CN115280236B - 掩模坯、转印用掩模及半导体器件的制造方法 - Google Patents

掩模坯、转印用掩模及半导体器件的制造方法 Download PDF

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Publication number
CN115280236B
CN115280236B CN202180020424.2A CN202180020424A CN115280236B CN 115280236 B CN115280236 B CN 115280236B CN 202180020424 A CN202180020424 A CN 202180020424A CN 115280236 B CN115280236 B CN 115280236B
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CN
China
Prior art keywords
film
light
light shielding
mask
region
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CN202180020424.2A
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English (en)
Chinese (zh)
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CN115280236A (zh
Inventor
野泽顺
穐山圭司
T.L.何
H.J.唐
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Hoya Corp
Hoya Electronics Singapore Pte Ltd
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Hoya Corp
Hoya Electronics Singapore Pte Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN202180020424.2A 2020-03-19 2021-03-08 掩模坯、转印用掩模及半导体器件的制造方法 Active CN115280236B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020049162A JP7354032B2 (ja) 2020-03-19 2020-03-19 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
JP2020-049162 2020-03-19
PCT/JP2021/008915 WO2021187189A1 (ja) 2020-03-19 2021-03-08 マスクブランク、転写用マスク、及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
CN115280236A CN115280236A (zh) 2022-11-01
CN115280236B true CN115280236B (zh) 2025-07-01

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CN202180020424.2A Active CN115280236B (zh) 2020-03-19 2021-03-08 掩模坯、转印用掩模及半导体器件的制造方法

Country Status (6)

Country Link
US (1) US20230097280A1 (enExample)
JP (1) JP7354032B2 (enExample)
KR (1) KR20220156818A (enExample)
CN (1) CN115280236B (enExample)
TW (1) TWI899176B (enExample)
WO (1) WO2021187189A1 (enExample)

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US12210279B2 (en) * 2021-05-27 2025-01-28 AGC Inc. Electroconductive-film-coated substrate and reflective mask blank
JP7375065B2 (ja) * 2022-02-24 2023-11-07 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び表示装置の製造方法
KR102587396B1 (ko) * 2022-08-18 2023-10-10 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

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WO2004051369A1 (ja) * 2002-12-03 2004-06-17 Hoya Corporation フォトマスクブランク、及びフォトマスク
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CN111133379B (zh) * 2017-09-21 2024-03-22 Hoya株式会社 掩模坯料、转印用掩模以及半导体器件的制造方法
JP7370943B2 (ja) * 2020-07-15 2023-10-30 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
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KR102587396B1 (ko) * 2022-08-18 2023-10-10 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

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CN109643058A (zh) * 2016-08-26 2019-04-16 Hoya株式会社 掩模坯料、转印用掩模及半导体器件的制造方法

Also Published As

Publication number Publication date
TWI899176B (zh) 2025-10-01
WO2021187189A1 (ja) 2021-09-23
US20230097280A1 (en) 2023-03-30
JP2021148968A (ja) 2021-09-27
JP7354032B2 (ja) 2023-10-02
KR20220156818A (ko) 2022-11-28
TW202201117A (zh) 2022-01-01
CN115280236A (zh) 2022-11-01

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