US20030000473A1 - Method of delivering gas into reaction chamber and shower head used to deliver gas - Google Patents
Method of delivering gas into reaction chamber and shower head used to deliver gas Download PDFInfo
- Publication number
- US20030000473A1 US20030000473A1 US10/213,078 US21307802A US2003000473A1 US 20030000473 A1 US20030000473 A1 US 20030000473A1 US 21307802 A US21307802 A US 21307802A US 2003000473 A1 US2003000473 A1 US 2003000473A1
- Authority
- US
- United States
- Prior art keywords
- gas
- reaction
- gases
- reaction gases
- shower head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
Definitions
- the present invention relates to a method of delivering reaction gases during deposition of a predetermined layer onto a substrate with two or more mutually-reactive reaction gases, and a shower head used to introduce the reaction gases.
- PVD Physical vapor deposition
- CVD chemical vapor deposition
- ALD atomic layer deposition
- PCVD pulsed CVD
- FIGS. 1 and 2 show a mixing-type shower head.
- first and second reaction gases enter into a shower head 10 at the same time or at different times, according to the opening or closing action of valves 16 , via intakes 12 and 14 , respectively.
- the first and second reaction gases are mixed in the shower head 10 , exit through outlets 18 on the bottom surface of the shower head 10 , and are deposited on a substrate (not shown) loaded in a reaction chamber.
- the first and second reaction gases particularly if they are mutually reactive, react with each other and form particles, which are deposited within the shower head 10 . Therefore, the shower head is easily contaminated.
- FIGS. 3 and 4 show a separative type shower head 30 , for separately providing first and second reaction gases, to solve the above problem.
- different passages are provided to prevent the first and second reaction gases from reacting with each other within the shower head 30 , such that the first and second reaction gases are discharged respectively via separate sets of interspersed outlets 38 and 40 .
- the separative type shower head 30 when PCVD is performed using the separative type shower head 30 , the first reaction gas and other reactants remaining within the reaction chamber flow backward and into the passage for the second reaction gas, because there is no downward flow at that point coming from the passage for the second reaction gas. Then, when the second reaction gas is delivered, it reacts with the first gas and other reactants, thereby producing contaminating particles.
- the present invention provides a gas delivery method in which a first reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via independent gas outlets to prevent the reaction gases from being mixed.
- the predetermined film can be deposited by atomic layer deposition (ALD) or pulsed chemical vapor deposition (PCVD).
- the other reaction gases include second and third reaction gases each reactive to the first reaction gas, and the second and third reaction gases can be delivered simultaneously with the first reaction gas.
- the second and third reaction gases can be simultaneously delivered via the same gas outlet to be mixed with each other or alternately delivered via the same gas outlet at different times to prevent the two reaction gases from being mixed.
- the second and third reaction gases can be delivered via independent gas outlets, respectively, to prevent the two reaction gases from being mixed.
- a gas delivery method including: delivering the first reaction gas toward the edge of the substrate for a designated period of time; purging the reaction gas remaining within the reaction chamber while blocking the inflow of the first reaction gas; delivering the second reaction gas toward the central portion of the substrate for a designated period of time; and purging the reaction gas remaining within the reaction chamber while blocking the inflow of the second reaction gas.
- each of the first and second reaction gases is delivered together with a carrier gas in order to smoothly supply the first and second reaction gases.
- the reaction chamber is purged by continuously delivering only the carrier gas while blocking the first and second reaction gases during each of the purging steps.
- the first reaction gas delivering step, the purging step, the second reaction gas delivering step, and the purging step can be repeated to deposit the material to a desired thickness.
- the shower head appropriate for carrying out the above method is installed at the upper portion of a reaction chamber in which a substrate is seated on the lower portion.
- the shower head has a gas supply line formed on the upper surface of the shower head for receiving a first reaction gas from a supply source of the first reaction gas; gas supply lines formed on the upper surface of the shower head for receiving other reaction gases from a supply source of the other reaction gases; a plurality of outlets for the first reaction gas formed along the edge of the lower surface of the shower head for discharging the first reaction gas; a plurality of outlets for each of the other reaction gases formed on the central portion of the lower surface of the shower head, for discharging the other reaction gases; a gas passage formed within the body of the shower head, for connecting the gas supply line for the first reaction gas to the plurality of outlets for the first reaction gas; and gas passages formed independently of the gas passage for the first reaction gas within the body of the shower head, for connecting the supply lines for the other reaction gases to the plurality of outlets for each of the other reaction gases.
- the plurality of outlets for the first reaction gas can be extended further downward toward the substrate than the plurality of outlets for each of the other reaction gases such that the plurality of outlets for the first reaction gas are closer to the substrate installed in the chamber than the plurality of outlets for each of the other reaction gases when the shower head is installed in the upper portion of the reaction chamber.
- one of the mutually-reactive reaction gases is delivered toward the edges of a substrate, and the others are delivered independently toward the center of the substrate.
- generation of contaminating particles within a shower head and a reaction chamber can be prevented, and a high deposition rate can be obtained.
- FIG. 1 is a cross-sectional view illustrating the configuration of a conventional mixing-type shower head
- FIG. 2 is a bottom view of the shower head of FIG. 1;
- FIG. 3 is a cross-sectional view illustrating the configuration of a conventional separative type shower head
- FIG. 4 is a bottom view of the shower head of FIG. 3;
- FIG. 5 is a graph showing the relationship between the flow rate of a purge gas and deposition rate when a TiN film is formed on a substrate using the shower head of FIGS. 3 and 4;
- FIG. 6 is a cross-sectional view illustrating the configuration of an embodiment of a shower head used in a gas delivery method according to the present invention
- FIG. 7 is a bottom view of the shower head of FIG. 6;
- FIG. 8 is a cross-sectional view illustrating the configuration of another embodiment of a shower head used in a gas delivery method according to the present invention.
- FIG. 9 is a bottom view of the shower head of FIG. 8;
- FIGS. 10 through 13 are views conceptually illustrating a gas delivery method according to embodiments of the present invention.
- FIGS. 6 and 7 show the configuration of a shower head according to an embodiment of the present invention.
- gas supply lines 62 and 64 for first and second reaction gases, and respective valves 66 are installed over a shower head 60 according to the present embodiment.
- Supply lines 68 for a purge gas (carrier gas) transfer the first and second reaction gases and purge the shower head 60 and a reaction chamber (not shown).
- Supply lines 68 are equipped with valves 70 .
- the interior of the shower head 60 has passages for first and second reaction gases to prevent the first and second reaction gases from being mixed.
- one reaction gas is allowed to be discharged to outlets 72 formed around the outer edge of the bottom surface of the shower head 60
- the other reaction gas is allowed to be discharged to outlets 74 formed in a central portion of the bottom surface of the shower head 60 . That is, as shown in FIG. 7, the bottom surface of the shower head 60 is provided with a plurality of first reaction gas outlets 72 which are spaced apart from each other along the edge, and a plurality of second reaction gas outlets 74 which are spaced apart from each other in the central portion.
- the first reaction gas outlets 72 are grouped around the outside edge of the bottom surface of the shower head, and the second reaction gas outlets 74 are grouped in the central portion of the bottom surface of the shower head. Therefore, when delivering the first reaction gas from the first gas outlets grouped along the outside edge of the bottom surface of the shower head, there is less backward flow of the first reaction gas into the gas outlets for the second reaction gas than there would be in the conventional interspersed shower head.
- a third reaction gas which is reactive to the first reaction gas can be supplied together with the second reaction gas through the second reaction gas supply line 64 .
- the second and third reaction gases do not react with each other or weakly react with each other, they can be supplied simultaneously. On the other hand, if they are reactive, they can be alternately supplied at different times.
- FIGS. 8 and 9 show the configuration of a shower head according to another embodiment of the present invention.
- the shower head 80 shown in FIGS. 8 and 9 is obtained by further adding a third reaction gas supply line 86 and third reaction gas outlets 98 to the shower head shown in FIGS. 6 and 7.
- third reaction gas outlets 98 are independent of first and second reaction gas outlets 72 and 74 .
- Third reaction gas passages for connecting the third reaction gas supply line 86 to each of the third reaction gas outlets 98 are separate from the first and second reaction gas passages, such that the three reaction gases can be delivered independently of one another.
- Third reaction gas supply line 86 is also provided with a purge gas line 68 and valve 70 .
- the first reaction gas outlets 72 can be extended farther downward than the second/third reaction gas outlets 74 and 98 , so that the first reaction gas outlets 72 are closer to a substrate loaded in a reaction chamber. This is illustrated by reference numeral 142 in FIG. 11. This downward extension of the first reaction gas outlets further assists in preventing backward flow of the first reaction gas into the second (or third) reaction gas outlets. It is also preferable that the first reaction gas outlets 142 face the edge of a substrate or are located beyond the outside of the substrate, so that the diameter of the shower head is greater than or equal to that of the substrate.
- FIGS. 10 through 13 conceptually illustrate processes for delivering gases according to embodiments of the present invention.
- a first reaction gas and a carrier gas come out of outlets 140 formed on the edge of a shower head and flow toward the edge of a substrate 110 loaded on a substrate holder 120 in a reaction chamber 100 , as indicated by arrows B.
- a second reaction gas and a carrier gas come out of outlets 130 formed in the central portion of the shower head and flow toward the central portion of the substrate 110 , as indicated by arrow A.
- a direct purging effect of a purge gas (carrier gas) on a substrate is reduced, so that a reduction in the deposition rate is prevented despite an increase in the flow rate of the purge gas.
- the outlets 130 and 140 are segregated from each other, the first and second reaction gases cannot easily flow backward into outlets for the second and first reaction gases respectively, so that contamination of the interior of the shower head and gas lines is prevented.
- the first reaction gas outlets 140 face the outside edge of the substrate 110 or are located beyond the edge of the substrate 110 in order to prevent excessive purging of the second reaction gas adsorbed on the substrate 110 .
- This is easily accomplished by using a shower head whose diameter is greater than or equal to the diameter of the substrate, as described above.
- FIG. 11 conceptually shows a process for delivering a gas according to another embodiment of the present invention.
- the same reference numerals as those in FIG. 10 denote the same elements, so they will not be described in detail.
- a mutual backward flow between the first reaction gas C and the second reaction gas A can be even more effectively prevented by using a shower head having a structure in which first reaction gas outlets 142 extend farther toward the substrate 110 than the second reaction gas outlets 130 .
- the first and second reaction gases in the above-described embodiments can be delivered in a PCVD method.
- PCVD is more fully described in U.S. patent application Ser. No. 09/156,724 filed on Sep. 18, 1998 by a common Assignee, entitled “Method of Forming Metal Nitride Film by Chemical Vapor Deposition and Method of Forming Metal Contact of Semiconductor Device Using the Same”, the disclosure of which is hereby incorporated herein by reference in its entirety.
- Ser. No. 09/156,724 filed on Sep. 18, 1998 by a common Assignee, entitled “Method of Forming Metal Nitride Film by Chemical Vapor Deposition and Method of Forming Metal Contact of Semiconductor Device Using the Same”, the disclosure of which is hereby incorporated herein by reference in its entirety.
- PCVD is a type of CVD where reaction gases and purge gases are alternately introduced for a predetermined amount of time in a sequence of a first reaction gas, a purge gas, a second reaction gas, and the purge gas.
- PCVD is similar to ALD, but PCVD significantly increases the deposition rate with both chemically-adsorbed and physically-adsorbed reaction gases remaining on a substrate, while only the chemically-adsorbed reaction gas remains on the substrate in the ALD.
- a semiconductor wafer 110 or a wafer boat (not shown) on which a plurality of substrates are loaded is loaded into a reaction chamber 100 structured as shown in any of FIGS. 10 through 13.
- the temperature and pressure within the reaction chamber 100 are set to predetermined levels and stabilized.
- a valve installed on the first reaction gas supply line is opened, and a first reaction gas is thus delivered for a predetermined period of time as indicated by arrow B, C, D or E.
- the first reaction gas delivered toward the edge of the wafer 110 is physically or chemically adsorbed on the wafer 110 .
- a carrier gas together with the first reaction gas can be delivered for a smooth supply of the first reaction gas.
- An inert gas is used as the carrier gas, and can be delivered via the supply line 68 for a purge gas.
- the valve installed on the first reaction gas supply line is closed to block the supply of the first reaction gas, and the purge gas is delivered for a predetermined period of time to purge reaction gases remaining within the shower head or the reaction chamber without being adsorbed on the wafer 110 .
- purging is performed by blocking only the first reaction gas and continuously delivering the carrier gas, without the need to deliver a special purge gas.
- a second reaction gas is delivered for a predetermined period of time as indicated by the arrows A.
- the second reaction gas delivered toward the central portion of the wafer 110 reacts with the first reaction gas adsorbed on the wafer 110 to form a desired material film.
- an inert carrier gas can be delivered together with the second reaction gas to achieve a smooth supply of the second reaction gas.
- a purge gas is delivered for a predetermined period of time while blocking the supply of the second reaction gas, thereby purging reaction gases or contaminating particles remaining within the shower head and the reaction chamber.
- a carrier gas is delivered together with the second reaction gas, the carrier gas is continuously delivered while only the second reaction gas is blocked, thereby performing a purging operation without the need to deliver a special purge gas.
- Such a cycle of delivering the first reaction gas, purging, delivering the second reaction gas, and purging can be repeated until a material film having a desired thickness is formed. Also, the order of the first and second reaction gases to be delivered can be changed according to the property of a film desired to be formed.
- a TiN film is formed on a substrate using each of the shower heads shown in FIGS. 3 and 6 to compare the effect of a conventional gas delivery method with that of a gas delivery method according to the present invention.
- NH 3 and TiCl 4 are used as first and second reaction gases, respectively, and Ar is used as both a carrier gas and a purge gas.
- Ar is used as both a carrier gas and a purge gas.
- temperature of substrate 500° C.
- temperature of substrate 500° C.
- the two methods have similar deposition rates, they differ widely from each other in the number of contaminating particles formed on a substrate. That is, more than 8000 contaminating particles are observed in the conventional method, but less than 50 contaminating particles are observed in the method according to the present invention.
- the flow rate of the carrier and purge gas (Ar) is increased in the conventional method, the number of contaminating particles is reduced. If the flow rate of Ar is increased to 600 sccm without a change in the other conditions in the conventional method having the above-described described conditions, the number of contaminating particles is reduced, but the deposition rate is decreased to 8 ⁇ /min or less. This low deposition rate impedes the use of the conventional method in a mass-production method of semiconductor devices.
- the method according to the present invention can obtain superior results compared to the conventional method not only in the deposition rate and the number of contaminating particles, but also in the surface resistance and the uniformity of the surface resistance. That is, it is preferable that a deposited TiN film in the present experimental example has a surface resistance as low as possible since it is generally used as a barrier metal layer. As can be seen from Table 1, the method according to the present invention obtains a smaller surface resistance than the surface resistance of the conventional method, and also obtains excellent results in the uniformity of the surface resistance. Here, the surface resistance was measured at 49 different places on a substrate by a four-point probe method.
- the embodiments according to the present invention and experimental example of a method of delivering mutually-reactive first and second reaction gases have been disclosed above.
- the gas delivery method according to the present invention is applicable not only to a deposition process using two reaction gases but also to a deposition process using three reaction gases or more such as BST ((Ba,Sr)TiO 3 ) or the like.
- reaction gases can be delivered via the shower head 80 shown in FIG. 8.
- the reaction gas which most easily flows backward is supplied to the edge of the substrate via the first reaction gas supply line 62 , and the remaining reaction gases are supplied to the central portion of the substrate via the second and third reaction gas supply lines 64 and 86 .
- the shower head 60 shown in FIG. 6 or a gas delivery system shown in FIGS. 10 through 13 can be used. That is, one reaction gas having a strong reactivity is delivered toward the edge of the substrate via the first reaction gas supply line 62 (or as indicated by arrow B, C, D or E) while the remaining second and third reaction gases are delivered toward the central portion of the substrate via the second reaction gas supply line 64 (or as indicated by arrow A).
- the second and third reaction gases can be delivered simultaneously, or can be delivered alternately at different times.
Abstract
A method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles. In this method, one reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via an independent gas outlet to prevent the reaction gases from being mixed. In the shower head, separate passages are provided to prevent the first reaction gas from mixing with the other reaction gases by delivering the first reaction gas from outlets formed around the edge of the bottom surface of the shower head. The other reaction gases are delivered from outlets formed in the central portion of the bottom surface of the shower head. Accordingly, one of the mutually-reactive gases is delivered toward the central portion of the substrate, and the others are delivered toward the edge of the substrate.
Description
- 1. Field of the Invention
- The present invention relates to a method of delivering reaction gases during deposition of a predetermined layer onto a substrate with two or more mutually-reactive reaction gases, and a shower head used to introduce the reaction gases.
- 2. Background of the Related Art
- Physical vapor deposition (PVD, also referred to as “sputtering”), chemical vapor deposition (CVD), atomic layer deposition (ALD), and pulsed CVD (PCVD, the details of which will be described later) can be used to form a predetermined layer by depositing a vapor material on a substrate. When a predetermined layer is formed by conventional vapor deposition methods, source gases (reaction gas) are generally provided by a shower head installed at the upper portion of a reaction chamber.
- FIGS. 1 and 2 show a mixing-type shower head. Here, first and second reaction gases enter into a
shower head 10 at the same time or at different times, according to the opening or closing action ofvalves 16, viaintakes shower head 10, exit throughoutlets 18 on the bottom surface of theshower head 10, and are deposited on a substrate (not shown) loaded in a reaction chamber. However, in the mixing-type shower head 10 having such a configuration, the first and second reaction gases, particularly if they are mutually reactive, react with each other and form particles, which are deposited within theshower head 10. Therefore, the shower head is easily contaminated. - FIGS. 3 and 4 show a separative
type shower head 30, for separately providing first and second reaction gases, to solve the above problem. Referring to FIGS. 3 and 4, different passages are provided to prevent the first and second reaction gases from reacting with each other within theshower head 30, such that the first and second reaction gases are discharged respectively via separate sets of interspersedoutlets type shower head 30, the first reaction gas and other reactants remaining within the reaction chamber flow backward and into the passage for the second reaction gas, because there is no downward flow at that point coming from the passage for the second reaction gas. Then, when the second reaction gas is delivered, it reacts with the first gas and other reactants, thereby producing contaminating particles. Likewise, the same thing occurs in the passage for the first reaction gas, which becomes contaminated with the second reaction gas when only the second reaction gas is flowing. evident that setting the flow rate of purge gas to over about 500 sccm prevents contaminating particles from being produced. However, it can be seen that setting the flow rate of the purge gas to over 500 sccm greatly reduces the speed of growth of the TiN film. - To solve the above problems, it is an object of the present invention to provide a method of delivering gas whereby problems of both an increase in contaminating particles and a reduction in deposition rate can be solved, and to provide a shower head appropriate for the gas delivery method.
- Accordingly, to achieve the first object, the present invention provides a gas delivery method in which a first reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via independent gas outlets to prevent the reaction gases from being mixed. Here, the predetermined film can be deposited by atomic layer deposition (ALD) or pulsed chemical vapor deposition (PCVD).
- The other reaction gases include second and third reaction gases each reactive to the first reaction gas, and the second and third reaction gases can be delivered simultaneously with the first reaction gas. The second and third reaction gases can be simultaneously delivered via the same gas outlet to be mixed with each other or alternately delivered via the same gas outlet at different times to prevent the two reaction gases from being mixed. Alternatively, the second and third reaction gases can be delivered via independent gas outlets, respectively, to prevent the two reaction gases from being mixed.
- According to another embodiment of the present invention, there is provided a gas delivery method including: delivering the first reaction gas toward the edge of the substrate for a designated period of time; purging the reaction gas remaining within the reaction chamber while blocking the inflow of the first reaction gas; delivering the second reaction gas toward the central portion of the substrate for a designated period of time; and purging the reaction gas remaining within the reaction chamber while blocking the inflow of the second reaction gas.
- In the steps of delivering the first reaction gas and the second reaction gas, each of the first and second reaction gases is delivered together with a carrier gas in order to smoothly supply the first and second reaction gases. The reaction chamber is purged by continuously delivering only the carrier gas while blocking the first and second reaction gases during each of the purging steps. Also, the first reaction gas delivering step, the purging step, the second reaction gas delivering step, and the purging step can be repeated to deposit the material to a desired thickness.
- The shower head appropriate for carrying out the above method is installed at the upper portion of a reaction chamber in which a substrate is seated on the lower portion. The shower head has a gas supply line formed on the upper surface of the shower head for receiving a first reaction gas from a supply source of the first reaction gas; gas supply lines formed on the upper surface of the shower head for receiving other reaction gases from a supply source of the other reaction gases; a plurality of outlets for the first reaction gas formed along the edge of the lower surface of the shower head for discharging the first reaction gas; a plurality of outlets for each of the other reaction gases formed on the central portion of the lower surface of the shower head, for discharging the other reaction gases; a gas passage formed within the body of the shower head, for connecting the gas supply line for the first reaction gas to the plurality of outlets for the first reaction gas; and gas passages formed independently of the gas passage for the first reaction gas within the body of the shower head, for connecting the supply lines for the other reaction gases to the plurality of outlets for each of the other reaction gases.
- Here, the plurality of outlets for the first reaction gas can be extended further downward toward the substrate than the plurality of outlets for each of the other reaction gases such that the plurality of outlets for the first reaction gas are closer to the substrate installed in the chamber than the plurality of outlets for each of the other reaction gases when the shower head is installed in the upper portion of the reaction chamber.
- According to the present invention, one of the mutually-reactive reaction gases is delivered toward the edges of a substrate, and the others are delivered independently toward the center of the substrate. Thus, generation of contaminating particles within a shower head and a reaction chamber can be prevented, and a high deposition rate can be obtained.
- The above objectives and advantages of the present invention will become more apparent by describing in detail preferred embodiments thereof with reference to the attached drawings in which:
- FIG. 1 is a cross-sectional view illustrating the configuration of a conventional mixing-type shower head;
- FIG. 2 is a bottom view of the shower head of FIG. 1;
- FIG. 3 is a cross-sectional view illustrating the configuration of a conventional separative type shower head;
- FIG. 4 is a bottom view of the shower head of FIG. 3;
- FIG. 5 is a graph showing the relationship between the flow rate of a purge gas and deposition rate when a TiN film is formed on a substrate using the shower head of FIGS. 3 and 4;
- FIG. 6 is a cross-sectional view illustrating the configuration of an embodiment of a shower head used in a gas delivery method according to the present invention;
- FIG. 7 is a bottom view of the shower head of FIG. 6;
- FIG. 8 is a cross-sectional view illustrating the configuration of another embodiment of a shower head used in a gas delivery method according to the present invention;
- FIG. 9 is a bottom view of the shower head of FIG. 8;
- FIGS. 10 through 13 are views conceptually illustrating a gas delivery method according to embodiments of the present invention.
- Hereinafter, preferred embodiments of the present invention will be described referring to the attached drawings. First, the structure of a shower head appropriate for a gas delivery method according to the present invention will be described.
- FIGS. 6 and 7 show the configuration of a shower head according to an embodiment of the present invention. As shown in FIG. 6,
gas supply lines respective valves 66 are installed over ashower head 60 according to the present embodiment.Supply lines 68 for a purge gas (carrier gas) transfer the first and second reaction gases and purge theshower head 60 and a reaction chamber (not shown).Supply lines 68 are equipped withvalves 70. - The interior of the
shower head 60 has passages for first and second reaction gases to prevent the first and second reaction gases from being mixed. In particular, one reaction gas is allowed to be discharged tooutlets 72 formed around the outer edge of the bottom surface of theshower head 60, and the other reaction gas is allowed to be discharged tooutlets 74 formed in a central portion of the bottom surface of theshower head 60. That is, as shown in FIG. 7, the bottom surface of theshower head 60 is provided with a plurality of firstreaction gas outlets 72 which are spaced apart from each other along the edge, and a plurality of secondreaction gas outlets 74 which are spaced apart from each other in the central portion. - In particular, instead of being interspersed across the bottom surface of the conventional shower head as shown in FIG. 4, the first
reaction gas outlets 72 are grouped around the outside edge of the bottom surface of the shower head, and the secondreaction gas outlets 74 are grouped in the central portion of the bottom surface of the shower head. Therefore, when delivering the first reaction gas from the first gas outlets grouped along the outside edge of the bottom surface of the shower head, there is less backward flow of the first reaction gas into the gas outlets for the second reaction gas than there would be in the conventional interspersed shower head. - A third reaction gas which is reactive to the first reaction gas can be supplied together with the second reaction gas through the second reaction
gas supply line 64. Here, if the second and third reaction gases do not react with each other or weakly react with each other, they can be supplied simultaneously. On the other hand, if they are reactive, they can be alternately supplied at different times. - FIGS. 8 and 9 show the configuration of a shower head according to another embodiment of the present invention. The
shower head 80 shown in FIGS. 8 and 9 is obtained by further adding a third reactiongas supply line 86 and thirdreaction gas outlets 98 to the shower head shown in FIGS. 6 and 7. Here, thirdreaction gas outlets 98 are independent of first and secondreaction gas outlets gas supply line 86 to each of the thirdreaction gas outlets 98 are separate from the first and second reaction gas passages, such that the three reaction gases can be delivered independently of one another. Third reactiongas supply line 86 is also provided with apurge gas line 68 andvalve 70. - In any of the shower heads of FIGS. 6 through 9, the first
reaction gas outlets 72 can be extended farther downward than the second/thirdreaction gas outlets reaction gas outlets 72 are closer to a substrate loaded in a reaction chamber. This is illustrated byreference numeral 142 in FIG. 11. This downward extension of the first reaction gas outlets further assists in preventing backward flow of the first reaction gas into the second (or third) reaction gas outlets. It is also preferable that the firstreaction gas outlets 142 face the edge of a substrate or are located beyond the outside of the substrate, so that the diameter of the shower head is greater than or equal to that of the substrate. - A method of delivering gas according to an embodiment of the present invention will now be described. FIGS. 10 through 13 conceptually illustrate processes for delivering gases according to embodiments of the present invention.
- Referring to FIG. 10, a first reaction gas and a carrier gas come out of
outlets 140 formed on the edge of a shower head and flow toward the edge of asubstrate 110 loaded on asubstrate holder 120 in areaction chamber 100, as indicated by arrows B. A second reaction gas and a carrier gas come out ofoutlets 130 formed in the central portion of the shower head and flow toward the central portion of thesubstrate 110, as indicated by arrow A. In this way, a direct purging effect of a purge gas (carrier gas) on a substrate is reduced, so that a reduction in the deposition rate is prevented despite an increase in the flow rate of the purge gas. In addition, since theoutlets - Here, it is preferable that the first
reaction gas outlets 140 face the outside edge of thesubstrate 110 or are located beyond the edge of thesubstrate 110 in order to prevent excessive purging of the second reaction gas adsorbed on thesubstrate 110. This is easily accomplished by using a shower head whose diameter is greater than or equal to the diameter of the substrate, as described above. - FIG. 11 conceptually shows a process for delivering a gas according to another embodiment of the present invention. The same reference numerals as those in FIG. 10 denote the same elements, so they will not be described in detail.
- In the embodiment of FIG. 11, a mutual backward flow between the first reaction gas C and the second reaction gas A can be even more effectively prevented by using a shower head having a structure in which first
reaction gas outlets 142 extend farther toward thesubstrate 110 than the secondreaction gas outlets 130. - In another embodiment as shown in FIG. 12, only the second reaction gas is delivered as indicated by arrow A, and the first reaction gas is delivered laterally from
gas outlets 144 located in the sides of the reaction chamber toward thesubstrate 110 as indicated by arrows D. - In still another embodiment as shown in FIG. 13, only the second reaction gas is delivered from a shower head as indicated by arrow A, and the first reaction gas is delivered upward from
gas outlets 146 located at the edge of the lower portion of the reaction chamber as indicated by arrows E. - The first and second reaction gases in the above-described embodiments can be delivered in a PCVD method. PCVD is more fully described in U.S. patent application Ser. No. 09/156,724 filed on Sep. 18, 1998 by a common Assignee, entitled “Method of Forming Metal Nitride Film by Chemical Vapor Deposition and Method of Forming Metal Contact of Semiconductor Device Using the Same”, the disclosure of which is hereby incorporated herein by reference in its entirety. As described in U.S. patent application Ser. No. 09/156,724, PCVD is a type of CVD where reaction gases and purge gases are alternately introduced for a predetermined amount of time in a sequence of a first reaction gas, a purge gas, a second reaction gas, and the purge gas. PCVD is similar to ALD, but PCVD significantly increases the deposition rate with both chemically-adsorbed and physically-adsorbed reaction gases remaining on a substrate, while only the chemically-adsorbed reaction gas remains on the substrate in the ALD.
- The embodiment according to the present invention applied to the PCVD will now be described in detail.
- First, a
semiconductor wafer 110 or a wafer boat (not shown) on which a plurality of substrates are loaded is loaded into areaction chamber 100 structured as shown in any of FIGS. 10 through 13. The temperature and pressure within thereaction chamber 100 are set to predetermined levels and stabilized. - Next, a valve installed on the first reaction gas supply line is opened, and a first reaction gas is thus delivered for a predetermined period of time as indicated by arrow B, C, D or E. The first reaction gas delivered toward the edge of the
wafer 110 is physically or chemically adsorbed on thewafer 110. Here, a carrier gas together with the first reaction gas can be delivered for a smooth supply of the first reaction gas. An inert gas is used as the carrier gas, and can be delivered via thesupply line 68 for a purge gas. - The valve installed on the first reaction gas supply line is closed to block the supply of the first reaction gas, and the purge gas is delivered for a predetermined period of time to purge reaction gases remaining within the shower head or the reaction chamber without being adsorbed on the
wafer 110. Here, when the carrier gas is delivered together with the first reaction gas, purging is performed by blocking only the first reaction gas and continuously delivering the carrier gas, without the need to deliver a special purge gas. - A second reaction gas is delivered for a predetermined period of time as indicated by the arrows A. The second reaction gas delivered toward the central portion of the
wafer 110 reacts with the first reaction gas adsorbed on thewafer 110 to form a desired material film. Here, an inert carrier gas can be delivered together with the second reaction gas to achieve a smooth supply of the second reaction gas. - A purge gas is delivered for a predetermined period of time while blocking the supply of the second reaction gas, thereby purging reaction gases or contaminating particles remaining within the shower head and the reaction chamber. Here, when a carrier gas is delivered together with the second reaction gas, the carrier gas is continuously delivered while only the second reaction gas is blocked, thereby performing a purging operation without the need to deliver a special purge gas.
- Such a cycle of delivering the first reaction gas, purging, delivering the second reaction gas, and purging can be repeated until a material film having a desired thickness is formed. Also, the order of the first and second reaction gases to be delivered can be changed according to the property of a film desired to be formed.
- An experimental example is provided below, wherein a material film is deposited on a substrate by a PCVD method using a gas delivery method according to the present invention.
- In the present experimental example, a TiN film is formed on a substrate using each of the shower heads shown in FIGS. 3 and 6 to compare the effect of a conventional gas delivery method with that of a gas delivery method according to the present invention. NH3 and TiCl4 are used as first and second reaction gases, respectively, and Ar is used as both a carrier gas and a purge gas. The process conditions and one cycle of each of the conventional gas delivery method and the gas delivery method according to the present invention are as follows.
- 1. Conventional gas delivery method
- temperature of substrate: 500° C.
- pressure: 3torr
- one cycle:
NH 3 100 sccm +Ar 120 sccm (2 sec)→Ar 120 sccm (4 sec) →TiCl4 3 sccm+Ar 120 sccm (2 sec)→Ar 120 sccm (4 sec) - 2. Gas delivery method according to the present invention
- temperature of substrate: 500° C.
- pressure: 4torr
- one cycle:
NH 3 100 sccm+Ar 600 sccm (2 sec)→Ar 600 sccm (4 sec) →TiCl4 3 sccm+Ar 600 sccm (2 sec)→Ar 600 sccm (4 sec) - The results obtained by performing tens of cycles under the above-described conditions are shown in the following Table 1:
method according to the conventional method present invention deposition rate ≈30 >30 (Å/min) number of >8000 <50 contamination particles surface resistance 150 116 (μΩ-cm) uniformity (%) 14.3 8.4 of surface resistance (standard deviation) (standard deviation) 30 14.1 (maximum deviation) (maximum deviation) - As can be seen from Table 1, although the two methods have similar deposition rates, they differ widely from each other in the number of contaminating particles formed on a substrate. That is, more than 8000 contaminating particles are observed in the conventional method, but less than 50 contaminating particles are observed in the method according to the present invention. As described above, when the flow rate of the carrier and purge gas (Ar) is increased in the conventional method, the number of contaminating particles is reduced. If the flow rate of Ar is increased to 600 sccm without a change in the other conditions in the conventional method having the above-described described conditions, the number of contaminating particles is reduced, but the deposition rate is decreased to 8 Å/min or less. This low deposition rate impedes the use of the conventional method in a mass-production method of semiconductor devices.
- Also, it is evident that the method according to the present invention can obtain superior results compared to the conventional method not only in the deposition rate and the number of contaminating particles, but also in the surface resistance and the uniformity of the surface resistance. That is, it is preferable that a deposited TiN film in the present experimental example has a surface resistance as low as possible since it is generally used as a barrier metal layer. As can be seen from Table 1, the method according to the present invention obtains a smaller surface resistance than the surface resistance of the conventional method, and also obtains excellent results in the uniformity of the surface resistance. Here, the surface resistance was measured at 49 different places on a substrate by a four-point probe method.
- The embodiments according to the present invention and experimental example of a method of delivering mutually-reactive first and second reaction gases have been disclosed above. The gas delivery method according to the present invention is applicable not only to a deposition process using two reaction gases but also to a deposition process using three reaction gases or more such as BST ((Ba,Sr)TiO3) or the like. In such a deposition process using three reaction gases, reaction gases can be delivered via the
shower head 80 shown in FIG. 8. Here, the reaction gas which most easily flows backward is supplied to the edge of the substrate via the first reactiongas supply line 62, and the remaining reaction gases are supplied to the central portion of the substrate via the second and third reactiongas supply lines shower head 60 shown in FIG. 6 or a gas delivery system shown in FIGS. 10 through 13 can be used. That is, one reaction gas having a strong reactivity is delivered toward the edge of the substrate via the first reaction gas supply line 62 (or as indicated by arrow B, C, D or E) while the remaining second and third reaction gases are delivered toward the central portion of the substrate via the second reaction gas supply line 64 (or as indicated by arrow A). Here, the second and third reaction gases can be delivered simultaneously, or can be delivered alternately at different times. - According to the gas delivery method and the shower head according to the present invention as described above, in which mutually-reactive reaction gases are delivered to a substrate, one of the mutually-reactive gases is delivered toward the edge of the substrate, and the others are delivered toward the central portion of the substrate. Therefore, the deposition rate can be increased, and contaminating particles can be prevented from being produced within the shower head and a reaction chamber.
- The present invention is not limited to the embodiments set forth above, and it is clearly understood that many variations may be made within the scope of the present invention by anyone of skill in the art.
Claims (20)
1. A gas delivery method of delivering two or more mutually-reactive reaction gases into a reaction chamber to deposit a predetermined film on a substrate seated within the reaction chamber, the method comprising:
delivering a first reaction gas toward an outer edge of the substrate; and
delivering other reaction gases toward a central portion of the substrate, wherein each of the reaction gases is delivered via an independent gas outlet to prevent the reaction gases from being mixed.
2. The gas delivery method as claimed in claim 1 , wherein the predetermined film is deposited by atomic layer deposition.
3. The gas delivery method as claimed in claim 1 , wherein each of the first reaction gas and the other reaction gases are alternately delivered for designated periods of time.
4. The gas delivery method as claimed in claim 3 , wherein each of the first reaction gas and the other reaction gases is delivered together with a carrier gas.
5. The gas delivery method as claimed in claim 4 , wherein the carrier gas is inert.
6. The gas delivery method as claimed in claim 4 , wherein the reaction chamber is purged by delivering only the carrier gas for a period of time between delivery of the first reaction gas and the other reaction gases.
7. The gas delivery method as claimed in claim 1 , wherein the other reaction gases comprise second and third reaction gases that are each reactive to the first reaction gas, and the second and third reaction gases are simultaneously delivered via a common gas outlet so as to be mixed with each other during delivery.
8. The gas delivery method as claimed in claim 1 , wherein the other reaction gases comprise second and third reaction gases that are each reactive to the first reaction gas, and the second and third reaction gases are alternately delivered via a common gas outlet at different times to prevent mixing.
9. The gas delivery method as claimed in claim 1 , wherein the other reaction gases comprise second and third reaction gases each reactive to the first reaction gas, and the second and third reaction gases are delivered via independent gas outlets, respectively, to prevent mixing of the second and third reaction gases.
10. The gas delivery method as claimed in claim 1 , wherein the first reaction gas is delivered downward via gas outlets formed around an upper edge of the reaction chamber, and the other reaction gases are delivered downward via gas outlets formed on a central portion of an upper side of the reaction chamber.
11. The gas delivery method as claimed in claim 1 , wherein the first reaction gas is delivered laterally via gas outlets formed on a side surface of the reaction chamber, and the other reaction gases are delivered downward via gas outlets formed on a central portion of an upper side of the reaction chamber.
12. The gas delivery method as claimed in claim 1 , wherein the first reaction gas is delivered upward via gas outlets formed along an edge of a bottom surface of the reaction chamber, and the other reaction gases are delivered downward via gas outlets formed on a central portion of an upper side of the reaction chamber.
13. A gas delivery method of delivering a first reaction gas containing elements of a material to be deposited and a second reaction gas for forming the material by reacting with the first reaction gas via separate gas outlets to deposit the material on a substrate seated within a reaction chamber, the method comprising steps of:
(a) delivering the first reaction gas toward an outer edge of the substrate for a first period of time;
(b) purging the reaction chamber while blocking inflow of the first reaction gas;
(c) delivering the second reaction gas toward a central portion of the substrate for a second period of time; and
(d) purging the reaction chamber while blocking inflow of the second reaction gas.
14. The gas delivery method as claimed in claim 13 , wherein delivery of each of the first and second reaction gases is done together with a carrier gas in each of the steps (a) and (c) in order to smoothly supply the first and second reaction gases, and purging of the reaction chamber in each of the steps (b) and (d) is done by continuously delivering only the carrier gas while blocking the first and second reaction gases.
15. The gas delivery method as claimed in claim 14 , wherein the carrier gas is inert.
16. The gas delivery method as claimed in claim 13 , wherein the steps (a) through (d) are repeated so as to deposit the material to a desired thickness.
17. A shower head installed at an upper portion of a reaction chamber in which a substrate is seated on a lower portion thereof, so as to supply two or more mutually-reactive reaction gases, the shower head comprising:
a gas supply line formed on an upper surface of the shower head for receiving a first reaction gas from a supply source of the first reaction gas;
gas supply lines formed on the upper surface of the shower head for receiving other reaction gases from respective supply sources of the other reaction gases;
a plurality of outlets for the first reaction gas formed along an outer edge of a lower surface of the shower head for discharging the first reaction gas;
a plurality of outlets for each of the other reaction gases formed on a central portion of the lower surface of the shower head for discharging the other reaction gases;
a gas passage formed within a body of the shower head for connecting the gas supply line for the first reaction gas to the plurality of outlets for the first reaction gas; and
gas passages formed independently of the gas passage for the first reaction gas within the body of the shower head for connecting the supply lines for the other reaction gases to the plurality of outlets for each of the other reaction gases.
18. The shower head as claimed in claim 17 , wherein the plurality of outlets for the first reaction gas are extended further downward toward the substrate than the plurality of outlets for each of the other reaction gases, such that the plurality of outlets for the first reaction gas are closer to the substrate than the plurality of outlets for each of the other reaction gases when the shower head is installed in the upper portion of the reaction chamber.
19. The shower head as claimed in claim 17 , wherein a diameter of the edge of the bottom surface of the shower head on which the plurality of outlets for the first reaction gas are formed is greater than or equal to a diameter of the substrate.
20. The shower head as claimed in claim 17 , wherein the other reaction gases comprise second and third reaction gases that are each reactive to the first reaction gas, and the gas passages for the second and third reaction gases are formed independently of each other.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/213,078 US20030000473A1 (en) | 1999-01-18 | 2002-08-07 | Method of delivering gas into reaction chamber and shower head used to deliver gas |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR99-1279 | 1999-01-18 | ||
KR1019990001279A KR100331544B1 (en) | 1999-01-18 | 1999-01-18 | Method for introducing gases into a reactor chamber and a shower head used therein |
US09/323,014 US6398904B1 (en) | 1998-06-23 | 1999-06-01 | Wet etching system for manufacturing semiconductor devices |
US09/467,313 US6478872B1 (en) | 1999-01-18 | 1999-12-20 | Method of delivering gas into reaction chamber and shower head used to deliver gas |
US10/213,078 US20030000473A1 (en) | 1999-01-18 | 2002-08-07 | Method of delivering gas into reaction chamber and shower head used to deliver gas |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/323,014 Division US6398904B1 (en) | 1998-06-23 | 1999-06-01 | Wet etching system for manufacturing semiconductor devices |
US09/467,313 Division US6478872B1 (en) | 1999-01-18 | 1999-12-20 | Method of delivering gas into reaction chamber and shower head used to deliver gas |
Publications (1)
Publication Number | Publication Date |
---|---|
US20030000473A1 true US20030000473A1 (en) | 2003-01-02 |
Family
ID=19571596
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/467,313 Expired - Lifetime US6478872B1 (en) | 1999-01-18 | 1999-12-20 | Method of delivering gas into reaction chamber and shower head used to deliver gas |
US10/213,078 Abandoned US20030000473A1 (en) | 1999-01-18 | 2002-08-07 | Method of delivering gas into reaction chamber and shower head used to deliver gas |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/467,313 Expired - Lifetime US6478872B1 (en) | 1999-01-18 | 1999-12-20 | Method of delivering gas into reaction chamber and shower head used to deliver gas |
Country Status (3)
Country | Link |
---|---|
US (2) | US6478872B1 (en) |
JP (1) | JP2000212752A (en) |
KR (1) | KR100331544B1 (en) |
Cited By (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020166507A1 (en) * | 1999-03-12 | 2002-11-14 | Tokyo Electron Limited | Thin film forming apparatus |
US20040049908A1 (en) * | 2002-01-15 | 2004-03-18 | Quallion Llc | Electric storage battery construction and method of manufacture |
US20040123806A1 (en) * | 2002-12-17 | 2004-07-01 | Anam Semiconductor Inc. | Chemical vapor deposition apparatus and method |
US20040149211A1 (en) * | 2002-07-18 | 2004-08-05 | Jae-Young Ahn | Systems including heated shower heads for thin film deposition and related methods |
US20040173150A1 (en) * | 2003-03-03 | 2004-09-09 | Derderian Garo J. | Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces |
US6800139B1 (en) * | 1999-08-31 | 2004-10-05 | Tokyo Electron Limited | Film deposition apparatus and method |
US20040226507A1 (en) * | 2003-04-24 | 2004-11-18 | Carpenter Craig M. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
US20050022739A1 (en) * | 2002-07-08 | 2005-02-03 | Carpenter Craig M. | Apparatus and method for depositing materials onto microelectronic workpieces |
US20050061243A1 (en) * | 2003-09-18 | 2005-03-24 | Demetrius Sarigiannis | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
US20050081786A1 (en) * | 2003-10-15 | 2005-04-21 | Kubista David J. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US20050087130A1 (en) * | 2003-10-09 | 2005-04-28 | Derderian Garo J. | Apparatus and methods for plasma vapor deposition processes |
US20050087302A1 (en) * | 2003-10-10 | 2005-04-28 | Mardian Allen P. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US20050092248A1 (en) * | 2003-10-31 | 2005-05-05 | Sysnex Co., Ltd. | Chemical vapor deposition unit |
US20050126489A1 (en) * | 2003-12-10 | 2005-06-16 | Beaman Kevin L. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US20050164466A1 (en) * | 2004-01-28 | 2005-07-28 | Zheng Lingyi A. | Methods for forming small-scale capacitor structures |
US20050249887A1 (en) * | 2004-05-06 | 2005-11-10 | Dando Ross S | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US20050249873A1 (en) * | 2004-05-05 | 2005-11-10 | Demetrius Sarigiannis | Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices |
US20050268856A1 (en) * | 2004-06-02 | 2005-12-08 | Miller Matthew W | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US20060115957A1 (en) * | 2003-09-17 | 2006-06-01 | Cem Basceri | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
US20060165873A1 (en) * | 2005-01-25 | 2006-07-27 | Micron Technology, Inc. | Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes |
US20060198955A1 (en) * | 2003-08-21 | 2006-09-07 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
US20060205187A1 (en) * | 2003-08-28 | 2006-09-14 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US20060237138A1 (en) * | 2005-04-26 | 2006-10-26 | Micron Technology, Inc. | Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes |
US20060258174A1 (en) * | 2003-08-15 | 2006-11-16 | Hitachi Kokusai Electric Inc. | Substrate treatment apparatus and method of manufacturing semiconductor device |
US20090260763A1 (en) * | 2008-04-22 | 2009-10-22 | Micron Technology, Inc. | Plasma processing with preionized and predissociated tuning gases and associated systems and methods |
US7648578B1 (en) | 2004-06-15 | 2010-01-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, and method for manufacturing semiconductor device |
WO2010048165A2 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials Inc. | Multiple gas feed apparatus and method |
US20110114020A1 (en) * | 2001-07-16 | 2011-05-19 | Gwo-Chuan Tzu | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20130045331A1 (en) * | 2011-08-17 | 2013-02-21 | Asm Genitech Korea Ltd. | Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same |
US20130126486A1 (en) * | 2011-11-22 | 2013-05-23 | Ryan Bise | Multi Zone Gas Injection Upper Electrode System |
US9012294B2 (en) | 2010-07-27 | 2015-04-21 | Panasonic Intellectual Property Management Co., Ltd. | Manufacturing method of non-volatile memory device |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US20150284847A1 (en) * | 2014-04-08 | 2015-10-08 | Samsung Electronics Co., Ltd. | Method of Forming an Epitaxial Layer and Apparatus for Processing a Substrate Used for the Method |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
CN106032571A (en) * | 2015-01-09 | 2016-10-19 | 株式会社日立国际电气 | Substrate Processing Apparatus, Gas Dispersion Unit, Method of Manufacturing Semiconductor Device and program |
US9508530B2 (en) | 2011-11-21 | 2016-11-29 | Lam Research Corporation | Plasma processing chamber with flexible symmetric RF return strap |
CN107502872A (en) * | 2017-08-24 | 2017-12-22 | 新乡市巨能合成材料有限公司 | A kind of metal organic chemical vapor deposition reactor spray equipment |
US20180096819A1 (en) * | 2016-10-04 | 2018-04-05 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10287684B2 (en) * | 2014-07-08 | 2019-05-14 | Kokusai Electric Corporation | Substrate processing apparatus |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US10903052B2 (en) | 2017-02-03 | 2021-01-26 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US11004689B2 (en) | 2018-03-12 | 2021-05-11 | Applied Materials, Inc. | Thermal silicon etch |
TWI728233B (en) * | 2017-03-10 | 2021-05-21 | 日商東京威力科創股份有限公司 | Film forming device |
US11024486B2 (en) | 2013-02-08 | 2021-06-01 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11101136B2 (en) | 2017-08-07 | 2021-08-24 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11158527B2 (en) | 2015-08-06 | 2021-10-26 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US11264213B2 (en) | 2012-09-21 | 2022-03-01 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11476093B2 (en) | 2015-08-27 | 2022-10-18 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US11594400B2 (en) * | 2011-11-23 | 2023-02-28 | Lam Research Corporation | Multi zone gas injection upper electrode system |
WO2023044004A1 (en) * | 2021-09-17 | 2023-03-23 | Cem Corporation | Solid phase peptide synthesis (spps) processes and associated systems |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US11735441B2 (en) | 2016-05-19 | 2023-08-22 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
WO2023177950A1 (en) * | 2022-03-17 | 2023-09-21 | Lam Research Corporation | Dual plenum showerhead with center to edge tunability |
WO2023191875A1 (en) * | 2022-03-30 | 2023-10-05 | Microsoft Technology Licensing, Llc. | Targeted temporal ald |
US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
Families Citing this family (498)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6974766B1 (en) | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US7101795B1 (en) * | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
US6936538B2 (en) | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
WO2002048427A1 (en) * | 2000-12-12 | 2002-06-20 | Tokyo Electron Limited | Thin film forming method and thin film forming device |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
KR100423954B1 (en) * | 2001-03-19 | 2004-03-24 | 디지웨이브 테크놀러지스 주식회사 | Chemical Vapor Deposition Method |
KR100408519B1 (en) * | 2001-05-03 | 2003-12-06 | 삼성전자주식회사 | Reaction chamber for atomic layer deposition |
US6596643B2 (en) | 2001-05-07 | 2003-07-22 | Applied Materials, Inc. | CVD TiSiN barrier for copper integration |
US6849545B2 (en) | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
US20030198754A1 (en) * | 2001-07-16 | 2003-10-23 | Ming Xi | Aluminum oxide chamber and process |
KR100427996B1 (en) * | 2001-07-19 | 2004-04-28 | 주식회사 아이피에스 | Apparatus and method for depositing thin film on wafer |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
TWI224815B (en) * | 2001-08-01 | 2004-12-01 | Tokyo Electron Ltd | Gas processing apparatus and gas processing method |
KR100402332B1 (en) * | 2001-09-07 | 2003-10-22 | 주식회사 시스넥스 | Vertical chemical vapor deposition of heating suscpetor and shower head jet |
US6718126B2 (en) | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US7204886B2 (en) | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
KR100760291B1 (en) * | 2001-11-08 | 2007-09-19 | 에이에스엠지니텍코리아 주식회사 | Method for forming thin film |
KR100450068B1 (en) * | 2001-11-23 | 2004-09-24 | 주성엔지니어링(주) | Multi-sectored flat board type showerhead used in CVD apparatus |
US6773507B2 (en) | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US7081271B2 (en) | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US20030116087A1 (en) * | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
AU2003238853A1 (en) * | 2002-01-25 | 2003-09-02 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6972267B2 (en) | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US7013834B2 (en) * | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
JP4338355B2 (en) * | 2002-05-10 | 2009-10-07 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP4151308B2 (en) * | 2002-05-17 | 2008-09-17 | 東京エレクトロン株式会社 | Gas introduction method for processing equipment |
US7041335B2 (en) | 2002-06-04 | 2006-05-09 | Applied Materials, Inc. | Titanium tantalum nitride silicide layer |
US6896730B2 (en) * | 2002-06-05 | 2005-05-24 | Micron Technology, Inc. | Atomic layer deposition apparatus and methods |
US6838125B2 (en) | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
US7066194B2 (en) | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
US6772072B2 (en) * | 2002-07-22 | 2004-08-03 | Applied Materials, Inc. | Method and apparatus for monitoring solid precursor delivery |
KR100464855B1 (en) * | 2002-07-26 | 2005-01-06 | 삼성전자주식회사 | method for forming a thin film, and method for forming a capacitor and a transistor of a semiconductor device using the same |
US6915592B2 (en) | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
JP4113755B2 (en) * | 2002-10-03 | 2008-07-09 | 東京エレクトロン株式会社 | Processing equipment |
US20040069227A1 (en) | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
WO2004044970A1 (en) * | 2002-11-11 | 2004-05-27 | Hitachi Kokusai Electric Inc. | Substrate processing device |
KR100463633B1 (en) * | 2002-11-12 | 2004-12-29 | 주식회사 아이피에스 | Method for depositing thin film on wafer using Hafnium compound |
US20040142558A1 (en) * | 2002-12-05 | 2004-07-22 | Granneman Ernst H. A. | Apparatus and method for atomic layer deposition on substrates |
US20040118519A1 (en) * | 2002-12-20 | 2004-06-24 | Applied Materials, Inc. | Blocker plate bypass design to improve clean rate at the edge of the chamber |
WO2004064147A2 (en) | 2003-01-07 | 2004-07-29 | Applied Materials, Inc. | Integration of ald/cvd barriers with porous low k materials |
US6994319B2 (en) * | 2003-01-29 | 2006-02-07 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
US6868859B2 (en) * | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
US20040177813A1 (en) | 2003-03-12 | 2004-09-16 | Applied Materials, Inc. | Substrate support lift mechanism |
KR100520900B1 (en) * | 2003-03-13 | 2005-10-12 | 주식회사 아이피에스 | Method for depositing a ALD thin film on wafer |
US7342984B1 (en) | 2003-04-03 | 2008-03-11 | Zilog, Inc. | Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character |
US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7537662B2 (en) * | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
JP2007523994A (en) | 2003-06-18 | 2007-08-23 | アプライド マテリアルズ インコーポレイテッド | Atomic layer deposition of barrier materials |
KR100626366B1 (en) * | 2003-07-18 | 2006-09-20 | 삼성전자주식회사 | Vapor Deposition System |
KR100527048B1 (en) * | 2003-08-29 | 2005-11-09 | 주식회사 아이피에스 | Method for depositing thin film on wafer |
US20050067103A1 (en) | 2003-09-26 | 2005-03-31 | Applied Materials, Inc. | Interferometer endpoint monitoring device |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US7622005B2 (en) * | 2004-05-26 | 2009-11-24 | Applied Materials, Inc. | Uniformity control for low flow process and chamber to chamber matching |
US7572337B2 (en) * | 2004-05-26 | 2009-08-11 | Applied Materials, Inc. | Blocker plate bypass to distribute gases in a chemical vapor deposition system |
DE602005016933D1 (en) * | 2004-06-28 | 2009-11-12 | Cambridge Nanotech Inc | ATOMIC SEPARATION SYSTEM AND METHOD |
US7429402B2 (en) | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
US7351285B2 (en) * | 2005-03-29 | 2008-04-01 | Tokyo Electron Limited | Method and system for forming a variable thickness seed layer |
KR100731164B1 (en) * | 2005-05-19 | 2007-06-20 | 주식회사 피에조닉스 | Apparatus of chemical vapor deposition with a shower head and method therof |
JP4794942B2 (en) * | 2005-08-03 | 2011-10-19 | 古河機械金属株式会社 | Atomic layer deposition equipment |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US7464917B2 (en) | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
KR101019293B1 (en) | 2005-11-04 | 2011-03-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and process for plasma-enhanced atomic layer deposition |
US7658802B2 (en) * | 2005-11-22 | 2010-02-09 | Applied Materials, Inc. | Apparatus and a method for cleaning a dielectric film |
JP4890012B2 (en) * | 2005-12-01 | 2012-03-07 | 株式会社フジクラ | Plasma CVD equipment |
US20070264427A1 (en) * | 2005-12-21 | 2007-11-15 | Asm Japan K.K. | Thin film formation by atomic layer growth and chemical vapor deposition |
JP2007191792A (en) * | 2006-01-19 | 2007-08-02 | Atto Co Ltd | Gas separation type showerhead |
US20070234956A1 (en) * | 2006-04-05 | 2007-10-11 | Dalton Jeremie J | Method and apparatus for providing uniform gas delivery to a reactor |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
KR100849929B1 (en) * | 2006-09-16 | 2008-08-26 | 주식회사 피에조닉스 | Apparatus of chemical vapor deposition with a showerhead regulating the injection velocity of reactive gases positively and a method thereof |
US7605078B2 (en) * | 2006-09-29 | 2009-10-20 | Tokyo Electron Limited | Integration of a variable thickness copper seed layer in copper metallization |
US7521379B2 (en) | 2006-10-09 | 2009-04-21 | Applied Materials, Inc. | Deposition and densification process for titanium nitride barrier layers |
US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
US8158526B2 (en) | 2006-10-30 | 2012-04-17 | Applied Materials, Inc. | Endpoint detection for photomask etching |
US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
KR101355638B1 (en) * | 2006-11-09 | 2014-01-29 | 한국에이에스엠지니텍 주식회사 | Atomic Layer Deposition Apparatus |
US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
US20080206987A1 (en) | 2007-01-29 | 2008-08-28 | Gelatos Avgerinos V | Process for tungsten nitride deposition by a temperature controlled lid assembly |
JP4981485B2 (en) * | 2007-03-05 | 2012-07-18 | 株式会社ニューフレアテクノロジー | Vapor phase growth method and vapor phase growth apparatus |
JP5034594B2 (en) * | 2007-03-27 | 2012-09-26 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, and storage medium |
JP5444599B2 (en) * | 2007-09-28 | 2014-03-19 | 東京エレクトロン株式会社 | Gas supply apparatus and film forming apparatus |
US20090095221A1 (en) * | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
US7767572B2 (en) * | 2008-02-21 | 2010-08-03 | Applied Materials, Inc. | Methods of forming a barrier layer in an interconnect structure |
US20090211707A1 (en) * | 2008-02-22 | 2009-08-27 | Hermes Systems Inc. | Apparatus for gas distribution and its applications |
US7618893B2 (en) * | 2008-03-04 | 2009-11-17 | Applied Materials, Inc. | Methods of forming a layer for barrier applications in an interconnect structure |
JP5108565B2 (en) * | 2008-03-07 | 2012-12-26 | 株式会社リコー | Droplet discharge head, method for manufacturing the same, and image recording apparatus including the droplet discharge head |
US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
US8491967B2 (en) | 2008-09-08 | 2013-07-23 | Applied Materials, Inc. | In-situ chamber treatment and deposition process |
US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
TWI437622B (en) * | 2008-11-26 | 2014-05-11 | Ind Tech Res Inst | Gas shower module |
JP5662334B2 (en) * | 2008-12-04 | 2015-01-28 | ビーコ・インストゥルメンツ・インコーポレイテッド | Inlet element and chemical vapor deposition method for chemical vapor deposition |
US20100151676A1 (en) * | 2008-12-16 | 2010-06-17 | Applied Materials, Inc. | Densification process for titanium nitride layer for submicron applications |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
KR20110004081A (en) * | 2009-07-07 | 2011-01-13 | 삼성모바일디스플레이주식회사 | Canister for deposition apparatus, deposition apparatus using the same and method of depositing |
US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8883270B2 (en) | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
CN102471886A (en) * | 2009-08-28 | 2012-05-23 | 京瓷株式会社 | Apparatus for forming deposited film and method for forming deposited film |
TWI385272B (en) * | 2009-09-25 | 2013-02-11 | Ind Tech Res Inst | Gas distribution plate and apparatus using the same |
TWI369251B (en) * | 2010-02-01 | 2012-08-01 | Ind Tech Res Inst | Gas distribution module and gas distribution scanning apparatus using the same |
US8778204B2 (en) | 2010-10-29 | 2014-07-15 | Applied Materials, Inc. | Methods for reducing photoresist interference when monitoring a target layer in a plasma process |
WO2012092064A1 (en) | 2010-12-30 | 2012-07-05 | Veeco Instruments Inc. | Wafer processing with carrier extension |
JP5986591B2 (en) | 2011-03-04 | 2016-09-06 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Methods for cleaning contacts |
US8912096B2 (en) | 2011-04-28 | 2014-12-16 | Applied Materials, Inc. | Methods for precleaning a substrate prior to metal silicide fabrication process |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9218961B2 (en) | 2011-09-19 | 2015-12-22 | Applied Materials, Inc. | Methods of forming a metal containing layer on a substrate with high uniformity and good profile control |
US8961804B2 (en) | 2011-10-25 | 2015-02-24 | Applied Materials, Inc. | Etch rate detection for photomask etching |
US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US8808559B2 (en) | 2011-11-22 | 2014-08-19 | Applied Materials, Inc. | Etch rate detection for reflective multi-material layers etching |
US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
JP6038618B2 (en) * | 2011-12-15 | 2016-12-07 | 株式会社ニューフレアテクノロジー | Film forming apparatus and film forming method |
US8927423B2 (en) | 2011-12-16 | 2015-01-06 | Applied Materials, Inc. | Methods for annealing a contact metal layer to form a metal silicidation layer |
US8900469B2 (en) | 2011-12-19 | 2014-12-02 | Applied Materials, Inc. | Etch rate detection for anti-reflective coating layer and absorber layer etching |
US8586479B2 (en) | 2012-01-23 | 2013-11-19 | Applied Materials, Inc. | Methods for forming a contact metal layer in semiconductor devices |
US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
KR101434217B1 (en) * | 2012-03-19 | 2014-08-29 | (주)레벨컴퍼니 | Contest system and method using communication network |
US9330939B2 (en) | 2012-03-28 | 2016-05-03 | Applied Materials, Inc. | Method of enabling seamless cobalt gap-fill |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
US9029253B2 (en) | 2012-05-02 | 2015-05-12 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US9805939B2 (en) | 2012-10-12 | 2017-10-31 | Applied Materials, Inc. | Dual endpoint detection for advanced phase shift and binary photomasks |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
KR101420333B1 (en) * | 2012-11-19 | 2014-07-16 | 삼성디스플레이 주식회사 | Vapor deposition apparatus, method for forming thin film using the same and method for manufacturing organic light emitting display apparatus |
US8778574B2 (en) | 2012-11-30 | 2014-07-15 | Applied Materials, Inc. | Method for etching EUV material layers utilized to form a photomask |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US9399228B2 (en) * | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9123510B2 (en) * | 2013-06-12 | 2015-09-01 | ASM IP Holding, B.V. | Method for controlling in-plane uniformity of substrate processed by plasma-assisted process |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US9543163B2 (en) | 2013-08-20 | 2017-01-10 | Applied Materials, Inc. | Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process |
JP2015069987A (en) * | 2013-09-26 | 2015-04-13 | 株式会社日立国際電気 | Substrate processing device, method of manufacturing semiconductor device, and substrate processing method |
TWI633604B (en) | 2013-09-27 | 2018-08-21 | 美商應用材料股份有限公司 | Method of enabling seamless cobalt gap-fill |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US10351955B2 (en) | 2013-12-18 | 2019-07-16 | Lam Research Corporation | Semiconductor substrate processing apparatus including uniformity baffles |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9508561B2 (en) | 2014-03-11 | 2016-11-29 | Applied Materials, Inc. | Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9528185B2 (en) | 2014-08-22 | 2016-12-27 | Applied Materials, Inc. | Plasma uniformity control by arrays of unit cell plasmas |
KR102017962B1 (en) * | 2014-09-17 | 2019-09-03 | 도쿄엘렉트론가부시키가이샤 | Shower head and deposition system |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
KR102300403B1 (en) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing thin film |
JP5968996B2 (en) * | 2014-12-18 | 2016-08-10 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and program |
KR102263121B1 (en) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor device and manufacuring method thereof |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US9758868B1 (en) | 2016-03-10 | 2017-09-12 | Lam Research Corporation | Plasma suppression behind a showerhead through the use of increased pressure |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (en) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming metal interconnection and method of fabricating semiconductor device using the same |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (en) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR102218855B1 (en) * | 2017-07-12 | 2021-02-23 | 주식회사 엘지화학 | Apparatus and method for coating surface of porous substrate |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11004722B2 (en) | 2017-07-20 | 2021-05-11 | Applied Materials, Inc. | Lift pin assembly |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
JP6947914B2 (en) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Annealing chamber under high pressure and high temperature |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102585074B1 (en) | 2017-11-11 | 2023-10-04 | 마이크로머티어리얼즈 엘엘씨 | Gas delivery system for high pressure processing chamber |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
WO2019099255A2 (en) | 2017-11-17 | 2019-05-23 | Applied Materials, Inc. | Condenser system for high pressure processing system |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
KR102597978B1 (en) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | Storage device for storing wafer cassettes for use with batch furnaces |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
KR102516778B1 (en) * | 2018-02-08 | 2023-04-03 | 주성엔지니어링(주) | Apparatus and method for cleaning chamber |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN111699278B (en) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | Method for depositing ruthenium-containing films on substrates by cyclical deposition processes |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
SG11202008256WA (en) | 2018-03-09 | 2020-09-29 | Applied Materials Inc | High pressure annealing process for metal containing materials |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
TW202344708A (en) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TWI816783B (en) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TW202013553A (en) | 2018-06-04 | 2020-04-01 | 荷蘭商Asm 智慧財產控股公司 | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
JP2021529254A (en) | 2018-06-27 | 2021-10-28 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
KR20210027265A (en) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | Periodic deposition method for forming metal-containing material and film and structure comprising metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (en) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US11535936B2 (en) * | 2018-07-23 | 2022-12-27 | Lam Research Corporation | Dual gas feed showerhead for deposition |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (en) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming device structure using selective deposition of gallium nitride, and system for the same |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
JP2020136678A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for filing concave part formed inside front surface of base material, and device |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
JP2020136677A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic accumulation method for filing concave part formed inside front surface of base material, and device |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
KR20200108248A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system including a gas detector |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (en) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | Method of forming topologically controlled amorphous carbon polymer films |
CN112309843A (en) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | Selective deposition method for achieving high dopant doping |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (en) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Liquid level sensor for a chemical source vessel |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
CN112992667A (en) | 2019-12-17 | 2021-06-18 | Asm Ip私人控股有限公司 | Method of forming vanadium nitride layer and structure including vanadium nitride layer |
KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
KR20210117157A (en) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for Fabricating Layer Structure Having Target Topological Profile |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
TW202219628A (en) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
TW202217037A (en) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
TW202235675A (en) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | Injector, and substrate processing apparatus |
CN114639631A (en) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | Fixing device for measuring jumping and swinging |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
KR20240031783A (en) | 2022-09-01 | 2024-03-08 | 주식회사 테스 | Method of dry etching |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US5453124A (en) * | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
US5500256A (en) * | 1994-08-16 | 1996-03-19 | Fujitsu Limited | Dry process apparatus using plural kinds of gas |
US5532190A (en) * | 1994-05-26 | 1996-07-02 | U.S. Philips Corporation | Plasma treatment method in electronic device manufacture |
US5744049A (en) * | 1994-07-18 | 1998-04-28 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same |
US6017395A (en) * | 1996-03-13 | 2000-01-25 | Nec Corporation | Gas pressure regulation in vapor deposition |
US6059885A (en) * | 1996-12-19 | 2000-05-09 | Toshiba Ceramics Co., Ltd. | Vapor deposition apparatus and method for forming thin film |
US6132512A (en) * | 1997-01-08 | 2000-10-17 | Ebara Corporation | Vapor-phase film growth apparatus and gas ejection head |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61120416A (en) * | 1984-11-16 | 1986-06-07 | Fujitsu Ltd | Chemical vapor deposition equipment |
US4990374A (en) * | 1989-11-28 | 1991-02-05 | Cvd Incorporated | Selective area chemical vapor deposition |
US5316793A (en) * | 1992-07-27 | 1994-05-31 | Texas Instruments Incorporated | Directed effusive beam atomic layer epitaxy system and method |
JP3360098B2 (en) | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | Shower head structure of processing equipment |
KR100190909B1 (en) * | 1995-07-01 | 1999-06-01 | 윤덕용 | Shower head for cvd reactor |
US5772771A (en) * | 1995-12-13 | 1998-06-30 | Applied Materials, Inc. | Deposition chamber for improved deposition thickness uniformity |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
US5684309A (en) * | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
US5781693A (en) * | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
JPH10135315A (en) | 1996-10-29 | 1998-05-22 | Tokyo Electron Ltd | Sample holder temp. controller and testing apparatus |
KR19990020125A (en) | 1997-08-30 | 1999-03-25 | 이형도 | Wafer chucking device for magnetoresistive head manufacturing |
US5972430A (en) * | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
KR100263889B1 (en) | 1997-12-30 | 2000-08-16 | 윤종용 | A cooling apparatus for substrate of optical disk |
KR100978372B1 (en) | 2009-06-19 | 2010-08-30 | (주)위드솔루션 | Home security system using power line communication |
-
1999
- 1999-01-18 KR KR1019990001279A patent/KR100331544B1/en not_active IP Right Cessation
- 1999-12-20 US US09/467,313 patent/US6478872B1/en not_active Expired - Lifetime
-
2000
- 2000-01-18 JP JP2000008699A patent/JP2000212752A/en active Pending
-
2002
- 2002-08-07 US US10/213,078 patent/US20030000473A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US5453124A (en) * | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
US5532190A (en) * | 1994-05-26 | 1996-07-02 | U.S. Philips Corporation | Plasma treatment method in electronic device manufacture |
US5744049A (en) * | 1994-07-18 | 1998-04-28 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same |
US5500256A (en) * | 1994-08-16 | 1996-03-19 | Fujitsu Limited | Dry process apparatus using plural kinds of gas |
US6017395A (en) * | 1996-03-13 | 2000-01-25 | Nec Corporation | Gas pressure regulation in vapor deposition |
US6059885A (en) * | 1996-12-19 | 2000-05-09 | Toshiba Ceramics Co., Ltd. | Vapor deposition apparatus and method for forming thin film |
US6132512A (en) * | 1997-01-08 | 2000-10-17 | Ebara Corporation | Vapor-phase film growth apparatus and gas ejection head |
Cited By (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6866882B1 (en) | 1999-03-12 | 2005-03-15 | Tokyo Electron Limited | Method of forming a thin film |
US20020166507A1 (en) * | 1999-03-12 | 2002-11-14 | Tokyo Electron Limited | Thin film forming apparatus |
US6800139B1 (en) * | 1999-08-31 | 2004-10-05 | Tokyo Electron Limited | Film deposition apparatus and method |
US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20110114020A1 (en) * | 2001-07-16 | 2011-05-19 | Gwo-Chuan Tzu | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20040049908A1 (en) * | 2002-01-15 | 2004-03-18 | Quallion Llc | Electric storage battery construction and method of manufacture |
US20050022739A1 (en) * | 2002-07-08 | 2005-02-03 | Carpenter Craig M. | Apparatus and method for depositing materials onto microelectronic workpieces |
US20040149211A1 (en) * | 2002-07-18 | 2004-08-05 | Jae-Young Ahn | Systems including heated shower heads for thin film deposition and related methods |
US7347900B2 (en) * | 2002-12-17 | 2008-03-25 | Dongbu Electronics Co., Ltd. | Chemical vapor deposition apparatus and method |
US20040123806A1 (en) * | 2002-12-17 | 2004-07-01 | Anam Semiconductor Inc. | Chemical vapor deposition apparatus and method |
US20040173150A1 (en) * | 2003-03-03 | 2004-09-09 | Derderian Garo J. | Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces |
US6818249B2 (en) | 2003-03-03 | 2004-11-16 | Micron Technology, Inc. | Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces |
US20050045100A1 (en) * | 2003-03-03 | 2005-03-03 | Derderian Garo J. | Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces |
US20040226507A1 (en) * | 2003-04-24 | 2004-11-18 | Carpenter Craig M. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
US20090186467A1 (en) * | 2003-08-15 | 2009-07-23 | Masanori Sakai | Substrate Processing Apparatus and Producing Method of Semiconductor Device |
US8598047B2 (en) | 2003-08-15 | 2013-12-03 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and producing method of semiconductor device |
US20060258174A1 (en) * | 2003-08-15 | 2006-11-16 | Hitachi Kokusai Electric Inc. | Substrate treatment apparatus and method of manufacturing semiconductor device |
US20060198955A1 (en) * | 2003-08-21 | 2006-09-07 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
US20060205187A1 (en) * | 2003-08-28 | 2006-09-14 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US20060115957A1 (en) * | 2003-09-17 | 2006-06-01 | Cem Basceri | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
US20050061243A1 (en) * | 2003-09-18 | 2005-03-24 | Demetrius Sarigiannis | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
US20050087130A1 (en) * | 2003-10-09 | 2005-04-28 | Derderian Garo J. | Apparatus and methods for plasma vapor deposition processes |
US20050087302A1 (en) * | 2003-10-10 | 2005-04-28 | Mardian Allen P. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US20050081786A1 (en) * | 2003-10-15 | 2005-04-21 | Kubista David J. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US20050092248A1 (en) * | 2003-10-31 | 2005-05-05 | Sysnex Co., Ltd. | Chemical vapor deposition unit |
US20060204649A1 (en) * | 2003-12-10 | 2006-09-14 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition |
US8518184B2 (en) | 2003-12-10 | 2013-08-27 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition |
US20050126489A1 (en) * | 2003-12-10 | 2005-06-16 | Beaman Kevin L. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7771537B2 (en) | 2003-12-10 | 2010-08-10 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition |
US8384192B2 (en) | 2004-01-28 | 2013-02-26 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US20050164466A1 (en) * | 2004-01-28 | 2005-07-28 | Zheng Lingyi A. | Methods for forming small-scale capacitor structures |
US20050249873A1 (en) * | 2004-05-05 | 2005-11-10 | Demetrius Sarigiannis | Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices |
US9023436B2 (en) | 2004-05-06 | 2015-05-05 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US20050249887A1 (en) * | 2004-05-06 | 2005-11-10 | Dando Ross S | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US20050268856A1 (en) * | 2004-06-02 | 2005-12-08 | Miller Matthew W | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US7648578B1 (en) | 2004-06-15 | 2010-01-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, and method for manufacturing semiconductor device |
US20060165873A1 (en) * | 2005-01-25 | 2006-07-27 | Micron Technology, Inc. | Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes |
US20060237138A1 (en) * | 2005-04-26 | 2006-10-26 | Micron Technology, Inc. | Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes |
US9090460B2 (en) | 2008-04-22 | 2015-07-28 | Micron Technology, Inc. | Plasma processing with preionized and predissociated tuning gases and associated systems and methods |
US20090260763A1 (en) * | 2008-04-22 | 2009-10-22 | Micron Technology, Inc. | Plasma processing with preionized and predissociated tuning gases and associated systems and methods |
US8721836B2 (en) * | 2008-04-22 | 2014-05-13 | Micron Technology, Inc. | Plasma processing with preionized and predissociated tuning gases and associated systems and methods |
WO2010048165A3 (en) * | 2008-10-24 | 2010-08-12 | Applied Materials Inc. | Multiple gas feed apparatus and method |
US20100104754A1 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials, Inc. | Multiple gas feed apparatus and method |
WO2010048165A2 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials Inc. | Multiple gas feed apparatus and method |
US9012294B2 (en) | 2010-07-27 | 2015-04-21 | Panasonic Intellectual Property Management Co., Ltd. | Manufacturing method of non-volatile memory device |
US9062375B2 (en) * | 2011-08-17 | 2015-06-23 | Asm Genitech Korea Ltd. | Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same |
US20130045331A1 (en) * | 2011-08-17 | 2013-02-21 | Asm Genitech Korea Ltd. | Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US9508530B2 (en) | 2011-11-21 | 2016-11-29 | Lam Research Corporation | Plasma processing chamber with flexible symmetric RF return strap |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US20130126486A1 (en) * | 2011-11-22 | 2013-05-23 | Ryan Bise | Multi Zone Gas Injection Upper Electrode System |
US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US11127571B2 (en) | 2011-11-22 | 2021-09-21 | Lam Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US10622195B2 (en) * | 2011-11-22 | 2020-04-14 | Lam Research Corporation | Multi zone gas injection upper electrode system |
US11594400B2 (en) * | 2011-11-23 | 2023-02-28 | Lam Research Corporation | Multi zone gas injection upper electrode system |
US11264213B2 (en) | 2012-09-21 | 2022-03-01 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US11024486B2 (en) | 2013-02-08 | 2021-06-01 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US20150284847A1 (en) * | 2014-04-08 | 2015-10-08 | Samsung Electronics Co., Ltd. | Method of Forming an Epitaxial Layer and Apparatus for Processing a Substrate Used for the Method |
US10287684B2 (en) * | 2014-07-08 | 2019-05-14 | Kokusai Electric Corporation | Substrate processing apparatus |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
CN106032571A (en) * | 2015-01-09 | 2016-10-19 | 株式会社日立国际电气 | Substrate Processing Apparatus, Gas Dispersion Unit, Method of Manufacturing Semiconductor Device and program |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US11158527B2 (en) | 2015-08-06 | 2021-10-26 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US11476093B2 (en) | 2015-08-27 | 2022-10-18 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US11735441B2 (en) | 2016-05-19 | 2023-08-22 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US20180096819A1 (en) * | 2016-10-04 | 2018-04-05 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US11049698B2 (en) * | 2016-10-04 | 2021-06-29 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10903052B2 (en) | 2017-02-03 | 2021-01-26 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
TWI728233B (en) * | 2017-03-10 | 2021-05-21 | 日商東京威力科創股份有限公司 | Film forming device |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US11361939B2 (en) | 2017-05-17 | 2022-06-14 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11101136B2 (en) | 2017-08-07 | 2021-08-24 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
CN107502872A (en) * | 2017-08-24 | 2017-12-22 | 新乡市巨能合成材料有限公司 | A kind of metal organic chemical vapor deposition reactor spray equipment |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10861676B2 (en) | 2018-01-08 | 2020-12-08 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US11004689B2 (en) | 2018-03-12 | 2021-05-11 | Applied Materials, Inc. | Thermal silicon etch |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
WO2023044004A1 (en) * | 2021-09-17 | 2023-03-23 | Cem Corporation | Solid phase peptide synthesis (spps) processes and associated systems |
WO2023177950A1 (en) * | 2022-03-17 | 2023-09-21 | Lam Research Corporation | Dual plenum showerhead with center to edge tunability |
WO2023191875A1 (en) * | 2022-03-30 | 2023-10-05 | Microsoft Technology Licensing, Llc. | Targeted temporal ald |
Also Published As
Publication number | Publication date |
---|---|
US6478872B1 (en) | 2002-11-12 |
KR20000051046A (en) | 2000-08-16 |
JP2000212752A (en) | 2000-08-02 |
KR100331544B1 (en) | 2002-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6478872B1 (en) | Method of delivering gas into reaction chamber and shower head used to deliver gas | |
US6573184B2 (en) | Apparatus and method for depositing thin film on wafer using atomic layer deposition | |
US10364509B2 (en) | Alkyl push flow for vertical flow rotating disk reactors | |
US6796316B2 (en) | Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method | |
US6197683B1 (en) | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same | |
US9583385B2 (en) | Method for producing ultra-thin tungsten layers with improved step coverage | |
US6503330B1 (en) | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition | |
US9359673B2 (en) | Apparatus and method for atomic layer deposition | |
US7732350B2 (en) | Chemical vapor deposition of TiN films in a batch reactor | |
US20030017268A1 (en) | .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity | |
US20070151514A1 (en) | Apparatus and method for hybrid chemical processing | |
US11830731B2 (en) | Semiconductor deposition reactor manifolds | |
US7771535B2 (en) | Semiconductor manufacturing apparatus | |
KR20060020194A (en) | Ald thin film deposition apparatus and method for depositing thin film | |
KR101554334B1 (en) | Shower-head assembly and thin film deposition apparatus and method having the same | |
KR20070082245A (en) | Method of depositing ru film using peald and dense ru film | |
US8039054B2 (en) | Layer deposition methods | |
US20040216670A1 (en) | Process for the ALD coating of substrates and apparatus suitable for carrying out the process | |
KR100972111B1 (en) | Batch type semiconductor manufacturing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |