US20050112019A1 - Aluminum-alloy reflection film for optical information-recording, optical information-recording medium, and aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording - Google Patents

Aluminum-alloy reflection film for optical information-recording, optical information-recording medium, and aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording Download PDF

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US20050112019A1
US20050112019A1 US10/971,142 US97114204A US2005112019A1 US 20050112019 A1 US20050112019 A1 US 20050112019A1 US 97114204 A US97114204 A US 97114204A US 2005112019 A1 US2005112019 A1 US 2005112019A1
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aluminum
alloy
optical information
recording
reflection film
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Junichi Nakai
Yuuki Tauchi
Katsutoshi Takagi
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Kobe Steel Ltd
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Kobe Steel Ltd
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Assigned to KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD. reassignment KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAKAI, JUNICHI, TAKAGI, KATSUTOSHI, TAUCHI, YUUKI
Publication of US20050112019A1 publication Critical patent/US20050112019A1/en
Priority to US12/767,325 priority Critical patent/US20100202280A1/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium

Definitions

  • the invention relates to a technical field concerning an aluminum-alloy reflection film for optical information-recording, an optical information-recording medium, and an aluminum-alloy sputtering target for formation of an aluminum-alloy reflection film for optical information-recording, and in particular, to a technical field concerning a reflection film having high reflectance, together with low thermal conductivity, low melting temperature, and high corrosion resistance to enable marking of a disc with the use of a laser, and so forth, after formation of the disc, in the case of a medium (ROM) for reproducing only, particularly among optical information-recording media such as CD, DVD, Blue-ray Disc, HD-DVD, and so forth, a sputtering target for formation of the reflection film, and an optical information-recording medium provided with the reflection film.
  • ROM medium
  • optical discs There are several kinds of optical discs, and on the basis of recording reproduction principles, the optical discs are broadly classified into three kinds, that is, a read only type, write once type, and rewritable type.
  • an optical disc for reproducing only has a construction in which a reflection film layer formed of Al, Ag, Au, and so forth, as a matrix, is provided after forming recording data at the time of fabrication according to pits and lands provided on a transparent plastic base body, as shown in FIG. 1 by way of example, and at the time reading data, data reproducing is executed by detecting phase difference and reflection difference of a laser beam emitted to the disc.
  • a reflection film layer formed of Al, Ag, Au, and so forth, as a matrix
  • FIG. 1 is a schematic illustration showing a construction of an optical disc, in section, and in the figure, reference numeral 1 denotes a polycarbonate base body, 2 a translucent reflection layer (Au, Ag alloy, Si), 3 an adhesion layer, 4 a total reflection film layer (Al alloy), and 5 a UV-curing resin protection layer.
  • reference numeral 1 denotes a polycarbonate base body, 2 a translucent reflection layer (Au, Ag alloy, Si), 3 an adhesion layer, 4 a total reflection film layer (Al alloy), and 5 a UV-curing resin protection layer.
  • Such optical discs for reproducing only are produced on a large scale by press working using a stamper with an information pattern formed beforehand at the time when the discs are fabricated, so that it has been difficult to provide individual discs with IDs, respectively.
  • BCA Band Cutting Area
  • Such optical discs for reproducing only there has been seen a start of a tendency that discs of the level-gate type, BCA (Burst Cutting Area) type, and so forth, with IDs recorded for the individual discs, respectively, by use of a dedicated apparatus, after the formation of the discs, become the norm.
  • marking of a disc with an ID is implemented mainly by a method whereby an aluminum-alloy of a reflection film is melted by emitting a laser beam to the disc after fabricated, thereby boring holes in the reflection film.
  • the Al-alloy is high in thermal conductivity. More specifically, in order to apply laser marking at a low output, the thermal conductivity of the reflection film is preferably as low as possible, however, the Al-alloys of JIS6061 series are too high in thermal conductivity. Therefore, in the case of applying laser marking with the use of the Al-alloys of JIS6061 series, in the present state, there has occurred a problem of the polycarbonate base body and the reflection film, making up the disc, undergoing thermal damage because laser output has been excessively large.
  • the Al-alloys are low in corrosion resistance. More specifically, when laser marking is applied, voids are formed after the laser marking, so that initiation of corrosion occurs to an Al-alloy film during a constant temperature and moisture test to be conducted later on.
  • JP-A No. 177639/1992 Patent document 1 relating to the field of a reflection film for an opto-magnetic recording.
  • Patent document 2 there has been disclosed a method of reducing thermal conductivity by adding at least one element selected from the group consisting of elements Si, Ti, Ta, Cr, Zr, Mo, Pd, and Pt to Al. Still further, in JP-A No.
  • Patent document 3 there has been disclosed an alloy film obtained by adding W, or Y to Al.
  • those reflection films are not developed on the premise that melting as well as removal of a film is implemented by emitting a laser beam thereto, there are some which can attain reduction in thermal conductivity, but, at the same time, rises in melting temperature while there are others which do not take into account a problem of the corrosion due to the voids, occurring after the marking, as described above.
  • none meeting requirements as the Al-alloy for use in laser marking has been provided as yet.
  • the Al-alloy capable of coping with laser marking needs to have low thermal conductivity, low melting temperature, and high corrosion resistance.
  • the Al-alloys of JIS6061 series for use as a reflection film of an optical disc for reproducing only are high in thermal conductivity, and low in corrosion resistance, and have difficulty in coping with laser marking applications in respect of these points.
  • the Al-alloy reflection films (as disclosed in Patent documents 1 to 3) so far proposed have difficulty in coping with the laser marking applications as described above.
  • the present invention has been developed by focusing attention on those circumstances, and it is therefore an object of the invention to provide an aluminum-alloy reflection film for optical information-recording, having low thermal conductivity, low melting temperature, and high corrosion resistance, and capable of coping with laser marking, an optical information-recording medium provided with the aluminum-alloy reflection film, and an aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film.
  • a thin film of an aluminum alloy obtained by causing specific amounts of specific alloying elements to be contained in aluminum has low thermal conductivity, low melting temperature, and high corrosion resistance, and as such, is a reflection thin film layer (metallic thin film layer) suitable for use as a reflection film for optical information-recording, capable of coping with laser marking.
  • the present invention has been developed on the basis of such knowledge, and the object described as above can be achieved by the present invention.
  • the present invention that has achieved the object described upon completion as above is concerned with an aluminum-alloy reflection film for optical information-recording, an optical information-recording medium, and an aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording.
  • the aluminum-alloy reflection film for optical information-recording (the aluminum-alloy reflection film according to first to fifth inventions)
  • the present invention in its second aspect provides the optical information-recording medium (the optical information-recording medium according to sixth to seventh inventions), further providing in its third aspect the aluminum-alloy sputtering target for formation of an aluminum-alloy reflection film for optical information-recording (the sputtering target according to eighth to eleventh inventions).
  • Those have the following makeup, respectively.
  • the aluminum-alloy reflection film for optical information-recording is an aluminum-alloy reflection film for optical information-recording, serving as an aluminum-alloy reflection film for use in an optical information-recording medium, said aluminum-alloy reflection film for optical information-recording, containing:
  • the rare earth elements may be elements Nd and/or Y (the second invention).
  • any of the aluminum-alloy reflection films for optical information-recording may contain 1.0 to 5.0 at. % of at least one element selected from the group consisting of elements Fe, and Co (the third invention).
  • any of the aluminum-alloy reflection films for optical information-recording may contain 1.0 to 10.0 at. % of at least one element selected from the group consisting of elements In, Zn, Ge, Cu, and Li (the fourth invention).
  • any of the aluminum-alloy reflection films for optical information-recording may contain not more than 5.0 at. % of at least one element selected from the group consisting of elements Si, and Mg (the fifth invention).
  • the optical information-recording medium according to the second aspect of the present invention comprises any of the aluminum-alloy reflection films described as above (the sixth invention).
  • optical information-recording medium described as above may be suitable for use in laser marking (the seventh invention).
  • the aluminum-alloy sputtering target for formation of an aluminum-alloy reflection film for optical information-recording containing:
  • the aluminum-alloy sputtering target for formation of an aluminum-alloy reflection film for optical information-recording may contain 1.0 to 5.0 at. % of at least one element selected from the group consisting of elements Fe, and Co (the ninth invention).
  • any of the aluminum-alloy sputtering targets for formation of an aluminum-alloy reflection film for optical information-recording may contain 1.0 to 10.0 at. % of at least one element selected from the group consisting of elements In, Zn, Ge, Cu, and Li (the tenth invention).
  • any of the aluminum-alloy sputtering targets for formation of an aluminum-alloy reflection film for optical information-recording, described as above, may contain not more than 5.0 at. % of at least one element selected from the group consisting of elements Si, and Mg (the eleventh invention).
  • the aluminum-alloy reflection film for optical information-recording according to the present invention can have low thermal conductivity, low melting temperature, and high corrosion resistance, and can be suitably used as a reflection film for optical information-recording, capable of coping with laser marking.
  • the optical information-recording medium according to the present invention comprises the aluminum-alloy reflection film described, and laser marking can be suitably applied thereto.
  • the aluminum-alloy sputtering target for formation of an aluminum-alloy reflection film for optical information-recording, according to the present invention can form the aluminum-alloy reflection film described.
  • FIG. 1 is a schematic sectional view showing a construction of an optical disc for reproducing only.
  • An aluminum-alloy thin-film suitable for laser marking needs to have low thermal conductivity, low melting temperature, and high corrosion resistance.
  • the inventor, et al. have produced aluminum-alloy sputtering targets obtained by adding a variety of elements to aluminum, respectively, and have fabricated aluminum-alloy thin-films of various compositions by a sputtering method using those sputtering targets, thereby having examined the composition thereof, and properties thereof, as a reflection thin film layer, whereupon the following facts ⁇ items (1) to (5) as given below ⁇ have been found out:
  • thermal conductivity can be significantly reduced without causing a rise in melting temperature (liquid phase line temperature). If an addition amount of the one element is less than 1.0 at. %, the effect of reduction in thermal conductivity decreases. If the addition amount of the one element exceeds 10.0 at. %, deterioration in reflectance increases.
  • the group of the rare earth elements Nd and Y have greater effect of reduction in thermal conductivity, respectively. Further, as for corrosion resistance, an advantageous effect obtained by addition of the above-described rare earth elements only is insufficient.
  • an addition amount thereof is limited, and needs to be not more than 5.0 at. %, preferably not more than 3.0 at. %. If the addition amount of those elements (Cr to Nb, Ni) is less than 0.5 at. %, the effect of improvement in corrosion resistance decreases. Hence, the addition amount is preferably 1.0 at. % or more.
  • those elements (Cr to Nb, Ni), Cr, Ta, Ti, and Hf are preferably selected in the effect of a marked improvement in corrosion resistance.
  • the effect of reduction in thermal conductivity decreases, and in order to sufficiently exhibit the effect of reduction in thermal conductivity, not less than 1.0 at. % of those elements (Fe, Co) are preferably added thereto. Because of an increase in deterioration of reflectance if those elements (Fe, Co) are excessively added, and because of ease with which a sputtering target is produced, the addition amount of those elements (Fe, Co) is preferably set to not more than 5.0 at. %.
  • an addition amount of those elements ⁇ In, Zn, Ge, Cu, and Li (hereinafter referred to also as (In to Li)) is less than 1.0 at. %, the effect of reduction in thermal conductivity, and the effect of reduction in melting temperature decrease, and in order to sufficiently exhibit the effect of reduction in thermal conductivity, and the effect of reduction in melting temperature, not less than 1.0 at. % of those elements (In to Li) are preferably added. Because of an increase in deterioration of reflectance if those elements (In to Li) are excessively added, the addition amount of those elements (In to Li) is preferably set to not more than 10.0 at. %.
  • an addition amount of those elements (Si, Mg) is preferably set to not more than 5.0 at. %.
  • the invention has been developed based on the knowledge described as above, and intends to provide an aluminum-alloy reflection film of the above-described composition, for optical information-recording, an optical information-recording medium, and an aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording.
  • An embodiment of an aluminum-alloy reflection film for optical information-recording according to the invention, completed as described above, is an aluminum-alloy reflection film for use in the optical information-recording medium, and is an aluminum-alloy reflection film for optical information-recording, containing Al as the main constituent, and 1.0 to 10.0 at. % of at least one element selected from the group of rare earth elements, further containing 0.5 to 5.0 at. % of at least one element selected from the group consisting of elements Cr to Nb, Ni (Cr, Ta, Ti, Mo, V, W, Zr, Hf, Nb, and Ni) (a first invention).
  • the thermal conductivity thereof can be significantly reduced without causing a rise in the melting temperature (liquid phase line temperature) thereof, and by further adding 0.5 to 5.0 at. % of at least the one element selected from the group consisting of elements Cr to Nb, Ni, the corrosion resistance can be significantly improved, and the thermal conductivity thereof can be further reduced.
  • the aluminum-alloy reflection film for optical information-recording according to the invention can have low thermal conductivity, low melting temperature, and high corrosion resistance, and is capable of excellently coping with laser marking, so that the same can be used suitably as a reflection film for optical information recording. That is, since the melting temperature is low, the laser marking can be easily applied, and since the thermal conductivity is low, it need only be sufficient to have low laser output (with no need for excessively increasing laser output), thereby precluding a possibility of thermal damage otherwise occurring to disc components (a polycarbonate sheet and an adhesion layer) due to excessive laser output.
  • the thermal conductivity can be more significantly reduced as is evident from the item (1) as above (a second invention).
  • the thermal conductivity can be further significantly reduced as is evident from the item (3) as above (a third invention).
  • the melting temperature can be reduced and the thermal conductivity can be still further reduced as is evident from the item (4) as above (a fourth invention).
  • the melting temperature can be reduced as is evident from the item (5) as above (a fifth invention). Further, among those elements (Si, Mg), Si also has the effect of improvement in the corrosion resistance.
  • the aluminum-alloy reflection film for optical information-recording is preferably formed to a thickness in a range of 30 to 200 nm.
  • the reason for this is because although it is considered that the smaller the film thickness thereof, the easier the laser marking can be applied, if the film thickness thereof is as small as less than 30 nm, light is transmitted therethrough, resulting in deterioration of reflectance while surface flatness of the film deteriorates as the film thickness increases, thereby causing light to become prone to scattering, and with the film thickness in excess of 200 nm, the aluminum-alloy reflection film for optical information becomes susceptible to scattering of light. From the viewpoint of checking the deterioration of reflectance, and the scattering of light, the film thickness is more preferably set to fall in a range of 40 to 100 nm.
  • An embodiment of an optical information-recording medium comprises the above-described aluminum-alloy reflection film for optical information-recording according to the invention (a sixth invention).
  • the laser marking can be suitably applied to the optical information-recording medium. Accordingly, it is possible to prevent thermal damage otherwise occurring to the disc components (the polycarbonate sheet and the adhesion layer) due to excessive laser output. Furthermore, since the aluminum-alloy reflection film is excellent in the corrosion resistance, the same is insusceptible to initiation of corrosion during the constant temperature-and-moisture test conducted after the laser marking (corrosion otherwise occurring to the aluminum-alloy reflection film, due to moisture intruding into voids formed after the laser marking). In these respects, the optical information-recording medium can have excellent properties.
  • optical information-recording medium according to the invention can have the excellent properties as described above, and the same can be particularly suitably used in laser marking (a seventh invention).
  • An embodiment of an aluminum-alloy sputtering target is an aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording, containing Al as the main constituent, and 1.0 to 10.0 at. % of at least the one element selected from the group of rare earth elements while containing 0.5 to 5.0 at. % of at least the one element selected from the group consisting of elements Cr to Nb, Ni (Cr, Ta, Ti, Mo, V, W, Zr, Hf, Nb, and Ni) (an eighth invention).
  • the aluminum-alloy reflection film for optical information-recording according to the first invention can be formed.
  • the aluminum-alloy sputtering target according to the invention, further contains 1.0 to 5.0 at. % of at least the one element selected from the group consisting of elements Fe, and Co, the aluminum-alloy reflection film for optical information-recording according to the third invention can be formed (a ninth invention).
  • the aluminum-alloy sputtering target still further contains 1.0 to 10.0 at. % of at least the one element selected from the group consisting of elements In to Li (In, Zn, Ge, Cu, and Li), the aluminum-alloy reflection film for optical information-recording according to the fourth invention can be formed (a tenth invention).
  • the aluminum-alloy sputtering target according to the invention, yet further contains not more than 5.0 at. % of at least the one element selected from the group consisting of elements Si, and Mg, the aluminum-alloy reflection film for optical information-recording according to the fifth invention can be formed (an eleventh invention).
  • An Al—Nd (an Al alloy containing Nd) thin film, and an Al—Y (an Al alloy containing Y) thin film were fabricated, having examined relationships of respective addition amounts (respective contents) of Nd, Y, with the melting temperature, thermal conductivity, reflectance of the respective thin films, and BCA (Burst Cutting Area) marking property, respectively.
  • the thin films were fabricated as follows. More specifically, the Al—Nd thin film, or the Al—Y thin film was fabricated (formed) on a glass substrate (Corning #1737, substrate size; 50 mm in diameter, 1 mm in thickness) by DC magnetron sputtering. At this point in time, there were adopted film forming conditions of substrate temperature: 22° C., Ar gas pressure: 2 mTorr, film forming rate: 2 mm/sec, and back pressure: ⁇ 5 ⁇ 10 ⁇ 6 Torr. For a sputtering target, use was made of an aluminum-alloy sputtering target of the same composition as that for the Al alloy thin film that is to be obtained.
  • the respective melting temperatures of the thin films were measured in the following manner. About 5 mg of the respective aluminum-alloy thin films (the Al—Nd thin film, and the Al—Y thin film) formed to a thickness 1 ⁇ m were collected after being stripped from the substrate to be measured with a differential thermometer. In this case, the mean value of temperature at the time of the close of film melting in increasing temperature, and temperature at the time of the start of film solidification in decreasing temperature was taken as melting temperature. The thermal conductivity was obtained by conversion from electrical resistivity of the respective aluminum-alloy thin films formed to a thickness 100 nm. The reflectance was found by measuring reflectance of the respective films 100 nm thick at the laser wave length 650 nm and 405 nm as currently adopted in the case of DVD.
  • those with the effective aperture ratio at not less than 95% is designated as a double circle, those with the effective aperture ratio in a range of 80 to 95% as a circle, those with the effective aperture ratio in a range of 50 to 80% as a triangle, and those with the effective aperture ratio less than 50% as a cross (x).
  • an aluminum-alloy thin film of a composition equivalent to that for a JIS6061 material was fabricated (formed) by the same method as described above.
  • a sputtering target in this case use was made of an aluminum-alloy sputtering target fabricated out of the JIS6061 material.
  • the aluminum-alloy sputtering target had a composition of Si; 0.75 wt. % (mass %), Fe: 0.10 wt. %. Cu: 0.41 wt. %, Mn: 0.07 wt. %. Mg: 1.10 wt. %, Cr: 0.12 wt. %, and the balance being composed of Al and intrinsic impurities.
  • An aluminum-alloy thin film as fabricated had the same composition as that of the aluminum-alloy sputtering target described above.
  • results of the measurements (examinations) as described are shown in Table 1.
  • an Nd-amount, and a Y-amount of Al—Nd alloy and Al—Y alloy, respectively, refer to values expressed in at. % (atomic %). That is, Al-x.Nd refers to an Al alloy (Al—Nd alloy) thin film containing x at. % of Nd while Al-x.Y refers to an Al alloy (Al—Y alloy) thin film containing x at. % of Y.
  • Al-1.0Nd refers to an Al alloy containing 1.0 at. % of Nd.
  • thermal conductivity significantly deteriorates with an increase in the Nd-amount, and the Y-amount, respectively.
  • melting temperature hardly changes even with an increase in the Nd-amount, and the Y-amount, respectively.
  • reflectance is found gradually deteriorating with an increase in the Nd-amount, and the Y-amount, respectively.
  • Thermal conductivity is found at a sufficiently good value (low value) when the Nd-amount, and the Y-amount are at not less than 1.0 at. %, respectively, and is at a higher-level good value when the Nd-amount, and the Y-amount are at not less than 2.0 at. %, respectively.
  • Reflectance is found at a sufficiently good value (high value) when the Nd-amount, and the Y-amount are at not more than 10.0 at. %, respectively, provided, however, that the magnitude of deterioration in reflectance when the Nd-amount, and the Y-amount exceed 7 at. %, in the described range, respectively, is greater than that when the Nd-amount, and the Y-amount are at not more than 7 at. %, respectively,
  • Nd, and Y need to be in a range of 1.0 to 10.0 at. %, and are more preferably in a range of 2.0 to 7 at. %.
  • An Al-4.0Nd—(Ta, Cr, Ti) thin film (a thin film made of an Al alloy containing 4.0 at. % of Nd, together with at least one element selected from the group consisting of elements Ta, Cr, and Ti) was fabricated, having examined relationships of respective addition amounts of Ta, Cr, and Ti, with the melting temperature, thermal conductivity, reflectance, corrosion resistance of the thin film, and BCA marking property, respectively.
  • the thin film was fabricated as follows. More specifically, the Al-4.0Nd—(Ta, Cr, Ti) alloy thin film was fabricated (formed) on a glass substrate (Corning #1737, substrate size; 50 mm in diameter, 1 mm in thickness) by DC magnetron sputtering. At this point in time, there were adopted film forming conditions of substrate temperature: 22° C., Ar gas pressure: 2 mTorr, film forming rate: 2 mm/sec, and back pressure: ⁇ 5 ⁇ 10 ⁇ 6 Torr. For a sputtering target, use was made of an aluminum-alloy sputtering target of the same composition as that for the Al alloy thin film that is to be obtained.
  • the melting temperature of the thin film was measured in the following manner. About 5 mg of the aluminum-alloy thin film ⁇ the Al-4.0Nd—(Ta, Cr, Ti) alloy thin film ⁇ formed to a thickness 1 ⁇ m were collected after being stripped from the substrate to be measured with a differential thermometer. In this case, the mean value of temperature at the time of the close of film melting in increasing temperature, and temperature at the time of the start of film solidification in decreasing temperature was taken as melting temperature. The thermal conductivity thereof was obtained by conversion from electrical resistivity of the aluminum-alloy thin film formed to a thickness 100 nm. The reflectance was found by measuring reflectance of the respective films 100 nm thick at the laser wave length 650 nm and 405 nm as currently adopted in the case of DVD.
  • those with the effective aperture ratio at not less than 95% is designated as a double circle, those with the effective aperture ratio in a range of 80 to 95% as a circle, those with the effective aperture ratio in a range of 50 to 80% as a triangle, and those with the effective aperture ratio less than 50% as a cross (x).
  • the aluminum-alloy thin film was immersed in a solution of 5% NaCl at 35° C. to thereby measure anodic polarization, from which a pitting initiation potential (a potential corresponding to current density at 10 ⁇ A/cm 2 ) was found to be used as an index for corrosion resistance.
  • the potential described is a potential relative to the saturated calomel electrode (SCE), that is, a potential vs. SCE (the same applies hereinafter).
  • an Nd-amount, a Ta amount, a Cr amount, and a Ti amount of Al-4Nd—(Ta, Cr, Ti) refer to values expressed in at. % (atomic %), respectively. That is, Al-4Nd—Y.Ta (or Cr, Ti) refers to an Al alloy ⁇ Al—Nd—(Ta, Cr, Ti) alloy ⁇ thin film containing 4.0 at. % Nd, together with Y at. % of Ta (or Cr, Ti).
  • Al-4Nd-1.0Ta refers to an Al alloy containing 4.0 at. % of Nd, together with 1.0 at. % of Ta.
  • Corrosion resistance is found at a sufficiently good value (high value) when the Ta amount, Cr amount, and Ti amount are at not less than 0.5 at. %, respectively, and is found at a higher-level good value when those amounts are at not less than 2.0 at. %, respectively.
  • Reflectance is found at a sufficiently good value (high value) when the Ta amount, Cr amount, and Ti amount are at not more than 5.0 at. %, respectively, and is at a higher-level good value when those amounts are at not more than 4.0 at. %, respectively.
  • Melting temperature is found at a sufficiently good value (low value) when the Ta amount, Cr amount, and Ti amount are at not more than 5.0 at. %, respectively, and is at a higher-level good value when those amounts are at not more than 4.0 at. %, respectively.
  • the respective addition amounts (contents) of the Ta amount, Cr amount, and Ti amount need to be in a range of 0.5 to 5.0 at. %, and are more preferably in a range of 2.0 to 4.0 at. %.
  • An Al-4.0Nd- ⁇ Mo, V, W, Zr, Hf, Nb, and Ni (hereinafter referred to also as (Mo to Nb, Ni)) thin film (a thin film made of an Al alloy containing 4.0 at. % of Nd, together with at least one element selected from the group consisting of elements Mo to Nb, Ni) was fabricated, having examined relationships of respective addition amounts of Mo to Nb, Ni, with the melting temperature, thermal conductivity, reflectance, corrosion resistance of the thin film, and BCA marking property, respectively.
  • the thin film was fabricated as follows. More specifically, the Al-4.0Nd—(Mo to Nb, Ni) alloy thin film was fabricated (formed) on a glass substrate (Corning #1737, substrate size; 50 mm in diameter, 1 mm in thickness) by DC magnetron sputtering. At this point in time, there were adopted film forming conditions of substrate temperature: 22° C., Ar gas pressure: 2 mTorr, film forming rate: 2 mm/sec, and back pressure: ⁇ 5 ⁇ 10 ⁇ 6 Torr. For a sputtering target, use was made of an aluminum-alloy sputtering target of the same composition as that for the Al alloy thin film that is to be obtained.
  • the melting temperature of the thin film was measured in the following manner. About 5 mg of the aluminum-alloy thin film ⁇ the Al-4.0Nd—(Mo to Nb, Ni) alloy thin film ⁇ formed to a thickness 1 ⁇ m were collected after being stripped from the substrate to be measured with a differential thermometer. In this case, the mean value of temperature at the time of the close of film melting in increasing temperature, and temperature at the time of the start of film solidification in decreasing temperature was taken as melting temperature. The thermal conductivity thereof was obtained by conversion from electrical resistivity of the aluminum-alloy thin film formed to a thickness 100 nm.
  • the reflectance was found by measuring reflectance of the respective films 100 nm thick at the laser wave length 650 nm and 405 nm as currently adopted in the case of DVD. Tests on BCA marking property were conducted using a PC (polycarbonate) base plate 0.6 mm thick as a substrate to fabricate an Al-alloy thin film 70 nm thick although the same film forming conditions as those described above were adopted. At the tests, the thin film was irradiated with laser light (laser marking) under a laser condition of laser wavelength: 810 nm, linear velocity: 4 m/sec, and laser power: 1.5W to thereby evaluate the characteristics on the basis of an effective aperture ratio of portions of the thin film, subjected to the laser marking.
  • laser light laser marking
  • a BCA code recorder POP120-8R for DVD-ROM manufactured by Hitachi Computer Equipment.
  • those with the effective aperture ratio at not less than 95% is designated as a double circle, those with the effective aperture ratio in a range of 80 to 95% as a circle, those with the effective aperture ratio in a range of 50 to 80% as a triangle, and those with the effective aperture ratio less than 50% as a cross (x).
  • the aluminum-alloy thin film was immersed in a solution of 5% NaCl at 35° C. to thereby measure anodic polarization, from which a pitting initiation potential (the potential corresponding to current density at 10 ⁇ A/cm 2 ) was found to be used as an index for corrosion resistance.
  • Corrosion resistance is found at a sufficiently good value (high value) when the respective addition amounts (contents) of Mo to Nb, Ni are at not less than 0.5 at. %, and is at a higher-level good value when the respective addition amounts are at not less than 2.0 at. %.
  • Reflectance is found at a sufficiently good value (high value) when the respective addition amounts of Mo to Nb, Ni are at not more than 5.0 at. %, and is at a higher-level good value when the respective addition amounts are at not more than 4.0 at. %.
  • Melting temperature is found at a sufficiently good value (low value) when the respective addition amounts of Mo to Nb, Ni are at not more than 5.0 at. %, respectively, and is at a higher-level good value when the respective addition amounts are at not more than 4.0 at. %.
  • An Al-4.0Nd—(Fe, Co) thin film (a thin film made of an Al alloy containing 4.0 at. % of Nd, together with Fe or Co) and an Al-4.0Nd-1Ta—(Fe, Co) thin film (a thin film made of an Al alloy containing 4.0 at. % of Nd, and 1.0 at. % of Ta, together with Fe or Co) were fabricated, having examined relationships of respective addition amounts of Fe and Co, with the melting temperature, thermal conductivity, reflectance, corrosion resistance, and BCA marking property of the respective thin films, respectively.
  • the thin films were fabricated as follows. More specifically, the Al-4.0Nd—(Fe, Co) alloy thin film, the Al-4.0Nd-1Ta—(Fe, Co) alloy thin film, and so forth, were fabricated (formed) on a glass substrate (Corning #1737, substrate size; 50 mm in diameter, 1 mm in thickness) by DC magnetron sputtering. At this point in time, there were adopted film forming conditions of substrate temperature: 22° C., Ar gas pressure: 2 mTorr, film forming rate: 2 mm/sec, and back pressure: ⁇ 5 ⁇ 10 ⁇ 6 Torr. For a sputtering target, use was made of an aluminum-alloy sputtering target of the same composition as those for the Al alloy thin films that are to be obtained, respectively.
  • the respective melting temperatures of the thin films were measured in the following manner. About 5 mg of the Al-4.0Nd—(Fe, Co) alloy thin film, the Al-4.0Nd-1Ta—(Fe, Co) alloy thin film, and so forth, formed to a thickness 1 ⁇ m, were collected after being stripped from the substrate to be measured with a differential thermometer. In this case, the mean value of temperature at the time of the close of film melting in increasing temperature, and temperature at the time of the start of film solidification in decreasing temperature was taken as melting temperature. The thermal conductivity thereof was obtained by conversion from electrical resistivity of the aluminum-alloy thin film formed to a thickness 100 nm.
  • the reflectance was found by measuring reflectance of the respective films 100 nm thick at the laser wave length 650 nm and 405 nm as currently adopted in the case of DVD. Tests on BCA marking property were conducted using a PC (polycarbonate) base plate 0.6 mm thick as a substrate to fabricate an Al-alloy thin film 70 nm thick although the same film forming conditions as those described above were adopted. At the tests, the thin film was irradiated with laser light (laser marking) under a laser condition of laser wavelength: 810 nm, linear velocity: 4 m/sec, and laser power: 1.5W to thereby evaluate the characteristics on the basis of an effective aperture ratio of portions of the thin film, subjected to the laser marking.
  • laser light laser marking
  • Al-4Nd—Z.Fe (or Co) refers to an Al alloy ⁇ Al—Nd—Ta—(Fe, Co) alloy ⁇ thin film containing 4.0 at. % Nd, together with Z at. % of Fe (or Co).
  • Al-4Nd-1Ta-3.0Fe refers to an Al alloy containing 4.0 at. % of Nd, and 1.0 at. % of Ta, together with 3.0 at. % of Fe.
  • the respective addition amounts of Fe, and Co are less than 1.0 at. %, the effect of reduction in thermal conductivity is small. If the respective addition amounts of Fe, and Co exceed 5.0 at. %, there is an increase in deterioration of reflectance. Based on those results, it is evident that the respective addition amounts of Fe and Co are preferably in a range of 1.0 to 5.0 at. %.
  • An Al-4.0Nd- ⁇ In—Li(In, Zn, Ge, Cu, Li) ⁇ thin film (a thin film made of an Al alloy containing 4.0 at. % of Nd, together with at least one element selected from the group consisting of elements In—Li), and an Al-4.0Nd-1Ta— ⁇ In—Li(In, Zn, Ge, Cu, Li) ⁇ thin film (a thin film made of an Al alloy containing 4.0 at. % of Nd, and 1.0% of Ta, together with at least one element selected from the group consisting of elements In—Li), were fabricated, having examined relationships of respective addition amounts of In to Ni, with the melting temperature, thermal conductivity, reflectance, of the respective thin films, corrosion resistance, and BCA marking property, respectively.
  • the thin films were fabricated as follows. More specifically, the Al-4.0Nd—(In—Li) thin film, the Al-4.0Nd-1Ta—(In—Li) thin film, and so forth, were fabricated (formed) on a glass substrate (Corning #1737, substrate size; 50 mm in diameter, 1 mm in thickness) by DC magnetron sputtering. At this point in time, there were adopted film forming conditions of substrate temperature: 22° C., Ar gas pressure: 2 mTorr, film forming rate: 2 mm/sec, and back pressure: ⁇ 5 ⁇ 10 ⁇ 6 Torr. For a sputtering target, use was made of an aluminum-alloy sputtering target of the same composition as those for the Al alloy thin films that are to be obtained, respectively.
  • the melting temperature of the thin films was measured in the following manner. About 5 mg of the aluminum-alloy thin films ⁇ the Al-4.0Nd—(In—Li) thin film, the Al-4.0Nd-1Ta—(In—Li) thin film, and so forth ⁇ , formed to a thickness 1 ⁇ m, were collected after being stripped from the substrate too be measured with a differential thermometer. In this case, the mean value of temperature at the time of the close of film melting in increasing temperature, and temperature at the time of the start of film solidification in decreasing temperature was taken as melting temperature. The thermal conductivity thereof was obtained by conversion from electrical resistivity of the aluminum-alloy thin films formed to a thickness 100 nm.
  • the reflectance was found by measuring reflectance of the respective films 100 nm thick at the laser wave length 650 nm and 405 nm as currently adopted in the case of DVD. Tests on BCA marking property were conducted using a PC (polycarbonate) base plate 0.6 mm thick as a substrate to fabricate an Al-alloy thin film 70 nm thick although the same film forming conditions as those described above were adopted. At the tests, the thin film was irradiated with laser light (laser marking) under a laser condition of laser wavelength: 810 nm, linear velocity: 4 m/sec, and laser power: 1.5W to thereby evaluate the characteristics on the basis of an effective aperture ratio of portions of the thin film, subjected to the laser marking.
  • laser light laser marking
  • a BCA code recorder POP120-8R for DVD-ROM manufactured by Hitachi Computer Equipment.
  • those with the effective aperture ratio at not less than 95% is designated as a double circle, those with the effective aperture ratio in a range of 80 to 95% as a circle, those with the effective aperture ratio in a range of 50 to 80% as a triangle, and those with the effective aperture ratio less than 50% as a cross (x).
  • the aluminum-alloy thin films were immersed in a solution of 5% NaCl at 35° C. to thereby measure anodic polarization, from which respective pitting initiation potentials (the respective potentials corresponding to current density at 10 ⁇ A/cm 2 ) were found to be used as indexes for corrosion resistance.
  • Al-4.0Nd-1Ta—Z In (or one element selected from the group consisting of elements Zn, Ge, Cu, and Li) refers to an Al alloy ⁇ Al—Nd—Ta—(In—Li) alloy ⁇ thin film containing 4.0 at. % of Nd, and 1.0 at. % of Ta, together with Z at. % of In (or one element selected from the group consisting of elements Zn, Ge, Cu, and Li).
  • Al-4.0Nd-1Ta-3.0In refers to an Al alloy containing 4.0 at. % of Nd, and 1.0 at. % of Ta, together with 3.0 at. % of In.
  • any of In—Li (In, Zn, Ge, Cu, and Li) has the effect of reduction in melting temperature as well as thermal conductivity.
  • In—Li, In and Ge in particular, have the effect of large reduction in thermal conductivity, and from this point of view, addition of In, Ge is preferable.
  • In—Li have no effect of causing enhancement in corrosion resistance.
  • An Al-4.0Nd-2.0Ta—(Si, Mg) thin film (a thin film made of an Al alloy containing 4.0 at. % of Nd, and 2.0 at. % of Ta, together with at least one element selected from the group consisting of elements Si, and Mg) was fabricated, having examined relationships of respective addition amounts of Si, and Mg, with the melting temperature, thermal conductivity, reflectance, corrosion resistance, and BCA marking property of the thin film, respectively.
  • the thin film was fabricated as follows. More specifically, the Al-4.0Nd-2.0Ta—(Si, Mg) alloy thin film was fabricated (formed) on a glass substrate (Corning #1737, substrate size; 50 mm in diameter, 1 mm in thickness) by DC magnetron sputtering. At this point in time, there were adopted film forming conditions of substrate temperature: 22° C., Ar gas pressure: 2 mTorr, film forming rate: 2 mm/sec, and back pressure: ⁇ 5 ⁇ 10 ⁇ 6 Torr. For a sputtering target, use was made of an aluminum-alloy sputtering target of the same composition as that for the Al alloy thin film that is to be obtained.
  • the melting temperature of the thin film was measured in the following manner. About 5 mg of the Al-4.0Nd-2.0Ta—(Si, Mg) alloy thin film, formed to a thickness 1 ⁇ m, was collected after being stripped from the substrate to be measured with a differential thermometer. In this case, the mean value of temperature at the time of the close of film melting in increasing temperature, and temperature at the time of the start of film solidification in decreasing temperature was taken as melting temperature. The thermal conductivity thereof was obtained by conversion from electrical resistivity of the aluminum-alloy thin film formed to a thickness 100 nm. The reflectance was found by measuring reflectance of the respective films 100 nm thick at the laser wave length 650 nm and 405 nm as currently adopted in the case of DVD.
  • those with the effective aperture ratio at not less than 95% is designated as a double circle, those with the effective aperture ratio in a range of 80 to 95% as a circle, those with the effective aperture ratio in a range of 50 to 80% as a triangle, and those with the effective aperture ratio less than 50% as a cross (x).
  • the aluminum-alloy thin film was immersed in a solution of 5% NaCl at 35° C. to thereby measure anodic polarization, from which a pitting initiation potential (the potential corresponding to current density at 10 ⁇ A/cm 2 ) was found to be used as an index for corrosion resistance.
  • Al-4Nd-2.0Ta—Z.Si refers to an Al alloy ⁇ Al—Nd—Ta—(Si, Mg) alloy ⁇ thin film containing 4.0 at. % of Nd, and 2.0 at. % of Ta, together with Z at. % of Si (or Mg).
  • Al-4Nd-2.0Ta-5.0Si refers to an Al alloy containing 4.0 at. % of Nd, and 2.0 at. % of Ta, together with 5.0 at. % of Si.
  • Nd or Y has been added as the rare earth element, however, even in the case of adding rare earth elements other than Nd, and Y, there can be obtained results of a tendency similar to that for the case of the working examples described as above. Further, with the case of the above-described working examples, any one element of the rare earth element has been added (single addition), and further, any one element selected from the group consisting of elements Cr to Nb, Ni (Cr, Ta, Ti, Mo, V, W, Zr, Hf, Nb, and Ni) has been added (single addition).
  • the aluminum-alloy reflection film for optical information-recording according to the invention has low thermal conductivity, low melting temperature, and high corrosion resistance, the same can be suitably used for a reflection film for optical information-recording, requiring those properties described, particularly for a reflection film for optical information-recording, capable of coping with laser marking.

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