US20060258174A1 - Substrate treatment apparatus and method of manufacturing semiconductor device - Google Patents

Substrate treatment apparatus and method of manufacturing semiconductor device Download PDF

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Publication number
US20060258174A1
US20060258174A1 US10/549,698 US54969804A US2006258174A1 US 20060258174 A1 US20060258174 A1 US 20060258174A1 US 54969804 A US54969804 A US 54969804A US 2006258174 A1 US2006258174 A1 US 2006258174A1
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Prior art keywords
substrate
gases
processing chamber
substrates
gas supply
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US10/549,698
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Inventor
Masanori Sakai
Toru Kagaya
Hirohisa Yamazaki
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
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Assigned to HITACHI KOKUSAI ELECTRIC INC. reassignment HITACHI KOKUSAI ELECTRIC INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YAMAZAKI, HIROHISA, KAGAYA, TORU, SAKAI, MASANORI
Publication of US20060258174A1 publication Critical patent/US20060258174A1/en
Priority to US12/414,128 priority Critical patent/US20090186467A1/en
Priority to US13/270,811 priority patent/US8598047B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

  • the present invention relates to a substrate processing apparatus and a producing method of a semiconductor device, and more particularly, to a semiconductor producing apparatus which forms a film by ALD (Atomic layer Deposition) method used when an Si semiconductor device is produced, and to a producing method of a semiconductor device by the ALD method.
  • ALD Atomic layer Deposition
  • the ALD method is a method in which two (or more) kinds of raw material gases used for forming a film are alternately supplied onto a substrate by one kind by one kind under certain film forming conditions (temperature, time and the like), the gases are allowed to be adsorbed by one atomic layer by one atomic layer, and a film is formed utilizing a surface reaction.
  • a high quality film can be formed at a low temperature as low as 250 to 450° C. by alternately supplying TMA (Al(CH 3 ) 3 , trimethyl aluminum) and O 3 (ozone) using the ALD method.
  • TMA Al(CH 3 ) 3 , trimethyl aluminum
  • O 3 ozone
  • a film is formed by supplying a plurality of reaction gases alternately one kind by one kind in this manner.
  • the thickness of the film is controlled by the number of cycles of the supply of the reaction gases. For example, when film forming speed is 1 ⁇ /cycle, in order to form a film of 20 ⁇ , 20 cycles of the film forming processing are carried out.
  • a conventional ALD apparatus which forms the Al 2 O 3 film is called a single wafer type apparatus in which the number of substrates to be processed in one processing furnace at a time is one to five, and an apparatus called a batch type apparatus in which 25 or more substrates are arranged in parallel to an axial direction of a reaction tube has not yet become commercially practical.
  • a substrate processing apparatus having a processing chamber which accommodates a substrate or substrates therein, and a heating member which heats said substrate or substrates, in which at least two gases which react with each other are alternately supplied into said processing chamber to form a desired film or films on a surface or surfaces of said substrate or substrates, characterized by comprising:
  • a single gas supply member which supplies said gases into said processing chamber and which has a portion extending to a region whose temperature is equal to or higher than a decomposition temperature of at least one of said two gases, wherein
  • said two supply tubes are connected to said gas supply member at a location whose temperature is lower than the decomposition temperature of said at least one gas, and said two gases are supplied into said processing chamber through said gas supply member.
  • a substrate processing apparatus comprising a hot wall type processing furnace which includes a processing chamber which accommodates a substrate or substrates therein and a heating member which is disposed outside of said processing chamber and which heats said substrate or substrates, wherein at least two gases which react with each other are alternately supplied into said processing chamber to produce a desired film or films on a surface or surfaces of said substrate or substrates, characterized by comprising:
  • a single gas supply member which supplies said gases into said processing chamber, and which has a portion disposed inside of said heating member, wherein said two supply tubes are connected to said gas supply member in a region whose temperature is lower than a temperature in said processing chamber in the vicinity of said substrate or substrates, and said two gases are supplied into said processing chamber through said gas supply member.
  • a substrate processing apparatus having a processing chamber, which accommodates a substrate or substrates therein, and a heating member which heats said substrate or substrates, in which at least two gases which react with each other are alternately supplied into said processing chamber to form a desired film or films on a surface or surfaces of said substrate or substrates, comprising:
  • a single gas supply member which supplies said gases into said processing chamber and which has a portion extending to a region whose temperature is equal to or higher than a decomposition temperature of at least one of said two gases, wherein
  • said two supply tubes are connected to said gas supply member at a location whose temperature is lower than the decomposition temperature of said at least one gas, and said two gases are supplied into said processing chamber through said gas supply member,
  • said two gases are alternately supplied into said processing chamber through said gas supply member to form said desired film or films on said surface or surfaces of said substrate or substrates.
  • FIG. 1 is a schematic longitudinal sectional view of a vertical substrate processing furnace of a substrate processing apparatus according to one embodiment of the present invention.
  • FIG. 2 is a schematic transversal sectional view of the vertical substrate processing furnace of the substrate processing apparatus according to the one embodiment of the present invention.
  • FIG. 3A is a schematic diagram for explaining a nozzle 233 of the vertical substrate processing furnace of the substrate processing apparatus according to the one embodiment of the present invention.
  • FIG. 3B is a partial enlarged diagram of a portion A in FIG. 3A .
  • FIG. 4 is a schematic perspective view for explaining the substrate processing apparatus according to the one embodiment of the present invention.
  • the processing apparatus includes a substrate holding jig capable of holding a plurality of substrates, a reaction tube in which the substrate holding jig is inserted and which processes the substrates, heating means which heats the substrates, an evacuator capable of exhausting gas in the reaction tube, and one gas nozzle from which gas is issued toward the substrates in parallel to surfaces thereof, TMA and O 3 gas supply lines connected to the nozzle are merge with each other in a reaction chamber, TMA and O 3 are alternately supplied onto the substrates, thereby forming aluminum oxide films (Al 2 O 3 films).
  • TMA is adsorbed on the substrate
  • O 3 gas which flows next reacts with the adsorbed TMA
  • Al 2 O 3 film of one atomic layer is produced.
  • the gas nozzle is provided with a nozzle hole from which gas is issued. Since the nozzle hole is small, the pressure in the nozzle becomes higher than the pressure in the furnace. When the pressure in the furnace is 0.5 Torr (about 67 Pa), it is expected that the pressure in the nozzle becomes 10 Torr (about 1330 Pa). Therefore, especially in a nozzle located in a high temperature region, the self decomposition of TMA is prone to take place. On the other hand, although the temperature in the furnace is high, the pressure in the furnace does not become as high as that in the nozzle and thus, the self decomposition of TMA is less prone to take place. Therefore, a problem of generation of Al film in the nozzle becomes serious.
  • ClF 3 gas is allowed to flow to carry out cleaning. If this cleaning gas is supplied from the nozzle, Al 2 O 3 film in the nozzle can also be removed at the same time, and the cleaning operation is facilitated and efficiency thereof is also be enhanced.
  • the present invention is suitably applied not only to a forming operation of Al 2 O 3 films but also to a forming operation of HfO 2 films. This is because that Hf raw material causes the same problem as that of TMA. In this case, In this case, O 3 gas and Hf raw material gas of vaporized tetrakis (N-ethyl-N-methyl amino) hafnium (liquid at normal temperature) are allowed to flow alternately to form HfO 2 film.
  • the present invention is also suitably applied to a forming operation of SiO 2 films using the following materials:
  • FIG. 1 is a schematic diagram showing a structure of a vertical substrate processing furnace according to an embodiment, and is a vertical sectional view of a processing furnace portion
  • FIG. 2 is a schematic diagram showing a structure of the vertical substrate processing furnace, and is a transverse sectional view of the processing furnace portion
  • FIG. 3A is a schematic diagram used for explaining a nozzle 233 of the vertical substrate processing furnace of a semiconductor producing apparatus of the embodiment
  • FIG. 3B is a partial enlarged diagram of a portion A in FIG. 3A .
