US20120019792A1 - Liquid jet and recovery system for immersion lithography - Google Patents

Liquid jet and recovery system for immersion lithography Download PDF

Info

Publication number
US20120019792A1
US20120019792A1 US13/200,982 US201113200982A US2012019792A1 US 20120019792 A1 US20120019792 A1 US 20120019792A1 US 201113200982 A US201113200982 A US 201113200982A US 2012019792 A1 US2012019792 A1 US 2012019792A1
Authority
US
United States
Prior art keywords
liquid
nozzles
wafer
exposure region
recovery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/200,982
Inventor
W. Thomas Novak
Andrew J. Hazelton
Douglas C. Watson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to US13/200,982 priority Critical patent/US20120019792A1/en
Publication of US20120019792A1 publication Critical patent/US20120019792A1/en
Priority to US14/283,827 priority patent/US9304409B2/en
Priority to US15/086,675 priority patent/US9785057B2/en
Priority to US15/723,628 priority patent/US10185222B2/en
Priority to US16/234,264 priority patent/US20190129311A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Definitions

  • This invention relates to a liquid jet and recovery system for an immersion lithography apparatus, adapted to supply a liquid into the space between a workpiece such as a wafer and the last-stage optical element such as a lens of an optical system for projecting the image of a reticle onto the workpiece.
  • the image pattern is typically provided by a reticle placed on a reticle stage and projected by an optical system including an illuminator and a last-stage optical element that is disposed opposite the workpiece with a gap in between that element and the workpiece.
  • the last-stage optical element may or may not be a lens and is hereinafter sometimes simply referred to as “the optical element.”
  • the aforementioned gap is hereinafter referred to as “the exposure region” because the image pattern is projected onto the workpiece through this gap.
  • a liquid jet and recovery system The purpose of a liquid jet and recovery system is to supply a fluid such as water into this exposure region, to entrain it there at least during the projection of the image pattern on the workpiece and to remove (or to recover) it away from the exposure region.
  • arrays of nozzles are arranged to have their openings located proximal to the exposure region. According to one aspect of the invention, these nozzles are each adapted to serve selectively either as a source nozzle for supplying a fluid into the exposure region or as a recovery nozzle for recovering the fluid from the exposure region.
  • a fluid controlling device is further provided, the functions of which include causing nozzles of selected one or more of these arrays on one or more of the sides of the exposure region to serve as source nozzles and causing a fluid to be supplied through them into the exposure region such that the supplied fluid contacts both the workpiece and the optical element for immersion lithography.
  • the fluid controlling device also may be adapted to simultaneously cause nozzles of selected one or more of the remaining arrays to serve as recovery nozzles. Since each of the nozzles can serve selectively either as a supply nozzle or a recovery nozzle, various flow patterns can be realized by this fluid controlling device.
  • the fluid may be supplied into the exposure region through the nozzles of the array on a specified side and removed through those on the array on the opposite side, the nozzles of the arrays on the remaining sides neither supplying nor recovering the fluid.
  • the fluid may be supplied into the exposure region through the nozzles of mutually oppositely facing arrays and recovered through those of the arrays on the transversely facing arrays.
  • a flow in a diagonal direction may be realized if the fluid is supplied from the nozzles of two arrays on mutually adjacent and mutually perpendicular sides of the exposure region and recovered through those of the remaining arrays on the oppositely facing sides.
  • the fluid may be supplied through all of the nozzles surrounding substantially all around the exposure region to have the fluid entrained inside the exposure region.
  • arrays of nozzles exclusively adapted to supply a fluid herein referred to as fluid-supply nozzles
  • arrays of nozzles exclusively adapted to recover the fluid herein referred to as fluid-recovery nozzles
  • the fluid-supply nozzles surrounding the exposure region and the fluid-recovery nozzles surrounding the fluid-supply nozzles from all sides.
  • a groove is formed substantially all around the exposure region and the fluid-recovery nozzles are arranged to open into this groove such that a uniform flow can be more easily established.
  • the fluid controlling device can establish the variety of flow patterns as explained above.
  • this last-stage optical element comprises a pair of optical plates contacting each other across a contact plane and having channels formed on this contact plane, these channels connecting to the exposure region such that the fluid can be passed through these channels into or out of the exposure region.
  • This embodiment is preferred because the fluid used for immersion lithography tends to affect the material of the optical element adversely, and lenses are more expensive and troublesome to replace than optical plates.
  • FIG. 1 is a schematic cross-sectional view of an immersion lithography apparatus that incorporates the invention
  • FIG. 2 is a process flow diagram illustrating an exemplary process by which semiconductor devices are fabricated using the apparatus shown in FIG. 1 according to the invention
  • FIG. 3 is a flowchart of the wafer processing step shown in FIG. 2 in the case of fabricating semiconductor devices according to the invention
  • FIG. 4 is a schematic plan view of a liquid jet and recovery system embodying this invention that may be incorporated in the lithography apparatus of FIG. 1 ;
  • FIG. 5 is a schematic side view of the liquid jet and recovery system of FIG. 4 ;
  • FIGS. 6-9 are schematic plan views of the liquid jet and recovery system of FIGS. 4 and 5 to show various flow patterns that may be established;
  • FIG. 10 is a schematic plan view of another liquid jet and recovery system embodying this invention.
  • FIG. 11 is a schematic plan view of still another liquid jet and recovery system embodying this invention.
  • FIG. 12 is a schematic side view of the liquid jet and recovery system of FIG. 11 ;
  • FIG. 13 is a schematic side view of still another liquid jet and recovery system embodying this invention.
  • FIG. 14 is a schematic plan view of the liquid jet and recovery system of FIG. 13 .
  • FIG. 1 shows an immersion lithography apparatus 100 that may incorporate a liquid jet and recovery system embodying this invention, however, this exemplary example of an immersion lithography apparatus itself is not intended to limit the scope of the invention.
  • the immersion lithography apparatus 100 comprises an illuminator optical unit 1 including a light source such as a KrF excimer laser unit, an optical integrator (or homogenizer) and a lens and serving to emit pulsed ultraviolet light IL with wavelength 248 nm to be made incident to a pattern on a reticle R.
  • the pattern on the reticle R is projected onto a wafer W coated with a photoresist at a specified magnification (such as 1/4 or 1/5) through a telecentric light projection unit PL.
  • the pulsed light IL may alternatively be ArF excimer laser light with wavelength 193 nm, F 2 laser light with wavelength 157 nm or the i-line of a mercury lamp with wavelength 365 nm.
  • the coordinate system with X-, Y- and Z-axes as shown in FIG. 1 is referenced to explain the directions in describing the structure and functions of the lithography apparatus 100 .
  • the light projection unit PL is illustrated in FIG. 1 only by way of its last-stage optical element (such as a lens) 4 disposed opposite to the wafer W and a cylindrical housing 3 containing all the others of its components.
  • the reticle R is supported on a reticle stage RST incorporating a mechanism for moving the reticle R in the X-direction, the Y-direction and the rotary direction around the Z-axis.
  • the two-dimensional position and orientation of the reticle R on the reticle stage RST are detected by a laser interferometer (not shown) in real time and the positioning of the reticle R is effected by a main control unit 14 on the basis of the detection thus made.
  • the wafer W is held by a wafer holder (not shown) on a Z-stage 9 for controlling the focusing position (along the Z-axis) and the tilting angle of the wafer W.
  • the Z-stage 9 is affixed to an XY-stage 10 adapted to move in the XY-plane substantially parallel to the image-forming surface of the light projection unit PL.
  • the XY-stage 10 is set on a base 11 .
  • the Z-stage 9 serves to match the wafer surface with the image surface of the light projection unit PL by adjusting the focusing position (along the Z-axis) and the tilting angle of the wafer W by the auto-focusing and auto-leveling method
  • the XY-stage 10 serves to adjust the position of the wafer W in the X-direction and the Y-direction.
  • the two-dimensional position and orientation of the Z-stage 9 (and hence also of the wafer W) are monitored in real time by another laser interferometer 13 with reference to a mobile mirror 12 affixed to the Z-stage 9 .
  • Control data based on the results of this monitoring are transmitted from the main control unit 14 to a stage-driving unit 15 adapted to control the motions of the Z-stage 9 and the XY-stage 10 according to the received control data.
  • the projection light is made to sequentially move from one to another of different exposure positions on the wafer W according to the pattern on the reticle R in a step-and-repeat routine or a step-and-scan routine.
  • the lithography apparatus 100 being described with reference to FIG. 1 is an immersion lithography apparatus and is hence adapted to have a liquid 7 of a specified kind such as water filling the space between the surface of the wafer W and the lower surface of the last-stage optical element 4 of the light projection unit PL at least while the pattern image of the reticle R is being copied onto the wafer W.
  • a liquid 7 of a specified kind such as water filling the space between the surface of the wafer W and the lower surface of the last-stage optical element 4 of the light projection unit PL at least while the pattern image of the reticle R is being copied onto the wafer W.
  • the last-stage optical element 4 of the light projection unit PL is detachably affixed to the cylindrical housing 3 .
  • the liquid 7 is supplied from a liquid supply unit 5 that may comprise a tank, a pressure pump and a temperature regulator (not individually shown) to the space above the wafer W under a temperature-regulated condition and is collected by a liquid recovery unit 6 .
  • the temperature of the liquid 7 is regulated to be approximately the same as the temperature inside the chamber in which the lithography apparatus 100 itself is disposed.
