TWI878310B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI878310B
TWI878310B TW109121228A TW109121228A TWI878310B TW I878310 B TWI878310 B TW I878310B TW 109121228 A TW109121228 A TW 109121228A TW 109121228 A TW109121228 A TW 109121228A TW I878310 B TWI878310 B TW I878310B
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TW
Taiwan
Prior art keywords
substrate
layer
pixel
wiring
semiconductor device
Prior art date
Application number
TW109121228A
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English (en)
Chinese (zh)
Other versions
TW202118026A (zh
Inventor
宮崎俊彥
川原雄基
鈴木毅
飯島匡
Original Assignee
日商索尼半導體解決方案公司
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Publication of TW202118026A publication Critical patent/TW202118026A/zh
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Publication of TWI878310B publication Critical patent/TWI878310B/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW109121228A 2019-06-26 2020-06-22 半導體裝置 TWI878310B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-119167 2019-06-26
JP2019119167 2019-06-26

Publications (2)

Publication Number Publication Date
TW202118026A TW202118026A (zh) 2021-05-01
TWI878310B true TWI878310B (zh) 2025-04-01

Family

ID=74060403

Family Applications (2)

Application Number Title Priority Date Filing Date
TW109121228A TWI878310B (zh) 2019-06-26 2020-06-22 半導體裝置
TW113123069A TWI912803B (zh) 2019-06-26 2020-06-22 半導體裝置之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW113123069A TWI912803B (zh) 2019-06-26 2020-06-22 半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US12464841B2 (https=)
JP (1) JP7675650B2 (https=)
CN (1) CN113892181B (https=)
TW (2) TWI878310B (https=)
WO (1) WO2020262583A1 (https=)

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KR102933507B1 (ko) * 2021-02-18 2026-03-04 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2022142865A (ja) * 2021-03-17 2022-10-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
JP2022163433A (ja) * 2021-04-14 2022-10-26 株式会社ニコン 撮像素子及び撮像装置
TWI782619B (zh) * 2021-07-12 2022-11-01 力晶積成電子製造股份有限公司 堆疊半導體元件的製造方法
CN116093120A (zh) * 2021-11-04 2023-05-09 思特威(上海)电子科技股份有限公司 Cmos图像传感器及其控制方法
US20250374694A1 (en) 2022-01-26 2025-12-04 Sony Semiconductor Solutions Corporation Photodetection device
TWI825870B (zh) * 2022-02-21 2023-12-11 欣興電子股份有限公司 電子封裝結構及其製造方法
KR20230144180A (ko) * 2022-04-07 2023-10-16 삼성전자주식회사 이미지 센서
JP2023178684A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換装置の製造方法、機器、基板、基板の製造方法
US12520606B2 (en) * 2022-08-02 2026-01-06 Samsung Electronics Co., Ltd. Image sensor
CN120202741A (zh) * 2022-12-15 2025-06-24 索尼半导体解决方案公司 光检测装置和电子设备
WO2024150531A1 (ja) * 2023-01-13 2024-07-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025069737A1 (ja) * 2023-09-28 2025-04-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
JP2025060035A (ja) * 2023-09-29 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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Also Published As

Publication number Publication date
WO2020262583A1 (ja) 2020-12-30
US12464841B2 (en) 2025-11-04
JP7675650B2 (ja) 2025-05-13
TW202445852A (zh) 2024-11-16
JPWO2020262583A1 (https=) 2020-12-30
TW202118026A (zh) 2021-05-01
CN113892181B (zh) 2025-07-18
CN113892181A (zh) 2022-01-04
US20220352226A1 (en) 2022-11-03
TWI912803B (zh) 2026-01-21

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