US20050156188A1 - Nitride semiconductor light emitting device and method of manufacturing the same - Google Patents

Nitride semiconductor light emitting device and method of manufacturing the same Download PDF

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Publication number
US20050156188A1
US20050156188A1 US10/839,284 US83928404A US2005156188A1 US 20050156188 A1 US20050156188 A1 US 20050156188A1 US 83928404 A US83928404 A US 83928404A US 2005156188 A1 US2005156188 A1 US 2005156188A1
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layer
nitride semiconductor
type nitride
semiconductor layer
light emitting
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Jae Ro
Sang Cho
Seung Chae
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD. reassignment SAMSUNG ELECTRO-MECHANICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAE, SEUNG WAN, CHO, SANG DEOG, RO, JAE CHUL
Publication of US20050156188A1 publication Critical patent/US20050156188A1/en
Priority to US11/431,001 priority Critical patent/US20060202217A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
    • B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
    • B09B3/00—Destroying solid waste or transforming solid waste into something useful or harmless
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/05—Stirrers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/60—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a horizontal or inclined axis
    • B01F27/70—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a horizontal or inclined axis with paddles, blades or arms
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
    • C12M27/00—Means for mixing, agitating or circulating fluids in the vessel
    • C12M27/02—Stirrer or mobile mixing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Definitions

  • the present invention relates to a nitride semiconductor light emitting device, and more particularly to a nitride semiconductor light emitting device and a method of manufacturing the same, which comprises a B metal bi-layer and an N metal bi-layer acting as electrodes in the nitride semiconductor light emitting device, thereby providing an ohmic contact at room temperature without additional heat treatment, an improved appearance and superior wire bonding characteristics.
  • a nitride semiconductor using a nitride such as gallium nitride (GaN)
  • GaN gallium nitride
  • a nitride semiconductor light emitting device can generate light having wavelengths of green, blue and UV light, and with a rapid enhancement of brightness by technological development, it also has many applications in several fields, such as a full color video display board, an illuminating apparatus, etc.
  • Such a nitride semiconductor uses a nitride semiconductor material with the formula Al x In y Ga (1-x-y) N (where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1), and investigations are being actively undertaken particularly on the semiconductor light emitting device using GaN.
  • the nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer, an active layer with a multi-well structure and a p-type nitride semiconductor layer sequentially laminated in this order on a substrate, in which a predetermined portion of the active layer and p-type nitride semiconductor layer and active layer is removed so that a predetermined portion of the n-type nitride semiconductor layer is exposed.
  • an n-side electrode (hereinafter, also referred to as “N metal”) is formed, while on the p-type nitride semiconductor layer, a p-side bonding pad (hereinafter, also referred to as “B metal”) is formed on a transparent layer (hereinafter, also referred to as “T metal layer”) previously formed thereon for providing an ohmic contact and enhancing current injection efficiency.
  • N metal n-side electrode
  • B metal p-side bonding pad
  • the electrodes in a general nitride semiconductor light emitting device can comprise the N metal, the T metal layer and the B metal.
  • the N metal should provide the ohmic characteristics in contact with the n-type nitride semiconductor layer, while the T metal layer should exhibit a high transmissivity for light and the ohmic characteristics in contact with the p-type nitride semiconductor layer.
  • the B metal since the B metal is used as a bonding pad for wire bonding, the B metal should exhibit excellent bonding characteristics in order to provide a secure wire bonding.
  • the N metal should also exhibit excellent bonding characteristics and ohmic characteristics in contact with the n-type nitride semiconductor layer.
  • the T metal layer in contact with the p-type nitride semiconductor layer is heat treated after a bi-layer of Ni/Au or an ITO layer is formed, and the B metal for the wire bonding is prepared in the form of a bi-layer of Cr/Au on the T metal layer.
  • the N metal acting as the n-side electrode is prepared in the form of a bi-layer of Ti/Al on the exposed surface of the n-type nitride semiconductor layer.
  • Al is likely to be dissolved by alkaline solution and to become defective during subsequent machining processes, thereby deteriorating the appearance of the nitride semiconductor light emitting device.
  • Al inherently causes defectiveness in the wire bonding due to its inferior bonding characteristics.
  • the present invention has been made in view of the above problems, and it is an object of the present invention to provide a nitride semiconductor light emitting device and a method of manufacturing the same, which comprise a B metal bi-layer of Ti/Au and an N metal bi-layer of Ti/Au acting as electrodes in the nitride semiconductor light emitting device, thereby concurrently forming the B metal and N metal, providing an ohmic contact at room temperature without additional heat treatment, improving an inferiority in appearance and providing excellent wire bonding characteristics.
  • a nitride semiconductor light emitting device comprising:
  • the p-side bonding pad may comprise a Ta layer with a thickness of 50 ⁇ ⁇ 1,000 ⁇ , and an Au layer with a thickness of 2,000 ⁇ ⁇ 7,000 ⁇ formed on the Ta layer.
  • the n-side bonding pad may comprise a Ta layer with a thickness of 50 ⁇ ⁇ 1,000 ⁇ , and an Au layer with a thickness of 2,000 ⁇ ⁇ 7,000 ⁇ formed on the Ta layer.
  • a method of manufacturing a nitride semiconductor light emitting device comprising the steps of:
  • the steps e) and f) may be executed at the same time.
  • the step e) may comprise the step of sequentially depositing Ta and Au on the p-type nitride semiconductor with an electron beam evaporating process.
  • the step f) may comprise the step of sequentially depositing Ta and Au on the n-type nitride semiconductor with an electron beam evaporating process.
  • the method of the present invention may further comprise the step of heat treating the p-side bonding pad and the n-side bonding pad at a temperature of 400° C. ⁇ 600° C.
  • FIG. 1 is a sectional view of a nitride semiconductor light emitting device according to the present invention
  • FIGS. 2 a to 2 d are photographs comparing the appearance of a conventional n-side electrode and that of an n-side electrode according to the present invention
  • FIGS. 3 a and 3 b are graphs showing ohmic characteristics of the conventional n-side electrode comprising Ti/Al and those of the n-side electrode comprising Ti/Au according to the present invention.
  • FIG. 4 is a graph showing the result of the test examining the reliability of the conventional nitride semiconductor light emitting device and that of the nitride semiconductor light emitting device according to the present invention.
  • FIG. 1 is a sectional view of a nitride semiconductor light emitting device according to the embodiment of the present invention.
  • the nitride semiconductor light emitting device comprises a substrate 11 , preferably a sapphire substrate, for growing a gallium nitride-based semiconductor material, a buffer layer 11 a formed on the substrate 11 for alleviating the lattice mismatching between a sapphire substrate and an n-type nitride semiconductor layer to be grown on the substrate, the n-type nitride semiconductor 12 layer formed on the buffer layer, an active layer 13 formed on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer 12 is exposed, a p-type nitride semiconductor layer 14 formed on the active layer, a transparent electrode layer 15 formed on the p-type nitride semiconductor layer, a p-side bonding pad 17 in the form of a bi-layer of Ta
  • the sapphire substrate is more representative. With regard to this, it is impossible to provide a commercially available substrate which has an identical crystal structure to that of a nitride semiconductor material grown on the substrate 11 , and which is in lattice matching with the nitride semiconductor material. Meanwhile, the sapphire substrate has a crystal structure of a hexa-rhombic (R3) symmetry with lattice parameters of 13.001 ⁇ in the direction of the c-axis and a lattice spacing of 4.765 ⁇ in the direction of the a-axis.
  • R3 hexa-rhombic
  • the indices of the sapphire plane contain C(0001) plane, A(1 1 20) plane, R(1 1 02) plane, etc.
  • the sapphire substrate is preferred to the SiC substrate, due to the relative easy of growing a GaN thin film on the C plane therein, lower price, and stability at a high temperature.
  • the buffer layer 11 a is formed to alleviate the lattice mismatching between the substrate 11 and the n-type nitride semiconductor layer grown on the substrate 11 .
  • the buffer layer GaN layer or AlN layer with a thickness several dozen nm is typically used.
  • the n-type nitride semiconductor layer 12 comprises a semiconductor material doped with n-type impurities, having the formula Al x In y Ga (1-x-y) N (where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1). Specifically, GaN is usually employed.
  • the n-type nitride semiconductor layer 12 is grown on the substrate with a well-known deposition process, such as the MOCVD (Metal Organic Chemical vapor Deposition) process or the MBE (Molecular Beam Epitaxy) process.
  • the active layer 13 has a quantum-well structure and may comprise GaN or InGaN.
  • the p-type nitride semiconductor layer 14 comprises an n-type semiconductor material doped with p-type impurities and with the formula Al x In y Ga (1-x-y) N (where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
  • the p-type nitride semiconductor layer 14 is also grown on the active layer 13 with a well-known deposition process, such as the MOCVD process or the MBE process.
  • the transparent electrode layer 15 (which is also referred to as a T metal) is formed on the p-type nitride semiconductor layer 14 .
  • the transparent electrode layer 15 may comprise a metal with a relatively high transmissivity, and a transparent electrode layer comprising a bi-layer of Ni/Au is widely used. It is known that the transparent electrode layer comprising the bi-layer of Ni/Au lowers a forward voltage (V f ) by providing an ohmic contact along with an increase of current injection areas.
  • the n-side electrode 16 (which is also referred to as an N metal) is formed in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer 12 .
  • the n-side electrode 16 should have good wire bonding characteristics so as to form a wire bonding for supplying the electric current, and have the ohmic contact with the n-type nitride semiconductor layer.
  • the n-side electrode 16 comprising Ta/Au is prepared by forming an Ta layer 16 a with a thickness of 50 ⁇ ⁇ 1,000 ⁇ on the p-type semiconductor layer and forming an Au layer 16 b with a thickness of 2,000 ⁇ ⁇ 7,000 ⁇ on the Ta layer 16 a , with the well-known electron beam evaporating process.
  • the n-side electrode 16 comprising Ta/Au has characteristics of providing the ohmic contact even at room temperature.
  • the conventional n-side electrode 16 using Ti/Al does not provide the ohmic contact at room temperature, the ohmic characteristics thereof should be improved through heat treatment at high temperature.
  • the n-side electrode comprising Ta/Au can provide the ohmic contact at room temperature, additional heat treatment is not required.
  • the process of manufacturing the nitride semiconductor light emitting device can be simplified, thereby reducing costs.
  • Al which is likely to be corroded in alkali solution and defected in subsequent processes is not used, the present invention has an advantage that the appearance of the nitride semiconductor light emitting device is not defected.
  • the p-side bonding pad 17 is prepared to form the wire bonding for the electric current, and prepared on the transparent electrode layer 15 in the form of the bi-layer comprising the Ta layer and the Au layer, like the n-side bonding pad 16 .
  • the p-side bonding pad 17 (which is also referred to as B metal) comprising Ta/Au may be prepared by forming a Ta layer 17 a with a thickness of 50 ⁇ ⁇ 1,000 ⁇ on the p-side nitride semiconductor and forming an Au layer 17 b with a thickness of 2,000 ⁇ ⁇ 7,000 ⁇ on the Ta layer 17 a , using the well-known E-beam evaporating process.
  • the p-side bonding pad 17 comprising Ta/Au consists of materials that are identical to those of the n-side electrode 16 , it can be formed concurrently with the n-side electrode.
  • the present invention has an advantage of providing a more simplified process than the conventional process, separately forming the n-side electrode and the p-side bonding electrode.
  • the n-side electrode 16 and the p-side bonding electrode 17 have good ohmic characteristics without heat treatment. In addition, they also have good ohmic characteristics with heat treatment at 400° C. ⁇ 600° C. Thus, the n-side electrode 16 and the p-side bonding electrode 17 in the nitride semiconductor light emitting device of the present invention are allowed to have heat treatment at a temperature of 400° C. ⁇ 600° C. Further, it is known that the bonding characteristics of Au are superior to those of Al. Thus, the n-side electrode and the p-side bonding electrode according to the present invention have superior bonding characteristics to the conventional electrode.
  • the present invention also provides a method of manufacturing the nitride semiconductor with the construction as described above.
  • the method of manufacturing the nitride semiconductor according to an embodiment of the present invention will now be described with reference to FIG. 1 .
  • the n-type nitride semiconductor layer 12 , the active layer 13 , and the p-type nitride semiconductor layer 14 are sequentially formed on the sapphire substrate 11 .
  • These layers can be grown with a well-known process, such as the MOCVD process or the MBE process.
  • a predetermined portion of the p-type nitride semiconductor layer 14 and active layer 13 is removed so as to expose a predetermined portion of the n-type nitride semiconductor layer 14 .
  • the shape of the constructions formed by the removing step can be variously prepared depending on the places where the electrodes are to be formed. Various shapes and sizes of electrodes can also be provided. For example, this step can be executed in a manner that a portion in contact with one of the edges can be removed and the shape of electrodes can be formed to have structure extending along a side for dissipating the current density.
  • the transparent electrode layer 15 is sequentially formed on the p-type nitride semiconductor layer 14 .
  • the transparent electrode layer 15 is generally prepared in the form of the bi-layer of Ni/Au and can be deposited using the well-known electron beam evaporating process.
  • the p-side bonding pad 17 in the form of the bi-layer of Ta/Au and the n-side electrode 16 in the form of the bi-layer of Ta/Au are concurrently formed on the transparent electrode layer 15 and on the exposed portion of the n-type nitride semiconductor layer 12 , respectively. Since the p-side bonding pad 17 and the n-side electrode 16 consist of the same materials, there are provided the characteristics that these can be concurrently formed with one process. By this, the process of the invention can be more simplified than the conventional process separately forming the n-side electrode and the p-side bonding electrode.
  • the p-side bonding pad 17 and the n-side electrode 16 may be formed by sequentially depositing Ta and Au with the well-known electron beam evaporating process.
  • the Ta layer consisting of the n-side electrode 16 and the p-side bonding electrode 17 has a thickness of 50 ⁇ ⁇ 1,000 ⁇
  • the Au layer has a thickness of 2,000 ⁇ ⁇ 7,000 ⁇ on the Ta layer.
  • the n-side electrode 16 and the p-side bonding electrode 17 according to the invention provide good ohmic characteristics without heat treatment. In addition, they also may provide good ohmic characteristics even after the heat treatment at 400° C. ⁇ 600° C. Thus, according to the method of the present invention, it does not matter if the n-side electrode 16 and the p-side bonding electrode 17 of the present invention are heat treated at a temperature of 400° C. 600° C.
  • FIGS. 3 a and 3 b are a graph showing ohmic characteristics of the conventional n-side electrode comprising Ti/Al and those of the n-side electrode comprising Ta/Au of the present invention.
  • the conventional n-side electrode comprising Ti/Al does not provide the ohmic contact at room temperature. Instead, when the conventional n-side electrode comprising Ti/Al is heat treated at 500° C. ⁇ 600° C., it generates the ohmic contact at room temperature.
  • the conventional Ti/Al electrode provides the ohmic contact when being subjected to heat treatment at a high temperature of 500° C. or more.
  • the n-side electrode comprising Ta/Au of the present invention exhibits relatively good ohmic characteristics even at room temperature.
  • the n-side electrode of the present invention exhibits a good ohmic contact at 400° C. ⁇ 600° C., not at 700° C., it does not matter that the Ta/Au electrode of the present invention is heat treated at 400° C. ⁇ 600° C.
  • FIG. 4 shows the result of the test examining the reliability of the conventional nitride semiconductor light emitting device having the conventional n-side electrode comprising Ti/Al and that of the nitride semiconductor light emitting device having the n-side electrode comprising Ta/Al of the present invention.
  • the nitride semiconductor light emitting device having the conventional n-side electrode comprising Ti/Al exhibits a reduction in brightness of about 25% after 300 hours of use
  • the nitride semiconductor light emitting device having the n-side electrode comprising Ta/Al of the present invention exhibits a reduction in brightness of about 20% after 300 hours of use.
  • the reliability of the light emitting device according to the present invention is considerably improved.
  • the present invention can simplify the manufacturing process by providing the p-side electrode and the n-side electrode comprising the bi-layer of Ti/Au, respectively, and reduce the defects in the appearance and the wire bonding characteristics by not using Al constituting the conventional electrode.
  • the present invention provides an excellent nitride semiconductor light emitting device with a superior reliability to the conventional light emitting device.

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WO2007048345A1 (en) 2005-10-27 2007-05-03 Lattice Power (Jiangxi) Corporation SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE FOR N-POLAR InGaAlN SURFACE
US20090057707A1 (en) * 2007-08-22 2009-03-05 Hiroshi Katsuno Semiconductor light emitting device and method for manufacturing same
US20100051987A1 (en) * 2008-08-28 2010-03-04 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing same
US20100072508A1 (en) * 2008-09-24 2010-03-25 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device and method for producing the same
US20100167478A1 (en) * 2006-05-31 2010-07-01 Panasonic Corporation Field effect transistor having reduced cotnact resistance and method for fabricating the same
US8884329B2 (en) 2011-04-20 2014-11-11 Toyoda Gosei Co., Ltd. Semiconductor light-emitting element, electrode structure and light-emitting device
US8987021B2 (en) 2012-06-08 2015-03-24 Toyoda Gosei Co., Ltd. Manufacturing method of light-emitting device
CN110010739A (zh) * 2012-11-02 2019-07-12 晶元光电股份有限公司 发光元件及其制造方法

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KR100691123B1 (ko) * 2005-09-27 2007-03-09 엘지전자 주식회사 수직형 발광 다이오드의 제조방법
JP4868821B2 (ja) * 2005-10-21 2012-02-01 京セラ株式会社 窒化ガリウム系化合物半導体及び発光素子
CN100474642C (zh) * 2005-10-27 2009-04-01 晶能光电（江西）有限公司 含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
KR101281394B1 (ko) * 2012-08-08 2013-07-02 영남대학교 산학협력단 이중 금속 전극층을 이용한 발광 다이오드 및 그 제조 방법
KR102140273B1 (ko) * 2014-01-08 2020-07-31 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
CN103904108B (zh) * 2014-03-28 2016-08-17 上海大学 具有石墨烯电极的GaN基半导体器件及其制备方法
CN111403281A (zh) * 2020-03-23 2020-07-10 南方科技大学 一种半导体器件电极的制作方法及半导体欧姆接触结构

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