US20070062644A1 - Supporting plate, apparatus, and method for stripping supporting plate - Google Patents

Supporting plate, apparatus, and method for stripping supporting plate Download PDF

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Publication number
US20070062644A1
US20070062644A1 US11/512,566 US51256606A US2007062644A1 US 20070062644 A1 US20070062644 A1 US 20070062644A1 US 51256606 A US51256606 A US 51256606A US 2007062644 A1 US2007062644 A1 US 2007062644A1
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US
United States
Prior art keywords
supporting plate
penetrating hole
hole
solvent
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/512,566
Other languages
English (en)
Inventor
Akihiko Nakamura
Atsushi Miyanari
Yoshihiro Inao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Assigned to TOKYO OHKA KOGYO CO., LTD. reassignment TOKYO OHKA KOGYO CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INAO, YOSHIHIRO, MIYANARI, ATSUSHI, NAKAMURA, AKIHIKO
Publication of US20070062644A1 publication Critical patent/US20070062644A1/en
Priority to US13/036,761 priority Critical patent/US8080123B2/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
    • B29C63/0004—Component parts, details or accessories; Auxiliary operations
    • B29C63/0013—Removing old coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
    • B29L2031/3425—Printed circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y10T156/1132—Using vacuum directly against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means

Definitions

  • the present invention relates to a supporting plate which is used when a substrate such as a semiconductor wafer is thinned, and also relates to an apparatus and a method for stripping the supporting plate from the semiconductor wafer.
  • FIG. 8 An example of a conventional method for thinning a semiconductor wafer is shown in FIG. 8 .
  • a protecting tape is attached to a surface (A-surface) of a semiconductor wafer on which a circuit (element) has been formed.
  • the wafer is turned over, and the rear surface (B-surface) of the semiconductor wafer is ground by a grinder to make the wafer thinner.
  • the B surface of the semiconductor wafer which has been thinned is fixed onto a dicing tape retained by a dicing frame, and the protecting tape covering the surface (A-surface) of the semiconductor wafer on which a circuit (element) has been formed is stripped in this state.
  • the wafer is cut into each chip by a dicing device.
  • Document 2 has disclosed that a protecting base obtained by immersing a ladder-type silicone oligomer in an aluminum nitride—boron nitride porous sintered material is used instead of a protecting tape, and the protecting base and a semiconductor wafer are bonded by using a thermoplastic film. Document 2 also mentions that they are immersed in pure water at 80° C. for 3 hours before stripping.
  • a protecting base is made of a material having the same thermal expansion coefficient as a semiconductor wafer such as alumina, aluminum nitride, boron nitride, or silicon carbide.
  • Document 3 has proposed a method in which the protecting base and the semiconductor wafer are bonded by using a thermoplastic resin such as polyimide, the semiconductor wafer is thinned by a grinder, and thereafter stripping is performed by immersing in water, amine, or a mixed solution of water and amine, or by using steam.
  • a thermoplastic resin such as polyimide
  • thermoplastic film bonding the support plate (protecting tape) and the semiconductor wafer often fails to completely dissolve, and tends to be left in a state of sticking to either the support plate or the semiconductor wafer.
  • FIG. 9 explains a method for stripping this supporting plate.
  • a solvent supplying plate 102 is laid onto the upper surface of a supporting plate 100 via an O-ring 101 .
  • a solvent is supplied from a solvent supplying pipe 103 to a space S surrounded by the supporting plate 100 , the O-ring 101 and the solvent supplying plate 102 .
  • the solvent passes through penetrating holes 104 formed in the supporting plate 100 , dissolves and removes an adhesive layer 105 .
  • the solvent leaks from the periphery of the supporting plate to the outside, and the solvent drops onto the dicing tape, which results in a deterioration of the dicing tape in a short period of time.
  • the object of the present invention is to provide a supporting plate which makes it possible to easily strip the supporting plate from a substrate in a short period of time after thinning the substrate, and an apparatus and a method for stripping the supporting plate.
  • a supporting plate to which a circuit-formed surface of a substrate is bonded with an adhesive, wherein a first penetrating hole is formed in a substantially central portion of the supporting plate in the thickness direction, grooves connecting with the first penetrating hole are formed on a surface of the supporting plate to be contacted with an adhesive, and a second penetrating hole connecting with the grooves is formed in a peripheral portion of the supporting plate in the thickness direction.
  • the supporting plate of the present invention has a first penetrating hole formed in a substantially central portion of the supporting plate in the thickness direction, grooves formed on a surface of the supporting plate to be contacted with an adhesive so as to connect with the first penetrating hole, and a second penetrating hole formed in a peripheral portion of the supporting plate in the thickness direction so as to connect with the grooves, it is possible to use the first penetrating hole as a hole for supplying a solvent and the second penetrating hole as a hole for draining the solvent. With this, when the supporting plate is stripped from the substrate after the substrate is thinned, it is possible to supply the solvent quickly to the whole surface of the adhesive which bonds the substrate and the supporting plate so as to strip the supporting plate in a short period of time.
  • the second penetrating hole is used as a hole for supplying a solvent and the first penetrating hole is used as a hole for draining the solvent, the same effect can be achieved.
  • an apparatus for stripping a supporting plate bonded to a circuit-formed surface of a substrate with an adhesive comprising a plate which has a first penetrating hole formed in a substantially central portion of the plate in the thickness direction, a second penetrating hole formed in a peripheral portion of the plate in the thickness direction, and a hole for attracting a supporting plate formed between the first penetrating hole and the second penetrating hole in the radial direction.
  • the stripping apparatus of the present invention comprises a plate which has a first penetrating hole formed in a substantially central portion of the plate in the thickness direction, a second penetrating hole formed in a peripheral portion of the plate in the thickness direction, and a hole for attracting a supporting plate formed between the first penetrating hole and the second penetrating hole in the radial direction, it is possible to use the first penetrating hole as a hole for supplying a solvent and the second penetrating hole as a hole for draining the solvent. With this, when the supporting plate is stripped from the substrate after the substrate is thinned, it is possible to supply the solvent quickly to the whole surface of the adhesive which bonds the substrate and the supporting plate so as to strip the supporting plate in a short period of time.
  • the second penetrating hole is used as a hole for supplying a solvent and the first penetrating hole is used as a hole for draining the solvent, the same effect can be achieved.
  • a method for stripping a supporting plate bonded to a circuit-formed surface of a substrate with an adhesive comprising the steps of supplying a solvent from outside to a first penetrating hole of a plate, distributing the solvent from a first penetrating hole of a supporting plate to grooves connecting with the first penetrating hole of the supporting plate, dissolving the adhesive on a surface contacted with the substrate by the solvent, and draining the solvent used for dissolving the adhesive from a second penetrating hole of the supporting plate and a second penetrating hole of the plate.
  • the stripping method of the present invention comprises the steps of supplying a solvent from outside to a first penetrating hole of a plate, distributing the solvent from a first penetrating hole of a supporting plate to grooves connecting with the first penetrating hole of the supporting plate, dissolving the adhesive on a surface contacted with the substrate by the solvent, and draining the solvent used for dissolving the adhesive from a second penetrating hole of the supporting plate and a second penetrating hole of the plate, it is possible to supply the solvent quickly to the whole surface of the adhesive which bonds the substrate and the supporting plate so as to strip the supporting plate in a short period of time.
  • a method for stripping a supporting plate bonded to a circuit-formed surface of a substrate with an adhesive comprising the steps of supplying a solvent from outside to a second penetrating hole of a plate, distributing the solvent from a second penetrating hole of a supporting plate to grooves connecting with the second penetrating hole of the supporting plate, dissolving the adhesive on a surface contacted with the substrate by the solvent, and draining the solvent used for dissolving the adhesive from a first penetrating hole of the supporting plate and a first penetrating hole of the plate.
  • the stripping method of the present invention comprises the steps of supplying a solvent from outside to a second penetrating hole of a plate, distributing the solvent from a second penetrating hole of a supporting plate to grooves connecting with the second penetrating hole of the supporting plate, dissolving the adhesive on a surface contacted with the substrate by the solvent, and draining the solvent used for dissolving the adhesive from a first penetrating hole of the supporting plate and a first penetrating hole of the plate, it is possible to supply the solvent quickly to the whole surface of the adhesive which bonds the substrate and the supporting plate so as to strip the supporting plate in a short period of time.
  • FIG. 1 is a schematic view showing an embodiment of a supporting plate according to the present invention
  • FIG. 2 shows the process for forming a supporting plate
  • FIG. 3 is an enlarged view explaining staggered grooves
  • FIG. 4 is an enlarged view explaining honeycomb-shaped grooves
  • FIG. 5 is a schematic view showing an embodiment of an apparatus for stripping a supporting plate
  • FIG. 6 is a perspective view of FIG. 5 ;
  • FIG. 7 is a view showing another embodiment of the apparatus for stripping a supporting plate
  • FIG. 8 is a view explaining a conventional method for stripping a supporting plate
  • FIG. 9 is a view explaining the conventional method for stripping a supporting plate.
  • FIG. 10 is a view explaining a drawback of the conventional art for stripping a supporting plate.
  • FIG. 1 is a schematic view showing an embodiment of a supporting plate according to the present invention
  • FIG. 2 shows the process for forming a supporting plate.
  • a supporting plate 1 according to the present invention shown in FIG. 1 is made of a glass plate, a ceramic plate or a metal plate.
  • a circuit-formed surface of a semiconductor wafer W is bonded to one of the surfaces of the supporting plate 1 by using an adhesive, which is not shown in the drawing.
  • the supporting plate 1 has a unique structure as described below.
  • a first penetrating hole 2 is formed in a substantially central portion (center) of the supporting plate 1 so as to penetrate in the thickness direction.
  • a plurality of first penetrating holes 2 may be formed, and for example, four penetrating holes 2 are formed in FIG. 1 .
  • the number of the penetrating holes 2 is not limited to this.
  • grooves 3 connecting with the first penetrating hole 2 are formed on the surface of the supporting plate to which a semiconductor wafer W is bonded.
  • the grooves 3 are formed so as to cover almost all the surface up to the outer periphery.
  • the grooves 3 have a depth of 0.3 mm in a case where the supporting plate 1 has a thickness of 0.7 mm.
  • the depth of the grooves 3 needs to be sufficient so as not to be filled with an adhesive layer interposed between the supporting plate 1 and the semiconductor wafer W for bonding. With this, a small gap is defined between the adhesive layer and the grooves 3 , so that a solvent can quickly flow along the gap when the solvent is supplied as described below.
  • a second penetrating hole 4 is formed in a peripheral portion of the supporting plate 1 .
  • the second penetrating hole 4 penetrates in the thickness direction and connects with the grooves 3 so as to drain a solvent to outside (for withdrawal). It is possible to provide a plurality of penetrating holes 4 in a peripheral portion of the supporting plate 1 .
  • the first penetrating hole 2 to supply a solvent from outside and the second penetrating hole 4 to discharge a solvent to outside are connected to each other via the grooves 3 .
  • the grooves 3 are formed in a grid pattern, part of which is shown in the enlarged view of FIG. 1 .
  • the grooves 3 serve to connect the first penetrating hole 2 and the second penetrating hole 4 as mentioned above. Therefore, if a solvent is supplied from outside to the first penetrating hole 2 , the solvent flows from the central portion to the periphery (outer periphery) portion along the grooves 3 , and reaches the second penetrating hole 4 .
  • a glass plate is prepared, and a dry film resist is applied to a surface of the plate where the grooves 3 are to be formed (Step 1 ).
  • An exposure step and a development step are performed to the dry film resist by using a grid-patterned photo mask (See Steps 2 and 3 ).
  • the grid-patterned dry film resist (a resist mask for forming the grooves 3 ) is formed on the surface of the glass plate.
  • a protection step is performed to the periphery, and thereafter, cutting of the glass plate is performed by a sandblasting method with the grid-patterned dry film resist as a mask (See Steps 4 and 5 ).
  • the grid-patterned grooves 3 are formed on the surface of the glass plate, which have a predetermined depth from the surface.
  • An exposure step and a development step are performed to the dry film resist by using a photo mask for forming the first penetrating hole 2 and the second penetrating hole 4 (See Steps 7 and 8 ).
  • the dry film resist corresponding to the first penetrating hole 2 and the second penetrating hole 4 (a resist mask for forming the first penetrating hole 2 and the second penetrating hole 4 ) is formed on the other surface of the glass plate.
  • Step 9 a protection step is performed to the periphery
  • Step 10 cutting of the glass plate is performed by a sandblasting method with the resist mask for forming the first penetrating hole 2 and the second penetrating hole 4
  • Step 11 cleaning is performed to the glass plate (Step 11 ).
  • the first penetrating hole 2 is formed in the central portion of the glass plate, which penetrates in the thickness direction.
  • the second penetrating hole 4 is formed in the periphery portion, which penetrates in the thickness direction.
  • the grooves 3 are formed first, and the first penetrating hole 2 and the second penetrating hole 4 are formed next. However, this order may be reversed.
  • a dry etching method or a wet etching method may be used to form grid-patterned grooves instead of a sandblasting method.
  • etching methods it is difficult to form uniform grooves compared to a sandblasting method although it depends on the width or the depth of the grooves.
  • a sandblasting method is preferred to form the grooves 3 .
  • the penetrating hole 2 for supplying a solvent from outside is formed in the central portion of the supporting plate 1 in the thickness direction
  • the grid-patterned grooves connecting with the first penetrating hole 2 are formed on a surface of the supporting plate to be contacted with an adhesive
  • the second penetrating hole 4 for draining a solvent to outside connecting with the grooves 3 is formed in the peripheral portion of the supporting plate 1 in the thickness direction.
  • the supporting plate 1 is stripped from the semiconductor wafer W by using the stripping apparatus and a stripping method described below, it is possible to supply a solvent quickly to the whole surface of the adhesive which bonds the wafer W and the supporting plate 1 so as to strip the supporting plate 1 in a short period of time compared to the case of using a conventional supporting plate.
  • a conventional supporting plate has a structure in which a number of penetrating holes are formed in the thickness direction, dissolution of the adhesive starts in the area where the adhesive contacts with the penetrating holes. Therefore, it takes time to distribute the solvent over the adhesive uniformly.
  • the supporting plate 1 has a structure in which the grid-patterned grooves 3 are formed on almost all the surface to be contacted with the adhesive. Therefore, the solvent supplied from the first penetrating hole 2 flows toward the periphery portion via the grid-patterned grooves 3 connecting with the first penetrating hole 2 , so that the solvent can be distributed quickly over the adhesive.
  • the supporting plate 1 since a number of penetrating holes are not formed in the supporting plate 1 according to the present invention, unlike a conventional supporting plate, when the supporting plate 1 is stripped from the semiconductor wafer W 1 by using the stripping apparatus and method described below, it is possible to retain the area where no hole is formed by vacuum attraction. With this, it is possible to simplify the process for stripping the supporting plate 1 from the semiconductor wafer W.
  • the supporting plate 1 since a number of penetrating holes are not formed in the supporting plate 1 according to the present invention, unlike a conventional supporting plate, it is possible to improve the strength of the supporting plate 1 , and increase the reuse rate.
  • the shape of the grooves 3 is a grid in the above-mentioned embodiment of the supporting plate 1 .
  • the shape of the grooves 3 may be staggered (see the enlarged view of the grooves shown in FIG. 3 ( a ) and the enlarged view of the periphery shown in FIG. 3 ( b )).
  • the shape of the grooves 3 according to this embodiment is formed by staggering grid-patterned grooves 3 as shown in FIG. 1 in columns at a predetermined interval.
  • the staggered grooves 3 make it possible to supply the solvent quickly to the whole surface of the adhesive which bonds the wafer W and the supporting plate 1 in the same manner as the case of the grid-patterned grooves 3 . Consequently, it is possible to strip the supporting plate 1 from the substrate in a short period of time compared to the case of using a conventional supporting plate.
  • the staggered grooves 3 can be formed in the same process shown in FIG. 2 .
  • the shape of the grooves 3 is honeycombed according to this embodiment. More specifically, the shape of the grooves 3 is hexagonal (see the enlarged view of the grooves shown in FIG. 4 ( a ) and the enlarged view of the periphery shown in FIG. 4 ( b )).
  • the shape of the grooves 3 is hexagonal, it is possible to supply the solvent more quickly to the whole surface of the adhesive which bonds the wafer W and the supporting plate 1 compared to the cases of the grid-patterned grooves 3 and the staggered grooves 3 . Consequently, it is possible to strip the supporting plate 1 from the substrate in a shorter period of time compared to the case of using a conventional supporting plate.
  • the solvent supplied from the central portion can more easily reach the peripheral portion compared to the cases of the grid-patterned grooves 3 and the staggered grooves 3 , by arranging each of the adjacent hexagonal grooves 3 to be directed from the central portion to the peripheral portion.
  • the hexagonal grooves 3 can be formed in the same processes shown in FIG. 2 .
  • the shape of the grooves 3 it is also possible to employ a coil shape in which the grooves are directed from the hole for supplying a solvent in the center toward the hole for draining the solvent in the periphery.
  • the supporting plate may be comprised of frosted glass as follows:
  • the surface of the glass substrate to which the semiconductor wafer W is attached is roughened by 0.05 mm-0.1 mm, although this is not shown in the drawings. Since the other features are the same as described above, they are not explained again.
  • a solvent supplied from the first penetrating hole 2 can permeate the whole surface by capillary action. With this, it is possible to achieve the same function as the case of the supporting plate provided with the grooves 3 described above.
  • the supporting plate 1 is provided with the hexagonal grooves 3 shown in FIG. 4 , for example.
  • the stripping apparatus 20 comprises a plate 10 .
  • the plate 1 is supported by an elevator mechanism so as to be elevated or lowered in the vertical direction by a predetermined stroke.
  • a first penetrating hole 12 (for supplying a solvent from outside) is formed in the central portion of the plate 10 , and a second penetrating hole 14 (for draining a solvent to outside) is formed in the periphery portion of the plate 10 . Also, a hole 13 is formed between the first penetrating hole 12 and the second penetrating hole 14 in the radial direction. The hole 13 is used for vacuuming, and a recessed portion 15 is formed at the end of the hole 13 which is in contact with the supporting plate 1 .
  • the first penetrating hole 12 is connected to a solvent supplying means, for example, by a tube which is not shown in the drawings.
  • the hole for supplying a solvent 12 is coupled to the first penetrating hole 2 of the supporting plate 1 and the hole for draining a solvent 14 is coupled to the second penetrating hole 4 of the supporting plate 1 .
  • the hole 13 is positioned in an area of the supporting plate 1 where the first penetrating hole 2 and the second penetrating hole 4 are not formed.
  • the plate 10 is pushed onto the upper surface of the supporting plate 1 , so that the hole for supplying a solvent 12 of the plate 10 is aligned (coupled) to the first penetrating hole 2 of the supporting plate 1 , and the hole for draining a solvent 14 is aligned (coupled) to the second penetrating hole 4 of the supporting plate 1 (see FIG. 5 ).
  • a solvent is supplied to the hole for supplying a solvent 12 of the plate 10 by a solvent supplying means (not shown in the drawing) in this state.
  • the solvent flows toward the first penetrating hole 2 of the supporting plate 1 , and reaches the hexagonal grooves 3 which connect with the penetrating hole 2 .
  • the solvent can be distributed quickly over an adhesive layer 5 so as to dissolve the adhesive layer 5 .
  • the solvent used for dissolving the adhesive layer 5 flows to the second penetrating hole 4 formed in the periphery of the supporting plate 1 and connecting with the grooves 3 , reaches the hole for draining a solvent 14 of the plate 10 , and is drained to outside (and withdrawn).
  • the supporting plate 1 is stripped from the semiconductor wafer W.
  • the pressure inside the recessed portion 15 is reduced by the hole 13 for vacuuming, and the plate 10 is lifted up in the state where the supporting plate 1 is attracted to the plate 10 by vacuuming. In this way, the supporting plate 1 is stripped and the semiconductor wafer W is left to a dicing tape 7 .
  • the dicing tape 7 has adhesiveness and is retained by a frame 6 .
  • the solvent supplied to the hole for supplying a solvent 12 of the plate 10 flows toward the first penetrating hole 2 of the supporting plate 1 , and reaches the periphery of the supporting plate 1 via the hexagonal grooves 3 which connect with the penetrating hole 2 of the supporting plate 1 .
  • the solvent flows to the hole for draining a solvent 14 of the plate 10 via the second penetrating hole 4 formed in the periphery of the supporting plate 1 to be drained to outside.
  • the grooves 3 make it possible to supply the solvent quickly to the whole surface of the adhesive layer 5 . Consequently, it is possible to strip the supporting plate 1 in a shorter period of time compared to the case of using the conventional supporting plate.
  • an air supplying means may be provided in a stripping apparatus having the above-mentioned structure, and a tube of the air supplying means may be connected to a tube of the solvent supplying means which leads to the solvent supplying hole of the plate 10 .
  • a solvent is supplied to the central portion and drained from the periphery portion.
  • the second penetrating hole 4 formed in the periphery portion of the supporting plate 1 is used for supplying a solvent from outside
  • the first penetrating hole 2 formed in the central portion of the supporting plate 1 is used for draining the solvent to the outside.
  • the hole 14 formed in the periphery portion is used for supplying a solvent from outside, and the hole 12 formed in the central portion is used for draining the solvent to the outside.
  • the plate 10 is provided in the upper surface of the supporting plate 1 as shown in FIG. 5 .
  • the plate 10 may be provided in the lower surface of the supporting plate 1 as shown in FIG. 7 .
  • a solvent can be supplied to the whole surface of the adhesive which bonds the substrate and the supporting plate so as to strip the supporting plate in a short period of time and reduce the treatment time.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
US11/512,566 2005-08-31 2006-08-30 Supporting plate, apparatus, and method for stripping supporting plate Abandoned US20070062644A1 (en)

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US13/036,761 US8080123B2 (en) 2005-08-31 2011-02-28 Supporting plate, apparatus and method for stripping supporting plate

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JP2005-251200 2005-08-31
JP2005251200A JP4721828B2 (ja) 2005-08-31 2005-08-31 サポートプレートの剥離方法

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US13/036,761 Expired - Fee Related US8080123B2 (en) 2005-08-31 2011-02-28 Supporting plate, apparatus and method for stripping supporting plate

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JP (1) JP4721828B2 (ko)
KR (1) KR100759679B1 (ko)
TW (1) TWI336488B (ko)

Cited By (60)

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