US20120019792A1 - Liquid jet and recovery system for immersion lithography - Google Patents
Liquid jet and recovery system for immersion lithography Download PDFInfo
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- US20120019792A1 US20120019792A1 US13/200,982 US201113200982A US2012019792A1 US 20120019792 A1 US20120019792 A1 US 20120019792A1 US 201113200982 A US201113200982 A US 201113200982A US 2012019792 A1 US2012019792 A1 US 2012019792A1
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- liquid
- nozzles
- wafer
- exposure region
- recovery
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Definitions
- This invention relates to a liquid jet and recovery system for an immersion lithography apparatus, adapted to supply a liquid into the space between a workpiece such as a wafer and the last-stage optical element such as a lens of an optical system for projecting the image of a reticle onto the workpiece.
- the image pattern is typically provided by a reticle placed on a reticle stage and projected by an optical system including an illuminator and a last-stage optical element that is disposed opposite the workpiece with a gap in between that element and the workpiece.
- the last-stage optical element may or may not be a lens and is hereinafter sometimes simply referred to as “the optical element.”
- the aforementioned gap is hereinafter referred to as “the exposure region” because the image pattern is projected onto the workpiece through this gap.
- a liquid jet and recovery system The purpose of a liquid jet and recovery system is to supply a fluid such as water into this exposure region, to entrain it there at least during the projection of the image pattern on the workpiece and to remove (or to recover) it away from the exposure region.
- arrays of nozzles are arranged to have their openings located proximal to the exposure region. According to one aspect of the invention, these nozzles are each adapted to serve selectively either as a source nozzle for supplying a fluid into the exposure region or as a recovery nozzle for recovering the fluid from the exposure region.
- a fluid controlling device is further provided, the functions of which include causing nozzles of selected one or more of these arrays on one or more of the sides of the exposure region to serve as source nozzles and causing a fluid to be supplied through them into the exposure region such that the supplied fluid contacts both the workpiece and the optical element for immersion lithography.
- the fluid controlling device also may be adapted to simultaneously cause nozzles of selected one or more of the remaining arrays to serve as recovery nozzles. Since each of the nozzles can serve selectively either as a supply nozzle or a recovery nozzle, various flow patterns can be realized by this fluid controlling device.
- the fluid may be supplied into the exposure region through the nozzles of the array on a specified side and removed through those on the array on the opposite side, the nozzles of the arrays on the remaining sides neither supplying nor recovering the fluid.
- the fluid may be supplied into the exposure region through the nozzles of mutually oppositely facing arrays and recovered through those of the arrays on the transversely facing arrays.
- a flow in a diagonal direction may be realized if the fluid is supplied from the nozzles of two arrays on mutually adjacent and mutually perpendicular sides of the exposure region and recovered through those of the remaining arrays on the oppositely facing sides.
- the fluid may be supplied through all of the nozzles surrounding substantially all around the exposure region to have the fluid entrained inside the exposure region.
- arrays of nozzles exclusively adapted to supply a fluid herein referred to as fluid-supply nozzles
- arrays of nozzles exclusively adapted to recover the fluid herein referred to as fluid-recovery nozzles
- the fluid-supply nozzles surrounding the exposure region and the fluid-recovery nozzles surrounding the fluid-supply nozzles from all sides.
- a groove is formed substantially all around the exposure region and the fluid-recovery nozzles are arranged to open into this groove such that a uniform flow can be more easily established.
- the fluid controlling device can establish the variety of flow patterns as explained above.
- this last-stage optical element comprises a pair of optical plates contacting each other across a contact plane and having channels formed on this contact plane, these channels connecting to the exposure region such that the fluid can be passed through these channels into or out of the exposure region.
- This embodiment is preferred because the fluid used for immersion lithography tends to affect the material of the optical element adversely, and lenses are more expensive and troublesome to replace than optical plates.
- FIG. 1 is a schematic cross-sectional view of an immersion lithography apparatus that incorporates the invention
- FIG. 2 is a process flow diagram illustrating an exemplary process by which semiconductor devices are fabricated using the apparatus shown in FIG. 1 according to the invention
- FIG. 3 is a flowchart of the wafer processing step shown in FIG. 2 in the case of fabricating semiconductor devices according to the invention
- FIG. 4 is a schematic plan view of a liquid jet and recovery system embodying this invention that may be incorporated in the lithography apparatus of FIG. 1 ;
- FIG. 5 is a schematic side view of the liquid jet and recovery system of FIG. 4 ;
- FIGS. 6-9 are schematic plan views of the liquid jet and recovery system of FIGS. 4 and 5 to show various flow patterns that may be established;
- FIG. 10 is a schematic plan view of another liquid jet and recovery system embodying this invention.
- FIG. 11 is a schematic plan view of still another liquid jet and recovery system embodying this invention.
- FIG. 12 is a schematic side view of the liquid jet and recovery system of FIG. 11 ;
- FIG. 13 is a schematic side view of still another liquid jet and recovery system embodying this invention.
- FIG. 14 is a schematic plan view of the liquid jet and recovery system of FIG. 13 .
- FIG. 1 shows an immersion lithography apparatus 100 that may incorporate a liquid jet and recovery system embodying this invention, however, this exemplary example of an immersion lithography apparatus itself is not intended to limit the scope of the invention.
- the immersion lithography apparatus 100 comprises an illuminator optical unit 1 including a light source such as a KrF excimer laser unit, an optical integrator (or homogenizer) and a lens and serving to emit pulsed ultraviolet light IL with wavelength 248 nm to be made incident to a pattern on a reticle R.
- the pattern on the reticle R is projected onto a wafer W coated with a photoresist at a specified magnification (such as 1/4 or 1/5) through a telecentric light projection unit PL.
- the pulsed light IL may alternatively be ArF excimer laser light with wavelength 193 nm, F 2 laser light with wavelength 157 nm or the i-line of a mercury lamp with wavelength 365 nm.
- the coordinate system with X-, Y- and Z-axes as shown in FIG. 1 is referenced to explain the directions in describing the structure and functions of the lithography apparatus 100 .
- the light projection unit PL is illustrated in FIG. 1 only by way of its last-stage optical element (such as a lens) 4 disposed opposite to the wafer W and a cylindrical housing 3 containing all the others of its components.
- the reticle R is supported on a reticle stage RST incorporating a mechanism for moving the reticle R in the X-direction, the Y-direction and the rotary direction around the Z-axis.
- the two-dimensional position and orientation of the reticle R on the reticle stage RST are detected by a laser interferometer (not shown) in real time and the positioning of the reticle R is effected by a main control unit 14 on the basis of the detection thus made.
- the wafer W is held by a wafer holder (not shown) on a Z-stage 9 for controlling the focusing position (along the Z-axis) and the tilting angle of the wafer W.
- the Z-stage 9 is affixed to an XY-stage 10 adapted to move in the XY-plane substantially parallel to the image-forming surface of the light projection unit PL.
- the XY-stage 10 is set on a base 11 .
- the Z-stage 9 serves to match the wafer surface with the image surface of the light projection unit PL by adjusting the focusing position (along the Z-axis) and the tilting angle of the wafer W by the auto-focusing and auto-leveling method
- the XY-stage 10 serves to adjust the position of the wafer W in the X-direction and the Y-direction.
- the two-dimensional position and orientation of the Z-stage 9 (and hence also of the wafer W) are monitored in real time by another laser interferometer 13 with reference to a mobile mirror 12 affixed to the Z-stage 9 .
- Control data based on the results of this monitoring are transmitted from the main control unit 14 to a stage-driving unit 15 adapted to control the motions of the Z-stage 9 and the XY-stage 10 according to the received control data.
- the projection light is made to sequentially move from one to another of different exposure positions on the wafer W according to the pattern on the reticle R in a step-and-repeat routine or a step-and-scan routine.
- the lithography apparatus 100 being described with reference to FIG. 1 is an immersion lithography apparatus and is hence adapted to have a liquid 7 of a specified kind such as water filling the space between the surface of the wafer W and the lower surface of the last-stage optical element 4 of the light projection unit PL at least while the pattern image of the reticle R is being copied onto the wafer W.
- a liquid 7 of a specified kind such as water filling the space between the surface of the wafer W and the lower surface of the last-stage optical element 4 of the light projection unit PL at least while the pattern image of the reticle R is being copied onto the wafer W.
- the last-stage optical element 4 of the light projection unit PL is detachably affixed to the cylindrical housing 3 .
- the liquid 7 is supplied from a liquid supply unit 5 that may comprise a tank, a pressure pump and a temperature regulator (not individually shown) to the space above the wafer W under a temperature-regulated condition and is collected by a liquid recovery unit 6 .
- the temperature of the liquid 7 is regulated to be approximately the same as the temperature inside the chamber in which the lithography apparatus 100 itself is disposed.
- Source nozzles 21 through which the liquid 7 is supplied from the supply unit 5 and recovery nozzles 23 through which the liquid 7 is collected into the recovery unit 6 are only schematically shown. Their arrangements will be described more in detail below because they are parts of a liquid jet and recovery system to which this invention relates.
- FIGS. 4 and 5 show schematically the design of a liquid jet and recovery system 200 embodying this invention which may be incorporated in the lithography apparatus 100 described above, FIG. 5 being its horizontal side view and FIG. 4 being its plan view.
- the design is characterized as having a large plural number of nozzles 210 arranged in a quasi-continuous manner in arrays on all sides of the exposure area by the light projection unit PL.
- the nozzles 210 are arranged in four arrays 211 , 212 , 213 and 214 , each of the arrays being on one side of a rectangular formation.
- FIG. 1 showed the source nozzles 21 connected to the liquid supply unit 5 and the recovery nozzles 23 connected to the liquid recovery unit 6 separately, it was for the convenience of illustration.
- the nozzles 210 shown in FIGS. 4 and 5 instead are each adapted to function both as a source nozzle and as a recovery nozzle, or explained more precisely, to be controlled so as to function selectively either as a source nozzle or as a recovery nozzle under the control of the main control unit 14 .
- FIGS. 6-9 show different ways in which the liquid jet and recovery system 200 of FIGS. 4 and 5 may be operated.
- FIG. 6 shows an example in which the wafer scan direction is as shown by an arrow and the nozzles 210 in one of the arrays (i.e., array 213 ) are controlled so as to function as source nozzles while those in the opposite array 211 are controlled so as to function as recovery nozzles, those in the remaining two arrays 212 and 214 being controlled to function neither as source nozzles nor as recovery nozzles.
- the flow pattern of the liquid 7 will be as shown by parallel arrows.
- FIG. 7 shows another example in which the nozzles 210 in mutually opposite arrays (i.e., arrays 211 and 213 ) are controlled so as to function as source nozzles while those in the remaining arrays 212 and 214 are controlled so as to function as recovery nozzles.
- the resultant flow pattern of the liquid 7 will be as shown by arcuate arrows.
- the wafer W may be moved in two scanning directions while the liquid 7 is directed in two orthogonal directions.
- FIG. 8 shows still another example in which all nozzles 210 in all of the arrays are controlled so as to function as source nozzles, serving to entrain the liquid 7 in the region below the projection lens of the light projection unit PL between its last-stage optical element 4 and the wafer W, the flow pattern being shown by radially outwardly pointing arrows.
- FIG. 9 shows still another example in which the nozzles 210 in two mutually adjacent arrays (i.e., arrays 211 and 212 ) are controlled so as to function as source nozzles and those in the remaining arrays 213 and 214 are controlled so as to function as recovery nozzles.
- the resultant flow pattern of the liquid 7 is shown by diagonal arrows.
- the nozzles 210 are individually controlled, or the jets are connected to valves that can be selectively set on and off as source or recovery. They may be arranged such that a single valve may control several jets together. The jets may be individual parts or integrated together as a single unit. The valve shown in FIG. 5 , therefore, may be regarded as being connected to only one nozzle or to a group of nozzles. Alternatively, the nozzles may be controlled as groups. For example, group 211 may be controlled by a single valve or groups 211 and 213 may be controlled by a single valve.
- FIG. 10 shows another liquid jet and recovery system 220 with an alternative arrangement characterized as providing source nozzles 225 and recovery nozzles 230 independently.
- the system 220 shown in FIG. 10 is provided with the source nozzles 225 which are not adapted to function as a recovery nozzle and the recovery nozzles 230 which are not adapted to function as a source nozzle.
- the source nozzles 225 and the recovery nozzles 230 are separately arranged in arrays around the exposure area, the arrays of the source nozzles 225 being each arranged inside the corresponding one of the arrays of the recovery nozzles 230 .
- Each nozzle may be configured with a valve to turn the nozzle on or off. Alternatively, a single valve may control several jets together. Any of the flow patterns described above with reference to FIGS. 6-9 can be established with the system 220 shown in FIG. 10 .
- FIGS. 11 and 12 show still another liquid jet and recovery system 240 that is similar to the system 220 described above with reference to FIG. 10 but is different in that a liquid recovery zone 250 is provided substantially all around the exposure area.
- the liquid recovery zone 250 may comprise a channel cut into a supporting port or a loop made of a suitable material.
- Individually controllable recovery nozzles 230 are located in the interior of the recovery zone 250 .
- the zone 250 thus provided is advantageous in that the liquid 7 can be pumped out more uniformly.
- the source nozzles 225 may be independently controlled or used in groups, as in the embodiments explained above, to establish any of the flow patterns shown in FIGS. 6-9 .
- the last-stage optical element 4 may or may not be a lens.
- the lower surface of this optical element 4 adapted to come into direct contact with the liquid 7 , tends to become soiled as particles removed from the photoresist and the impurities contained in the liquid 7 become attached to it.
- the last-stage optical element 4 may be required to be exchanged from time to time, but if the element that must be replaced by a new element is a lens, the maintenance cost (or the so-called “running cost”) becomes inconveniently high and it takes a longer time for the exchange.
- the light projection unit PL of the immersion lithography apparatus 100 may be designed such that its last-stage optical element 4 is not a lens.
- FIGS. 13 and 14 show an example embodying this invention characterized as having a pair of mutually intimately contacting optical plates (upper plate 41 and lower plate 42 ) disposed below the lens 40 that would be the last-stage optical element 4 of the light projection unit PL but for these plates 41 and 42 .
- the embodiment of the invention shown in FIGS. 13 and 14 is further characterized as integrating the liquid injection nozzle arrays with the last-stage optical element of the light projection unit PL.
- the lower plate 42 may be provided with grooves on the upper surface so as to form liquid-passing channels 46 as the two plates 41 and 42 are attached to each other.
- the channels 46 each open at the lower surface, and the upper plate 41 is provided with throughholes 47 each attached to a hose 48 by way of an adaptor 49 such that the liquid 7 may be injected into and recovered from the space between the wafer W and the lower plate 42 through the channels 46 , the throughholes 47 and the hoses 48 .
- the optical plates 41 and 42 may be of a known kind having parallel surfaces serving to correct the optical characteristics of the light projection unit PL such as its spherical aberration and coma. This embodiment is advantageous because the plates 41 and 42 are less expensive to replace than a lens. Substances such as organic silicon compounds may become attached to the surface of the optical plates 41 and 42 so as to adversely affect the optical characteristics of the light projection unit PL such as its light transmissivity and brightness as well as the uniformity of brightness on the wafer W but the user has only to replace the relatively inexpensive optical plates and the running cost would be significantly less than if the last-stage optical element 4 were a lens.
- the plates 41 and 42 and the lens 40 alternatively may be cemented together by using optical cements suitable for the wavelengths being used.
- the liquid jet and recovery system according to this embodiment is advantageous for many reasons.
- the nozzles can be set close to the exposure area. This helps to insure a continuous layer of bubble-free liquid in the exposure region. It also helps when the edge of the wafer is being exposed because the edge of the wafer is a discontinuity and may perturb the liquid layer, causing bubbles to enter the region being exposed.
- the layer of liquid around the nozzles is roughly continuous and uniform, allowing for capillary action to help make certain that the liquid layer is uniform.
- the lens may be of a material such as calcium fluoride that degrades and dissolves in water while the plates may be a material such as fused silica that is stable in contact with water.
- the region between the channels is open for auxiliary optical beams. These beams may be used for through-the-lens focusing, or for other purposes.
- Systems according to this invention are generally capable of providing a uniform, bubble-free layer of water between the optical element and the wafer. It may also improve the speed for filling the gap and removing the liquid in the outward areas of the lens or the stage areas surrounding the wafer. Furthermore, it will prevent degradation of the lens or the surface of the optics that may be affected by the contact with the immersion fluid.
- FIG. 2 is referenced next to describe a process for fabricating a semiconductor device by using an immersion lithography apparatus incorporating a liquid jet and recovery system embodying this invention.
- step 301 the device's function and performance characteristics are designed.
- step 302 a mask (reticle) having a pattern is designed according to the previous designing step, and in a parallel step 303 , a wafer is made from a silicon material.
- the mask pattern designed in step 302 is exposed onto the wafer from step 303 in step 304 by a photolithography system such as the systems described above.
- step 305 the semiconductor device is assembled (including the dicing process, bonding process and packaging process), then finally the device is inspected in step 306 .
- FIG. 3 illustrates a detailed flowchart example of the above-mentioned step 304 in the case of fabricating semiconductor devices.
- step 311 oxidation step
- step 312 CVD step
- step 313 electrode formation step
- step 314 ion implantation step
- ions are implanted in the wafer.
- the aforementioned steps 311 - 314 form the preprocessing steps for wafers during wafer processing, and selection is made at each step according to processing requirements.
- step 315 photoresist formation step
- step 316 exposure step
- step 317 developing step
- step 318 etching step
- steps other than residual photoresist exposed material surface
- step 319 photoresist removal step
- CMOS complementary metal-oxide-semiconductor
- the liquid need not be water but may be perfluoropolyether (PFPE) such as Fomblin oil used when the light source is F 2 laser (157 mn).
- PFPE perfluoropolyether
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Abstract
A liquid immersion lithography apparatus includes a stage on which a wafer is held. A projection system projects a pattern image to an exposure region through an immersion liquid to expose the wafer on the stage. A plurality of supply openings are arranged to surround the exposure region, via which the liquid is supplied from above the exposure region. A plurality of recovery openings are arranged to surround the exposure region, via which the liquid is collected from above the exposure region. A part of the supply openings are selected so as to supply the liquid ahead of the exposure region in a direction in which the stage moves.
Description
- This is a Divisional of U.S. patent application Ser. No. 12/232,513 filed , Sep. 18, 2008, which is a Divisional of U.S. patent application Ser. No. 11/236,759 filed Sep. 28, 2005 (now U.S. Pat. No. 7,443,482), which is a Continuation of International Application No. PCT/US2004/010071 filed Apr. 1, 2004, which claims the benefit of U.S. Provisional Patent Application No. 60/462,786 filed Apr. 11, 2003. The entire disclosures of each of the prior applications are hereby incorporated by reference in their entireties.
- This invention relates to a liquid jet and recovery system for an immersion lithography apparatus, adapted to supply a liquid into the space between a workpiece such as a wafer and the last-stage optical element such as a lens of an optical system for projecting the image of a reticle onto the workpiece.
- Such an immersion lithography system has been disclosed, for example, in W099/49504, which is herein incorporated by reference for describing the general background of the technology and some general considerations. One of the issues with existing immersion lithography mechanisms is the supplying and recovery of the immersion liquid. An improved system for supplying and recovering a liquid for immersion lithography is needed.
- Various liquid jet and recovery systems embodying this invention for an immersion lithography apparatus will be described below for having an image pattern projected onto a workpiece such as a wafer. The image pattern is typically provided by a reticle placed on a reticle stage and projected by an optical system including an illuminator and a last-stage optical element that is disposed opposite the workpiece with a gap in between that element and the workpiece. The last-stage optical element may or may not be a lens and is hereinafter sometimes simply referred to as “the optical element.” The aforementioned gap is hereinafter referred to as “the exposure region” because the image pattern is projected onto the workpiece through this gap.
- The purpose of a liquid jet and recovery system is to supply a fluid such as water into this exposure region, to entrain it there at least during the projection of the image pattern on the workpiece and to remove (or to recover) it away from the exposure region. In order to carry out the supply and recovery of the fluid quickly and smoothly without generating air bubbles, arrays of nozzles are arranged to have their openings located proximal to the exposure region. According to one aspect of the invention, these nozzles are each adapted to serve selectively either as a source nozzle for supplying a fluid into the exposure region or as a recovery nozzle for recovering the fluid from the exposure region. A fluid controlling device is further provided, the functions of which include causing nozzles of selected one or more of these arrays on one or more of the sides of the exposure region to serve as source nozzles and causing a fluid to be supplied through them into the exposure region such that the supplied fluid contacts both the workpiece and the optical element for immersion lithography.
- The fluid controlling device also may be adapted to simultaneously cause nozzles of selected one or more of the remaining arrays to serve as recovery nozzles. Since each of the nozzles can serve selectively either as a supply nozzle or a recovery nozzle, various flow patterns can be realized by this fluid controlling device. For example, the fluid may be supplied into the exposure region through the nozzles of the array on a specified side and removed through those on the array on the opposite side, the nozzles of the arrays on the remaining sides neither supplying nor recovering the fluid. As another example, the fluid may be supplied into the exposure region through the nozzles of mutually oppositely facing arrays and recovered through those of the arrays on the transversely facing arrays. As a third example, a flow in a diagonal direction may be realized if the fluid is supplied from the nozzles of two arrays on mutually adjacent and mutually perpendicular sides of the exposure region and recovered through those of the remaining arrays on the oppositely facing sides. Alternatively, the fluid may be supplied through all of the nozzles surrounding substantially all around the exposure region to have the fluid entrained inside the exposure region.
- According to another aspect of the invention, arrays of nozzles exclusively adapted to supply a fluid, herein referred to as fluid-supply nozzles, and arrays of nozzles exclusively adapted to recover the fluid, herein referred to as fluid-recovery nozzles, are separately provided, the fluid-supply nozzles surrounding the exposure region and the fluid-recovery nozzles surrounding the fluid-supply nozzles from all sides. According to a preferred embodiment, a groove is formed substantially all around the exposure region and the fluid-recovery nozzles are arranged to open into this groove such that a uniform flow can be more easily established. In this case too, the fluid controlling device can establish the variety of flow patterns as explained above.
- As explained above, the optical element that is disposed opposite the workpiece and that comes into direct contact with the fluid such as water need not be a lens. According to a preferred embodiment of the invention, this last-stage optical element comprises a pair of optical plates contacting each other across a contact plane and having channels formed on this contact plane, these channels connecting to the exposure region such that the fluid can be passed through these channels into or out of the exposure region. This embodiment is preferred because the fluid used for immersion lithography tends to affect the material of the optical element adversely, and lenses are more expensive and troublesome to replace than optical plates.
- The invention will be described in conjunction with the following drawings of exemplary embodiments in which like references numerals designate like elements, and in which:
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FIG. 1 is a schematic cross-sectional view of an immersion lithography apparatus that incorporates the invention; -
FIG. 2 is a process flow diagram illustrating an exemplary process by which semiconductor devices are fabricated using the apparatus shown inFIG. 1 according to the invention; -
FIG. 3 is a flowchart of the wafer processing step shown inFIG. 2 in the case of fabricating semiconductor devices according to the invention; -
FIG. 4 is a schematic plan view of a liquid jet and recovery system embodying this invention that may be incorporated in the lithography apparatus ofFIG. 1 ; -
FIG. 5 is a schematic side view of the liquid jet and recovery system ofFIG. 4 ; -
FIGS. 6-9 are schematic plan views of the liquid jet and recovery system ofFIGS. 4 and 5 to show various flow patterns that may be established; -
FIG. 10 is a schematic plan view of another liquid jet and recovery system embodying this invention; -
FIG. 11 is a schematic plan view of still another liquid jet and recovery system embodying this invention; -
FIG. 12 is a schematic side view of the liquid jet and recovery system ofFIG. 11 ; -
FIG. 13 is a schematic side view of still another liquid jet and recovery system embodying this invention; and -
FIG. 14 is a schematic plan view of the liquid jet and recovery system ofFIG. 13 . -
FIG. 1 shows animmersion lithography apparatus 100 that may incorporate a liquid jet and recovery system embodying this invention, however, this exemplary example of an immersion lithography apparatus itself is not intended to limit the scope of the invention. - As shown in
FIG. 1 , theimmersion lithography apparatus 100 comprises an illuminatoroptical unit 1 including a light source such as a KrF excimer laser unit, an optical integrator (or homogenizer) and a lens and serving to emit pulsed ultraviolet light IL with wavelength 248 nm to be made incident to a pattern on a reticle R. The pattern on the reticle R is projected onto a wafer W coated with a photoresist at a specified magnification (such as 1/4 or 1/5) through a telecentric light projection unit PL. The pulsed light IL may alternatively be ArF excimer laser light with wavelength 193 nm, F2 laser light with wavelength 157 nm or the i-line of a mercury lamp with wavelength 365 nm. In what follows, the coordinate system with X-, Y- and Z-axes as shown inFIG. 1 is referenced to explain the directions in describing the structure and functions of thelithography apparatus 100. For the convenience of disclosure and description, the light projection unit PL is illustrated inFIG. 1 only by way of its last-stage optical element (such as a lens) 4 disposed opposite to the wafer W and acylindrical housing 3 containing all the others of its components. - The reticle R is supported on a reticle stage RST incorporating a mechanism for moving the reticle R in the X-direction, the Y-direction and the rotary direction around the Z-axis. The two-dimensional position and orientation of the reticle R on the reticle stage RST are detected by a laser interferometer (not shown) in real time and the positioning of the reticle R is effected by a
main control unit 14 on the basis of the detection thus made. - The wafer W is held by a wafer holder (not shown) on a Z-
stage 9 for controlling the focusing position (along the Z-axis) and the tilting angle of the wafer W. The Z-stage 9 is affixed to an XY-stage 10 adapted to move in the XY-plane substantially parallel to the image-forming surface of the light projection unit PL. The XY-stage 10 is set on abase 11. Thus, the Z-stage 9 serves to match the wafer surface with the image surface of the light projection unit PL by adjusting the focusing position (along the Z-axis) and the tilting angle of the wafer W by the auto-focusing and auto-leveling method, and the XY-stage 10 serves to adjust the position of the wafer W in the X-direction and the Y-direction. - The two-dimensional position and orientation of the Z-stage 9 (and hence also of the wafer W) are monitored in real time by another
laser interferometer 13 with reference to amobile mirror 12 affixed to the Z-stage 9. Control data based on the results of this monitoring are transmitted from themain control unit 14 to a stage-driving unit 15 adapted to control the motions of the Z-stage 9 and the XY-stage 10 according to the received control data. At the time of an exposure, the projection light is made to sequentially move from one to another of different exposure positions on the wafer W according to the pattern on the reticle R in a step-and-repeat routine or a step-and-scan routine. - The
lithography apparatus 100 being described with reference toFIG. 1 is an immersion lithography apparatus and is hence adapted to have aliquid 7 of a specified kind such as water filling the space between the surface of the wafer W and the lower surface of the last-stage optical element 4 of the light projection unit PL at least while the pattern image of the reticle R is being copied onto the wafer W. - The last-stage optical element 4 of the light projection unit PL is detachably affixed to the
cylindrical housing 3. Theliquid 7 is supplied from aliquid supply unit 5 that may comprise a tank, a pressure pump and a temperature regulator (not individually shown) to the space above the wafer W under a temperature-regulated condition and is collected by aliquid recovery unit 6. The temperature of theliquid 7 is regulated to be approximately the same as the temperature inside the chamber in which thelithography apparatus 100 itself is disposed.Source nozzles 21 through which theliquid 7 is supplied from thesupply unit 5 andrecovery nozzles 23 through which theliquid 7 is collected into therecovery unit 6 are only schematically shown. Their arrangements will be described more in detail below because they are parts of a liquid jet and recovery system to which this invention relates. - According to this invention, multiple jets are provided to inject an immersion fluid (referenced above as the liquid 7) between the wafer W to be exposed and the last-stage optical element 4 of the light projection unit PL for projecting an image pattern thereon.
FIGS. 4 and 5 show schematically the design of a liquid jet andrecovery system 200 embodying this invention which may be incorporated in thelithography apparatus 100 described above,FIG. 5 being its horizontal side view andFIG. 4 being its plan view. The design is characterized as having a large plural number ofnozzles 210 arranged in a quasi-continuous manner in arrays on all sides of the exposure area by the light projection unit PL. According to the embodiment illustrated inFIG. 4 , thenozzles 210 are arranged in fourarrays - Although
FIG. 1 showed the source nozzles 21 connected to theliquid supply unit 5 and therecovery nozzles 23 connected to theliquid recovery unit 6 separately, it was for the convenience of illustration. Thenozzles 210 shown inFIGS. 4 and 5 instead are each adapted to function both as a source nozzle and as a recovery nozzle, or explained more precisely, to be controlled so as to function selectively either as a source nozzle or as a recovery nozzle under the control of themain control unit 14. -
FIGS. 6-9 show different ways in which the liquid jet andrecovery system 200 ofFIGS. 4 and 5 may be operated.FIG. 6 shows an example in which the wafer scan direction is as shown by an arrow and thenozzles 210 in one of the arrays (i.e., array 213) are controlled so as to function as source nozzles while those in theopposite array 211 are controlled so as to function as recovery nozzles, those in the remaining twoarrays liquid 7 will be as shown by parallel arrows. -
FIG. 7 shows another example in which thenozzles 210 in mutually opposite arrays (i.e.,arrays 211 and 213) are controlled so as to function as source nozzles while those in the remainingarrays liquid 7 will be as shown by arcuate arrows. In other words, the wafer W may be moved in two scanning directions while theliquid 7 is directed in two orthogonal directions. -
FIG. 8 shows still another example in which allnozzles 210 in all of the arrays are controlled so as to function as source nozzles, serving to entrain the liquid 7 in the region below the projection lens of the light projection unit PL between its last-stage optical element 4 and the wafer W, the flow pattern being shown by radially outwardly pointing arrows. -
FIG. 9 shows still another example in which thenozzles 210 in two mutually adjacent arrays (i.e.,arrays 211 and 212) are controlled so as to function as source nozzles and those in the remainingarrays liquid 7 is shown by diagonal arrows. - In summary, in each of these examples, the
