JPWO2021005980A1 - - Google Patents
Info
- Publication number
- JPWO2021005980A1 JPWO2021005980A1 JP2021530554A JP2021530554A JPWO2021005980A1 JP WO2021005980 A1 JPWO2021005980 A1 JP WO2021005980A1 JP 2021530554 A JP2021530554 A JP 2021530554A JP 2021530554 A JP2021530554 A JP 2021530554A JP WO2021005980 A1 JPWO2021005980 A1 JP WO2021005980A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023077125A JP2023107768A (ja) | 2019-07-05 | 2023-05-09 | 組成物、キット、基板の処理方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019125802 | 2019-07-05 | ||
JP2020100897 | 2020-06-10 | ||
PCT/JP2020/023734 WO2021005980A1 (ja) | 2019-07-05 | 2020-06-17 | 組成物、キット、基板の処理方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023077125A Division JP2023107768A (ja) | 2019-07-05 | 2023-05-09 | 組成物、キット、基板の処理方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2021005980A1 true JPWO2021005980A1 (ja) | 2021-01-14 |
Family
ID=74114700
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021530554A Pending JPWO2021005980A1 (ja) | 2019-07-05 | 2020-06-17 | |
JP2023077125A Pending JP2023107768A (ja) | 2019-07-05 | 2023-05-09 | 組成物、キット、基板の処理方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023077125A Pending JP2023107768A (ja) | 2019-07-05 | 2023-05-09 | 組成物、キット、基板の処理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220119960A1 (ja) |
JP (2) | JPWO2021005980A1 (ja) |
KR (1) | KR20220016516A (ja) |
TW (1) | TW202102721A (ja) |
WO (1) | WO2021005980A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022032259A (ja) * | 2020-08-11 | 2022-02-25 | 東京応化工業株式会社 | ルテニウム配線の製造方法 |
WO2023112453A1 (ja) * | 2021-12-17 | 2023-06-22 | 株式会社レゾナック | ランタン化合物の除去方法及びランタン化合物除去用処理液 |
WO2023176708A1 (ja) * | 2022-03-17 | 2023-09-21 | 富士フイルム株式会社 | 洗浄組成物、半導体基板の洗浄方法 |
WO2024048241A1 (ja) * | 2022-08-31 | 2024-03-07 | 富士フイルム株式会社 | 組成物、被処理物の処理方法、半導体デバイスの製造方法 |
CN115678439B (zh) * | 2022-10-31 | 2024-04-23 | 上海应用技术大学 | 一种抑制铜钴电偶腐蚀的碱性抛光液及其制备方法 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335444A (ja) * | 1997-06-04 | 1998-12-18 | Nec Corp | 半導体装置の製造方法 |
JP2000269178A (ja) * | 1999-03-15 | 2000-09-29 | Nec Corp | エッチング除去方法および装置と洗浄方法および装置 |
JP2001102347A (ja) * | 1999-09-30 | 2001-04-13 | Nec Corp | 洗浄装置のライン構成及びその設計方法 |
JP2002231676A (ja) * | 2001-01-30 | 2002-08-16 | Toshiba Corp | ウェハ洗浄方法及びウェハ洗浄装置 |
JP2006060218A (ja) * | 2004-08-17 | 2006-03-02 | Samsung Electronics Co Ltd | Cmpスラリー、cmpスラリーを用いる化学機械的研磨方法、及び化学機械的研磨方法を用いるキャパシタ表面の形成方法 |
JP2008172222A (ja) * | 2006-12-21 | 2008-07-24 | Rohm & Haas Electronic Materials Cmp Holdings Inc | ルテニウムバリヤ研磨スラリー |
WO2011074601A1 (ja) * | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
JP2015126194A (ja) * | 2013-12-27 | 2015-07-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2016510175A (ja) * | 2013-03-04 | 2016-04-04 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
JP2016527707A (ja) * | 2013-06-06 | 2016-09-08 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 窒化チタンを選択的にエッチングするための組成物及び方法 |
WO2016140246A1 (ja) * | 2015-03-04 | 2016-09-09 | 日立化成株式会社 | Cmp用研磨液、及び、これを用いた研磨方法 |
JP2017525796A (ja) * | 2014-06-25 | 2017-09-07 | キャボット マイクロエレクトロニクス コーポレイション | 銅バリアの化学機械研磨組成物 |
WO2018021038A1 (ja) * | 2016-07-29 | 2018-02-01 | 富士フイルム株式会社 | 処理液及び基板洗浄方法 |
JP2019071413A (ja) * | 2017-10-05 | 2019-05-09 | フジフィルム プラナー ソリューションズ、 エルエルシー | 帯電した研磨剤を含有する研磨組成物 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009081247A (ja) | 2007-09-26 | 2009-04-16 | Panasonic Corp | ルテニウム膜のエッチング方法 |
EP3119924A4 (en) * | 2014-03-18 | 2017-11-29 | FUJIFILM Electronic Materials U.S.A, Inc. | Etching composition |
US10253216B2 (en) * | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
-
2020
- 2020-06-17 JP JP2021530554A patent/JPWO2021005980A1/ja active Pending
- 2020-06-17 WO PCT/JP2020/023734 patent/WO2021005980A1/ja active Application Filing
- 2020-06-17 KR KR1020227000002A patent/KR20220016516A/ko not_active Application Discontinuation
- 2020-06-22 TW TW109121174A patent/TW202102721A/zh unknown
-
2021
- 2021-12-29 US US17/565,419 patent/US20220119960A1/en active Pending
-
2023
- 2023-05-09 JP JP2023077125A patent/JP2023107768A/ja active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335444A (ja) * | 1997-06-04 | 1998-12-18 | Nec Corp | 半導体装置の製造方法 |
JP2000269178A (ja) * | 1999-03-15 | 2000-09-29 | Nec Corp | エッチング除去方法および装置と洗浄方法および装置 |
JP2001102347A (ja) * | 1999-09-30 | 2001-04-13 | Nec Corp | 洗浄装置のライン構成及びその設計方法 |
JP2002231676A (ja) * | 2001-01-30 | 2002-08-16 | Toshiba Corp | ウェハ洗浄方法及びウェハ洗浄装置 |
JP2006060218A (ja) * | 2004-08-17 | 2006-03-02 | Samsung Electronics Co Ltd | Cmpスラリー、cmpスラリーを用いる化学機械的研磨方法、及び化学機械的研磨方法を用いるキャパシタ表面の形成方法 |
JP2008172222A (ja) * | 2006-12-21 | 2008-07-24 | Rohm & Haas Electronic Materials Cmp Holdings Inc | ルテニウムバリヤ研磨スラリー |
WO2011074601A1 (ja) * | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
JP2016510175A (ja) * | 2013-03-04 | 2016-04-04 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
JP2016527707A (ja) * | 2013-06-06 | 2016-09-08 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 窒化チタンを選択的にエッチングするための組成物及び方法 |
JP2015126194A (ja) * | 2013-12-27 | 2015-07-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2017525796A (ja) * | 2014-06-25 | 2017-09-07 | キャボット マイクロエレクトロニクス コーポレイション | 銅バリアの化学機械研磨組成物 |
WO2016140246A1 (ja) * | 2015-03-04 | 2016-09-09 | 日立化成株式会社 | Cmp用研磨液、及び、これを用いた研磨方法 |
WO2018021038A1 (ja) * | 2016-07-29 | 2018-02-01 | 富士フイルム株式会社 | 処理液及び基板洗浄方法 |
JP2019071413A (ja) * | 2017-10-05 | 2019-05-09 | フジフィルム プラナー ソリューションズ、 エルエルシー | 帯電した研磨剤を含有する研磨組成物 |
Also Published As
Publication number | Publication date |
---|---|
WO2021005980A1 (ja) | 2021-01-14 |
US20220119960A1 (en) | 2022-04-21 |
JP2023107768A (ja) | 2023-08-03 |
TW202102721A (zh) | 2021-01-16 |
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