  • a reaction tube 203 as a reaction container is provided inside of a heater 207 which is heating means.
  • the reaction tube 203 processes wafers 200 which are substrates.
  • a manifold 209 made of stainless steel for example is engaged with a lower end of the reaction tube 203 .
  • a lower end opening of the manifold 209 is air-tightly closed with a seal cap 219 which is a lid through an O-ring 220 which is a hermetic member.
  • At least the heater 207 , the reaction tube 203 , the manifold 209 and the seal cap 219 form a processing furnace 202 .
  • the manifold 209 is fixed to holding means (heater base 251 , hereinafter).
  • a lower end of the reaction tube 203 and an upper opening end of the manifold 209 are provided with annular flanges, respectively.
  • a hermetic member (O-ring 220 , hereinafter) is disposed between the flanges to air-tightly seal between them.
  • a boat 217 which is substrate holding means is vertically provided above the seal cap 219 through a quartz cap 218 .
  • the quartz cap 218 is a holding body which holds the boat 217 .
  • the boat 217 is inserted into a processing furnace 202 .
  • the plurality of wafers 200 to be batch-processed are multi-stacked on the boat 217 in their horizontal attitudes in an axial direction of the boat 217 .
  • the heater 207 heats the wafers 200 inserted into the processing furnace 202 to a predetermined temperature.
  • the processing furnace 202 is provided with two gas supply tubes 232 a and 232 b as supply tubes which supply a plurality of (two, in this embodiment) kinds of gases to the processing furnace 202 .
  • the gas supply tubes 232 a and 232 b penetrate a lower portion of the manifold 209 , merges with the gas supply tube 232 a in the processing furnace 202 , and the two gas supply tubes 232 a and 232 b are brought into communication with one porous nozzle 233 .
  • the nozzle 233 is provided in the processing furnace 202 , and its upper portion extends to a region whose temperature is equal to or higher than the decomposition temperature of TMA supplied from the gas supply tube 232 b.
  • reaction gas (O 3 ) is supplied from the first gas supply tube 232 a into the processing furnace 202 through a first mass flow controller 241 a which is flow rate control means, a first valve 243 a which is an open/close valve, and a later-described porous nozzle 233 disposed in the processing furnace 202 .
  • Reaction gas is supplied from the second gas supply tubes 232 b into the processing furnace 202 through a second mass flow controller 241 b which is flow rate control means, a second valve 252 which is an open/close valve, a TMA container 260 , a third valve 250 which is an open/close valve, and the porous nozzle 233 .
  • a heater 300 is provided in the gas supply tube 232 b at a location between the TMA container 260 and the manifold 209 , and the temperature of the gas supply tube 232 b is maintained at 50 to 60° C.
  • An inert gas line 232 c is connected to the gas supply tube 232 b downstream of the third valve 250 through an open/close valve 253 .
  • An inert gas line 232 d is connected to the gas supply tube 232 a downstream of the first valve 243 a through an open/close valve 254 .
  • the processing furnace 202 is connected to a vacuum pump 246 which is exhausting means through a fourth valve 243 d by a gas exhausting tube 231 which is an exhausting tube for exhausting gas so as to evacuate the processing furnace 202 .
  • the fourth valve 243 d is the open/close valve which can open and close the valve to evacuate the processing furnace 202 and to stop the evacuation, and can adjust the pressure by adjusting the valve opening.
  • the nozzle 233 is disposed such as to extend from a lower portion to an upper portion of the reaction tube 203 along the stacking direction of the wafers 200 .
  • the nozzle 233 is provided with gas supply holes 248 b through which a plurality of gases are supplied.
  • the boat 217 is provided at a central portion in the reaction tube 203 .
  • the plurality of wafers 200 are stacked on the boat 217 .
  • the wafers 200 are stacked at the same distances from one another.
  • the boat 217 can come into and out from the reaction tube 203 by a boat elevator mechanism (not shown).
  • a boat rotating mechanism 267 which is rotating means for rotating the boat 217 is provided. By rotating the boat rotating mechanism 267 , the boat 217 held by the quartz cap 218 is rotated.
  • a controller 121 which is control means controls the first and second mass flow controllers 241 a and 241 b, the first to fourth valves 243 a, 252 , 250 and 243 d, the valves 253 and 254 , the heater 207 , the vacuum pump 246 , the boat rotating mechanism 267 , and adjustment of flow rates of the first and second mass flow controllers 241 a and 241 b connected to the boat elevator mechanism (not shown), opening and closing operations of the first to third valves 243 a, 252 , 250 and valves 253 and 254 , opening and closing operations and adjustment of pressure of the fourth valve 243 d, adjustment of the temperature of the heater 207 , actuation and stop of the vacuum pump 246 , adjustment of rotation speed of the boat rotating mechanism 267 , and vertical movement of the boat elevator mechanism.
  • semiconductor silicon wafers 200 on which films are to be formed are loaded on the boat 217 , and the boat 217 is transferred into the processing furnace 202 . After the transfer, the following three steps are carried out in succession.
  • step 1 O 3 gas is allowed to flow.
  • the first valve 243 a provided in the first gas supply tube 232 a and the fourth valve 243 d provided in the gas exhausting tube 231 are opened, and gas is exhausted from the gas exhausting tube 231 while supplying O 3 gas whose flow rate is adjusted by the first valve 243 a from the first gas supply tube 232 a into the processing furnace 202 through the gas supply holes 248 b of the nozzle 233 and in this state.
  • the fourth valve 243 d is appropriately adjusted, and the pressure in the processing furnace 202 is set to 10 to 100 Pa.
  • a supply flow rate of O 3 controlled by the first mass flow controller 241 a is 1000 to 1000 sccm.
  • the wafers 200 are exposed to O 3 for 2 to 120 seconds.
  • the temperature of the heater 207 at that time is set such that the temperature of the wafers becomes 250 to 450° C.
  • the gas flowing into the processing furnace 202 is O 3 and only inert gas such as N 2 and Ar, and there exists no TMA. Therefore, O 3 does not cause the vapor-phase reaction, and surface-reacts with a ground film on the wafer 200 .
  • step 2 the first valve 243 a of the first gas supply tube 232 a is closed to stop the supply of O 3 .
  • the gas exhausting tube 231 fourth valve 243 d is held opened, the processing furnace 202 is evacuated by the vacuum pump 246 to a pressure equal to or lower than 20 Pa, and remaining O 3 is exhausted from the processing furnace 202 .
  • inert gas such as N 2 is supplied into the processing furnace 202 from the first gas supply tube 232 a which is an O 3 supply line and from the second gas supply tubes 232 b which is a TMA supply line, the evacuating effect of remaining O 3 is further enhanced.
  • TMA gas is allowed to flow.
  • TMA is liquid at the normal temperature.
  • inert gas such as nitrogen gas and rare gas is allowed to flow into the TMA container 260 , and evaporated TMA is supplied to the processing furnace together with the carrier gas.
  • carrier gas such as nitrogen gas and rare gas
  • valve 252 provided in a carrier gas supply tube 232 b, a valve 250 provided between the TMA container 260 and the processing furnace 202 and the fourth valve 243 d provided in the gas exhausting tube 231 are opened, carrier gas whose flow rate is adjusted by the second mass flow controller 241 b is allowed to flow through the TMA container 260 from the carrier gas supply tube 232 b, and mixture gas of TMA and carrier gas is supplied to the processing furnace 202 from the gas supply holes 248 b and in this state, gas is exhausted from the gas exhausting tube 231 .
  • the fourth valve 243 d is appropriately adjusted and the pressure in the processing furnace 202 is set to 10 to 900 Pa.
  • the supply flow rate of carrier gas controlled by the second mass flow controller 241 a is 10000 sccm or less.
  • the time during which TMA is supplied is set to 1 to 4 seconds.
  • the time during which wafers are exposed to higher pressure atmosphere to further adsorb may be set to 0 to 4 seconds.
  • the temperature of the wafer at that time is 250 to 450° C. like the case in which O 3 is supplied.
  • valve 250 is closed, the fourth valve 243 d is opened, the processing furnace 202 is evacuated, and remaining gas which contributed to the formation of TMA films is exhausted.
  • inert gas such as N 2 is supplied into the processing furnace 202 from the first gas supply tube 232 a which is the O 3 supply line and from the second gas supply tubes 232 b which is the TMA supply line, the exhausting effect of remaining gas after the gas contributed to the formation of TMA films from the processing furnace 202 is enhanced.
  • Al 2 O 3 films having predetermined thickness can be formed on the wafers 200 by repeating this cycle a plurality of times.
  • the processing furnace 202 is evacuated to remove O 3 gas and then, TMA is allowed to flow. Therefore, O 3 gas and TMA do not react with each other on the way to the wafers 200 .
  • the supplied TMA can effectively react only with O 3 which is adsorbed to the wafers 200 .
  • TMA and O 3 can be adsorbed and can react with each other alternately even in the nozzle 233 , thereby forming Al 2 O 3 deposition films, and it is possible to avoid such a problem that Al film that can be a foreign matter generation source in the TMA nozzle when TMA and 03 are supplied through independent nozzles.
  • the Al 2 O 3 film has more excellent adhesion as compared with Al film, and the Al 2 O 3 film is less prone to be peeled off and thus, Al 2 O 3 film is less prone to be the foreign matter generation source.
  • FIG. 4 an outline of the semiconductor producing apparatus which is one example of the semiconductor producing apparatus to which the present invention is preferably applied will be explained.
  • a cassette stage 105 as a holding tool delivery member which deliveries a cassette 100 as a substrate accommodating container between a casing 101 and an external transfer apparatus (not shown) is provided on a front surface side in the casing 101 .
  • a cassette elevator 115 as elevator means is provided on a rear side of the cassette stage 105 .
  • a cassette loader 114 as transfer means is mounted on the cassette elevator 115 .
  • a cassette shelf 109 as placing means of the cassette 100 is provided on the rear side of the cassette elevator 115 , and an auxiliary cassette shelf 110 is provided also above the cassette stage 105 .
  • a clean unit 118 is provided above the auxiliary cassette shelf 110 so that clean air can flow into the casing 101 .
  • the processing furnace 202 is provided above a rear portion of the casing 101 .
  • a boat elevator 121 as elevator means is provided below the processing furnace 202 .
  • the boat elevator 121 vertically moves the boat 217 as the substrate holding means to and from the processing furnace 202 .
  • the boat 217 holds the wafers 200 as substrates in the multi-stacked manner in their horizontal attitudes.
  • the seal cap 219 as a lid is mounted on a tip end of a vertically moving member 122 which is mounted on the boat elevator 121 , and the seal cap 219 vertically supports the boat 217 .
  • a loading elevator 113 as elevator means is provided between the boat elevator 121 and the cassette shelf 109 .
  • a wafer loader 112 as transfer means is mounted on the loading elevator 113 .
  • a furnace opening shutter 116 as a shielding member is provided by the side of the boat elevator 121 .
  • the furnace opening shutter 116 has an opening/closing mechanism and closes a lower surface of the processing furnace 202 .
  • the cassette 100 in which the wafers 200 are rotated through 90° by the cassette stage 105 such that wafers 200 are brought into the cassette stage 105 from an external transfer apparatus (not shown) and the wafers 200 assume the horizontal attitudes.
  • the cassette 100 is transferred to the cassette shelf 109 or the auxiliary cassette shelf 110 from the cassette stage 105 by cooperation of vertical movement and lateral movement of the cassette elevator 115 and forward and backward movement and rotational movement of the cassette loader 114 .
  • the cassette shelf 109 includes a transfer shelf 123 in which cassette 100 to be transferred by the wafer loader 112 is accommodated.
  • the cassette 100 on which the wafers 200 are set is transferred to the transfer shelf 123 by the cassette elevator 115 and the cassette loader 114 .
  • the wafers 200 are loaded on the boat 217 which is lowered from the transfer shelf 123 by cooperation of forward and backward motion and rotational motion of the wafer loader 112 and vertical motion of the loading elevator 113 .
  • the boat 217 is inserted into the processing furnace 202 by the boat elevator 121 , and the processing furnace 202 is air-tightly closed with the seal cap 219 .
  • the wafers 200 are heated, processing gas is supplied into the processing furnace 202 , and the wafers 200 are processed.
  • the wafers 200 are moved to the cassette 100 of the transfer shelf 123 from the boat 217 following the above procedure in reverse, the cassette 100 is moved to the cassette stage 105 from the transfer shelf 123 by the cassette loader 114 , and is transferred out from the casing 101 by the external transfer apparatus (not shown).
  • the furnace opening shutter 116 closes the lower surface of the processing furnace 202 to prevent outside air from entering into the processing furnace 202 .
  • the transfer motions of the cassette loader 114 and the like are controlled by transfer control means 124 .
  • the present invention can be preferably utilized especially for a substrate processing apparatus which processes a semiconductor wafer, and for a device producing method using the substrate processing apparatus.

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070218203A1 (en) * 2004-08-11 2007-09-20 Meidensha Corporation Method and Equipment for Forming Oxide Film
US20090035951A1 (en) * 2007-07-20 2009-02-05 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device
US20090163040A1 (en) * 2006-08-11 2009-06-25 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus and Manufacturing Method of Semiconductor Device
US20090205568A1 (en) * 2005-02-17 2009-08-20 Norikazu Mizuno Substrate processing method and substrate processing apparatus
US20090277382A1 (en) * 2008-05-09 2009-11-12 Hitachi-Kokusai Electric Inc. Semiconductor manufacturing apparatus
US20100035437A1 (en) * 2008-07-30 2010-02-11 Hitachi Kokusai Electric, Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US20120079985A1 (en) * 2008-06-20 2012-04-05 Hitachi Kokusai Electric Inc. Method for processing substrate and substrate processing apparatus
US8193032B2 (en) 2010-06-29 2012-06-05 International Business Machines Corporation Ultrathin spacer formation for carbon-based FET
USD1020668S1 (en) * 2021-06-16 2024-04-02 Kokusai Electric Corporation Gas injector for substrate processing apparatus

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CN100555582C (zh) * 2004-08-11 2009-10-28 株式会社明电舍 用于形成氧化物膜的方法和设备
JP4632843B2 (ja) 2005-04-12 2011-02-16 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリ装置及びその製造方法
US20100162952A1 (en) * 2005-09-27 2010-07-01 Hitachi Kokusai Electric Inc. Substrate processing apparatus
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JP2008078448A (ja) * 2006-09-22 2008-04-03 Hitachi Kokusai Electric Inc 基板処理装置
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JP5665289B2 (ja) 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
CN105336645B (zh) * 2014-08-14 2021-04-30 无锡华瑛微电子技术有限公司 利用含臭氧的流体处理半导体晶片表面的装置及方法
JP6820793B2 (ja) * 2017-04-27 2021-01-27 東京エレクトロン株式会社 基板処理装置、排気管のコーティング方法及び基板処理方法
JP6994483B2 (ja) * 2018-09-26 2022-01-14 株式会社Kokusai Electric 半導体装置の製造方法、プログラム、及び基板処理装置

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529474A (en) * 1983-02-01 1985-07-16 Canon Kabushiki Kaisha Method of cleaning apparatus for forming deposited film
US4699805A (en) * 1986-07-03 1987-10-13 Motorola Inc. Process and apparatus for the low pressure chemical vapor deposition of thin films
US5252133A (en) * 1990-12-19 1993-10-12 Kabushiki Kaisha Toshiba Vertically oriented CVD apparatus including gas inlet tube having gas injection holes
US5484484A (en) * 1993-07-03 1996-01-16 Tokyo Electron Kabushiki Thermal processing method and apparatus therefor
US5709757A (en) * 1994-08-25 1998-01-20 Tokyo Electron Limited Film forming and dry cleaning apparatus and method
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
US6074486A (en) * 1997-04-22 2000-06-13 Samsung Electronics Co., Ltd. Apparatus and method for manufacturing a semiconductor device having hemispherical grains
US6146461A (en) * 1999-09-17 2000-11-14 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus having a gas diffusing nozzle designed to diffuse gas equally at all levels
US20010024387A1 (en) * 1999-12-03 2001-09-27 Ivo Raaijmakers Conformal thin films over textured capacitor electrodes
US20010050054A1 (en) * 2000-03-17 2001-12-13 Samsung Electronics Co., Ltd. Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
US20020045966A1 (en) * 2000-10-18 2002-04-18 Hee-Tae Lee Chemical vapor deposition process and apparatus for performing the same
US20020073923A1 (en) * 1998-11-27 2002-06-20 Yukimasa Saito Heat treatment apparatus and cleaning method of the same
US20020129769A1 (en) * 2001-03-19 2002-09-19 Apex Co. Ltd. Chemical vapor deposition apparatus
US20030000473A1 (en) * 1999-01-18 2003-01-02 Chae Yun-Sook Method of delivering gas into reaction chamber and shower head used to deliver gas
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US20030213435A1 (en) * 2002-04-11 2003-11-20 Kazuyuki Okuda Vertical type semiconductor device producing apparatus
US20030228415A1 (en) * 2000-10-17 2003-12-11 Xiangxin Bi Coating formation by reactive deposition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01296613A (ja) 1988-05-25 1989-11-30 Nec Corp ３−ｖ族化合物半導体の気相成長方法
JPH02267197A (ja) 1989-04-06 1990-10-31 Nec Corp 炭化硅素の成長方法
JP3140068B2 (ja) * 1991-01-31 2001-03-05 東京エレクトロン株式会社 クリーニング方法
JPH11345778A (ja) * 1998-05-29 1999-12-14 Tokyo Electron Ltd 成膜装置のクリーニング方法及びそのクリーニング機構
JP3437830B2 (ja) 2000-11-28 2003-08-18 東京エレクトロン株式会社 成膜方法
JP2003045864A (ja) * 2001-08-02 2003-02-14 Hitachi Kokusai Electric Inc 基板処理装置
JP4090347B2 (ja) * 2002-03-18 2008-05-28 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP3670628B2 (ja) * 2002-06-20 2005-07-13 株式会社東芝 成膜方法、成膜装置、および半導体装置の製造方法
JP4113755B2 (ja) * 2002-10-03 2008-07-09 東京エレクトロン株式会社 処理装置
JP2004288899A (ja) 2003-03-24 2004-10-14 Tokyo Electron Ltd 成膜方法および基板処理装置

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529474A (en) * 1983-02-01 1985-07-16 Canon Kabushiki Kaisha Method of cleaning apparatus for forming deposited film
US4699805A (en) * 1986-07-03 1987-10-13 Motorola Inc. Process and apparatus for the low pressure chemical vapor deposition of thin films
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
US5252133A (en) * 1990-12-19 1993-10-12 Kabushiki Kaisha Toshiba Vertically oriented CVD apparatus including gas inlet tube having gas injection holes
US5484484A (en) * 1993-07-03 1996-01-16 Tokyo Electron Kabushiki Thermal processing method and apparatus therefor
US5709757A (en) * 1994-08-25 1998-01-20 Tokyo Electron Limited Film forming and dry cleaning apparatus and method
US6074486A (en) * 1997-04-22 2000-06-13 Samsung Electronics Co., Ltd. Apparatus and method for manufacturing a semiconductor device having hemispherical grains
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US20020073923A1 (en) * 1998-11-27 2002-06-20 Yukimasa Saito Heat treatment apparatus and cleaning method of the same
US20030000473A1 (en) * 1999-01-18 2003-01-02 Chae Yun-Sook Method of delivering gas into reaction chamber and shower head used to deliver gas
US6146461A (en) * 1999-09-17 2000-11-14 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus having a gas diffusing nozzle designed to diffuse gas equally at all levels
US20010024387A1 (en) * 1999-12-03 2001-09-27 Ivo Raaijmakers Conformal thin films over textured capacitor electrodes
US20010050054A1 (en) * 2000-03-17 2001-12-13 Samsung Electronics Co., Ltd. Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
US20030228415A1 (en) * 2000-10-17 2003-12-11 Xiangxin Bi Coating formation by reactive deposition
US20020045966A1 (en) * 2000-10-18 2002-04-18 Hee-Tae Lee Chemical vapor deposition process and apparatus for performing the same
US20020129769A1 (en) * 2001-03-19 2002-09-19 Apex Co. Ltd. Chemical vapor deposition apparatus
US20030213435A1 (en) * 2002-04-11 2003-11-20 Kazuyuki Okuda Vertical type semiconductor device producing apparatus

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070218203A1 (en) * 2004-08-11 2007-09-20 Meidensha Corporation Method and Equipment for Forming Oxide Film
US7772133B2 (en) 2004-08-11 2010-08-10 Meidensha Corporation Method and equipment for forming oxide film
US20090205568A1 (en) * 2005-02-17 2009-08-20 Norikazu Mizuno Substrate processing method and substrate processing apparatus
US8367530B2 (en) 2006-08-11 2013-02-05 Hitachi Kokusai Electric Inc. Substrate processing apparatus and manufacturing method of semiconductor device
US7795143B2 (en) * 2006-08-11 2010-09-14 Hitachi Kokusai Electric Inc. Substrate processing apparatus and manufacturing method of semiconductor device
US20100190355A1 (en) * 2006-08-11 2010-07-29 Hitachi Kokusai Electric Inc. Substrate processing apparatus and manufacturing method of semiconductor device
US20090163040A1 (en) * 2006-08-11 2009-06-25 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus and Manufacturing Method of Semiconductor Device
US20090035951A1 (en) * 2007-07-20 2009-02-05 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device
US8535479B2 (en) 2008-05-09 2013-09-17 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device, and semiconductor device
US20090277382A1 (en) * 2008-05-09 2009-11-12 Hitachi-Kokusai Electric Inc. Semiconductor manufacturing apparatus
US20120079985A1 (en) * 2008-06-20 2012-04-05 Hitachi Kokusai Electric Inc. Method for processing substrate and substrate processing apparatus
US9768012B2 (en) 2008-06-20 2017-09-19 Hitachi Kokusai Electric Inc. Method for processing substrate and substrate processing apparatus
US20100035437A1 (en) * 2008-07-30 2010-02-11 Hitachi Kokusai Electric, Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US8741063B2 (en) * 2008-07-30 2014-06-03 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US9206931B2 (en) 2008-07-30 2015-12-08 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US8193032B2 (en) 2010-06-29 2012-06-05 International Business Machines Corporation Ultrathin spacer formation for carbon-based FET
US8274072B2 (en) 2010-06-29 2012-09-25 International Business Machines Corporation Ultrathin spacer formation for carbon-based FET
USD1020668S1 (en) * 2021-06-16 2024-04-02 Kokusai Electric Corporation Gas injector for substrate processing apparatus

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CN1762042A (zh) 2006-04-19
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TW200514130A (en) 2005-04-16
KR100819639B1 (ko) 2008-04-03
US8598047B2 (en) 2013-12-03
TWI243403B (en) 2005-11-11
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JP3913723B2 (ja) 2007-05-09
CN100367459C (zh) 2008-02-06

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