JP7354032B2 - マスクブランク、転写用マスク、及び半導体デバイスの製造方法 - Google Patents

マスクブランク、転写用マスク、及び半導体デバイスの製造方法 Download PDF

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JP7354032B2
JP7354032B2 JP2020049162A JP2020049162A JP7354032B2 JP 7354032 B2 JP7354032 B2 JP 7354032B2 JP 2020049162 A JP2020049162 A JP 2020049162A JP 2020049162 A JP2020049162 A JP 2020049162A JP 7354032 B2 JP7354032 B2 JP 7354032B2
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Prior art keywords
film
light
mask
thin film
shielding film
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Japanese (ja)
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JP2021148968A (ja
JP2021148968A5 (enExample
Inventor
順 野澤
圭司 穐山
シュ・ダー・リン
タン・フュイ・ジュン
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Hoya Electronics Singapore Pte Ltd
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Hoya Electronics Singapore Pte Ltd
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Priority to JP2020049162A priority Critical patent/JP7354032B2/ja
Application filed by Hoya Electronics Singapore Pte Ltd filed Critical Hoya Electronics Singapore Pte Ltd
Priority to CN202180020424.2A priority patent/CN115280236B/zh
Priority to KR1020227030750A priority patent/KR20220156818A/ko
Priority to US17/801,377 priority patent/US20230097280A1/en
Priority to PCT/JP2021/008915 priority patent/WO2021187189A1/ja
Priority to TW110108826A priority patent/TWI899176B/zh
Publication of JP2021148968A publication Critical patent/JP2021148968A/ja
Publication of JP2021148968A5 publication Critical patent/JP2021148968A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2020049162A 2020-03-19 2020-03-19 マスクブランク、転写用マスク、及び半導体デバイスの製造方法 Active JP7354032B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2020049162A JP7354032B2 (ja) 2020-03-19 2020-03-19 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
KR1020227030750A KR20220156818A (ko) 2020-03-19 2021-03-08 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법
US17/801,377 US20230097280A1 (en) 2020-03-19 2021-03-08 Mask blank, transfer mask, and method for manufacturing semiconductor device
PCT/JP2021/008915 WO2021187189A1 (ja) 2020-03-19 2021-03-08 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
CN202180020424.2A CN115280236B (zh) 2020-03-19 2021-03-08 掩模坯、转印用掩模及半导体器件的制造方法
TW110108826A TWI899176B (zh) 2020-03-19 2021-03-12 遮罩基底、轉印用遮罩、及半導體元件之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020049162A JP7354032B2 (ja) 2020-03-19 2020-03-19 マスクブランク、転写用マスク、及び半導体デバイスの製造方法

Publications (3)

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JP2021148968A JP2021148968A (ja) 2021-09-27
JP2021148968A5 JP2021148968A5 (enExample) 2022-12-07
JP7354032B2 true JP7354032B2 (ja) 2023-10-02

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JP2020049162A Active JP7354032B2 (ja) 2020-03-19 2020-03-19 マスクブランク、転写用マスク、及び半導体デバイスの製造方法

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US (1) US20230097280A1 (enExample)
JP (1) JP7354032B2 (enExample)
KR (1) KR20220156818A (enExample)
CN (1) CN115280236B (enExample)
TW (1) TWI899176B (enExample)
WO (1) WO2021187189A1 (enExample)

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US12210279B2 (en) * 2021-05-27 2025-01-28 AGC Inc. Electroconductive-film-coated substrate and reflective mask blank
JP7375065B2 (ja) * 2022-02-24 2023-11-07 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び表示装置の製造方法
KR102587396B1 (ko) * 2022-08-18 2023-10-10 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

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JP2008083194A (ja) 2006-09-26 2008-04-10 Hoya Corp フォトマスクブランク、フォトマスクブランクの製造方法、フォトマスク、フォトマスクの製造方法、フォトマスク中間体及びパターンの転写方法
JP2014209200A (ja) 2013-03-22 2014-11-06 Hoya株式会社 マスクブランクの製造方法および転写用マスクの製造方法
JP2016170320A (ja) 2015-03-13 2016-09-23 信越化学工業株式会社 マスクブランクス及びその製造方法
JP2019003178A (ja) 2017-06-14 2019-01-10 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

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US7226705B2 (en) * 2001-09-28 2007-06-05 Hoya Corporation Method of manufacturing a mask blank and a mask, the mask blank and the mask, and useless film removing method and apparatus
WO2004051369A1 (ja) * 2002-12-03 2004-06-17 Hoya Corporation フォトマスクブランク、及びフォトマスク
WO2004090635A1 (ja) * 2003-04-09 2004-10-21 Hoya Corporation フォトマスクの製造方法及びフォトマスクブランク
JP4339214B2 (ja) * 2004-09-13 2009-10-07 Ｈｏｙａ株式会社 マスクブランク用透明基板とその製造方法及びマスクブランクとその製造方法
JP4587806B2 (ja) 2004-12-27 2010-11-24 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
US7632609B2 (en) * 2005-10-24 2009-12-15 Shin-Etsu Chemical Co., Ltd. Fabrication method of photomask-blank
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US11112690B2 (en) * 2016-08-26 2021-09-07 Hoya Corporation Mask blank, transfer mask, and method for manufacturing semiconductor device
JP6400763B2 (ja) * 2017-03-16 2018-10-03 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
US11281088B2 (en) * 2017-04-17 2022-03-22 AGC Inc. Reflective mask blank for EUV exposure, and reflective mask
CN111133379B (zh) * 2017-09-21 2024-03-22 Hoya株式会社 掩模坯料、转印用掩模以及半导体器件的制造方法
JP7370943B2 (ja) * 2020-07-15 2023-10-30 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
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JP2002090977A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランク、フォトマスクブランク、並びにそれらの製造装置及び製造方法
JP2008083194A (ja) 2006-09-26 2008-04-10 Hoya Corp フォトマスクブランク、フォトマスクブランクの製造方法、フォトマスク、フォトマスクの製造方法、フォトマスク中間体及びパターンの転写方法
JP2014209200A (ja) 2013-03-22 2014-11-06 Hoya株式会社 マスクブランクの製造方法および転写用マスクの製造方法
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JP2019003178A (ja) 2017-06-14 2019-01-10 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
TWI899176B (zh) 2025-10-01
WO2021187189A1 (ja) 2021-09-23
US20230097280A1 (en) 2023-03-30
JP2021148968A (ja) 2021-09-27
KR20220156818A (ko) 2022-11-28
TW202201117A (zh) 2022-01-01
CN115280236A (zh) 2022-11-01
CN115280236B (zh) 2025-07-01

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