US20070157524A1 - Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer - Google Patents

Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer Download PDF

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Publication number
US20070157524A1
US20070157524A1 US11/547,034 US54703405A US2007157524A1 US 20070157524 A1 US20070157524 A1 US 20070157524A1 US 54703405 A US54703405 A US 54703405A US 2007157524 A1 US2007157524 A1 US 2007157524A1
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United States
Prior art keywords
chemical
mechanical polishing
dispersion
metal
aqueous dispersion
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Abandoned
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US11/547,034
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English (en)
Inventor
Wolfgang Lortz
Menzel Frank
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Evonik Operations GmbH
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Degussa GmbH
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Filing date
Publication date
Application filed by Degussa GmbH filed Critical Degussa GmbH
Publication of US20070157524A1 publication Critical patent/US20070157524A1/en
Assigned to DEGUSSA AG reassignment DEGUSSA AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MENZEL, FRANK, LORTZ, WOLFGANG
Assigned to DEGUSSA GMBH reassignment DEGUSSA GMBH CHANGE IN LEGAL FORM Assignors: DEGUSSA AG
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • the application concerns a dispersion for the chemical-mechanical polishing of metal surfaces.
  • a process for the production of semiconductors generally includes a chemical-mechanical polishing (CMP) step.
  • CMP chemical-mechanical polishing
  • Excess metal for example copper or tungsten, is removed in such a step.
  • the conductive metal is not directly to an insulating layer, which generally consists of silicon dioxide, because reactions can occur between these layers that are undesirable.
  • a barrier layer is applied between the metal and the silicon dioxide layer.
  • the barrier layer can consist for example of titanium nitride (TiN), titanium (Ti), tantalum (Ta), tantalum nitride (TaN) or combinations consisting thereof. It causes the metal layer to adhere to the silicon dioxide layer. In a subsequent polishing step it is then important that the abrasive in the form of a dispersion displays a high selectivity of metal to barrier layer.
  • dispersions for polishing metal surfaces generally contain abrasive particles in the form of metal oxides. Such dispersions can additionally also contain agents for pH adjustment, oxidising agents, corrosion inhibitors and surface-active substances.
  • a dispersion that displays good removal rates and good selectivity values may display only low stability, in terms of settling of the abrasive, for example.
  • the object of the invention is to provide a dispersion for the chemical-mechanical polishing of metal surfaces that displays a high removal rate for metals combined with good selectivity to a barrier layer and at the same time has good stability.
  • the invention provides an aqueous dispersion for the chemical-mechanical polishing of metal surfaces, containing a metal oxide powder and a cationic, surface-active polymer, characterised in that
  • the cationic, surface-active polymer in the dispersion according to the invention can preferably be one based on a diallyl ammonium compound.
  • Cationic, surface-active polymers having structures 3 and 4 can likewise be particularly preferred. They are copolymers starting from dialkyl diallyl compounds.
  • R1 and R2 here are a hydrogen atom, a methyl, an ethyl, an n-propyl, an isopropyl, an n-butyl, an isobutyl or a tert-butyl group, wherein R1 and R2 can be the same or different.
  • a hydrogen atom from the alkyl group can further be substituted by a hydroxyl group.
  • Y represents a free radical-polymerisable monomer unit, such as e.g. sulfonyl, acrylamide, methacrylamide, acrylic acid, methacrylic acid.
  • X ⁇ represents an anion.
  • the weight-average molecular weight of the cationic, surface-active polymer can preferably be 2000 to 50,000 g/mol.
  • the content of cationic, surface-active polymer can be between 0.1 and 15, particularly preferably between 0.5 and 10, and most particularly preferably between 0.8 and 5 wt. %, relative to the amount of cationic polymer and mixed oxide particles.
  • Particularly suitable cationic, surface-active polymers are obtainable under the name polyDADMAC.
  • metal oxide powders in the dispersion according to the invention can be powders obtained by precipitation, by sol-gel processes, hydrothermal processes, plasma processes, aerogel processes and by pyrogenic processes, such as flame hydrolysis and flame oxidation.
  • Metal oxide powders obtained from a flame hydrolysis process can preferably be present in the dispersion according to the invention, however.
  • Flame hydrolysis is understood to be the hydrolysis of metal compounds, generally metal chlorides, in the gas phase in a flame generated by the reaction of hydrogen and oxygen.
  • metal compounds generally metal chlorides
  • highly dispersed, non-porous primary particles are initially formed, which as the reaction continues coalesce to form aggregates which in turn can congregate to form agglomerates.
  • the BET surface area of these primary particles is between 5 and 600 m 2 /g. The surfaces of these particles can display acid or basic centres.
  • Metal oxides within the meaning of the invention are silicon dioxide, aluminium oxide or a mixed oxide of silicon dioxide and aluminium oxide.
  • Mixed oxide is understood to be the intimate mixture of the metal oxide components at an atomic level.
  • the powder particles here display Si—O—Al.
  • regions of silicon dioxide next to aluminium oxide can also be regions of silicon dioxide next to aluminium oxide.
  • the mixed oxide powders can be produced for example by means of a “co-fumed” process, wherein the precursors of silicon dioxide and aluminium oxide are mixed and then burned in a flame.
  • the mixed oxide powder described in DE-A-19847161 is also suitable.
  • Silicon dioxide powders partially coated with aluminium oxide or aluminium oxide powders partially coated with silicon dioxide are also suitable for the dispersion according to the invention. The production of these powders is described in US-A-2003/22081.
  • the mixed oxide powders of the dispersion according to the invention preferably have a content of aluminium oxide as mixed oxide component of a metal oxide powder of between 60 and 99.9 wt. % or between 0.01 and 10 wt. %.
  • the following mixed oxide powders are particularly suitable: silicon dioxide doped with 0.1 to 0.5 wt. % aluminium oxide and having a BET surface area of 50 to 70 m 2 /g, according to DE-A-19847161. Furthermore, silicon dioxide partially coated with Al 2 O 3 , having an aluminium oxide content of 3.5 to 7 wt. % and a BET surface area of 40 to 60 m 2 /g, according to US-A-2003/22081. Furthermore, a mixed oxide powder produced by a “co-fumed” process, having a content of aluminium oxide of 85 to 95 wt. % and a BET surface area of 85 to 110 m 2 /g. Furthermore, a mixed oxide powder produced by a “co-fumed” process, having a content of aluminium oxide of 60 to 70 wt. % and a BET surface area of 85 to 110 m 2 /g.
  • the optimum diameter of the particles or aggregates of the metal oxide powders present in the dispersion depends on the polishing task. In the specific case of the polishing of metal surfaces having an underlying barrier layer, it has proved to be advantageous if the average particle or aggregate diameter of the metal oxide powder in the dispersion is less than 300 nm. Values of less than 150 nm are particularly preferred. Depending on the origin of the metal oxide powder, it can be in the form of isolated, largely spherical particles or, as in the case of the preferred metal oxides produced by flame hydrolysis, in the form of aggregates. The particle or aggregate size can be determined by means of dynamic light scattering.
  • the content of metal oxide powder can be varied within broad limits. For instance, dispersions having a high content of metal oxide powder can be advantageous for transport, whilst significantly lower contents are used in the actual polishing process.
  • the content of metal oxide powder in the dispersion according to the invention can be 1 to 50 wt. %, relative to the total amount of dispersion. In polishing applications the content is generally between 1 and 10 wt. %.
  • the pH of the dispersion according to the invention can preferably be between 3 and 7, a range between 4 and 6 being particularly preferred.
  • the dispersion according to the invention can also contain additives from the group comprising oxidising agents, pH-adjusting substances, oxidation activators and/or corrosion inhibitors.
  • Suitable oxidising agents can be: hydrogen peroxide, a hydrogen peroxide adduct, such as e.g. the urea adduct, an organic per-acid, an inorganic per-acid, an imino per-acid, persulfates, perborate, percarbonate, oxidising metal salts or mixtures of the above. Hydrogen peroxide can particularly preferably be used.
  • the pH can be adjusted by means of acids or bases.
  • Inorganic acids, organic acids or mixtures of the aforementioned can be used as acids.
  • phosphoric acid phosphorous acid
  • nitric acid phosphorous acid
  • sulfuric acid mixtures thereof and their acid-reacting salts
  • inorganic acids phosphoric acid, phosphorous acid, nitric acid, sulfuric acid, mixtures thereof and their acid-reacting salts
  • the pH can be raised by the addition of ammonia, alkali hydroxides or amines.
  • Ammonia and potassium hydroxide are particularly preferred.
  • Suitable oxidation activators can be the metal salts of Ag, Co, Cr, Cu, Fe, No, Mn, Ni, Os, Pd, Ru, Sn, Ti, V and mixtures thereof. Carboxylic acids, nitrites, ureas, amides and esters are also suitable. Iron(II) nitrate can be particularly preferred.
  • concentration of the oxidation catalyst can be varied in a range between 0.001 and 2 wt. %, depending on the oxidising agent and the polishing task. The range between 0.01 and 0.05 wt. % can be particularly preferred.
  • Suitable corrosion inhibitors which can be present in the dispersion according to the invention in a proportion of 0.001 to 2 wt. %, comprise the group of nitrogen-containing heterocyclic compounds, such as benzotriazole, substituted benzimidazoles, substituted pyrazines, substituted pyrazoles, glycine and mixtures thereof.
  • the dispersion according to the invention can be produced by means of dispersing and/or grinding devices, which give rise to an energy input of at least 200 kJ/m 3 .
  • dispersing and/or grinding devices which give rise to an energy input of at least 200 kJ/m 3 .
  • These include systems based on the rotor-stator principle, for example Ultra-Turrax machines, or attrition mills. Higher energy inputs are possible with a planetary kneader/mixer.
  • the effectiveness of this system is dependent on an adequately high viscosity in the mixture to be processed, however, in order to incorporate the high shear energies needed to break down the particles.
  • dispersions can be obtained in which the particles or aggregates of the metal oxide powder display a size of less than 150 nm and particularly preferably of less than 100 nm.
  • two predispersed streams of suspension under high pressure are decompressed through a nozzle.
  • the two jets of dispersion hit each other exactly and the particles grind themselves.
  • the predispersion is likewise placed under high pressure, but the particles collide against armoured sections of wall. The operation can be repeated any number of times to obtain smaller particle sizes.
  • the dispersing and grinding devices can also be used in combination.
  • Oxidising agents and additives can be added at any point of the dispersing operation. It can also be advantageous not to incorporate the oxidising agents and oxidation activators until the end of the dispersing operation, for example, optionally with a lower energy input.
  • the invention also provides the use of the dispersion according to the invention for the chemical-mechanical polishing of metallic surfaces.
  • These can be layers consisting of copper, aluminium, tungsten, titanium, molybdenum, niobium, tantalum and alloys thereof.
  • the invention also provides the use of the dispersion according to the invention for the chemical-mechanical polishing of metallic surfaces that are applied to an insulating barrier layer.
  • the metal surfaces comprise the metals copper, aluminium, tungsten, titanium, molybdenum, niobium, tantalum and alloys thereof.
  • the barrier layers can consist of titanium nitride or tantalum nitride, for example.
  • Dispersions containing cationic, surface-active polymers have until now been used primarily in the paper industry for the stabilisation of dispersions (cf. EP-A-1331254). These are dispersions containing a solid which in the desired acid pH range displays little or no stability due to its negative surface charge. By the addition of cationic, surface-active substances such a dispersion can be stabilised in the acid to neutral pH range.
  • dispersion according to the invention gives rise to markedly better metal layer/barrier layer selectivity values than corresponding dispersions without the cationic, surface-active component.
  • the effect of this component has not yet been explained. It is surprising, however, that the positive effect also occurs in dispersions which inherently already display a positive surface charge in the acid range, such as an aluminium oxide dispersion, for example, or a dispersion of a silicon-aluminium mixed oxide powder having an aluminium oxide content of 90 wt. % or more.
  • a silicon-aluminium mixed oxide powder having a content of 66 wt. % Al 2 O 3 and a BET surface area of 90 m 2 /g is used in Example 1.
  • a silicon-aluminium mixed oxide powder having a content of 90 wt. % Al 2 O 3 and a BET surface area of 90 m 2 /g is used in Examples 2 and 3.
  • An abrasive body concentration of 12.5 wt. % is established by the addition of further demineralised water.
  • This “predispersion” is ground with a wet-jet mill, Ultimaizer system from Sugino Machine Ltd., model HJP-25050, under a pressure of 250 MPa and with a diamond nozzle diameter of 0.3 mm and two grinding cycles.
  • Example 2 is performed in the same way as Example 1.
  • Example 3 is also performed in the same way as Example 1, but without the cationising agent Catiofast®.
  • suitable polishing slurries for the Cu CMP process are produced by dilution to a powder content of 5 wt. %, addition of 1.3 wt. % of glycine as complexing agent and addition of 7.5 wt. % of hydrogen peroxide as oxidising agent.
  • the pH was adjusted to 4 with acetic acid.
  • the polishing results obtained with these slurries are shown in Table 1.
  • polishing results Removal Removal nm Cu/min nm TaN/min Selectivity Rq*
  • Example 60 kPa 60 kPa Cu:TaN 60 kPa 1 455 3 152 14 2 210 2 105 13 3 205 4 51 35 *Rq square mean roughness on Cu; the Rq value for the unpolished Cu wafer was 11 nm
  • the polishing results demonstrate the advantages of using a cationised mixed oxide slurry with regard to selectivity and Rq value.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
US11/547,034 2004-04-03 2005-03-16 Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer Abandoned US20070157524A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004016600A DE102004016600A1 (de) 2004-04-03 2004-04-03 Dispersion zum chemisch-mechanischen Polieren von Metalloberflächen enthaltend Metalloxidpartikel und ein kationisches Polymer
DE102004016600.5 2004-04-03
PCT/EP2005/002786 WO2005097930A2 (en) 2004-04-03 2005-03-16 Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer

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US (1) US20070157524A1 (zh)
EP (1) EP1732999B1 (zh)
JP (1) JP2007530749A (zh)
KR (1) KR100806995B1 (zh)
CN (1) CN1938393A (zh)
AT (1) ATE366784T1 (zh)
DE (2) DE102004016600A1 (zh)
TW (1) TWI297719B (zh)
WO (1) WO2005097930A2 (zh)

Cited By (8)

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US8048817B2 (en) 2006-12-22 2011-11-01 Denki Kagaku Kogyo Kabushiki Kaisha Amorphous silica powder, process for its production, and sealing material for semiconductors
US9159352B2 (en) 2010-12-16 2015-10-13 Kao Corporation Polishing liquid composition for magnetic disk substrate
US20160089763A1 (en) * 2014-03-11 2016-03-31 Cabot Microelectronics Corporation Composition for tungsten cmp
KR20170128063A (ko) * 2014-02-05 2017-11-22 캐보트 마이크로일렉트로닉스 코포레이션 질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법
US20190023944A1 (en) * 2016-03-01 2019-01-24 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
US20190057877A1 (en) * 2016-03-04 2019-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
US20190338163A1 (en) * 2018-05-03 2019-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten

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CN101177591B (zh) * 2007-12-07 2010-06-02 天长市华润清洗科技有限公司 金属抛光剂及其制备方法
JP5518523B2 (ja) * 2010-02-25 2014-06-11 富士フイルム株式会社 化学的機械的研磨液及び研磨方法
JP5979872B2 (ja) * 2011-01-31 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
DE102013208034A1 (de) 2012-05-23 2013-11-28 Evonik Industries Ag Verfahren zum chemisch-mechanischen Polieren mittels einer Siliciumdioxidpartikel und Kationisierungsmittel aufweisenden Dispersion
WO2013188296A1 (en) * 2012-06-11 2013-12-19 Cabot Microelectronics Corporation Composition and method for polishing molybdenum
JP6425954B2 (ja) * 2014-09-26 2018-11-21 太平洋セメント株式会社 研磨材
CN111710601A (zh) * 2015-02-06 2020-09-25 嘉柏微电子材料股份公司 用于抑制氮化钛及钛/氮化钛移除的化学机械抛光方法
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
CN106271898A (zh) * 2016-08-18 2017-01-04 广西华银铝业有限公司 一种石英片的清洁方法
WO2019006604A1 (zh) * 2017-07-03 2019-01-10 深圳市宏昌发科技有限公司 抛光剂、不锈钢件及其抛光处理方法
WO2019055749A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation COMPOSITION FOR THE CHEMICAL MECHANICAL POLISHING (CMP) OF TUNGSTEN
KR102114839B1 (ko) * 2018-06-08 2020-05-27 한국생산기술연구원 전자파 차폐 및 방열 복합시트를 위한 코어-쉘 구조의 금속수산화물 제조방법
US11712777B2 (en) * 2019-06-10 2023-08-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic fluoropolymer composite polishing pad
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8048817B2 (en) 2006-12-22 2011-11-01 Denki Kagaku Kogyo Kabushiki Kaisha Amorphous silica powder, process for its production, and sealing material for semiconductors
US9159352B2 (en) 2010-12-16 2015-10-13 Kao Corporation Polishing liquid composition for magnetic disk substrate
KR20170128063A (ko) * 2014-02-05 2017-11-22 캐보트 마이크로일렉트로닉스 코포레이션 질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법
KR102307254B1 (ko) 2014-02-05 2021-09-30 씨엠씨 머티리얼즈, 인코포레이티드 질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법
US20160089763A1 (en) * 2014-03-11 2016-03-31 Cabot Microelectronics Corporation Composition for tungsten cmp
US9566686B2 (en) * 2014-03-11 2017-02-14 Cabot Microelectronics Corporation Composition for tungsten CMP
US10557060B2 (en) * 2016-03-01 2020-02-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
US20190023944A1 (en) * 2016-03-01 2019-01-24 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
US20190057877A1 (en) * 2016-03-04 2019-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate
US10573524B2 (en) * 2016-03-04 2020-02-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
US20190338163A1 (en) * 2018-05-03 2019-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10815392B2 (en) * 2018-05-03 2020-10-27 Rohm and Haas Electronic CMP Holdings, Inc. Chemical mechanical polishing method for tungsten

Also Published As

Publication number Publication date
EP1732999A2 (en) 2006-12-20
ATE366784T1 (de) 2007-08-15
JP2007530749A (ja) 2007-11-01
KR20060135010A (ko) 2006-12-28
KR100806995B1 (ko) 2008-02-25
CN1938393A (zh) 2007-03-28
DE602005001622T2 (de) 2008-08-14
EP1732999B1 (en) 2007-07-11
WO2005097930A2 (en) 2005-10-20
DE602005001622D1 (de) 2007-08-23
DE102004016600A1 (de) 2005-10-27
WO2005097930A3 (en) 2006-01-12
TWI297719B (en) 2008-06-11
TW200536910A (en) 2005-11-16

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