nozzles 210 are individually controlled, or the jets are connected to valves that can be selectively set on and off as source or recovery. They may be arranged such that a single valve may control several jets together. The jets may be individual parts or integrated together as a single unit. The valve shown inFIG. 5 , therefore, may be regarded as being connected to only one nozzle or to a group of nozzles. Alternatively, the nozzles may be controlled as groups. For example,group 211 may be controlled by a single valve orgroups -
FIG. 10 shows another liquid jet andrecovery system 220 with an alternative arrangement characterized as providingsource nozzles 225 andrecovery nozzles 230 independently. In other words, unlike thesystem 200 shown inFIGS. 4-9 with nozzles each functioning selectively either as a source nozzle or as a recovery nozzle, thesystem 220 shown inFIG. 10 is provided with the source nozzles 225 which are not adapted to function as a recovery nozzle and therecovery nozzles 230 which are not adapted to function as a source nozzle. - According to the example shown in
FIG. 10 , the source nozzles 225 and therecovery nozzles 230 are separately arranged in arrays around the exposure area, the arrays of the source nozzles 225 being each arranged inside the corresponding one of the arrays of therecovery nozzles 230. Each nozzle may be configured with a valve to turn the nozzle on or off. Alternatively, a single valve may control several jets together. Any of the flow patterns described above with reference toFIGS. 6-9 can be established with thesystem 220 shown inFIG. 10 . -
FIGS. 11 and 12 show still another liquid jet andrecovery system 240 that is similar to thesystem 220 described above with reference toFIG. 10 but is different in that aliquid recovery zone 250 is provided substantially all around the exposure area. Theliquid recovery zone 250 may comprise a channel cut into a supporting port or a loop made of a suitable material. Individuallycontrollable recovery nozzles 230 are located in the interior of therecovery zone 250. Thezone 250 thus provided is advantageous in that theliquid 7 can be pumped out more uniformly. The source nozzles 225 may be independently controlled or used in groups, as in the embodiments explained above, to establish any of the flow patterns shown inFIGS. 6-9 . - In the description given above, the last-stage optical element 4 may or may not be a lens. The lower surface of this optical element 4, adapted to come into direct contact with the
liquid 7, tends to become soiled as particles removed from the photoresist and the impurities contained in theliquid 7 become attached to it. For this reason, the last-stage optical element 4 may be required to be exchanged from time to time, but if the element that must be replaced by a new element is a lens, the maintenance cost (or the so-called “running cost”) becomes inconveniently high and it takes a longer time for the exchange. - In view of this problem, the light projection unit PL of the
immersion lithography apparatus 100 may be designed such that its last-stage optical element 4 is not a lens.FIGS. 13 and 14 show an example embodying this invention characterized as having a pair of mutually intimately contacting optical plates (upper plate 41 and lower plate 42) disposed below thelens 40 that would be the last-stage optical element 4 of the light projection unit PL but for theseplates - The embodiment of the invention shown in
FIGS. 13 and 14 is further characterized as integrating the liquid injection nozzle arrays with the last-stage optical element of the light projection unit PL. As shown inFIGS. 13 and 14 , thelower plate 42 may be provided with grooves on the upper surface so as to form liquid-passingchannels 46 as the twoplates channels 46 each open at the lower surface, and theupper plate 41 is provided with throughholes 47 each attached to ahose 48 by way of anadaptor 49 such that theliquid 7 may be injected into and recovered from the space between the wafer W and thelower plate 42 through thechannels 46, the throughholes 47 and thehoses 48. - The
optical plates plates optical plates plates lens 40 alternatively may be cemented together by using optical cements suitable for the wavelengths being used. - The liquid jet and recovery system according to this embodiment is advantageous for many reasons. First, the nozzles can be set close to the exposure area. This helps to insure a continuous layer of bubble-free liquid in the exposure region. It also helps when the edge of the wafer is being exposed because the edge of the wafer is a discontinuity and may perturb the liquid layer, causing bubbles to enter the region being exposed. Second, the layer of liquid around the nozzles is roughly continuous and uniform, allowing for capillary action to help make certain that the liquid layer is uniform. Third, the lens may be of a material such as calcium fluoride that degrades and dissolves in water while the plates may be a material such as fused silica that is stable in contact with water. Fourth, the region between the channels is open for auxiliary optical beams. These beams may be used for through-the-lens focusing, or for other purposes.
- Systems according to this invention are generally capable of providing a uniform, bubble-free layer of water between the optical element and the wafer. It may also improve the speed for filling the gap and removing the liquid in the outward areas of the lens or the stage areas surrounding the wafer. Furthermore, it will prevent degradation of the lens or the surface of the optics that may be affected by the contact with the immersion fluid.
-
FIG. 2 is referenced next to describe a process for fabricating a semiconductor device by using an immersion lithography apparatus incorporating a liquid jet and recovery system embodying this invention. Instep 301 the device's function and performance characteristics are designed. Next, instep 302, a mask (reticle) having a pattern is designed according to the previous designing step, and in aparallel step 303, a wafer is made from a silicon material. The mask pattern designed instep 302 is exposed onto the wafer fromstep 303 instep 304 by a photolithography system such as the systems described above. Instep 305 the semiconductor device is assembled (including the dicing process, bonding process and packaging process), then finally the device is inspected instep 306. -
FIG. 3 illustrates a detailed flowchart example of the above-mentionedstep 304 in the case of fabricating semiconductor devices. In step 311 (oxidation step), the wafer surface is oxidized. In step 312 (CVD step), an insulation film is formed on the wafer surface. In step 313 (electrode formation step), electrodes are formed on the wafer by vapor deposition. In step 314 (ion implantation step), ions are implanted in the wafer. The aforementioned steps 311-314 form the preprocessing steps for wafers during wafer processing, and selection is made at each step according to processing requirements. - At each stage of wafer processing, when the above-mentioned preprocessing steps have been completed, the following post-processing steps are implemented. During post-processing, initially, in step 315 (photoresist formation step), photoresist is applied to a wafer. Next, in step 316 (exposure step), the above-mentioned exposure device is used to transfer the circuit pattern of a mask (reticle) onto a wafer. Then, in step 317 (developing step), the exposed wafer is developed, and in step 318 (etching step), parts other than residual photoresist (exposed material surface) are removed by etching. In step 319 (photoresist removal step), unnecessary photoresist remaining after etching is removed. Multiple circuit patterns are formed by repetition of these preprocessing and post-processing steps.
- While a lithography system of this invention has been described in terms of several preferred embodiments, there are alterations, permutations, and various equivalents which fall within the scope of this invention. It also should be noted that there are many alternative ways of implementing the methods and apparatus of the invention. It also goes without saying that the liquid need not be water but may be perfluoropolyether (PFPE) such as Fomblin oil used when the light source is F2 laser (157 mn).
Claims (2)
1. A liquid immersion lithography apparatus comprising:
a stage on which a wafer is held;
a projection system by which a pattern image is projected to an exposure region through an immersion liquid to expose the wafer on the stage;
a plurality of supply openings arranged to surround the exposure region, via which the liquid is supplied from above the exposure region; and
a plurality of recovery openings arranged to surround the exposure region, via which the liquid is collected from above the exposure region,
wherein a part of the supply openings are selected so as to supply the liquid ahead of the exposure region in a direction in which the stage moves.
2. The apparatus according to claim 1 , wherein a part of the recovery openings are selected so as to collect the supplied liquid.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/200,982 US20120019792A1 (en) | 2003-04-11 | 2011-10-06 | Liquid jet and recovery system for immersion lithography |
US14/283,827 US9304409B2 (en) | 2003-04-11 | 2014-05-21 | Liquid jet and recovery system for immersion lithography |
US15/086,675 US9785057B2 (en) | 2003-04-11 | 2016-03-31 | Liquid jet and recovery system for immersion lithography |
US15/723,628 US10185222B2 (en) | 2003-04-11 | 2017-10-03 | Liquid jet and recovery system for immersion lithography |
US16/234,264 US20190129311A1 (en) | 2003-04-11 | 2018-12-27 | Liquid jet and recovery system for immersion lithography |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46278603P | 2003-04-11 | 2003-04-11 | |
PCT/US2004/010071 WO2004092830A2 (en) | 2003-04-11 | 2004-04-01 | Liquid jet and recovery system for immersion lithography |
US11/236,759 US7443482B2 (en) | 2003-04-11 | 2005-09-28 | Liquid jet and recovery system for immersion lithography |
US12/232,513 US8059258B2 (en) | 2003-04-11 | 2008-09-18 | Liquid jet and recovery system for immersion lithography |
US13/200,982 US20120019792A1 (en) | 2003-04-11 | 2011-10-06 | Liquid jet and recovery system for immersion lithography |
Related Parent Applications (1)
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US12/232,513 Division US8059258B2 (en) | 2003-04-11 | 2008-09-18 | Liquid jet and recovery system for immersion lithography |
Related Child Applications (1)
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US14/283,827 Division US9304409B2 (en) | 2003-04-11 | 2014-05-21 | Liquid jet and recovery system for immersion lithography |
Publications (1)
Publication Number | Publication Date |
---|---|
US20120019792A1 true US20120019792A1 (en) | 2012-01-26 |
Family
ID=33299990
Family Applications (9)
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---|---|---|---|
US11/236,759 Expired - Fee Related US7443482B2 (en) | 2003-04-11 | 2005-09-28 | Liquid jet and recovery system for immersion lithography |
US11/808,850 Expired - Fee Related US7932989B2 (en) | 2003-04-11 | 2007-06-13 | Liquid jet and recovery system for immersion lithography |
US12/232,513 Expired - Fee Related US8059258B2 (en) | 2003-04-11 | 2008-09-18 | Liquid jet and recovery system for immersion lithography |
US12/923,948 Abandoned US20110031416A1 (en) | 2003-04-11 | 2010-10-15 | Liquid jet and recovery system for immersion lithography |
US13/200,982 Abandoned US20120019792A1 (en) | 2003-04-11 | 2011-10-06 | Liquid jet and recovery system for immersion lithography |
US14/283,827 Expired - Fee Related US9304409B2 (en) | 2003-04-11 | 2014-05-21 | Liquid jet and recovery system for immersion lithography |
US15/086,675 Expired - Fee Related US9785057B2 (en) | 2003-04-11 | 2016-03-31 | Liquid jet and recovery system for immersion lithography |
US15/723,628 Expired - Fee Related US10185222B2 (en) | 2003-04-11 | 2017-10-03 | Liquid jet and recovery system for immersion lithography |
US16/234,264 Abandoned US20190129311A1 (en) | 2003-04-11 | 2018-12-27 | Liquid jet and recovery system for immersion lithography |
Family Applications Before (4)
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US11/236,759 Expired - Fee Related US7443482B2 (en) | 2003-04-11 | 2005-09-28 | Liquid jet and recovery system for immersion lithography |
US11/808,850 Expired - Fee Related US7932989B2 (en) | 2003-04-11 | 2007-06-13 | Liquid jet and recovery system for immersion lithography |
US12/232,513 Expired - Fee Related US8059258B2 (en) | 2003-04-11 | 2008-09-18 | Liquid jet and recovery system for immersion lithography |
US12/923,948 Abandoned US20110031416A1 (en) | 2003-04-11 | 2010-10-15 | Liquid jet and recovery system for immersion lithography |
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US14/283,827 Expired - Fee Related US9304409B2 (en) | 2003-04-11 | 2014-05-21 | Liquid jet and recovery system for immersion lithography |
US15/086,675 Expired - Fee Related US9785057B2 (en) | 2003-04-11 | 2016-03-31 | Liquid jet and recovery system for immersion lithography |
US15/723,628 Expired - Fee Related US10185222B2 (en) | 2003-04-11 | 2017-10-03 | Liquid jet and recovery system for immersion lithography |
US16/234,264 Abandoned US20190129311A1 (en) | 2003-04-11 | 2018-12-27 | Liquid jet and recovery system for immersion lithography |
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US (9) | US7443482B2 (en) |
JP (1) | JP4582089B2 (en) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9897928B2 (en) | 2011-08-18 | 2018-02-20 | Asml Netherlands B.V. | Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method |
Families Citing this family (167)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100568101C (en) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | Lithographic equipment and device making method |
CN101424881B (en) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | Lithography projection apparatus |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP4362867B2 (en) | 2002-12-10 | 2009-11-11 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
SG171468A1 (en) | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
KR101036114B1 (en) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method and method for manufacturing device |
KR20050062665A (en) | 2002-12-10 | 2005-06-23 | 가부시키가이샤 니콘 | Exposure apparatus and method for manufacturing device |
DE10261775A1 (en) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Device for the optical measurement of an imaging system |
TW201908879A (en) | 2003-02-26 | 2019-03-01 | 日商尼康股份有限公司 | Exposure apparatus, exposure method, and method for producing device |
EP1610361B1 (en) | 2003-03-25 | 2014-05-21 | Nikon Corporation | Exposure system and device production method |
WO2004090956A1 (en) | 2003-04-07 | 2004-10-21 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
KR101177331B1 (en) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | Immersion lithography fluid control system |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
KR101177330B1 (en) | 2003-04-10 | 2012-08-30 | 가부시키가이샤 니콘 | An immersion lithography apparatus |
SG141425A1 (en) | 2003-04-10 | 2008-04-28 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
JP4315198B2 (en) | 2003-04-11 | 2009-08-19 | 株式会社ニコン | Lithographic apparatus for maintaining immersion liquid under an optical assembly, immersion liquid maintenance method and device manufacturing method using them |
JP4582089B2 (en) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | Liquid jet recovery system for immersion lithography |
KR101508809B1 (en) | 2003-04-11 | 2015-04-06 | 가부시키가이샤 니콘 | Cleanup method for optics in immersion lithography |
JP2006523958A (en) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | Optical structure of an autofocus element for use in immersion lithography |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI421906B (en) | 2003-05-23 | 2014-01-01 | 尼康股份有限公司 | An exposure method, an exposure apparatus, and an element manufacturing method |
TWI424470B (en) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
CN100541717C (en) | 2003-05-28 | 2009-09-16 | 株式会社尼康 | Exposure method, exposure device and device making method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3401946A1 (en) | 2003-06-13 | 2018-11-14 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
KR101146962B1 (en) | 2003-06-19 | 2012-05-22 | 가부시키가이샤 니콘 | Exposure device and device producing method |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
DE60308161T2 (en) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographic apparatus and method for making an article |
JP3862678B2 (en) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
EP2466382B1 (en) | 2003-07-08 | 2014-11-26 | Nikon Corporation | Wafer table for immersion lithography |
WO2005006416A1 (en) | 2003-07-09 | 2005-01-20 | Nikon Corporation | Linking unit, exposure apparatus and method for manufacturing device |
WO2005006418A1 (en) | 2003-07-09 | 2005-01-20 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
EP1650787A4 (en) | 2003-07-25 | 2007-09-19 | Nikon Corp | Inspection method and inspection device for projection optical system, and production method for projection optical system |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
EP2264534B1 (en) | 2003-07-28 | 2013-07-17 | Nikon Corporation | Exposure apparatus, method for producing device, and method for controlling exposure apparatus |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI439823B (en) * | 2003-08-26 | 2014-06-01 | 尼康股份有限公司 | Optical components and exposure devices |
US8149381B2 (en) | 2003-08-26 | 2012-04-03 | Nikon Corporation | Optical element and exposure apparatus |
EP2261740B1 (en) | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
KR20180077311A (en) * | 2003-08-29 | 2018-07-06 | 가부시키가이샤 니콘 | Liquid recovery apparatus, exposure apparatus, exposure method, and device production method |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG145780A1 (en) | 2003-08-29 | 2008-09-29 | Nikon Corp | Exposure apparatus and device fabricating method |
KR101748923B1 (en) * | 2003-09-03 | 2017-06-19 | 가부시키가이샤 니콘 | Apparatus and method for providing fluid for immersion lithography |
WO2005029559A1 (en) | 2003-09-19 | 2005-03-31 | Nikon Corporation | Exposure apparatus and device producing method |
KR101421398B1 (en) | 2003-09-29 | 2014-07-18 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device manufacturing method |
KR20060126949A (en) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | Substrate transporting apparatus and method, exposure apparatus and method, and device producing method |
KR101111364B1 (en) | 2003-10-08 | 2012-02-27 | 가부시키가이샤 자오 니콘 | Substrate carrying apparatus, substrate carrying method, exposure apparatus, exposure method, and method for producing device |
TW201738932A (en) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | Exposure apparatus, exposure method, and device producing method |
KR101332543B1 (en) * | 2003-10-22 | 2013-11-25 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and method for manufacturing device |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4295712B2 (en) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | Lithographic apparatus and apparatus manufacturing method |
TWI470371B (en) | 2003-12-03 | 2015-01-21 | 尼康股份有限公司 | An exposure apparatus, an exposure method, an element manufacturing method, and an optical component |
KR101499405B1 (en) | 2003-12-15 | 2015-03-05 | 가부시키가이샤 니콘 | Stage system, exposure apparatus and exposure method |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005191394A (en) * | 2003-12-26 | 2005-07-14 | Canon Inc | Exposing method and equipment |
EP1706793B1 (en) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
WO2005076321A1 (en) | 2004-02-03 | 2005-08-18 | Nikon Corporation | Exposure apparatus and method of producing device |
JP4220423B2 (en) | 2004-03-24 | 2009-02-04 | 株式会社東芝 | Resist pattern forming method |
TWI402893B (en) | 2004-03-25 | 2013-07-21 | 尼康股份有限公司 | Exposure method |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN1954408B (en) * | 2004-06-04 | 2012-07-04 | 尼康股份有限公司 | Exposure apparatus, exposure method, and method for producing device |
WO2005119368A2 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
US20070103661A1 (en) * | 2004-06-04 | 2007-05-10 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
EP2966670B1 (en) | 2004-06-09 | 2017-02-22 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US20070222959A1 (en) * | 2004-06-10 | 2007-09-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
EP3067750B1 (en) | 2004-06-10 | 2019-01-30 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102004033195A1 (en) * | 2004-07-09 | 2006-02-23 | Leica Microsystems Semiconductor Gmbh | Device for inspecting a microscopic component |
ATE441937T1 (en) | 2004-07-12 | 2009-09-15 | Nikon Corp | EXPOSURE DEVICE AND COMPONENT PRODUCTION METHOD |
EP1801853A4 (en) | 2004-08-18 | 2008-06-04 | Nikon Corp | Exposure apparatus and device manufacturing method |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7133114B2 (en) | 2004-09-20 | 2006-11-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006049134A1 (en) * | 2004-11-01 | 2006-05-11 | Nikon Corporation | Exposure apparatus and device producing method |
US7423720B2 (en) * | 2004-11-12 | 2008-09-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411657B2 (en) | 2004-11-17 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7405805B2 (en) | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7491661B2 (en) | 2004-12-28 | 2009-02-17 | Asml Netherlands B.V. | Device manufacturing method, top coat material and substrate |
EP1681597B1 (en) | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124351A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP4591093B2 (en) * | 2005-01-18 | 2010-12-01 | Jsr株式会社 | Scanning exposure method |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
EP2506289A3 (en) | 2005-01-31 | 2013-05-22 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
US8859188B2 (en) | 2005-02-10 | 2014-10-14 | Asml Netherlands B.V. | Immersion liquid, exposure apparatus, and exposure process |
US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7224431B2 (en) | 2005-02-22 | 2007-05-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7378025B2 (en) | 2005-02-22 | 2008-05-27 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7864437B2 (en) * | 2005-02-28 | 2011-01-04 | Nikon Corporation | Adaptor for microscope and microscope apparatus (microscope-use adaptor and microscope device) |
US7428038B2 (en) | 2005-02-28 | 2008-09-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684010B2 (en) | 2005-03-09 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing |
US7330238B2 (en) | 2005-03-28 | 2008-02-12 | Asml Netherlands, B.V. | Lithographic apparatus, immersion projection apparatus and device manufacturing method |
US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7291850B2 (en) | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
JP5239337B2 (en) * | 2005-04-28 | 2013-07-17 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3232270A3 (en) * | 2005-05-12 | 2017-12-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054445B2 (en) | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411658B2 (en) | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
NL1030446C2 (en) * | 2005-11-16 | 2007-05-21 | Taiwan Semiconductor Mfg | Photolithography tool for manufacturing semiconductor device, has wafer whose patterned portion is immersed in liquid, where liquid`s flow direction is controlled and directed outwardly by manipulating nozzle and drain assemblies |
US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
FR2893429B1 (en) * | 2005-11-17 | 2009-05-08 | Taiwan Semiconductor Mfg | DEVICE AND METHOD FOR IMMERSION LITHOGRAPHY |
US7633073B2 (en) | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US7420194B2 (en) | 2005-12-27 | 2008-09-02 | Asml Netherlands B.V. | Lithographic apparatus and substrate edge seal |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
JP4889331B2 (en) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
WO2007118014A2 (en) | 2006-04-03 | 2007-10-18 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7701551B2 (en) * | 2006-04-14 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102006021797A1 (en) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optical imaging device with thermal damping |
US7952803B2 (en) * | 2006-05-15 | 2011-05-31 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8208116B2 (en) * | 2006-11-03 | 2012-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7755740B2 (en) * | 2007-02-07 | 2010-07-13 | Canon Kabushiki Kaisha | Exposure apparatus |
JP4366407B2 (en) * | 2007-02-16 | 2009-11-18 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US7900641B2 (en) | 2007-05-04 | 2011-03-08 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
NL1036253A1 (en) | 2007-12-10 | 2009-06-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
JP2009267235A (en) | 2008-04-28 | 2009-11-12 | Canon Inc | Exposure apparatus |
US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
EP2131241B1 (en) * | 2008-05-08 | 2019-07-31 | ASML Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
ATE548679T1 (en) | 2008-05-08 | 2012-03-15 | Asml Netherlands Bv | LITHOGRAPHIC IMMERSION APPARATUS, DRYING APPARATUS, IMMERSION METROLOGY APPARATUS AND METHOD FOR PRODUCING A DEVICE |
JP5097166B2 (en) | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー.ブイ. | Lithographic apparatus and method of operating the apparatus |
NL2003225A1 (en) | 2008-07-25 | 2010-01-26 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2003333A (en) | 2008-10-23 | 2010-04-26 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2004102A (en) * | 2009-02-25 | 2010-08-26 | Asml Holding Nv | A fluid handling device, an immersion lithographic apparatus and a device manufacturing method. |
JP5016705B2 (en) * | 2009-06-09 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | Fluid handling structure |
NL2005207A (en) | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
US9152929B2 (en) | 2013-01-23 | 2015-10-06 | Splunk Inc. | Real time display of statistics and values for selected regular expressions |
US11343864B2 (en) * | 2014-04-25 | 2022-05-24 | Lenovo (Singapore) Pte. Ltd. | Device pairing |
WO2015189875A1 (en) * | 2014-06-12 | 2015-12-17 | 富士電機株式会社 | Impurity adding apparatus, impurity adding method, and semiconductor element manufacturing method |
US20160155077A1 (en) * | 2014-12-02 | 2016-06-02 | Opower, Inc. | Generating a green business guide |
US20170163565A1 (en) * | 2015-12-04 | 2017-06-08 | Bank Of America Corporation | System for analysis of resource usage and availability |
KR102349127B1 (en) | 2016-10-20 | 2022-01-10 | 에이에스엠엘 네델란즈 비.브이. | A pressure control valve, a fluid handling structure for lithographic apparatus and a lithographic apparatus |
US10948830B1 (en) | 2019-12-23 | 2021-03-16 | Waymo Llc | Systems and methods for lithography |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080151203A1 (en) * | 2002-12-10 | 2008-06-26 | Nikon Corporation | Exposure apparatus and device manufacturing method |
Family Cites Families (135)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (en) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | Exposing device |
JPS5919912A (en) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | Immersion distance holding device |
DD221563A1 (en) * | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE |
DD224448A1 (en) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
JPS6265326A (en) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | Exposure device |
JPS63157419A (en) | 1986-12-22 | 1988-06-30 | Toshiba Corp | Fine pattern transfer apparatus |
JPH04305917A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
JPH04305915A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
JPH0562877A (en) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | Optical system for lsi manufacturing contraction projection aligner by light |
JPH06124873A (en) | 1992-10-09 | 1994-05-06 | Canon Inc | Liquid-soaking type projection exposure apparatus |
JP2753930B2 (en) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | Immersion type projection exposure equipment |
JPH07220990A (en) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | Pattern forming method and exposure apparatus therefor |
JPH08316125A (en) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | Method and apparatus for projection exposing |
JPH08316124A (en) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | Method and apparatus for projection exposing |
EP0780345A1 (en) * | 1995-12-22 | 1997-06-25 | Corning Incorporated | Optical element for UV transmission |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JPH1133506A (en) * | 1997-07-24 | 1999-02-09 | Tadahiro Omi | Fluid treatment device and cleaning treatment system |
JP3747566B2 (en) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | Immersion exposure equipment |
JP3817836B2 (en) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
JPH11176727A (en) | 1997-12-11 | 1999-07-02 | Nikon Corp | Projection aligner |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (en) | 1998-08-11 | 2000-02-25 | Nikon Corp | Projection aligner and exposure method |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
KR100866818B1 (en) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | Projection optical system and exposure apparatus comprising the same |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US6970232B2 (en) | 2001-10-30 | 2005-11-29 | Asml Netherlands B.V. | Structures and methods for reducing aberration in integrated circuit fabrication systems |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (en) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Focus detection method and imaging system with focus detection system |
DE10210899A1 (en) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refractive projection lens for immersion lithography |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
CN100568101C (en) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | Lithographic equipment and device making method |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (en) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Immersion lithographic apparatus and method of making a device |
CN101424881B (en) * | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | Lithography projection apparatus |
SG121818A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (en) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optical arrangement used in the production of semiconductor components comprises a lens system arranged behind a mask, and a medium having a specified refractive index lying between the mask and the lens system |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (en) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projection lens, in particular for microlithography, and method for tuning a projection lens |
TW200421444A (en) | 2002-12-10 | 2004-10-16 | Nippon Kogaku Kk | Optical device and projecting exposure apparatus using such optical device |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
JP4184346B2 (en) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Liquid removal in a method and apparatus for irradiating a spot on a layer |
KR100971440B1 (en) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Method and device for irradiating spots on a layer |
DE60307322T2 (en) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | METHOD AND ARRANGEMENT FOR IRRADIATING A LAYER THROUGH A LIGHT POINT |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
JP4266310B2 (en) * | 2003-01-31 | 2009-05-20 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Photosensitive resin composition and method for forming resin pattern using the composition |
US7090964B2 (en) * | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US7206059B2 (en) * | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR101177331B1 (en) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | Immersion lithography fluid control system |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
KR101177330B1 (en) | 2003-04-10 | 2012-08-30 | 가부시키가이샤 니콘 | An immersion lithography apparatus |
SG141425A1 (en) | 2003-04-10 | 2008-04-28 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
JP4315198B2 (en) | 2003-04-11 | 2009-08-19 | 株式会社ニコン | Lithographic apparatus for maintaining immersion liquid under an optical assembly, immersion liquid maintenance method and device manufacturing method using them |
KR101508809B1 (en) | 2003-04-11 | 2015-04-06 | 가부시키가이샤 니콘 | Cleanup method for optics in immersion lithography |
JP4582089B2 (en) * | 2003-04-11 | 2010-11-17 | 株式会社ニコン | Liquid jet recovery system for immersion lithography |
JP2006523958A (en) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | Optical structure of an autofocus element for use in immersion lithography |
JP4146755B2 (en) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | Pattern formation method |
JP4025683B2 (en) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | Pattern forming method and exposure apparatus |
DE10324477A1 (en) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Microlithographic projection exposure system |
JP4084710B2 (en) * | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | Pattern formation method |
JP4054285B2 (en) * | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | Pattern formation method |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (en) * | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | Pattern formation method |
JP4029064B2 (en) * | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | Pattern formation method |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1639391A4 (en) | 2003-07-01 | 2009-04-29 | Nikon Corp | Using isotopically specified fluids as optical elements |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US8149381B2 (en) | 2003-08-26 | 2012-04-03 | Nikon Corporation | Optical element and exposure apparatus |
TWI439823B (en) | 2003-08-26 | 2014-06-01 | 尼康股份有限公司 | Optical components and exposure devices |
US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR101748923B1 (en) | 2003-09-03 | 2017-06-19 | 가부시키가이샤 니콘 | Apparatus and method for providing fluid for immersion lithography |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
JP2007525824A (en) | 2003-11-05 | 2007-09-06 | ディーエスエム アイピー アセッツ ビー.ブイ. | Method and apparatus for manufacturing a microchip |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
WO2005054953A2 (en) | 2003-11-24 | 2005-06-16 | Carl-Zeiss Smt Ag | Holding device for an optical element in an objective |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) * | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
WO2005059654A1 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objective as a microlithography projection objective with at least one liquid lens |
KR101200654B1 (en) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | Projection objective having a high aperture and a planar end surface |
JP5102492B2 (en) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Objective lens for microlithography projection with crystal elements |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (en) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | Exposure equipment |
JP4429023B2 (en) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
CN102169226B (en) | 2004-01-14 | 2014-04-23 | 卡尔蔡司Smt有限责任公司 | Catadioptric projection objective |
US8279524B2 (en) | 2004-01-16 | 2012-10-02 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
EP1706793B1 (en) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
EP1723467A2 (en) | 2004-02-03 | 2006-11-22 | Rochester Institute of Technology | Method of photolithography using a fluid and a system thereof |
EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007522508A (en) | 2004-02-13 | 2007-08-09 | カール・ツアイス・エスエムテイ・アーゲー | Projection objective for a microlithographic projection exposure apparatus |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
US7812926B2 (en) | 2005-08-31 | 2010-10-12 | Nikon Corporation | Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice |
US20090086338A1 (en) * | 2007-09-28 | 2009-04-02 | Carl Zeiss Smt Ag | High Aperture Folded Catadioptric Projection Objective |
-
2004
- 2004-04-01 JP JP2006509591A patent/JP4582089B2/en not_active Expired - Fee Related
- 2004-04-01 WO PCT/US2004/010071 patent/WO2004092830A2/en active Application Filing
-
2005
- 2005-09-28 US US11/236,759 patent/US7443482B2/en not_active Expired - Fee Related
-
2007
- 2007-06-13 US US11/808,850 patent/US7932989B2/en not_active Expired - Fee Related
-
2008
- 2008-09-18 US US12/232,513 patent/US8059258B2/en not_active Expired - Fee Related
-
2010
- 2010-10-15 US US12/923,948 patent/US20110031416A1/en not_active Abandoned
-
2011
- 2011-10-06 US US13/200,982 patent/US20120019792A1/en not_active Abandoned
-
2014
- 2014-05-21 US US14/283,827 patent/US9304409B2/en not_active Expired - Fee Related
-
2016
- 2016-03-31 US US15/086,675 patent/US9785057B2/en not_active Expired - Fee Related
-
2017
- 2017-10-03 US US15/723,628 patent/US10185222B2/en not_active Expired - Fee Related
-
2018
- 2018-12-27 US US16/234,264 patent/US20190129311A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080151203A1 (en) * | 2002-12-10 | 2008-06-26 | Nikon Corporation | Exposure apparatus and device manufacturing method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9897928B2 (en) | 2011-08-18 | 2018-02-20 | Asml Netherlands B.V. | Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method |
US10520837B2 (en) | 2011-08-18 | 2019-12-31 | Asml Netherlands B.V. | Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method |
US11300890B2 (en) | 2011-08-18 | 2022-04-12 | Asml Netherlands B.V. | Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
US20060023183A1 (en) | 2006-02-02 |
JP2006523029A (en) | 2006-10-05 |
US9304409B2 (en) | 2016-04-05 |
US20160209762A1 (en) | 2016-07-21 |
US20140253888A1 (en) | 2014-09-11 |
US20180024442A1 (en) | 2018-01-25 |
US20190129311A1 (en) | 2019-05-02 |
US7443482B2 (en) | 2008-10-28 |
US10185222B2 (en) | 2019-01-22 |
US20080030698A1 (en) | 2008-02-07 |
WO2004092830A3 (en) | 2005-06-16 |
JP4582089B2 (en) | 2010-11-17 |
US20110031416A1 (en) | 2011-02-10 |
WO2004092830A2 (en) | 2004-10-28 |
US9785057B2 (en) | 2017-10-10 |
US8059258B2 (en) | 2011-11-15 |
US7932989B2 (en) | 2011-04-26 |
US20090051888A1 (en) | 2009-02-26 |
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