US20060165978A1 - Insulating sheet and method for producing it, and power module comprising the insulating sheet - Google Patents

Insulating sheet and method for producing it, and power module comprising the insulating sheet Download PDF

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Publication number
US20060165978A1
US20060165978A1 US11/340,867 US34086706A US2006165978A1 US 20060165978 A1 US20060165978 A1 US 20060165978A1 US 34086706 A US34086706 A US 34086706A US 2006165978 A1 US2006165978 A1 US 2006165978A1
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United States
Prior art keywords
insulating sheet
sheet
heat conductivity
adhesive
region
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Abandoned
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US11/340,867
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English (en)
Inventor
Hiromi Ito
Naoshi Yamada
Kei Yamamoto
Hirofumi Fujioka
Takumi Kikuchi
Osamu Yashiro
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
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Assigned to MITSUBISHI DENKI KABUSHIKI KAISHA reassignment MITSUBISHI DENKI KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YAMADA, NAOSHI, YASHIRO, OSAMU, KIKUCHI, TAKUMI, FUJIOKA, HIROFUMI, ITO, HIROMI, YAMAMOTO, KEI
Publication of US20060165978A1 publication Critical patent/US20060165978A1/en
Priority to US12/834,073 priority Critical patent/US8007897B2/en
Abandoned legal-status Critical Current

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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
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Definitions

  • the present invention relates to an insulating sheet having good adhesiveness and heat conductivity and a method of producing it, and to a power module including the insulating sheet.
  • a heat-conductive sheet is used as a heat conductor, attached to a heat generator of electric and electronic parts for transferring and radiating the heat from the heat generator to a heat sink member.
  • a laminate of a metal sheet of copper, aluminium or the like or a graphite sheet having a heat conductivity of at least 10 W/mK with an adhesive layer containing a heat-conductive filler and capable of adhering at room temperature laminated on at least one surface of the sheet (for example, see JP-A-2002-194306 (page 1)).
  • the above-mentioned heat-conductive sheet includes plural layers of a sheet material such as a metal sheet or a graphite sheet and an adhesive layer, there exists an interface of a metal or graphite surface and an organic component of the adhesive layer between the sheet material and the adhesive layer therein, and the adhesiveness of the heat-conductive sheet is low in and around the interface area. Therefore, the heat-conductive sheet of the type is problematic in that both the heat conductivity and the insulating property thereof are poor.
  • the present invention provides an insulating sheet having good heat conductivity and good insulating capability, of which the adhesiveness is prevented from lowering.
  • the invention also provides a method for producing the insulating sheet and to provide a power module including the insulating sheet.
  • an insulating sheet includes an adhesive component of essentially a thermosetting resin and a filler member infiltrated into the component.
  • a heat conductivity of an adhesive face region of the insulating sheet is smaller than a heat conductivity of an inner region except the adhesive face region of the insulating sheet.
  • the first insulating sheet of the invention includes an adhesive component of essentially a thermosetting resin and a filler member infiltrated into the component, wherein the heat conductivity of the adhesive face region of the insulating sheet is smaller than the heat conductivity of the inner region except the adhesive face region of the insulating sheet. Having the constitution, therefore, the advantage of the insulating sheet is that it is free from a trouble of adhesiveness reduction and has good heat conductivity.
  • FIG. 1 is an explanatory view of an insulating sheet of an embodiment 1 of the invention
  • FIG. 2 is characteristic graph showing the specific adhesion strength profile of the insulating sheet of the embodiment 1 of the invention, depending on the heat conductivity thereof;
  • FIG. 3 is a characteristic graph showing the electric breakdown field intensity profile of the insulating sheet of the embodiment 1 of the invention, depending on the heat conductivity thereof;
  • FIGS. 4A and 4B are explanatory views graphically showing an insulating sheet of an embodiment 2 of the invention.
  • FIG. 5 is an explanatory view graphically showing another insulating sheet of the embodiment 2 of the invention.
  • FIGS. 6A and 6B are explanatory views graphically showing a condition of a filler member filled in an insulating sheet of an embodiment 3 of the invention.
  • FIGS. 7A and 7B are explanatory views graphically showing an insulating sheet of an embodiment 4 of the invention.
  • FIG. 8 is an explanatory view graphically showing an insulating sheet of an embodiment 5 of the invention.
  • FIGS. 9A to 9 C are explanatory views of a lamination step in a process of producing an insulating sheet of an embodiment 6 of the invention.
  • FIG. 10 is an explanatory view of a lamination step in a process of producing an insulating sheet of an embodiment 7 of the invention.
  • FIG. 11 is a constitutional view of a power module of an embodiment 8 of the invention.
  • FIG. 12 is a constitutional view of a power module of an embodiment 8 of the invention.
  • FIG. 13 is a constitutional view of a power module of an embodiment 8 of the invention.
  • FIG. 14 is a constitutional view of a power module of an embodiment 9 of the invention.
  • FIG. 1 is an explanatory view of an insulating sheet of an embodiment 1 of the invention, which is used for adhesion of a lead frame (conductive member) 2 with a power semiconductor device 1 mounted thereon to a heat sink member 6 .
  • the insulating sheet 7 of this embodiment includes an adhesive component of essentially a thermosetting resin such as an epoxy resin, and a filler member dispersed in the component, in which the filler member is not uniformly dispersed in the adhesive component.
  • the insulating 7 is divided into plural regions, in which one region is for participating in the adhesion of the insulating sheet 7 essentially to the lead frame (conductive member) 2 and to the heat sink member 6 (this is a region of from the adhesive face 7 a of the insulating sheet 7 to the inside of the insulating sheet, and this region is referred to as an adhesive face region 7 b , and in a thermosetting resin sheet, this region covers from the adhesive face up to a thickness of from 0.1 to 1000 ⁇ m of the sheet); and another is the other region except the adhesive face region (this region is referred to as an inner region 7 c ).
  • the filler member content of the adhesive face region 7 b is smaller than that of the inner region 7 c within a range within which the sheet adhesiveness reduction may be prevented, and the filler member content of the inner region 7 c is controlled within a range within which the sheet may exhibit good heat conductivity.
  • the insulating sheet of this embodiment of the invention has good adhesiveness, good heat conductivity and good insulating capability.
  • the quantity of heat to be generated by a power semiconductor device in the module is increasing more and more; but on the other hand, down-sizing and high producibility of power modules is desired.
  • a metal of high heat conductivity for the heat sink member in the module in which the conductive member with a power semiconductor device mounted thereon with electrical interconnection thereto must be electrically insulated from the heat sink member.
  • the power module of the type therefore requires an insulating sheet which is to be put between the conductive member and the heat sink member and which has good insulating capability and good heat conductivity and has good adhesiveness both to the conductive member and to the heat sink member.
  • FIG. 2 is a characteristic graph showing a relative adhesion strength profile of the insulating sheet of this embodiment, depending on the heat conductivity thereof.
  • the filler member content of the insulating sheet is controlled.
  • An insulating sheet having a predetermined heat conductivity is formed, for example, on a cupper substrate, and the adhesion strength between the insulating sheet and the copper substrate is measured.
  • the adhesion strength between the insulating sheet and the copper substrate is a relative adhesion strength based on the adhesion strength (100%) of an insulating sheet of an adhesive component alone with no filler member therein (its heat conductivity is 0.2 w/mK).
  • the increase in the filler member content results in the increase in the heat conductivity, but when the heat conductivity becomes over 8 W/mK as a result of the increase in the filler member content, the adhesion strength begins to lower since the interface between the filler member and the organic component in the adhesive component increases and defects such as voids therefore increase, and when the heat conductivity becomes larger than 10 W/mK, then the adhesion strength comes to lower greatly.
  • FIG. 3 is a characteristic graph showing a heat conductivity-dependent, electric breakdown profile of a 1-mm thick insulating sheet having a varying heat conductivity as above.
  • FIG. 3 confirms the following: The increase in the filler member content results in the increase in the heat conductivity of the insulating sheet, but when the filer member content increases and when the heat conductivity becomes over 15 W/mK, then the electric breakdown field intensity begins to lower since the interface between the filler member and the organic component in the adhesive component increases and defects such as voids therefore increase, and when the heat conductivity becomes larger than 16 W/mK, then the electric breakdown field intensity comes to lower greatly.
  • FIG. 2 and FIG. 3 indicate the following:
  • a sheet having a high heat conductivity of, for example, at least 10 W/mK is desired to be produced by uniformly introducing the above-mentioned filler member to the above-mentioned adhesive component, then the electric breakdown intensity of the sheet may be enough but the adhesion strength thereof lowers.
  • the heat conductivity of the sheet produced may be significantly lower than 10 W/mk.
  • the composition of the sheet must be so designed that the face region (adhesive face region) of the sheet having the function of adhering essentially to a conductive member or a heat sink member shall have a high adhesion strength when it has a low heat conductivity of at most 10 W/mK, preferably at most 8 W/mK, that the inner region except the adhesive face region shall have a high heat conductivity of from 10 to 16 W/mk, and that the heat conductivity of the adhesive face region is made smaller than the heat conductivity of the inner region.
  • the insulating sheet specifically so designed as above may satisfy all the requirements of good adhesiveness, good insulating capability and good heat conductivity.
  • the filler member may be dispersed in the insulating sheet of this embodiment, for example, in the manner as follows:
  • the filler member content profile in the insulating sheet may be so inclined that the filler member content may successively increase from the adhesive face toward the inside of the sheet whereby the heat conductivity of the insulating sheet may successively increase from the adhesive face toward the inside thereof; or the filler member content of the sheet may be stepwise varied in the adhesive face region 7 b and the inner region 7 c of the sheet whereby the heat conductivity of the adhesive face region of the insulating sheet is made to stepwise differ from the heat conductivity of the inner region except the adhesive face region of the insulating sheet.
  • the filler member in the insulating sheet of this embodiment may be a flattened or granular filler, or may be a sheet with through-holes.
  • the flattened filler is a filler having a flattened shape prepared by crushing a three-dimensional shape. Its thickness is thin, and it is not limited to rectangular forms having major sides and minor sides and having a four-sided cross section, but may include any other polygons and ovals with suitably rounded corners. In addition, it may also have a regular square or regular polygonal form having the same major sides and minor sides, or a circular form.
  • the filler of the type may be prepared by crushing its material, or may originally have any of those forms. For example, it includes aluminium oxide (alumina), boron nitride, silicon carbide, mica; and two or more of these may be used herein as combined.
  • the granular filler is preferably a nearly spherical one, but may have a polyhedral form as prepared by grinding.
  • Its material includes, for example, aluminium oxide (alumina), silicon oxide (silica), aluminium nitride, silicon carbide, boron nitride.
  • the granular filler may also be prepared by aggregating the above-mentioned flattened filler or granular filler particles.
  • the sheet with through-holes is, for example, a conductive metal sheet with through-holes, a ceramic sheet with through-holes, a ceramic sheet with metal-coated through-holes, or a glass laminate with metal-coated through-holes.
  • the adhesive component continues through the through-holes therein, and the sheet is therefore free from a trouble of delamination to be caused by interface continuation therein.
  • the conductive filler member such as a metal sheet with through-holes is preferably used not in the adhesive face region but in the inner region, especially in the center part, or that is, the core region in the thickness direction of the inner region, in view of the stability of the insulating property of the sheet.
  • the thermosetting resin that is the essential ingredient of the adhesive component to be in the insulating sheet of this embodiment may be, for example, an epoxy resin.
  • it includes a liquid bisphenol A-type epoxy resin (trade name: Epikote 828 by Japan Epoxy); a liquid bisphenol F-type epoxy resin (trade name: Epikote 807 by Japan Epoxy); a solid bisphenol A-type epoxy resin (trade name: Epikote 1001 by Japan Epoxy); an ortho-cresol-novolak-type epoxy resin (trade name: EOCN-102S by Nippon Kayaku); a phenol-novolak-type epoxy resin (trade name: Epikote 152 by Japan Epoxy); an alicyclic-aliphatic epoxy resin (trade name: CY179 by Vantico); a glycidyl-aminophenol-type epoxy resin (trade name: ELM100 by Sumitomo Chemical); a special polyfunctional epoxy resin (trade name: EPPN501 by Nippon Kayaku) Two or more of these may be used, as
  • alicyclic acid anhydrides such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, himic anhydride; aliphatic acid anhydrides such as dodecenylsuccinic anhydride; aromatic acid anhydrides such as phthalic anhydride, trimellitic anhydride; organic dihydrazides such as dicyandiamide, adipic acid dihydrazide; tris(dimethylaminomethyl)phenol, dimethylbenzylamine, 1,8-diazabicyclo(5,4,0)undecene, and their derivatives; imidazoles such as 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole. Using any of these, solid sheets may be produced. Two or more of these may be used herein, as combined.
  • a viscosity improver suitably usable herein is an organic solvent such as acetone, toluene.
  • FIGS. 4A and 4B are explanatory views graphically showing an insulating sheet 7 of an embodiment 2 of the invention, in which a filler member including a flattened filler 71 and a granular filler 72 is dispersed in an adhesive component 70 .
  • the insulating sheet 7 has an adhesive face 7 a on both sides thereof, the upper and lower face regions of the insulating sheet 7 are adhesive face regions 7 b .
  • the filler member content of the sheet 7 is so controlled that the filler member content of the adhesive face region 7 b is smaller than that of the inner region 7 c , and that the heat conductivity of the adhesive face region 7 b and the inner region 7 c falls within the scope as in the embodiment 1.
  • the filler member content successively continuously increases from the adhesive face of the insulating sheet toward the inner direction (center part) thereof.
  • the filler member content of the sheet is controlled relative to the overall volume of the filler member that includes the flattened filler 71 and the granular filler 72 , whereby the heat conductivity of the adhesive face region 7 b and the inner region 7 c is made to stepwise change.
  • the filler member content of the adhesive face region 7 b is smaller than that of the inner region 7 c , and the heat conductivity of the adhesive face region 7 b and the inner region 7 c falls within the scope as in the embodiment 1.
  • the insulating sheet 7 of this embodiment ensures good adhesiveness as the content of the thermosetting resin component in the adhesive face region 7 b thereof is enough, and it ensures good heat conductivity owing to the inner region 7 c thereof. Accordingly, as compared with a single use of an insulating sheet, which contains a large amount of a filler member so as to have a high heat conductivity and which therefore has extremely lowered adhesiveness and insulating capability, the invention provides an insulating sheet having both good adhesiveness and good heat conductivity.
  • FIG. 5 is an explanatory view graphically showing another insulating sheet 7 of the embodiment 2 of the invention, in which the insulating sheet 7 has an adhesive face 7 a only on one side thereof.
  • the sheet 7 has an adhesive face region 7 b on its adhesive face side and has an inner region 7 c on the other side thereof, and this is favorably used as a sheet structure that requires adhesiveness only on one side thereof.
  • FIGS. 6A and 6B are explanatory views graphically showing a condition of a filler member filled in an insulating sheet of an embodiemnt 3 of the invention, in which the arrow indicates the thickness direction of the insulating sheet.
  • FIG. 6A is a case where the filler member includes a flattened filler 71 and a granular filler 72 as mixed; and
  • FIG. 6B is a case where a flattened filler 71 alone is used.
  • the insulating sheet of this embodiment is the same as that of the embodiment 1, except that both a flattened filler 71 and a granular filler 72 are used in the embodiment 1 ( FIG. 6A ); or only a flattened filler 71 is used ( FIG. 6B ).
  • the granular filler supports the flattened filler therein, and it orients the flattened filler in the direction of the major side of the sheet. Accordingly, the heat radiation efficiency of the insulating sheet of the type in the thickness direction thereof may be extremely improved, and the frequency of overlapping the flattened filler particles in the sheet may be reduced, and the amount of the filler that may be in the sheet may be increased.
  • the flattened filler particles may be oriented while overlapping with each other, and therefore the insulating capability such as the electric breakdown field intensity of the sheet may be increased.
  • FIGS. 7A and 7B are explanatory views graphically showing an insulating sheet 7 of an embodiment 4 of the invention.
  • FIG. 7A is an insulating sheet with fillers 71 and 72 uniformly dispersed in an adhesive component 70 in such a manner that the heat conductivity of the sheet may fall within the range of the heat conductivity in the adhesive face region in the embodiment 1.
  • a metal sheet 73 having good heat conductivity and having through-holes 74 therein is disposed as a filler member in the core region that is the center region in the thickness direction of the inner region 7 c .
  • FIG. 7A is an insulating sheet with fillers 71 and 72 uniformly dispersed in an adhesive component 70 in such a manner that the heat conductivity of the sheet may fall within the range of the heat conductivity in the adhesive face region in the embodiment 1.
  • a metal sheet 73 having good heat conductivity and having through-holes 74 therein is disposed as a filler member in the core region that is the center region in the thickness direction of the inner
  • the 7B is a modification of the insulating sheet of the embodiment 2, in which the above-mentioned metal sheet 73 is disposed as a filler member in the center part (core region) of the inner region 7 c of the sheet.
  • the conductive filler member such as the above-mentioned metal sheet 73 is used in the inner region of the sheet rather than in the adhesive face region thereof, especially in the core region of the sheet, in view of the stability of the insulating capability of the sheet.
  • the resin continues through the through-holes of the metal sheet 73 , and therefore the interface between the metal sheet and the thermosetting resin in the insulating sheet does not continue and the sheet of the type is free from a trouble of interfacial delamination.
  • a coupling agent maybe added to the adhesive component for the purpose of further increasing the adhesion strength of the sheet.
  • the coupling agent includes, for example, ⁇ -glycidoxypropyltrimethoxysilane, N- ⁇ -(aminoethyl)- ⁇ -aminopropyltriethoxysilane, N-phenyl- ⁇ -aminopropyltrimethoxysilane, ⁇ -mercaptopropyltrimethoxysilane. Two or more of these coupling agents may be used herein as combined.
  • FIG. 8 is an explanatory view graphically showing an insulating sheet 7 of an embodiment 5 of the invention.
  • This is a modification of the insulating sheet of the embodiment 2, in which an insulating plate 76 such as a glass laminate plate having therein through-holes 74 coated with a metal layer 75 such as copper on the surface thereof is disposed as a filler member in the core region of the center region in the thickness direction of the inner region 7 c of the sheet.
  • the copper 75 applied to the through-holes imparts heat conductivity to the sheet, and the resin continues through the through-holes in the sheet with no interface therein.
  • the sheet is therefore free from a trouble of interfacial delamination.
  • the insulating sheet of this embodiment uses the insulating plate as above, and the insulating plate used in the sheet may protect the sheet from receiving the curing pressure and the resin shrinkage stress that may be applied thereto during the process of producing the sheet described below.
  • FIGS. 9A to 9 C are explanatory views of a lamination step in a process of producing an insulating sheet of an embodiment of the invention, in which the arrow indicates the lamination direction.
  • a first layer 17 b of a first insulating sheet composition to be an adhesive face region
  • a second layer 17 c of a second insulating sheet composition to be an inner region
  • a first layer 17 b of a first insulating sheet composition to be an adhesive face region, thereby giving an A- or B-stage laminate 7 e ( FIG. 9A ).
  • first layer 17 b of a first insulating sheet composition to be an adhesive face region On the substrate 21 , successively formed are a first layer 17 b of a first insulating sheet composition to be an adhesive face region, and a second layer 17 c of a second insulating sheet composition to be an inner region; and two of these structures are laminated to give an A- or B-stage laminate 7 e ( FIG. 9B ).
  • first layer 17 b of a first insulating sheet composition to be an adhesive face region; and this is stuck to a second layer 17 c of a second insulating sheet composition to be an inner region, thereby giving an A- or B-stage laminate 7 e ( FIG. 9C ).
  • the filler member content of the first insulating sheet composition to be the above adhesive face region is smaller than the filler member content of the second insulating sheet composition to be the inner region; and every insulating sheet composition shall have, after thermally cured, a thermal conductivity that falls with the range indicated in the embodiment 1.
  • the advantages of the process are that heat can be efficiently transferred to the sheet and the sheet produced may have a high heat conductivity and, in addition, since voids and other defects unfavorable for the insulating capability of the sheet may be prevented and corona generation may also be prevented, the sheet thus obtained herein may have an improved insulating capability.
  • FIG. 10 is an explanatory view of a lamination step in a process of producing an insulating sheet of an embodiment 7 of the invention, in which the arrow indicates the lamination direction.
  • an insulating sheet composition with a filler member dispersed in an adhesive component is applied onto a release film; and two of the same structure are prepared.
  • the filler member distribution is controlled so as to satisfy the heat conductivity range as in the embodiment 1, or that is, owing to the difference in the specific gravity between the filler member and the adhesive component and therefore owing to the difference in the precipitating velocity therebetween, the adhesive face region 7 b and the inner region 7 c formed may satisfy that heat conductivity range.
  • the release film is removed, and the two are laminated in such a manner that the filler member concentration may increase toward the center of the resulting laminate.
  • a laminate 7 e is obtained, and this is pressed in the same manner as in the embodiment 6, whereby the resins of the insulating sheet compositions are mixed together with no interface formation, and an insulating sheet of this embodiment is thus obtained such that the insulating sheet has continuous layers as a whole with no interface therebetween.
  • the advantages of the process are that heat can be efficiently transferred to the sheet and the sheet produced may have a high heat conductivity and, in addition, since voids and other defects unfavorable for the insulating capability of the sheet may be prevented and corona generation may also be prevented, the sheet thus obtained herein may have an improved insulating capability.
  • FIG. 11 , FIG. 12 and FIG. 13 are constitutional views of a power module of an embodiemnt 8 of the invention, in which a power semiconductor device 1 is mounted on a lead frame (conductive member) 2 ; a cured insulating sheet 77 of the above-mentioned embodiments 1 to 7 is provided, stuck to the conductive member 2 and a heat sink member 6 , and is connected to a control semiconductor device 4 separately mounted on the lead frame 2 , via a metal wire 5 ; and the constitutive members are encapsulated with a mold resin 10 .
  • the insulating sheet of the above-mentioned embodiments may be, as an A- or B-stage semi-cured solid sheet, disposed between the lead frame 2 and the heat sink member 6 , and then thermally cured whereby the lead frame 2 and the heat sink member 6 may be stuck to each other at high producibility.
  • the step of sticking the lead frame 2 to the heat sink member 6 by curing reaction of the insulating sheet may be effected simultaneously with the step of encapsulating the constitutive members with the mold resin 10 .
  • the mold resin 10 for encapsulating the power module may be, for example, a thermosetting resin such as an epoxy resin.
  • the material of the lead frame 2 may be a copper or aluminium metal.
  • the heat sink member 6 for example, usable are metals such as aluminium or their alloys, and also ceramics such as alumina.
  • the cured insulating sheet 77 that adheres the heat sink member 6 and the conductive member 2 has good heat conductivity, good adhesiveness and good insulating capability, which any conventional insulating heat-conductive resin sheet does not have, and therefore it enables down-sizing and increased capacity of the power module.
  • the insulating sheet Since the insulating sheet has a high heat conductivity, it may serve also as a heat sink member 6 to exhibit a good heat radiation characteristic. As in FIG. 13 , the cured form 77 of the insulating sheet 7 shown in FIG. 5 may serve also as a heat sink member to have a single-layered structure, which may reduce the difference in the thermal expansion coefficient between the sheet and the mold resin 10 . Accordingly, this is more effective for preventing cracks, etc.
  • FIG. 14 is a constitutional view of a power module of an embodiment 9 of the invention, which is a case-type power module.
  • this includes a heat sink member 6 , a circuit board 8 provided on the surface of the heat sink member 6 , a power semiconductor device 1 mounted on the circuit board 8 , a case 9 attached to the periphery around the heat sink member 6 , a mold resin 4 injected into the case for encapsulating the circuit board 8 and the power semiconductor device 1 therein, and a cured insulating sheet 77 of the embodiments 1 to 7 stuck to the heat sink member 6 on the side opposite to the side thereof with the circuit substrate 8 provided thereon; and the heat sink member 6 is stuck to a heat spreader 11 by the cured insulating sheet 77 .
  • the cured insulating sheet 77 that adheres the heat sink member 6 and the heat spreader 11 has good heat conductivity, good adhesiveness and good insulating capability, which any conventional insulating heat-conductive resin sheet does not have, and therefore it enables down-sizing and increased capacity of the power module.
  • methyl ethyl ketone As in Table 1, 200 parts by weight of methyl ethyl ketone was added to an adhesive component including 100 parts by weight of a bisphenol a-type epoxy resin (trade name: Epikote 828 by Japan Epoxy Resin) and 1 part by weight of a curing promoter, 1-cyanoethyl-2-methylimidazole (trade name: Curesol 2PN-CN by Shikoku Kasei); and then a filler member including a mixture of 143 parts by weight of a flattened filler, 7 ⁇ m boron nitride (trade name: GP by Denki Kagaku) and 201 parts by weight of a granular filler, 5 ⁇ m silicon nitride (trade name: SN-7 by Denki Kagaku) was added to it, mixed and kneaded with a three-roll kneader, and then defoamed in vacuum to prepare an insulating sheet composition A.
  • the proportion of the filler member to the overall volume of the adhesive component except methyl ethyl ketone and the filler member (filler member/insulating sheet) is 60% by volume.
  • the ratio by volume of boron nitride to silicon nitride is 1/1.
  • the insulating sheet composition A was applied onto the lubricant-coated surface of a polyethylene terephthalate sheet having a thickness of 100 ⁇ m and processed for lubrication on one surface thereof, according to a doctor blade coating process, statically left as such for 30 minutes to thereby make the filler member precipitate, and then heated and dried at 110° C. for 5 minutes. Then, another polyethylene terephthalate sheet was attached to the insulating sheet material composition A-coated surface of the sheet to prepare a B-stage laminate having a thickness of 55 ⁇ m.
  • an insulating sheet composition B in Table 1 was prepared.
  • the ratio by volume of boron nitride to silicon nitride in the insulating sheet composition B is 1/1, like in the insulating sheet composition A.
  • the proportion of the filler member to the overall volume of the adhesive component except methyl ethyl ketone and the filler member (filler member/insulating sheet) is controlled as in Table 1, whereby the heat conductivity of the insulating sheet of this example obtained in the manner mentioned below may be controlled to fall within the predetermined range shown in the above-mentioned embodiments of the invention.
  • the insulating sheet composition B was applied onto the lubricant-coated surface of a polyethylene terephthalate sheet having a thickness of 100 ⁇ m and processed for lubrication on one surface thereof, according to a doctor blade coating process, and then heated and dried at 110° C. for 5 minutes to obtain an insulating sheet B layer having a thickness of 35 ⁇ m (layer to be an adhesive face region). Then, the insulating sheet composition A was further applied onto it according to a doctor blade coating process, whereby an insulating sheet A layer having a thickness of 90 ⁇ m (layer to be an inner region) was laminated on it to give a B-stage laminate.
  • the heat conductivity of the thus-obtained insulating sheet was determined in the same manner as in Example 1.
  • An insulating sheet produced in the same manner as above was sandwiched between copper plates having a thickness of 2 mm to prepare an adhesiveness test piece. Its tensile strength was measured at a pulling rate of 50 mm/sec.
  • the electric breakdown field intensity of the insulating sheet was measured, and the result is given in Table 2.
  • An insulating sheet composition a, an insulating sheet composition B and an insulating sheet composition C were prepared as in Table 1.
  • the ratio by volume of boron nitride to silicon nitride in the insulating sheet composition C is 1/1, like in the insulating sheet composition A.
  • the proportion of the filler member to the overall volume of the adhesive component except methyl ethyl ketone and the filler member (filler member/insulating sheet) is controlled as in Table 1, whereby the heat conductivity of the insulating sheet of this example may be controlled to fall within the predetermined range shown in the above-mentioned embodiments of the invention.
  • the insulating sheet composition C was applied onto the lubricant-coated surface of a polyethylene terephthalate sheet having a thickness of 100 ⁇ m and processed for lubrication on one surface thereof, according to a doctor blade coating process, and then heated and dried at 110° C. for 5 minutes to obtain an insulating sheet C layer having a thickness of from about 5 to 7 ⁇ m. Then, the insulating sheet composition B was further applied onto it according to a doctor blade coating process, and heated and dried at 110° C. for 5 minutes to obtain an insulating sheet B layer having a thickness of 25 ⁇ m. The insulating sheet composition B was further applied onto it according to a doctor blade coating process, and heated and dried to form thereon an insulating sheet A layer having a thickness of 85 ⁇ m, thereby producing a B-stage laminate.
  • the heat conductivity of the thus-obtained insulating sheet was determined in the same manner as in Example 1.
  • An insulating sheet produced in the same manner as above was sandwiched between copper plates having a thickness of 2 mm to prepare an adhesiveness test piece. Its tensile strength was measured at a pulling rate of 50 mm/sec.
  • the electric breakdown field intensity of the insulating sheet was measured, and the result is given in Table 2.
  • An insulating sheet composition A and an insulating sheet composition B as in Table 1 were prepared.
  • the insulating sheet composition B was applied onto the lubricant-coated surface of a polyethylene terephthalate sheet having a thickness of 100 ⁇ m and processed for lubrication on one surface thereof, according to a doctor blade coating process, and heated and dried at 110° C. for 5 minutes, and then, the insulating sheet composition A was further applied onto it according to a doctor blade coating process, and heated and dried to obtain a B-stage laminate having the same thickness as in Example 2.
  • two of the B-stage laminate were prepared, and they were laminated such that a 50- ⁇ m thick copper sheet having 0.5 mm ⁇ through-holes formed therein at intervals of 1 mm was sandwiched between the laminates with the insulating sheet A layer faces being inside to face the copper sheet, in a mode of vacuum pressing at 130° C., thereby producing an insulating sheet of an example of the invention having an overall thickness of 220 ⁇ m as in FIG. 7B .
  • the heat conductivity of the thus-obtained insulating sheet was determined in the same manner as in Example 1.
  • An insulating sheet produced in the same manner as above was sandwiched between copper plates having a thickness of 2 mm to prepare an adhesiveness test piece. Its tensile strength was measured at a pulling rate of 50 mm/sec.
  • the electric breakdown field intensity of the insulating sheet was measured, and the result is given in Table 2.
  • An insulating sheet composition A and an insulating sheet composition B as in Table 1 were prepared.
  • the insulating sheet composition B was applied onto the lubricant-coated surface of a polyethylene terephthalate sheet having a thickness of 100 ⁇ m and processed for lubrication on one surface thereof, according to a doctor blade coating process, and heated and dried at 110° C. for 5 minutes, and then, the insulating sheet composition A was further applied onto it according to a doctor blade coating process, and heated and dried to obtain a B-stage laminate having the same thickness as in Example 2.
  • two of the B-stage laminate were prepared, and they were laminated such that a 100- ⁇ m thick alumina sheet having 1 mm ⁇ through-holes formed therein at intervals of 2 mm was sandwiched between the laminates with the insulating sheet A layer faces being inside to face the alumina sheet, in a mode of vacuum pressing at 130° C., thereby producing an insulating sheet of an example of the invention having an overall thickness of 300 ⁇ m as in FIG. 7B .
  • the heat conductivity of the thus-obtained insulating sheet was determined in the same manner as in Example 1.
  • An insulating sheet produced in the same manner as above was sandwiched between copper plates having a thickness of 2 mm to prepare an adhesiveness test piece. Its tensile strength was measured at a pulling rate of 50 mm/sec.
  • the electric breakdown field intensity of the insulating sheet was measured, and the result is given in Table 2.
  • An insulating sheet composition A and an insulating sheet composition B as in Table 1 were prepared.
  • the insulating sheet composition B was applied onto the lubricant-coated surface of a polyethylene terephthalate sheet having a thickness of 100 ⁇ m and processed for lubrication on one surface thereof, according to a doctor blade coating process, and heated and dried at 110° C. for 5 minutes, and then, the insulating sheet composition A was further applied onto it according to a doctor blade coating process, and heated and dried to obtain a B-stage laminate having the same thickness as in Example 2.
  • the heat conductivity of the thus-obtained insulating sheet was determined in the same manner as in Example 1.
  • An insulating sheet produced in the same manner as above was sandwiched between copper plates having a thickness of 2 mm to prepare an adhesiveness test piece. Its tensile strength was measured at a pulling rate of 50 mm/sec.
  • the electric breakdown field intensity of the insulating sheet was measured, and the result is given in Table 2.
  • the heat conductivity of the thus-obtained heat-conductive adhesive film was measured in the same manner as in Example 1.
  • a heat-conductive adhesive film produced in the same manner as above was sandwiched between copper plates having a thickness of 2 mm to prepare an adhesiveness test piece. Its tensile strength was measured at a pulling rate of 50 mm/sec in the same manner as in Example 1.
  • the electric breakdown field intensity of the heat-conductive adhesive film was measured, and the result is given in Table 2.
  • the heat conductivity of the thus-obtained heat-conductive adhesive film was measured in the same manner as in Example 1.
  • a heat-conductive adhesive film produced in the same manner as above was sandwiched between copper plates having a thickness of 2 mm to prepare an adhesiveness test piece. Its tensile strength was measured at a pulling rate of 50 mm/sec in the same manner as in Example 1.
  • the electric breakdown field intensity of the heat-conductive adhesive film was measured, and the result is given in Table 2.
  • Table 2 confirms that the insulating sheets of the examples of the invention have good adhesive strength, effectively satisfying both good heat conductivity and good insulating capability.

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110229837A1 (en) * 2008-11-25 2011-09-22 Kyocera Corporation Wafer Heating Apparatus, Electrostatic Chuck, and Method for Manufacturing Wafer Heating Apparatus
US20110262728A1 (en) * 2010-01-29 2011-10-27 Nitto Denko Corporation Thermal conductive sheet, light-emitting diode mounting substrate, and thermal conductive adhesive sheet
US20120039045A1 (en) * 2009-04-22 2012-02-16 Mitsubishi Electric Corporation Power module and method for detecting insulation degradation thereof
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CN114600567A (zh) * 2019-11-07 2022-06-07 帝人株式会社 散热片及其制备方法
US11798863B2 (en) 2017-12-08 2023-10-24 Sekisui Chemical Co., Ltd. Laminate and electronic device
US11884039B2 (en) 2017-05-10 2024-01-30 Sekisui Chemical Co., Ltd. Insulating sheet and laminate

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346510B1 (en) 1995-10-23 2002-02-12 The Children's Medical Center Corporation Therapeutic antiangiogenic endostatin compositions
JP2007288054A (ja) * 2006-04-19 2007-11-01 Toyota Motor Corp パワーモジュール
JP2009004536A (ja) * 2007-06-21 2009-01-08 Mitsubishi Electric Corp 熱伝導性樹脂シート及びこれを用いたパワーモジュール
JP2008010897A (ja) * 2007-09-28 2008-01-17 Mitsubishi Electric Corp 絶縁シートおよびこれを用いたパワーモジュール
JP2009130251A (ja) * 2007-11-27 2009-06-11 Nitto Shinko Kk 絶縁層付きヒートシンクの製造方法
JP5506170B2 (ja) * 2008-08-08 2014-05-28 パナソニック株式会社 実装構造体および電子機器
DE102008047649B4 (de) * 2008-09-15 2011-03-31 Gerhard Menninga Platte zum Ausgleichen von Wärme in einer Leiterplatte und zum Abführen von Wärme von einer Leiterplatte und Anordnung einer solchen Platte mit einer Leiterplatte
JP5688204B2 (ja) * 2008-10-16 2015-03-25 日東シンコー株式会社 絶縁シートの製造方法
TW201139641A (en) * 2010-01-29 2011-11-16 Nitto Denko Corp Heat dissipation structure
JP2012039064A (ja) * 2010-01-29 2012-02-23 Nitto Denko Corp 熱伝導性シート
JP5738652B2 (ja) * 2011-03-30 2015-06-24 日東電工株式会社 熱伝導性シートの製造方法および熱伝導性シート
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WO2015076098A1 (ja) * 2013-11-19 2015-05-28 日本碍子株式会社 断熱膜、および断熱膜構造
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2002A (en) * 1841-03-12 Tor and planter for plowing
US6214446B1 (en) * 1998-03-03 2001-04-10 Nec Corporation Resin film and a method for connecting electronic parts by the use thereof
US6225701B1 (en) * 1999-03-05 2001-05-01 Kabushiki Kaisha Toshiba Semiconductor device provided with heat-sink and method of manufacturing the same
US20020111415A1 (en) * 2000-07-28 2002-08-15 Mack Edward J. Thermoplastic materials with improved thermal conductivity and methods for making the same
US20030148079A1 (en) * 1999-11-09 2003-08-07 Matsushita Electric Industrial Co. Thermal conductive substrate and the method for manufacturing the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2586003Y2 (ja) * 1993-07-19 1998-12-02 サンケン電気株式会社 半導体装置
JPH0955459A (ja) 1995-06-06 1997-02-25 Seiko Epson Corp 半導体装置
TW398163B (en) 1996-10-09 2000-07-11 Matsushita Electric Ind Co Ltd The plate for heat transfer substrate and manufacturing method thereof, the heat-transfer substrate using such plate and manufacturing method thereof
JP2000216306A (ja) * 1999-01-26 2000-08-04 Fujitsu Ltd 半導体装置
JP2002194306A (ja) * 2000-12-26 2002-07-10 Sekisui Chem Co Ltd 熱伝導性シート
US6855892B2 (en) * 2001-09-27 2005-02-15 Matsushita Electric Industrial Co., Ltd. Insulation sheet, multi-layer wiring substrate and production processes thereof
JP3846699B2 (ja) * 2001-10-10 2006-11-15 富士電機ホールディングス株式会社 半導体パワーモジュールおよびその製造方法
JP3552701B2 (ja) * 2001-11-14 2004-08-11 セイコーエプソン株式会社 接着部材、半導体装置及びその製造方法、回路基板並びに電子機器
DE10214363A1 (de) 2002-03-30 2003-10-16 Bosch Gmbh Robert Kühlanordnung und Elektrogerät mit einer Kühlanordnung
JP2004087735A (ja) * 2002-08-26 2004-03-18 Toshiba Corp 半導体装置
JP2004140170A (ja) * 2002-10-17 2004-05-13 Hitachi Chem Co Ltd 接着用熱伝導性フィルム及びそれを用いた半導体装置
JP4068983B2 (ja) * 2003-02-13 2008-03-26 株式会社タイカ 熱伝導性シート
JP3981090B2 (ja) * 2004-02-19 2007-09-26 株式会社東芝 電子機器装置の製造方法
JP2006054221A (ja) * 2004-08-09 2006-02-23 Nitto Denko Corp 熱伝導シート

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2002A (en) * 1841-03-12 Tor and planter for plowing
US6214446B1 (en) * 1998-03-03 2001-04-10 Nec Corporation Resin film and a method for connecting electronic parts by the use thereof
US6225701B1 (en) * 1999-03-05 2001-05-01 Kabushiki Kaisha Toshiba Semiconductor device provided with heat-sink and method of manufacturing the same
US20030148079A1 (en) * 1999-11-09 2003-08-07 Matsushita Electric Industrial Co. Thermal conductive substrate and the method for manufacturing the same
US20020111415A1 (en) * 2000-07-28 2002-08-15 Mack Edward J. Thermoplastic materials with improved thermal conductivity and methods for making the same

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110229837A1 (en) * 2008-11-25 2011-09-22 Kyocera Corporation Wafer Heating Apparatus, Electrostatic Chuck, and Method for Manufacturing Wafer Heating Apparatus
US20120039045A1 (en) * 2009-04-22 2012-02-16 Mitsubishi Electric Corporation Power module and method for detecting insulation degradation thereof
US8749978B2 (en) 2010-01-29 2014-06-10 Nitto Denko Corporation Power module
US20110262728A1 (en) * 2010-01-29 2011-10-27 Nitto Denko Corporation Thermal conductive sheet, light-emitting diode mounting substrate, and thermal conductive adhesive sheet
US8547465B2 (en) 2010-01-29 2013-10-01 Nitto Denko Corporation Imaging device module
US8592844B2 (en) 2010-01-29 2013-11-26 Nitto Denko Corporation Light-emitting diode device
US20130270684A1 (en) * 2010-12-20 2013-10-17 Hitachi, Ltd. Power module and lead frame for power module
US9076780B2 (en) * 2010-12-20 2015-07-07 Hitachi, Ltd. Power module and lead frame for power module
US20120286194A1 (en) * 2011-05-13 2012-11-15 Nitto Denko Corporation Thermal conductive sheet, insulating sheet, and heat dissipating member
EP2717302A4 (de) * 2011-05-27 2015-03-11 Sumitomo Bakelite Co Halbleiterbauelement
US9379051B2 (en) 2011-05-27 2016-06-28 Sumitomo Bakelite Co., Ltd. Semiconductor device
EP2717302A1 (de) * 2011-05-27 2014-04-09 Sumitomo Bakelite Company Limited Halbleiterbauelement
US20150054013A1 (en) * 2011-06-22 2015-02-26 Lg Innotek Co., Ltd. Light emitting device module
US9705054B2 (en) * 2011-06-22 2017-07-11 Lg Innotek Co., Ltd. Light emitting device module
US11088045B2 (en) 2011-08-26 2021-08-10 Mitsubishi Electric Corporation Semiconductor device having a cooling body with a groove
US20130065987A1 (en) * 2011-09-13 2013-03-14 Nitto Denko Corporation Thermal conductive sheet and producing method thereof
EP2894952A1 (de) 2012-09-07 2015-07-15 Mitsubishi Electric Corporation Leistungshalbleiterbauelement
US9397018B2 (en) * 2013-01-16 2016-07-19 Infineon Technologies Ag Chip arrangement, a method for manufacturing a chip arrangement, integrated circuits and a method for manufacturing an integrated circuit
US9230889B2 (en) 2013-01-16 2016-01-05 Infineon Technologies Ag Chip arrangement with low temperature co-fired ceramic and a method for forming a chip arrangement with low temperature co-fired ceramic
US20140197552A1 (en) * 2013-01-16 2014-07-17 Infineon Technologies Ag Chip arrangement, a method for manufacturing a chip arrangement, integrated circuits and a method for manufacturing an integrated circuit
DE102014100282B4 (de) 2013-01-16 2023-06-22 Infineon Technologies Ag Integrierte schaltungen und verfahren zur herstellung einer integrierten schaltung
EP3331009A4 (de) * 2015-07-31 2019-04-03 Hitachi Automotive Systems, Ltd. Leistungsmodul
US11884039B2 (en) 2017-05-10 2024-01-30 Sekisui Chemical Co., Ltd. Insulating sheet and laminate
US11798863B2 (en) 2017-12-08 2023-10-24 Sekisui Chemical Co., Ltd. Laminate and electronic device
CN114600567A (zh) * 2019-11-07 2022-06-07 帝人株式会社 散热片及其制备方法
CN113314476A (zh) * 2020-02-27 2021-08-27 英飞凌科技奥地利有限公司 用于具有热界面材料的封装的保护帽
US20210272861A1 (en) * 2020-02-27 2021-09-02 Infineon Technologies Austria Ag Protector Cap for Package with Thermal Interface Material
US11769701B2 (en) * 2020-02-27 2023-09-26 Infineon Technologies Austria Ag Protector cap for package with thermal interface material

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US8007897B2 (en) 2011-08-30
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US20100277872A1 (en) 2010-11-04
CN101325186A (zh) 2008-12-17
DE102006062804B4 (de) 2014-07-10
CN100490132C (zh) 2009-05-20
CN1819163A (zh) 2006-08-16
DE102006004015B4 (de) 2022-06-30
JP2006210597A (ja) 2006-08-10
DE102006004015A1 (de) 2006-08-17

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