US20160104816A1 - Light emitting device and method for preparing the same - Google Patents

Light emitting device and method for preparing the same Download PDF

Info

Publication number
US20160104816A1
US20160104816A1 US14/893,466 US201414893466A US2016104816A1 US 20160104816 A1 US20160104816 A1 US 20160104816A1 US 201414893466 A US201414893466 A US 201414893466A US 2016104816 A1 US2016104816 A1 US 2016104816A1
Authority
US
United States
Prior art keywords
layer
gas
concentration doping
growing
doping layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/893,466
Other languages
English (en)
Inventor
Sung Ho An
Chang Suk HAN
Jun Ho Yun
Chae Hon KIM
Si Hoon Lyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Assigned to SEOUL VIOSYS CO., LTD. reassignment SEOUL VIOSYS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AN, SOON HO, LYU, SI HOON, YUN, JUN HO, KIM, CHAE HON, HAN, CHANG SUK
Publication of US20160104816A1 publication Critical patent/US20160104816A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Definitions

  • the present invention relates to a nitride semiconductor light emitting device, and more particularly to a nitride semiconductor light emitting device including a p-type semiconductor layer and a method for fabricating the same.
  • a nitride semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer.
  • the active layer electrons and holes are recombined to emit light.
  • the recombination rate of electrons and holes in the active layer directly affects luminous efficacy of the light emitting device.
  • the light emitting device is required to prevent overflow of electrons and an electron blocking layer of a p-type AlGaN layer is employed for this purpose.
  • a method of controlling a doping profile in the p-type semiconductor layer in order to improve injection efficiency of holes from the active layer into the p-type semiconductor layer discloses improvement in hole injection efficiency by dividing a hole injection layer and a p-type contact layer in which the hole injection layer has a lower dopant concentration than the p-type contact layer.
  • this document discloses a structure in which an undoped layer is disposed between a clad layer and the hole injection layer or between the hole injection layer and the p-type contact layer.
  • the hole injection layer is doped in a relatively low concentration, thereby restricting improvement in hole mobility.
  • the undoped layer is grown substantially under the same conditions of source gas and carrier gas as the hole injection layer and the p-type contact layer except for an Mg source gas. In this case, even though the Mg source gas is not supplied, the undoped layer has a relatively high concentration of Mg, thereby reducing hole mobility.
  • Exemplary embodiments of the present invention provide a light emitting device capable of improving efficiency in hole injection into an active layer, and a method of fabricating the same.
  • Exemplary embodiments of the present invention provide a method of growing a p-type semiconductor layer capable of reducing dopant concentration of an undoped layer in the p-type semiconductor layer, and a method of fabricating a light emitting device.
  • a light emitting device includes an n-type semiconductor layer; a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the p-type semiconductor layer and the active layer.
  • the p-type semiconductor layer includes a stack structure in which a low concentration doping layer, an undoped layer and a high concentration doping layer are sequentially stacked one above another, and a thickness of the undoped layer is greater than the sum of thicknesses of the low concentration doping layer and the high concentration doping layer.
  • a relatively thick undoped layer is disposed between the low concentration doping layer and the high concentration doping layer to increase hole mobility, thereby improving hole injection efficiency.
  • the low concentration doping layer may have a dopant concentration of 1 ⁇ 10 20 /cm 3 to 5 ⁇ 10 20 /cm 3
  • the high concentration doping layer may have a dopant concentration of 5 ⁇ 10 20 /cm 3 to 1 ⁇ 10 21 /cm 3
  • the undoped layer may have a dopant concentration of less than 2 ⁇ 10 19 /cm 3
  • the undoped layer may have a dopant concentration of 1 ⁇ 10 19 /cm 3 to less than 2 ⁇ 10 19 /cm 3 depending on depth thereof
  • the light emitting device has further improved hole mobility.
  • the low concentration doping layer may contact the electron blocking layer.
  • the light emitting device enables easy injection of holes into the active layer through the electron blocking layer.
  • the high concentration doping layer may be a p-type contact layer, thereby reducing contact resistance.
  • the light emitting device may be or include a light emitting diode chip and may be a vertical type or lateral type light emitting device, without being limited thereto.
  • a method of growing a p-type semiconductor layer via metal organic chemical vapor deposition includes growing a low concentration doping layer over a substrate within a chamber by supplying a nitrogen source gas, a gallium source gas, an Mg source gas, N 2 gas and H 2 gas into the chamber; growing an undoped layer over the low concentration doping layer by supplying a nitrogen source gas, a gallium source gas and N 2 gas into the chamber while blocking supply of the Mg source gas and the H 2 gas; and growing a high concentration doping layer on the undoped layer by supplying a nitrogen source gas, a gallium source gas, an Mg source gas, N 2 gas and H 2 gas into the chamber.
  • the H 2 gas is supplied into the chamber, thereby improving crystal quality of semiconductor layers, and during the growing of the undoped layer, supply of the H 2 is blocked, thereby decreasing the dopant concentration within the undoped layer.
  • the method of growing a p-type semiconductor layer may further include changing an atmosphere of the chamber into a nitrogen and NH 3 atmosphere by supplying a nitrogen source gas and N 2 gas into the chamber while blocking supply of the gallium source gas, the Mg source gas and the H 2 gas before growth of the low concentration doping layer. This process enables sufficient removal of H 2 gas from the chamber. Change of the atmosphere within the chamber to the nitrogen and NH 3 atmosphere may takes 3 to 10 minutes.
  • a flow rate of the H 2 gas may be higher than the flow rate of the N 2 gas.
  • the flow rate of the H 2 gas may be three to five times the flow rate of the N 2 gas.
  • a flow rate of the NH 3 gas may be less than the flow rate of the H 2 gas, and during the growing of the undoped layer, the flow rate of the N 2 gas may be higher than the flow rate of the NH 3 gas.
  • a flow rate ratio of N 2 , H 2 and NH 3 may be about 1:3:1, and during the growing of the undoped layer, the flow rate of N 2 , H 2 and NH 3 may be about 3:0:1.
  • the H 2 gas may be predominantly supplied, thereby improving crystal quality of semiconductor layers grown on the substrate, and during the growing of the undoped layer, the flow rate of the N 2 gas may be increased while blocking supply of H 2 , thereby allowing an overall pressure within the chamber to be kept constant.
  • growth temperatures may decrease in the order of the low concentration doping layer, the undoped layer and the high concentration doping layer.
  • the low concentration doping layer may have a dopant concentration of 1 ⁇ 10 20 /cm 3 to 5 ⁇ 10 20 /cm 3
  • the high concentration doping layer may have a dopant concentration of 5 ⁇ 10 20 /cm 3 to 1 ⁇ 10 21 /cm 3
  • the undoped layer may have a dopant concentration of less than 2 ⁇ 10 19 /cm 3 .
  • the p-type semiconductor layer may be subjected to heat treatment within the chamber. Accordingly, dopants within the p-type semiconductor layer can be activated.
  • a method of fabricating a light emitting device includes growing an n-type semiconductor layer, an active layer, an electron blocking layer, and a p-type semiconductor layer on a substrate by metal organic chemical vapor deposition.
  • the p-type semiconductor layer may be grown by the method of growing a p-type semiconductor layer as set forth above and may be grown on the electron blocking layer.
  • a relatively thick undoped layer is disposed between a low concentration doping layer and a high concentration doping layer to increase hole mobility, thereby improving hole injection efficiency of the light emitting device. Furthermore, during growth of the undoped layer, supply of H 2 gas is blocked to further reduce a dopant concentration within the undoped layer, thereby further increasing hole mobility within the undoped layer.
  • FIG. 1 is a schematic sectional view of a light emitting device according to one exemplary embodiment of the present invention.
  • FIG. 2 is a schematic diagram depicting gas and temperature profiles for illustrating a method of growing a p-type semiconductor layer according to one exemplary embodiment of the present invention.
  • FIG. 1 is a schematic sectional view of a light emitting device according to one exemplary embodiment of the present invention.
  • the light emitting device may include a substrate 21 , buffer layer 23 , an n-type semiconductor layer 25 , a superlattice layer 27 , an active layer 29 , an electron blocking layer 31 , and a p-type semiconductor layer 33 .
  • the substrate 21 may be, for example, a patterned sapphire substrate, a spinel substrate, a silicon carbide substrate, or a gallium nitride substrate, without being limited thereto.
  • the buffer layer 23 may include a low temperature buffer layer and a high temperature buffer layer. When the substrate 21 is a gallium nitride, the buffer layer 23 may be omitted.
  • the n-type semiconductor layer 25 includes an n-type contact layer.
  • the n-type semiconductor layer 25 may be formed of an (Al, Ga, In)N-based Group III nitride semiconductor material and may be composed of a single layer or multiple layers.
  • the n-type semiconductor layer 25 includes a GaN layer and may be formed by doping n-type dopants, for example, Si.
  • the superlattice layer 27 may be adopted to improve current spreading and crystal quality of the active layer.
  • the superlattice layer 27 may be formed by repeatedly stacking, for example, GaN/InGaN or InGaN/InGaN layers.
  • the active layer 27 is disposed between the n-type semiconductor layer 25 and the p-type semiconductor layer 33 and may have a single quantum well structure having a single well layer or a multi-quantum well structure wherein well layers and barrier layers are alternately stacked one above another.
  • the well layers may be formed of, for example, InGaN
  • the barrier layers may be formed of a gallium nitride semiconductor, for example, GaN, which has a wider band gap than the well layers.
  • the electron blocking layer 31 is disposed between the active layer 29 and the p-type semiconductor layer 33 , and prevents overflow of electrons from the active layer 29 to the p-type semiconductor layer 33 .
  • the electron blocking layer 31 may be formed of a gallium nitride semiconductor, for example, AlGaN, which typically has a wider band gap than the p-type semiconductor layer 33 .
  • the p-type semiconductor layer 33 includes a low concentration doping layer 33 a, an undoped layer 33 b, and a high concentration doping layer 33 c.
  • the low concentration doping layer 33 a, the undoped layer 33 b and the high concentration doping layer 33 c may be formed of gallium nitride semiconductor materials, for example, GaN, which have the same composition except for dopant concentration. Accordingly, when supplied from an electrode (not shown), holes can pass through the p-type semiconductor layer 33 without an energy barrier.
  • the low concentration doping layer 33 a may be disposed to contact the electron blocking layer 31 .
  • the high concentration doping layer 33 c may be a p-type contact layer which contacts the electrode (not shown).
  • a thickness of the undoped layer 33 b may be greater than the sum of thicknesses of the low concentration doping layer 33 a and the high concentration doping layer 33 c.
  • the low concentration doping layer 33 a may have a thickness of 5 nm to 20 nm
  • the undoped layer 33 b may have a thickness of 60 nm to 110 nm
  • the high concentration doping layer 33 c may have a thickness of 10 nm to 30 nm.
  • the low concentration doping layer 33 a may have a dopant concentration of 1 ⁇ 10 20 /cm 3 to 5 ⁇ 10 20 /cm 3
  • the high concentration doping layer 33 c may have a dopant concentration of 5 ⁇ 10 20 /cm 3 to 1 ⁇ 10 21 /cm 3
  • the undoped layer 33 b may have a dopant concentration of less than 2 ⁇ 10 19 /cm 3
  • the undoped layer 33 b may have a dopant concentration of 1 ⁇ 10 19 /cm 3 to 2 ⁇ 10 19 /cm 3 depending on depth thereof
  • the undoped layer 33 b is formed to a relatively high thickness and the dopant concentration is lowered, the light emitting device has significantly increased hole mobility, thereby improving efficiency in hole injection into the active layer 29 .
  • FIG. 2 is a schematic diagram depicting gas and temperature profiles for illustrating a method of growing the p-type semiconductor layer according to the exemplary embodiment.
  • the p-type semiconductor layer 33 is grown by metal organic chemical vapor deposition
  • the buffer layer 23 , the n-type semiconductor layer 25 , the superlattice layer 27 , the active layer 29 and the electron blocking layer 31 may also be grown in-situ within the same chamber by metal organic chemical vapor deposition.
  • a metal source gas, a nitrogen source gas and a carrier gas or an atmosphere gas are supplied into the chamber to grow semiconductor layers such as the buffer layer 23 , the n-type semiconductor layer 25 , the superlattice layer 27 , the active layer 29 , and the electron blocking layer 31 .
  • a source gas of n-type dopants may be supplied into the chamber as needed.
  • the metal source gas includes a Ga source gas, an Al source gas and/or an In source gas, and a suitable source gas depending upon a metal component of a gallium nitride semiconductor layer to be grown is supplied.
  • a suitable source gas depending upon a metal component of a gallium nitride semiconductor layer to be grown is supplied.
  • TMGa or TEGa may be used as the Ga source gas
  • TMA1 or TEA1 may be used as the Al source gas
  • TMIn or TEIn may be used as the In source gas.
  • NH 3 may be generally used as a nitrogen (N) source gas
  • SiH 4 may be used as the source gas of n-type dopants.
  • N 2 and/or H 2 may be generally used as the carrier gas or the atmosphere gas.
  • the p-type semiconductor layer 33 is grown within the chamber by metal organic chemical vapor deposition.
  • the p-type semiconductor layer 33 may be grown at a pressure of 100 Torr to 300 Torr.
  • the low concentration doping layer 33 a is grown on the electron blocking layer 31 at a temperature of, for example, 970° C. to 990° C.
  • the low concentration doping layer 33 a may be grown by supplying an Mg source gas (for example, Cp2Mg), N 2 gas and H 2 gas together with a nitrogen source gas (for example, NH 3 ) and a gallium source gas (for example, TMGa or TEGa) into the chamber.
  • an Mg source gas for example, Cp2Mg
  • N 2 gas and H 2 gas together with a nitrogen source gas (for example, NH 3 ) and a gallium source gas (for example, TMGa or TEGa) into the chamber.
  • the N 2 gas is supplied at a flow rate of about 30 to 50 L/min
  • the H 2 gas may be supplied at a flow rate of 140 to 160 L/min
  • the NH 3 gas may be supplied at a flow rate of 30 to 50 L/min.
  • the flow rate ratio of N 2 :H 2 :NH 3 may be 1:3:1.
  • the flow rate of the Mg source gas may be determined to achieve a suitable doping concentration, and the low concentration doping layer 33 a may have an Mg doping concentration of about 1E20/cm 3 to 5E20/cm 3 .
  • the undoped layer 33 b is grown at a temperature of, for example, 940° C. to 970° C.
  • the undoped layer 33 b is grown by supplying a nitrogen source gas (for example, NH 3 ), a gallium source gas (for example, TMGa or TEGa) and N 2 gas into the chamber while blocking supply of the Mg source gas and the H 2 gas.
  • a nitrogen source gas for example, NH 3
  • a gallium source gas for example, TMGa or TEGa
  • N 2 gas may be supplied at a flow rate of 140 to 160 L/min
  • the H 2 source gas may be supplied at a flow rate of 0 L/min
  • the NH 3 gas may be supplied at a flow rate of 30 to 50 L/min.
  • the flow rate ratio of N 2 :H 2 :NH 3 may be 3:0:1.
  • Mg is supplied from the low concentration doping layer 33 a to the undoped layer 33 b during growth of the undoped layer 33 b.
  • the inventors of the invention found that supply of H 2 gas during growth of the undoped layer 33 b accelerated supply of Mg. Accordingly, it is possible to reduce the dopant concentration within the undoped layer 33 b by blocking supply of H 2 during growth of the undoped layer 33 b.
  • the dopant concentration of the undoped layer 33 b can be influenced by the doping concentration of the low concentration doping layer 33 a and the high concentration doping layer 33 c, and the undoped layer 33 b may have a doping concentration less than 2 ⁇ 10 19 /cm 3 within the doping concentration of the low concentration doping layer 33 a and the high concentration doping layer 33 b described herein. Furthermore, the dopant concentration of the undoped layer 33 b may range from 1 ⁇ 10 19 /cm 3 to 2 ⁇ 10 19 /cm 3 depending on depth thereof. Such a doping concentration is difficult to achieve by a typical method of growing a p-type semiconductor layer in which H 2 gas is supplied during growth of the undoped layer.
  • the atmosphere of the chamber may be changed to a nitrogen and NH 3 atmosphere before growth of the undoped layer 33 b.
  • a nitrogen source gas and N 2 gas may be supplied into the chamber while blocking supply of a gallium source gas, an Mg source gas and the H 2 gas. Change of the atmosphere within the chamber into the nitrogen and NH 3 atmosphere may be carried out for about 3 to 10 minutes.
  • the high concentration doping layer 33 c may be grown at a temperature of, for example, 910° C. to 940° C.
  • the high concentration doping layer 33 c is grown on the undoped layer 33 b by supplying a nitrogen source gas (for example, NH 3 ), a gallium source gas (for example, TMGa or TEGa), an Mg source gas (for example, Cp2Mg), N 2 gas and H 2 gas into the chamber.
  • a nitrogen source gas for example, NH 3
  • a gallium source gas for example, TMGa or TEGa
  • an Mg source gas for example, Cp2Mg
  • N 2 gas may be supplied at a flow rate of 30 to 50 L/min
  • the H 2 gas may be supplied at a flow rate of 140 to 160 L/min
  • the NH 3 gas may be supplied at a flow rate of 30 to 50 L/min.
  • the flow rate ratio of N 2 :H 2 :NH 3 may be 1:3:1, and the high concentration doping layer 33 c may be grown under the same conditions as the low concentration doping layer 33 b except for the flow rate of the Mg source gas.
  • the flow rate of the Mg source gas may be determined to achieve a suitable doping concentration and the low concentration doping layer 33 a may have an Mg doping concentration of about 5 ⁇ 10 20 /cm 3 to 1 ⁇ 10 21 /cm 3 .
  • the temperature of the chamber is decreased to about 700° C. to 800° C. and the p-type semiconductor layer 33 is subjected to heat treatment in a N 2 atmosphere.
  • the dopant concentration of the undoped layer 33 b can be decreased by blocking supply of H 2 gas during growth of the undoped layer 33 b. Furthermore, during growth of the low concentration doping layer 33 a and the high concentration doping layer 33 c, N 2 gas and H 2 gas may be supplied, thereby preventing deterioration in crystal quality of the p-type semiconductor layer 33 .
  • a support substrate (not shown) may be formed on an upper surface of the p-type semiconductor layer 33 and the substrate 21 may be removed, thereby providing a light emitting device, for example, a vertical type light emitting diode chip, from which the growth substrate is removed.
  • the light emitting diode chip fabricated by blocking supply of H 2 during growth of the undoped layer 33 b had about 10% higher light output than the reference sample.
  • the Mg doping profiles of the samples fabricated in the experimental example were subjected to SIMS analysis under the same conditions.
  • a significant Mg doping concentration of about 3 ⁇ 10 19 /cm 3 or more was observed in the undoped layer 33 b near the boundary between the low concentration doping layer 33 a and the undoped layer 33 b, and it was also observed that the Mg doping concentration exhibited a tendency of gradually increasing from the boundary between the high concentration doping layer 33 c and the undoped layer 33 b to the boundary between the low concentration doping layer 33 a and the undoped layer 33 b, and the Mg doping concentration in the undoped layer 33 b was in the range of about 8E18/cm 3 to about 3E19/cm 3 depending upon the depth thereof
  • the Mg doping concentration in the undoped layer 33 b was in the range of 1E19/cm 3 to 2E19/cm 3 depending upon the length thereof
  • the introduction of Mg from the low concentration doping layer 33 a to the undoped layer 33 b can be suppressed by blocking supply of H 2 gas during growth of the undoped layer 33 b , thereby decreasing the Mg doping concentration in the undoped layer 33 b . Furthermore, it is anticipated that reduction of the Mg doping concentration in the undoped layer 33 b will improve hole mobility, thereby improving light output through improvement in hole injection efficiency.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
US14/893,466 2013-05-22 2014-04-08 Light emitting device and method for preparing the same Abandoned US20160104816A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020130057847A KR102160068B1 (ko) 2013-05-22 2013-05-22 발광 소자 및 그것을 제조하는 방법
KR10-2013-0057847 2013-05-22
PCT/KR2014/003032 WO2014189207A1 (fr) 2013-05-22 2014-04-08 Elément électroluminescent et son procédé de préparation

Publications (1)

Publication Number Publication Date
US20160104816A1 true US20160104816A1 (en) 2016-04-14

Family

ID=51933736

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/893,466 Abandoned US20160104816A1 (en) 2013-05-22 2014-04-08 Light emitting device and method for preparing the same

Country Status (5)

Country Link
US (1) US20160104816A1 (fr)
EP (1) EP3001465B1 (fr)
KR (1) KR102160068B1 (fr)
CN (2) CN110246938B (fr)
WO (1) WO2014189207A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018039236A1 (fr) * 2016-08-22 2018-03-01 The Regents Of The University Of California Hétérostructure semi-conductrice avec incorporation réduite d'impuretés de calcium non intentionnelles
CN110635007A (zh) * 2019-09-12 2019-12-31 佛山市国星半导体技术有限公司 一种抗静电外延结构及其制备方法
JP2020194837A (ja) * 2019-05-27 2020-12-03 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
US20210143264A1 (en) * 2017-08-25 2021-05-13 Enkris Semiconductor, Inc. Method for preparing a p-type semiconductor layer, enhanced device and method for manufacturing the same
CN117174802A (zh) * 2023-11-02 2023-12-05 江西兆驰半导体有限公司 发光二极管的外延结构及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977358B (zh) * 2016-05-17 2018-06-26 华灿光电(苏州）有限公司 一种发光二极管外延片及其制作方法
CN111341888B (zh) * 2020-03-07 2021-10-08 江苏太德光电科技有限公司 户外照明光源光效提高方法
US20230282764A1 (en) * 2022-02-07 2023-09-07 Seoul Viosys Co., Ltd. Light emitting diode having improved hole injection structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070096077A1 (en) * 2005-10-31 2007-05-03 Nichia Corporation Nitride semiconductor device
US20100133506A1 (en) * 2007-06-15 2010-06-03 Rohm Co., Ltd. Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor
US8268706B2 (en) * 2009-04-08 2012-09-18 Panasonic Corporation Semiconductor device manufacturing method
US20130234110A1 (en) * 2011-04-12 2013-09-12 Panasonic Corporation Gallium nitride based compound semiconductor light-emitting element and method for fabricating the same
US20140014997A1 (en) * 2012-02-28 2014-01-16 Panasonic Corporation Nitride semiconductor light-emitting element and light source including the nitride semiconductor light-emitting element
US20160056334A1 (en) * 2014-08-19 2016-02-25 Seoul Viosys Co., Ltd. Light emitting device and method of fabricating the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258617B1 (en) * 1995-08-31 2001-07-10 Kabushiki Kaisha Toshiba Method of manufacturing blue light emitting element
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
JP4617922B2 (ja) * 2005-02-25 2011-01-26 ソニー株式会社 半導体装置の製造方法
JP2007027248A (ja) * 2005-07-13 2007-02-01 Kyocera Corp ｐ型ＩＩＩ族窒化物半導体層の製造方法および発光素子
US8158990B2 (en) * 2006-10-05 2012-04-17 Mitsubishi Chemical Corporation Light emitting device using GaN LED chip
CN101330118B (zh) * 2007-06-22 2010-06-09 晶能光电（江西）有限公司 用于制造p型半导体结构的方法
KR100838196B1 (ko) * 2007-07-20 2008-06-13 서울옵토디바이스주식회사 개선된 구조를 갖는 발광 다이오드
KR100877774B1 (ko) * 2007-09-10 2009-01-16 서울옵토디바이스주식회사 개선된 구조의 발광다이오드
KR101047691B1 (ko) * 2008-12-12 2011-07-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN102859723B (zh) * 2010-02-19 2015-09-09 夏普株式会社 氮化物半导体发光元件及氮化物半导体发光元件的制造方法
US20120107991A1 (en) * 2010-10-21 2012-05-03 The Regents Of The University Of California Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices
KR20120100056A (ko) * 2011-03-02 2012-09-12 엘지이노텍 주식회사 발광 소자
JP5996846B2 (ja) * 2011-06-30 2016-09-21 シャープ株式会社 窒化物半導体発光素子およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070096077A1 (en) * 2005-10-31 2007-05-03 Nichia Corporation Nitride semiconductor device
US20100133506A1 (en) * 2007-06-15 2010-06-03 Rohm Co., Ltd. Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor
US8268706B2 (en) * 2009-04-08 2012-09-18 Panasonic Corporation Semiconductor device manufacturing method
US20130234110A1 (en) * 2011-04-12 2013-09-12 Panasonic Corporation Gallium nitride based compound semiconductor light-emitting element and method for fabricating the same
US20140014997A1 (en) * 2012-02-28 2014-01-16 Panasonic Corporation Nitride semiconductor light-emitting element and light source including the nitride semiconductor light-emitting element
US20160056334A1 (en) * 2014-08-19 2016-02-25 Seoul Viosys Co., Ltd. Light emitting device and method of fabricating the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018039236A1 (fr) * 2016-08-22 2018-03-01 The Regents Of The University Of California Hétérostructure semi-conductrice avec incorporation réduite d'impuretés de calcium non intentionnelles
US20210143264A1 (en) * 2017-08-25 2021-05-13 Enkris Semiconductor, Inc. Method for preparing a p-type semiconductor layer, enhanced device and method for manufacturing the same
US11646357B2 (en) * 2017-08-25 2023-05-09 Enkris Semiconductor, Inc. Method for preparing a p-type semiconductor structure, enhancement mode device and method for manufacturing the same
JP2020194837A (ja) * 2019-05-27 2020-12-03 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
US11355662B2 (en) * 2019-05-27 2022-06-07 Nichia Corporation Method of manufacturing nitride semiconductor light emitting element
JP7140978B2 (ja) 2019-05-27 2022-09-22 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
CN110635007A (zh) * 2019-09-12 2019-12-31 佛山市国星半导体技术有限公司 一种抗静电外延结构及其制备方法
CN117174802A (zh) * 2023-11-02 2023-12-05 江西兆驰半导体有限公司 发光二极管的外延结构及其制备方法

Also Published As

Publication number Publication date
EP3001465A1 (fr) 2016-03-30
KR20140137208A (ko) 2014-12-02
EP3001465A4 (fr) 2017-01-04
CN110246938A (zh) 2019-09-17
EP3001465B1 (fr) 2019-06-12
WO2014189207A1 (fr) 2014-11-27
CN105229804A (zh) 2016-01-06
CN105229804B (zh) 2019-06-18
CN110246938B (zh) 2022-06-28
KR102160068B1 (ko) 2020-09-25

Similar Documents

Publication Publication Date Title
KR102494071B1 (ko) 발광 소자 및 그것을 제조하는 방법
US11024769B2 (en) Group III nitride semiconductor light-emitting element and method of manufacturing same
KR102618238B1 (ko) 질화물 반도체 발광소자
KR101691906B1 (ko) Ⅲ족 질화물 나노로드 발광 소자 제조방법
EP3001465B1 (fr) Elément électroluminescent et son procédé de préparation
US6720570B2 (en) Gallium nitride-based semiconductor light emitting device
KR102191213B1 (ko) 자외선 발광 소자
CN106159048A (zh) 一种发光二极管外延片及其生长方法
CN106876530B (zh) 一种氮化镓基发光二极管的外延片及其制作方法
KR101692181B1 (ko) 질화물 반도체 발광소자 및 그 제조 방법
KR20090030652A (ko) 질화물계 발광소자
KR101669638B1 (ko) n형 질화물 반도체층의 성장 방법, 발광 다이오드 및 그 제조 방법
KR102553985B1 (ko) Ⅲ족 질화물 반도체
KR20130015112A (ko) 발광 다이오드 및 그것을 제조하는 방법
KR102359845B1 (ko) 발광 소자 및 그것을 제조하는 방법
KR20060007123A (ko) n형 질화물층의 전도도를 제어하는 방법
KR100881053B1 (ko) 질화물계 발광소자
KR100962946B1 (ko) 질화물 반도체 발광소자 및 그 제조방법
KR101172059B1 (ko) 질화물 반도체 발광소자 및 그 제조방법
US20240120440A1 (en) Semiconductor structure
KR101373804B1 (ko) 백색 발광다이오드 및 그 제조방법
KR101910563B1 (ko) 전자 블록층을 갖는 질화물 반도체 소자 및 전자 블록층 성장 방법
US8470626B2 (en) Method of fabricating light emitting diode
KR20150123538A (ko) 질화물 반도체 성장 방법 및 이를 이용하여 제조된 발광소자

Legal Events

Date Code Title Description
AS Assignment

Owner name: SEOUL VIOSYS CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:AN, SOON HO;HAN, CHANG SUK;YUN, JUN HO;AND OTHERS;SIGNING DATES FROM 20151111 TO 20151118;REEL/FRAME:037253/0487

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION