TWI845711B - 組成物、套組、基板的處理方法 - Google Patents

組成物、套組、基板的處理方法 Download PDF

Info

Publication number
TWI845711B
TWI845711B TW109121174A TW109121174A TWI845711B TW I845711 B TWI845711 B TW I845711B TW 109121174 A TW109121174 A TW 109121174A TW 109121174 A TW109121174 A TW 109121174A TW I845711 B TWI845711 B TW I845711B
Authority
TW
Taiwan
Prior art keywords
composition
acid
metal
substrate
aforementioned
Prior art date
Application number
TW109121174A
Other languages
English (en)
Chinese (zh)
Other versions
TW202102721A (zh
Inventor
水谷篤史
上村哲也
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202102721A publication Critical patent/TW202102721A/zh
Application granted granted Critical
Publication of TWI845711B publication Critical patent/TWI845711B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
  • ing And Chemical Polishing (AREA)
TW109121174A 2019-07-05 2020-06-22 組成物、套組、基板的處理方法 TWI845711B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019125802 2019-07-05
JP2019-125802 2019-07-05
JP2020100897 2020-06-10
JP2020-100897 2020-06-10

Publications (2)

Publication Number Publication Date
TW202102721A TW202102721A (zh) 2021-01-16
TWI845711B true TWI845711B (zh) 2024-06-21

Family

ID=74114700

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109121174A TWI845711B (zh) 2019-07-05 2020-06-22 組成物、套組、基板的處理方法

Country Status (5)

Country Link
US (1) US12012658B2 (https=)
JP (2) JPWO2021005980A1 (https=)
KR (1) KR102815121B1 (https=)
TW (1) TWI845711B (https=)
WO (1) WO2021005980A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7531343B2 (ja) * 2020-08-11 2024-08-09 東京応化工業株式会社 ルテニウム配線の製造方法
JP7606876B2 (ja) * 2021-02-03 2024-12-26 東京応化工業株式会社 ルテニウム含有層を洗浄又はエッチングするために用いられる薬液、及びルテニウム配線の製造方法
JP7766443B2 (ja) * 2021-09-28 2025-11-10 東京応化工業株式会社 エッチング液、金属含有層のエッチング方法、及び金属配線の形成方法
KR20240121749A (ko) * 2021-12-17 2024-08-09 가부시끼가이샤 레조낙 란탄 화합물의 제거 방법 및 란탄 화합물 제거용 처리액
KR20230128967A (ko) * 2022-02-28 2023-09-05 동우 화인켐 주식회사 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판
JPWO2023176708A1 (https=) * 2022-03-17 2023-09-21
WO2024048241A1 (ja) * 2022-08-31 2024-03-07 富士フイルム株式会社 組成物、被処理物の処理方法、半導体デバイスの製造方法
CN115678439B (zh) * 2022-10-31 2024-04-23 上海应用技术大学 一种抑制铜钴电偶腐蚀的碱性抛光液及其制备方法
TWI883535B (zh) * 2023-09-12 2025-05-11 日商斯庫林集團股份有限公司 基板處理方法
WO2025182542A1 (ja) * 2024-02-29 2025-09-04 富士フイルム株式会社 半導体処理液、半導体デバイスの製造方法
CN118516671A (zh) * 2024-05-24 2024-08-20 四川和晟达电子科技有限公司 一种蚀刻液组合物及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201144484A (en) * 2009-12-17 2011-12-16 Showa Denko Kk Composition for etching ruthenium-based metal and method for preparing same
TW201504397A (zh) * 2013-06-06 2015-02-01 先進科技材料公司 選擇性蝕刻氮化鈦之組成物及方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3087685B2 (ja) * 1997-06-04 2000-09-11 日本電気株式会社 半導体装置の製造方法
JP3395696B2 (ja) 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法
JP3434750B2 (ja) 1999-09-30 2003-08-11 Ｎｅｃエレクトロニクス株式会社 洗浄装置のライン構成及びその設計方法
JP2001127019A (ja) 1999-10-29 2001-05-11 Hitachi Chem Co Ltd 金属用研磨液及びそれを用いた基板の研磨方法
JP3907151B2 (ja) 2000-01-25 2007-04-18 株式会社東芝 半導体装置の製造方法
JP2002231676A (ja) * 2001-01-30 2002-08-16 Toshiba Corp ウェハ洗浄方法及びウェハ洗浄装置
JP2003347299A (ja) 2002-05-24 2003-12-05 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2006060218A (ja) * 2004-08-17 2006-03-02 Samsung Electronics Co Ltd Ｃｍｐスラリー、ｃｍｐスラリーを用いる化学機械的研磨方法、及び化学機械的研磨方法を用いるキャパシタ表面の形成方法
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
JP2012504871A (ja) 2008-10-02 2012-02-23 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 高度な金属負荷及びシリコン基板の表面パッシベーションのための界面活性剤／消泡剤混合物の使用
JP5439466B2 (ja) * 2011-12-26 2014-03-12 富士フイルム株式会社 シリコンエッチング方法、これに用いられるシリコンエッチング液、及びそのキット
US10472567B2 (en) 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
JP6238741B2 (ja) * 2013-12-27 2017-11-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
TWI659088B (zh) * 2014-03-18 2019-05-11 Fujifilm Electronic Materials U. S. A., Inc. 蝕刻組成物
CN106661431B (zh) * 2014-06-25 2019-06-28 嘉柏微电子材料股份公司 铜阻挡物的化学机械抛光组合物
WO2016140246A1 (ja) * 2015-03-04 2016-09-09 日立化成株式会社 Ｃｍｐ用研磨液、及び、これを用いた研磨方法
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
KR102362022B1 (ko) 2016-07-12 2022-02-10 가부시키가이샤 노리타케 캄파니 리미티드 연마체 및 그 제조 방법
WO2018021038A1 (ja) * 2016-07-29 2018-02-01 富士フイルム株式会社 処理液及び基板洗浄方法
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201144484A (en) * 2009-12-17 2011-12-16 Showa Denko Kk Composition for etching ruthenium-based metal and method for preparing same
TW201504397A (zh) * 2013-06-06 2015-02-01 先進科技材料公司 選擇性蝕刻氮化鈦之組成物及方法

Also Published As

Publication number Publication date
WO2021005980A1 (ja) 2021-01-14
KR20220016516A (ko) 2022-02-09
JPWO2021005980A1 (https=) 2021-01-14
KR102815121B1 (ko) 2025-06-04
TW202102721A (zh) 2021-01-16
US12012658B2 (en) 2024-06-18
JP7609920B2 (ja) 2025-01-07
US20220119960A1 (en) 2022-04-21
JP2023107768A (ja) 2023-08-03

Similar Documents

Publication Publication Date Title
TWI845711B (zh) 組成物、套組、基板的處理方法
JP7247277B2 (ja) 薬液、基板の処理方法
JP7469474B2 (ja) 半導体基板用洗浄液
TWI902733B (zh) 洗淨液、洗淨方法
KR102683037B1 (ko) 약액, 기판의 처리 방법
TW201631645A (zh) 基板處理方法及半導體元件的製造方法
TWI912347B (zh) 組成物、基板的處理方法
TWI911179B (zh) 洗淨液、洗淨方法
US20250230358A1 (en) Composition, method for treating object to be treated, and method for manufacturing semiconductor device
TWI891846B (zh) 藥液、藥液收容體、基板的處理方法
TWI837170B (zh) 藥液、基板的處理方法
TW202421768A (zh) 處理液、被對象物的處理方法及半導體器件的製造方法
WO2021039137A1 (ja) 洗浄剤組成物
KR20250041006A (ko) 피처리물의 처리 방법, 처리액, 전자 디바이스의 제조 방법
TWI914290B (zh) 洗淨液、洗淨方法