200415710 玖、發明說明： 【發明所屬之技術領域】 本發明係關於-種用以產生電衆而對於基板施加處理之 電漿處理裝置及電漿處理方法。 本發：係關於一種用以產生電漿而以氣相生長法對於基 板表面實施成膜之電漿成膜裝置及電漿成膜方法。 土 【先前技術】 目則在半導體製造方面，有—種使用電聚cvd(化學氣相 沉積）裝置之成膜方法已為眾所周知。電聚CVD裝置係—種 將作為膜材料之材料氣體導入於筒狀容器内之成膜室中， 並由高頻天線入射高頻’使其成為電漿狀態，❼以電漿中 活性的受激料來促進基板表面之化學性反應，藉以進行 成膜之裝置。在電漿CVD裝置則在與基板相對的天花面上 側配置平面環狀高頻天線，而對於高頻天線供電俾將高頻 入射於筒狀容器内。 /於電漿處理裝置’曾在例如日本專利第317洲號公報 等有所揭示。 使平面環狀之高頻天線配置於與基板相對之天花面上 而成之感應搞合型電衆CVD裝置，其高頻天線最：卜周侧 圈之磁力線（磁通量密度線）—向是有可能會穿通筒狀容 <壁（筒面）。當磁力線（磁通量密度線）穿通筒狀容器之 ⑽面）時，由於電予或離子會沿著磁力線而移動，以°致有 能因電子或離子衝撞於筒狀容器之壁而造成過熱狀態， 因蝕刻作用而造成顆粒產生之原因。 85928 200415710 為抑制電子或離子對於壁面之衝撞，雖也可採取使平面 環狀回頻天線之徑形成為比筒狀容器之徑為小，俾使筒狀 各為之壁位置的壁面方向磁通量密度變小之對策。惟採取 此種對策時，如欲相對於筒狀容器大小而以廣闊範圍產生 均勾的包漿’則將發生困難，以致有可能造成效率下降且 使筒狀容器内之均勻性下降之問題。 本發明是鑑於上述狀況所完成者，其目的乃在於提供一 種即使以廣闊範圍使均勻的電漿產生於筒狀容器内，也能 使土面方向磁通量密度變小之電漿處理裝置及電漿處理方 法0 二，者，在電漿CVD裝置（電漿處理裝置”由於其電漿密度 車乂门有可说因空間電位差而變成有電壓施加於半導體表 兀件破壞)。因此目前正在渴望研發出能抑制因充電所引起 凡件破壞之電漿處理裝置。 本發明是鑑於上述狀 種能抑制因充電所引起 理方法。 況所元成者’其目的乃在於提供一 元件破壞之電漿處理裝置及電漿處 L發明内容】 本發明之電|复虛jΓ # .. 4仏置，係在處理室天花面上部配置 面衣狀天線，並藉由以 於虛理Α ώ %于权仏私於天線，使電漿產 對、人其 而以在其處受到激發•活性化之原子•分 對Α基板表面施與處理 於夭；^ ^、 "衧彳文為·在天線周圍配置 Ά第二天線，且具備用以對於第二天線供 85928 200415710 與對於天線供電之電流成反向的電流之第二供電手段。 其結果，在第二天線部分即可產生與天線部分之磁力線 成相反之磁力線，而實現即使以廣闊範圍使均勻的電漿產 生於筒狀容器内，也能使壁面方向磁通量密度變小之電漿 處理裝置。 並且，以使供電手段與第二供電手段構成為同一交流電 源為其特徵。 另外，以使供電手段的交流電源與天線之連接及第二供 電手段的交流電源與第二天線之連接成為同一方向，且具 備用以使供電手段的交流電源與第二供電手段側的交流電 源之相位成為反相的相位變更手段為其特徵。 另外，以使供電手段的交流電源與天線之連接及第二供 電手段的交流電源與第二天線之連接成為反向為其特徵。 另外，以對於基板表面之處理係以受到激發•活性化之 原子·分子對於基板表面製作膜之成膜處理為其特徵。 本發明之電漿處理方法，係藉由來自處理室天花面上部 之供電使電漿產生於處理室内，而以在其處受到激發•活 性化之原子•分子對於基板表面施與處理者，其特徵為： 在天花面外側產生與因電漿所產生的供電電流成反向之電 流而施與處理。 其結果，可實現即使以廣闊範圍使均勻的電漿產生於筒 狀容器内，也能使壁面方向磁通量密度變小之電漿處理方 法。 本發明之電漿成膜裝置，係具備：供收容基板之筒狀容 85928 200415710 器，用以將原料氣體供給於筒狀容器内之原料氣體供給手 段，配置於筒狀容器之天花面上面，用以藉供電而使筒狀 容器内電漿化之平面環狀天線，供電至天線以使筒狀容器 内產生原料氣體電漿；藉由筒狀容器内之電漿所激發而活 性化之原子、分子，於基板表面製作膜者，其特徵為具備 :第二天線，其係配置在天線周圍且位於天花面外側，及 第二供電手段，其係用以對於第二天線供給與對於依供電 手段的天線之供電電流成反向之電流。 其結果，在第二天線部分即可產生與天線部分之磁力線 成相反之磁力線，而實現即使以廣闊範圍使均勾的電漿產 生於筒狀容器内，也能使壁面方向磁通量密度變小之電漿 成膜裝置。 並且，以使供電手段與第二供電手段構成為同一交流電 源為其特徵。 另外，以使供電手段的交流電源與天線之連接及第二供 電手段的交流電源與第二天線之連接成為同一方向，且具 備使供電手段的交流電源與第二供電手段側的交流電源之 相位成為反相的相位變更手段為其特徵。 另外，以使供電手段的交流電源與天線之連接及第二供 電手段的交流電源與第二天線之連接成為反向。 本發明之電漿成膜方法，係藉由來自筒狀容器天花面上 部之供電使電漿產生於筒狀容器内，而在其處以受到激發 •活性化之原子·分子對於基板表面製作膜者，其特徵為 :在天花面外側產生與因電漿所產生的供電電流成反向之 電流而製作膜。 其結果，可實現即使以廣闊範圍使均勻的電漿產生於筒 85928 200415710 狀容器内，也能使壁面方向磁通量密度變小之電漿成膜方 本發明之電漿處理裝置，係在處理室天花面上部配置環 狀天線，藉由以供電手段供電於天線，使電漿產生於處理 室内，而以在其處受到激發·活性化之原子•分子對於基 板表面施與處理者，其特徵為：使基板位於即使電漿為高 密度也會成為低電子溫度之區域。 其結果，可使基板位於儘管電子密度為高也電子溫度為 低的區域，使得電子溫度變為較低區域而抑制因充電所引 起基板之元件破壞。 並且，以電漿為高密度之區域係每1 cm3有1010個以上電 子存在之電子密度，且電漿會成為低電子溫度之區域係電 子溫度會成為1電子伏特以下之區域為其特徵。 其結果，可確實地抑制因充電所引起基板之元件破壞。 本發明之電漿處理裝置，係在處理室天花面上部配置環 狀天線，藉由以供電手段供電於天線，使電漿產生於處理 室内，而在其處以受到激發·活性化之原子•分子對於基 板表面施與處理者，其特徵為：在天線連接輸出為2 kW至 15 kW且10 MHz至30 MHz之高頻電源，且為使基板位於電 子溫度會成為1電子伏特之區域而使自天線下面至基板之 距離設定為1 90 mm以上。 其結果，可使基板位於即使電漿為高密度也會成為低電子 溫度之區域，藉以使基板位於儘管電子密度為高但電子溫度 也為低的區域，而抑制因充電所引起基板之元件破壞。 85928 -10- 200415710 本發明之電漿處理裝置，係 狀天線，藉由以供電手段供電 主内’而在其處以受到激發· 板表面施與處理者，其特徵為 15 kW且 1〇 MHz至 30 MHz之高 基板之距離設定為200 mm。 在處理室天花面上部配置環 於天線，使電漿產生於處理 活性化之原子•分子笱於基 ··在天線連接輸出為2 kw至 頻電源，且使自天線下面至 度會成為低電予 度為T%但電子溫 引起基板之元件 其結果，可使基板位於即使電漿為高密 見度之區域，藉以使基板位於儘管電子密 度也為低的區域，而確實地抑制因充電所 破壞 本發明之電槳處理方法，係藉由來自筒 …q N队谷詻天花面 部义供電使電漿產生於處理室内， > 一 内而在其處以受到激發， 〈原子•分子對於基板表面施與處理者，其特徵』 :在電槳即使為高密度但也會成為低電子溫度之區域對方 基板施與處理。 、> 其結果，可使基板位於儘管電子密度為高但電子溫度4 ，低的區域，由於該位置係屬電子溫度較低之區域了 月匕抑制因充電所引起基板之元件破壞。 、 【實施方式】 為進一步詳加說明本發明，根據附圖式說明如下。 首先說明本發明之一實施形態實例。 本發明係一種對於成膜室供給原料氣體（製程氣體：例士 碎甲燒⑽4))，以產生電漿，而在其處以受到激發•活性 化之原子•分子使氧切或氮切之膜製作於基板表面之 85928 -11- 200415710 私水成膜裝置，其係用以由天花面上側對於平面環狀之天 線供電而以感應耦合方式使電漿產生於筒狀容器内，而使 氧化碎或氮化矽成膜於基板表面者。 此時，則在天花面外侧產生與供產生電漿之供電電流成 反向的私流，藉以使在壁位置之壁面方向磁通量密度變小 而抑制電子或離子對於筒狀容器之壁的衝撞。藉此即可使 用與筒狀客器之徑相稱的天線而以廣闊範圍使均勻的電漿 產生於筒狀容器内，且縮小壁面方向磁通量密度以抑制會 处於過熱狀態之現象，並且抑制因蝕刻作用引起之顆粒產 生。 Q此可貪現即使以廣闊範圍使均勻的電漿產生於筒狀容 益内，也能使壁面方向磁通量密度變小之電漿成膜裝置。 並且本發明也可適用於一種使電漿產生而在其處以受到 n 活性化之原子•分子對於基板表面施與蝕刻等處理 之電漿處理裝置。 以下根據圖式說明將本發明適用於電漿成膜裝置（電漿 CVD裝置）之實施例。 w 士圖1所不，在電漿CVD裝置工設有圓筒狀之鋁製筒狀容 叩（备态）2，而成膜室3係形成在容器2内。在容器2上部設置 緣體材料製（例如氧化銘；Ah⑹之天花板4，在容 中^之成膜皇3則設有晶圓支持台$。晶圓支持台5具有 用以保持基板圓盤狀載置部7，而載置部7係以支持軸8 加以支持。 在天花板4上方，配置例如呈圓形線圈環狀（平面環狀）之 85928 -12- 200415710 高頻天線Π，高頻天線11係介以未圖示之整合器而與高頻電 源12(父泥電源）相連接（供電手段）。對於高頻天線11供給電 力，即可使電磁波入射於容器2之成膜室3。入射於容器2内 之電磁波會使成膜室3之氣體離子化而產生電漿。 在谷斋2設置氣體供給嘴1 3，以作為用以供給例如碎甲燒 (例如S1H4)等材料氣體之原料氣體供給手段，而由氣體供給 嘴1 3則將作為成膜材料之原料氣體（例如供給於成膜室3 内。另在容器2設置用以供給氬或氦等惰性氣體（稀有氣體） 或氧、氫等輔助氣體的絕緣體材料製（例如氧化鋁；Ai2〇3) 之輔助氣體供給嘴（省略圖示），且以真空裝置14使容器2内 邵維持於特定壓力。 另外’雖然從略圖示，但在容器2設有基板6之搬入•搬 出口 ’俾與未圖示的搬送室之間使基板6搬入·搬出。 在上逑電漿CVD裝置1，基板6係被載放在晶圓支持台5之 載置部7而加以保持（例如使用靜電夾具），並由氣體供給嘴 U將特定流量之原料氣體供給於成膜室3内，由輔助氣體供 給嘴將特定流量之辅助氣體供給於成膜室3内，且使成膜室 3設足於因應成膜條件之特定壓力。然後，由高頻電源12供 給電力於高頻天線11，以產生高頻。 藉此’成膜室3内材料氣體即進行放電而使其一部分成為 電漿狀態。該電漿將衝撞其他中性分子而更進一步的使中 性分子電離，或激發。經如此所產生活性的粒子，將為基 板6所吸附而有效地產生化學反應，而堆積成cvd膜。 然而，對於將平面環狀高頻天線Π配置於與基板6相對之 85928 -13- 200415710 天化面上側而成之咸靡 ^ ^ ^ &、I耦合型電漿CVD裝置1而言，卻有高 頻天線11的最外周例緣 ^ …、泉圈〈磁力線（磁通量密度線）會穿通 谷為2壁面的（筒面膚木 ^ 虞*磁力線（磁通量密度線）穿通容哭 2的壁面（筒面）時，由於 斗 ,, 、子或離子會沿耆磁力線而移動， 致有可能因電子或論早备 飞離子衝楦於容器2之壁而 或因蚀刻作用而造成顆粒產生之原因。 ’，、、狀心 因斤此，在本實施例則在位於天花面外側的天線之周圍配 弟-天線’並構成為可使與料天線的供電電流成反 之電流供給於第二天線。 …如圖2所示，高頻天線n係以其略與天花面相 同徑之部分充當為天線lla，而以位於天花面外側之部分 无當為天線m。並且構成為料第二天線m之部分則以 與天線Ua之部分成相反之連接狀態下由高頻電源12供給 電流（第二供電手段）。也就是說，在第二天線lib之部分， 則將高頻電源12連接於天線lla之部分的接地側線圈，而 天線1 la之部分的供連接高頻電源12的一方之線圈係使之 成為接地狀態。 藉此，在第二天線Ub之部分即將產生與磁力線Η成相反 之磁力線F2,使得穿通容器2的壁面（筒面）之磁力線”與反 向之磁力線F2合成而使穿通容器2的壁面（筒面）之磁力線減 少。因而可使在容器2的壁位置之壁面方向磁通量密度變小 而消除因電子或離子衝撞於容器2的壁所造成過熱狀態或 因蝕刻作用所造成顆粒產生之原因。 再加上由於天線lla係與天花面成略同徑，因而相對於容 -14- 85928 200415710 _大小可以廣闊範圍產生均勻 降 妁兒漿，可在不致有效率下 ..^ ^ 口此即使以廣闊範園使電漿產 生万；谷斋2内，也可使壁面方向 ， 密度變小，而實現經 了以消除會造成過熱狀態或因 蚀刻作用而構成顆粒產生之 原因的電漿C VD裝置。 接著根據圖3至圖5說明具有龙讪鲁、A y丨、 ^ ^ 巧具他貫施例之天線及供電手 #又的電漿CVD裝置之JL他膏銘办丨』 衣罝（、他貫她例如下。惟因天線及供電手 段以外之構成構件仍與圖1者相 工 、 傾u 因而以相當於圖2之圖3 土圖5之平面狀況圖式加以說 並4略同一邵分之結構說 明。 茲根據圖3說明第二實施例如下。 圖3所不 < 貫犯例，其作為天線的高頻天線11之結構仍與 …、圖2同樣地呈平面環狀，並使高頻電㈣連接於天線山 ，且使作為第二供電手段之第二高頻電源21連接於 第二天線ub之部分。並且構成為對於第二天線nb之部分則 以與天線1U之部分成相反之連接狀態下由第=高頻電源21 供給電流。也就是說，在第二天線llb之部分，則將高頻電 源12連接於天線Ua之部分的接地侧線圈，而天線Ha之部分 的供連接高頻電源12的一方之線圈係使之成為接地狀態。 藉此，與圖1所示實施例同樣地，在第二天線丨lb之部分即 將產生與磁力線F1成反向之磁力線F2，使得穿通容器2的壁 面（筒面）之磁力線F1與相反之磁力線!^2合成而使穿通容器2 的壁面（阔面）之磁力線減少。因而可使在容器2的壁位置之 壁面方向磁通量密度變小，而消除因電子或離子衝撞於容 85928 -15- 200415710 器2的壁所造成過熱狀怨或因虫刻作用所造成顆粒產生之 原因。 再加上由於天線11 a係與天花面成略同徑，因而相鮮於容 器大小可以廣闊範圍產生均勻的電漿，可在不致有效率下 降下維持容器2内之均勻性。因此即使以廣闊範圍使電裝產 生於容器2内，也可使壁面方向磁通量密度變小，而實現辦 予以消除會造成過熱狀態或因蝕刻作用而構成顆粒產生之 原因的電漿CVD裝置。 茲根據4圖說明第三實施例如下。 在圖4所示之實施例，則配置作為與天花板4之徑略同後 之天線的平面環狀高頻天線22，並在高頻電源丨2外側即位 於天花面外側，配置另一結構之第二天線23。並使高頻電 源12連接於高頻天線22，且使作為第二供電手段之第二高 頻電源24連接於第二天線23。高頻天線22與第二天線23係 以同一方向分別與高頻電源12及第二高頻電源24相連接， 惟第二天線23卻介以作為相位變更手段的移相器25而與第 二高頻電源24相連接。 而由第二高頻電源24介以移相器25而對於第二天線23供 給與由高頻電源12送給高頻天線22的電流成反相之電流， 即可與圖1所示實施例同樣地，在第二天線23之部分即將產 生與高頻天線22之部分的磁力線成相反之磁力線，使得穿 通么器2的壁面（筒面）之磁力線與相反之磁力線合成而使穿 通容器2的壁面（筒面）之磁力線減少。因而可使在容哭2的 壁位置之壁面方向磁通量密度變小而消除因電子或離子 85928 -16- 200415710 衝撞於容器2的壁所造成過熱狀態或因蝕刻作用所造成顆 粒產生之原因。 再加上由於天線22係與天花面成略同徑，因而相對於容 器大小可以廣闊範圍產生均勻的電漿，可在不致有效率下 P牛下維持容器2内之均勻性。因此即使以廣闊範圍使電漿產 生於容器2内，也可使壁面方向磁通量密度變小，而實現經 丁以消除會造成過熱狀態或因蚀刻作用而構成顆粒產生之 原因的電漿CVD裝置。 茲根據圖5說明第四實施例如下。 在圖5所示實施例，則以同心環狀天線3U、3lb、Mc、3id 構成與天花板4之徑略同徑之高頻天線3 1並使之配置。環狀 之第二天線3 2係配置於天花面外側之位置。高頻電源丨2係 以並聯連接於天線31a、31b、31c、31d，且第二天線32係以 與環天線3 1成相反之連接狀態下連接於高頻電源12。即第 二天線32在與天線31之高頻電源12相反之狀態下，連接側 與接地側在相反之狀態連接於高頻電源12。 藉此’與圖1所示實施例同樣地，在第二天線3 2之部分即 將產生與天線3 1之部分的磁力線成相反之磁力線，使得穿 通容器2的壁面（筒面）之磁力線與相反之磁力線合成而使穿 通容态2的壁面（筒面）之磁力線減少。因而可使容器2的壁位 置之壁面方向磁通量密度變小而消除因電子或離子衝撞於 容器2的壁所造成過熱狀態或因蝕刻作用所造成顆粒產生 之原因。 再加上由於天線3 1係與天花面成略同徑，因而相對於容 85928 -17- 200415710 器2之大小可以廣闊範圍產生均勻的電漿，可在不致有效率 下降下維持容器2内之均勾性。.因此即使以廣闊範圍使電裝 產生灰U内’也可使壁面方向磁通量密度變小，而實現 經予以消除會造成過熱狀態或因蝕刻作用而構成顆粒產生 之原因的電漿CVD裝置。 接著說明其他實施形態例子。 本發明係一種電漿成膜裝置，其係用以對成膜室供給原 料氣體（材料氣體；例如Μ%)，使電漿產生而在其處以受到 “活性化的原子•分子在基板表面製作氧化矽或氮化 碎4膜者’其係用〃由天花面上侧對平面環狀之天線供電 而以感應耦合方式使電漿產生於筒狀容器内，而使氧化矽 或氮化矽成膜於基板表面者。 並且使基板位於即使電漿為高密度也會成為低電子溫度 之區域，而電漿為高密度之區域係每！（；1113有1〇1〇個以上= 子存在之電子密度，且電槳會成為低電子溫度之區域係^ 子溫度會成為1電子伏特以下之區域。 更進一步在天線連接10 MHz至30 MHz之高頻電源，且為 使基板位於電子溫度會成為丨電子伏特之區域而使自天線 下面至基板之距離設定為190 mm以上者。 另外在天線連接10 MHz至30 MHz之高頻電源，且為使基 板位於電子溫度會成為1電子伏特之區域而使自天線下= 至基板之距離設定為2 0 0 mm以上者。 因此，可使基板位於即使電漿為高密度但電子溫度也為 低之區域，因此因屬電子溫度為低之區域而可抑制因充電 85928 -18 - 200415710 所引起基板之元件破壞。 &再者’本發明也可適用於使電漿產生而在其處以受到激 無•活性化的原子.分子對於基板表面施與㈣或灰化等 處理之電漿處理裝置。 以下根據圖式說明將本發明適用於電漿成膜裝置（電漿 CVD裝置）之實施例。 如圖6所示，電漿CVD裝置81具有圓筒狀鋁製之筒狀容器 容器）82，而成膜室3(例如直徑25〇 mm〜5〇〇 mm)係形成在 备為82内。在容器82上部設置圓形絕緣材料製（例如氧化鋁 ;Α1ζ〇3厚度30 mm)之天花板84 ,在容器82中心之成膜室μ 則設有晶圓支持台85。晶圓支持台85具有用以料半導體 基板86之圓盤狀載置部87，而基板％係例如以靜電夾頭手 段8 8保持於載置部87。 在天花板84上方，配置例如圓形線圈狀（平面環狀）之作為 天線的高頻天線91，高頻天線91係介以未圖示之整合器而 與南頻電源92(交流電源）相連接（高頻源）。對於高頻天線91 供給電力，即可使電磁波入射於容器82之成膜室“。入射 於客器82内之電磁波會使成膜室83内之氣體離子化而產生 電漿。 輸出為2 kW至15 kW(例如5 kW)、10 _2至3〇 ΜΗζ(例如 1 3 · 5 6 MHz)之南頻源係連接於高頻天線9丄。 在容器82設置例如用以供給矽甲烷（例如SiH4)等材料氣 體之氣體供給嘴13，以便由氣體供給嘴13將作為成膜材料 (例如Si〇2)之原料氣體供給於成膜室83。另在容器2設置用 85928 -19- 200415710 以供給氬或氦等惰性氣體（稀 ^ 有乳m)或氣、氫等輔助氣體的 絶緣fe材科製（例如氧化鋁； 门一、 2〇3)<輔助氣體供給嘴（省略 圖7F )，且以真空裝置94使容哭^ 各 ▲备82内邵維持於特定壓力（例如 0.1 Pa〜10Pa左右之減壓氣芬卜 另外’雖然從略圖示，作 在谷為82設有基板86之搬入· 搬出口’俾與未圖示的搬送皆 歡^至 < 間使基板86搬入·搬出。 在上述電槳CVD裝置81，基板86係被載放在晶圓支持台 85之載置邵87而加❹持（例如靜電夾具手段叫，並由氣體 供給嘴93將特定流量之原料氣體供給於成膜室_，由辅 助氣體供給嘴將特定流量之辅助氣體供給於成膜⑽内， 且使成Μ 1： 83設定於因應成膜條件之特定壓力。然後，由 高頻電源92供給電力於高頻天線91，以產生高頻。 藉此，成膜室83内材料氣體即進行放電而使其一部分成 為電漿狀態。該電漿將衝撞其他中性分子而更進一步的使 中性为子電離，或激發。經如此所產生活性的粒子，將為 基板86所吸附而有效地產生化學反應，而堆積。 經保持在晶圓支持台85的載置部87之基板86，係使之位 於即使電漿為而密度也會成為低電子溫度之區域。換言之 基板86之位置（載置部87之高度）係設定為自高頻天線91之 下面起直土基板86之距離Η能成為自190 mm至250 mm (較佳 為200 mm左右）。載置部87也有構成為可自由升降之結構， 俾便調整基板86之位置。 由於將基板86之位置設定於自高頻天線91之下面起直至 基板86之距離Η為自190 mm至2 50 mm之位置，因此可使基 85928 -20- 200415710 之電子密度為高密 伏特（eV)以下之區 低 所 板86位於每i cm3有1010個以上電子存在 度之電子區域，且電子溫度會成為1電子 域0 岔度為高但電子溫度也為 低之區域而可抑制因充電 由於使基板86位於即使電子 之區域，因此因屬電子溫度為 引起基板8 6之元件破壞。 兹將自高頻天線91下面至基板86之距離H與電子溫度之 關係根據圖7說明如下。 、 如圖7所示，距離Η在於自〇mm至未滿19〇mm之範圍，電 子溫度為數eV。距離Η變為190 mm時電子溫度將變為ι ^ ，而距離Η為190 mm以上時電子溫度將變為丨ev以下。因此 ，自高頻天線91下面至基板86之距離設定為自l9〇mm至 mm，即可作為低電子溫度區域而抑制因充電所引起基板％ 之元件破壞。 距離Η即使超過300 mm，也可作為低電子溫度區域而抑制 因充電所引起基板86之元件破壞，但距離^^曾大時成膜速率 即將下降而拖延成膜時間。因而得知，如欲在仍然維持著 成膜速率下抑制因充電所引起基板8 6之元件破壞時，則將 自高頻天線91下面至基板86之距離Η設定為自190 111111至250 mm即可。 另外距離Η即使超過200 mm，電子溫度也可在成膜速率不 致於下降下充分下降，而得以確實地抑制因充電所引起基 板86之元件破壞。距離η設定為200 mm而進行確認時，即使 在閘乳化膜與電極之面積比為兩百萬比一之情形下進行 85928 -21 - 200415710 1000片成膜，也能得到連一個因充電所引起基板86之元件 破壞也未能看到之結果。 因此，由於以能使自高頻天線9 1下面至基板86之距離成 為自190 mm至250 mm之方式而設定基板86之位置，因而即 使為電子每1 cm3有1010個以上存在之電子密度的高密度電 漿區域，也能使之成為電子溫度為1電子伏特以下之區域， 而使基板86位於電子密度即使為高但電子溫度也為低之區 域，由於該位置係屬電子溫度較低之區域，因此能抑制因 充電所引起基板86之元件破壞。 產業上之利用性 综上所述，在一種藉由來自筒狀容器天花面上部之供電 而使電漿產生於筒狀容器内，而在其處以受到激發•活性 化之原子·分子在基板表面製作膜之電漿成膜方法中，由 於構成為在天花面外侧產生與供產生電漿的供電電流成反 向之電流而製作膜，因此可實現即使以廣闊範圍使均勻的 電漿產生於筒狀容器内，也能使壁面方向磁通量密度變小 之電漿成膜方法。 另在一種藉由來自筒狀容器天花面上部之供電使電漿產 生於筒狀容器内，而在其處以受到激發•活性化之原子· 分子對於基板表面施與處理之電漿處理方法中，由於構成 為在電漿即使為高密度但也會成為低電子溫度之區域對於 基板施與處理，因此可使基板位於儘管電子密度為高但電 子溫度也為低的區域。由於該位置係屬電子溫度較低之區 域，因此能抑制因充電所引起基板之元件破壞。 85928 -22- 200415710 【圖式簡單說明】 圖1係本發明一實施例之電漿CVD裝置概括側視圖。 圖2係顯示天線形狀之電漿CVD裝置俯視圖。 圖3係顯示天線形狀之電漿CVD裝置俯視圖。 圖4係顯示天線形狀之電漿cvD裝置俯視圖。 圖5係顯示天線形狀之電漿cvD裝置俯視圖。 圖6係本發明其他實施例之電漿cvd裝置概括侧視圖。 圖7係顯示自天花面下面至基板之距離與電子溫度之關 係圖表。 【圖式代表符號說明】 1 電漿成膜裝置（電漿CVD裝置） 2 筒狀容器（容器） 3, 83 成膜室 4 天花板 5, 85 晶圓支持台 6, 86 基板 7, 87 載置部 8 支持轴 11，22, 31，91 向頻天線 lla5 31，31a， 天線 31b， 31c， 31d 11b， 23, 32 第二天線 12, 92 向頻電源 13 氣體供給嘴 85928 -23- 200415710 14 真空裝置 21，24 弟二南頻電源 25 移相器 Fl，F2 磁力線 Η 距離 88 靜電夾具手段 85928 -24-200415710 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a plasma processing device and a plasma processing method for generating electricity and applying a treatment to a substrate. The present invention relates to a plasma film forming apparatus and a plasma film forming method for generating a plasma and performing a film formation on a substrate surface by a vapor phase growth method. [Prior art] In the field of semiconductor manufacturing, there is a film-forming method using an electro-polymerized cvd (chemical vapor deposition) device. Electropolymeric CVD device system—a kind of material gas introduced into the film-forming chamber in a cylindrical container, and a high-frequency antenna is used to enter a high-frequency state to make it into a plasma state. The material is stimulated to promote the chemical reaction on the surface of the substrate, thereby performing a film forming device. In the plasma CVD apparatus, a planar loop-shaped high-frequency antenna is arranged on the side of the ceiling facing the substrate, and power is supplied to the high-frequency antenna, and high frequency is incident into the cylindrical container. / The plasma processing apparatus' has been disclosed in, for example, Japanese Patent No. 317. An induction-coupled electric CVD device in which a planar loop-shaped high-frequency antenna is arranged on the ceiling surface opposite to the substrate. The most high-frequency antenna is: magnetic field lines (magnetic flux density lines) on the side of the circle. May pass through the cylindrical container < wall (tube surface). When the magnetic field lines (magnetic flux density lines) pass through the surface of the cylindrical container), electricity or ions will move along the magnetic field lines, so that there may be an overheated state caused by electrons or ions hitting the wall of the cylindrical container, Causes of particles due to etching. 85928 200415710 In order to suppress the collision of electrons or ions on the wall surface, although the diameter of the planar loop loop antenna can be made smaller than the diameter of the cylindrical container, the magnetic flux density in the direction of the wall surface of each cylindrical wall position can be adopted. Smaller countermeasures. However, if such countermeasures are taken, it will be difficult to produce uniformly-coated pulp in a wide range with respect to the size of the cylindrical container, which may cause problems such as a decrease in efficiency and uniformity in the cylindrical container. The present invention has been made in view of the above circumstances, and an object thereof is to provide a plasma processing device and a plasma that can reduce the magnetic flux density in the soil surface direction even if a uniform plasma is generated in a cylindrical container over a wide range. Processing method 0 Second, in the plasma CVD device (plasma processing device) due to its plasma density, the car door can be said to be due to the potential difference in space, there is a voltage applied to the semiconductor watch components to destroy). A plasma processing device capable of suppressing damage to all parts caused by charging is provided. The present invention is in view of the above-mentioned conditions, which can suppress the reasoning method caused by charging. Therefore, the purpose of the original device is to provide a plasma treatment of component damage. Contents of the device and the plasma unit L] The electricity of the present invention | Fuxu jΓ # .. 4 set, which is equipped with a face-like antenna on the ceiling of the processing room, and uses the virtual theory The antenna is private, so that the plasma can be excited and activated by others. • Activated atoms • Divide and treat the surface of the substrate A. ^ ^, " 衧 彳 文 为 · Arrange around the antenna Yi Di Two antennas, and a second power supply means for supplying a second antenna with 85928 200415710 and a current opposite to the current supplied to the antenna. As a result, the second antenna portion can generate magnetic line formation with the antenna portion. Conversely, the magnetic field lines realize a plasma processing device that can reduce the magnetic flux density in the direction of the wall surface even if a uniform plasma is generated in a cylindrical container over a wide range. The power supply means and the second power supply means are configured as The same AC power source is its feature. In addition, the AC power source of the power supply means is connected to the antenna, and the AC power source of the second power supply means is connected to the second antenna in the same direction. It is characterized by a phase changing means in which the phase of the AC power source on the second power supply means is inverted. In addition, the connection between the AC power supply means on the power supply means and the antenna and the connection between the AC power supply on the second power supply means and the second antenna are The reverse is its characteristic. In addition, the treatment of the substrate surface is based on the excited and activated atoms and molecules. The film-forming treatment of the film on the surface of the board is a feature. The plasma treatment method of the present invention is to generate plasma in the treatment chamber by applying power from the upper part of the ceiling surface of the treatment chamber, so as to be excited and activated there. Atoms and molecules that apply to the surface of a substrate are characterized in that they generate and apply a current on the outside of the ceiling that is opposite to the power supply current generated by the plasma. As a result, uniformity can be achieved even over a wide range. The plasma processing method is produced in a cylindrical container and can also reduce the magnetic flux density in the direction of the wall surface. The plasma film forming device of the present invention is provided with a cylindrical container 85928 200415710 for housing a substrate, The raw material gas supply means for supplying the raw material gas into the cylindrical container is arranged on the ceiling of the cylindrical container, and a planar loop antenna for plasmatizing the cylindrical container by supplying power is supplied to the antenna to make the tube The raw material gas plasma is generated in the cylindrical container; the atoms and molecules activated by the plasma in the cylindrical container are used to make a film on the substrate surface, which are characterized by: The second antenna is arranged around the antenna and is located outside the ceiling, and the second power supply means is used to supply the second antenna with a current opposite to the power supply current of the antenna according to the power supply means. As a result, a magnetic field line opposite to the magnetic field line of the antenna portion can be generated at the second antenna portion, and even if a uniform plasma is generated in the cylindrical container over a wide range, the magnetic flux density in the wall direction can be reduced. Plasma film forming device. It is also characterized in that the power supply means and the second power supply means are configured as the same AC power source. In addition, the connection between the AC power supply of the power supply means and the antenna and the connection of the AC power supply of the second power supply means and the second antenna are in the same direction, and the device is provided with an AC power supply of the power supply means and an AC power supply of the second power supply means. The phase changing means in which the phase is reversed is characteristic. In addition, the connection between the AC power source of the power supply means and the antenna and the connection between the AC power source of the second power supply means and the second antenna are reversed. In the plasma film forming method of the present invention, a plasma is generated in a cylindrical container by supplying electricity from the upper part of the ceiling surface of the cylindrical container, and a film is formed on the substrate surface with excited and activated atoms and molecules there. It is characterized in that a film is produced on the outside of the smallpox surface by generating a current in the reverse direction of the power supply current generated by the plasma. As a result, even if a uniform plasma is generated in a cylindrical 85928 200415710 container in a wide range, a plasma film capable of reducing the magnetic flux density in the direction of the wall surface can be realized. The plasma processing apparatus of the present invention is attached to a processing chamber. A loop antenna is arranged on the ceiling of the ceiling. By supplying power to the antenna through power supply means, the plasma is generated in the processing chamber, and the substrate and the surface are excited and activated by atoms and molecules. The characteristics are as follows: : Place the substrate in a region where the plasma temperature will be low even if the plasma density is high. As a result, the substrate can be located in a region where the electron temperature is low in spite of the high electron density, so that the electron temperature becomes lower, and the destruction of the substrate due to the charging can be suppressed. In addition, a region with a high plasma density has an electron density of 1010 or more electrons per 1 cm3, and a region where the plasma will have a low electron temperature is a region where the electron temperature will be less than 1 electron volt. As a result, it is possible to surely suppress the destruction of the substrate by the charging. The plasma processing device of the present invention is provided with a loop antenna on the ceiling of the processing room, and by supplying power to the antenna by means of power supply, the plasma is generated in the processing room, and excited and activated atoms and molecules are placed there. For those who apply to the surface of the substrate, it is characterized in that the antenna is connected to a high-frequency power source with an output of 2 kW to 15 kW and 10 MHz to 30 MHz, and the substrate is located in a region where the electron temperature becomes 1 electron volt. The distance from the bottom of the antenna to the substrate is set to more than 1 90 mm. As a result, the substrate can be located in a region where the electron temperature is low even if the plasma has a high density, so that the substrate can be located in a region where the electron temperature is low even though the electron density is high, thereby suppressing damage to the substrate due to charging. . 85928 -10- 200415710 The plasma processing device of the present invention is a line antenna that is powered by the power supply means and is excited at its place. The surface of the board is treated by 15 kW and 10MHz to The distance of the 30 MHz high substrate is set to 200 mm. A loop is placed on the antenna on the ceiling of the processing room, so that the plasma is generated from the activated atoms. The molecules are on the base. The output of the antenna connection is 2 kw to the frequency power supply, and the low power from the antenna will be low. The element of the substrate is caused by the electron temperature due to the predecessor T%. As a result, the substrate can be located in a region where the plasma has a high density, so that the substrate can be located in a region where the electron density is low, and the damage caused by charging can be reliably suppressed. The electric paddle processing method of the present invention is to generate plasma in the processing chamber by using the power supply from the tube ... q N team Gusong smallpox facial power, > within one to be excited there, <atoms and molecules are applied to the surface of the substrate And processor characteristics: "Electric paddles are treated in areas where the electric paddles have a low electron temperature, even if they are high-density. As a result, the substrate can be located in a region where the electron temperature is low despite the high electron density. Since the position is a region with a lower electron temperature, the substrate can be prevented from being damaged by charging. [Embodiment] In order to further explain the present invention in more detail, the description based on the drawings is as follows. First, an example of an embodiment of the present invention will be described. The present invention relates to a film that supplies a raw material gas (process gas: for example, broken nail burner 4)) to a film-forming chamber to generate a plasma, and is excited or activated by atoms or molecules to cut oxygen or nitrogen. 85928 -11- 200415710 private water film-forming device manufactured on the surface of the substrate, which is used to supply power to the planar loop antenna from the ceiling surface, and the plasma is generated in a cylindrical container by inductive coupling to break the oxidation. Or silicon nitride is formed on the substrate surface. At this time, a private flow opposite to the supply current for generating plasma is generated on the outside of the ceiling, so that the magnetic flux density in the direction of the wall surface at the wall position is reduced to suppress the collision of electrons or ions on the wall of the cylindrical container. In this way, an antenna commensurate with the diameter of the cylindrical passenger can be used to generate a uniform plasma in the cylindrical container in a wide range, and the magnetic flux density in the direction of the wall surface can be reduced to suppress the phenomenon of overheating, and to suppress the cause of overheating. Particles caused by etching. Q This is a plasma film-forming device that enables a uniform plasma to be generated in a cylindrical shape over a wide range, and can reduce the magnetic flux density in the direction of the wall surface. In addition, the present invention can also be applied to a plasma processing apparatus that generates a plasma and applies a process such as etching to a substrate surface with atoms and molecules activated by n thereon. Hereinafter, an embodiment in which the present invention is applied to a plasma film forming apparatus (plasma CVD apparatus) will be described based on the drawings. w As shown in FIG. 1, a cylindrical aluminum cylindrical container (standby state) 2 is provided in the plasma CVD apparatus, and a film forming chamber 3 is formed in the container 2. A container body 2 is provided with an edge body material (for example, an oxidized inscription; Ah⑹ ceiling 4 is provided, and a film support 3 in Rongzhong ^ is provided with a wafer support table $. The wafer support table 5 has a disk shape for holding the substrate The mounting section 7 is supported by the support shaft 8. Above the ceiling 4, a high-frequency antenna Π, a high-frequency antenna Π, such as a circular coil ring (planar ring), is disposed. 11 is connected to a high-frequency power source 12 (parent mud power source) (power supply means) through an unillustrated integrator. By supplying power to the high-frequency antenna 11, electromagnetic waves can be incident on the film-forming chamber 3 of the container 2. The electromagnetic wave incident on the container 2 ionizes the gas in the film forming chamber 3 to generate a plasma. A gas supply nozzle 13 is provided in Guzhai 2 as a material for supplying material gas such as shattered nail sintering (such as S1H4). The raw material gas supply means, and the gas supply nozzle 1 3 supplies the raw material gas as the film forming material (for example, the film forming chamber 3 is provided. In addition, the container 2 is provided to supply an inert gas (rare gas) such as argon or helium or Made of insulator materials such as oxygen and hydrogen (eg Aluminum (Ai203) auxiliary gas supply nozzle (not shown), and the inside of the container 2 is maintained at a specific pressure by the vacuum device 14. In addition, although the illustration is omitted, the container 6 is provided with a substrate 6 The substrate 6 is carried in and out between a carry-in / carry-out port and a transfer chamber (not shown). In the upper plasma CVD apparatus 1, the substrate 6 is placed on a placement section 7 of a wafer support table 5 and is applied. While holding (for example, using an electrostatic jig), the gas supply nozzle U supplies a specific flow of raw material gas into the film forming chamber 3, and the auxiliary gas supply nozzle supplies a specific flow of auxiliary gas into the film forming chamber 3, and causes the The film chamber 3 is set to a specific pressure according to the film formation conditions. Then, the high-frequency antenna 11 is supplied with power from the high-frequency power source 12 to generate a high frequency. Thus, the material gas in the film-forming chamber 3 is discharged to cause it to discharge. One part becomes a plasma state. The plasma will collide with other neutral molecules to further ionize or excite the neutral molecules. The active particles thus generated will be adsorbed by the substrate 6 and effectively generate a chemical reaction, and Stacked into cvd film. However, In the case of a planar loop high-frequency antenna Π disposed on the upper side of 85882 -13- 200415710 opposite to the substrate 6, ^ ^ ^ & I-coupled plasma CVD device 1 The outermost peripheral edge of the frequency antenna 11 ^, spring circle <magnetic field lines (magnetic flux density lines) will pass through the valley of 2 walls (tube surface skin wood ^ Yu * magnetic field lines (magnetic flux density lines) pass through the wall surface (capacity of Cry 2) ), Because buckets, ions, ions, or ions will move along the magnetic field lines, it may be caused by electrons or early flying ions striking the wall of container 2 or particles due to etching. ', Because of this, in this embodiment, a brother-antenna 'is arranged around the antenna located on the outside of the ceiling, and it is configured so that the current supplied to the antenna opposite to the current supplied to the second antenna. … As shown in FIG. 2, the high-frequency antenna n serves as the antenna 11a with a portion having the same diameter as that of the smallpox surface, and the portion m located outside the smallpox surface is the antenna m. In addition, a portion of the second antenna m is configured to supply a current from the high-frequency power source 12 in a connection state opposite to the portion of the antenna Ua (second power supply means). That is, in the part of the second antenna lib, the high-frequency power source 12 is connected to the ground-side coil of the part of the antenna 11a, and the coil of the part of the antenna 11a to which the high-frequency power source 12 is connected is made. It is grounded. As a result, in the part of the second antenna Ub, a magnetic field line F2 opposite to the magnetic field line is about to be generated, so that the magnetic field line passing through the wall surface (tube surface) of the container 2 and the reverse magnetic field line F2 are combined to pass through the wall surface of the container 2 ( The surface of the container 2 has a reduced magnetic field line. Therefore, the magnetic flux density in the wall surface direction of the wall position of the container 2 can be reduced to eliminate the cause of overheating caused by electrons or ions hitting the wall of the container 2 or particles caused by etching. In addition, because the antenna lla is slightly the same diameter as the smallpox surface, it can produce a uniform range of children's pulp in a wide range relative to the capacity -14- 85928 200415710 _, which can not be efficient .. ^ ^ The wide range of gardens can generate 10,000 plasmas; In Guzhai 2, the density of the wall surface can also be reduced, and the plasma C VD device has been implemented to eliminate the cause of overheating or the formation of particles due to etching. Next, according to Fig. 3 to Fig. 5, JL and others with the antenna and power supply handpiece # and the plasma CVD device which have a long-standing example of 讪, Lu, A y 丨, and ^^ will be explained. He follows her example However, because the components other than the antenna and the power supply means are still in phase with those in Figure 1, they are described in a plan view corresponding to Figure 3 and Figure 5 in Figure 2, and the structure description is slightly the same. The second embodiment will be described below with reference to FIG. 3. In the example shown in FIG. 3, the structure of the high-frequency antenna 11 as an antenna still has a planar loop shape as in FIG. ㈣ It is connected to the antenna mountain, and the second high-frequency power source 21 as the second power supply means is connected to the part of the second antenna ub. And the part configured for the second antenna nb is opposite to the part of the antenna 1U In the connected state, the current is supplied by the high-frequency power source 21. That is, in the part of the second antenna 11b, the high-frequency power source 12 is connected to the ground-side coil of the part of the antenna Ua, and the part of the antenna Ha The coil for one side to which the high-frequency power source 12 is connected is brought into a grounded state. Thus, as in the embodiment shown in FIG. 1, a magnetic field line F2, which is opposite to the magnetic field line F1, is about to be generated in the part of the second antenna lb. So that the magnetic force penetrating the wall surface (tube surface) of the container 2 The combination of F1 and the opposite magnetic field lines! ^ 2 reduces the magnetic field lines passing through the wall surface (wide surface) of the container 2. Therefore, the magnetic flux density in the wall surface direction of the wall position of the container 2 can be reduced, and the collision of electrons or ions into the capacity can be eliminated. 85928 -15- 200415710 The cause of the overheating complaint caused by the wall of the device 2 or the particles caused by the effect of insect engraving. In addition, because the antenna 11 a is slightly the same diameter as the ceiling, it can have a wide range of freshness in the size of the container. Generating a uniform plasma can maintain the uniformity in the container 2 without reducing the efficiency. Therefore, even if the electric device is generated in the container 2 in a wide range, the magnetic flux density in the direction of the wall can be reduced, and the implementation can be eliminated. Plasma CVD devices that cause overheating or cause particles due to etching. The third embodiment will be described below with reference to FIG. 4. In the embodiment shown in FIG. 4, a planar loop high-frequency antenna 22 as an antenna having a diameter substantially the same as that of the ceiling 4 is arranged, and the outside of the high-frequency power source 2 is located outside the ceiling, and another structure is arranged.第二天 线 23。 The second antenna 23. The high-frequency power source 12 is connected to the high-frequency antenna 22, and the second high-frequency power source 24 as a second power supply means is connected to the second antenna 23. The high-frequency antenna 22 and the second antenna 23 are respectively connected to the high-frequency power source 12 and the second high-frequency power source 24 in the same direction, but the second antenna 23 is connected to the phase shifter 25 as a phase changing means. The second high-frequency power source 24 is connected. The second high-frequency power source 24 via the phase shifter 25 to supply the second antenna 23 with a current in antiphase with the current sent from the high-frequency power source 12 to the high-frequency antenna 22 can be implemented as shown in FIG. 1. For example, in the part of the second antenna 23, the magnetic field lines opposite to the magnetic field lines of the high-frequency antenna 22 will be generated, so that the magnetic field lines passing through the wall (tube surface) of the device 2 are combined with the opposite magnetic field lines to pass through the container. The magnetic field lines on the wall surface (tube surface) of 2 are reduced. Therefore, the magnetic flux density in the direction of the wall surface at the wall position of Rong Cry 2 can be reduced to eliminate the cause of overheating caused by electrons or ions 85928 -16- 200415710 hitting the wall of the container 2 or particles caused by etching. In addition, since the antenna 22 is slightly the same diameter as the ceiling surface, it can generate a uniform plasma over a wide range with respect to the size of the container, and can maintain the uniformity in the container 2 under the condition of no efficiency. Therefore, even if the plasma is generated in the container 2 in a wide range, the magnetic flux density in the direction of the wall surface can be reduced, and a plasma CVD device that eliminates the cause of overheating or the formation of particles due to etching can be realized. A fourth embodiment is described below with reference to FIG. 5. In the embodiment shown in FIG. 5, the concentric loop antennas 3U, 3lb, Mc, and 3id are used to form and arrange a high-frequency antenna 31 having the same diameter as that of the ceiling 4. The loop-shaped second antenna 32 is arranged outside the ceiling. The high-frequency power source 2 is connected in parallel to the antennas 31a, 31b, 31c, 31d, and the second antenna 32 is connected to the high-frequency power source 12 in a connection state opposite to the loop antenna 31. That is, the second antenna 32 is connected to the high-frequency power source 12 in a state opposite to that of the high-frequency power source 12 of the antenna 31 and the ground side. By this, as in the embodiment shown in FIG. 1, in the portion of the second antenna 32, a magnetic line of force opposite to the magnetic line of the portion of the antenna 31 is about to be generated, so that the magnetic line of force penetrating the wall surface (cylindrical surface) of the container 2 and On the contrary, the magnetic field lines are combined to reduce the magnetic field lines passing through the wall surface (tube surface) of the capacitive state 2. Therefore, the magnetic flux density in the direction of the wall surface of the wall position of the container 2 can be made small to eliminate the cause of overheating caused by electrons or ions colliding with the wall of the container 2 or particles caused by etching. In addition, because the antenna 3 1 is slightly the same diameter as the ceiling, it can generate a uniform plasma in a wide range with respect to the size of the capacity 85928 -17- 200415710. It can maintain the inside of the container 2 without reducing the efficiency. Uniformity. Therefore, even if the electric device generates ash U within a wide range, the magnetic flux density in the direction of the wall surface can be reduced, and a plasma CVD device that causes overheating or particle formation due to etching can be realized after elimination. Next, examples of other embodiments will be described. The invention relates to a plasma film forming device, which is used to supply a raw material gas (material gas; for example, M%) to a film forming chamber, so that a plasma is generated, and an "activated atom · molecule" is produced thereon on a substrate surface. Those who produce silicon oxide or nitride nitride 4 films are powered by a flat loop antenna supplied from the ceiling side, and the plasma is generated in a cylindrical container by inductive coupling, so that silicon oxide or silicon nitride is formed. The film is on the surface of the substrate. And the substrate is located in a region that will become a low electron temperature even if the plasma is high in density, and the area where the plasma is high in density is 10! Electron density, and the electric paddle will become a region with a low electron temperature ^ The sub-temperature will be a region below 1 electron volt. Furthermore, a high-frequency power supply of 10 MHz to 30 MHz is connected to the antenna, and the substrate temperature will become丨 Set the distance from the bottom of the antenna to the substrate to 190 mm or more in the area of electronic volts. In addition, connect a high-frequency power source of 10 MHz to 30 MHz to the antenna, and the temperature of the substrate will be 1 electron volt. The distance from the antenna to the substrate is set to more than 200 mm. Therefore, the substrate can be located in a region where the electron temperature is low even if the plasma is high density, so it is a region where the electron temperature is low In addition, it is possible to suppress damage to the components of the substrate caused by charging 85928 -18-200415710. & Furthermore, the present invention can also be applied to the generation of plasma and the atoms that are excited and deactivated there. The molecules are applied to the surface of the substrate. Plasma processing apparatus for processing with ash or ashing. The following describes an embodiment in which the present invention is applied to a plasma film forming apparatus (plasma CVD apparatus) based on the drawings. As shown in FIG. 6, a plasma CVD apparatus 81 has A cylindrical aluminum cylindrical container container) 82, and a film forming chamber 3 (for example, a diameter of 25 mm to 500 mm) are formed in the preparation 82. A circular insulating material (for example, Alumina; Al1ζ〇3 thickness 30 mm) ceiling 84, in the film forming chamber μ in the center of the container 82 is provided with a wafer support table 85. The wafer support table 85 has a disk-shaped mounting for the semiconductor substrate 86 Section 87, and the substrate% is, for example, by electrostatic chuck means 8 8 is held on the mounting portion 87. A high-frequency antenna 91 as an antenna, such as a circular coil (planar loop), is arranged above the ceiling 84, and the high-frequency antenna 91 is connected to the south frequency via an unillustrated integrator. A power source 92 (AC power source) is connected (a high-frequency source). When power is supplied to the high-frequency antenna 91, electromagnetic waves can be incident on the film-forming chamber of the container 82. The electromagnetic wave incident on the guest 82 ionizes the gas in the film forming chamber 83 to generate a plasma. A south frequency source with an output of 2 kW to 15 kW (for example, 5 kW) and 10 _2 to 30 ΜΗζ (for example, 1 3 · 56 MHz) is connected to a high-frequency antenna 9 丄. A gas supply nozzle 13 for supplying a material gas such as silicon methane (e.g., SiH4) is provided in the container 82, so that the gas supply nozzle 13 supplies a raw material gas as a film forming material (e.g., Si02) to the film forming chamber 83. In addition, the container 2 is provided with 85928 -19- 200415710 to supply an inert gas (rare milk m) such as argon or helium, or an auxiliary gas such as gas or hydrogen. Insulating materials made of insulating materials (such as alumina; door 1, 2, 03) ) < Auxiliary gas supply nozzle (figure 7F is omitted), and a vacuum device 94 is used to make the volume cry ^ Each ▲ Preparation 82 is maintained at a specific pressure (for example, about 0.1 Pa to 10 Pa of decompression gas Fenbu) 'Although omitted As shown in the figure, the substrate 86 is installed in and out of the valley 82. The substrate 86 is moved in and out from the transportation (not shown). The electric paddle CVD apparatus 81, the substrate 86 is Shao 87 is placed on the wafer support table 85 and held (for example, it is called by electrostatic clamping means, and a specific flow of raw material gas is supplied to the film formation chamber by the gas supply nozzle 93, and the auxiliary gas supply nozzle will The auxiliary gas with a specific flow rate is supplied into the film formation chamber, and the formation M 1: 83 is set to a specific pressure corresponding to the film formation conditions. Then, the high-frequency power source 92 is supplied with power to the high-frequency antenna 91 to generate a high frequency. As a result, the material gas in the film forming chamber 83 is discharged and a part of the material gas is discharged. Plasma state. The plasma will collide with other neutral molecules to further ionize or excite the neutral. The active particles generated in this way will be adsorbed by the substrate 86 and effectively generate a chemical reaction, which will accumulate. The substrate 86 held on the mounting portion 87 of the wafer support table 85 is located in a region where the density will become a low electron temperature even if the plasma is present. In other words, the position of the substrate 86 (the height of the mounting portion 87) The distance between the straight soil substrate 86 from the lower surface of the high-frequency antenna 91 can be set from 190 mm to 250 mm (preferably about 200 mm). The mounting portion 87 also has a structure that can be raised and lowered freely. Adjust the position of the substrate 86. Since the position of the substrate 86 is set from the bottom of the high-frequency antenna 91 to the distance of the substrate 86 Η from 190 mm to 2 50 mm, the electrons based on 85928-20-200415710 can be made. The low-density plate 86 with a density below high density volts (eV) is located in an electron region with more than 1010 electrons per i cm3, and the electron temperature will become 1 electron domain. 0 The degree of bifurcation is high but the electron temperature is low. And can suppress the cause Since the electricity makes the substrate 86 in the area of even the electrons, it is because the electron temperature is that the components of the substrate 86 are destroyed. The relationship between the distance H from the underside of the high-frequency antenna 91 to the substrate 86 and the electron temperature is described below with reference to FIG. 7. As shown in Figure 7, the distance Η is in the range from 0mm to less than 19mm, and the electron temperature is several eV. When the distance Η becomes 190 mm, the electron temperature becomes ι ^, and when the distance Η is 190 mm or more The electron temperature will be less than or equal to ev. Therefore, the distance from the bottom of the high-frequency antenna 91 to the substrate 86 is set to 190 mm to mm, which can be used as a low electron temperature region to suppress the damage to the substrate% caused by charging. Even if the distance 超过 exceeds 300 mm, it can be used as a low electron temperature region to suppress the destruction of the components of the substrate 86 due to charging. However, when the distance ^^ is too large, the film formation rate will decrease and delay the film formation time. Therefore, it is known that if it is desired to suppress the destruction of the components of the substrate 86 caused by charging while maintaining the film formation rate, the distance Η from the underside of the high-frequency antenna 91 to the substrate 86 is set to 190 111 111 to 250 mm. can. In addition, even if the distance 超过 exceeds 200 mm, the electronic temperature can be sufficiently reduced without the film formation rate falling, and the destruction of the components of the substrate 86 due to charging can be reliably suppressed. When the distance η is set to 200 mm for confirmation, even when the area ratio of the gate emulsified film to the electrode is two million to one, 85928 -21-200415710 1000 films can be formed, and even one caused by charging can be obtained. The failure of the components of the substrate 86 could not be seen. Therefore, since the position of the substrate 86 is set such that the distance from the lower surface of the high-frequency antenna 91 to the substrate 86 is from 190 mm to 250 mm, even if the density of the electrons is 1010 or more per 1 cm3, The high-density plasma region can also be a region where the electron temperature is less than 1 electron volt, and the substrate 86 is located in a region where the electron density is low but the electron temperature is low. Region, it is possible to suppress damage to the components of the substrate 86 due to charging. Industrial Applicability To sum up, in a type of plasma generated in the cylindrical container by the power supply from the ceiling surface of the cylindrical container, the excited and activated atoms and molecules are on the substrate surface. In the plasma film formation method for forming a film, since the film is formed on the outside of the ceiling to generate a current inverse of the supply current for the generation of the plasma, it is possible to achieve a uniform plasma generation in the barrel over a wide range. Plasma film formation methods that can reduce the magnetic flux density in the direction of the wall surface in the container. Another is a plasma processing method in which a plasma is generated in a cylindrical container by supplying power from the ceiling surface of the cylindrical container, and the substrate surface is treated with excited, activated atoms and molecules. Since the substrate is treated in a region where the plasma has a low electron temperature even if the plasma density is high, the substrate can be positioned in a region where the electron temperature is low despite the high electron density. Since this position is a region where the electron temperature is low, it is possible to suppress damage to the components of the substrate caused by charging. 85928 -22- 200415710 [Brief description of the drawings] FIG. 1 is a schematic side view of a plasma CVD apparatus according to an embodiment of the present invention. Fig. 2 is a plan view of a plasma CVD apparatus showing an antenna shape. Fig. 3 is a plan view of a plasma CVD apparatus showing an antenna shape. Fig. 4 is a plan view of a plasma cvD device showing an antenna shape. Fig. 5 is a plan view of a plasma cvD device showing an antenna shape. 6 is a schematic side view of a plasma cvd device according to another embodiment of the present invention. Figure 7 is a graph showing the relationship between the distance from the bottom of the ceiling to the substrate and the electron temperature. [Illustration of Symbols in Drawings] 1 Plasma film forming device (plasma CVD device) 2 Cylindrical container (container) 3, 83 Film forming chamber 4 Ceiling 5, 85 Wafer support table 6, 86 Substrate 7, 87 Mounting Section 8 supports shafts 11, 22, 31, 91 directional antennas 11a5 31, 31a, antennas 31b, 31c, 31d 11b, 23, 32 second antennas 12, 92 directional power supply 13 gas supply nozzle 85928 -23- 200415710 14 Vacuum device 21, 24 Di Ernan frequency power supply 25 Phase shifter Fl, F2 Magnetic field line 距离 Distance 88 Static clamp means 85928 -24-