  • Source nozzles 21 through which the liquid 7 is supplied from the supply unit 5 and recovery nozzles 23 through which the liquid 7 is collected into the recovery unit 6 are only schematically shown. Their arrangements will be described more in detail below because they are parts of a liquid jet and recovery system to which this invention relates.
  • FIGS. 4 and 5 show schematically the design of a liquid jet and recovery system 200 embodying this invention which may be incorporated in the lithography apparatus 100 described above, FIG. 5 being its horizontal side view and FIG. 4 being its plan view.
  • the design is characterized as having a large plural number of nozzles 210 arranged in a quasi-continuous manner in arrays on all sides of the exposure area by the light projection unit PL.
  • the nozzles 210 are arranged in four arrays 211 , 212 , 213 and 214 , each of the arrays being on one side of a rectangular formation.
  • FIG. 1 showed the source nozzles 21 connected to the liquid supply unit 5 and the recovery nozzles 23 connected to the liquid recovery unit 6 separately, it was for the convenience of illustration.
  • the nozzles 210 shown in FIGS. 4 and 5 instead are each adapted to function both as a source nozzle and as a recovery nozzle, or explained more precisely, to be controlled so as to function selectively either as a source nozzle or as a recovery nozzle under the control of the main control unit 14 .
  • FIGS. 6-9 show different ways in which the liquid jet and recovery system 200 of FIGS. 4 and 5 may be operated.
  • FIG. 6 shows an example in which the wafer scan direction is as shown by an arrow and the nozzles 210 in one of the arrays (i.e., array 213 ) are controlled so as to function as source nozzles while those in the opposite array 211 are controlled so as to function as recovery nozzles, those in the remaining two arrays 212 and 214 being controlled to function neither as source nozzles nor as recovery nozzles.
  • the flow pattern of the liquid 7 will be as shown by parallel arrows.
  • FIG. 7 shows another example in which the nozzles 210 in mutually opposite arrays (i.e., arrays 211 and 213 ) are controlled so as to function as source nozzles while those in the remaining arrays 212 and 214 are controlled so as to function as recovery nozzles.
  • the resultant flow pattern of the liquid 7 will be as shown by arcuate arrows.
  • the wafer W may be moved in two scanning directions while the liquid 7 is directed in two orthogonal directions.
  • FIG. 8 shows still another example in which all nozzles 210 in all of the arrays are controlled so as to function as source nozzles, serving to entrain the liquid 7 in the region below the projection lens of the light projection unit PL between its last-stage optical element 4 and the wafer W, the flow pattern being shown by radially outwardly pointing arrows.
  • FIG. 9 shows still another example in which the nozzles 210 in two mutually adjacent arrays (i.e., arrays 211 and 212 ) are controlled so as to function as source nozzles and those in the remaining arrays 213 and 214 are controlled so as to function as recovery nozzles.
  • the resultant flow pattern of the liquid 7 is shown by diagonal arrows.
  • the nozzles 210 are individually controlled, or the jets are connected to valves that can be selectively set on and off as source or recovery. They may be arranged such that a single valve may control several jets together. The jets may be individual parts or integrated together as a single unit. The valve shown in FIG. 5 , therefore, may be regarded as being connected to only one nozzle or to a group of nozzles. Alternatively, the nozzles may be controlled as groups. For example, group 211 may be controlled by a single valve or groups 211 and 213 may be controlled by a single valve.
  • FIG. 10 shows another liquid jet and recovery system 220 with an alternative arrangement characterized as providing source nozzles 225 and recovery nozzles 230 independently.
  • the system 220 shown in FIG. 10 is provided with the source nozzles 225 which are not adapted to function as a recovery nozzle and the recovery nozzles 230 which are not adapted to function as a source nozzle.
  • the source nozzles 225 and the recovery nozzles 230 are separately arranged in arrays around the exposure area, the arrays of the source nozzles 225 being each arranged inside the corresponding one of the arrays of the recovery nozzles 230 .
  • Each nozzle may be configured with a valve to turn the nozzle on or off. Alternatively, a single valve may control several jets together. Any of the flow patterns described above with reference to FIGS. 6-9 can be established with the system 220 shown in FIG. 10 .
  • FIGS. 11 and 12 show still another liquid jet and recovery system 240 that is similar to the system 220 described above with reference to FIG. 10 but is different in that a liquid recovery zone 250 is provided substantially all around the exposure area.
  • the liquid recovery zone 250 may comprise a channel cut into a supporting port or a loop made of a suitable material.
  • Individually controllable recovery nozzles 230 are located in the interior of the recovery zone 250 .
  • the zone 250 thus provided is advantageous in that the liquid 7 can be pumped out more uniformly.
  • the source nozzles 225 may be independently controlled or used in groups, as in the embodiments explained above, to establish any of the flow patterns shown in FIGS. 6-9 .
  • the last-stage optical element 4 may or may not be a lens.
  • the lower surface of this optical element 4 adapted to come into direct contact with the liquid 7 , tends to become soiled as particles removed from the photoresist and the impurities contained in the liquid 7 become attached to it.
  • the last-stage optical element 4 may be required to be exchanged from time to time, but if the element that must be replaced by a new element is a lens, the maintenance cost (or the so-called “running cost”) becomes inconveniently high and it takes a longer time for the exchange.
  • the light projection unit PL of the immersion lithography apparatus 100 may be designed such that its last-stage optical element 4 is not a lens.
  • FIGS. 13 and 14 show an example embodying this invention characterized as having a pair of mutually intimately contacting optical plates (upper plate 41 and lower plate 42 ) disposed below the lens 40 that would be the last-stage optical element 4 of the light projection unit PL but for these plates 41 and 42 .
  • the embodiment of the invention shown in FIGS. 13 and 14 is further characterized as integrating the liquid injection nozzle arrays with the last-stage optical element of the light projection unit PL.
  • the lower plate 42 may be provided with grooves on the upper surface so as to form liquid-passing channels 46 as the two plates 41 and 42 are attached to each other.
  • the channels 46 each open at the lower surface, and the upper plate 41 is provided with throughholes 47 each attached to a hose 48 by way of an adaptor 49 such that the liquid 7 may be injected into and recovered from the space between the wafer W and the lower plate 42 through the channels 46 , the throughholes 47 and the hoses 48 .
  • the optical plates 41 and 42 may be of a known kind having parallel surfaces serving to correct the optical characteristics of the light projection unit PL such as its spherical aberration and coma. This embodiment is advantageous because the plates 41 and 42 are less expensive to replace than a lens. Substances such as organic silicon compounds may become attached to the surface of the optical plates 41 and 42 so as to adversely affect the optical characteristics of the light projection unit PL such as its light transmissivity and brightness as well as the uniformity of brightness on the wafer W but the user has only to replace the relatively inexpensive optical plates and the running cost would be significantly less than if the last-stage optical element 4 were a lens.
  • the plates 41 and 42 and the lens 40 alternatively may be cemented together by using optical cements suitable for the wavelengths being used.
  • the liquid jet and recovery system according to this embodiment is advantageous for many reasons.
  • the nozzles can be set close to the exposure area. This helps to insure a continuous layer of bubble-free liquid in the exposure region. It also helps when the edge of the wafer is being exposed because the edge of the wafer is a discontinuity and may perturb the liquid layer, causing bubbles to enter the region being exposed.
  • the layer of liquid around the nozzles is roughly continuous and uniform, allowing for capillary action to help make certain that the liquid layer is uniform.
  • the lens may be of a material such as calcium fluoride that degrades and dissolves in water while the plates may be a material such as fused silica that is stable in contact with water.
  • the region between the channels is open for auxiliary optical beams. These beams may be used for through-the-lens focusing, or for other purposes.
  • Systems according to this invention are generally capable of providing a uniform, bubble-free layer of water between the optical element and the wafer. It may also improve the speed for filling the gap and removing the liquid in the outward areas of the lens or the stage areas surrounding the wafer. Furthermore, it will prevent degradation of the lens or the surface of the optics that may be affected by the contact with the immersion fluid.
  • FIG. 2 is referenced next to describe a process for fabricating a semiconductor device by using an immersion lithography apparatus incorporating a liquid jet and recovery system embodying this invention.
  • step 301 the device's function and performance characteristics are designed.
  • step 302 a mask (reticle) having a pattern is designed according to the previous designing step, and in a parallel step 303 , a wafer is made from a silicon material.
  • the mask pattern designed in step 302 is exposed onto the wafer from step 303 in step 304 by a photolithography system such as the systems described above.
  • step 305 the semiconductor device is assembled (including the dicing process, bonding process and packaging process), then finally the device is inspected in step 306 .
  • FIG. 3 illustrates a detailed flowchart example of the above-mentioned step 304 in the case of fabricating semiconductor devices.
  • step 311 oxidation step
  • step 312 CVD step
  • step 313 electrode formation step
  • step 314 ion implantation step
  • ions are implanted in the wafer.
  • the aforementioned steps 311 - 314 form the preprocessing steps for wafers during wafer processing, and selection is made at each step according to processing requirements.
  • step 315 photoresist formation step
  • step 316 exposure step
  • step 317 developing step
  • step 318 etching step
  • steps other than residual photoresist exposed material surface
  • step 319 photoresist removal step
  • CMOS complementary metal-oxide-semiconductor
  • the liquid need not be water but may be perfluoropolyether (PFPE) such as Fomblin oil used when the light source is F 2 laser (157 mn).
  • PFPE perfluoropolyether

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A liquid immersion lithography apparatus includes a stage on which a wafer is held. A projection system projects a pattern image to an exposure region through an immersion liquid to expose the wafer on the stage. A plurality of supply openings are arranged to surround the exposure region, via which the liquid is supplied from above the exposure region. A plurality of recovery openings are arranged to surround the exposure region, via which the liquid is collected from above the exposure region. A part of the supply openings are selected so as to supply the liquid ahead of the exposure region in a direction in which the stage moves.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This is a Divisional of U.S. patent application Ser. No. 12/232,513 filed , Sep. 18, 2008, which is a Divisional of U.S. patent application Ser. No. 11/236,759 filed Sep. 28, 2005 (now U.S. Pat. No. 7,443,482), which is a Continuation of International Application No. PCT/US2004/010071 filed Apr. 1, 2004, which claims the benefit of U.S. Provisional Patent Application No. 60/462,786 filed Apr. 11, 2003. The entire disclosures of each of the prior applications are hereby incorporated by reference in their entireties.
  • BACKGROUND
  • This invention relates to a liquid jet and recovery system for an immersion lithography apparatus, adapted to supply a liquid into the space between a workpiece such as a wafer and the last-stage optical element such as a lens of an optical system for projecting the image of a reticle onto the workpiece.
  • Such an immersion lithography system has been disclosed, for example, in W099/49504, which is herein incorporated by reference for describing the general background of the technology and some general considerations. One of the issues with existing immersion lithography mechanisms is the supplying and recovery of the immersion liquid. An improved system for supplying and recovering a liquid for immersion lithography is needed.
  • SUMMARY
  • Various liquid jet and recovery systems embodying this invention for an immersion lithography apparatus will be described below for having an image pattern projected onto a workpiece such as a wafer. The image pattern is typically provided by a reticle placed on a reticle stage and projected by an optical system including an illuminator and a last-stage optical element that is disposed opposite the workpiece with a gap in between that element and the workpiece. The last-stage optical element may or may not be a lens and is hereinafter sometimes simply referred to as “the optical element.” The aforementioned gap is hereinafter referred to as “the exposure region” because the image pattern is projected onto the workpiece through this gap.
  • The purpose of a liquid jet and recovery system is to supply a fluid such as water into this exposure region, to entrain it there at least during the projection of the image pattern on the workpiece and to remove (or to recover) it away from the exposure region. In order to carry out the supply and recovery of the fluid quickly and smoothly without generating air bubbles, arrays of nozzles are arranged to have their openings located proximal to the exposure region. According to one aspect of the invention, these nozzles are each adapted to serve selectively either as a source nozzle for supplying a fluid into the exposure region or as a recovery nozzle for recovering the fluid from the exposure region. A fluid controlling device is further provided, the functions of which include causing nozzles of selected one or more of these arrays on one or more of the sides of the exposure region to serve as source nozzles and causing a fluid to be supplied through them into the exposure region such that the supplied fluid contacts both the workpiece and the optical element for immersion lithography.
  • The fluid controlling device also may be adapted to simultaneously cause nozzles of selected one or more of the remaining arrays to serve as recovery nozzles. Since each of the nozzles can serve selectively either as a supply nozzle or a recovery nozzle, various flow patterns can be realized by this fluid controlling device. For example, the fluid may be supplied into the exposure region through the nozzles of the array on a specified side and removed through those on the array on the opposite side, the nozzles of the arrays on the remaining sides neither supplying nor recovering the fluid. As another example, the fluid may be supplied into the exposure region through the nozzles of mutually oppositely facing arrays and recovered through those of the arrays on the transversely facing arrays. As a third example, a flow in a diagonal direction may be realized if the fluid is supplied from the nozzles of two arrays on mutually adjacent and mutually perpendicular sides of the exposure region and recovered through those of the remaining arrays on the oppositely facing sides. Alternatively, the fluid may be supplied through all of the nozzles surrounding substantially all around the exposure region to have the fluid entrained inside the exposure region.
  • According to another aspect of the invention, arrays of nozzles exclusively adapted to supply a fluid, herein referred to as fluid-supply nozzles, and arrays of nozzles exclusively adapted to recover the fluid, herein referred to as fluid-recovery nozzles, are separately provided, the fluid-supply nozzles surrounding the exposure region and the fluid-recovery nozzles surrounding the fluid-supply nozzles from all sides. According to a preferred embodiment, a groove is formed substantially all around the exposure region and the fluid-recovery nozzles are arranged to open into this groove such that a uniform flow can be more easily established. In this case too, the fluid controlling device can establish the variety of flow patterns as explained above.
  • As explained above, the optical element that is disposed opposite the workpiece and that comes into direct contact with the fluid such as water need not be a lens. According to a preferred embodiment of the invention, this last-stage optical element comprises a pair of optical plates contacting each other across a contact plane and having channels formed on this contact plane, these channels connecting to the exposure region such that the fluid can be passed through these channels into or out of the exposure region. This embodiment is preferred because the fluid used for immersion lithography tends to affect the material of the optical element adversely, and lenses are more expensive and troublesome to replace than optical plates.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention will be described in conjunction with the following drawings of exemplary embodiments in which like references numerals designate like elements, and in which:
  • FIG. 1 is a schematic cross-sectional view of an immersion lithography apparatus that incorporates the invention;
  • FIG. 2 is a process flow diagram illustrating an exemplary process by which semiconductor devices are fabricated using the apparatus shown in FIG. 1 according to the invention;
  • FIG. 3 is a flowchart of the wafer processing step shown in FIG. 2 in the case of fabricating semiconductor devices according to the invention;
  • FIG. 4 is a schematic plan view of a liquid jet and recovery system embodying this invention that may be incorporated in the lithography apparatus of FIG. 1;
  • FIG. 5 is a schematic side view of the liquid jet and recovery system of FIG. 4;
  • FIGS. 6-9 are schematic plan views of the liquid jet and recovery system of FIGS. 4 and 5 to show various flow patterns that may be established;
  • FIG. 10 is a schematic plan view of another liquid jet and recovery system embodying this invention;
  • FIG. 11 is a schematic plan view of still another liquid jet and recovery system embodying this invention;
  • FIG. 12 is a schematic side view of the liquid jet and recovery system of FIG. 11;
  • FIG. 13 is a schematic side view of still another liquid jet and recovery system embodying this invention; and
  • FIG. 14 is a schematic plan view of the liquid jet and recovery system of FIG. 13.
  • DETAILED DESCRIPTION OF EMBODIMENTS
  • FIG. 1 shows an immersion lithography apparatus 100 that may incorporate a liquid jet and recovery system embodying this invention, however, this exemplary example of an immersion lithography apparatus itself is not intended to limit the scope of the invention.
  • As shown in FIG. 1, the immersion lithography apparatus 100 comprises an illuminator optical unit 1 including a light source such as a KrF excimer laser unit, an optical integrator (or homogenizer) and a lens and serving to emit pulsed ultraviolet light IL with wavelength 248 nm to be made incident to a pattern on a reticle R. The pattern on the reticle R is projected onto a wafer W coated with a photoresist at a specified magnification (such as 1/4 or 1/5) through a telecentric light projection unit PL. The pulsed light IL may alternatively be ArF excimer laser light with wavelength 193 nm, F2 laser light with wavelength 157 nm or the i-line of a mercury lamp with wavelength 365 nm. In what follows, the coordinate system with X-, Y- and Z-axes as shown in FIG. 1 is referenced to explain the directions in describing the structure and functions of the lithography apparatus 100. For the convenience of disclosure and description, the light projection unit PL is illustrated in FIG. 1 only by way of its last-stage optical element (such as a lens) 4 disposed opposite to the wafer W and a cylindrical housing 3 containing all the others of its components.
  • The reticle R is supported on a reticle stage RST incorporating a mechanism for moving the reticle R in the X-direction, the Y-direction and the rotary direction around the Z-axis. The two-dimensional position and orientation of the reticle R on the reticle stage RST are detected by a laser interferometer (not shown) in real time and the positioning of the reticle R is effected by a main control unit 14 on the basis of the detection thus made.
  • The wafer W is held by a wafer holder (not shown) on a Z-stage 9 for controlling the focusing position (along the Z-axis) and the tilting angle of the wafer W. The Z-stage 9 is affixed to an XY-stage 10 adapted to move in the XY-plane substantially parallel to the image-forming surface of the light projection unit PL. The XY-stage 10 is set on a base 11. Thus, the Z-stage 9 serves to match the wafer surface with the image surface of the light projection unit PL by adjusting the focusing position (along the Z-axis) and the tilting angle of the wafer W by the auto-focusing and auto-leveling method, and the XY-stage 10 serves to adjust the position of the wafer W in the X-direction and the Y-direction.
  • The two-dimensional position and orientation of the Z-stage 9 (and hence also of the wafer W) are monitored in real time by another laser interferometer 13 with reference to a mobile mirror 12 affixed to the Z-stage 9. Control data based on the results of this monitoring are transmitted from the main control unit 14 to a stage-driving unit 15 adapted to control the motions of the Z-stage 9 and the XY-stage 10 according to the received control data. At the time of an exposure, the projection light is made to sequentially move from one to another of different exposure positions on the wafer W according to the pattern on the reticle R in a step-and-repeat routine or a step-and-scan routine.
  • The lithography apparatus 100 being described with reference to FIG. 1 is an immersion lithography apparatus and is hence adapted to have a liquid 7 of a specified kind such as water filling the space between the surface of the wafer W and the lower surface of the last-stage optical element 4 of the light projection unit PL at least while the pattern image of the reticle R is being copied onto the wafer W.
  • The last-stage optical element 4 of the light projection unit PL is detachably affixed to the cylindrical housing 3. The liquid 7 is supplied from a liquid supply unit 5 that may comprise a tank, a pressure pump and a temperature regulator (not individually shown) to the space above the wafer W under a temperature-regulated condition and is collected by a liquid recovery unit 6. The temperature of the liquid 7 is regulated to be approximately the same as the temperature inside the chamber in which the lithography apparatus 100 itself is disposed. Source nozzles 21 through which the liquid 7 is supplied from the supply unit 5 and recovery nozzles 23 through which the liquid 7 is collected into the recovery unit 6 are only schematically shown. Their arrangements will be described more in detail below because they are parts of a liquid jet and recovery system to which this invention relates.
  • According to this invention, multiple jets are provided to inject an immersion fluid (referenced above as the liquid 7) between the wafer W to be exposed and the last-stage optical element 4 of the light projection unit PL for projecting an image pattern thereon. FIGS. 4 and 5 show schematically the design of a liquid jet and recovery system 200 embodying this invention which may be incorporated in the lithography apparatus 100 described above, FIG. 5 being its horizontal side view and FIG. 4 being its plan view. The design is characterized as having a large plural number of nozzles 210 arranged in a quasi-continuous manner in arrays on all sides of the exposure area by the light projection unit PL. According to the embodiment illustrated in FIG. 4, the nozzles 210 are arranged in four arrays 211, 212, 213 and 214, each of the arrays being on one side of a rectangular formation.
  • Although FIG. 1 showed the source nozzles 21 connected to the liquid supply unit 5 and the recovery nozzles 23 connected to the liquid recovery unit 6 separately, it was for the convenience of illustration. The nozzles 210 shown in FIGS. 4 and 5 instead are each adapted to function both as a source nozzle and as a recovery nozzle, or explained more precisely, to be controlled so as to function selectively either as a source nozzle or as a recovery nozzle under the control of the main control unit 14.
  • FIGS. 6-9 show different ways in which the liquid jet and recovery system 200 of FIGS. 4 and 5 may be operated. FIG. 6 shows an example in which the wafer scan direction is as shown by an arrow and the nozzles 210 in one of the arrays (i.e., array 213) are controlled so as to function as source nozzles while those in the opposite array 211 are controlled so as to function as recovery nozzles, those in the remaining two arrays 212 and 214 being controlled to function neither as source nozzles nor as recovery nozzles. As a result, the flow pattern of the liquid 7 will be as shown by parallel arrows.
  • FIG. 7 shows another example in which the nozzles 210 in mutually opposite arrays (i.e., arrays 211 and 213) are controlled so as to function as source nozzles while those in the remaining arrays 212 and 214 are controlled so as to function as recovery nozzles. The resultant flow pattern of the liquid 7 will be as shown by arcuate arrows. In other words, the wafer W may be moved in two scanning directions while the liquid 7 is directed in two orthogonal directions.
  • FIG. 8 shows still another example in which all nozzles 210 in all of the arrays are controlled so as to function as source nozzles, serving to entrain the liquid 7 in the region below the projection lens of the light projection unit PL between its last-stage optical element 4 and the wafer W, the flow pattern being shown by radially outwardly pointing arrows.
  • FIG. 9 shows still another example in which the nozzles 210 in two mutually adjacent arrays (i.e., arrays 211 and 212) are controlled so as to function as source nozzles and those in the remaining arrays 213 and 214 are controlled so as to function as recovery nozzles. The resultant flow pattern of the liquid 7 is shown by diagonal arrows.
  • In summary, in each of these examples, the nozzles 210 are individually controlled, or the jets are connected to valves that can be selectively set on and off as source or recovery. They may be arranged such that a single valve may control several jets together. The jets may be individual parts or integrated together as a single unit. The valve shown in FIG. 5, therefore, may be regarded as being connected to only one nozzle or to a group of nozzles. Alternatively, the nozzles may be controlled as groups. For example, group 211 may be controlled by a single valve or groups 211 and 213 may be controlled by a single valve.
  • FIG. 10 shows another liquid jet and recovery system 220 with an alternative arrangement characterized as providing source nozzles 225 and recovery nozzles 230 independently. In other words, unlike the system 200 shown in FIGS. 4-9 with nozzles each functioning selectively either as a source nozzle or as a recovery nozzle, the system 220 shown in FIG. 10 is provided with the source nozzles 225 which are not adapted to function as a recovery nozzle and the recovery nozzles 230 which are not adapted to function as a source nozzle.
  • According to the example shown in FIG. 10, the source nozzles 225 and the recovery nozzles 230 are separately arranged in arrays around the exposure area, the arrays of the source nozzles 225 being each arranged inside the corresponding one of the arrays of the recovery nozzles 230. Each nozzle may be configured with a valve to turn the nozzle on or off. Alternatively, a single valve may control several jets together. Any of the flow patterns described above with reference to FIGS. 6-9 can be established with the system 220 shown in FIG. 10.
  • FIGS. 11 and 12 show still another liquid jet and recovery system 240 that is similar to the system 220 described above with reference to FIG. 10 but is different in that a liquid recovery zone 250 is provided substantially all around the exposure area. The liquid recovery zone 250 may comprise a channel cut into a supporting port or a loop made of a suitable material. Individually controllable recovery nozzles 230 are located in the interior of the recovery zone 250. The zone 250 thus provided is advantageous in that the liquid 7 can be pumped out more uniformly. The source nozzles 225 may be independently controlled or used in groups, as in the embodiments explained above, to establish any of the flow patterns shown in FIGS. 6-9.
  • In the description given above, the last-stage optical element 4 may or may not be a lens. The lower surface of this optical element 4, adapted to come into direct contact with the liquid 7, tends to become soiled as particles removed from the photoresist and the impurities contained in the liquid 7 become attached to it. For this reason, the last-stage optical element 4 may be required to be exchanged from time to time, but if the element that must be replaced by a new element is a lens, the maintenance cost (or the so-called “running cost”) becomes inconveniently high and it takes a longer time for the exchange.
  • In view of this problem, the light projection unit PL of the immersion lithography apparatus 100 may be designed such that its last-stage optical element 4 is not a lens. FIGS. 13 and 14 show an example embodying this invention characterized as having a pair of mutually intimately contacting optical plates (upper plate 41 and lower plate 42) disposed below the lens 40 that would be the last-stage optical element 4 of the light projection unit PL but for these plates 41 and 42.
  • The embodiment of the invention shown in FIGS. 13 and 14 is further characterized as integrating the liquid injection nozzle arrays with the last-stage optical element of the light projection unit PL. As shown in FIGS. 13 and 14, the lower plate 42 may be provided with grooves on the upper surface so as to form liquid-passing channels 46 as the two plates 41 and 42 are attached to each other. The channels 46 each open at the lower surface, and the upper plate 41 is provided with throughholes 47 each attached to a hose 48 by way of an adaptor 49 such that the liquid 7 may be injected into and recovered from the space between the wafer W and the lower plate 42 through the channels 46, the throughholes 47 and the hoses 48.
  • The optical plates 41 and 42 may be of a known kind having parallel surfaces serving to correct the optical characteristics of the light projection unit PL such as its spherical aberration and coma. This embodiment is advantageous because the plates 41 and 42 are less expensive to replace than a lens. Substances such as organic silicon compounds may become attached to the surface of the optical plates 41 and 42 so as to adversely affect the optical characteristics of the light projection unit PL such as its light transmissivity and brightness as well as the uniformity of brightness on the wafer W but the user has only to replace the relatively inexpensive optical plates and the running cost would be significantly less than if the last-stage optical element 4 were a lens. The plates 41 and 42 and the lens 40 alternatively may be cemented together by using optical cements suitable for the wavelengths being used.
  • The liquid jet and recovery system according to this embodiment is advantageous for many reasons. First, the nozzles can be set close to the exposure area. This helps to insure a continuous layer of bubble-free liquid in the exposure region. It also helps when the edge of the wafer is being exposed because the edge of the wafer is a discontinuity and may perturb the liquid layer, causing bubbles to enter the region being exposed. Second, the layer of liquid around the nozzles is roughly continuous and uniform, allowing for capillary action to help make certain that the liquid layer is uniform. Third, the lens may be of a material such as calcium fluoride that degrades and dissolves in water while the plates may be a material such as fused silica that is stable in contact with water. Fourth, the region between the channels is open for auxiliary optical beams. These beams may be used for through-the-lens focusing, or for other purposes.
  • Systems according to this invention are generally capable of providing a uniform, bubble-free layer of water between the optical element and the wafer. It may also improve the speed for filling the gap and removing the liquid in the outward areas of the lens or the stage areas surrounding the wafer. Furthermore, it will prevent degradation of the lens or the surface of the optics that may be affected by the contact with the immersion fluid.
  • FIG. 2 is referenced next to describe a process for fabricating a semiconductor device by using an immersion lithography apparatus incorporating a liquid jet and recovery system embodying this invention. In step 301 the device's function and performance characteristics are designed. Next, in step 302, a mask (reticle) having a pattern is designed according to the previous designing step, and in a parallel step 303, a wafer is made from a silicon material. The mask pattern designed in step 302 is exposed onto the wafer from step 303 in step 304 by a photolithography system such as the systems described above. In step 305 the semiconductor device is assembled (including the dicing process, bonding process and packaging process), then finally the device is inspected in step 306.
  • FIG. 3 illustrates a detailed flowchart example of the above-mentioned step 304 in the case of fabricating semiconductor devices. In step 311 (oxidation step), the wafer surface is oxidized. In step 312 (CVD step), an insulation film is formed on the wafer surface. In step 313 (electrode formation step), electrodes are formed on the wafer by vapor deposition. In step 314 (ion implantation step), ions are implanted in the wafer. The aforementioned steps 311-314 form the preprocessing steps for wafers during wafer processing, and selection is made at each step according to processing requirements.
  • At each stage of wafer processing, when the above-mentioned preprocessing steps have been completed, the following post-processing steps are implemented. During post-processing, initially, in step 315 (photoresist formation step), photoresist is applied to a wafer. Next, in step 316 (exposure step), the above-mentioned exposure device is used to transfer the circuit pattern of a mask (reticle) onto a wafer. Then, in step 317 (developing step), the exposed wafer is developed, and in step 318 (etching step), parts other than residual photoresist (exposed material surface) are removed by etching. In step 319 (photoresist removal step), unnecessary photoresist remaining after etching is removed. Multiple circuit patterns are formed by repetition of these preprocessing and post-processing steps.
  • While a lithography system of this invention has been described in terms of several preferred embodiments, there are alterations, permutations, and various equivalents which fall within the scope of this invention. It also should be noted that there are many alternative ways of implementing the methods and apparatus of the invention. It also goes without saying that the liquid need not be water but may be perfluoropolyether (PFPE) such as Fomblin oil used when the light source is F2 laser (157 mn).

Claims (2)

1. A liquid immersion lithography apparatus comprising:
a stage on which a wafer is held;
a projection system by which a pattern image is projected to an exposure region through an immersion liquid to expose the wafer on the stage;
a plurality of supply openings arranged to surround the exposure region, via which the liquid is supplied from above the exposure region; and
a plurality of recovery openings arranged to surround the exposure region, via which the liquid is collected from above the exposure region,
wherein a part of the supply openings are selected so as to supply the liquid ahead of the exposure region in a direction in which the stage moves.
2. The apparatus according to claim 1, wherein a part of the recovery openings are selected so as to collect the supplied liquid.
US13/200,982 2003-04-11 2011-10-06 Liquid jet and recovery system for immersion lithography Abandoned US20120019792A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US13/200,982 US20120019792A1 (en) 2003-04-11 2011-10-06 Liquid jet and recovery system for immersion lithography
US14/283,827 US9304409B2 (en) 2003-04-11 2014-05-21 Liquid jet and recovery system for immersion lithography
US15/086,675 US9785057B2 (en) 2003-04-11 2016-03-31 Liquid jet and recovery system for immersion lithography
US15/723,628 US10185222B2 (en) 2003-04-11 2017-10-03 Liquid jet and recovery system for immersion lithography
US16/234,264 US20190129311A1 (en) 2003-04-11 2018-12-27 Liquid jet and recovery system for immersion lithography

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US46278603P 2003-04-11 2003-04-11
PCT/US2004/010071 WO2004092830A2 (en) 2003-04-11 2004-04-01 Liquid jet and recovery system for immersion lithography
US11/236,759 US7443482B2 (en) 2003-04-11 2005-09-28 Liquid jet and recovery system for immersion lithography
US12/232,513 US8059258B2 (en) 2003-04-11 2008-09-18 Liquid jet and recovery system for immersion lithography
US13/200,982 US20120019792A1 (en) 2003-04-11 2011-10-06 Liquid jet and recovery system for immersion lithography

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US12/232,513 Division US8059258B2 (en) 2003-04-11 2008-09-18 Liquid jet and recovery system for immersion lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/283,827 Division US9304409B2 (en) 2003-04-11 2014-05-21 Liquid jet and recovery system for immersion lithography

Publications (1)

Publication Number Publication Date
US20120019792A1 true US20120019792A1 (en) 2012-01-26

Family

ID=33299990

Family Applications (9)

Application Number Title Priority Date Filing Date
US11/236,759 Expired - Fee Related US7443482B2 (en) 2003-04-11 2005-09-28 Liquid jet and recovery system for immersion lithography
US11/808,850 Expired - Fee Related US7932989B2 (en) 2003-04-11 2007-06-13 Liquid jet and recovery system for immersion lithography
US12/232,513 Expired - Fee Related US8059258B2 (en) 2003-04-11 2008-09-18 Liquid jet and recovery system for immersion lithography
US12/923,948 Abandoned US20110031416A1 (en) 2003-04-11 2010-10-15 Liquid jet and recovery system for immersion lithography
US13/200,982 Abandoned US20120019792A1 (en) 2003-04-11 2011-10-06 Liquid jet and recovery system for immersion lithography
US14/283,827 Expired - Fee Related US9304409B2 (en) 2003-04-11 2014-05-21 Liquid jet and recovery system for immersion lithography
US15/086,675 Expired - Fee Related US9785057B2 (en) 2003-04-11 2016-03-31 Liquid jet and recovery system for immersion lithography
US15/723,628 Expired - Fee Related US10185222B2 (en) 2003-04-11 2017-10-03 Liquid jet and recovery system for immersion lithography
US16/234,264 Abandoned US20190129311A1 (en) 2003-04-11 2018-12-27 Liquid jet and recovery system for immersion lithography

Family Applications Before (4)

Application Number Title Priority Date Filing Date
US11/236,759 Expired - Fee Related US7443482B2 (en) 2003-04-11 2005-09-28 Liquid jet and recovery system for immersion lithography
US11/808,850 Expired - Fee Related US7932989B2 (en) 2003-04-11 2007-06-13 Liquid jet and recovery system for immersion lithography
US12/232,513 Expired - Fee Related US8059258B2 (en) 2003-04-11 2008-09-18 Liquid jet and recovery system for immersion lithography
US12/923,948 Abandoned US20110031416A1 (en) 2003-04-11 2010-10-15 Liquid jet and recovery system for immersion lithography

Family Applications After (4)

Application Number Title Priority Date Filing Date
US14/283,827 Expired - Fee Related US9304409B2 (en) 2003-04-11 2014-05-21 Liquid jet and recovery system for immersion lithography
US15/086,675 Expired - Fee Related US9785057B2 (en) 2003-04-11 2016-03-31 Liquid jet and recovery system for immersion lithography
US15/723,628 Expired - Fee Related US10185222B2 (en) 2003-04-11 2017-10-03 Liquid jet and recovery system for immersion lithography
US16/234,264 Abandoned US20190129311A1 (en) 2003-04-11 2018-12-27 Liquid jet and recovery system for immersion lithography

Country Status (3)

Country Link
US (9) US7443482B2 (en)
JP (1) JP4582089B2 (en)
WO (1) WO2004092830A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9897928B2 (en) 2011-08-18 2018-02-20 Asml Netherlands B.V. Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method

Families Citing this family (167)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100568101C (en) 2002-11-12 2009-12-09 Asml荷兰有限公司 Lithographic equipment and device making method
CN101424881B (en) 2002-11-12 2011-11-30 Asml荷兰有限公司 Lithography projection apparatus
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4362867B2 (en) 2002-12-10 2009-11-11 株式会社ニコン Exposure apparatus and device manufacturing method
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
SG171468A1 (en) 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
KR101036114B1 (en) 2002-12-10 2011-05-23 가부시키가이샤 니콘 Exposure apparatus, exposure method and method for manufacturing device
KR20050062665A (en) 2002-12-10 2005-06-23 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
DE10261775A1 (en) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Device for the optical measurement of an imaging system
TW201908879A (en) 2003-02-26 2019-03-01 日商尼康股份有限公司 Exposure apparatus, exposure method, and method for producing device
EP1610361B1 (en) 2003-03-25 2014-05-21 Nikon Corporation Exposure system and device production method
WO2004090956A1 (en) 2003-04-07 2004-10-21 Nikon Corporation Exposure apparatus and method for manufacturing device
KR101177331B1 (en) 2003-04-09 2012-08-30 가부시키가이샤 니콘 Immersion lithography fluid control system
EP2921905B1 (en) 2003-04-10 2017-12-27 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
KR101177330B1 (en) 2003-04-10 2012-08-30 가부시키가이샤 니콘 An immersion lithography apparatus
SG141425A1 (en) 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
JP4315198B2 (en) 2003-04-11 2009-08-19 株式会社ニコン Lithographic apparatus for maintaining immersion liquid under an optical assembly, immersion liquid maintenance method and device manufacturing method using them
JP4582089B2 (en) 2003-04-11 2010-11-17 株式会社ニコン Liquid jet recovery system for immersion lithography
KR101508809B1 (en) 2003-04-11 2015-04-06 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
JP2006523958A (en) 2003-04-17 2006-10-19 株式会社ニコン Optical structure of an autofocus element for use in immersion lithography
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI421906B (en) 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
TWI424470B (en) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
CN100541717C (en) 2003-05-28 2009-09-16 株式会社尼康 Exposure method, exposure device and device making method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3401946A1 (en) 2003-06-13 2018-11-14 Nikon Corporation Exposure apparatus and device manufacturing method
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
KR101146962B1 (en) 2003-06-19 2012-05-22 가부시키가이샤 니콘 Exposure device and device producing method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
DE60308161T2 (en) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographic apparatus and method for making an article
JP3862678B2 (en) 2003-06-27 2006-12-27 キヤノン株式会社 Exposure apparatus and device manufacturing method
EP2466382B1 (en) 2003-07-08 2014-11-26 Nikon Corporation Wafer table for immersion lithography
WO2005006416A1 (en) 2003-07-09 2005-01-20 Nikon Corporation Linking unit, exposure apparatus and method for manufacturing device
WO2005006418A1 (en) 2003-07-09 2005-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
EP1650787A4 (en) 2003-07-25 2007-09-19 Nikon Corp Inspection method and inspection device for projection optical system, and production method for projection optical system
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
EP2264534B1 (en) 2003-07-28 2013-07-17 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI439823B (en) * 2003-08-26 2014-06-01 尼康股份有限公司 Optical components and exposure devices
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
EP2261740B1 (en) 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
KR20180077311A (en) * 2003-08-29 2018-07-06 가부시키가이샤 니콘 Liquid recovery apparatus, exposure apparatus, exposure method, and device production method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG145780A1 (en) 2003-08-29 2008-09-29 Nikon Corp Exposure apparatus and device fabricating method
KR101748923B1 (en) * 2003-09-03 2017-06-19 가부시키가이샤 니콘 Apparatus and method for providing fluid for immersion lithography
WO2005029559A1 (en) 2003-09-19 2005-03-31 Nikon Corporation Exposure apparatus and device producing method
KR101421398B1 (en) 2003-09-29 2014-07-18 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device manufacturing method
KR20060126949A (en) 2003-10-08 2006-12-11 가부시키가이샤 니콘 Substrate transporting apparatus and method, exposure apparatus and method, and device producing method
KR101111364B1 (en) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 Substrate carrying apparatus, substrate carrying method, exposure apparatus, exposure method, and method for producing device
TW201738932A (en) 2003-10-09 2017-11-01 Nippon Kogaku Kk Exposure apparatus, exposure method, and device producing method
KR101332543B1 (en) * 2003-10-22 2013-11-25 가부시키가이샤 니콘 Exposure apparatus, exposure method, and method for manufacturing device
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4295712B2 (en) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and apparatus manufacturing method
TWI470371B (en) 2003-12-03 2015-01-21 尼康股份有限公司 An exposure apparatus, an exposure method, an element manufacturing method, and an optical component
KR101499405B1 (en) 2003-12-15 2015-03-05 가부시키가이샤 니콘 Stage system, exposure apparatus and exposure method
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005191394A (en) * 2003-12-26 2005-07-14 Canon Inc Exposing method and equipment
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076321A1 (en) 2004-02-03 2005-08-18 Nikon Corporation Exposure apparatus and method of producing device
JP4220423B2 (en) 2004-03-24 2009-02-04 株式会社東芝 Resist pattern forming method
TWI402893B (en) 2004-03-25 2013-07-21 尼康股份有限公司 Exposure method
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (en) 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1954408B (en) * 2004-06-04 2012-07-04 尼康股份有限公司 Exposure apparatus, exposure method, and method for producing device
WO2005119368A2 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
US20070103661A1 (en) * 2004-06-04 2007-05-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2966670B1 (en) 2004-06-09 2017-02-22 Nikon Corporation Exposure apparatus and device manufacturing method
US20070222959A1 (en) * 2004-06-10 2007-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP3067750B1 (en) 2004-06-10 2019-01-30 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102004033195A1 (en) * 2004-07-09 2006-02-23 Leica Microsystems Semiconductor Gmbh Device for inspecting a microscopic component
ATE441937T1 (en) 2004-07-12 2009-09-15 Nikon Corp EXPOSURE DEVICE AND COMPONENT PRODUCTION METHOD
EP1801853A4 (en) 2004-08-18 2008-06-04 Nikon Corp Exposure apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7133114B2 (en) 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006049134A1 (en) * 2004-11-01 2006-05-11 Nikon Corporation Exposure apparatus and device producing method
US7423720B2 (en) * 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
EP1681597B1 (en) 2005-01-14 2010-03-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4591093B2 (en) * 2005-01-18 2010-12-01 Jsr株式会社 Scanning exposure method
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
EP2506289A3 (en) 2005-01-31 2013-05-22 Nikon Corporation Exposure apparatus and method for manufacturing device
US8859188B2 (en) 2005-02-10 2014-10-14 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7864437B2 (en) * 2005-02-28 2011-01-04 Nikon Corporation Adaptor for microscope and microscope apparatus (microscope-use adaptor and microscope device)
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684010B2 (en) 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US7330238B2 (en) 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
JP5239337B2 (en) * 2005-04-28 2013-07-17 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3232270A3 (en) * 2005-05-12 2017-12-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054445B2 (en) 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL1030446C2 (en) * 2005-11-16 2007-05-21 Taiwan Semiconductor Mfg Photolithography tool for manufacturing semiconductor device, has wafer whose patterned portion is immersed in liquid, where liquid`s flow direction is controlled and directed outwardly by manipulating nozzle and drain assemblies
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
FR2893429B1 (en) * 2005-11-17 2009-05-08 Taiwan Semiconductor Mfg DEVICE AND METHOD FOR IMMERSION LITHOGRAPHY
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
JP4889331B2 (en) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
WO2007118014A2 (en) 2006-04-03 2007-10-18 Nikon Corporation Incidence surfaces and optical windows that are solvophobic to immersion liquids
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7701551B2 (en) * 2006-04-14 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (en) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optical imaging device with thermal damping
US7952803B2 (en) * 2006-05-15 2011-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8208116B2 (en) * 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7755740B2 (en) * 2007-02-07 2010-07-13 Canon Kabushiki Kaisha Exposure apparatus
JP4366407B2 (en) * 2007-02-16 2009-11-18 キヤノン株式会社 Exposure apparatus and device manufacturing method
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7900641B2 (en) 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
NL1036253A1 (en) 2007-12-10 2009-06-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2009267235A (en) 2008-04-28 2009-11-12 Canon Inc Exposure apparatus
US8421993B2 (en) * 2008-05-08 2013-04-16 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
EP2131241B1 (en) * 2008-05-08 2019-07-31 ASML Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
ATE548679T1 (en) 2008-05-08 2012-03-15 Asml Netherlands Bv LITHOGRAPHIC IMMERSION APPARATUS, DRYING APPARATUS, IMMERSION METROLOGY APPARATUS AND METHOD FOR PRODUCING A DEVICE
JP5097166B2 (en) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and method of operating the apparatus
NL2003225A1 (en) 2008-07-25 2010-01-26 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
NL2003333A (en) 2008-10-23 2010-04-26 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
NL2004102A (en) * 2009-02-25 2010-08-26 Asml Holding Nv A fluid handling device, an immersion lithographic apparatus and a device manufacturing method.
JP5016705B2 (en) * 2009-06-09 2012-09-05 エーエスエムエル ネザーランズ ビー.ブイ. Fluid handling structure
NL2005207A (en) 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US9152929B2 (en) 2013-01-23 2015-10-06 Splunk Inc. Real time display of statistics and values for selected regular expressions
US11343864B2 (en) * 2014-04-25 2022-05-24 Lenovo (Singapore) Pte. Ltd. Device pairing
WO2015189875A1 (en) * 2014-06-12 2015-12-17 富士電機株式会社 Impurity adding apparatus, impurity adding method, and semiconductor element manufacturing method
US20160155077A1 (en) * 2014-12-02 2016-06-02 Opower, Inc. Generating a green business guide
US20170163565A1 (en) * 2015-12-04 2017-06-08 Bank Of America Corporation System for analysis of resource usage and availability
KR102349127B1 (en) 2016-10-20 2022-01-10 에이에스엠엘 네델란즈 비.브이. A pressure control valve, a fluid handling structure for lithographic apparatus and a lithographic apparatus
US10948830B1 (en) 2019-12-23 2021-03-16 Waymo Llc Systems and methods for lithography

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080151203A1 (en) * 2002-12-10 2008-06-26 Nikon Corporation Exposure apparatus and device manufacturing method

Family Cites Families (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (en) 1982-05-21 1983-11-25 Hitachi Ltd Exposing device
JPS5919912A (en) 1982-07-26 1984-02-01 Hitachi Ltd Immersion distance holding device
DD221563A1 (en) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE
DD224448A1 (en) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION
JPS6265326A (en) 1985-09-18 1987-03-24 Hitachi Ltd Exposure device
JPS63157419A (en) 1986-12-22 1988-06-30 Toshiba Corp Fine pattern transfer apparatus
JPH04305917A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH04305915A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH0562877A (en) 1991-09-02 1993-03-12 Yasuko Shinohara Optical system for lsi manufacturing contraction projection aligner by light
JPH06124873A (en) 1992-10-09 1994-05-06 Canon Inc Liquid-soaking type projection exposure apparatus
JP2753930B2 (en) * 1992-11-27 1998-05-20 キヤノン株式会社 Immersion type projection exposure equipment
JPH07220990A (en) 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
JPH08316125A (en) 1995-05-19 1996-11-29 Hitachi Ltd Method and apparatus for projection exposing
JPH08316124A (en) * 1995-05-19 1996-11-29 Hitachi Ltd Method and apparatus for projection exposing
EP0780345A1 (en) * 1995-12-22 1997-06-25 Corning Incorporated Optical element for UV transmission
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH1133506A (en) * 1997-07-24 1999-02-09 Tadahiro Omi Fluid treatment device and cleaning treatment system
JP3747566B2 (en) 1997-04-23 2006-02-22 株式会社ニコン Immersion exposure equipment
JP3817836B2 (en) 1997-06-10 2006-09-06 株式会社ニコン EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
JPH11176727A (en) 1997-12-11 1999-07-02 Nikon Corp Projection aligner
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (en) 1998-08-11 2000-02-25 Nikon Corp Projection aligner and exposure method
US7187503B2 (en) * 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
KR100866818B1 (en) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 Projection optical system and exposure apparatus comprising the same
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
US6970232B2 (en) 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (en) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Focus detection method and imaging system with focus detection system
DE10210899A1 (en) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refractive projection lens for immersion lithography
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN100568101C (en) * 2002-11-12 2009-12-09 Asml荷兰有限公司 Lithographic equipment and device making method
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (en) * 2002-11-12 2011-02-17 Asml Netherlands Bv Immersion lithographic apparatus and method of making a device
CN101424881B (en) * 2002-11-12 2011-11-30 Asml荷兰有限公司 Lithography projection apparatus
SG121818A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (en) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optical arrangement used in the production of semiconductor components comprises a lens system arranged behind a mask, and a medium having a specified refractive index lying between the mask and the lens system
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (en) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projection lens, in particular for microlithography, and method for tuning a projection lens
TW200421444A (en) 2002-12-10 2004-10-16 Nippon Kogaku Kk Optical device and projecting exposure apparatus using such optical device
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
JP4184346B2 (en) 2002-12-13 2008-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Liquid removal in a method and apparatus for irradiating a spot on a layer
KR100971440B1 (en) 2002-12-19 2010-07-21 코닌클리케 필립스 일렉트로닉스 엔.브이. Method and device for irradiating spots on a layer
DE60307322T2 (en) 2002-12-19 2007-10-18 Koninklijke Philips Electronics N.V. METHOD AND ARRANGEMENT FOR IRRADIATING A LAYER THROUGH A LIGHT POINT
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
JP4266310B2 (en) * 2003-01-31 2009-05-20 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. Photosensitive resin composition and method for forming resin pattern using the composition
US7090964B2 (en) * 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
US7206059B2 (en) * 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) * 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR101177331B1 (en) 2003-04-09 2012-08-30 가부시키가이샤 니콘 Immersion lithography fluid control system
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
EP2921905B1 (en) 2003-04-10 2017-12-27 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
KR101177330B1 (en) 2003-04-10 2012-08-30 가부시키가이샤 니콘 An immersion lithography apparatus
SG141425A1 (en) 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
JP4315198B2 (en) 2003-04-11 2009-08-19 株式会社ニコン Lithographic apparatus for maintaining immersion liquid under an optical assembly, immersion liquid maintenance method and device manufacturing method using them
KR101508809B1 (en) 2003-04-11 2015-04-06 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
JP4582089B2 (en) * 2003-04-11 2010-11-17 株式会社ニコン Liquid jet recovery system for immersion lithography
JP2006523958A (en) 2003-04-17 2006-10-19 株式会社ニコン Optical structure of an autofocus element for use in immersion lithography
JP4146755B2 (en) * 2003-05-09 2008-09-10 松下電器産業株式会社 Pattern formation method
JP4025683B2 (en) * 2003-05-09 2007-12-26 松下電器産業株式会社 Pattern forming method and exposure apparatus
DE10324477A1 (en) 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Microlithographic projection exposure system
JP4084710B2 (en) * 2003-06-12 2008-04-30 松下電器産業株式会社 Pattern formation method
JP4054285B2 (en) * 2003-06-12 2008-02-27 松下電器産業株式会社 Pattern formation method
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (en) * 2003-06-23 2008-04-30 松下電器産業株式会社 Pattern formation method
JP4029064B2 (en) * 2003-06-23 2008-01-09 松下電器産業株式会社 Pattern formation method
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1639391A4 (en) 2003-07-01 2009-04-29 Nikon Corp Using isotopically specified fluids as optical elements
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
TWI439823B (en) 2003-08-26 2014-06-01 尼康股份有限公司 Optical components and exposure devices
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101748923B1 (en) 2003-09-03 2017-06-19 가부시키가이샤 니콘 Apparatus and method for providing fluid for immersion lithography
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) * 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
JP2007525824A (en) 2003-11-05 2007-09-06 ディーエスエム アイピー アセッツ ビー.ブイ. Method and apparatus for manufacturing a microchip
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
WO2005054953A2 (en) 2003-11-24 2005-06-16 Carl-Zeiss Smt Ag Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) * 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
WO2005059654A1 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Objective as a microlithography projection objective with at least one liquid lens
KR101200654B1 (en) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 Projection objective having a high aperture and a planar end surface
JP5102492B2 (en) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー Objective lens for microlithography projection with crystal elements
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (en) * 2004-01-06 2009-11-25 キヤノン株式会社 Exposure equipment
JP4429023B2 (en) * 2004-01-07 2010-03-10 キヤノン株式会社 Exposure apparatus and device manufacturing method
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102169226B (en) 2004-01-14 2014-04-23 卡尔蔡司Smt有限责任公司 Catadioptric projection objective
US8279524B2 (en) 2004-01-16 2012-10-02 Carl Zeiss Smt Gmbh Polarization-modulating optical element
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
EP1723467A2 (en) 2004-02-03 2006-11-22 Rochester Institute of Technology Method of photolithography using a fluid and a system thereof
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007522508A (en) 2004-02-13 2007-08-09 カール・ツアイス・エスエムテイ・アーゲー Projection objective for a microlithographic projection exposure apparatus
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) * 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) * 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
US7812926B2 (en) 2005-08-31 2010-10-12 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
US20090086338A1 (en) * 2007-09-28 2009-04-02 Carl Zeiss Smt Ag High Aperture Folded Catadioptric Projection Objective

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080151203A1 (en) * 2002-12-10 2008-06-26 Nikon Corporation Exposure apparatus and device manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9897928B2 (en) 2011-08-18 2018-02-20 Asml Netherlands B.V. Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method
US10520837B2 (en) 2011-08-18 2019-12-31 Asml Netherlands B.V. Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method
US11300890B2 (en) 2011-08-18 2022-04-12 Asml Netherlands B.V. Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
US20060023183A1 (en) 2006-02-02
JP2006523029A (en) 2006-10-05
US9304409B2 (en) 2016-04-05
US20160209762A1 (en) 2016-07-21
US20140253888A1 (en) 2014-09-11
US20180024442A1 (en) 2018-01-25
US20190129311A1 (en) 2019-05-02
US7443482B2 (en) 2008-10-28
US10185222B2 (en) 2019-01-22
US20080030698A1 (en) 2008-02-07
WO2004092830A3 (en) 2005-06-16
JP4582089B2 (en) 2010-11-17
US20110031416A1 (en) 2011-02-10
WO2004092830A2 (en) 2004-10-28
US9785057B2 (en) 2017-10-10
US8059258B2 (en) 2011-11-15
US7932989B2 (en) 2011-04-26
US20090051888A1 (en) 2009-02-26

Similar Documents

Publication Publication Date Title
US10185222B2 (en) Liquid jet and recovery system for immersion lithography
US9086636B2 (en) Optical arrangement of autofocus elements for use with immersion lithography
US8797506B2 (en) Exposure apparatus, exposure method, and device fabrication method
US7561248B2 (en) Immersion exposure technique
KR101647859B1 (en) Apparatus and method to control vacuum at porous material using multiple porous materials

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION