US20060042728A1 - Molybdenum sputtering targets - Google Patents

Molybdenum sputtering targets Download PDF

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Publication number
US20060042728A1
US20060042728A1 US10/931,203 US93120304A US2006042728A1 US 20060042728 A1 US20060042728 A1 US 20060042728A1 US 93120304 A US93120304 A US 93120304A US 2006042728 A1 US2006042728 A1 US 2006042728A1
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United States
Prior art keywords
sputtering
sputtering target
billet
molybdenum
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/931,203
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English (en)
Inventor
Brad Lemon
Joseph Hirt
Timothy Welling
James Daily
David Meendering
Gary Rozak
Jerome O'Grady
Peter Jepson
Prabhat Kumar
Steven Miller
Rong-Chein Wu
David Schwartz
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Materion Newton Inc
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Individual
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Publication date
Priority to US10/931,203 priority Critical patent/US20060042728A1/en
Application filed by Individual filed Critical Individual
Assigned to H.C. STARCK INC. reassignment H.C. STARCK INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JEPSON, PETER R., HIRT, JOSEPH, LEMON, BRAD, MEENDERING, DAVID, WELLING, TIMOTHY, DAILY, JAMES G., III, O'GRADY, JEROME, ROZAK, GARY, SCHWARTZ, DAVID G., KUMAR, PRABHAT, MILLER, STEVEN A., WU, RONG-CHEIN RICHARD
Priority to US11/574,469 priority patent/US8088232B2/en
Priority to CNB2005800372658A priority patent/CN100549202C/zh
Priority to KR1020137013387A priority patent/KR20130080054A/ko
Priority to EP05792638A priority patent/EP1784518A2/en
Priority to RU2007111556/02A priority patent/RU2007111556A/ru
Priority to AU2005279847A priority patent/AU2005279847A1/en
Priority to KR1020077007294A priority patent/KR20070057225A/ko
Priority to CA002577162A priority patent/CA2577162A1/en
Priority to MX2007002290A priority patent/MX2007002290A/es
Priority to PCT/US2005/030852 priority patent/WO2006026621A2/en
Priority to JP2007530275A priority patent/JP2008511757A/ja
Priority to BRPI0515132-5A priority patent/BRPI0515132A/pt
Priority to PL09154926T priority patent/PL2065480T3/pl
Priority to EP20090154926 priority patent/EP2065480B1/en
Priority to TW94129572A priority patent/TWI377261B/zh
Publication of US20060042728A1 publication Critical patent/US20060042728A1/en
Priority to IL181454A priority patent/IL181454A0/en
Assigned to DRESDNER BANK AG, NIEDERLASSUNG LUXEMBOURG, AS SECURITY AGENT reassignment DRESDNER BANK AG, NIEDERLASSUNG LUXEMBOURG, AS SECURITY AGENT INTELLECTUAL PROPERTY RIGHTS SECURITY AGREEMENT (MEZZANINE) Assignors: H.C. STARCK INC.
Assigned to DRESDNER BANK AG, NIEDERLASSUNG LUXEMBOURG, AS SECURITY AGENT reassignment DRESDNER BANK AG, NIEDERLASSUNG LUXEMBOURG, AS SECURITY AGENT INTELLECTUAL PROPERTY RIGHTS SECURITY AGREEMENT (SENIOR) Assignors: H.C. STARCK INC.
Assigned to DRESDNER BANK AG, NIEDERLASSUNG LUXEMBOURG, AS SECURITY AGENT reassignment DRESDNER BANK AG, NIEDERLASSUNG LUXEMBOURG, AS SECURITY AGENT INTELLECTUAL PROPERTY RIGHTS SECURITY AGREEMENT (SECOND LIEN) Assignors: H.C. STARCK INC.
Priority to US13/340,973 priority patent/US8425833B2/en
Priority to US13/849,918 priority patent/US9017600B2/en
Priority to US14/608,995 priority patent/US9309591B2/en
Priority to US15/061,566 priority patent/US9926623B2/en
Assigned to GLAS TRUST CORPORATION LIMITED, AS SECURITY AGENT FOR THE BENEFIT OF THE SENIOR SECURED PARTIES reassignment GLAS TRUST CORPORATION LIMITED, AS SECURITY AGENT FOR THE BENEFIT OF THE SENIOR SECURED PARTIES SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: H.C. STARCK INC.
Assigned to GLAS TRUST CORPORATION LIMITED, AS SECURITY AGENT FOR THE BENEFIT OF THE SECOND LIEN SECURED PARTIES reassignment GLAS TRUST CORPORATION LIMITED, AS SECURITY AGENT FOR THE BENEFIT OF THE SECOND LIEN SECURED PARTIES SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: H.C. STARCK INC.
Assigned to H.C. STARCK INC. reassignment H.C. STARCK INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: GLAS TRUST CORPORATION LIMITED
Assigned to H.C. STARCK INC. reassignment H.C. STARCK INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: GLAS TRUST CORPORATION LIMITED
Assigned to H.C. STARCK INC. reassignment H.C. STARCK INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: GLAS TRUST CORPORATION LIMITED
Assigned to H.C. STARCK INC. reassignment H.C. STARCK INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: GLAS TRUST CORPORATION LIMITED
Assigned to H.C. STARCK INC. reassignment H.C. STARCK INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: GLAS TRUST CORPORATION LIMITED
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/16—Both compacting and sintering in successive or repeated steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/16—Both compacting and sintering in successive or repeated steps
    • B22F3/162—Machining, working after consolidation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/006—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D8/00—Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/02—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
    • C21D8/0221—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the working steps
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D8/00—Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/02—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
    • C21D8/0247—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the heat treatment
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F2003/248—Thermal after-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/20—Refractory metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Definitions

  • the present invention relates to forms of molybdenum, their use as sputtering targets and method of their manufacture.
  • the sputtering technique is a film-forming technique with which a plasma is utilized to generate ions striking a sputtering target so as to result in atoms of the sputtering target depositing on a substrate as a film.
  • the sputtering technique is particularly used to produce a metallic layer in various manufacturing processes used in the semiconductor and the photoelectric industries.
  • the properties of films formed during sputtering is related to the properties of the sputtering target itself, such as the size of the respective crystal grain and the formation of secondary phase with distribution characteristics.
  • Various sputtering techniques are used in order to effect the deposition of a film over the surface of a substrate.
  • Deposited metal films such as metal films on a flat panel display device, can be formed by a magnetron sputtering apparatus or other sputtering techniques.
  • the magnetron sputtering apparatus induces plasma ions of a gas to bombard a target, causing surface atoms of the target material to be ejected therefrom and to be deposited as a film or layer on the surface of a substrate.
  • a sputtering source in the form of a planar disc or rectangle is used as the target, and ejected atoms travel along a line-of-sight trajectory to deposit on top of a wafer whose deposition face is parallel to the erosion face of the target.
  • a tubular-shaped sputtering target can also be used.
  • the plasma is external and the atoms are sputtered from the exterior of the tube.
  • the flat substrate is slowly passed over the target. Typically, its motion is horizontal, and in a direction at a right angle to the target axis, which is also horizontal. Thus the substrate can be gradually coated as it passes over the target.
  • sputtering targets particularly those containing molybdenum
  • These “non-uniformities” lead to non-uniform films being deposited onto substrates and devices, particularly flat panel displays that do not operate optimally.
  • molybdenum-based sputtering targets are manufactured using a conventional thermomechanical working step.
  • this methodology generally induces heterogeneity of grain size and texture.
  • the heterogeneity in the sputtering targets typically leads to sputtered films that do not possess the uniformity desired in most semiconductor and photoelectric applications.
  • large plates of pure molybdenum are required as sputtering targets.
  • the production of large plates is accomplished through the machining and assembly of multiple plates, often referred to as segmented plates.
  • the preparation of segmented plates requires an increased amount of machining and assembly cost compared to the production of a single plate ingot. Additionally, the assembly of different plates creates variability in the large segmented plate, which can cause unacceptable variability in films formed by sputtering the large plate target.
  • the present invention is directed to molybdenum, sputtering targets characterized as having no or minimal texture banding or through thickness gradient.
  • the present invention is additionally directed to a tubular-shaped sputtering target formed by:
  • the present invention is also directed to a tubular-shaped sputtering target containing molybdenum having a uniform texture, which features particularly a 110 orientation parallel to the longitudinal direction and a 111 orientation relative to the radial direction.
  • the present invention is additionally directed to a method of making a tubular sputtering target that includes:
  • Embodiments of the invention are also directed to a disc-shaped sputtering target containing molybdenum having a uniform grain and texture.
  • inventions of the invention are directed to large molybdenum plates having a non-segmented construction, weighing at least 300 kg, and containing at least 99% by weight of molybdenum.
  • Additional embodiments of the invention are directed to a process for preparing the above-described plates, which includes the steps of:
  • the present invention is further directed to sputtering targets and sintering tiles that include the above-described molybdenum plate.
  • the present invention is additionally directed to a method of sputtering that includes subjecting any of the above-described sputtering targets to sputtering conditions and thereby sputtering the target.
  • the present invention is further directed to a method of sputtering that includes subjecting the above-described sputtering target to sputtering conditions and thereby sputtering the target.
  • the present invention is further directed to a method for making a thin film including the steps of:
  • the present invention also provides a thin film made in accordance with the above-described method.
  • the thin films can be used in electronic components such as semiconductor devices, thin film transistors, TFT-LCD devices, black matrix devices that enhance image contrast in Flat Panel Displays, solar cells, sensors, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
  • CMOS complementary metal oxide semiconductor
  • FIG. 1 is a schematic view of a consolidated hollow billet according to the invention
  • FIG. 2 is a schematic view of a hollow billet being extruded according to the present invention for extrusion of a tube;
  • FIGS. 3A, 3B and 3 C show electron backscatter diffraction (EBSD) electron micrographs relative to the longitudinal (z), radial (ND) and tangential (x) directions, respectively, of a tubular sputtering target according to the present invention
  • FIG. 4 shows the EBSD micrograph of 3B under higher magnification
  • FIG. 5 shows the EBSD Pole Figure analysis of a tubular sputtering target according to the present invention
  • FIG. 6 shows the EBSD Inverse Pole Figure analysis of a tubular sputtering target according to the present invention
  • FIG. 7 is a schematic showing a solid billet being extruded according to the invention for intermediate work pieces
  • FIGS. 8A and 8B show schematic views of upset forging a billet according to the present invention
  • FIGS. 9A and 9B show sputtering target plates according to the present invention being cut from forged billets.
  • FIGS. 10A and 10B show a billet being hammer forged according to one embodiment of this invention.
  • banding refers to non-uniformities in the grain or texture, the grain size, or grain orientation that occur in a strip or pattern along the surface of the sputtering target.
  • through thickness gradient refers to changes in grain or texture, grain size, or grain orientation moving from the edge of the target to the center of the target.
  • molybdenum, sputtering targets described herein below are characterized as having no or minimal banding or through thickness gradient.
  • the present invention is directed to molybdenum sputtering targets having fine, uniform grain size as well as uniform texture, substantially free of both texture banding and through thickness gradient from a center to an edge of the target, with high purity and optionally micro-alloyed for improved performance.
  • the molybdenum sputtering targets are very pure, as such, the molybdenum sputtering targets have a purity of at least 99.5%, in some cases 99.9%, n other cases 99.95%, in some instances at least 99.99% and in other instances at least 99.999%.
  • the term “purity” refers to the weight percentage of molybdenum in the sputtering target.
  • the present invention provides a tubular-shaped sputtering target and its method of manufacture.
  • the present method involves the use of pure molybdenum powder as a starting material, and its consolidation to a substantially fully dense article in the form of a tube.
  • the tubular form produced has a fine, uniform grain size, and a texture which is substantially uniform throughout, and does not change from tube to tube.
  • Such tubular forms yield thin films that have the required purity, and a thickness which is both easily predictable and uniform across the area of a given substrate.
  • the tubular-shaped sputtering target has a texture that is substantially free of banding and substantially free of any through thickness gradient.
  • a tubular-shaped sputtering target is formed by the pressing and sintering of molybdenum powder to form a billet, removing the center of the billet, working the billet, and heat treating the billet to form a tubular-shaped sputtering target.
  • ammonium dimolybdate is selected to meet required purity specifications, and then reduced to molybdenum metal powder in hydrogen using conventional hydrogen reduction processes.
  • the ammonium dimolybdate can be at least 95% pure, in some cases at least 99% pure, in other cases at least 99.5% pure and in certain instances 99.999% pure.
  • the purity of the ammonium dimolybdate can range between any of the values recited above.
  • the molybdenum powder is placed in a mold and the powder is pressed at a pressure of at least 16 ksi, in some cases at least 30 ksi and in other cases at least 32 ksi. Also, the powder can be pressed at a pressure of up to 40 ksi, in some cases up to 37 ksi and in other cases up to 35 ksi.
  • the molybdenum powder in the mold can be pressed at any pressure recited above or at pressures ranging between any of the pressures recited above.
  • the pressed billet when the pressed billet is sintered in the mold, it is sintered at a temperature of at least 1785° C., in some cases at least 1800° C. and in other cases at least 1850° C. Also, the pressed billet can be sintered at a temperature of up to 2200° C., in some cases up to 2175° C. and in other cases up to 2150° C.
  • the pressed molybdenum billet in the mold can be sintered at any temperature recited above or at temperatures ranging between any of the temperatures recited above.
  • the pressing is performed isostatically.
  • the powder is sintered in hydrogen.
  • the center of the consolidated billet is removed through trepanning such that the ID I is smaller than the inside diameter of the finished tubular form.
  • the OD I is selected such that the ratio of reduction in cross-sectional area normal to the billet length is at least 3:1, in some cases at least 3.5:1 and in other cases at least 4:1.
  • the reduction in cross-sectional area normal to the billet length can be up to 12:1, in some cases up to 10:1 and in other cases up to 8:1.
  • the reduction in cross-sectional area normal to the billet length is 4.9:1 or higher.
  • the reduction in cross-sectional area normal to the billet length can be any of the values or range between any of the values recited above.
  • the tubular billet is worked to form a worked billet having an inner diameter ID and an outer diameter OD f such that the ratio of OD I to OD f is as described above.
  • the tubular billet is worked by extruding the billet, as shown in FIG. 2 .
  • the billet is extruded with a reduction ratio (created by the change of OD I to OD f ) in cross-sectional area as described above.
  • the billet length may be variable.
  • the product form ID is controlled through the use of mandrel tooling.
  • the tubular billet can be extruded at a temperature of at least 925° C., in some cases at least 950° C., and in other cases at least 1000° C. Also, the tubular billet can be extruded at a temperature of up to 1370° C., in some cases up to 1260° C. and in other cases up to 1175° C. The tubular billet can be extruded at any temperature recited above or at a temperature ranging between any of the temperatures recited above.
  • the working i.e., reduction ratio (created by the change of OD I to OD f ) in cross-sectional area
  • a rotary forging process that replaces the extrusion
  • the billet after working the billet, it is heat treated at a temperature of at least 815° C., in some instances at least 925° C., in some cases at least 950° C. and in other cases at least 1000° C. Also, the heat treatment can be carried out at up to 1375° C., in some cases up to 1260° C. and in other cases up to 1175° C. The heat treatment can be at any temperature or range between any temperatures recited above.
  • the heat treatment is carried out at from 1250 to 1375° C.
  • the heat treatment is carried out at from 815 to 960° C.
  • the heat treatment is applied for “stress-relief” purposes only.
  • the tubular form After heat treatment, the tubular form is machined to its final dimensions.
  • the tubular-shaped sputtering target has a uniform texture which is a 110 orientation parallel to the longitudinal direction and a 111 orientation relative to the radial direction.
  • the present invention provides a source of molybdenum in the form of a tube.
  • the tube can be used in a sputtering process whereby thin films are deposited on a substrate.
  • the components containing thin-film-deposited substrates are used in a flat panel display (FPD).
  • the invention provides molybdenum in a form and with properties which were not previously available, allowing improvements in the manufacturability and the performance of the FPD's.
  • a particular advantage of the present tubular-shaped sputtering target is its uniform texture.
  • the crystallographic texture of a tube made according to the invention was determined and is detailed below.
  • FIGS. 3A, 3B and 3 C show the texture of the sample relative to the longitudinal (z), radial (ND) and tangential (x) directions, respectively.
  • FIG. 4 shows the top part of FIG. 3B at higher magnification, so the grains can be distinguished.
  • FIG. 5 shows the Pole Figures
  • FIG. 6 shows the Inverse Pole Figures.
  • the material is fully recrystallized and strain-free, as seen by the fact that there is no significant color variation within each grain.
  • the texture is well defined, but not very strong (the highest peak is 3.6 times random).
  • the most obvious component of texture is 110 parallel to the longitudinal direction, as seen by the predominant red in FIG. 3A .
  • Another noticeable feature is a sharp 111 peak parallel to the radial direction.
  • the fine, uniform grain size, and the uniformity of texture through the thickness of the tube and along the length of the tube are features which distinguish the present invention from the prior art. These features allow for more uniform film deposition during sputtering operations.
  • the present invention provides a sputtering target having a uniform and fine texture and grain structure.
  • the grain size is at least 22 ⁇ m, and in some cases at least 45 ⁇ m. More importantly, however, the average grain size is not more than 125 ⁇ m, in some cases not more than 90 ⁇ m and in other cases not more than 65 ⁇ m. When the grain size is too large, thin films formed from sputtering the present sputtering target will not have the desired uniform texture and/or film thickness.
  • the grain size in the present sputtering target can be any value or range between any values recited above.
  • Embodiments of the invention are also directed to a novel method of manufacturing molybdenum sputtering targets, which produces performance superior to that which is presently known in the art.
  • This method of manufacture involves the use of pure molybdenum powder as a starting material and its consolidation to a substantially fully dense article in the form of a plate.
  • the inventive plate which is produced through a multi-directional thermomechanical working process as described below, has a fine, uniform grain size and a texture which is substantially uniform throughout the plate.
  • Such plates yield thin films that have the required purity, and a thickness that is both easily predictable and uniform across the area of the substrate.
  • the plates have a texture that is substantially free of banding and substantially free of any through thickness gradient.
  • ammonium dimolybdate is reduced to molybdenum metal powder in hydrogen using methodologies well known in the art.
  • the ammonium dimolybdate is 99.95%, in some cases 99.9% and in other cases 99.5% pure.
  • the molybdenum powder is placed in a mold and pressed at a pressure of at least 100 MPa, in some cases at least 200 MPa and in other cases at least 250 MPa. Also, the powder can be pressed at a pressure of up to 275 MPa.
  • the molybdenum powder in the mold can be pressed at any pressure recited above or at pressures ranging between any of the pressures recited above.
  • the molybdenum powder is sintered at a temperature of at least 1785° C.
  • the powder can be sintered at a temperature of up to 2175° C., in some cases up to 2200° C.
  • the pressed molybdenum workpiece can be sintered at any temperature recited above or at temperatures ranging between any of the temperatures recited above.
  • the pressing is performed isostatically.
  • the pressed powder is sintered in hydrogen.
  • the molybdenum metal powder can be placed in a rubber mold, isostatically pressed and the pressed piece then sintered in hydrogen to form a billet with a cross-sectional area which can be from 1.5 to 4, in some cases from 2 to 3, and in a particular embodiment approximately 2.4 times the size of the intended target cross-sectional area of the eventual sputtering target.
  • the billet has a diameter of D o .
  • the billet is then preheated, prior to extruding, to a temperature of at least 900° C., in some cases 925° C. and in other cases at least 950° C. Also, the billet can be preheated to a temperature of up to 1260° C., in some cases 1225° C. and in other cases up to 1175° C.
  • the preheated temperature can be any value or can range between any values recited above.
  • the billet is extruded to form an extruded billet having a diameter of D 2 , such that the ratio of reduction (D o :D 2 ) in cross-sectional area is at least 2.5:1, in some cases at least 3:1 and in other cases at least 3.5:1. Also, the ratio of reduction can be up to 12:1, in some cases 10:1 and in other cases up to 8:1. The ratio of reduction can be any value or range between any values recited above.
  • the billet length can be variable.
  • rotary forging or hammer forging can be used in place of the extrusion operation to provide a billet with the aforementioned ratio of reduction (D o :D 2 ) in cross-sectional area.
  • the first heat treatment step In order to prepare the extruded billet for upset forging, it is subjected to a first heat treatment step.
  • This heat treatment step generally provides stress relief.
  • the first heat treatment is conducted at a temperature of at least 800° C., in some cases at least 815° C., in some cases at least 830° C. and in other cases at a temperature of at least 850° C.
  • the first heat treatment can be conducted at a temperature up to 960° C., in some cases up to 930° C. and in other cases up to 900° C.
  • the temperature of the first heat treatment step can be any value recited above or can range between any values recited above.
  • the billet is also cut to a length so that it will not buckle.
  • the billet is cut to a length such that the billet's aspect ratio (Length/Diameter) is less than or equal to 2.0, in some cases less than or equal to 1.6.
  • the heat-treated extruded billet is preheated to a temperature of at least 900° C., in some cases at least 925° C., in other cases at least 950° C., in some situations at least 975° C. and in other cases at least 1000° C.
  • the heat-treated extruded billet can be preheated to a temperature of up to 1300° C., in some cases up to 1260° C., in other cases up to 1200° C. and in some instances up to 1150° C.
  • the heat-treated extruded billet can be preheated to any temperature recited above or can range between any temperature recited above.
  • the heat-treated extruded billet is subjected to upset forging such that the ratio of D 2 , the heat-treated extruded billet cross-sectional area, to D f , the forged billet cross-sectional area, is from 1:1.5 to 1:3, in some cases 1:1.75 to 1:2.5, and in other cases from 1:1.8 to 1:2.25.
  • the ratio of D 2 to D f is approximately 1:2 ⁇ 0.2.
  • FIG. 8A shows the billet at the start of the upset forging process and FIG. 8B shows the billet at the end of the upset forging process.
  • the upset forging of the extruded billet is carried out at a temperature of at least 800° C., in some cases at least 900° C., in other cases at least 925° C. and in some instances at least 950° C. Also, the upset forging of the extruded billet can be carried out at up to 1300° C., in some cases up to 1260° C., in other cases up to 1200° C., in some instances up to 1100° C. and in other instances up to 1000° C.
  • the forging temperature allows the billet to be forged to form a forged billet having a diameter D f as described above.
  • the forging temperature can be any temperature described above or can range between any of the temperatures recited above.
  • the second heat treatment step is a recrystallization step that provides a strain-free equiaxial grain structure.
  • the second heat treatment is conducted at a temperature of at least 1200° C., in some cases at least 1250° C., in some cases at least 1275° C. and in other cases at a temperature of at least 1300° C.
  • the second heat treatment can be conducted at a temperature up to 1400° C., in some cases up to 1375° C. and in other cases up to 1350° C.
  • the temperature of the second heat treatment step can be any value recited above or can range between any values recited above.
  • the second heat treatment provides stress relief only and not recrystallization.
  • the heat treatment is carried out at a temperature of at least 800° C., in some cases 815° C. and in other cases at least 850° C.
  • the heat treatment can be carried out at a temperature of up to 1000° C., in some cases up to 960° C. and in other cases up to 925° C.
  • the temperature of the second heat treatment step under this embodiment can be any value recited above or can range between any values recited above.
  • the second heat treatment is applied at a temperature and for a time that provides a billet that has a strain-free equiaxial grain structure.
  • a billet is provided that is completely recrystallized and strain free.
  • FIG. 9A material affected during upset forging by the centering disks (CD) is removed.
  • the material affected by the centering disks is not generally usable as target material.
  • Sputtering targets are sliced from the billet according to the orientation shown in FIG. 9B . The entirety of the billet is usable as target once the centering disk affected material is removed.
  • the upset forging operation is replaced by a hammer/upset forging such that the ratio of D 2 , the heat-treated extruded billet cross-sectional area, to D f , the forged billet cross-sectional area, is as described above.
  • FIG. 10A shows the billet at the start of the hammer forging operation and
  • FIG. 10B shows the billet after the hammer forging operation.
  • the billet is given a second heat treatment as described above. In other words, a disc-shaped portion is cut from the heat-treated forged billet to provide a disc-shaped sputtering target.
  • the grain and texture of the resulting sputtering target is generally analyzed using electron backscatter diffraction (EBSD). Because of the above-described process, the grain and texture from target to target is very consistent.
  • the targets are typically sampled from the center, mid-radius, and edge on the XZ plane, i.e., the radial-axial plane.
  • a sputtering target having a uniform and fine texture and grain structure.
  • the grain size is at least 22 ⁇ m and in some cases at least 65 ⁇ m. More importantly, however, the average grain size is not more than 125 ⁇ m, in some cases not more than 90 ⁇ m and in other cases not more than 65 ⁇ m as determined by electron backscatter diffraction.
  • the grain size is too large and/or non-uniform, thin films formed from sputtering the present sputtering target will not have the desired uniform texture and/or film thickness.
  • the grain size in the present sputtering target can be any value or range between any values recited above.
  • the present invention also provides a method of making a sputtering target including the steps, as described above, of:
  • Embodiments of the invention provide large molybdenum plates having a non-segmented construction.
  • non-segmented refers to plates made in one piece and not to plates made by combining or joining two or more plates.
  • the present plates weigh at least 300 kg, in some cases at least 350 kg and in other cases at least 400 kg.
  • the plates according to the invention include at least 99%, in some cases at least 99.5% and in other cases at least 99.9% by weight of molybdenum.
  • the large molybdenum plates have a fine, uniform grain size where the average grains are not more than 100 ⁇ m, in some cases not more than 60 ⁇ m, and in other cases not more than 20 ⁇ m.
  • the grain size can be at least 5 ⁇ m and in some cases at least 10 ⁇ m.
  • the grain size can be any value recited above or range between any values recited above.
  • the large molybdenum plates include a backing plate to provide support.
  • the large plate has a texture that is substantially free of banding and substantially free of any through thickness gradient.
  • the plates have a rectangular cross-sectional shape and have a length of at least 0.8 m, in some cases at least 1.2 m and in other cases at least 2 m and up to 2.6 m, in some cases up to 3.4 m and in other cases up to 4 m; a width of at least 0.7 m, in some cases at least 0.9 m and in other cases at least 1.2 m and up to 1.7 m, in some cases up to 2.0 m and in other cases up to 2.5 m; and a height (thickness) of at least 0.008 m, in some cases at least 0.012 m and in other cases at least 0.018 m and up to 0.020 m, in some cases up to 0.032 m and in other cases up to 0.064 m.
  • the dimensions of the rectangular plate can be any of the values recited above and can range between any of the values recited above.
  • the plates have a square cross sectional shape and have a length of at least 0.8 m, in some cases at least 1.0 m and in other cases at least 1.2 m and up to 1.6 m, in some cases up to 2.0, in some situations up to 2.5 m, and in other cases up to 3.0 m; a substantially equal width and height (thickness) of at least 0.008 m, in some cases at least 0.012 m and in other cases at least 0.018 m and up to 0.020 m, in some cases up to 0.032 m and in other cases up to 0.064 m.
  • the dimensions of the square plate can be any of the values recited above and can range between any of the values recited above.
  • a portion can be cut from the plate to form either a circular or cylindrical cross-sectional shaped portion having a length (thickness) of at least 0.008 m, in some cases at least 0.010 m and in other cases at least 0.012 m and up to 0.018 m, in some cases up to 0.032 m and in other cases up to 0.064 m; and a diameter of at least 0.7 m, in some cases at least 0.9 m and in other cases at least 1.2 m and up to 1.75 m, in some cases up to 2.0 m, in other cases up to 2.5 m, and in some instances up to 3.0 m.
  • the dimensions of the circular portion can be any of the values recited above and can range between any of the values recited above.
  • a backing plate is included with the sputtering target.
  • molybdenum powder is used.
  • the powder is prepared by thermal and hydrogen reduction of ammonium molybdate that is at least 99%, in some cases at least 99.5% and in other cases at least 99.9% pure to produce molybdenum metal powder.
  • the powder is typically screened to produce a particle morphology and size distribution to sinter.
  • the particle size typically has a weight average value of at least 0.1 ⁇ m, in some cases at least 0.5 ⁇ m, in other cases at least 1 ⁇ m, in some instances at least 5 ⁇ m, in other instances at least 10 ⁇ m, in some situations at least 15 ⁇ m and in other situations at least 20 ⁇ m.
  • the particle size typically has a weight average value and up to 150 ⁇ m, in some cases up to 125 ⁇ m, in other cases up to 100 ⁇ m, in some instance up to 75 ⁇ m, in other instances up to 50 ⁇ m and in some situations up to 40 ⁇ m.
  • the particle size of the powder can be any of the values recited above and can range between any of the values recited above.
  • the particle morphology can typically be described as irregularly-shaped agglomerates of fine particles.
  • the molybdenum powder is poured into a sheet bar mold and jolted/tapped.
  • the molybdenum powder is then consolidated by cold isostatic pressing (CIP) at a pressure of at least 100, in some cases at least 125 and in other cases at least 150 Mpa. Also, the CIP pressure can be up to 250, in some cases up to 225, and in other cases up to 200 Mpa. The CIP pressure is a pressure sufficient to form a sheet bar.
  • the CIP pressure can be any value recited above or range between any values recited above.
  • the sheet bar is sintered at a temperature of at least 1600° C., in some cases 1650° C. and in other cases at least 1700° C.
  • the sintering temperature can be up to 1800° C., in some cases up to 1750° C. and in other cases up to 1725° C.
  • the sintering temperature is a temperature sufficient to form an ingot having a density of at least 90% of the theoretical density.
  • the sintering temperature can be any temperature or range between any temperatures recited above.
  • the sintering is performed for at least 4, in some cases at least 10 and in other cases at least 16 hours. Also, the sintering is performed for up to 32, in some cases up to 24 and in other cases up to 20 hours.
  • the time for sintering is a length of time sufficient to achieve at least 90% of the theoretical density. The length of time for sintering can be any value recited above or range between any values recited above.
  • the sintered bar, or ingot is preheated to a temperature of at least 1100° C., in some cases at least 1150° C. and in other cases at least 1200° C. Also, the ingot can be preheated to a temperature of up to 1450° C., in some cases up to 1350° C. and in other cases up to 1300° C. The ingot can be preheated to any temperature or range between any temperatures recited above.
  • the preheated ingot is hot rolled at a temperature of at least 1050° C., in some cases at least 1100° C. and in other cases at least 1150° C.
  • the ingot can be hot rolled at a temperature of up to 1400° C., in some cases up to 1300° C. and in other cases up to 1250° C.
  • the hot rolling effects a reduction in the thickness and an increase in the length of the ingot.
  • the hot rolling temperature can be any value or range between any value recited above.
  • the reduction achieve from hot rolling can be at least 50%, in some cases 75% and in other cases at least 98% of the thickness of the pre-hot rolled ingot.
  • the length of the ingot can increase at least 50%, in some cases at least 75% and in other cases at least 150% and can increase up to 300%, in some cases up to 400% and in other cases up to 500%.
  • the length of the ingot can increase to any value or range between any of the values recited above.
  • the thickness of the hot rolled ingot can be further reduced by subsequent reduction, maintaining the integrity of the plate.
  • the subsequent reduction can be at least 10%, in some cases at least 15% and in other cases at least 20% and can be up to 30%, in some cases up to 28% and in other cases up to 25% of the hot rolled ingot thickness.
  • the subsequent reduction can be any value or range between any of the values recited above.
  • the plates can be reheated to maintain the temperatures indicated above.
  • the plates are inspected for integrity throughout the rolling process.
  • the plates can be precision leveled to achieve optimum flatness for subsequent machining/grinding operations in order to achieve the desired final dimensions.
  • the roll reduced ingot is heat treated at a temperature of at least 850° C., in some cases at least 860° C. and in other cases at least 880° C. and can be up to 950° C., in some cases up to 920° and in other cases up to 900° C.
  • This heat treatment step can be carried out any temperature or range between any of the temperatures recited above.
  • the roll reduced ingot heat treatment is performed for at least 30 minutes, in some cases at least 45 minutes and in other cases at least 60 minutes. Also, the heat treatment can be performed for up to 180 minutes, in some cases up to 120 minutes and in other cases up to 90 minutes.
  • the length of time for the heat treatment can be any value recited above or range between any values recited above.
  • the integrity of an ingot can be conducted using ultrasonic techniques.
  • microalloys in preparing any of the sputtering targets described above, can be included in the molybdenum powder prior to pressing.
  • suitable microalloys include those comprising one or more metallic materials selected from Ta, Nb, Cr, W and/or V.
  • the microalloy has a body-centered cubic (BCC) structure.
  • microalloys When microalloys are used they are typically processed by adding one or more metallic materials into the molybdenum powder before the powder pressing stage described above. The described steps in forming ingots or billets are followed as indicated above.
  • the metallic materials can be included at up to 1000 ppm, in some cases up to 750 ppm, in other cases up to 500 ppm, in some situations up to 300 ppm, in other situations up to 150 ppm, and in some instances up to 75 ppm. Also, when included, the metallic materials can be included at a level of at least 10 ppm, in some cases at least 20 ppm and in other cases at least 25 ppm.
  • microalloys When microalloys are included, they are typically included to provide particular affects on the molybdenum that is finally produced.
  • the molybdenum can take on a BCC structure by intentionally adding W, V and/or Cr or combinations thereof.
  • These BCC metallic elements when included with the molybdenum, create a localized lattice stress. The stress decreases the energy barrier for (a) atoms leaving the sputtering targets when sputtering (i.e. increasing the sputtering rates of the targets), and (b) the etch of thin film during photolithographic processes (for example by either liquid etch or dry etch, such as by plasma etch or reactive etch).
  • the microalloy When the microalloy is included, it is included at a level that provides the above-described effect, but not at a level that would compromise any properties of the film produced.
  • the present invention provides a method of sputtering, whereby any of the above-described sputtering targets are subjected to sputtering conditions and are thereby sputtered.
  • Suitable sputtering methods include, but are not limited to, magnetron sputtering, pulse laser sputtering, ion beam sputtering, triode sputtering, and combinations thereof.
  • the present invention also provides a method of making a thin film including the steps of:
  • a step including supplying a reactive gas to the Mo can be added.
  • a reactive gas is a gas that includes a component that can react with the molybdenum either in a gaseous state or once deposited onto a substrate to form a molybdenum compound.
  • the reactive gas can be oxygen, nitrogen and/or a silicon containing gas.
  • the thin film applied by the present method can have any desired thickness.
  • the thickness of the thin film will depend on the end use application desired.
  • the thickness of the thin film can be at least 0.5 nm, in some situations 1 nm, in some cases at least 5 nm, in other cases at least 10 nm, in some situations at least 25 nm, in other situations at least 50 nm, in some circumstance at least 75 nm and in other circumstances at least 100 nm.
  • the film thickness can be up to 10 ⁇ m, in some cases up to 5 ⁇ m, in other cases up to 2 ⁇ m, in some situations up to 1 ⁇ m and in other situations up to 0.5 ⁇ m.
  • the film thickness can be any of the stated values or can range between any of the values stated above.
  • the thin film can be or be part of a flat panel display.
  • the films obtained from such targets have excellent uniformity.
  • a very thin film is provided.
  • the thin film is at least 100 ⁇ , in some cases at least 250 ⁇ and in other cases at least 500 ⁇ .
  • the thin film can be up to 5,000 ⁇ , in some cases up to 3,000 ⁇ , in other cases up to 2,500 ⁇ and in some situations up to 2,000 ⁇ .
  • Suitable substrates for the thin film used in the flat panel display devices include, but are not limited to, flexible foils, plastic substrates, glass substrates, ceramic substrates, and combinations thereof.
  • the plastic substrates include, but are not limited to, polynorbornene, polyimide, polyarylate, polycarbonate, polyethylenenaphthanate (PEN), polyethyleneterephthalate (PET), and the like.
  • a non-limiting example of a ceramic substrate includes sapphire.
  • MoO x oxide
  • MoN x nitridation
  • MoSi x siliconcidation
  • a thin film made in accordance with the invention can be used in thin film transistor (TFT)-liquid crystal display (LCD) applications.
  • TFT thin film transistor
  • LCD liquid crystal display
  • the invention encompasses a thin film used in solar cell applications, sensor applications, semiconductor devices and metal gates for CMOS technology (complementary metal :oxide semiconductor).
  • the invention is directed to a TFT-LCD device containing molybdenum thin films that serve as gate electrodes that have excellent uniformity.
  • Another embodiment is directed to thin film solar cell applications, where the invention encompasses solar cells in which Mo thin films function as a back contact for the following illustrative device structure: MoO 2 containing front contact/p-layer/junction layer/n-layer/Mo back contact, in which the p-layer releases electrons when it is struck by light, resulting in a lack of electrons, and n-layer is negatively charged.
  • an MoO 3 film can be produced by reactive sputtering from a Mo target for use as a gas sensor, such as for ammonia detection.
  • the invention encompasses either molybdenum or nitrided molybdenum films used as gate devices for CMOS processes (complementary metal oxide semiconductor) with a tunable work function depending on the nitrogen-doping level.
  • MoO x film can be used to form a black matrix by reactive sputtering from molybdenum sputtering target to enhance image contrast.
  • molybdenum sputtering target to enhance image contrast.
  • Cr or CrO 2 target is used to form a black matrix in Flat Panel Display, which has both health and environmental concerns.

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US10/931,203 US20060042728A1 (en) 2004-08-31 2004-08-31 Molybdenum sputtering targets
EP20090154926 EP2065480B1 (en) 2004-08-31 2005-08-29 Molybdenum tubular sputtering targets with uniform grain size and texture
AU2005279847A AU2005279847A1 (en) 2004-08-31 2005-08-29 Molybdenum tubular sputtering targets with uniform grain size and texture
CA002577162A CA2577162A1 (en) 2004-08-31 2005-08-29 Molybdenum sputtering targets
KR1020137013387A KR20130080054A (ko) 2004-08-31 2005-08-29 몰리브덴 스퍼터링 타겟
EP05792638A EP1784518A2 (en) 2004-08-31 2005-08-29 Molybdenum tubular sputtering targets with uniform grain size and texture
RU2007111556/02A RU2007111556A (ru) 2004-08-31 2005-08-29 Молибденовые мишени распыления
US11/574,469 US8088232B2 (en) 2004-08-31 2005-08-29 Molybdenum tubular sputtering targets with uniform grain size and texture
KR1020077007294A KR20070057225A (ko) 2004-08-31 2005-08-29 몰리브덴 스퍼터링 타겟
CNB2005800372658A CN100549202C (zh) 2004-08-31 2005-08-29 钼溅射靶
MX2007002290A MX2007002290A (es) 2004-08-31 2005-08-29 Dianas de pulverizacion de molibdeno.
PCT/US2005/030852 WO2006026621A2 (en) 2004-08-31 2005-08-29 Molybdenum tubular sputtering targets with uniform grain size and texture
JP2007530275A JP2008511757A (ja) 2004-08-31 2005-08-29 モリブデンスパッタリングターゲット
BRPI0515132-5A BRPI0515132A (pt) 2004-08-31 2005-08-29 alvos para faiscamento de molibdênio
PL09154926T PL2065480T3 (pl) 2004-08-31 2005-08-29 Rurowe molibdenowe tarcze do napylania o jednolitej wielkości ziarna i teksturze
TW94129572A TWI377261B (en) 2004-08-31 2005-08-30 Molybdenum sputtering targets
IL181454A IL181454A0 (en) 2004-08-31 2007-02-20 Molybdenum sputtering targets
US13/340,973 US8425833B2 (en) 2004-08-31 2011-12-30 Methods of forming molybdenum sputtering targets
US13/849,918 US9017600B2 (en) 2004-08-31 2013-03-25 Methods of forming molybdenum sputtering targets
US14/608,995 US9309591B2 (en) 2004-08-31 2015-01-29 Methods of depositing thin films using molybdenum sputtering targets
US15/061,566 US9926623B2 (en) 2004-08-31 2016-03-04 Methods of forming molybdenum sputtering targets

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PCT/US2005/030852 Continuation WO2006026621A2 (en) 2004-08-31 2005-08-29 Molybdenum tubular sputtering targets with uniform grain size and texture
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US13/849,918 Expired - Fee Related US9017600B2 (en) 2004-08-31 2013-03-25 Methods of forming molybdenum sputtering targets
US14/608,995 Expired - Fee Related US9309591B2 (en) 2004-08-31 2015-01-29 Methods of depositing thin films using molybdenum sputtering targets
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US14/608,995 Expired - Fee Related US9309591B2 (en) 2004-08-31 2015-01-29 Methods of depositing thin films using molybdenum sputtering targets
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Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060201589A1 (en) * 2005-03-11 2006-09-14 Honeywell International Inc. Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components
US20070086909A1 (en) * 2005-10-14 2007-04-19 Plansee Se Method of producing a tubular target
US20080105542A1 (en) * 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
US20080145688A1 (en) * 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
WO2008089188A1 (en) * 2007-01-16 2008-07-24 H.C. Starck Inc. High density refractory metals & alloys sputtering targets
US20080216602A1 (en) * 2005-05-05 2008-09-11 H. C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
US20080257724A1 (en) * 2006-12-05 2008-10-23 Bjoern Pigur Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
WO2008137689A2 (en) * 2007-05-04 2008-11-13 H.C. Starck Inc. Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made there from
US20080314737A1 (en) * 2005-10-20 2008-12-25 Mark Gaydos Methods of Making Molybdenium Titanium Sputtering Plates and Targets
WO2009134771A1 (en) * 2008-04-28 2009-11-05 H. C. Starck Inc. Molybdenum-niobium alloys, sputtering targets containing such alloys, methods of making such targets, thin films prepared therefrom and uses thereof
US20100015467A1 (en) * 2006-11-07 2010-01-21 H.C. Starck Gmbh & Co., Kg Method for coating a substrate and coated product
US20100073688A1 (en) * 2001-04-10 2010-03-25 Kla-Tencor Technologies Corporation Periodic patterns and technique to control misalignment between two layers
US20100086800A1 (en) * 2008-10-06 2010-04-08 H.C. Starck Inc. Method of manufacturing bulk metallic structures with submicron grain sizes and structures made with such method
US20100108501A1 (en) * 2007-01-12 2010-05-06 Nippon Steel Materials Co., Ltd Mo-based sputtering target plate and method for manufacturing the same
US20100272889A1 (en) * 2006-10-03 2010-10-28 H.C. Starch Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US20110147208A1 (en) * 2008-01-11 2011-06-23 Climax Engineered Materials, Llc Sodium/molybdenum metal articles and methods for making the same
US20120063947A1 (en) * 2009-04-10 2012-03-15 Saint-Gobain Coating Solutions Molybdenum-based target and process for producing a target by thermal spraying
WO2012055485A1 (de) * 2010-10-28 2012-05-03 Oerlikon Trading Ag, Trübbach Molybdänmonoxidschichten und deren herstellung mittels pvd
CN102617044A (zh) * 2012-03-05 2012-08-01 湖北大学 水热法制备垂直取向锐钛矿氧化钛薄膜的方法及其气敏传感器
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
CN103140600A (zh) * 2010-09-30 2013-06-05 日立金属株式会社 钼靶的制造方法
US20130149553A1 (en) * 2006-03-07 2013-06-13 Global Advanced Metals, Usa, Inc. Methods of producing deformed metal articles
CN103733270A (zh) * 2011-04-10 2014-04-16 阿尔伯塔大学董事会 由钼金属靶材生产锝
US8703233B2 (en) 2011-09-29 2014-04-22 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets by cold spray
US8802191B2 (en) 2005-05-05 2014-08-12 H. C. Starck Gmbh Method for coating a substrate surface and coated product
US9017762B2 (en) 2010-06-30 2015-04-28 H.C. Starck, Inc. Method of making molybdenum-containing targets comprising three metal elements
WO2015061816A1 (de) * 2013-10-29 2015-05-07 Plansee Se Sputtering target und verfahren zur herstellung
US9150955B2 (en) 2010-06-30 2015-10-06 H.C. Starck Inc. Method of making molybdenum containing targets comprising molybdenum, titanium, and tantalum or chromium
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
US9334562B2 (en) 2011-05-10 2016-05-10 H.C. Starck Inc. Multi-block sputtering target and associated methods and articles
US9373804B2 (en) * 2012-05-24 2016-06-21 Agency For Science, Technology And Research Optoelectronic device comprising a hybrid molybdenum (VI) oxide film
CN107236934A (zh) * 2016-03-28 2017-10-10 Ｊｘ金属株式会社 圆筒型溅射靶及其制造方法
US10510900B2 (en) 2016-09-07 2019-12-17 Samsung Display Co., Ltd. Display device
CN111254396A (zh) * 2020-01-21 2020-06-09 洛阳高新四丰电子材料有限公司 一种钼钨合金溅射靶材的制备方法
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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060042728A1 (en) 2004-08-31 2006-03-02 Brad Lemon Molybdenum sputtering targets
US8250895B2 (en) 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
US9095885B2 (en) * 2007-08-06 2015-08-04 H.C. Starck Inc. Refractory metal plates with improved uniformity of texture
KR100936016B1 (ko) * 2007-11-23 2010-01-11 한양대학교 산학협력단 초미세 결정립 Ｍｏ 스퍼터링 타겟의 제조방법, 및 이로써얻어진 Ｍｏ 스퍼터링 타겟
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WO2011004887A1 (ja) * 2009-07-09 2011-01-13 株式会社東芝 高純度モリブデン粉末およびその製造方法
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JP2012237056A (ja) * 2011-04-28 2012-12-06 Hitachi Metals Ltd ＭｏＣｒターゲット材の製造方法およびＭｏＣｒターゲット材
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5435965A (en) * 1991-02-19 1995-07-25 Mitsubishi Materials Corporation Sputtering target and method for manufacturing same
US6238494B1 (en) * 1997-07-11 2001-05-29 Johnson Matthey Electronics Inc. Polycrystalline, metallic sputtering target
US6238526B1 (en) * 1999-02-14 2001-05-29 Advanced Ion Technology, Inc. Ion-beam source with channeling sputterable targets and a method for channeled sputtering
US20050279630A1 (en) * 2004-06-16 2005-12-22 Dynamic Machine Works, Inc. Tubular sputtering targets and methods of flowforming the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066425A (ja) * 1983-09-22 1985-04-16 Nippon Telegr & Teleph Corp <Ntt> Ｌｓｉ電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法
JP2757287B2 (ja) * 1989-11-02 1998-05-25 日立金属株式会社 タングステンターゲットの製造方法
JP3769761B2 (ja) * 1994-04-28 2006-04-26 住友化学株式会社 アルミニウム合金単結晶ターゲットおよびその製造方法
JP3743740B2 (ja) * 1998-07-27 2006-02-08 日立金属株式会社 Ｍｏ系焼結ターゲット材
US6183614B1 (en) 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6342133B2 (en) 2000-03-14 2002-01-29 Novellus Systems, Inc. PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
JP3748221B2 (ja) * 2001-10-23 2006-02-22 日立金属株式会社 Ｍｏ系スパッタリング用ターゲットおよびその製造方法
KR100686494B1 (ko) 2002-12-30 2007-02-23 엘지.필립스 엘시디 주식회사 금속막 증착을 위한 스퍼터와 스퍼터를 이용한 액정 표시장치의 제조법
US20060042728A1 (en) 2004-08-31 2006-03-02 Brad Lemon Molybdenum sputtering targets
US8088232B2 (en) 2004-08-31 2012-01-03 H.C. Starck Inc. Molybdenum tubular sputtering targets with uniform grain size and texture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5435965A (en) * 1991-02-19 1995-07-25 Mitsubishi Materials Corporation Sputtering target and method for manufacturing same
US6238494B1 (en) * 1997-07-11 2001-05-29 Johnson Matthey Electronics Inc. Polycrystalline, metallic sputtering target
US6238526B1 (en) * 1999-02-14 2001-05-29 Advanced Ion Technology, Inc. Ion-beam source with channeling sputterable targets and a method for channeled sputtering
US20050279630A1 (en) * 2004-06-16 2005-12-22 Dynamic Machine Works, Inc. Tubular sputtering targets and methods of flowforming the same

Cited By (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100073688A1 (en) * 2001-04-10 2010-03-25 Kla-Tencor Technologies Corporation Periodic patterns and technique to control misalignment between two layers
US20060201589A1 (en) * 2005-03-11 2006-09-14 Honeywell International Inc. Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components
US7910051B2 (en) 2005-05-05 2011-03-22 H.C. Starck Gmbh Low-energy method for fabrication of large-area sputtering targets
US20080216602A1 (en) * 2005-05-05 2008-09-11 H. C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
US8802191B2 (en) 2005-05-05 2014-08-12 H. C. Starck Gmbh Method for coating a substrate surface and coated product
US8900340B2 (en) 2005-10-14 2014-12-02 Plansee Se Tubular target and production method
US20070086909A1 (en) * 2005-10-14 2007-04-19 Plansee Se Method of producing a tubular target
US9890451B2 (en) 2005-10-14 2018-02-13 Plansee Se Tubular target and production method
US20110097236A1 (en) * 2005-10-20 2011-04-28 H. C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
US20080314737A1 (en) * 2005-10-20 2008-12-25 Mark Gaydos Methods of Making Molybdenium Titanium Sputtering Plates and Targets
US8911528B2 (en) 2005-10-20 2014-12-16 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
EP2316595A1 (en) * 2005-10-20 2011-05-04 H. C. Starck Inc Methods of making molybdenum titanium sputtering plates and targets
US8974611B2 (en) * 2006-03-07 2015-03-10 Global Advanced Metals, Usa, Inc. Methods of producing deformed metal articles
US20130149553A1 (en) * 2006-03-07 2013-06-13 Global Advanced Metals, Usa, Inc. Methods of producing deformed metal articles
US8715386B2 (en) 2006-10-03 2014-05-06 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US8226741B2 (en) 2006-10-03 2012-07-24 H.C. Starck, Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US20100272889A1 (en) * 2006-10-03 2010-10-28 H.C. Starch Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US20100015467A1 (en) * 2006-11-07 2010-01-21 H.C. Starck Gmbh & Co., Kg Method for coating a substrate and coated product
US20080105542A1 (en) * 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
US20080257724A1 (en) * 2006-12-05 2008-10-23 Bjoern Pigur Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US9095932B2 (en) 2006-12-13 2015-08-04 H.C. Starck Inc. Methods of joining metallic protective layers
US8002169B2 (en) 2006-12-13 2011-08-23 H.C. Starck, Inc. Methods of joining protective metal-clad structures
US8113413B2 (en) 2006-12-13 2012-02-14 H.C. Starck, Inc. Protective metal-clad structures
US20080145688A1 (en) * 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8448840B2 (en) 2006-12-13 2013-05-28 H.C. Starck Inc. Methods of joining metallic protective layers
US8777090B2 (en) 2006-12-13 2014-07-15 H.C. Starck Inc. Methods of joining metallic protective layers
US20100108501A1 (en) * 2007-01-12 2010-05-06 Nippon Steel Materials Co., Ltd Mo-based sputtering target plate and method for manufacturing the same
WO2008089188A1 (en) * 2007-01-16 2008-07-24 H.C. Starck Inc. High density refractory metals & alloys sputtering targets
WO2008137689A2 (en) * 2007-05-04 2008-11-13 H.C. Starck Inc. Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made there from
US9783882B2 (en) 2007-05-04 2017-10-10 H.C. Starck Inc. Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom
US8883250B2 (en) 2007-05-04 2014-11-11 H.C. Starck Inc. Methods of rejuvenating sputtering targets
US8491959B2 (en) 2007-05-04 2013-07-23 H.C. Starck Inc. Methods of rejuvenating sputtering targets
WO2008137689A3 (en) * 2007-05-04 2009-04-30 Starck H C Inc Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made there from
US20110147208A1 (en) * 2008-01-11 2011-06-23 Climax Engineered Materials, Llc Sodium/molybdenum metal articles and methods for making the same
US8465692B2 (en) * 2008-01-11 2013-06-18 Climax Engineered Materials, Llc Sodium/molybdenum composite metal articles and methods for producing metal articles
WO2009134771A1 (en) * 2008-04-28 2009-11-05 H. C. Starck Inc. Molybdenum-niobium alloys, sputtering targets containing such alloys, methods of making such targets, thin films prepared therefrom and uses thereof
US8470396B2 (en) 2008-09-09 2013-06-25 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8961867B2 (en) 2008-09-09 2015-02-24 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8043655B2 (en) 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
US20100086800A1 (en) * 2008-10-06 2010-04-08 H.C. Starck Inc. Method of manufacturing bulk metallic structures with submicron grain sizes and structures made with such method
US9951413B2 (en) * 2009-04-10 2018-04-24 Saint-Gobain Coating Solutions Molybdenum-based target and process for producing a target by thermal spraying
KR101754430B1 (ko) 2009-04-10 2017-07-05 생-고뱅 코팅 솔루션스 몰리브덴을 기재로 한 타겟 및 열 투사에 의한 타겟의 제조 방법
US20120063947A1 (en) * 2009-04-10 2012-03-15 Saint-Gobain Coating Solutions Molybdenum-based target and process for producing a target by thermal spraying
US9945023B2 (en) 2010-06-30 2018-04-17 H.C. Starck, Inc. Touch screen device comprising Mo-based film layer and methods thereof
US9150955B2 (en) 2010-06-30 2015-10-06 H.C. Starck Inc. Method of making molybdenum containing targets comprising molybdenum, titanium, and tantalum or chromium
US9017762B2 (en) 2010-06-30 2015-04-28 H.C. Starck, Inc. Method of making molybdenum-containing targets comprising three metal elements
US9837253B2 (en) 2010-06-30 2017-12-05 H.C. Starck Inc. Molybdenum containing targets for touch screen device
CN103140600A (zh) * 2010-09-30 2013-06-05 日立金属株式会社 钼靶的制造方法
US20130189145A1 (en) * 2010-09-30 2013-07-25 Hitachi Metals, Ltd. Method for producing molybdenum target
US9689067B2 (en) * 2010-09-30 2017-06-27 Hitachi Metals, Ltd. Method for producing molybdenum target
US9822322B2 (en) 2010-10-28 2017-11-21 Oerlikon Surface Solutions Ag, Pfaffikon Molybdenum monoxide layers, and production thereof using PVD
WO2012055485A1 (de) * 2010-10-28 2012-05-03 Oerlikon Trading Ag, Trübbach Molybdänmonoxidschichten und deren herstellung mittels pvd
CN103733270A (zh) * 2011-04-10 2014-04-16 阿尔伯塔大学董事会 由钼金属靶材生产锝
US9334562B2 (en) 2011-05-10 2016-05-10 H.C. Starck Inc. Multi-block sputtering target and associated methods and articles
US9922808B2 (en) 2011-05-10 2018-03-20 H.C. Starck Inc. Multi-block sputtering target and associated methods and articles
US8734896B2 (en) 2011-09-29 2014-05-27 H.C. Starck Inc. Methods of manufacturing high-strength large-area sputtering targets
US9293306B2 (en) 2011-09-29 2016-03-22 H.C. Starck, Inc. Methods of manufacturing large-area sputtering targets using interlocking joints
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
US9120183B2 (en) 2011-09-29 2015-09-01 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets
US9108273B2 (en) 2011-09-29 2015-08-18 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets using interlocking joints
US8703233B2 (en) 2011-09-29 2014-04-22 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets by cold spray
CN102617044A (zh) * 2012-03-05 2012-08-01 湖北大学 水热法制备垂直取向锐钛矿氧化钛薄膜的方法及其气敏传感器
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
US10643827B2 (en) 2012-05-09 2020-05-05 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
US9373804B2 (en) * 2012-05-24 2016-06-21 Agency For Science, Technology And Research Optoelectronic device comprising a hybrid molybdenum (VI) oxide film
WO2015061816A1 (de) * 2013-10-29 2015-05-07 Plansee Se Sputtering target und verfahren zur herstellung
CN107236934A (zh) * 2016-03-28 2017-10-10 Ｊｘ金属株式会社 圆筒型溅射靶及其制造方法
US10510900B2 (en) 2016-09-07 2019-12-17 Samsung Display Co., Ltd. Display device
CN111254396A (zh) * 2020-01-21 2020-06-09 洛阳高新四丰电子材料有限公司 一种钼钨合金溅射靶材的制备方法
CN113463042A (zh) * 2021-05-31 2021-10-01 洛阳科威钨钼有限公司 一种钼钛合金溅射镀膜靶材的制备方法
CN113996819A (zh) * 2021-09-30 2022-02-01 宁波江丰电子材料股份有限公司 一种圆形钼靶材组件的溅射弧面加工方法
CN114131026A (zh) * 2021-12-08 2022-03-04 西安瑞福莱钨钼有限公司 一种模压法生产钼管坯的工艺
CN114411103A (zh) * 2022-01-18 2022-04-29 宁波江丰钨钼材料有限公司 一种大尺寸钼靶材及其制备方法与应用

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WO2006026621A3 (en) 2006-07-13
EP1784518A2 (en) 2007-05-16
WO2006026621A2 (en) 2006-03-09
JP2008511757A (ja) 2008-04-17
US8425833B2 (en) 2013-04-23
CN100549202C (zh) 2009-10-14
EP2065480A1 (en) 2009-06-03
RU2007111556A (ru) 2008-10-10
US9926623B2 (en) 2018-03-27
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US9017600B2 (en) 2015-04-28
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US20160186311A1 (en) 2016-06-30
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US9309591B2 (en) 2016-04-12
PL2065480T3 (pl) 2012-12-31
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BRPI0515132A (pt) 2008-07-08
US20130224059A1 (en) 2013-08-29

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