JP5334573B2 - 発光変換型led - Google Patents
発光変換型led Download PDFInfo
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- JP5334573B2 JP5334573B2 JP2008511544A JP2008511544A JP5334573B2 JP 5334573 B2 JP5334573 B2 JP 5334573B2 JP 2008511544 A JP2008511544 A JP 2008511544A JP 2008511544 A JP2008511544 A JP 2008511544A JP 5334573 B2 JP5334573 B2 JP 5334573B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 13
- 239000011521 glass Substances 0.000 claims description 70
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052761 rare earth metal Inorganic materials 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 3
- 239000010428 baryte Substances 0.000 description 3
- 229910052601 baryte Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000156 glass melt Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000005385 borate glass Substances 0.000 description 2
- 239000005331 crown glasses (windows) Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000005308 flint glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Glass Compositions (AREA)
Description
US-A 2003/025449からは、蛍光体がガラス含有材料からなる周囲環境中に埋め込まれている発光変換型LEDが既に公知である。これは、特に短波長の一次放射線をUVスペクトル領域又は青色スペクトル領域で発するチップの場合に、通常の樹脂又はシリコーンよりも高い安定性を有する。この場合、ガラス、ガラスセラミック又は石英ガラスが適しているとみなされる。
本発明の課題は、請求項1記載の上位概念に記載の、高い変換効率を有する発光変換型LEDを提供することである。
第1の方法:蛍光体粉末とガラス粉末と、並びに場合により蛍光体粒子をより良好に分散させるための他の添加物との混合物を、前記ガラスの軟化温度付近の温度で焼結。特に、空気の封入を最小化するために、前記混合物を予め圧縮することができる。この方法を用いて、蛍光体粒子とガラスとの間に反応が行われかつガラスの粘度が著しく低下し、蛍光体がガラス中で堆積するように温度が高くない場合に、ガラス中での蛍光体の比較的均一な分布を達成することができる。冷却速度はガラスの種類に依存し、かつ場合によりガラスの結晶化を避けるために急速に行うことができる。冷却のために、前記ガラスを型内に流し込み、場合により直ぐに又は引き続き圧縮することができる。この方法は、同時に光学特性を達成するために良好に使用することができる。例えばレンズを成形することができる。通常では、この場合、蛍光体粒子のアグロメレーションは確実に回避される。この蛍光体粒子は、この方法を用いてガラスによって緻密に取り囲まれる。
次に、複数の実施例に基づき本発明について詳しく説明する。図面の簡単な説明:
図1は、白色光の光源(LED)として用いられる半導体デバイスを示す。
白色LED1をInGaNチップと共に使用するために、例えばUS 5 998 925に記載されたのと類似の構造を使用する。白色光のためのこの種の光源の構造は、図1に詳細に示されている。この光源は、第1の及び第2の電気的端子3,4を備えた、ピーク発光波長460nmのInGaNタイプの半導体デバイス(チップ2)であり、前記半導体デバイスは光不透過性の基体ケーシング6中の凹設部の範囲内に埋め込まれている。端子の一方4は、ボンディングワイヤ14を介してチップ2と接続している。この凹設部は壁部9を有し、この壁部はチップ2の青色の一次放射線のためのリフレクタとして利用される。この凹設部は注型材料5で充填されていて、前記注型材料5は成分としてガラスと蛍光体顔料とを含有する。この蛍光体顔料は、例えばYAG:Ceを含む複数の顔料からなる混合物である。これとは別のものはTbAG:Ceである。この製造は方法1又は2によって行う。
− 熱的清澄:温度を1590℃まで上昇;
− 機械的撹拌又は超音波;
− 付加的ガスを槽底部内に導入;
− 意図的に大きな気泡を作成することによる化学的清澄;典型的な清澄剤はこの場合Na2SO4;この場合少なくとも1300℃の温度で実施するのが好ましい。一般に、できる限り僅かな温度上昇が必要な方法を適用するのが常に好ましい。
Claims (2)
- 放射線を発するチップを有し、前記チップは電気的端子と接続されていてかつ、少なくとも1つの基体とキャップとを有するケーシングにより取り囲まれていて、前記チップは前記基体上に設置され、かつチップの一次放射線は変換材料によって少なくとも部分的に長波長放射線に変換され、前記キャップはガラス状の物体によって形成されていて、前記変換材料は前記ガラス状の物体中に含まれている蛍光体を有しかつ前記ガラス状の物体と共にガラス−蛍光体−コンバーター複合体を形成し、前記ガラス状の物体の屈折率は少なくともn=1.7である、発光変換型LEDの製造方法において、
製造の間に次の方法工程:
a) ガラス基板上に定義された厚さで蛍光体及び前記ガラス基板と同じガラスであるガラス粉末の混合物からなる層を製造する工程;
c) ガラスの軟化点付近の温度で焼結させ、前記蛍光体を一方の側で基板中に侵入させる工程
を使用することを特徴とする、発光変換型LEDの製造方法。 - さらに、b)所望の層厚に達するまで前記工程a)を繰り返す工程を使用する、請求項1記載の発光変換型LEDの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005023134.9 | 2005-05-19 | ||
DE102005023134A DE102005023134A1 (de) | 2005-05-19 | 2005-05-19 | Lumineszenzkonversions-LED |
PCT/DE2006/000823 WO2006122524A1 (de) | 2005-05-19 | 2006-05-11 | Lumineszenzkonversions-led |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011259384A Division JP2012044225A (ja) | 2005-05-19 | 2011-11-28 | 発光変換型led |
Publications (2)
Publication Number | Publication Date |
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JP2008541465A JP2008541465A (ja) | 2008-11-20 |
JP5334573B2 true JP5334573B2 (ja) | 2013-11-06 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2008511544A Active JP5334573B2 (ja) | 2005-05-19 | 2006-05-11 | 発光変換型led |
JP2011259384A Pending JP2012044225A (ja) | 2005-05-19 | 2011-11-28 | 発光変換型led |
Family Applications After (1)
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JP2011259384A Pending JP2012044225A (ja) | 2005-05-19 | 2011-11-28 | 発光変換型led |
Country Status (5)
Country | Link |
---|---|
US (2) | US20090206352A1 (ja) |
JP (2) | JP5334573B2 (ja) |
DE (2) | DE102005023134A1 (ja) |
TW (1) | TWI392110B (ja) |
WO (1) | WO2006122524A1 (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007057812A1 (de) | 2007-11-30 | 2009-06-25 | Schott Ag | Lichtemittierende Vorrichtung und Verfahren zu deren Herstellung sowie Lichtkonverter und dessen Verwendung |
JP5311281B2 (ja) * | 2008-02-18 | 2013-10-09 | 日本電気硝子株式会社 | 波長変換部材およびその製造方法 |
DE102008021438A1 (de) * | 2008-04-29 | 2009-12-31 | Schott Ag | Konversionsmaterial insbesondere für eine, eine Halbleiterlichtquelle umfassende weiße oder farbige Lichtquelle, Verfahren zu dessen Herstellung sowie dieses Konversionsmaterial umfassende Lichtquelle |
DE102008021436A1 (de) * | 2008-04-29 | 2010-05-20 | Schott Ag | Optik-Konverter-System für (W)LEDs |
DE102008033394B4 (de) | 2008-07-16 | 2018-01-25 | Osram Oled Gmbh | Bauteil mit einem ersten und einem zweiten Substrat |
WO2011035478A1 (zh) * | 2009-09-25 | 2011-03-31 | 海洋王照明科技股份有限公司 | 发光玻璃、其制造方法及发光装置 |
JP5635103B2 (ja) * | 2009-09-25 | 2014-12-03 | ▲海▼洋王照明科技股▲ふん▼有限公司 | 発光ガラス及びその製造方法、並びに発光装置 |
WO2011035480A1 (zh) * | 2009-09-25 | 2011-03-31 | 海洋王照明科技股份有限公司 | 发光玻璃、其制造方法及发光装置 |
CN102548756A (zh) * | 2009-09-25 | 2012-07-04 | 海洋王照明科技股份有限公司 | 发光玻璃、其制造方法及发光装置 |
JP2013506273A (ja) * | 2009-09-25 | 2013-02-21 | オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド | 半導体発光装置及びそのパッケージ方法 |
EP2481571B1 (en) * | 2009-09-25 | 2017-05-31 | Ocean's King Lighting Science & Technology Co., Ltd. | Luminescent glass, producing method thereof and luminescent device |
EP2481570B1 (en) * | 2009-09-25 | 2016-03-23 | Ocean's King Lighting Science&Technology Co., Ltd. | Luminescent glass, producing method thereof and luminescent device |
CN102574367A (zh) * | 2009-09-25 | 2012-07-11 | 海洋王照明科技股份有限公司 | 发光玻璃、其制造方法及发光装置 |
US9457375B2 (en) * | 2010-02-01 | 2016-10-04 | Chips Unlimited, Inc. | Decorative colored particle dispersion for use in surface coating compositions and method for making same |
DE102010009456A1 (de) | 2010-02-26 | 2011-09-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement mit einem Halbleiterchip und einem Konversionselement und Verfahren zu dessen Herstellung |
DE102010028776A1 (de) * | 2010-05-07 | 2011-11-10 | Osram Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement |
DE102010042217A1 (de) | 2010-10-08 | 2012-04-12 | Osram Ag | Optoelektronisches Halbleiterbauelement und Verfahren zu seiner Herstellung |
US10158057B2 (en) | 2010-10-28 | 2018-12-18 | Corning Incorporated | LED lighting devices |
KR20140009987A (ko) * | 2010-10-28 | 2014-01-23 | 코닝 인코포레이티드 | Led 광 제품용 유리 프릿 물질을 포함하는 형광체 |
DE102011009369A1 (de) * | 2011-01-25 | 2012-07-26 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
KR20120121588A (ko) * | 2011-04-27 | 2012-11-06 | 삼성전자주식회사 | 발광소자 패키지 및 이의 제조방법 |
DE102011078663A1 (de) * | 2011-07-05 | 2013-01-10 | Osram Ag | Verfahren zur Herstellung eines Konversionselements und Konversionselement |
KR101772588B1 (ko) | 2011-08-22 | 2017-09-13 | 한국전자통신연구원 | 클리어 컴파운드 에폭시로 몰딩한 mit 소자 및 그것을 포함하는 화재 감지 장치 |
US9365766B2 (en) * | 2011-10-13 | 2016-06-14 | Intematix Corporation | Wavelength conversion component having photo-luminescence material embedded into a hermetic material for remote wavelength conversion |
DE102012005654B4 (de) | 2011-10-25 | 2021-03-04 | Schott Ag | Optischer Konverter für hohe Leuchtdichten |
JP6149309B2 (ja) * | 2012-03-30 | 2017-06-21 | コーニング インコーポレイテッド | Led蛍光体用のビスマスホウ酸塩ガラス封着剤 |
DE102012212086A1 (de) * | 2012-07-11 | 2014-01-16 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen einer komponente eines optoelektronischen bauelements und verfahren zum herstellen eines optoelektronischen bauelements |
DE102012220980A1 (de) | 2012-11-16 | 2014-05-22 | Osram Gmbh | Optoelektronisches halbleiterbauelement |
US9231168B2 (en) | 2013-05-02 | 2016-01-05 | Industrial Technology Research Institute | Light emitting diode package structure |
DE102013226630A1 (de) * | 2013-12-19 | 2015-06-25 | Osram Gmbh | Konversionselement, Bauelement und Verfahren zur Herstellung eines Bauelements |
JP6152801B2 (ja) * | 2014-01-21 | 2017-06-28 | 豊田合成株式会社 | 発光装置及びその製造方法 |
JP2015142046A (ja) * | 2014-01-29 | 2015-08-03 | シャープ株式会社 | 波長変換部材、発光装置、および波長変換部材の製造方法 |
JP6575314B2 (ja) * | 2015-11-13 | 2019-09-18 | 日本電気硝子株式会社 | 波長変換部材の製造方法及び波長変換部材 |
DE102017212030A1 (de) * | 2017-07-13 | 2019-01-17 | Tridonic Jennersdorf Gmbh | LED/LD-Beleuchtungsvorrichtung mit neuartiger Remote-Leuchtstoff-Konfiguration und Verfahren zur Herstellung einer solchen |
JP2019164240A (ja) * | 2018-03-19 | 2019-09-26 | セイコーエプソン株式会社 | 波長変換素子、光源装置およびプロジェクター |
DE102020114952A1 (de) | 2020-06-05 | 2021-12-09 | Schott Ag | Hermetisch dichtes optoelektronisches Modul mit erhöhter Auskopplung von elektromagnetischer Strahlung |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0391911A (ja) | 1989-09-05 | 1991-04-17 | Mitsubishi Petrochem Co Ltd | 電解コンデンサ用電解液 |
JPH0391911U (ja) * | 1990-01-09 | 1991-09-19 | ||
JPH06324204A (ja) * | 1993-05-17 | 1994-11-25 | Topcon Corp | 光路長差形成光学部材 |
JPH08162676A (ja) | 1994-12-02 | 1996-06-21 | Nichia Chem Ind Ltd | 発光ダイオード |
JPH09175831A (ja) * | 1995-09-21 | 1997-07-08 | Kagaku Gijutsu Shinko Jigyodan | Tm3+ドープ青色発光結晶化ガラスとその製造法 |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JP3091911B2 (ja) | 1997-10-09 | 2000-09-25 | 株式会社ジェッター | コイン研磨装置 |
JPH11177129A (ja) | 1997-12-16 | 1999-07-02 | Rohm Co Ltd | チップ型led、ledランプおよびledディスプレイ |
JPH11293420A (ja) * | 1998-04-08 | 1999-10-26 | Tdk Corp | 鉄系軟磁性焼結体、およびその製造方法 |
DE19820072C1 (de) | 1998-05-06 | 1999-06-24 | Schott Glas | Bleifreie Lanthankrongläser und Lanthanflintgläser |
US6255239B1 (en) * | 1998-12-04 | 2001-07-03 | Cerdec Corporation | Lead-free alkali metal-free glass compositions |
JP2001177145A (ja) * | 1999-12-21 | 2001-06-29 | Toshiba Electronic Engineering Corp | 半導体発光素子およびその製造方法 |
JP2002004880A (ja) | 2000-06-21 | 2002-01-09 | Ishikawajima Harima Heavy Ind Co Ltd | 簡便型機器検査装置 |
JP2002141556A (ja) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | 改良された光抽出効果を有する発光ダイオード |
JP2002201041A (ja) * | 2000-10-23 | 2002-07-16 | Hoya Corp | ガラス成形品の製造方法、その方法で得られた光学素子およびガラスの処理方法 |
JP4430264B2 (ja) * | 2001-03-19 | 2010-03-10 | 日亜化学工業株式会社 | 表面実装型発光装置 |
US6417019B1 (en) | 2001-04-04 | 2002-07-09 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting diode |
US6686676B2 (en) * | 2001-04-30 | 2004-02-03 | General Electric Company | UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same |
DE10137641A1 (de) * | 2001-08-03 | 2003-02-20 | Osram Opto Semiconductors Gmbh | Hybrid-LED |
JP2003101115A (ja) * | 2001-09-20 | 2003-04-04 | Yamaha Corp | 光半導体モジュール用パッケージ |
US6734465B1 (en) * | 2001-11-19 | 2004-05-11 | Nanocrystals Technology Lp | Nanocrystalline based phosphors and photonic structures for solid state lighting |
JP4193471B2 (ja) * | 2001-12-14 | 2008-12-10 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
JP4158012B2 (ja) | 2002-03-06 | 2008-10-01 | 日本電気硝子株式会社 | 発光色変換部材 |
US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
JP2004046031A (ja) | 2002-07-16 | 2004-02-12 | Hitachi Cable Ltd | フィルム状ガラス導波路及びその製造方法 |
JP2004152993A (ja) * | 2002-10-30 | 2004-05-27 | Okaya Electric Ind Co Ltd | 発光ダイオード |
JP2004200531A (ja) * | 2002-12-20 | 2004-07-15 | Stanley Electric Co Ltd | 面実装型led素子 |
JP2004273798A (ja) * | 2003-03-10 | 2004-09-30 | Toyoda Gosei Co Ltd | 発光デバイス |
DE10311820A1 (de) * | 2003-03-13 | 2004-09-30 | Schott Glas | Halbleiterlichtquelle |
JP2005072129A (ja) * | 2003-08-21 | 2005-03-17 | Nec Lighting Ltd | 可視光線発光装置とその製造方法及び表示装置 |
JP4370861B2 (ja) * | 2003-09-03 | 2009-11-25 | パナソニック電工株式会社 | 発光素子及びその製造方法 |
US7553683B2 (en) * | 2004-06-09 | 2009-06-30 | Philips Lumiled Lighting Co., Llc | Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices |
-
2005
- 2005-05-19 DE DE102005023134A patent/DE102005023134A1/de not_active Withdrawn
-
2006
- 2006-05-11 DE DE112006000889T patent/DE112006000889A5/de not_active Ceased
- 2006-05-11 JP JP2008511544A patent/JP5334573B2/ja active Active
- 2006-05-11 WO PCT/DE2006/000823 patent/WO2006122524A1/de active Application Filing
- 2006-05-11 US US11/920,757 patent/US20090206352A1/en not_active Abandoned
- 2006-05-17 TW TW095117467A patent/TWI392110B/zh active
-
2011
- 2011-02-23 US US13/033,370 patent/US8690629B2/en active Active
- 2011-11-28 JP JP2011259384A patent/JP2012044225A/ja active Pending
Also Published As
Publication number | Publication date |
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US20110143627A1 (en) | 2011-06-16 |
TWI392110B (zh) | 2013-04-01 |
DE102005023134A1 (de) | 2006-11-23 |
JP2012044225A (ja) | 2012-03-01 |
WO2006122524A1 (de) | 2006-11-23 |
JP2008541465A (ja) | 2008-11-20 |
US20090206352A1 (en) | 2009-08-20 |
TW200703718A (en) | 2007-01-16 |
US8690629B2 (en) | 2014-04-08 |
DE112006000889A5 (de) | 2008-01-10 |
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