US20060185577A1 - Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit - Google Patents
Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit Download PDFInfo
- Publication number
- US20060185577A1 US20060185577A1 US10/566,722 US56672204A US2006185577A1 US 20060185577 A1 US20060185577 A1 US 20060185577A1 US 56672204 A US56672204 A US 56672204A US 2006185577 A1 US2006185577 A1 US 2006185577A1
- Authority
- US
- United States
- Prior art keywords
- far ultraviolet
- light emitting
- ultraviolet light
- boron nitride
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 130
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 69
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims description 33
- 239000007787 solid Substances 0.000 title description 3
- 238000010894 electron beam technology Methods 0.000 claims abstract description 58
- 239000002904 solvent Substances 0.000 claims abstract description 29
- 238000002844 melting Methods 0.000 claims abstract description 3
- 230000008018 melting Effects 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 32
- 239000010432 diamond Substances 0.000 claims description 27
- 229910003460 diamond Inorganic materials 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 150000004767 nitrides Chemical group 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 10
- 239000002994 raw material Substances 0.000 abstract description 10
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 238000003786 synthesis reaction Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000004020 luminiscence type Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 238000001953 recrystallisation Methods 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 10
- 239000002775 capsule Substances 0.000 description 9
- 230000005284 excitation Effects 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 8
- 229910052906 cristobalite Inorganic materials 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052682 stishovite Inorganic materials 0.000 description 8
- 229910052905 tridymite Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 5
- 230000006399 behavior Effects 0.000 description 5
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910025794 LaB6 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000002194 synthesizing effect Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000010574 gas phase reaction Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- 238000004659 sterilization and disinfection Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical class [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000007018 DNA scission Effects 0.000 description 1
- 102000016751 Fringe-like Human genes 0.000 description 1
- 108050006300 Fringe-like Proteins 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- -1 sintered body Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/065—Presses for the formation of diamonds or boronitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/63—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing boron
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/069—Recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/588,462 US8258603B2 (en) | 2003-11-18 | 2009-10-16 | Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal |
| US13/561,695 US8529696B2 (en) | 2003-11-18 | 2012-07-30 | Method for producing hexagonal boron nitride single crystals |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003388467A JP4340753B2 (ja) | 2003-11-18 | 2003-11-18 | 高輝度紫外線発光六方晶窒化ホウ素単結晶とその製造方法及び高輝度紫外線発光素子 |
| JP2003-388467 | 2003-11-18 | ||
| JP2004-035501 | 2004-02-12 | ||
| JP2004035501A JP3903185B2 (ja) | 2004-02-12 | 2004-02-12 | 深紫外線固体発光素子 |
| JP2004260480A JP2006079873A (ja) | 2004-09-08 | 2004-09-08 | 深紫外線固体発光装置 |
| JP2004-260480 | 2004-09-08 | ||
| PCT/JP2004/017434 WO2005049898A1 (ja) | 2003-11-18 | 2004-11-17 | 遠紫外高輝度発光する高純度六方晶窒化ホウ素単結晶とその製造方法ならびに前記単結晶からなる遠紫外高輝度発光素子とこの素子を使用した固体レ－ザ、および固体発光装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2004/017434 A-371-Of-International WO2005049898A1 (ja) | 2003-11-18 | 2004-11-17 | 遠紫外高輝度発光する高純度六方晶窒化ホウ素単結晶とその製造方法ならびに前記単結晶からなる遠紫外高輝度発光素子とこの素子を使用した固体レ－ザ、および固体発光装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/588,462 Division US8258603B2 (en) | 2003-11-18 | 2009-10-16 | Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20060185577A1 true US20060185577A1 (en) | 2006-08-24 |
Family
ID=34623569
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/566,722 Abandoned US20060185577A1 (en) | 2003-11-18 | 2004-11-17 | Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit |
| US12/588,462 Expired - Fee Related US8258603B2 (en) | 2003-11-18 | 2009-10-16 | Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal |
| US13/561,695 Expired - Fee Related US8529696B2 (en) | 2003-11-18 | 2012-07-30 | Method for producing hexagonal boron nitride single crystals |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/588,462 Expired - Fee Related US8258603B2 (en) | 2003-11-18 | 2009-10-16 | Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal |
| US13/561,695 Expired - Fee Related US8529696B2 (en) | 2003-11-18 | 2012-07-30 | Method for producing hexagonal boron nitride single crystals |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US20060185577A1 (ja) |
| EP (1) | EP1686202B1 (ja) |
| KR (2) | KR101200722B1 (ja) |
| DE (1) | DE602004031971D1 (ja) |
| WO (1) | WO2005049898A1 (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080011224A1 (en) * | 2005-02-16 | 2008-01-17 | Ngk Insulators, Ltd. | Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal |
| US20090078851A1 (en) * | 2005-07-01 | 2009-03-26 | National Institute For Materials Science | Far Ultraviolet With High Luminance Emitting High-Purity Hexagonal Boron Nitride Monocrystalline Powder And Method Of Manufacturing The Same |
| US8923098B2 (en) * | 2013-02-27 | 2014-12-30 | Headway Technologies, Inc. | Tilted structures to reduce reflection in laser-assisted TAMR |
| CN111710752A (zh) * | 2020-06-24 | 2020-09-25 | 吉林大学 | 基于立方氮化硼厚膜的msm型深紫外光电探测器及制备方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013013418A1 (zh) * | 2011-07-22 | 2013-01-31 | 中国科学院上海微系统与信息技术研究所 | 一种具有单原子层台阶的六角氮化硼基底及其制备方法与应用 |
| WO2014057982A1 (ja) * | 2012-10-12 | 2014-04-17 | 独立行政法人物質・材料研究機構 | 六方晶窒化タングステンの合成方法及び六方晶窒化タングステン |
| KR20150026364A (ko) * | 2013-09-02 | 2015-03-11 | 엘지전자 주식회사 | 질화 붕소계 형광체, 그 제조 방법 및 이를 이용한 발광 소자 패키지 |
| US11964062B2 (en) | 2019-09-03 | 2024-04-23 | Luxhygenix Inc. | Antimicrobial device using ultraviolet light |
| US11439840B2 (en) | 2021-01-21 | 2022-09-13 | Joseph McQuirter, SR. | Far ultraviolet light application device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3141802A (en) * | 1961-05-19 | 1964-07-21 | Gen Electric | Semiconducting cubic boron nitride and methods for preparing the same |
| US3212851A (en) * | 1962-05-02 | 1965-10-19 | Gen Electric | Boron nitride having a new structure |
| US3212852A (en) * | 1962-07-30 | 1965-10-19 | Gen Electric | Method for converting hexagonal boron nitride to a new structure |
| US3233988A (en) * | 1964-05-19 | 1966-02-08 | Gen Electric | Cubic boron nitride compact and method for its production |
| US3772428A (en) * | 1971-01-28 | 1973-11-13 | Gen Electric | Continuous growth of cubic boron nitride |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4045186A (en) * | 1973-09-06 | 1977-08-30 | General Electric Company | Method for producing large soft hexagonal boron nitride particles |
| US4409193A (en) * | 1981-03-06 | 1983-10-11 | National Institute For Researches In Inorganic Materials | Process for preparing cubic boron nitride |
| JPH06219899A (ja) * | 1992-08-21 | 1994-08-09 | Ube Ind Ltd | 熱分解窒化ホウ素膜及び被覆物品 |
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- 2004-11-17 EP EP04799790A patent/EP1686202B1/en not_active Expired - Fee Related
- 2004-11-17 US US10/566,722 patent/US20060185577A1/en not_active Abandoned
- 2004-11-17 KR KR1020117029885A patent/KR101200722B1/ko not_active IP Right Cessation
- 2004-11-17 WO PCT/JP2004/017434 patent/WO2005049898A1/ja not_active Application Discontinuation
- 2004-11-17 DE DE602004031971T patent/DE602004031971D1/de active Active
- 2004-11-17 KR KR1020067009732A patent/KR101128935B1/ko not_active IP Right Cessation
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2009
- 2009-10-16 US US12/588,462 patent/US8258603B2/en not_active Expired - Fee Related
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080011224A1 (en) * | 2005-02-16 | 2008-01-17 | Ngk Insulators, Ltd. | Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal |
| US7815733B2 (en) * | 2005-02-16 | 2010-10-19 | Ngk Insulators, Ltd. | Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal |
| US20090078851A1 (en) * | 2005-07-01 | 2009-03-26 | National Institute For Materials Science | Far Ultraviolet With High Luminance Emitting High-Purity Hexagonal Boron Nitride Monocrystalline Powder And Method Of Manufacturing The Same |
| US7863554B2 (en) * | 2005-07-01 | 2011-01-04 | National Institute For Materials Science | Far ultraviolet with high luminance emitting high-purity hexagonal boron nitride monocrystalline powder and method of manufacturing the same |
| US8923098B2 (en) * | 2013-02-27 | 2014-12-30 | Headway Technologies, Inc. | Tilted structures to reduce reflection in laser-assisted TAMR |
| US20150109893A1 (en) * | 2013-02-27 | 2015-04-23 | Headway Technologies, Inc. | Tilted Structures to Reduce Reflection in Laser-Assisted TAMR |
| US9245554B2 (en) * | 2013-02-27 | 2016-01-26 | Headway Technologies, Inc. | Tilted structures to reduce reflection in laser-assisted TAMR |
| CN111710752A (zh) * | 2020-06-24 | 2020-09-25 | 吉林大学 | 基于立方氮化硼厚膜的msm型深紫外光电探测器及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100091803A1 (en) | 2010-04-15 |
| US8258603B2 (en) | 2012-09-04 |
| US20120291695A1 (en) | 2012-11-22 |
| KR20070001878A (ko) | 2007-01-04 |
| DE602004031971D1 (de) | 2011-05-05 |
| EP1686202A1 (en) | 2006-08-02 |
| KR101200722B1 (ko) | 2012-11-13 |
| US8529696B2 (en) | 2013-09-10 |
| EP1686202B1 (en) | 2011-03-23 |
| KR20120000586A (ko) | 2012-01-02 |
| EP1686202A4 (en) | 2009-06-10 |
| KR101128935B1 (ko) | 2012-03-27 |
| WO2005049898A1 (ja) | 2005-06-02 |
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