TWI899176B - 遮罩基底、轉印用遮罩、及半導體元件之製造方法 - Google Patents

遮罩基底、轉印用遮罩、及半導體元件之製造方法

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Publication number
TWI899176B
TWI899176B TW110108826A TW110108826A TWI899176B TW I899176 B TWI899176 B TW I899176B TW 110108826 A TW110108826 A TW 110108826A TW 110108826 A TW110108826 A TW 110108826A TW I899176 B TWI899176 B TW I899176B
Authority
TW
Taiwan
Prior art keywords
film
light
mask
substrate
wavelength
Prior art date
Application number
TW110108826A
Other languages
English (en)
Chinese (zh)
Other versions
TW202201117A (zh
Inventor
野澤順
穐山圭司
達霖 許
惠君 譚
Original Assignee
日商Ｈｏｙａ股份有限公司
新加坡商Ｈｏｙａ電子新加坡私人股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｈｏｙａ股份有限公司, 新加坡商Ｈｏｙａ電子新加坡私人股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202201117A publication Critical patent/TW202201117A/zh
Application granted granted Critical
Publication of TWI899176B publication Critical patent/TWI899176B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW110108826A 2020-03-19 2021-03-12 遮罩基底、轉印用遮罩、及半導體元件之製造方法 TWI899176B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-049162 2020-03-19
JP2020049162A JP7354032B2 (ja) 2020-03-19 2020-03-19 マスクブランク、転写用マスク、及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
TW202201117A TW202201117A (zh) 2022-01-01
TWI899176B true TWI899176B (zh) 2025-10-01

Family

ID=77771232

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110108826A TWI899176B (zh) 2020-03-19 2021-03-12 遮罩基底、轉印用遮罩、及半導體元件之製造方法

Country Status (6)

Country Link
US (1) US20230097280A1 (enExample)
JP (1) JP7354032B2 (enExample)
KR (1) KR20220156818A (enExample)
CN (1) CN115280236B (enExample)
TW (1) TWI899176B (enExample)
WO (1) WO2021187189A1 (enExample)

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US12210279B2 (en) * 2021-05-27 2025-01-28 AGC Inc. Electroconductive-film-coated substrate and reflective mask blank
JP7375065B2 (ja) * 2022-02-24 2023-11-07 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び表示装置の製造方法
KR102587396B1 (ko) * 2022-08-18 2023-10-10 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

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TW201015207A (en) * 2008-08-15 2010-04-16 Shinetsu Chemical Co Gray-tone mask substrate, gray-tone mask, and formation method of product fabrication mark or product information mark
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US20170219920A1 (en) * 2014-08-13 2017-08-03 Carl Zeiss Smt Gmbh Mask for EUV Lithography, EUV Lithography Apparatus and Method for Determining a Contrast Proportion Caused by DUV Radiation
TW201842397A (zh) * 2017-04-17 2018-12-01 日商Ａｇｃ股份有限公司 Euv曝光用反射型遮罩基底及反射型遮罩
JP2019003178A (ja) * 2017-06-14 2019-01-10 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

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JP2002090977A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランク、フォトマスクブランク、並びにそれらの製造装置及び製造方法
TW578034B (en) * 2001-09-28 2004-03-01 Hoya Corp Method of manufacturing a mask blank and a mask, the mask blank and the mask, and useless film removing method and apparatus
WO2004051369A1 (ja) * 2002-12-03 2004-06-17 Hoya Corporation フォトマスクブランク、及びフォトマスク
JPWO2004090635A1 (ja) * 2003-04-09 2006-07-06 Hoya株式会社 フォトマスクの製造方法及びフォトマスクブランク
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JP4587806B2 (ja) 2004-12-27 2010-11-24 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
US7632609B2 (en) * 2005-10-24 2009-12-15 Shin-Etsu Chemical Co., Ltd. Fabrication method of photomask-blank
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US9229316B2 (en) * 2012-03-28 2016-01-05 Hoya Corporation Method for producing substrate with multilayer reflective film, method for producing reflective mask blank and method for producing reflective mask
JP2014209200A (ja) 2013-03-22 2014-11-06 Hoya株式会社 マスクブランクの製造方法および転写用マスクの製造方法
JP5868905B2 (ja) * 2013-07-03 2016-02-24 信越化学工業株式会社 フォトマスクブランクの製造方法およびフォトマスクブランク
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KR102368405B1 (ko) * 2015-11-06 2022-02-28 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
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JP6400763B2 (ja) * 2017-03-16 2018-10-03 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
CN111133379B (zh) * 2017-09-21 2024-03-22 Hoya株式会社 掩模坯料、转印用掩模以及半导体器件的制造方法
JP7370943B2 (ja) * 2020-07-15 2023-10-30 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
JP7581107B2 (ja) * 2021-03-29 2024-11-12 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体装置の製造方法
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法
KR102587396B1 (ko) * 2022-08-18 2023-10-10 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201015207A (en) * 2008-08-15 2010-04-16 Shinetsu Chemical Co Gray-tone mask substrate, gray-tone mask, and formation method of product fabrication mark or product information mark
TW201426163A (zh) * 2012-07-31 2014-07-01 Hoya Corp 反射型空白罩體及其製造方法、反射型罩體之製造方法、以及半導體裝置之製造方法
US20170219920A1 (en) * 2014-08-13 2017-08-03 Carl Zeiss Smt Gmbh Mask for EUV Lithography, EUV Lithography Apparatus and Method for Determining a Contrast Proportion Caused by DUV Radiation
TW201842397A (zh) * 2017-04-17 2018-12-01 日商Ａｇｃ股份有限公司 Euv曝光用反射型遮罩基底及反射型遮罩
JP2019003178A (ja) * 2017-06-14 2019-01-10 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
JP7354032B2 (ja) 2023-10-02
JP2021148968A (ja) 2021-09-27
CN115280236A (zh) 2022-11-01
TW202201117A (zh) 2022-01-01
WO2021187189A1 (ja) 2021-09-23
KR20220156818A (ko) 2022-11-28
US20230097280A1 (en) 2023-03-30
CN115280236B (zh) 2025-07-01

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