US20120274526A1 - Line Conversion Structure and Antenna Using the Same - Google Patents

Line Conversion Structure and Antenna Using the Same Download PDF

Info

Publication number
US20120274526A1
US20120274526A1 US13/318,334 US201013318334A US2012274526A1 US 20120274526 A1 US20120274526 A1 US 20120274526A1 US 201013318334 A US201013318334 A US 201013318334A US 2012274526 A1 US2012274526 A1 US 2012274526A1
Authority
US
United States
Prior art keywords
slot
conductor
ground
line
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/318,334
Other languages
English (en)
Inventor
Shinichi Koriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Assigned to KYOCERA CORPORATION reassignment KYOCERA CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KORIYAMA, SHINICHI
Publication of US20120274526A1 publication Critical patent/US20120274526A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/1007Microstrip transitions to Slotline or finline
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107Hollow-waveguide/strip-line transitions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10Resonant slot antennas

Definitions

  • the present invention relates to a line conversion structure in which a high-frequency transmission line formed in a dielectric layer is converted into a slot line, and in particular to a line conversion structure suitable for interlayer connection in a transmission line, connection to an antenna, connection to a waveguide, or the like in a semiconductor element storage package or a wiring board that is preferable for housing or mounting semiconductor elements intended for high frequencies ranging from microwave to millimeter-wave frequency bands, and to an antenna using such a line conversion structure.
  • high-frequency elements semiconductor elements for high frequencies (hereinafter simply referred to as “high-frequency elements”) used in such an applied system or the like are housed/mounted, interlayer connection in a transmission line or connection to an antenna, for example, is in many cases established via a slot line.
  • Patent Literature 1 A wiring board disclosed in Patent Literature 1 is known as an example of a wiring board using such transmission line connection via a slot line.
  • a microstrip line configured in an upper dielectric layer and an output microstrip line configured in a lower dielectric layer are connected at high frequencies with electromagnetic coupling via a slot provided between the dielectric layers.
  • the characteristic of the electromagnetic coupling between the microstrip lines and the slot in such a wiring board varies depending on a stub length and a slot length, the stub length being a length from an open end of each microstrip line to the center of the slot.
  • the variation in the slot length is determined by only the variation in print dimensions and is thus relatively small.
  • the variation in the stub length readily increases due to the variation in print position in forming the microstrip lines, the variation in print position in forming the slot, and layer-to-layer misalignment in laminating the upper and lower dielectric layers, which results in the problem that there is variation in the characteristic of the electromagnetic coupling between the microstrip lines and the slot.
  • a wiring board disclosed in Patent Literature 2 is also known as an example of a line conversion structure in which a line for transmitting high frequencies is converted into a slot line.
  • This example gives a wiring board for connecting a coplanar line to a dielectric waveguide via a slot formed in the same plane as the coplanar line.
  • the variation in the stub length is relatively small because it depends only on the variation in print dimensions without experiencing the influence of the variation in print position and the layer-to-layer misalignment as described in the above case. Accordingly, the variation in the characteristic of the conversion from the coplanar line to the slot is reduced.
  • a wiring board disclosed in Patent Literature 3 is known as an example of a line conversion structure in which a microstrip line is converted into a coplanar line.
  • This example gives a wiring board in which the conversion into a coplanar line is achieved by, while reducing the width of a signal conductor of the microstrip line, forming a ground conductor on both sides of the signal conductor with a gap provided between the ground conductors and the signal conductor, and reducing these gaps so as to make the impedance constant.
  • a line conversion structure is a line conversion structure for converting a high-frequency transmission line into a slot line.
  • the high-frequency transmission line includes a dielectric layer, a signal conductor disposed on an upper surface of the dielectric layer, and a ground layer disposed on a lower surface of the dielectric layer.
  • the slot line includes a slot ground conductor, a slot signal conductor, and a slot.
  • the slot ground conductor is disposed on the upper surface of the dielectric layer and connected to the ground layer with a through conductor that passes through the dielectric layer.
  • the slot signal conductor is disposed on the upper surface of the dielectric layer.
  • the slot is disposed between the slot ground conductor and the slot signal conductor.
  • the signal conductor of the high-frequency transmission line is orthogonal to the slot ground conductor and the slot, with a gap between the signal conductor and the slot ground conductor, and an end of the signal conductor is connected to the slot signal conductor.
  • a length of a portion of the slot ground conductor, the portion being parallel to the signal conductor with the gap, is less than or equal to 0.25 time a wavelength of a signal transmitted through the high-frequency transmission line.
  • An antenna according to an embodiment of the invention includes the above-described line conversion structure in which both end portions of the slot are closed, a lower dielectric layer, a lower ground layer, a first opening, a second opening, and a plurality of shield conductors.
  • the lower dielectric layer is formed on the lower surface of the dielectric layer.
  • the lower ground layer is formed on a lower surface of the lower dielectric layer.
  • the first opening is formed in a portion of the ground layer that faces the slot.
  • the second opening is formed in a portion of the lower ground layer that faces the slot.
  • the plurality of shield conductors are configured to surround the first opening and the second opening in a plan view, and to connect the ground layer and the lower ground layer.
  • the signal conductor of the high-frequency transmission line is orthogonal to the slot ground conductor and the slot, with a gap between the signal conductor and the slot ground conductor, an end of the signal conductor is connected to the slot signal conductor, and the length of the portion of the slot ground conductor, the portion being parallel to the signal conductor with the gap, is less than or equal to 0.25 times the wavelength of the signal transmitted through the high-frequency transmission line. Accordingly, in the portion where the signal conductor is orthogonal to the slot ground conductor with a gap between the signal conductor and the slot ground conductor, no transition to a coplanar line transmission mode occurs, and the high-frequency transmission line can be converted directly into the slot line. This also produces no resonance, thus achieving a line conversion structure with a small loss in conversion.
  • the antenna according to the embodiment of the invention includes the line conversion structure of the above embodiment of the invention, in which both end portions of the slot are closed, the lower dielectric layer, the lower ground layer, the first opening, the second opening, and the plurality of shield conductors.
  • signals that have been transmitted through the high-frequency transmission line are stored efficiently in the slot line as signal energy, and of the lower dielectric layer disposed on the underside of the slot, a portion that is surrounded by the shield conductors functions as a dielectric matching unit that achieves high-frequency matching between the slot and a space located on the underside of the lower dielectric layer. Accordingly, it is possible to emit signals through the first opening and the second opening to the space with a small loss (high efficiency).
  • FIG. 1A is a schematic perspective view for illustrating an example of a line conversion structure according to an embodiment of the invention
  • FIG. 1B is a schematic plan view for illustrating an example of the line conversion structure according to the embodiment of the invention.
