US20090206352A1 - Luminescence conversion led - Google Patents

Luminescence conversion led Download PDF

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Publication number
US20090206352A1
US20090206352A1 US11/920,757 US92075706A US2009206352A1 US 20090206352 A1 US20090206352 A1 US 20090206352A1 US 92075706 A US92075706 A US 92075706A US 2009206352 A1 US2009206352 A1 US 2009206352A1
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US
United States
Prior art keywords
glass
led
phosphor
vitreous body
producing
Prior art date
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Abandoned
Application number
US11/920,757
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English (en)
Inventor
Daniel Becker
Herbert Brunner
Tim Fiedler
Jörg Strauss
Martin Zachau
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Osram GmbH
Ams Osram International GmbH
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Individual
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Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, PATENT-TREUHAND-GESELLSCHAFT FUR ELEKTRISCHE GLUHLAMPEN MBH reassignment OSRAM OPTO SEMICONDUCTORS GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BRUNNER, HERBERT, STRAUSS, JORG, ZACHAU, MARTIN, BECKER, DANIEL, FIEDLER, TIM
Publication of US20090206352A1 publication Critical patent/US20090206352A1/en
Assigned to OSRAM GESELLSCHAFT MIT BESCHRANKTER HAFTUNG reassignment OSRAM GESELLSCHAFT MIT BESCHRANKTER HAFTUNG MERGER (SEE DOCUMENT FOR DETAILS). Assignors: PATENT TREUHAND GESELLSCHAFT FUR ELEKTRISCHE GLUHLAMPEN MBH
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Definitions

  • the invention proceeds from a luminescence conversion LED in accordance with the preamble of claim 1 .
  • What is concerned here in particular is an LED with a high efficiency of conversion.
  • US-A 2003/025449 has already disclosed a luminescence conversion LED in which the phosphor is embedded in an environment made from glass containing material. This exhibits higher stability than the usual resins or silicones, above all in the case of chips that emit shortwave primary radiation in the UV or blue spectral region. Glass, glass ceramic or silica glass is to be regarded as suitable in this case.
  • U.S. Pat. No. 6,417,019 discloses converting the phosphor by the use of an environment with as high a refractive index as possible, namely of at least 1.5, preferably more than 2.1. However, no particular implementation is specified therefor.
  • the present invention is based on the idea of minimizing the losses in the LED through jumps in the refractive index of the various materials.
  • the phosphors are usually embedded in a cladding material. Primary and secondary radiation is scattered on the powder particles of the phosphor, and this leads to scattering losses.
  • This cladding material also surrounds the chip and constitutes an optical path
  • cladding materials are epoxy resins, silicones and hybrids of these material classes.
  • the refractive index of the glass should, on the one hand, come as close as possible to that of the phosphor.
  • the refractive index of this converter should come as close as possible to that of the semiconductor chip.
  • a further boundary condition is, of course, that the emission wavelength of the chip is suitable for exciting the phosphor to emission, and that the cladding material and this primary emission, as well as the secondary emission of the phosphors absorb as little as possible.
  • the phosphor with high index glass.
  • Many phosphors have a refractive index of from 1.7 to more than 2.
  • the phosphor is to be embedded in a medium with as high an index as possible. Losses owing to scattering and jumps in refractive index at the particles of the phosphor and total reflection, and therefore higher losses owing to absorption, can thereby be minimized in the phosphor particles.
  • a further advantage of glasses as against the known cladding materials such as epoxy resins, silicones or hybrids of these two material classes is their higher resistance to heat, something which is chiefly important for so called high power LEDs with “junction” temperatures substantially above 140° C.
  • Nanophosphors are phosphors with a mean particle size of clearly below 1 ⁇ m, particularly between 10 and 500 nm.
  • the phosphor can be enclosed in particle form by glass, and subsequently dispersed in a glass or polymer. However, the phosphor can also be dispersed directly in the glass and subsequently be brought into the desired form by shaping.
  • the phosphor particles can also be synthesized directly in the glass melt. If appropriate, it is also advantageous to machine the surfaces after this, for example by polishing, in order to obtain desired surfaces or shapes. Dispersion of the phosphor particles in a glass is performed, for example, by heating a mixture of phosphor and ground glass powder. Melting is performed, for example, in a crucible of Pt in a muffle furnace up to a temperature at which a vitreous body is produced.
  • the crucible is quenched in a water bath, and the cooled glass body is removed from the crucible.
  • a transparent, vitreous body is produced only starting from a specific temperature, to be precise, not until the glass component has partially melted.
  • 1st method Sintering a mixture of phosphor and glass powder, and optionally further additives for the more effective dispersion of the phosphor particles, to a temperature in the vicinity of the softening point of the glass.
  • the mixture can be previously pressed in order to minimize air inclusions. It is possible with the aid of this method to achieve a relatively homogeneous distribution of the phosphor in the glass as long as the temperature is not so high that reaction occurs between phosphor particles and glass and the viscosity of the glass drops sharply and the phosphor sediments in the glass.
  • the rate of cooling will depend on the type of glass and can, if appropriate, take place quickly in order to avoid crystallization of the glass.
  • the glass can be cast into a mold and optionally be pressed
  • This method can be effectively used in order to simultaneously impart optical properties.
  • a lens can be formed, for example.
  • an agglomeration of the phosphor particles is reliably avoided.
  • the phosphor particles are tightly enclosed by glass in this method.
  • 2nd method Spraying a liquid melt made from glass or suitable precursor materials with phosphor powder suspended therein. In the event of spraying and expansion caused thereby, cooling occurs immediately and phosphor grains enclosed by a glass cladding are formed. These can subsequently be sintered to form a compact vitreous body.
  • 3rd method Producing a layer of defined thickness from phosphor, and optionally glass powder as well as binder and other additives on a glass substrate, with subsequent sintering at a temperature at which no chemical reactions yet occur between glass material and phosphor. A thin layer is formed in this case in which the phosphor grains are tightly enclosed by a glass matrix. The above steps can be repeated until the desired layer thickness is achieved. In particular, it is possible to use a specifically shaped, for example plane, and even polished substrate. This method has the advantage that the shape of the converter, in particular the planarity, can be largely defined before the introduction of the phosphor, because it is scarcely influenced by the introduction of the phosphor.
  • a further advantage is that the phosphor penetrates into the substrate only on one side, and so the averted side remains largely undisturbed and largely retains its original properties, in particular the higher mechanical stability of a glass substrate without inclusions.
  • a glass/phosphor layer can advantageously be sintered on a glass substrate by supplying energy on one side. In addition to conventional heating methods, this purpose is also served by electromagnetic irradiation. In particular, one sided heating by means of a laser (for example CO 2 laser) or a microwave transmitter are on offer.
  • 4th method Applying a phosphor layer to a substrate, preferably directly to the semiconductor substrate, and depositing glass or suitable glass precursors from the gas phase into the interspaces between the phosphor grains.
  • the production of glass from the gas phase is known per se.
  • 5th method The synthesis of the phosphor particles is performed in the glass melt.
  • the precipitation of YAG:Ce crystals from a Y 2 O 3 —Al 2 O 3 —SiO 2 —CeO 2 glass melt is known, see S. Tanabe (Graduate School of Human and Environmental Sciences, Kyoto University, Kyoto, Japan): “Glass ceramic phosphors for solid-state lighting”, 79th Glass Conference, Würzburg, May 2005.
  • This method can be used with particular advantage to produce phosphor particles in the nanometer and submicrometer range that are dispersed in glass, since the agglomeration of these phosphor particles is effectively prevented.
  • Glasses with a high refractive index of typically 1.6, in particular 1.7 or more, are fundamentally suitable. Particularly suitable are barite crown glasses, lanthanum crown glass and dense flint glasses. A high refractive index is achieved by the inclusion of specific ions, Pb 2+ , Bi 3 ⁇ , Ba 2+ , Li + and Ti 4+ being particularly suitable.
  • Pb is, for example, the low processing temperature and the low tendency to devitrification.
  • a typical processing temperature here is 720 to 880° C.
  • Such glasses in particular, can themselves be especially well shaped directly to the production of optical properties, for example as dome with lens properties.
  • FIG. 1 shows a semiconductor component that serves as light source (LED) for white light
  • FIG. 2 shows an REM picture of a phosphor glass composition produced according to method 1 ;
  • FIG. 3 an REM picture of a phosphor glass composition produced according to method 3 ;
  • FIG. 4 shows a further exemplary embodiment of an LED.
  • the design of such a light source for white light is shown explicitly in FIG. 1 .
  • the light source is a semiconductor component (chip 1 ) of type InGaN with a peak emission wavelength of 460 nm and having a first and second electrical connection 2 , 3 that is embedded in an opaque basic housing 8 in the region of a cutout 9 .
  • One of the connections 3 is connected to the chip 1 via a bonding wire 14 .
  • the cutout has a wall 17 that serves as reflector for the blue primary radiation of the chip 1 .
  • the cutout 9 is filled with a casting compound 5 that contains the components of glass and phosphor pigments 6 .
  • the phosphor pigments are, for example, a mixture of a number of pigments, including YAG:Ce.
  • An alternative is TbAG:Ce. Production takes place according to one of methods 1 and 2 .
  • the REM picture in FIG. 2 shows a cross section of a solid phosphor glass composition.
  • the production took place according to method 1 , more precisely by intensive mixing of glass powder and phosphor powder and subsequent sintering at 1000° C. for 1 h.
  • the REM picture shows, firstly, that the garnet phosphor grains are tightly coated with glass without air gaps and that, secondly, it is possible to achieve a high density of YAG particles in glass without dissolving the YAG particles in the glass, and that this is possible for phosphor grains of the most varied shape and grain size.
  • the image is only an example and does not in any way constitute a restriction with regard to the density of the YAG particles in the glass, the grain size,
  • the grain distribution or the grain shape of the phosphor particles are generally freely selectable and can be optimized as a function of design.
  • the REM picture of FIG. 3 shows a phosphor glass composition converter that is produced using method 3 . It is to be seen that this method can be used to produce very thin layers with a high phosphor content. Here, as well, the phosphor grains are tightly coated with glass without an air gap. In particular, no air bubbles are enclosed in the glass.
  • a further embodiment is an LED in the case of which a suitably prepared glass plate is arranged upstream of the chip.
  • the light source is a semiconductor component (chip 1 ) of type InGaN with a peak emission wavelength of 460 nm and having a first and second electrical connection 2 , 3 that is embedded in an opaque basic housing 8 in the region of a cutout 9 .
  • One of the connections 3 is connected to the chip 1 via a bonding wire 14 .
  • the cutout has a wall 17 that serves as reflector for the blue primary radiation of the chip 1 .
  • the cutout 9 is filled with a casting compound 5 that contains immersion liquid as main component.
  • a glass plate 8 Arranged upstream thereof is a glass plate 8 that is prepared on its underside with pigments, including YAG:Ce, according to one of methods 3 and 4 .
  • High index glasses with a low softening temperature and relatively slight change in viscosity with the temperature at the softening point are to be preferred as matrix. Starting from a specific temperature, the phosphor layer diffuses into the glass plate and can no longer be removed mechanically.
  • the glass powder In order to avoid the inclusion of air bubbles, it is advantageous to subject the glass powder to a heat treatment before it is processed.
  • One alternative is to raise the melting process to temperatures of at least 1200° C. A temperature of 1400 to 1500° C. is recommended for very good homogenization. Typical homogenizing and refining methods are
  • glasses are lanthanum crown, lanthanum heavy flint, barite heavy flint and, in particular, lanthanum flint and barite flint.
  • the following table 1 shows two particular examples. The composition is specified in percent.
  • a first exemplary embodiment is as follows: a YAG:Ce powder (d 50 approximately 2 ⁇ m) and Schott 8532 glass powder are mixed at a mass ratio of 1:3 in a centrifugal rotary mixer at 3000 rpm. The mixture is heated for 30 min in a platinum crucible at 780° C. in air and then quenched in a water bath to room temperature. A glass body with a yellow body color is formed. Its surface is ground flat.
  • a second exemplary embodiment is as follows: a YAG:CE powder (d 50 approximately 2 ⁇ m) and a bismuth-borate glass powder (30% Bi 2 O 3 ) are mixed at a mass ratio of 1:3 in a centrifugal rotary mixer at 3000 rpm. The mixture is heated at 700° C. in a platinum crucible for 30 min and then quenched in a water bath to room temperature. Its surface is ground flat.
  • a third exemplary embodiment YAG:Ce powder (d 50 approximately 6 ⁇ m) and Schott 8532 glass powder are mixed at a mass ratio of 1:3 in a centrifugal rotary mixer at 2700 rpm. The mixture is slurried in ethanol. Consequently, a thin, flat glass plate of Schott 8532 glass is coated. The ethanol is vaporized to air at 50° C. The coated glass plate is heated in a Pt crucible at 780° C. for 30 min and subsequently cooled slowly to room temperature. An REM picture of the cross section is to be seen in FIG. 3 .
US11/920,757 2005-05-19 2006-05-11 Luminescence conversion led Abandoned US20090206352A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005023134.9 2005-05-19
DE102005023134A DE102005023134A1 (de) 2005-05-19 2005-05-19 Lumineszenzkonversions-LED
PCT/DE2006/000823 WO2006122524A1 (de) 2005-05-19 2006-05-11 Lumineszenzkonversions-led

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US11/920,757 Abandoned US20090206352A1 (en) 2005-05-19 2006-05-11 Luminescence conversion led
US13/033,370 Active US8690629B2 (en) 2005-05-19 2011-02-23 Luminescence conversion LED

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US (2) US20090206352A1 (de)
JP (2) JP5334573B2 (de)
DE (2) DE102005023134A1 (de)
TW (1) TWI392110B (de)
WO (1) WO2006122524A1 (de)

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US20110006329A1 (en) * 2008-02-18 2011-01-13 Nippon Electric Glass Co., Ltd. Wavelength conversion member and method for manufacturing the same
US20110189391A1 (en) * 2010-02-01 2011-08-04 Chips Unlimited, Inc. Decorative colored particle dispersion for use in surface coating compositions and method for making same
US20120057337A1 (en) * 2008-04-29 2012-03-08 Rainer Liebald Conversion material, particularly for a white or colored light souce comprising a semiconductor light source, a method for the production thereof, as well as a light source comprising said conversion material
EP2481571A1 (de) * 2009-09-25 2012-08-01 Ocean's King Lighting Science&Technology Co., Ltd. Lumineszenzglas, herstellungsverfahren und lumineszenzvorrichtung
EP2481576A1 (de) * 2009-09-25 2012-08-01 Ocean's King Lighting Science&Technology Co., Ltd. Lumineszenzglas, herstellungsverfahren und lumineszenzvorrichtung
EP2481570A1 (de) * 2009-09-25 2012-08-01 Ocean's King Lighting Science&Technology Co., Ltd. Lumineszenzglas, herstellungsverfahren und lumineszenzvorrichtung
EP2481574A1 (de) * 2009-09-25 2012-08-01 Ocean's King Lighting Science&Technology Co., Ltd. Lumineszenzglas, herstellungsverfahren und lumineszenzvorrichtung
EP2481575A1 (de) * 2009-09-25 2012-08-01 Ocean's King Lighting Science&Technology Co., Ltd. Lumineszenzglas, herstellungsverfahren und lumineszenzvorrichtung
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US20130094178A1 (en) * 2011-10-13 2013-04-18 Intematix Corporation Wavelength conversion component having photo-luminescence material embedded into a hermetic material for remote wavelength conversion
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DE102020114952A1 (de) 2020-06-05 2021-12-09 Schott Ag Hermetisch dichtes optoelektronisches Modul mit erhöhter Auskopplung von elektromagnetischer Strahlung

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