TWI876487B - 振動裝置及振動裝置之製造方法 - Google Patents

振動裝置及振動裝置之製造方法 Download PDF

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Publication number
TWI876487B
TWI876487B TW112131696A TW112131696A TWI876487B TW I876487 B TWI876487 B TW I876487B TW 112131696 A TW112131696 A TW 112131696A TW 112131696 A TW112131696 A TW 112131696A TW I876487 B TWI876487 B TW I876487B
Authority
TW
Taiwan
Prior art keywords
vibration
substrate
layer
recess
electrode
Prior art date
Application number
TW112131696A
Other languages
English (en)
Chinese (zh)
Other versions
TW202425530A (zh
Inventor
川口義之
青野重雄
Original Assignee
日商京瓷股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商京瓷股份有限公司 filed Critical 日商京瓷股份有限公司
Publication of TW202425530A publication Critical patent/TW202425530A/zh
Application granted granted Critical
Publication of TWI876487B publication Critical patent/TWI876487B/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/058—Holders or supports for surface acoustic wave devices
    • H03H9/059—Holders or supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
TW112131696A 2022-08-30 2023-08-23 振動裝置及振動裝置之製造方法 TWI876487B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2022/032580 WO2024047745A1 (ja) 2022-08-30 2022-08-30 振動デバイス
WOPCT/JP2022/032580 2022-08-30

Publications (2)

Publication Number Publication Date
TW202425530A TW202425530A (zh) 2024-06-16
TWI876487B true TWI876487B (zh) 2025-03-11

Family

ID=90098925

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112131696A TWI876487B (zh) 2022-08-30 2023-08-23 振動裝置及振動裝置之製造方法

Country Status (5)

Country Link
US (1) US20260074672A1 (https=)
JP (1) JP7723846B2 (https=)
CN (1) CN119586004A (https=)
TW (1) TWI876487B (https=)
WO (2) WO2024047745A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050166677A1 (en) * 2004-02-02 2005-08-04 Nasiri Steven S. Vertically integrated MEMS structure with electronics in a hermetically sealed cavity
US20070096605A1 (en) * 2004-06-25 2007-05-03 Murata Manufacturing Co., Ltd. Piezoelectric device
US20140292431A1 (en) * 2013-03-29 2014-10-02 Seiko Epson Corporation Resonator element, resonator, oscillator, electronic apparatus, sensor, and moving object
WO2015162958A1 (ja) * 2014-04-24 2015-10-29 株式会社村田製作所 水晶振動装置及びその製造方法
US20220209741A1 (en) * 2020-12-28 2022-06-30 Win Semiconductors Corp. Bulk acoustic wave resonator and formation method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237406A (ja) 2005-02-25 2006-09-07 Toshiba Corp 樹脂封止型電子部品装置
JP2006339701A (ja) * 2005-05-31 2006-12-14 Kyocera Kinseki Corp 圧電振動子
JP2008060382A (ja) * 2006-08-31 2008-03-13 Matsushita Electric Ind Co Ltd 電子部品及びその製造方法
JP5119866B2 (ja) 2007-03-22 2013-01-16 セイコーエプソン株式会社 水晶デバイス及びその封止方法
JP4893602B2 (ja) * 2007-11-26 2012-03-07 株式会社大真空 圧電振動デバイスおよび圧電振動デバイスの気密封止方法
JP2010246001A (ja) * 2009-04-09 2010-10-28 Seiko Epson Corp 電子部品及びその製造方法
JP2012191446A (ja) * 2011-03-10 2012-10-04 Seiko Instruments Inc 電子デバイス及び電子デバイスの製造方法
JP2013162030A (ja) * 2012-02-07 2013-08-19 Seiko Epson Corp 電子デバイス、及び電子機器
JP5984487B2 (ja) * 2012-04-27 2016-09-06 京セラクリスタルデバイス株式会社 水晶デバイス
JP6295611B2 (ja) * 2013-11-05 2018-03-20 セイコーエプソン株式会社 振動子、発振器、電子機器、および移動体
JP2017060054A (ja) * 2015-09-17 2017-03-23 エスアイアイ・クリスタルテクノロジー株式会社 圧電振動片及び圧電振動子
WO2019044490A1 (ja) * 2017-09-01 2019-03-07 株式会社村田製作所 圧電振動子
JP7543899B2 (ja) * 2020-12-23 2024-09-03 株式会社大真空 圧電振動デバイス

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050166677A1 (en) * 2004-02-02 2005-08-04 Nasiri Steven S. Vertically integrated MEMS structure with electronics in a hermetically sealed cavity
US20070096605A1 (en) * 2004-06-25 2007-05-03 Murata Manufacturing Co., Ltd. Piezoelectric device
US20140292431A1 (en) * 2013-03-29 2014-10-02 Seiko Epson Corporation Resonator element, resonator, oscillator, electronic apparatus, sensor, and moving object
WO2015162958A1 (ja) * 2014-04-24 2015-10-29 株式会社村田製作所 水晶振動装置及びその製造方法
US20220209741A1 (en) * 2020-12-28 2022-06-30 Win Semiconductors Corp. Bulk acoustic wave resonator and formation method thereof

Also Published As

Publication number Publication date
JP7723846B2 (ja) 2025-08-14
WO2024047745A1 (ja) 2024-03-07
CN119586004A (zh) 2025-03-07
WO2024048201A1 (ja) 2024-03-07
US20260074672A1 (en) 2026-03-12
TW202425530A (zh) 2024-06-16
JPWO2024048201A1 (https=) 2024-03-07

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