US20050202183A1 - Plasma processing system, plasma processing method, plasma film deposition system, and plasma film deposition method - Google Patents

Plasma processing system, plasma processing method, plasma film deposition system, and plasma film deposition method Download PDF

Info

Publication number
US20050202183A1
US20050202183A1 US10/514,017 US51401704A US2005202183A1 US 20050202183 A1 US20050202183 A1 US 20050202183A1 US 51401704 A US51401704 A US 51401704A US 2005202183 A1 US2005202183 A1 US 2005202183A1
Authority
US
United States
Prior art keywords
plasma
antenna
supply means
power supply
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/514,017
Other languages
English (en)
Inventor
Ryuichi Matsuda
Tadashi Shimazu
Masahiko Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Assigned to MITSUBISHI HEAVY INDUSTRIES, LTD. reassignment MITSUBISHI HEAVY INDUSTRIES, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INOUE, MASAHIKO, MATSUDA, RYUICHI, SHIMAZU, TADASHI
Publication of US20050202183A1 publication Critical patent/US20050202183A1/en
Priority to US11/797,601 priority Critical patent/US8662010B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Definitions

  • the plasma processing apparatus can be constituted such that lines of magnetic force heading in a direction opposite to the direction of lines of magnetic force appearing at the site of the antenna are generated at the site of the second antenna, and even when a uniform plasma is generated over a wide range within the tubular container, the magnetic flux density in the direction of the wall surface can be rendered low.
  • a tubular container accommodating a substrate
  • the plasma film deposition method of the present invention is a plasma film deposition method which supplies power from above a top of a ceiling surface of a tubular container to generate a plasma within the tubular container, and produces a film on a surface of a substrate by atoms and molecules excited and activated there, characterized by
  • a distance from a lower surface of the antenna to the substrate is set at 190 mm or more in order to locate the substrate in a region where an electron temperature is 1 electronvolt or less.
  • the plasma processing method of the present invention is a plasma processing method which supplies power from above a top of a ceiling surface of a tubular container to generate a plasma within the tubular container, and applies processing to a surface of a substrate by atoms and molecules excited and activated there, characterized by
  • the substrate 6 is placed on the bearing portion 7 of the wafer support base 5 , and held (by, for example, an electrostatic chuck).
  • a predetermined flow rate of the source gas is supplied through the gas supply nozzles 13 into the film deposition chamber 3
  • a predetermined flow rate of the auxiliary gas is supplied through the auxiliary gas supply nozzles into the film deposition chamber 3 , with the interior of the film deposition chamber 3 being set at a predetermined pressure suitable for the conditions for film deposition.
  • electric power is supplied from the high frequency power source 12 to the high frequency antenna 11 to generate a high frequency wave.
  • a high frequency antenna 11 as an antenna, is the same as that in FIGS. 1 and 2 in terms of its feature, and is in the form of a flat coil.
  • a high frequency power source 12 is connected to the site of the antenna 11 a
  • a second high frequency power source 21 as second power supply means is connected to the site of a second antenna 11 b .
  • An electric current is supplied from the second high frequency power source 21 to the site of the second antenna 11 b in a state of connection opposite to that for the site of the antenna 11 a .
  • An electric current of a phase opposite to that of an electric current fed from the high frequency power source 12 to the high frequency antenna 22 is supplied from the second high frequency power source 24 to the second antenna 23 via the phase shifter 25 . Because of this feature, lines of magnetic force heading in a direction opposite to the direction of lines of magnetic force appearing at the site of the high frequency antenna 22 are generated at the site of the second antenna 23 , as in the embodiment shown in FIG. 1 .
  • the lines of magnetic force passing through the wall (tubular surface) of the container 2 are merged with the lines of magnetic force heading in the opposite direction to decrease the lines of magnetic force passing through the wall (tubular surface) of the container 2 .
  • the magnetic flux density in the direction of the wall surface at the position of the wall of the container 2 is lowered. This resolves the problem that the electrons and ions impinge on the wall of the container 2 , thereby causing overheating or causing the occurrence of particles by an etching action.
  • the second antenna 32 is connected to the high frequency power source 12 in a state opposite to the state of connection of the antenna 31 to the high frequency power source 12 , namely, such that the connected side and the grounded side for the second antenna 32 are opposite to those for the antenna 31 .
  • the substrate is located in a region where the electron temperature is low even though the electron density is high. Since the region has a low electron temperature, device destruction due to the charging effect can be suppressed.
  • plasma film deposition apparatus plasma CVD apparatus
  • the high frequency source with an output of 2 kW to 15 kW (e.g., 5 kW) and a frequency of 10 MHz to 30 MHz (e.g., 13.56 MHz) is connected to the high frequency antenna 91 .
  • the container 82 is provided with a carry-in/carry-out port for the substrate 86 , although the carry-in/carry-out port is not shown. Through this carry-in/carry-out port, the substrate 86 is carried from a transport chamber (not shown) into the container 82 , and carried out of the container 82 to the transport chamber.
US10/514,017 2002-06-19 2003-06-17 Plasma processing system, plasma processing method, plasma film deposition system, and plasma film deposition method Abandoned US20050202183A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/797,601 US8662010B2 (en) 2002-06-19 2007-05-04 Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002178129A JP3820188B2 (ja) 2002-06-19 2002-06-19 プラズマ処理装置及びプラズマ処理方法
JP2002-178129 2002-06-19
JP2002-351250 2002-12-03
JP2002351250A JP4052454B2 (ja) 2002-06-19 2002-12-03 酸化シリコン膜又は窒化シリコン膜の製造方法
PCT/JP2003/007650 WO2004001822A1 (fr) 2002-06-19 2003-06-17 Systeme de traitement au plasma, procede de traitement au plasma, systeme de depot de film au plasma et procede de depot de film au plasma

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/797,601 Division US8662010B2 (en) 2002-06-19 2007-05-04 Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method

Publications (1)

Publication Number Publication Date
US20050202183A1 true US20050202183A1 (en) 2005-09-15

Family

ID=30002232

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/514,017 Abandoned US20050202183A1 (en) 2002-06-19 2003-06-17 Plasma processing system, plasma processing method, plasma film deposition system, and plasma film deposition method
US11/797,601 Expired - Fee Related US8662010B2 (en) 2002-06-19 2007-05-04 Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method

Family Applications After (1)

Application Number Title Priority Date Filing Date
US11/797,601 Expired - Fee Related US8662010B2 (en) 2002-06-19 2007-05-04 Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method

Country Status (6)

Country Link
US (2) US20050202183A1 (fr)
EP (2) EP2224468B1 (fr)
JP (2) JP3820188B2 (fr)
KR (3) KR100820615B1 (fr)
TW (2) TWI276163B (fr)
WO (1) WO2004001822A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080020528A1 (en) * 2006-07-21 2008-01-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and method of manufacturing nonvolatile semiconductor storage device
US20080017317A1 (en) * 2006-07-24 2008-01-24 Samsung Electronics Co., Ltd. Substrate processing apparatus
US8288294B2 (en) 2008-06-30 2012-10-16 Mitsubishi Heavy Industries, Ltd. Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device
US20180277340A1 (en) * 2017-03-24 2018-09-27 Yang Yang Plasma reactor with electron beam of secondary electrons
US20190252153A1 (en) * 2018-02-14 2019-08-15 Research & Business Foundation Sungkyunkwan University Apparatus for generating plasma and apparatus for treating substrate having the same
US10453676B2 (en) 2014-12-25 2019-10-22 Kokusai Electric Corporation Semiconductor device manufacturing method and recording medium
US10544505B2 (en) 2017-03-24 2020-01-28 Applied Materials, Inc. Deposition or treatment of diamond-like carbon in a plasma reactor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408734B (zh) * 2005-04-28 2013-09-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
JP5723130B2 (ja) * 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5800532B2 (ja) * 2011-03-03 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10541183B2 (en) 2012-07-19 2020-01-21 Texas Instruments Incorporated Spectral reflectometry window heater
JP6232953B2 (ja) * 2013-11-11 2017-11-22 富士通セミコンダクター株式会社 半導体装置の製造装置および半導体装置の製造方法
CN205741208U (zh) * 2015-09-16 2016-11-30 应用材料公司 用于改进的等离子体处理腔室的系统和设备

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
US5824158A (en) * 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US5936352A (en) * 1995-11-28 1999-08-10 Nec Corporation Plasma processing apparatus for producing plasma at low electron temperatures
US6093457A (en) * 1997-03-27 2000-07-25 Matsushita Electric Industrial Co., Ltd. Method for plasma processing
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6350347B1 (en) * 1993-01-12 2002-02-26 Tokyo Electron Limited Plasma processing apparatus
US6401652B1 (en) * 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6576063B2 (en) * 2000-03-30 2003-06-10 Hitachi Kokusai Electric, Inc. Apparatus and method for use in manufacturing a semiconductor device
US20030232513A1 (en) * 2002-06-12 2003-12-18 Kraus Philip Allan Plasma method and apparatus for processing a substrate

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JP3005006B2 (ja) 1989-09-29 2000-01-31 三菱製紙株式会社 インクジェット記録媒体
EP0489407A3 (en) * 1990-12-03 1992-07-22 Applied Materials, Inc. Plasma reactor using uhf/vhf resonant antenna source, and processes
JP3249193B2 (ja) 1992-09-09 2002-01-21 株式会社ダイヘン プラズマ処理装置
JP3172757B2 (ja) 1993-05-01 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置
JP3172340B2 (ja) 1993-08-12 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置
JPH07201813A (ja) 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置の製造方法およびその製造装置
JPH07245195A (ja) * 1994-03-07 1995-09-19 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
JP3140934B2 (ja) * 1994-08-23 2001-03-05 東京エレクトロン株式会社 プラズマ装置
JPH08279493A (ja) * 1995-04-04 1996-10-22 Anelva Corp プラズマ処理装置
JP3192352B2 (ja) 1995-06-16 2001-07-23 東京エレクトロン株式会社 プラズマ処理装置
US5874704A (en) 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
US5716451A (en) * 1995-08-17 1998-02-10 Tokyo Electron Limited Plasma processing apparatus
JP2937907B2 (ja) * 1995-11-28 1999-08-23 日本電気株式会社 プラズマ発生装置
JP3501910B2 (ja) 1996-04-23 2004-03-02 東京エレクトロン株式会社 プラズマ処理装置
EP0805475B1 (fr) 1996-05-02 2003-02-19 Tokyo Electron Limited Appareil de traitement par plasma
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5897712A (en) 1996-07-16 1999-04-27 Applied Materials, Inc. Plasma uniformity control for an inductive plasma source
JP3736016B2 (ja) 1997-03-27 2006-01-18 松下電器産業株式会社 プラズマ処理方法及び装置
JP3726477B2 (ja) * 1998-03-16 2005-12-14 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6085688A (en) * 1998-03-27 2000-07-11 Applied Materials, Inc. Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor
JP2000068254A (ja) * 1998-08-25 2000-03-03 Matsushita Electronics Industry Corp プラズマ処理方法とプラズマ処理装置
JP3764594B2 (ja) 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
KR100311234B1 (ko) * 1999-01-18 2001-11-02 학교법인 인하학원 고품위 유도결합 플라즈마 리액터
TW469534B (en) 1999-02-23 2001-12-21 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
KR100338057B1 (ko) * 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
KR100797423B1 (ko) * 2000-05-17 2008-01-23 가부시키가이샤 아이에이치아이 플라즈마 ｃｖｄ 장치 및 방법
KR20010108968A (ko) * 2000-06-01 2001-12-08 황 철 주 플라즈마 공정장치
JP2002008996A (ja) * 2000-06-23 2002-01-11 Mitsubishi Heavy Ind Ltd 給電アンテナ及び給電方法
EP1301938A2 (fr) * 2000-07-06 2003-04-16 Applied Materials, Inc. Reacteur a plasma a antenne a enroulements de conducteurs paralleles et symetriques
JP2002110565A (ja) 2000-10-02 2002-04-12 Sony Corp プラズマ処理装置及び処理方法、並びに半導体装置の製造方法
US6721655B1 (en) 2001-03-14 2004-04-13 Mitsubishi Denki Kabushiki Kaisha Vehicle travel guide device and vehicle travel guide method

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6350347B1 (en) * 1993-01-12 2002-02-26 Tokyo Electron Limited Plasma processing apparatus
US5824158A (en) * 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US6016131A (en) * 1995-08-16 2000-01-18 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US5936352A (en) * 1995-11-28 1999-08-10 Nec Corporation Plasma processing apparatus for producing plasma at low electron temperatures
US6093457A (en) * 1997-03-27 2000-07-25 Matsushita Electric Industrial Co., Ltd. Method for plasma processing
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
US6463875B1 (en) * 1998-06-30 2002-10-15 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
US6576063B2 (en) * 2000-03-30 2003-06-10 Hitachi Kokusai Electric, Inc. Apparatus and method for use in manufacturing a semiconductor device
US6401652B1 (en) * 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US20030232513A1 (en) * 2002-06-12 2003-12-18 Kraus Philip Allan Plasma method and apparatus for processing a substrate

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080020528A1 (en) * 2006-07-21 2008-01-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and method of manufacturing nonvolatile semiconductor storage device
US8895388B2 (en) * 2006-07-21 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatment
US20080017317A1 (en) * 2006-07-24 2008-01-24 Samsung Electronics Co., Ltd. Substrate processing apparatus
US8343309B2 (en) 2006-07-24 2013-01-01 Samsung Electronics Co., Ltd. Substrate processing apparatus
US8288294B2 (en) 2008-06-30 2012-10-16 Mitsubishi Heavy Industries, Ltd. Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device
US10453676B2 (en) 2014-12-25 2019-10-22 Kokusai Electric Corporation Semiconductor device manufacturing method and recording medium
US20180277340A1 (en) * 2017-03-24 2018-09-27 Yang Yang Plasma reactor with electron beam of secondary electrons
US10544505B2 (en) 2017-03-24 2020-01-28 Applied Materials, Inc. Deposition or treatment of diamond-like carbon in a plasma reactor
US20190252153A1 (en) * 2018-02-14 2019-08-15 Research & Business Foundation Sungkyunkwan University Apparatus for generating plasma and apparatus for treating substrate having the same
US10784082B2 (en) * 2018-02-14 2020-09-22 Research & Business Foundation Sungkyunkwan University Apparatus for generating plasma and apparatus for treating substrate having the same

Also Published As

Publication number Publication date
TW200415710A (en) 2004-08-16
JP2004022935A (ja) 2004-01-22
TWI276163B (en) 2007-03-11
TW200625417A (en) 2006-07-16
JP4052454B2 (ja) 2008-02-27
KR20060084067A (ko) 2006-07-21
TWI305375B (fr) 2009-01-11
JP3820188B2 (ja) 2006-09-13
EP1515362B1 (fr) 2012-07-04
EP1515362A4 (fr) 2009-07-15
US20070224364A1 (en) 2007-09-27
KR100806550B1 (ko) 2008-02-27
EP2224468A1 (fr) 2010-09-01
WO2004001822A1 (fr) 2003-12-31
KR20070116184A (ko) 2007-12-06
JP2004186402A (ja) 2004-07-02
KR100820615B1 (ko) 2008-04-08
KR20050012818A (ko) 2005-02-02
KR100661781B1 (ko) 2006-12-28
EP2224468B1 (fr) 2013-08-14
EP1515362A1 (fr) 2005-03-16
US8662010B2 (en) 2014-03-04

Similar Documents

Publication Publication Date Title
US8662010B2 (en) Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method
US6422172B1 (en) Plasma processing apparatus and plasma processing method
KR100554116B1 (ko) 멀티슬롯 안테나를 이용한 표면파 플라즈마 처리장치
US20100098882A1 (en) Plasma source for chamber cleaning and process
EP0670666B1 (fr) Appareil de production de plasma et appareil de traitement par plasma
JP2003243378A (ja) 解離及びイオン化の空間的制御のためのプラズマ処理装置
JP2001035839A (ja) プラズマ生成装置および半導体製造方法
WO2002052628A1 (fr) Procede et appareil de traitement au plasma
JPH06267903A (ja) プラズマ装置
US20030010453A1 (en) Plasma processing apparatus and plasma processing method
TW201842532A (zh) 有機材料的自我限制蝕刻之實行程序
JP3790410B2 (ja) パーティクル低減方法
JP3955351B2 (ja) プラズマ処理装置
JP2001345312A (ja) プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法
JP2000252099A (ja) 整合器、プラズマ処理方法及び装置
JPH1022279A (ja) 誘導結合型プラズマｃｖｄ装置
TWI797833B (zh) 用於使用電容耦合電漿的氧化矽間隙填充的沉積方法
US20230207292A1 (en) Plasma processing apparatus and semiconductor device manufacturing method
KR20090035903A (ko) 플라즈마 기판 처리 장치
JP2000144422A (ja) シリコン製膜方法及びシリコン製膜装置
JP2002329716A (ja) プラズマ処理装置、プラズマ処理方法および素子の製造方法
JP2628529B2 (ja) プラズマｃｖｄ装置
JP2001342567A (ja) プラズマ処理装置
JPH11251092A (ja) 反応性イオンエッチング装置
JPH1070892A (ja) 静電チャック板とその製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: MITSUBISHI HEAVY INDUSTRIES, LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MATSUDA, RYUICHI;SHIMAZU, TADASHI;INOUE, MASAHIKO;REEL/FRAME:017185/0553

Effective date: 20041112

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION