JPWO2024048201A1 - - Google Patents

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Publication number
JPWO2024048201A1
JPWO2024048201A1 JP2024544068A JP2024544068A JPWO2024048201A1 JP WO2024048201 A1 JPWO2024048201 A1 JP WO2024048201A1 JP 2024544068 A JP2024544068 A JP 2024544068A JP 2024544068 A JP2024544068 A JP 2024544068A JP WO2024048201 A1 JPWO2024048201 A1 JP WO2024048201A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024544068A
Other languages
Japanese (ja)
Other versions
JP7723846B2 (ja
JPWO2024048201A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024048201A1 publication Critical patent/JPWO2024048201A1/ja
Publication of JPWO2024048201A5 publication Critical patent/JPWO2024048201A5/ja
Application granted granted Critical
Publication of JP7723846B2 publication Critical patent/JP7723846B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/058—Holders or supports for surface acoustic wave devices
    • H03H9/059—Holders or supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2024544068A 2022-08-30 2023-08-04 振動デバイス及び振動デバイスの製造方法 Active JP7723846B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2022/032580 WO2024047745A1 (ja) 2022-08-30 2022-08-30 振動デバイス
JPPCT/JP2022/032580 2022-08-30
PCT/JP2023/028524 WO2024048201A1 (ja) 2022-08-30 2023-08-04 振動デバイス及び振動デバイスの製造方法

Publications (3)

Publication Number Publication Date
JPWO2024048201A1 true JPWO2024048201A1 (https=) 2024-03-07
JPWO2024048201A5 JPWO2024048201A5 (https=) 2025-04-18
JP7723846B2 JP7723846B2 (ja) 2025-08-14

Family

ID=90098925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024544068A Active JP7723846B2 (ja) 2022-08-30 2023-08-04 振動デバイス及び振動デバイスの製造方法

Country Status (5)

Country Link
US (1) US20260074672A1 (https=)
JP (1) JP7723846B2 (https=)
CN (1) CN119586004A (https=)
TW (1) TWI876487B (https=)
WO (2) WO2024047745A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237406A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 樹脂封止型電子部品装置
JP2006339701A (ja) * 2005-05-31 2006-12-14 Kyocera Kinseki Corp 圧電振動子
JP2008271491A (ja) * 2007-03-22 2008-11-06 Epson Toyocom Corp 水晶デバイス及びその封止方法
JP2013232736A (ja) * 2012-04-27 2013-11-14 Kyocera Crystal Device Corp 水晶デバイス
JPWO2019044490A1 (ja) * 2017-09-01 2020-09-17 株式会社村田製作所 圧電振動子
JP2022099603A (ja) * 2020-12-23 2022-07-05 株式会社大真空 圧電振動デバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7104129B2 (en) * 2004-02-02 2006-09-12 Invensense Inc. Vertically integrated MEMS structure with electronics in a hermetically sealed cavity
JPWO2006001125A1 (ja) * 2004-06-25 2008-04-17 株式会社村田製作所 圧電デバイス
JP2008060382A (ja) * 2006-08-31 2008-03-13 Matsushita Electric Ind Co Ltd 電子部品及びその製造方法
JP4893602B2 (ja) * 2007-11-26 2012-03-07 株式会社大真空 圧電振動デバイスおよび圧電振動デバイスの気密封止方法
JP2010246001A (ja) * 2009-04-09 2010-10-28 Seiko Epson Corp 電子部品及びその製造方法
JP2012191446A (ja) * 2011-03-10 2012-10-04 Seiko Instruments Inc 電子デバイス及び電子デバイスの製造方法
JP2013162030A (ja) * 2012-02-07 2013-08-19 Seiko Epson Corp 電子デバイス、及び電子機器
KR20140118792A (ko) * 2013-03-29 2014-10-08 세이코 엡슨 가부시키가이샤 진동 소자, 진동자, 발진기, 전자 기기, 센서, 및 이동체
JP6295611B2 (ja) * 2013-11-05 2018-03-20 セイコーエプソン株式会社 振動子、発振器、電子機器、および移動体
WO2015162958A1 (ja) * 2014-04-24 2015-10-29 株式会社村田製作所 水晶振動装置及びその製造方法
JP2017060054A (ja) * 2015-09-17 2017-03-23 エスアイアイ・クリスタルテクノロジー株式会社 圧電振動片及び圧電振動子
US11990889B2 (en) * 2020-12-28 2024-05-21 Win Semiconductors Corp. Bulk acoustic wave resonator and formation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237406A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 樹脂封止型電子部品装置
JP2006339701A (ja) * 2005-05-31 2006-12-14 Kyocera Kinseki Corp 圧電振動子
JP2008271491A (ja) * 2007-03-22 2008-11-06 Epson Toyocom Corp 水晶デバイス及びその封止方法
JP2013232736A (ja) * 2012-04-27 2013-11-14 Kyocera Crystal Device Corp 水晶デバイス
JPWO2019044490A1 (ja) * 2017-09-01 2020-09-17 株式会社村田製作所 圧電振動子
JP2022099603A (ja) * 2020-12-23 2022-07-05 株式会社大真空 圧電振動デバイス

Also Published As

Publication number Publication date
JP7723846B2 (ja) 2025-08-14
WO2024047745A1 (ja) 2024-03-07
CN119586004A (zh) 2025-03-07
WO2024048201A1 (ja) 2024-03-07
US20260074672A1 (en) 2026-03-12
TW202425530A (zh) 2024-06-16
TWI876487B (zh) 2025-03-11

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