  • FIG. 1C is a schematic cross-sectional view taken along the line A-A indicated in FIG. 1A for illustrating an example of the line conversion structure according to the embodiment of the invention
  • FIG. 1D is a schematic cross-sectional view taken along the line B-B indicated in FIG. 1A for illustrating an example of the line conversion structure according to the embodiment of the invention
  • FIG. 2A is a schematic perspective view for illustrating another example of the line conversion structure according to the embodiment of the invention.
  • FIG. 2B is a schematic plan view for illustrating another example of the line conversion structure according to the embodiment of the invention.
  • FIG. 20 is a schematic cross-sectional view taken along the line A-A indicated in FIG. 2A for illustrating another example of the line conversion structure according to the embodiment of the invention.
  • FIG. 3A is a schematic perspective view for illustrating still another example of the line conversion structure according to the embodiment of the invention.
  • FIG. 3B is a schematic plan view for illustrating still another example of the line conversion structure according to the embodiment of the invention.
  • FIG. 3C is a schematic cross-sectional view taken along the line A-A indicated in FIG. 3B for illustrating still another example of the line conversion structure according to the embodiment of the invention
  • FIG. 4A is a schematic perspective view for illustrating still another example of the line conversion structure according to the embodiment of the invention.
  • FIG. 4B a schematic plan view for illustrating still another example of the line conversion structure according to the embodiment of the invention.
  • FIG. 4C a schematic cross-sectional view taken along the line A-A indicated in FIG. 4A for illustrating still another example of the line conversion structure according to the embodiment of the invention
  • FIG. 5A is a schematic plan view for illustrating still another example of the line conversion structure according to the embodiment of the invention.
  • FIG. 5B is a schematic cross-sectional view taken along the line A-A indicated in FIG. 5A for illustrating still another example of the line conversion structure according to the embodiment of the invention
  • FIG. 5C is a schematic cross-sectional view taken along the line B-B indicated in FIG. 5A for illustrating still another example of the line conversion structure according to the embodiment of the invention.
  • FIG. 6A is a schematic plan view for illustrating an example of an antenna according to an embodiment of the invention.
  • FIG. 6B is a schematic cross-sectional view taken along the line A-A indicated in FIG. 6A for illustrating an example of the antenna according to the embodiment of the invention
  • FIG. 6C is a schematic bottom view for illustrating an example of an antenna according to the embodiment of the invention.
  • FIG. 7A is a schematic plan view for illustrating another example of the antenna according to the embodiment of the invention.
  • FIG. 7B is a schematic cross-sectional view taken along the line A-A indicated in FIG. 7A for illustrating another example of the antenna according to the embodiment of the invention.
  • FIG. 7C is a schematic cross-sectional view taken along the line B-B indicated in FIG. 7A ;
  • FIG. 8 is a graph showing a frequency characteristic of a loss caused between a microstrip line and an output microstrip line, as a result of simulations for verifying an effect of the line conversion structure of the embodiment;
  • FIG. 9 is a graph showing a relationship between a loss and a length of a portion of the slot ground conductor which portion is parallel to a signal conductor with a gap in between, as a result of simulations for verifying an effect of the line conversion structure of the embodiment;
  • FIG. 10 is a graph showing a relationship between a loss and a distance between the signal conductor and the through conductor, as a result of simulations for verifying an effect of the line conversion structure of the embodiment.
  • FIG. 11 is a graph showing simulation results for a reflection of the antenna of the embodiment.
  • FIG. 12 is a graph showing the relationship between a gain of the antenna and a slot pattern width in a case where no ground-reinforcing conductors are formed;
  • FIG. 13A is a graph showing a simulation result for a gain of the antenna in Test Cases 1;
  • FIG. 13B is a graph showing a simulation result for a gain of the antenna in Test Cases 3;
  • FIG. 13C is a graph showing a simulation result for a gain of the antenna in Test Cases 5;
  • FIG. 14 is a graph showing a relationship between a gain of the antenna and a clearance between ground-reinforcing conductors and end portions of the slot;
  • FIG. 15A is a graph showing a simulation result for a gain of the antenna in Test Cases 6;
  • FIG. 15B is a graph showing a simulation result for a gain of the antenna in Test Cases 7;
  • FIG. 15C is a graph showing a simulation result for a gain of the antenna in Test Cases 8.
  • FIG. 16 is a graph showing a simulation result for a gain of the antenna in Test Case 11.
  • FIGS. 1A to 5C the dielectric layer 2 , the lower dielectric layer 2 a , and the upper dielectric layer 10 or 16 are shown in a see-through manner in FIGS. 1A to 5C .
  • the dashed dotted line in FIG. 1B indicates a center line of the slot 9 in the widthwise direction.
  • FIGS. 1A to 1D are schematic diagrams for illustrating an example of the line conversion structure according to the embodiment of the invention, FIG. 1A being a perspective view, FIG. 1B being a plan view, FIG. 1C being a cross-sectional view taken along the line A-A indicated in FIG. 1A , and FIG. 1D being a cross-sectional view taken along the line B-B indicated in FIG. 1A .
  • the microstrip line 1 includes the dielectric layer 2 , the signal conductor 3 disposed on an upper surface of the dielectric layer 2 , and the ground layer 4 disposed on a lower surface of the dielectric layer 2 as in the example shown in FIGS. 1A to 1D .
  • the slot line 5 includes the slot ground conductor 7 , the slot signal conductor 8 , and the slot 9 .
  • the slot ground conductor 7 is disposed on the upper surface of the dielectric layer 2 and connected to the ground layer 4 with the through conductors 6 that pass through the dielectric layer 2 .
  • the slot signal conductor 8 is disposed on the upper surface of the dielectric layer 2 .
  • the slot 9 is disposed between the slot ground conductor 7 and the slot signal conductor 8 .
  • the signal conductor 3 of the microstrip line 1 is orthogonal to the slot ground conductor 7 and the slot 9 , with a gap between the signal conductor 3 and the slot ground conductor 7 , and one end of the signal conductor 3 is connected to the slot signal conductor 8 .
  • the length of a portion of the slot ground conductor 7 (indicated by L in FIG. 1B ), the portion being parallel to the signal conductor 3 with a gap, is less than or equal to 0.25 times the wavelength of signals transmitted through the microstrip line 1 .
  • a distance (indicated by D in FIG. 1B ) between the signal conductor 3 and a through conductor 6 that is located closest to the portion of the slot ground conductor 7 , the portion being parallel to the signal conductor 3 with a gap in between, is less than or equal to 0.13 times the wavelength of signals transmitted through the microstrip line 1
  • the distance from the ground layer 4 located immediately under the signal conductor 3 of the microstrip line 1 via that through conductor 6 to the slot ground conductor 7 is sufficiently short. This allows the ground potential of the microstrip line 1 to be transmitted to the slot ground conductor 7 without delay, thus further reducing the loss in conversion from the microstrip line 1 to the slot line 5 .
  • FIGS. 2A to 2C are schematic diagrams for illustrating another example of the line conversion structure according to the embodiment of the invention, FIG. 2A being a perspective view, FIG. 2B being a plan view, and FIG. 20 being a cross-sectional view taken along the line A-A indicated in FIG. 2A .
  • the slot ground conductor 7 has a greater width and the through conductors 6 that connect the slot ground conductor 7 and the ground layer 4 have a greater diameter than in the example shown in FIGS. 1A to 1D .
  • a length L of only the portion of the slot ground conductor 7 , the portion being parallel to the signal conductor 3 with a gap, is made less than or equal to 0.25 times the wavelength of signals transmitted through the microstrip line 1 .
  • the width of the portion of the slot ground conductor 7 which portion is farther from the gap is greater than the width of the portion of the slot ground conductor 7 which portion is parallel to the signal conductor 3 with the gap in between.
  • FIGS. 3A to 3C are schematic diagrams for illustrating still another example of the line conversion structure according to the embodiment of the invention, FIG. 3A being a perspective view, FIG. 3B being a plan view, and FIG. 3C being a cross-sectional view taken along the line A-A indicated in FIG. 3B .
  • an upper ground layer 11 is formed via an upper dielectric layer 10 on the dielectric layer 2 so as to cover a portion of the signal line 3 which portion is orthogonal to the slot line 5 and a gap therebetween, as well as a portion of the slot line 5 between the gap and the slot signal conductor 8 , that is, to cover a line conversion unit.
  • the line conversion unit in the line conversion structure of the embodiment is a portion where an electromagnetic field mode of signals transmitted through a microstrip line 1 is converted directly into an electromagnetic field mode of signals transmitted through the slot line 5 .
  • the electromagnetic field mode of that portion is thus more complex than the electromagnetic field mode of signals transmitted through a simple transmission line, and the line conversion unit has a structure susceptible to the influence of the emission to the outside or the incidence from the outside.
  • covering the line conversion unit with the upper ground layer 11 achieves an effective reduction in the influence of the emission to the outside or the incidence from the outside.
  • the upper ground layer 11 is formed only over the line conversion unit in the example shown in FIGS. 3A to 3C , it is preferable that the upper ground layer 11 to be formed is larger than the line conversion unit in a plan view because this further enhances the above-described shield effect, and in the case of creating a wiring board or the like that includes the line conversion structure of the embodiment, allows the line conversion unit to be reliably covered even if there is somewhat of a shift in the position of the upper ground layer 11 . Furthermore, if the entire upper surface of the dielectric layer 2 is covered with the upper ground layer 11 via the upper dielectric layer 10 , the line conversion unit is completely shielded from above and below by the upper ground layer 11 located above and the ground layer 4 located below.
  • multiple through conductors 6 may be provided in a line in the lengthwise direction of a slot ground conductor 7 (in a direction away from the gap). By doing so, it is possible to allow the through conductors 6 to pass through the dielectric layer 2 , and thus suppress the incidence of noise from the outside to a slot 9 and the line conversion unit.
  • a slot pattern conductor 9 a is disposed on the upper surface of the dielectric layer 2 so as to close at least one end portion of the slot 9 , it is possible to change the direction of signal transmission to the desired direction. For example, if the slot pattern conductor 9 a is disposed so as to close only one end portion of the slot 9 as in the example shown in FIGS. 2A to 2C , signals will be totally reflected at that closed end portion and transmitted to the other end portion of the slot 9 . Thus, signals transmitted through the microstrip line 1 can be transmitted toward the desired one end portion of the slot 9 .
  • FIGS. 4A to 4C are schematic diagrams for illustrating still another example of the line conversion structure according to the embodiment of the invention, FIG. 4A being a perspective view, FIG. 4B being a plan view, and FIG. 4C being a cross-sectional view taken along the line A-A indicated in FIG. 4A . If two slot pattern conductors 9 a are disposed so as to close both end portions of a slot 9 as in the example shown in FIGS.
  • signals transmitted through a microstrip line 1 are temporarily stored in a slot line 5 as energy and transmitted, for example through a first opening 4 a of a ground layer 4 formed on a lower surface of a dielectric layer 2 , to another transmission line such as an output microstrip line 13 configured by the ground layer 4 , a lower dielectric layer 2 a formed therebelow, and an output signal conductor 12 formed on a lower surface of the lower dielectric layer 2 a , or to an antenna, a waveguide, or the like that is disposed in a direction vertical to the slot.
  • signals can be transmitted via the slot line 5 to an external element with electromagnetic coupling.
  • FIGS. 5A to 5C are schematic diagrams for illustrating still another example of the line conversion structure according to the embodiment of the invention, FIG. 5A being a plan view, FIG. 5B being a cross-sectional view taken along the line A-A indicated in FIG. 5A , and FIG. 5C being a cross-sectional view taken along the line B-B indicated in FIG. 5A .
  • a strip line 18 serving as a high-frequency transmission line is converted into a slot line 5 .
  • FIGS. 5A a strip line 18 serving as a high-frequency transmission line
  • the strip line 18 includes an upper dielectric layer 16 , an upper ground layer 17 disposed on an upper surface of the upper dielectric layer 16 , a dielectric layer 2 , a signal conductor 3 disposed on an upper surface of the dielectric layer 2 , and a ground layer 4 disposed on a lower surface of the dielectric layer 2 .
  • the slot line 5 includes a slot ground conductor 7 , a slot signal conductor 8 , and a slot 9 .
  • the slot ground conductor 7 is disposed on the upper surface of the dielectric layer 2 and connected to the ground layer 4 with through conductors 6 that pass through the dielectric layer 2 .
  • the slot signal conductor 8 is disposed on the upper surface of the dielectric layer 2 .
  • the slot 9 is disposed between the slot ground conductor 7 and the slot signal conductor 8 .
  • the signal conductor 3 of the strip line 18 is orthogonal to the slot ground conductor 7 and the slot 9 , with a gap provided between the signal conductor 3 and the slot ground conductor 7 , and the end of the signal conductor 3 is connected to the slot signal conductor 8 .
  • slot pattern conductors 9 a are disposed on the upper surface of the dielectric layer 2 so as to close both end portions of the slot 9 .
  • the length of a portion of each slot pattern conductor 9 a is less than or equal to 0.25 times the wavelength of signals transmitted through the strip line 18 .
  • a ground-reinforcing conductor 6 a that passes through the dielectric layer 2 and connects the slot ground conductor 7 and the ground layer 4 is formed in a region that extends from each end portion of the slot 9 in a direction away from the signal conductor 3 and ranges within 0.25 times the wavelength of signals transmitted through the strip line 18 .
  • the ground-reinforcing conductors 6 a are provided such that clearance G between the ground-reinforcing conductors 6 a and the ends of the slot 9 is less than or equal to 0.25 times the wavelength of signals transmitted through the strip line 18 .
  • This enables the potential at the end portions of the slot 9 on the slot ground conductor 7 side to be close to the ground potential.
  • Resultant short circuiting of the potential of the slot signal conductor 8 and the ground potential of the slot ground conductor 7 at the end portions of the slot 9 makes symmetrical the distributions of currents flowing through the respective conductors and accordingly makes symmetrical the electromagnetic fields that depend on the current distributions. This enables suppression of unnecessary signal emissions, thus suppressing a reduction in gain in the case where the line conversion structure is used in an antenna.
  • the upper ground layer 17 enables suppression of signal emissions from above to the outside, thus suppressing a reduction in gain in the case where the line conversion structure is used in an antenna.
  • upper ground-reinforcing conductors 6 b that pass through the upper dielectric layer 16 and connect the slot ground conductor 7 and the upper ground layer 17 .
  • the provision of the upper ground-reinforcing conductors 6 b in this way enables the potential at the end portions of the slot 9 on the slot ground conductor 7 side to be closer to the ground potential, thus further suppressing a reduction in gain.
  • signals transmitted through the strip line 18 are temporarily stored in the slot line 5 as energy and transmitted, for example through a first opening 4 a of the ground layer 4 formed on the lower surface of the dielectric layer 2 , to another transmission line such as an output microstrip line 13 configured by the ground layer 4 , a lower dielectric layer 2 a formed therebelow, and an output signal conductor 12 formed on the lower surface of the lower dielectric layer 2 a , or to an antenna, a waveguide, or the like that is disposed in a direction vertical to the slot 9 .
  • signals can be transmitted via the slot line 5 to an external element with electromagnetic coupling.
  • a low-loss antenna can be configured.
  • FIGS. 6A to 6C are schematic diagrams for illustrating an example of an antenna according to an embodiment of the invention, FIG. 6A being a plan view, FIG. 6B being a cross-sectional view taken along the line A-A indicated in FIG. 6A , and FIG. 60 being a bottom view.
  • a lower ground layer 14 , a second opening 14 a formed in the lower ground layer 14 , and shield conductors 15 are shown in FIGS. 6A to 6C , and other reference numerals denote components that are the same as those shown in FIGS. 1A to 5C .
  • the dielectric layer 2 and the lower dielectric layer 2 a are shown in a see-through manner in FIGS. 6A to 6C , as in FIGS. 1A to 50 .
  • the antenna in the example shown in FIGS. 6A to 6C includes a line conversion structure having one of the configurations shown in FIGS. 1A to 4C , in which both end portions of the slot 9 are closed, the lower dielectric layer 2 a , the lower ground layer 14 , the first opening 4 a , the second opening 14 a , and the plurality of shield conductors 15 .
  • the lower dielectric layer 2 a is formed on the lower surface of the dielectric layer 2 .
  • the lower ground layer 14 is formed on the lower surface of the lower dielectric layer 2 a .
  • the first opening 4 a is formed in a portion of the ground layer 4 that faces the slot 9 .
  • the second opening 14 a is formed in a portion of the lower ground layer 14 that faces the slot 9 .
  • the plurality of shield conductors 15 are configured to surround the first opening 4 a and the second opening 14 a in a plan view, and connect the ground layer 4 and the lower ground layer 14 .
  • the antenna configured in this way, signals transmitted through the microstrip line 1 is efficiently stored in the slot line 5 as signal energy, and out of the lower dielectric layer 2 a that is disposed on the underside of the slot 9 , the portion surrounded by the shield conductors 15 functions as a dielectric matching unit that achieves high-frequency matching between the slot 9 and a space below the lower dielectric layer 2 a . It is thus possible to emit signals through the first opening 4 a and the second opening 14 a into the space with a small loss (high efficiency).
  • the antenna will also achieve a smaller loss (higher efficiency).
  • a loss in conversion from the microstrip line 1 to the slot line 5 is further reduced if the length (indicated by in FIG. 1B ) of a portion of the slot ground conductor 7 , the portion being parallel to the signal conductor 3 with a gap, is less than or equal to 0.25 times the wavelength of signals transmitted through the microstrip line 1 and if the distance (indicated by D in FIG.
  • the antenna with such a configuration can efficiently emit high-frequency signals. Furthermore, with the antenna in the example shown in FIGS.
  • the antenna with such a configuration will be a lower-loss (more highly efficient) antenna, or a noise-resistant antenna.
  • the antenna with such a configuration is a more highly efficient antenna that is capable of suppressing the occurrence of unnecessary resonance in the dielectric matching unit due to a disturbed electromagnetic field mode.
  • the thickness of the lower dielectric layer 2 a is set to one fourth the wavelength of signals in the lower dielectric layer 2 a , so that the portion of the lower dielectric layer 2 a that is surrounded by the shield conductors 15 functions as a dielectric matching unit that achieves impedance matching between the slot 9 and a space below the lower dielectric layer 2 a into which signals are to be emitted. Since the wavelength of signals in the lower dielectric layer 2 a varies depending on the frequency of signals transmitted through the microstrip line 1 and the effective dielectric constant of the lower dielectric layer 2 a , the thickness of the lower dielectric layer 2 a is set in accordance therewith.
  • the plurality of shield conductors 15 are formed in the lower dielectric layer 2 a and arranged so as to surround the first opening 4 a and the second opening 14 a in a plan view. Each of the shield conductors 15 connects the ground layer 4 and the lower ground layer 14 .
  • the shield conductors 15 are preferably arranged in close proximity outside the second opening. Since signals that have passed through the first opening 4 a pass through the portion surrounded by the shield conductors 15 , if a portion of the lower ground layer 14 that is located inside the shield conductors 15 is made smaller, it is possible to suppress interference with signal emissions in that portion. More preferably, the shield conductors 15 may be arranged adjacently outside the second opening 14 a . In this case, the lower ground layer 14 will not interfere with signal emissions because there is almost no lower ground layer 14 inside the shield conductors 15 .
  • the distances between the plurality of shield conductors 15 are preferably less than or equal to one fourth the wavelength of signals transmitted through the dielectric matching unit, so as to avoid leakage of high-frequency signals from the gaps between the adjacent shield conductors 15 .
  • the slot 9 , the first opening 4 a , and the second opening 14 a are disposed so as to face one another, i.e., to overlap one another in a plan view.
  • the first opening 4 a is larger than the slot 9 , and the first opening 4 a and the slot 9 are disposed so as to make their centers coincide.
  • the second opening 14 a is larger than the first opening 4 a , and the first opening 4 a and the second opening 14 a are disposed so as to make their centers coincide.
  • Such dimensions and disposition of the slot 9 , the first opening 4 a , and the second opening 14 a enable signals to be favorably emitted from the slot 9 through the first opening 4 a and the second opening 14 a into the space thereunder.
  • the first opening 4 a has a shorter length than the second opening 14 a in the direction parallel to the signal conductor 3 .
  • a magnetic field of unnecessary resonance in the dielectric matching unit is likely to occur along the outer periphery of the dielectric matching unit (a region close to the shield conductors 15 ), and a magnetic field of unnecessary resonance occurs as a result of excitation caused by a magnetic field occurring around the signal conductor 3 , that is, a magnetic field occurring in a direction perpendicular to the signal conductor 3 in a plan view. For this reason, a magnetic field of unnecessary resonance is likely to occur in a portion on the outer periphery of the dielectric matching unit that extends in the direction perpendicular to the signal conductor 3 .
  • the ground layer 4 is between the portion where a magnetic field of unnecessary resonance is likely to occur and the signal conductor 3 , and the ground layer 4 can serve as a shield against a magnetic field occurring around the signal conductor 3 . It is thus possible to suppress the occurrence of a magnetic field of unnecessary resonance. Since a magnetic field of unnecessary resonance is likely to concentrate in a region that ranges within one fourth the distance between the shield conductors 15 and the center of the dielectric matching unit from the shield conductors 15 , it is preferable that the length of the first opening 4 a in the direction parallel to the signal conductor 3 (indicated by OL 1 in FIG.
  • the first opening 4 a and the second opening 14 a are disposed so as to make their centers coincide, and the length OL 1 of the first opening 4 a in the direction parallel to the signal conductor 3 is made shorter than half the length OL 2 of the second opening 14 a in the direction parallel to the signal conductor 3 , a portion of the ground layer 4 around the first opening 4 a is located on the region where a magnetic field of unnecessary resonance is likely to concentrate in the dielectric matching unit. This portion serves as an effective shield against a magnetic field occurring around the signal conductor 3 , thus improving the effect of suppressing the occurrence of unnecessary resonance in the dielectric matching unit.
  • FIGS. 7A to 7C are schematic diagrams for illustrating another example of the antenna according to the embodiment of the invention, FIG. 7A being a plan view, FIG. 7B being a cross-sectional view taken along the line A-A indicated in FIG. 7A , and FIG. 7C being a cross-sectional view taken along the line B-B indicated in FIG. 7A .
  • the dielectric layer 2 , the lower dielectric layer 2 a , and the upper dielectric layer 16 are shown in a see-through manner in FIGS. 7A to 7C , as in FIGS. 1A to 6C .
  • the antenna in the example shown in FIGS. 7A to 7C is configured in the same manner as the antenna shown in FIGS.
  • the antenna in the example shown in FIGS. 7A to 7C includes the line conversion structure shown in FIGS. 5A to 5C in which both end portions of the slot 9 are closed, the lower dielectric layer 2 a , the lower ground layer 14 , the first opening 4 a , the second opening 14 a , and the plurality of shield conductors 15 .
  • the lower dielectric layer 2 a is formed on the lower surface of the dielectric layer 2 .
  • the lower ground layer 14 is formed on the lower surface of the lower dielectric layer 2 a .
  • the first opening 4 a is formed in a portion of the ground layer 4 that faces the slot 9 .
  • the second opening 14 a is formed in a portion of the lower ground layer 14 that faces the slot 9 .
  • the plurality of shield conductors 15 are arranged so as to surround the first opening 4 a and the second opening 14 a in a plan view, and connect the ground layer 4 and the lower ground layer 14 .
  • the antenna configured in this way, signals transmitted through the strip line 18 are efficiently stored in the slot line 5 as signal energy, and out of the lower dielectric layer 2 a disposed on the underside of the slot 9 , the portion surrounded by the shield conductors 15 functions as a dielectric matching unit that achieves high-frequency matching between the slot 9 and the space located below the lower dielectric layer 2 a .
  • the line conversion structure provided in the antenna is a structure as described above that is capable of suppressing a loss, the antenna can also suppress a reduction in gain.
  • the dielectric layer 2 , the upper dielectric layer 10 or 16 , and the lower dielectric layer 2 a are made of ceramics, an organic resin, or a composite of these two.
  • the ceramics include ceramic materials such as an alumina (Al 2 O 3 ) sintered compact, an aluminum nitride (AlN) sintered compact, and a silicon nitride (Si 3 N 4 ) sintered compact, glass materials, and glass ceramic materials made of a complex of glass and an inorganic filler such as Al 2 O 3 , SiO 2 , or MgO.
  • organic resins examples include fluorocarbon resins such as tetrafluoroethylene resins (polytetrafluoroethylene (PTFE)), ethylene-tetrafluoroethylene copolymer resins (ethylene-tetrafluoroethylene copolymer resin (ETFE)), and tetrafluoroethylene-perfluoroalkoxy ethylene copolymer resins (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer resins (PFA)), epoxy resins, glass-epoxy resins, and polyimide.
  • fluorocarbon resins such as tetrafluoroethylene resins (polytetrafluoroethylene (PTFE)), ethylene-tetrafluoroethylene copolymer resins (ethylene-tetrafluoroethylene copolymer resin (ETFE)), and tetrafluoroethylene-perfluoroalkoxy ethylene copolymer resins (tetrafluoroethylene-perfluor
  • a glass ceramic material that is capable of being co-fired with a conductor material made of a low-resistance metal such as Au, Ag, or Cu that is capable of transmitting high-frequency signals.
  • the thickness of the dielectric layer 2 made of these materials is set according to the frequency to be used or the application, for example.
  • the signal conductor 3 , the ground layer 4 , the slot ground conductor 7 , the slot signal conductor 8 , the slot pattern conductor(s) 9 a , the upper ground layer 11 or 17 , and the lower ground layer 14 are formed of a metalized layer that is made primarily of a metal such as W, Mo, Mo—Mn, Au, Ag, or Cu.
  • these conductors and layers are formed of a metal layer formed by a thick-film printing method, various types of thin-film forming methods, a plating method, a foil transfer method, or the like, or formed of a layer configured by forming a plating layer on such a metal layer, examples of which include a Cu layer, a Cr—Cu alloy layer, a layer configured by depositing a Ni plating layer and a Au plating layer on a Cr—Cu alloy layer, a layer configured by depositing a Ni—Cr alloy layer and a Au plating layer on a TaN layer, a layer configured by depositing a Pt layer and a Au plating layer on a Ti layer, and a layer configured by depositing a Pt layer and a Au plating layer on a Ni—Cr alloy layer.
  • the thicknesses and widths thereof are set according to the frequency of high-frequency signals to be transmitted or the application, for example.
  • a known method may be used to form the signal conductor 3 , the ground layer 4 , the slot ground conductor 7 , the slot signal conductor 8 , the slot pattern conductor(s) 9 a , the upper ground layer 11 or 17 , and the lower ground layer 14 .
  • the dielectric layer 2 is made of glass ceramics
  • green sheets of glass ceramics to be formed into the dielectric layer 2 are prepared first and then conductor patterns for the signal conductor 3 , the ground layer 4 , the slot ground conductor 7 , the slot signal conductor 8 , the slot pattern conductor(s) 9 a , the upper ground layer 11 or 17 , and the lower ground layer 14 are formed by applying conductor pastes such as Ag in a predetermined shape on the green sheets by printing using a screen printing technique.
  • conductor pastes such as Ag in a predetermined shape
  • the signal conductor 3 , the slot ground conductor 7 , the slot signal conductor 8 , and the slot pattern conductor(s) 9 a are formed on the same green sheet at the same time.
  • the green sheets with the conductor patterns having formed thereon are, for example, overlaid and bonded to one another by pressing so as to create a laminated body, which is then shaped by undergoing firing at 850 to 1000° C. Thereafter, films of plating such as Ni plating and Au plating are formed over the conductors exposed to the outer surface.
  • the dielectric layer 2 is made of an organic resin material, for example, the signal conductor 3 , the ground layer 4 , the slot ground conductor 7 , the slot signal conductor 8 , the slot pattern conductor(s) 9 a , the upper ground layer 11 or 17 , and the lower ground layer 14 are formed by transferring, to organic resin sheets, Cu foils that have been processed into the shapes of the conductor patterns for these conductors and layers, and laminating and bonding the organic resin sheets, on which the Cu foils have been transferred, with an adhesive.
  • organic resin sheets Cu foils that have been processed into the shapes of the conductor patterns for these conductors and layers
  • the through conductors 6 , the ground-reinforcing conductors 6 a , and the upper ground-reinforcing conductors 6 b can be formed by, for example prior to the formation of the conductor patterns for the signal conductor 3 , the ground layer 4 , the slot ground conductor 7 , the slot signal conductor 8 , the slot pattern conductor(s) 9 a , the upper ground layer 11 or 17 , and the lower ground layer 14 in the aforementioned manufacturing method, forming through holes in green sheets in advance by metal molding or laser machining and filling the through holes with a similar conductor paste using a print process or the like.
  • the dielectric layer 2 is made of an organic resin
  • organic resin sheets are used instead of green sheets, and through conductors may be formed in through holes by printing or plating of a conductor paste.
  • the shield conductors 15 may also be formed in the same manner as the through conductors 6 , the ground-reinforcing conductors 6 a , and the upper ground-reinforcing conductors 6 b.
  • Simulations for verifying the effect of the line conversion structure of the invention were conducted using the example shown in FIGS. 4A to 4C as a simulation model.
  • a loss in conversion from the microstrip line 1 to the slot line 5 was estimated by simulating a loss caused during processing in which a signal inputted from the microstrip line 1 was output to the output microstrip line 13 on the lower surface of the dielectric layer 2 .
  • the first opening 4 a for coupling the slot line 5 and the output microstrip line 13 was provided in the ground layer 4 inside the dielectric layer 2 .
  • the relative dielectric constant was set to 8.6, the conductivity of the conductors was set to 6.6 ⁇ 10 6 (S/m), and the signal frequency was set to 60 GHz.
  • the thicknesses of the dielectric layer 2 and the lower dielectric layer 2 a were set to 0.15 mm, and in order to set the impedance of the microstrip line 1 and the output microstrip line 13 to 50 ⁇ , the widths of the signal conductor 3 and the output signal conductor 12 were set to 0.14 mm.
  • the effective dielectric constant of the microstrip line 1 and the output microstrip line 13 was 6.3, and the wavelength of the signals at 60 GHz was 2.0 mm.
  • the diameter of the through conductors 6 was set to 0.1 mm.
  • the width of the slot 9 (the distance between the slot ground conductor 7 and the slot signal conductor 8 ) was set to 0.1 mm, and the length SL was set to 1.4 mm.
  • the stub length ML of the output microstrip line 13 was set to 0.4 mm.
  • the first opening 4 a was assumed to have the shape of a rectangle of 1.8 mm ⁇ 0.35 mm, and was disposed so that the slot 9 was located in the center of the first opening 4 a when viewed from above.
  • the length L of the portion of the slot ground conductor 7 that was parallel to the signal conductor 3 with a gap in between was set to 0.25 times (0.5 mm) the wavelength of signals transmitted through the microstrip line 1
  • the distance D between the signal conductor 3 and the through conductor 6 was set to 0.13 times (0.26 mm) the signal wavelength.
  • FIG. 8 is a graph showing the frequency characteristics of the loss caused between the microstrip line 1 and the output microstrip line 13 of the simulation model, the vertical axis indicating the loss and the horizontal axis the frequency. It can be seen from FIG. 8 that signals were transmitted in the range of approximately 50 to 70 GHz, and favorable electromagnetic coupling between the microstrip line 1 and the output microstrip line 13 was observed in the 60 GHz band, which indicates that the conversion from the microstrip line 1 into the slot line 5 was made favorably.
  • the loss at 60 GHz was 1.1 dB.
  • FIG. 9 is a graph showing a relationship between the loss and the parallel length L at 60 GHz.
  • the parallel length L shown was normalized in accordance with the wavelength of 60 GHz signals transmitted through the microstrip line 1 (in the form of a ratio of the parallel length L to the wavelength). It can be seen from FIG.
  • the loss was small, approximately 1.1 dB, if the parallel length L was less than or equal to 0.25 times the wavelength, but the loss increased sharply if the parallel length L exceeded 0.25 times the wavelength.
  • the loss was in particular great for the parallel length L being 0.5 times the wavelength, which was due to the influence of resonance. Although there was no influence of resonance if the parallel length L was 0.75 times the wavelength, the loss in this case was approximately 2.1 dB, which was greater by the order of 1 dB than that for the parallel length L being less than or equal to 0.25 times the wavelength.
  • FIG. 10 is a graph showing a relationship between the loss and the distance D between the signal conductor 3 and the through conductor 6 at 60 GHz.
  • the distance D between the signal conductor 3 and the through conductor 6 shown was normalized in accordance with the wavelength of 60 GHz signals transmitted through the microstrip line 1 (in the form of a ratio of the distance D to the wavelength). It can be seen from FIG. 10 that the loss was small, approximately 1.1 dB, if the distance D was less than or equal to 0.13 times the wavelength, but the loss increased sharply if the distance D exceeds 0.13 times the wavelength. The loss was in particular great for the distance D being 0.25 times the wavelength, which was due to the influence of resonance as described above. Similarly, if the distance D was 0.25n times (n being a positive integer), the loss would increase due to the influence of resonance.
  • the loss in this case was approximately 2.1 dB, which was greater by the order of 1 dB than that for the distance D being less than or equal to 0.13 times the wavelength. This was considered because of a loss caused by an increase in the length of a transmission path when the potential of the ground layer 4 immediately below the signal conductor 3 of the microstrip line 1 was transmitted to the slot ground conductor 7 via the through conductors 6 .
  • Simulations for verifying the effect of the antenna of the invention were conducted using the example shown in FIGS. 6A to 6C as a simulation model.
  • the bandwidth of the antenna was estimated from the reflection characteristics of signals that were inputted from the microstrip line 1 .
  • the first opening 4 a for coupling the slot line 5 and the dielectric matching unit was provided in the ground layer 4 on the lower surface of the dielectric layer 2 .
  • the relative dielectric constant was set to 8.6
  • the conductivity of the conductors was set to 6.6 ⁇ 10 6 (S/m)
  • the signal frequency was set to 60 GHz.
  • the thickness of the dielectric layer 2 was set to 0.15 mm and the thickness of the lower dielectric layer 2 a to 0.4 mm, and in order to set the impedance of the microstrip line 1 to 50 ⁇ , the width of the signal conductor 3 was set to 0.14 mm.
  • the diameters of the through conductors 6 and the shield conductors 15 were set to 0.1 mm.
  • the width of the slot 9 (the distance between the slot ground conductor 7 and the slot signal conductor 8 ) was set to 0.1 mm, and the length SL was set to 1.4 mm.
  • the first opening 4 a was assumed to have the shape of a rectangle of 1.8 mm ⁇ 0.35 mm, and was disposed so that the slot 9 was located in the center of the first opening 4 a when viewed from above.
  • the shield conductors 15 were arranged at 0.3 mm pitch so that their center positions were located on the sides of a rectangle of 3.6 mm ⁇ 1.5 mm.
  • the second opening 14 a was assumed to have the shape of a rectangle of 3.6 mm ⁇ 1.5 mm.
  • the rectangle that connected the shield conductors 15 and the second opening 14 a were disposed so as to make their centers coincide with the center of the first opening 4 a.
  • FIG. 11 is a graph showing a frequency characteristic of the reflection of high-frequency signals to be inputted from the microstrip line 1 of the simulation model, the vertical axis indicating the reflection and the horizontal axis the frequency. It can be seen from FIG. 11 that the reflection was small, ⁇ 10 dB or less, in the range of approximately 57 to 75 GHz, which indicated that the antenna emitted high-frequency signals into the space over a wide band.
  • the first opening 4 a for coupling the slot line 5 and the dielectric matching unit was provided in the ground layer 4 on the lower surface of the dielectric layer 2 .
  • the relative dielectric constant was set to 9.2
  • the conductivity of the conductors assumed to be metalized with tungsten was set to 6.6 ⁇ 10 6 (S/m)
  • the signal frequency was set to 60 GHz.
  • the thicknesses of the upper dielectric layer 16 and the dielectric layer 2 were set to 0.125 mm
  • the thickness of the lower dielectric layer 2 a was set to 0.4 mm
  • the width of the signal conductor 3 of the strip line 18 was set to 0.1 mm.
  • the gap between the slot ground conductor 7 and the signal conductor 3 was set to 0.1 mm.
  • the diameters of the through conductors 6 and the shield conductors 15 were set to 0.1 mm, and the distance D between the through conductor 6 and the signal conductor 3 was set to 0.23 mm.
  • the width of the slot 9 (the distance between the slot ground conductor 7 and the slot signal conductor 8 ) was set to 0.1 mm, and the length SL was set to 0.8 mm.
  • the width of the slot signal conductor 8 was set to 0.205 mm.
  • the two slot pattern conductors 9 a were configured on the upper surface of the dielectric layer 2 so as to close both end portions of the slot 9 , and the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.35 times (0.577 mm) the wavelength of signals transmitted through the strip line 18 .
  • slot pattern width SW 0.35 times (0.577 mm) the wavelength of signals transmitted through the strip line 18 .
  • Test Case 2 simulations were conducted in the same manner as in Test Case 1, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.3 times (0.495 mm) the wavelength of signals transmitted through the strip line 18 .
  • Test Case 3 simulations were conducted in the same manner as in Test Case 1, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.25 times (0.412 mm) the wavelength of signals transmitted through the strip line 18 .
  • Test Case 4 simulations were conducted in the same manner as in Test Case 1, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.2 times (0.33 mm) the wavelength of signals transmitted through the strip line 18 .
  • Test Case 5 simulations were conducted in the same manner as in Test Case 1, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.15 times (0.247 mm) the wavelength of signals transmitted through the strip line 18 .
  • FIG. 12 is a graph showing the relationship between the gain of the antenna and the slot pattern width in the case where no ground-reinforcing conductors are formed.
  • the vertical axis indicates the gain (dBi), and the horizontal axis indicates the slot pattern width with respect to the wavelength.
  • FIGS. 13A to 13C are graphs showing the simulation results for the gain of the antenna in Test Cases 1, 3, and 5.
  • FIG. 13A shows the simulation results for Test Case 1, FIG. 13B for Test Case 3, and FIG.
  • the solid line A indicates the gain of the antenna in a plane that is parallel to the signal conductor 3 and perpendicular to the dielectric layer 2
  • the broken line B indicates the gain of the antenna in a plane that is perpendicular to the signal conductor 3 and perpendicular to the dielectric layer 2 .
  • Test Case 6 simulations were conducted in the same manner as in Test Case 1, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.25 times (0.412 mm) the wavelength of signals transmitted through the strip line 18 , and the ground-reinforcing conductors 6 a were disposed corresponding to the respective end portions of the slot 9 at positions that were spaced 0.25 times the wavelength of signals transmitted through the strip line 18 from the respective end portions of the slot 9 in directions away from the signal conductor 3 (that is, the clearance between the conductors and the end portions of the slot 9 was 0.25 times the wavelength). Note that in Test Case 6, the simulations were conducted on the assumption that no upper ground-reinforcing conductors 6 b were formed.
  • Test Case 7 simulations were conducted in the same manner as in Test Case 6, with the exception that the clearance between the ground-reinforcing conductors 6 a and the end portions of the slot 9 was set to 0.125 times the wavelength.
  • Test Case 8 simulations were conducted in the same manner as in Test Case 6, with the exception that the clearance between the ground-reinforcing conductors 6 a and the end portions of the slot 9 was set to 0 times the wavelength, that is, the center positions of the ground-reinforcing conductors 6 a were made coincide with the positions of the end portions of the slot 9 .
  • Test Case 9 simulations were conducted in the same manner as in Test Case 6, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.15 times (0.247 mm) the wavelength of signals transmitted through the strip line 18 , and the clearance between the ground-reinforcing conductors 6 a and the end portions of the slot 9 was set to 0.15 times the wavelength.
  • Test Case 10 simulations were conducted in the same manner as in Test Case 6, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.15 times (0.247 mm) the wavelength of signals transmitted through the strip line 18 , and the clearance between the ground-reinforcing conductors 6 a and the end portions of the slot 9 was set to 0 times the wavelength, that is, the center positions of the ground-reinforcing conductors 6 a were made coincide with the positions of the end portions of the slot 9 .
  • slot pattern width SW the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3
  • the clearance between the ground-reinforcing conductors 6 a and the end portions of the slot 9 was set to 0 times the wavelength, that is, the center positions of the ground-reinforcing conductors 6 a were made coincide with the positions of the end portions of the slot 9
  • FIG. 14 is a graph showing the relationship between the gain of the antenna and the clearance between the ground-reinforcing conductors and the end portions of the slot.
  • the vertical axis indicates the gain (dBi)
  • the horizontal axis indicates the clearance between the ground-reinforcing conductors and the end portions of the slot with respect to the wavelength.
  • A denotes the wavelength of signals transmitted through the strip line 18 .
  • FIGS. 15A to 15C are graphs showing the simulation results for the gain of the antenna in Test Cases 6, 7, and 8. In FIGS.
  • FIG. 15A shows the simulation results for Test Case 6, FIG. 15B for Test Case 7, and FIG. 15C for Test Case 8, the vertical axis indicating the gain (dBi) and the horizontal axis the angle (deg).
  • the solid line A indicates the gain of the antenna in a plane that is parallel to the signal conductor 3 and perpendicular to the dielectric layer 2
  • the broken line B indicates the gain of the antenna in a plane that is perpendicular to the signal conductor 3 and perpendicular to the dielectric layer 2 .
  • Test Case 6 0.25 0.25 4.6 Test Case 7 0.25 0.125 4.7 Test Case 8 0.25 0 5 Test Case 9 0.15 0.15 4.2 Test Case 10 0.15 0 4.5
  • Test Case 11 simulations were conducted in the same manner as in Test Case 1, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.25 times (0.412 mm) the wavelength of signals transmitted through the strip line 18 , and the ground-reinforcing conductors 6 a were provided on the extension of the signal conductor 3 so that the ground-reinforcing conductors 6 a connected the slot signal conductor 8 and the ground layer 4 .
  • FIG. 16 is a graph showing the simulation results for the gain of the antenna in Test Case 11.
  • the vertical axis indicates the gain (dBi), and the horizontal axis the angle (deg).
  • the solid line A indicates the gain of the antenna in a plane that is parallel to the signal conductor 3 and perpendicular to the dielectric layer 2
  • the broken line B indicates the gain of the antenna in a plane that is perpendicular to the signal conductor 3 and perpendicular to the dielectric layer 2 . It can be seen from FIG. 16 that the effect of suppressing a reduction in gain was not obtained if the ground-reinforcing conductors 6 a were provided so as to connect the slot signal conductor 8 and the ground layer 4 .
  • Test Case 12 simulations were conducted in the same manner as in Test Case 1, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.15 times (0.247 mm) the wavelength of signals transmitted through the strip line 18 , and a ground-reinforcing conductor 6 a was disposed corresponding to only one end portion of the slot 9 at a position that was spaced 0.15 times the wavelength of signals transmitted through the strip line 18 from the one end portion of the slot 9 in a direction away from the signal conductor 3 (that is, the clearance between the conductor and the one end of the slot 9 was 0.15 times the wavelength).
  • Test Case 13 simulations were conducted in the same manner as in Test Case 1, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.15 times (0.247 mm) the wavelength of signals transmitted through the strip line 18 , and the two ground-reinforcing conductors 6 a were disposed at positions, specifically, at the position spaced 0.15 times the signal wavelength from one end portion of the slot 9 (i.e., the clearance between the conductor and the end of the slot 9 was 0.15 times the wavelength) and at the position spaced 0 times the signal wavelength from the other end portion of the slot 9 (i.e., the center position of the ground-reinforcing conductor 6 a was made coincide with the position of the end portion of the slot 9 ).
  • the positions where the two ground-reinforcing conductors 6 a were disposed were asymmetrical with respect to the signal conductor 3 .
  • Test Case 14 simulations were conducted in the same manner as in Test Case 1, with the exception that the length of the portions of the slot pattern conductors 9 a that were perpendicular to the signal conductor 3 (slot pattern width SW) was set to 0.15 times (0.247 mm) the wavelength of signals transmitted through the strip line 18 , the ground-reinforcing conductors 6 a were disposed corresponding to the respective end portions of the slot 9 at positions spaced 0.15 times the signal wavelength from the end portions of the slot 9 in directions away from the signal conductor 3 (i.e., the clearance between the conductors and the end portions of the slot 9 was 0.15 times the wavelength), and the upper ground-reinforcing conductors 6 b were disposed corresponding to the respective end portions of the slot 9 at positions spaced 0.15 times the signal wavelength from the end portions of the slot 9 in directions away from the signal conductor 3 (i.e., the clearance between the conductors and the end portions of the slot 9 was 0.15 times the wavelength).
  • Test Case 15 simulations were conducted in the same manner as in Test Case 14, with the exception that the upper ground-reinforcing conductors 6 b were disposed corresponding to the respective end portions of the slot 9 at positions spaced 0 times the signal wavelength from the end portions of the slot 9 in directions away from the signal conductor 3 (i.e., the center positions of the upper ground-reinforcing conductors 6 b were made coincide with the positions of the ends of the slot 9 ).
  • the upper ground-reinforcing conductors 6 b were disposed at positions that were shifted from the ground-reinforcing conductors 6 a.

Landscapes

  • Waveguide Aerials (AREA)
  • Waveguides (AREA)
US13/318,334 2009-12-22 2010-12-16 Line Conversion Structure and Antenna Using the Same Abandoned US20120274526A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2009-289990 2009-12-22
JP2009289990 2009-12-22
JP2010013207 2010-01-25
JP2010-013207 2010-01-25
JP2010148374 2010-06-29
JP2010-148374 2010-06-29
PCT/JP2010/072720 WO2011078061A1 (ja) 2009-12-22 2010-12-16 線路変換構造およびそれを用いたアンテナ

Publications (1)

Publication Number Publication Date
US20120274526A1 true US20120274526A1 (en) 2012-11-01

Family

ID=44195590

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/318,334 Abandoned US20120274526A1 (en) 2009-12-22 2010-12-16 Line Conversion Structure and Antenna Using the Same

Country Status (5)

Country Link
US (1) US20120274526A1 (ja)
EP (1) EP2518820A4 (ja)
JP (1) JP5509220B2 (ja)
CN (1) CN102414912B (ja)
WO (1) WO2011078061A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11812546B2 (en) 2020-05-13 2023-11-07 Sumitomo Electric Printed Circuits, Inc. High-frequency circuit

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253303B (zh) * 2013-06-28 2017-02-15 华为技术有限公司 多天线系统和移动终端
CN103441318B (zh) * 2013-08-01 2016-09-21 南京理工大学 基于微带线到共面带状线超宽带渐变地巴伦器
CN103474732A (zh) * 2013-09-26 2013-12-25 安徽蓝麦通信科技有限公司 一种双接地导体的信号传输板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160905A (en) * 1991-07-22 1992-11-03 Motorola, Inc. High dielectric micro-trough line filter

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01300701A (ja) * 1988-05-30 1989-12-05 Mitsubishi Electric Corp コプラナー型アンテナ
JPH03129903A (ja) 1989-10-14 1991-06-03 Mitsubishi Electric Corp 多層マイクロストリップ線路
FR2662308B1 (fr) * 1990-05-17 1993-02-05 Centre Nat Etd Spatiales Dispositif de transition entre deux lignes hyperfrequence realisees en technologie planaire.
JPH06303010A (ja) 1993-04-14 1994-10-28 Sony Corp 高周波伝送線路及び該高周波伝送線路を用いた集積回路装置並びに高周波平面回路の接続方法
FI98105C (fi) * 1995-03-06 1997-04-10 Valtion Teknillinen Mikroliuska-aaltoputkisiirtymä
JPH11330850A (ja) * 1998-05-12 1999-11-30 Harada Ind Co Ltd 円偏波クロスダイポールアンテナ
JP2002026611A (ja) 2000-07-07 2002-01-25 Nec Corp フィルタ
WO2002033782A1 (en) * 2000-10-18 2002-04-25 Nokia Corporation Waveguide to stripline transition
JP3960191B2 (ja) * 2002-10-15 2007-08-15 日立電線株式会社 アンテナ及びそれを備えた電気機器
JP4367218B2 (ja) * 2004-01-09 2009-11-18 旭硝子株式会社 伝送線路変換装置
JP2006238055A (ja) * 2005-02-24 2006-09-07 Kyocera Corp 高周波線路−導波管変換器
US7586386B2 (en) * 2005-03-15 2009-09-08 Asahi Glass Company, Limited Transmission line transition from a coplanar strip line to a conductor pair using a semi-loop shape conductor
JP2006295891A (ja) * 2005-03-15 2006-10-26 Asahi Glass Co Ltd 伝送線路変換装置
CN1933237A (zh) * 2005-09-13 2007-03-21 上海大学 波导-微带线变换信号分配器
JP2007088864A (ja) * 2005-09-22 2007-04-05 Anten Corp アンテナ
EP1923950A1 (en) * 2006-11-17 2008-05-21 Siemens S.p.A. SMT enabled microwave package with waveguide interface
JP4365852B2 (ja) * 2006-11-30 2009-11-18 株式会社日立製作所 導波管構造

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160905A (en) * 1991-07-22 1992-11-03 Motorola, Inc. High dielectric micro-trough line filter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11812546B2 (en) 2020-05-13 2023-11-07 Sumitomo Electric Printed Circuits, Inc. High-frequency circuit

Also Published As

Publication number Publication date
WO2011078061A1 (ja) 2011-06-30
CN102414912A (zh) 2012-04-11
JPWO2011078061A1 (ja) 2013-05-09
EP2518820A4 (en) 2014-08-27
CN102414912B (zh) 2014-10-15
JP5509220B2 (ja) 2014-06-04
EP2518820A1 (en) 2012-10-31

Similar Documents

Publication Publication Date Title
EP2862230B1 (en) Directional coupler waveguide structure and method
US6674347B1 (en) Multi-layer substrate suppressing an unwanted transmission mode
US7884682B2 (en) Waveguide to microstrip transducer having a ridge waveguide and an impedance matching box
WO2012073591A1 (ja) 高周波信号線路
US7463109B2 (en) Apparatus and method for waveguide to microstrip transition having a reduced scale backshort
WO2012074100A1 (ja) 高周波信号線路
US8358180B2 (en) High frequency module comprising a transition between a wiring board and a waveguide and including a choke structure formed in the wiring board
JP2001320208A (ja) 高周波回路及びそれを用いたモジュール、通信機
JP2011223203A (ja) 導波管・平面線路変換器及び高周波回路
WO2018135475A1 (ja) 伝送線路
US20120274526A1 (en) Line Conversion Structure and Antenna Using the Same
JP3464116B2 (ja) 高周波用伝送線路の結合構造およびそれを具備する多層配線基板
JP2004153415A (ja) 高周波線路−導波管変換器
JP5198327B2 (ja) 高周波基板、高周波基板を備える送信器、受信器、送受信器およびレーダ装置
JP4901823B2 (ja) フィルタ装置、これを用いた無線通信モジュール及び無線通信機器
JP3631667B2 (ja) 配線基板およびその導波管との接続構造
JP3659284B2 (ja) 高周波用多層配線基板およびその製造方法
US8324508B2 (en) Composite circuit board
JP4012796B2 (ja) 高周波信号伝送用積層構造およびそれを用いた高周波半導体パッケージ
JP4462782B2 (ja) 高周波用配線基板
JP5455703B2 (ja) 高周波伝送構造およびそれを用いたアンテナ
JP5606199B2 (ja) フィルタ装置
JP2004120291A (ja) バラントランス
JP2004214584A (ja) 高周波用パッケージ
JP5955799B2 (ja) 高周波回路及び高周波回路―導波管変換器

Legal Events

Date Code Title Description
AS Assignment

Owner name: KYOCERA CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KORIYAMA, SHINICHI;REEL/FRAME:027306/0283

Effective date: 20111102

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION