of molded circuit substrates.
- FIG. 2A - FIG. 2B depict example optoelectronic modules into which the molded circuit substrates are incorporated.
- FIG. 3 depicts a flow diagram illustrating example steps for manufacturing a plurality of molded circuit substrates.
- FIG. 1A - FIG. 1H depict example steps for manufacturing a plurality of molded circuit substrates and example optoelectronic modules into which the molded circuit substrates can be incorporated.
- FIG. 1A depicts an assembly 100 including a conductive layer 101 such as a layer composed of copper, nickel, aluminum or any other electrically and thermally conductive metal or alloy.
- the conductive layer 101 can be a few microns thick in some instances, in other instances, the conductive layer can up to 50 ⁇ m thick, while still in other instances the conductive layer can be up to 100 ⁇ m thick.
- the conductive layer 101 can be mounted to an etch resistance substrate 102 for mechanical support.
- the etch-resistant substrate 102 can be an acid-resistant adhesive tape, wherein the adhesion properties of such a tape can be customized with, for example, exposure to ultraviolet radiation.
- FIG. 1A further depicts a photoresist 103 mounted on a surface of the conductive layer 101 .
- the photoresist can be selectively cured, where the uncured photoresist is removed (the state of the photoresist 103 depicted in FIG. 1A ).
- an alternative to a photoresist can be used, for example, another material could be selectively deposited onto a surface of the conductive layer 101 .
- Photoresists i.e., photo-lithography generally
- photo-lithography can be patterned with smaller tolerances (e.g., only a few microns); consequently, photo-lithography can be suited for some implementations that require small tolerances, such as molded circuit substrates integral to high-performance optoelectronic modules.
- the assembly depicted in FIG. 1A is exposed to an etch solution such as an acid.
- the etch solution selectively removes portions of the conductive layer as depicted in FIG. 1B .
- FIG. 1B depicts the conductive layer 101 with removed portions 104 mounted on the etch-resistant substrate 102 after the assembly 100 in FIG. 1A is subjected to the etch solution. Portions of the conductive layer 104 are removed by the etch solution subsequently delineating electrically isolated regions of the conductive layer 103 .
- FIG. 1C depicts a sidewall tool 105 in contact with the conductive layer 102 .
- the sidewall tool 105 can be composed of a resilient material such as polydimethylsiloxane (PDMS).
- PDMS polydimethylsiloxane
- the sidewall tool 105 includes cavities 106 delineating insulating sidewalls.
- the sidewall tool 105 further includes cavities 107 delineating insulating partitions in some implementations.
- the sidewall tool 105 further includes conduits 108 for the conductance of moldable material such as liquid (curable) polymers and/or epoxy resins (as indicated by the arrow in FIG. 1C ).
- the moldable material can be non-transparent, for example epoxy resins containing inorganic or organic filler such as carbon black.
- FIG. 1D depicts a flat tool 109 in contact with the conductive layer 101 .
- the flat tool 109 can be composed of a resilient material such as polydimethylsiloxane (PDMS).
- PDMS polydimethylsiloxane
- the flat tool 109 can be substantially flat wherein the removed portions of the conductive layer 104 define cavities, the cavities delineating insulating partitions.
- the flat tool 109 further includes conduits 108 for the conductance of moldable material such as liquid (curable) polymers and/or epoxy resins, while in other implementations the flat tool need not contain further conduits, the removed portions of the conductive layer further delineating conduits for the conductance of moldable material as above.
- the moldable material can be non-transparent, for example epoxy resins containing inorganic or organic filler such as carbon black.
- FIG. 1E depicts a plurality of molded circuit substrates after curing the moldable material described above.
- the molded circuit substrate can include a plurality of cured insulating sidewalls 111
- the molded circuit substrate can include a plurality of cured insulting sidewalls 111 and a plurality of insulating partitions 112 (as depicted in FIG. 1D ).
- the molded circuit substrates 110 can include a plurality of insulating partitions 112 (e.g., as a result of employing the flat tool depicted in FIG. 1D ).
- the insulating side-walls 111 can provide an advantage in some implementations, for example; in implementations where the molded circuit substrates 110 are implemented in optoelectronic modules, the insulating sidewalls 111 can provide electrical isolation between regions of the conductive layer 103 while also isolating an active component mounted on isolated region of the conductive layer 103 from stray light.
- FIG. 1F depicts the assembly depicted in FIG. 1E with the addition of mounted active components 113 such as laser diodes, light-emitting diodes, photodiodes, arrays of laser diodes, arrays of light-emitting diodes, and/or array of photo-diodes.
- active components 113 such as laser diodes, light-emitting diodes, photodiodes, arrays of laser diodes, arrays of light-emitting diodes, and/or array of photo-diodes.
- FIG. 1G depicts an assembly including the molded circuit substrate with a plurality of overmolds 114 .
- the plurality of overmolds 114 can further include optical elements 115 .
- FIG. 1H depicts a plurality of molded circuit substrates incorporated into a plurality of optoelectronic modules, wherein the plurality can be diced (or otherwise separated) thereby forming discrete optoelectronic modules (as indicated by the dotted line).
- FIG. 2A - FIG. 2B depict example optoelectronic modules into which the molded circuit substrates are incorporated.
- FIG. 2A depicts an example of a single-channel optoelectronic module 200 A.
- the single-channel optoelectronic module 200 A includes a molded circuit substrate 201 A.
- the molded circuit substrate includes a conductive layer 202 A surrounded by an insulating sidewall 203 A.
- the conductive layer can be, for example, composed of copper, nickel, aluminum, or other metals or alloys with substantial thermal and electrical conductivity.
- the molded circuit substrate 201 A further includes an insulating partition 204 A.
- the insulating partition 204 A provides a plurality of electrically isolated regions 205 A of the conductive layer 202 A.
- the singe-channel optoelectronic module 200 A further includes an active component 206 A electrically connected to the plurality of electrically isolated regions 205 A via an electrical connection 207 A.
- the active component 206 A can be, for example, a light-emitting diode, a laser diode, a photodiode, an array of light-emitting diodes, an array of laser diodes (e.g., a vertical-cavity surface-emitting laser array), and/or an array of photodiodes (such as a charge-coupled device array and/or an complementary metal-oxide-semiconductor array).
- the single-channel optoelectronic module 200 A further includes an overmold 208 A.
- the overmold 208 A can be composed of substantially transparent material that permits optimal function of the active component 206 A such as optical epoxy resins or polymers.
- the single-channel optoelectronic module can further include an optical element 209 A mounted and aligned with the active component 206 A.
- the insulating sidewall 203 A can further provide a structural component.
- the insulating side wall 203 A can define the lateral dimensions of the overmold 208 .
- the insulating side wall 203 A can be substantially non-transparent to wavelengths of light such as wavelengths to which the active component 206 A is sensitive and/or emits.
- the insulating sidewall 203 A can be composed of an epoxy resin, into which substantially non-transparent filler has been incorporated, such as carbon black.
- the single-channel optoelectronic module can be operable to function as a light emitter (e.g., a light projector a might be used for structured light applications) while in other implementations, the single-channel optoelectronic module can be operable to function as a light-sensitive module (e.g., such as an imager or camera).
- FIG. 2B depicts an example of a multi-channel optoelectronic module 200 B.
- the multi-channel optoelectronic module 200 B includes a molded circuit substrate 201 B.
- the molded circuit substrate 201 B includes conductive layers 202 B surrounded by insulating sidewalls 203 B.
- the molded circuit substrate 201 B further includes insulating partitions 204 B.
- the insulating partitions 204 B provide a plurality of electrically isolated regions 205 B of the conductive layers 202 B.
- the multi-channel optoelectronic module 200 B further includes active components 206 B electrically connected to the plurality of electrically isolated regions 205 B via electrical connections 207 B.
- the multi-channel optoelectronic module 200 B can further include optical elements 209 B mounted in an optical element substrate 210 B, the optical elements 209 B being mounted and aligned with respective active components 206 B.
- the insulating sidewalls 203 B can further provide structural components.
- the insulating side walls 203 B can define a separation 211 B between the optical elements and the respective active components 206 B.
- the insulating side walls 203 B can be substantially non-transparent to wavelengths of light such as wavelengths to which the active components 206 B are sensitive and/or emit.
- the active component 206 B can be, for example, a light-emitting diode, a laser diode, an array of light-emitting diodes, an array of laser diodes a vertical-cavity surface-emitting laser array).
- an adjacent channel in the multi-channel optoelectronic module can include an active component 206 B that can be, for example, a photodiode, and/or an array of photodiodes (such as a charge-coupled device array and/or an complementary metal-oxide-semiconductor array.
- the multi-channel optoelectronic module can be operable to function as a proximity detector, while in other implementations, the multi-channel optoelectronic module can be operable to function as a 3D imaging camera (such as a time-of-flight camera).
- FIG. 3 depicts a flow diagram 300 illustrating example steps for manufacturing a plurality of molded circuit substrates.
- the conductive layer is mounted to an etch-resistant substrate such as adhesive, UV-curable tape.
- a photoresist is applied to the conductive layer, for example, via spraying, spin coating or by another method apparent to a person skilled in the art to which this disclosure pertains.
- the photoresist is selectively exposed to radiation, such as ultraviolet radiation. For example, in some cases a mask with a pattern can be used to selectively expose the photoresist to the radiation.
- the uncured photoresist is removed in a developing step.
- a subsequent step 305 the conductive layer is etched with an etching solution, such as a strong acid.
- the cured photoresist can be stripped away with, for example, 1-methyl-2-pyrrodidon, dimethyl sulfoxide, an alkaline solution, and/or oxygen plasma.
- a sidewall tool is mounted with respect to the conductive layer, wherein the sidewall tool includes cavities delineating insulating sidewalls and/or insulating partitions within the conductive layer.
- the cavities in the sidewall tool are filled with moldable material.
- the moldable material is substantially non-transparent upon curing.
- the moldable material is cured e.g., via ultraviolet radiation and/or with heat.
- the sidewall tool is removed from the conductive layer and the cured moldable material.
- the cured moldable material defines the insulating sidewalls and/or the insulating partitions.
- the conductive layer is plated e.g., with metals such as gold, palladium, in order to protect the conductive surface from degradation and to improve electrical conductivity.
- active components e.g., photodiodes, laser diodes, light-emitting diodes
- soldered electrically mounted
- an overmold tool is mounted to the insulating sidewalls, wherein the overmold tool includes cavities partially delineating the dimensions of the overmolds. Further, in some implementations, the overmold tool can contain cavities delineating optical elements.
- the cavities in the overmold tool are filled with transparent moldable material.
- the moldable material is cured e.g., with ultraviolet light and/or heat.
- the overmold tool is removed from the insulating sidewalls.
- the insulating sidewalls are diced producing discrete electronic modules in which the molded circuit substrates are incorporated.
- the molded circuit substrate and its fabrication described in the above examples can further include, other features not described above. In some implementations, some steps may be omitted and/or other additional steps may be included. Further, although the present invention has been described in detail with respect to various examples, other implementations can include combinations of various disclosed features. Therefore, other implementations are within the scope of the claims.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Structure Of Printed Boards (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Optical Couplings Of Light Guides (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/766,943 US20180302990A1 (en) | 2015-10-07 | 2016-10-07 | Molded Circuit Substrates |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562238406P | 2015-10-07 | 2015-10-07 | |
PCT/SG2016/050496 WO2017061955A1 (fr) | 2015-10-07 | 2016-10-07 | Substrats de circuit moulé |
US15/766,943 US20180302990A1 (en) | 2015-10-07 | 2016-10-07 | Molded Circuit Substrates |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SG2016/050496 A-371-Of-International WO2017061955A1 (fr) | 2015-10-07 | 2016-10-07 | Substrats de circuit moulé |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/597,447 Continuation US11013123B2 (en) | 2015-10-07 | 2019-10-09 | Molded circuit substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
US20180302990A1 true US20180302990A1 (en) | 2018-10-18 |
Family
ID=58488154
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/766,943 Abandoned US20180302990A1 (en) | 2015-10-07 | 2016-10-07 | Molded Circuit Substrates |
US16/597,447 Active US11013123B2 (en) | 2015-10-07 | 2019-10-09 | Molded circuit substrates |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/597,447 Active US11013123B2 (en) | 2015-10-07 | 2019-10-09 | Molded circuit substrates |
Country Status (7)
Country | Link |
---|---|
US (2) | US20180302990A1 (fr) |
EP (1) | EP3360157B1 (fr) |
KR (1) | KR102668526B1 (fr) |
CN (1) | CN108352356B (fr) |
SG (2) | SG11201802939TA (fr) |
TW (1) | TWI708316B (fr) |
WO (1) | WO2017061955A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180017741A1 (en) * | 2016-07-15 | 2018-01-18 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
CN112908938A (zh) * | 2019-12-03 | 2021-06-04 | 原相科技股份有限公司 | 光学感测封装模块 |
US11156796B2 (en) * | 2017-09-11 | 2021-10-26 | Pixart Imaging Inc. | Optical sensor package module |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017176213A1 (fr) * | 2016-04-08 | 2017-10-12 | Heptagon Micro Optics Pte. Ltd. | Modules optoélectroniques minces comportant des ouvertures et fabrication desdits modules |
KR102607890B1 (ko) | 2018-06-01 | 2023-11-29 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
US11900581B2 (en) | 2020-09-22 | 2024-02-13 | Future Dial, Inc. | Cosmetic inspection system |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6946714B2 (en) * | 1997-12-15 | 2005-09-20 | Osram Gmbh | Surface mounting optoelectronic component and method for producing same |
US20080054288A1 (en) * | 2006-07-05 | 2008-03-06 | Tir Technology Lp | Lighting Device Package |
US20110037886A1 (en) * | 2009-08-14 | 2011-02-17 | Harpuneet Singh | Wafer level camera module with molded housing and method of manufacturing |
US8735931B2 (en) * | 2006-04-17 | 2014-05-27 | Samsung Electronics Co., Ltd. | Light emitting diode package and fabrication method thereof |
US20150034975A1 (en) * | 2013-07-30 | 2015-02-05 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
US20150372185A1 (en) * | 2014-06-20 | 2015-12-24 | Heptagon Micro Optics Pte. Ltd. | Compact light sensing modules including reflective surfaces to enhance light collection and/or emission, and methods of fabricating such modules |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100414479B1 (ko) | 2000-08-09 | 2004-01-07 | 주식회사 코스타트반도체 | 반도체 패키징 공정의 이식성 도전패턴을 갖는 테이프 및그 제조방법 |
US20060087010A1 (en) | 2004-10-26 | 2006-04-27 | Shinn-Gwo Hong | IC substrate and manufacturing method thereof and semiconductor element package thereby |
US7892412B2 (en) | 2005-08-05 | 2011-02-22 | Mutual-Tek Industries Co., Ltd. | Manufacturing process of embedded type flexible or rigid printed circuit board |
KR20100080423A (ko) * | 2008-12-30 | 2010-07-08 | 삼성엘이디 주식회사 | 발광소자 패키지 및 그 제조방법 |
US8097894B2 (en) * | 2009-07-23 | 2012-01-17 | Koninklijke Philips Electronics N.V. | LED with molded reflective sidewall coating |
US8791489B2 (en) * | 2012-04-05 | 2014-07-29 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic module |
JP2013239539A (ja) * | 2012-05-14 | 2013-11-28 | Shin Etsu Chem Co Ltd | 光半導体装置用基板とその製造方法、及び光半導体装置とその製造方法 |
KR102107575B1 (ko) * | 2012-05-17 | 2020-05-08 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 웨이퍼 스택 조립 |
TWI556476B (zh) | 2013-01-17 | 2016-11-01 | 隆達電子股份有限公司 | 發光裝置、發光二極體承載座及其模具 |
US9094593B2 (en) | 2013-07-30 | 2015-07-28 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
SG10201705797UA (en) * | 2013-09-10 | 2017-08-30 | Heptagon Micro Optics Pte Ltd | Compact opto-electronic modules and fabrication methods for such modules |
CN104465938A (zh) * | 2013-09-22 | 2015-03-25 | 展晶科技(深圳)有限公司 | 模具及使用该模具制造发光二极管的方法 |
TWI467528B (zh) * | 2013-10-30 | 2015-01-01 | Au Optronics Corp | 發光二極體顯示面板及其製作方法 |
DE102013224581A1 (de) | 2013-11-29 | 2015-06-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
US10352764B2 (en) * | 2015-09-24 | 2019-07-16 | Ams Sensors Singapore Pte. Ltd. | Concealed optoelectronic module |
US10424566B2 (en) * | 2016-12-30 | 2019-09-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
-
2016
- 2016-10-07 WO PCT/SG2016/050496 patent/WO2017061955A1/fr active Application Filing
- 2016-10-07 EP EP16854003.7A patent/EP3360157B1/fr active Active
- 2016-10-07 TW TW105132672A patent/TWI708316B/zh active
- 2016-10-07 KR KR1020187012584A patent/KR102668526B1/ko active IP Right Grant
- 2016-10-07 SG SG11201802939TA patent/SG11201802939TA/en unknown
- 2016-10-07 CN CN201680065302.4A patent/CN108352356B/zh active Active
- 2016-10-07 SG SG10201912998RA patent/SG10201912998RA/en unknown
- 2016-10-07 US US15/766,943 patent/US20180302990A1/en not_active Abandoned
-
2019
- 2019-10-09 US US16/597,447 patent/US11013123B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6946714B2 (en) * | 1997-12-15 | 2005-09-20 | Osram Gmbh | Surface mounting optoelectronic component and method for producing same |
US8735931B2 (en) * | 2006-04-17 | 2014-05-27 | Samsung Electronics Co., Ltd. | Light emitting diode package and fabrication method thereof |
US20080054288A1 (en) * | 2006-07-05 | 2008-03-06 | Tir Technology Lp | Lighting Device Package |
US20110037886A1 (en) * | 2009-08-14 | 2011-02-17 | Harpuneet Singh | Wafer level camera module with molded housing and method of manufacturing |
US20150034975A1 (en) * | 2013-07-30 | 2015-02-05 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
US20150372185A1 (en) * | 2014-06-20 | 2015-12-24 | Heptagon Micro Optics Pte. Ltd. | Compact light sensing modules including reflective surfaces to enhance light collection and/or emission, and methods of fabricating such modules |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180017741A1 (en) * | 2016-07-15 | 2018-01-18 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
US11156796B2 (en) * | 2017-09-11 | 2021-10-26 | Pixart Imaging Inc. | Optical sensor package module |
CN112908938A (zh) * | 2019-12-03 | 2021-06-04 | 原相科技股份有限公司 | 光学感测封装模块 |
Also Published As
Publication number | Publication date |
---|---|
CN108352356B (zh) | 2022-12-30 |
WO2017061955A1 (fr) | 2017-04-13 |
KR102668526B1 (ko) | 2024-05-24 |
KR20180064467A (ko) | 2018-06-14 |
EP3360157A4 (fr) | 2019-06-26 |
US11013123B2 (en) | 2021-05-18 |
TWI708316B (zh) | 2020-10-21 |
EP3360157A1 (fr) | 2018-08-15 |
SG11201802939TA (en) | 2018-05-30 |
CN108352356A (zh) | 2018-07-31 |
SG10201912998RA (en) | 2020-02-27 |
EP3360157B1 (fr) | 2020-09-02 |
US20200045828A1 (en) | 2020-02-06 |
TW201740502A (zh) | 2017-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11013123B2 (en) | Molded circuit substrates | |
US9258467B2 (en) | Camera module | |
KR100796522B1 (ko) | 전자소자 내장형 인쇄회로기판의 제조방법 | |
KR100756374B1 (ko) | 인쇄회로기판 및 그 제조방법 | |
US7450793B2 (en) | Semiconductor device integrated with opto-electric component and method for fabricating the same | |
TWI777947B (zh) | 光電模組總成及製造方法 | |
TW202146953A (zh) | 光電傳送複合模組及光電混載基板 | |
KR101079867B1 (ko) | 광기판 및 그 제조방법 | |
US20170294428A1 (en) | Method of producing optoelectronic modules and an assembly having a module | |
WO2016028098A1 (fr) | Carte de circuit imprimé à noyau métallique et son procédé de fabrication | |
JP5136142B2 (ja) | 光基板の製造方法 | |
JP2017223739A (ja) | 光モジュール及び光モジュール製造方法 | |
JP5076869B2 (ja) | 光基板の製造方法 | |
US20200355885A1 (en) | Optoelectronic modules having locking assemblies and methods for manufacturing the same | |
US20180315911A1 (en) | Electrical-Contact Assemblies | |
US11682658B2 (en) | Light-emitting package and method of manufacturing the same | |
JP5104039B2 (ja) | 光基板の製造方法 | |
US20240064901A1 (en) | Circuit board assembly and manufacturing method thereof | |
WO2020042840A1 (fr) | Ensemble carte de circuit imprimé, son procédé de fabrication, et son application | |
JP5109643B2 (ja) | 光基板の製造方法 | |
JP2003084157A (ja) | 光導波路回路の製造方法 | |
JP2017003648A (ja) | 通信モジュール | |
JP2019061065A (ja) | 光導波路および光回路基板 | |
CN113488490A (zh) | 基于穿塑通孔的cis板级扇出型封装结构及其制作方法 | |
CN110868791A (zh) | 电路板组件及其制造方法和应用 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HEPTAGON MICRO OPTICS PTE. LTD., SINGAPORE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TESANOVIC, BOJAN;SPRING, NICOLA;GUBSER, SIMON;AND OTHERS;SIGNING DATES FROM 20151008 TO 20151109;REEL/FRAME:045692/0001 |
|
AS | Assignment |
Owner name: AMS SENSORS SINGAPORE PTE. LTD., SINGAPORE Free format text: CHANGE OF NAME;ASSIGNOR:HEPTAGON MICRO OPTICS PTE. LTD.;REEL/FRAME:049222/0062 Effective date: 20180205 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |