JPWO2020262583A1 - - Google Patents
Info
- Publication number
- JPWO2020262583A1 JPWO2020262583A1 JP2021527757A JP2021527757A JPWO2020262583A1 JP WO2020262583 A1 JPWO2020262583 A1 JP WO2020262583A1 JP 2021527757 A JP2021527757 A JP 2021527757A JP 2021527757 A JP2021527757 A JP 2021527757A JP WO2020262583 A1 JPWO2020262583 A1 JP WO2020262583A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019119167 | 2019-06-26 | ||
| JP2019119167 | 2019-06-26 | ||
| PCT/JP2020/025146 WO2020262583A1 (ja) | 2019-06-26 | 2020-06-26 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2020262583A1 true JPWO2020262583A1 (https=) | 2020-12-30 |
| JP7675650B2 JP7675650B2 (ja) | 2025-05-13 |
Family
ID=74060403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021527757A Active JP7675650B2 (ja) | 2019-06-26 | 2020-06-26 | 半導体装置及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12464841B2 (https=) |
| JP (1) | JP7675650B2 (https=) |
| CN (1) | CN113892181B (https=) |
| TW (2) | TWI878310B (https=) |
| WO (1) | WO2020262583A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102933507B1 (ko) * | 2021-02-18 | 2026-03-04 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| JP2022142865A (ja) * | 2021-03-17 | 2022-10-03 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
| JP2022163433A (ja) * | 2021-04-14 | 2022-10-26 | 株式会社ニコン | 撮像素子及び撮像装置 |
| TWI782619B (zh) * | 2021-07-12 | 2022-11-01 | 力晶積成電子製造股份有限公司 | 堆疊半導體元件的製造方法 |
| CN116093120A (zh) * | 2021-11-04 | 2023-05-09 | 思特威(上海)电子科技股份有限公司 | Cmos图像传感器及其控制方法 |
| US20250374694A1 (en) | 2022-01-26 | 2025-12-04 | Sony Semiconductor Solutions Corporation | Photodetection device |
| TWI825870B (zh) * | 2022-02-21 | 2023-12-11 | 欣興電子股份有限公司 | 電子封裝結構及其製造方法 |
| KR20230144180A (ko) * | 2022-04-07 | 2023-10-16 | 삼성전자주식회사 | 이미지 센서 |
| JP2023178684A (ja) * | 2022-06-06 | 2023-12-18 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法、機器、基板、基板の製造方法 |
| US12520606B2 (en) * | 2022-08-02 | 2026-01-06 | Samsung Electronics Co., Ltd. | Image sensor |
| CN120202741A (zh) * | 2022-12-15 | 2025-06-24 | 索尼半导体解决方案公司 | 光检测装置和电子设备 |
| WO2024150531A1 (ja) * | 2023-01-13 | 2024-07-18 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
| WO2025069737A1 (ja) * | 2023-09-28 | 2025-04-03 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| JP2025060035A (ja) * | 2023-09-29 | 2025-04-10 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006019455A (ja) * | 2004-06-30 | 2006-01-19 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP2008134610A (ja) * | 2006-10-23 | 2008-06-12 | Sony Corp | 固体撮像素子 |
| JP2010016382A (ja) * | 2008-07-03 | 2010-01-21 | Samsung Electronics Co Ltd | Ｃｍｏｓイメージセンサおよびｃｍｏｓイメージセンサの製造方法 |
| JP2012094720A (ja) * | 2010-10-27 | 2012-05-17 | Sony Corp | 固体撮像装置、半導体装置、固体撮像装置の製造方法、半導体装置の製造方法、及び電子機器 |
| JP2014022448A (ja) * | 2012-07-13 | 2014-02-03 | Toshiba Corp | 固体撮像装置 |
| JP2016534557A (ja) * | 2013-08-05 | 2016-11-04 | アップル インコーポレイテッド | 埋込み型光シールド及び垂直ゲートを有する画像センサ |
| WO2017038403A1 (ja) * | 2015-09-01 | 2017-03-09 | ソニー株式会社 | 積層体 |
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| JP2000137246A (ja) | 1997-11-28 | 2000-05-16 | Matsushita Electric Ind Co Ltd | 反射型表示素子及び反射型表示素子を用いた映像装置 |
| JP4813113B2 (ja) | 2005-07-12 | 2011-11-09 | 浜松ホトニクス株式会社 | 発光素子試験装置 |
| JP4706970B2 (ja) * | 2006-02-16 | 2011-06-22 | 古河電気工業株式会社 | フォトニック結晶半導体光増幅器および集積型光半導体素子 |
| US7714368B2 (en) * | 2006-06-26 | 2010-05-11 | Aptina Imaging Corporation | Method and apparatus providing imager pixel array with grating structure and imager device containing the same |
| US7867907B2 (en) | 2006-10-17 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7925196B2 (en) | 2007-03-27 | 2011-04-12 | Brother Kogyo Kabushiki Kaisha | Image forming apparatus |
| US7858921B2 (en) * | 2008-05-05 | 2010-12-28 | Aptina Imaging Corporation | Guided-mode-resonance transmission color filters for color generation in CMOS image sensors |
| KR20100004174A (ko) | 2008-07-03 | 2010-01-13 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법, 상기 이미지 센서를포함하는 장치 및 그 제조 방법, 이미지 센서 제조용 기판및 그 제조 방법 |
| JP5470813B2 (ja) | 2008-11-20 | 2014-04-16 | ソニー株式会社 | 反射板、表示装置およびその製造方法 |
| JP5985136B2 (ja) * | 2009-03-19 | 2016-09-06 | ソニー株式会社 | 半導体装置とその製造方法、及び電子機器 |
| US8227736B2 (en) * | 2009-07-02 | 2012-07-24 | Visera Technologies Company Limited | Image sensor device with silicon microstructures and fabrication method thereof |
| JP5595298B2 (ja) * | 2010-04-06 | 2014-09-24 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| JP2012054321A (ja) | 2010-08-31 | 2012-03-15 | Sony Corp | 固体撮像素子及びその製造方法、並びに固体撮像装置及び撮像装置 |
| JP5579108B2 (ja) * | 2011-03-16 | 2014-08-27 | 株式会社東芝 | 半導体装置 |
| CN103022062B (zh) | 2011-07-19 | 2016-12-21 | 索尼公司 | 固体摄像器件及其制造方法和电子设备 |
| US9634158B2 (en) * | 2012-02-03 | 2017-04-25 | Sony Corporation | Semiconductor device and electronic equipment |
| JP5316667B2 (ja) | 2012-04-13 | 2013-10-16 | ソニー株式会社 | 固体撮像素子の製造方法 |
| JP2014099582A (ja) | 2012-10-18 | 2014-05-29 | Sony Corp | 固体撮像装置 |
| JP2015037102A (ja) * | 2013-08-12 | 2015-02-23 | 株式会社東芝 | 固体撮像装置 |
| US9548329B2 (en) * | 2014-07-02 | 2017-01-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Backside illuminated image sensor and method of manufacturing the same |
| US9397130B1 (en) * | 2014-12-26 | 2016-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor structure with crosstalk improvement |
| US9659985B2 (en) * | 2015-02-17 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Integrated circuit and image sensing device having metal shielding layer and related fabricating method |
| JP6079807B2 (ja) | 2015-03-24 | 2017-02-15 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| CN109314123B (zh) | 2016-07-06 | 2023-06-20 | 索尼半导体解决方案公司 | 成像元件、成像元件的制造方法以及电子设备 |
| JP6691101B2 (ja) | 2017-01-19 | 2020-04-28 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子 |
| JP2018129374A (ja) * | 2017-02-07 | 2018-08-16 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および半導体装置の製造方法 |
-
2020
- 2020-06-22 TW TW109121228A patent/TWI878310B/zh active
- 2020-06-22 TW TW113123069A patent/TWI912803B/zh active
- 2020-06-26 JP JP2021527757A patent/JP7675650B2/ja active Active
- 2020-06-26 US US17/620,901 patent/US12464841B2/en active Active
- 2020-06-26 WO PCT/JP2020/025146 patent/WO2020262583A1/ja not_active Ceased
- 2020-06-26 CN CN202080036268.4A patent/CN113892181B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006019455A (ja) * | 2004-06-30 | 2006-01-19 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP2008134610A (ja) * | 2006-10-23 | 2008-06-12 | Sony Corp | 固体撮像素子 |
| JP2010016382A (ja) * | 2008-07-03 | 2010-01-21 | Samsung Electronics Co Ltd | Ｃｍｏｓイメージセンサおよびｃｍｏｓイメージセンサの製造方法 |
| JP2012094720A (ja) * | 2010-10-27 | 2012-05-17 | Sony Corp | 固体撮像装置、半導体装置、固体撮像装置の製造方法、半導体装置の製造方法、及び電子機器 |
| JP2014022448A (ja) * | 2012-07-13 | 2014-02-03 | Toshiba Corp | 固体撮像装置 |
| JP2016534557A (ja) * | 2013-08-05 | 2016-11-04 | アップル インコーポレイテッド | 埋込み型光シールド及び垂直ゲートを有する画像センサ |
| WO2017038403A1 (ja) * | 2015-09-01 | 2017-03-09 | ソニー株式会社 | 積層体 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020262583A1 (ja) | 2020-12-30 |
| US12464841B2 (en) | 2025-11-04 |
| JP7675650B2 (ja) | 2025-05-13 |
| TW202445852A (zh) | 2024-11-16 |
| TW202118026A (zh) | 2021-05-01 |
| CN113892181B (zh) | 2025-07-18 |
| CN113892181A (zh) | 2022-01-04 |
| US20220352226A1 (en) | 2022-11-03 |
| TWI912803B (zh) | 2026-01-21 |
| TWI878310B (zh) | 2025-04-01 |
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