JP2007530749A - 金属酸化物粒子およびカチオンポリマーを含有する金属表面の化学的機械研磨のための分散液 - Google Patents
金属酸化物粒子およびカチオンポリマーを含有する金属表面の化学的機械研磨のための分散液 Download PDFInfo
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- JP2007530749A JP2007530749A JP2007505424A JP2007505424A JP2007530749A JP 2007530749 A JP2007530749 A JP 2007530749A JP 2007505424 A JP2007505424 A JP 2007505424A JP 2007505424 A JP2007505424 A JP 2007505424A JP 2007530749 A JP2007530749 A JP 2007530749A
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- 239000006185 dispersion Substances 0.000 title claims abstract description 67
- 238000005498 polishing Methods 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 33
- 239000002184 metal Substances 0.000 title claims abstract description 33
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 28
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 28
- 239000000126 substance Substances 0.000 title claims description 23
- 239000002245 particle Substances 0.000 title claims description 15
- 229920006317 cationic polymer Polymers 0.000 title description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000843 powder Substances 0.000 claims abstract description 34
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 16
- 125000002091 cationic group Chemical group 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 229920000083 poly(allylamine) Polymers 0.000 claims abstract description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 18
- 239000007800 oxidant agent Substances 0.000 claims description 9
- 230000007062 hydrolysis Effects 0.000 claims description 6
- 238000006460 hydrolysis reaction Methods 0.000 claims description 6
- 239000012190 activator Substances 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 239000003112 inhibitor Substances 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- 230000001698 pyrogenic effect Effects 0.000 claims 1
- 150000001412 amines Chemical class 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 6
- 238000000034 method Methods 0.000 description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- 239000003093 cationic surfactant Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- -1 diallylamine compound Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 150000003672 ureas Chemical class 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910002800 Si–O–Al Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 150000001556 benzimidazoles Chemical class 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002333 glycines Chemical class 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000004966 inorganic peroxy acids Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000004967 organic peroxy acids Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000007154 radical cyclization reaction Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
金属酸化物粉末が二酸化珪素、酸化アルミニウムまたは二酸化珪素と酸化アルミニウムとの混合酸化物であり、かつ、
カチオン表面活性ポリマーが、分散液中に溶解され、かつ100,000g/モル未満の質量平均分子量を有するポリアリルアミンまたはポリジアリルアミンである、
ことを特徴とする。
66質量%のAl2O3含量および90m2/gのBET表面積を有する珪素−アルミニウム混合酸化物粉末を、例1で使用した。
研磨装置:MECAPOL E460(STEAG)、46cmプレートおよび6〃ウエハ担体、
研磨パット:IC1400(RPDEL Corp):それぞれの研磨されたウエハ後のダイアモンドセグメントで調整されたパッド、
スラリーの質:すべての試験において120ml/分、
研磨パラメータ:pA操作圧:10〜125kPa=1.45〜18.13psi、
デフォルト45および60kPa
pRリアプレッシャー10kPa
ωp=ωc=40rpm(すべての試験に関して一定)
スリープ=4cm(すべての試験に関して一定)
研磨時間:2分後洗浄:
後洗浄:研磨後、ウエハを30秒に亘って脱イオン水でリンスし、その後に両面を、精錬ユニット中で、スプレージェットおよびメガソニック(megasonic)担体を用いて清浄化し、かつ遠心乾燥器中で乾燥させた。
Claims (12)
- 金属酸化物粉末およびカチオン表面活性ポリマーを含有する、金属表面の化学的機械研磨のための水性分散液において、金属酸化物粉末が、二酸化珪素、酸化アルミニウムまたは二酸化珪素と酸化アルミニウムとの混合酸化物であり、かつ、カチオン表面活性ポリマーが、分散液中に溶解され、かつ100,000g/モル未満の質量平均分子量を有するポリアリルアミンまたはポリジアリルアミンであることを特徴とする、金属表面の化学的機械研磨のための水性分散液。
- カチオン表面活性ポリマーの質量平均分子量が2,000〜50,000g/モルである、請求項1に記載の金属表面の化学的機械研磨のための水性分散液。
- カチオン表面活性ポリマーの含量が、ポリマーおよび金属酸化物の全量に対して0.1〜15質量%である、請求項1または2に記載の金属表面の化学的機械研磨のための水性分散液。
- 金属酸化物粉末を、火炎加水分解によって製造する、請求項1から3までのいずれか1項に記載の金属表面の化学的機械研磨のための水性分散液。
- 金属酸化物粉末が、熱分解法二酸化珪素である、請求項1から4までのいずれか1項に記載の金属表面の化学的機械研磨のための水性分散液。
- 金属酸化物粉末の混合酸化物成分としての酸化アルミニウムの含量が、60〜99.9質量%または0.01〜10質量%である、請求項1から5までのいずれか1項に記載の金属表面の化学的機械研磨のための水性分散液。
- 分散液中の金属酸化物粉末の平均粒径または凝集体粒径が、300nm未満である、請求項1から6までのいずれか1項に記載の金属表面の化学的機械研磨のための水性分散液。
- 分散液中の金属酸化物の含量が、分散液の全量に対して1〜50質量%である、請求項1から7までのいずれか1項に記載の金属表面の化学的機械研磨のための水性分散液。
- pHが3〜7である、請求項1から8までのいずれか1項に記載の金属表面の化学的機械研磨のための水性分散液。
- pH調整物質、酸化剤、酸化活性剤および/または腐食防止剤を含む群からの添加剤を含有する、請求項1から9までのいずれか1項に記載の、金属表面の化学的機械研磨のための水性分散液。
- 金属層の化学的機械研磨のための、請求項1から10までのいずれか1項に記載の、水性分散液の使用。
- 絶縁バリア層に塗布された金属層の化学的機械研磨のための、請求項1から10までのいずれか1項に記載の水性分散液の使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102004016600A DE102004016600A1 (de) | 2004-04-03 | 2004-04-03 | Dispersion zum chemisch-mechanischen Polieren von Metalloberflächen enthaltend Metalloxidpartikel und ein kationisches Polymer |
PCT/EP2005/002786 WO2005097930A2 (en) | 2004-04-03 | 2005-03-16 | Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer |
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JP2007530749A true JP2007530749A (ja) | 2007-11-01 |
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JP2007505424A Pending JP2007530749A (ja) | 2004-04-03 | 2005-03-16 | 金属酸化物粒子およびカチオンポリマーを含有する金属表面の化学的機械研磨のための分散液 |
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US (1) | US20070157524A1 (ja) |
EP (1) | EP1732999B1 (ja) |
JP (1) | JP2007530749A (ja) |
KR (1) | KR100806995B1 (ja) |
CN (1) | CN1938393A (ja) |
AT (1) | ATE366784T1 (ja) |
DE (2) | DE102004016600A1 (ja) |
TW (1) | TWI297719B (ja) |
WO (1) | WO2005097930A2 (ja) |
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JP2011176208A (ja) * | 2010-02-25 | 2011-09-08 | Fujifilm Corp | 化学的機械的研磨液及び研磨方法 |
JP2015525483A (ja) * | 2012-06-11 | 2015-09-03 | キャボット マイクロエレクトロニクス コーポレイション | モリブデン研磨のための組成物および方法 |
JP2016065187A (ja) * | 2014-09-26 | 2016-04-28 | 太平洋セメント株式会社 | 研磨材 |
JP2017510977A (ja) * | 2014-02-05 | 2017-04-13 | キャボット マイクロエレクトロニクス コーポレイション | 窒化チタン及びチタン/窒化チタン除去の抑制に関するcmp方法 |
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CN101563291B (zh) * | 2006-12-22 | 2011-06-22 | 电气化学工业株式会社 | 无定形二氧化硅粉末、其制造方法及半导体密封材料 |
CN101177591B (zh) * | 2007-12-07 | 2010-06-02 | 天长市华润清洗科技有限公司 | 金属抛光剂及其制备方法 |
JP5925454B2 (ja) * | 2010-12-16 | 2016-05-25 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
JP5979872B2 (ja) * | 2011-01-31 | 2016-08-31 | 花王株式会社 | 磁気ディスク基板の製造方法 |
DE102013208034A1 (de) | 2012-05-23 | 2013-11-28 | Evonik Industries Ag | Verfahren zum chemisch-mechanischen Polieren mittels einer Siliciumdioxidpartikel und Kationisierungsmittel aufweisenden Dispersion |
US9238754B2 (en) * | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
CN111710601A (zh) * | 2015-02-06 | 2020-09-25 | 嘉柏微电子材料股份公司 | 用于抑制氮化钛及钛/氮化钛移除的化学机械抛光方法 |
US9631122B1 (en) * | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
JP6663033B2 (ja) * | 2016-03-01 | 2020-03-11 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 基板を化学機械研磨する方法 |
KR102586372B1 (ko) * | 2016-03-04 | 2023-10-06 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | 반도체 기판을 화학 기계적 연마하는 방법 |
CN106271898A (zh) * | 2016-08-18 | 2017-01-04 | 广西华银铝业有限公司 | 一种石英片的清洁方法 |
WO2019006604A1 (zh) * | 2017-07-03 | 2019-01-10 | 深圳市宏昌发科技有限公司 | 抛光剂、不锈钢件及其抛光处理方法 |
WO2019055749A1 (en) * | 2017-09-15 | 2019-03-21 | Cabot Microelectronics Corporation | COMPOSITION FOR THE CHEMICAL MECHANICAL POLISHING (CMP) OF TUNGSTEN |
US20190085205A1 (en) * | 2017-09-15 | 2019-03-21 | Cabot Microelectronics Corporation | NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS |
US10815392B2 (en) * | 2018-05-03 | 2020-10-27 | Rohm and Haas Electronic CMP Holdings, Inc. | Chemical mechanical polishing method for tungsten |
KR102114839B1 (ko) * | 2018-06-08 | 2020-05-27 | 한국생산기술연구원 | 전자파 차폐 및 방열 복합시트를 위한 코어-쉘 구조의 금속수산화물 제조방법 |
US11712777B2 (en) * | 2019-06-10 | 2023-08-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic fluoropolymer composite polishing pad |
CN112920716A (zh) * | 2021-01-26 | 2021-06-08 | 中国科学院上海微系统与信息技术研究所 | 一种用于氮化钛化学机械抛光的组合物及其使用方法 |
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DE4406624A1 (de) * | 1994-03-01 | 1995-09-07 | Roehm Gmbh | Vernetzte wasserlösliche Polymerdispersionen |
EP1234800A1 (de) * | 2001-02-22 | 2002-08-28 | Degussa Aktiengesellschaft | Wässrige Dispersion, Verfahren zu ihrer Herstellung und Verwendung |
US6589100B2 (en) * | 2001-09-24 | 2003-07-08 | Cabot Microelectronics Corporation | Rare earth salt/oxidizer-based CMP method |
DE10205280C1 (de) * | 2002-02-07 | 2003-07-03 | Degussa | Dispersion zum chemisch-mechanischen Polieren |
US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
DE10320854A1 (de) * | 2003-05-09 | 2004-12-09 | Degussa Ag | Dispersion zum chemisch-mechanischen Polieren |
-
2004
- 2004-04-03 DE DE102004016600A patent/DE102004016600A1/de not_active Withdrawn
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2005
- 2005-03-16 DE DE602005001622T patent/DE602005001622T2/de active Active
- 2005-03-16 KR KR1020067020367A patent/KR100806995B1/ko active IP Right Grant
- 2005-03-16 WO PCT/EP2005/002786 patent/WO2005097930A2/en active IP Right Grant
- 2005-03-16 US US11/547,034 patent/US20070157524A1/en not_active Abandoned
- 2005-03-16 AT AT05716106T patent/ATE366784T1/de not_active IP Right Cessation
- 2005-03-16 EP EP05716106A patent/EP1732999B1/en active Active
- 2005-03-16 CN CNA2005800107031A patent/CN1938393A/zh active Pending
- 2005-03-16 JP JP2007505424A patent/JP2007530749A/ja active Pending
- 2005-03-30 TW TW094110057A patent/TWI297719B/zh active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011176208A (ja) * | 2010-02-25 | 2011-09-08 | Fujifilm Corp | 化学的機械的研磨液及び研磨方法 |
JP2015525483A (ja) * | 2012-06-11 | 2015-09-03 | キャボット マイクロエレクトロニクス コーポレイション | モリブデン研磨のための組成物および方法 |
JP2017510977A (ja) * | 2014-02-05 | 2017-04-13 | キャボット マイクロエレクトロニクス コーポレイション | 窒化チタン及びチタン/窒化チタン除去の抑制に関するcmp方法 |
JP2016065187A (ja) * | 2014-09-26 | 2016-04-28 | 太平洋セメント株式会社 | 研磨材 |
Also Published As
Publication number | Publication date |
---|---|
WO2005097930A3 (en) | 2006-01-12 |
KR20060135010A (ko) | 2006-12-28 |
US20070157524A1 (en) | 2007-07-12 |
EP1732999B1 (en) | 2007-07-11 |
DE602005001622D1 (de) | 2007-08-23 |
TW200536910A (en) | 2005-11-16 |
KR100806995B1 (ko) | 2008-02-25 |
DE602005001622T2 (de) | 2008-08-14 |
WO2005097930A2 (en) | 2005-10-20 |
ATE366784T1 (de) | 2007-08-15 |
EP1732999A2 (en) | 2006-12-20 |
DE102004016600A1 (de) | 2005-10-27 |
TWI297719B (en) | 2008-06-11 |
CN1938393A (zh) | 2007-03-28 |
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