JPWO2021005980A1 - - Google Patents

Info

Publication number
JPWO2021005980A1
JPWO2021005980A1 JP2021530554A JP2021530554A JPWO2021005980A1 JP WO2021005980 A1 JPWO2021005980 A1 JP WO2021005980A1 JP 2021530554 A JP2021530554 A JP 2021530554A JP 2021530554 A JP2021530554 A JP 2021530554A JP WO2021005980 A1 JPWO2021005980 A1 JP WO2021005980A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021530554A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021005980A1 publication Critical patent/JPWO2021005980A1/ja
Priority to JP2023077125A priority Critical patent/JP7609920B2/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
  • ing And Chemical Polishing (AREA)
JP2021530554A 2019-07-05 2020-06-17 Pending JPWO2021005980A1 (https=)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023077125A JP7609920B2 (ja) 2019-07-05 2023-05-09 組成物、キット、基板の処理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019125802 2019-07-05
JP2020100897 2020-06-10
PCT/JP2020/023734 WO2021005980A1 (ja) 2019-07-05 2020-06-17 組成物、キット、基板の処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023077125A Division JP7609920B2 (ja) 2019-07-05 2023-05-09 組成物、キット、基板の処理方法

Publications (1)

Publication Number Publication Date
JPWO2021005980A1 true JPWO2021005980A1 (https=) 2021-01-14

Family

ID=74114700

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021530554A Pending JPWO2021005980A1 (https=) 2019-07-05 2020-06-17
JP2023077125A Active JP7609920B2 (ja) 2019-07-05 2023-05-09 組成物、キット、基板の処理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023077125A Active JP7609920B2 (ja) 2019-07-05 2023-05-09 組成物、キット、基板の処理方法

Country Status (5)

Country Link
US (1) US12012658B2 (https=)
JP (2) JPWO2021005980A1 (https=)
KR (1) KR102815121B1 (https=)
TW (1) TWI845711B (https=)
WO (1) WO2021005980A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7531343B2 (ja) * 2020-08-11 2024-08-09 東京応化工業株式会社 ルテニウム配線の製造方法
JP7606876B2 (ja) * 2021-02-03 2024-12-26 東京応化工業株式会社 ルテニウム含有層を洗浄又はエッチングするために用いられる薬液、及びルテニウム配線の製造方法
JP7766443B2 (ja) * 2021-09-28 2025-11-10 東京応化工業株式会社 エッチング液、金属含有層のエッチング方法、及び金属配線の形成方法
KR20240121749A (ko) * 2021-12-17 2024-08-09 가부시끼가이샤 레조낙 란탄 화합물의 제거 방법 및 란탄 화합물 제거용 처리액
KR20230128967A (ko) * 2022-02-28 2023-09-05 동우 화인켐 주식회사 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판
JPWO2023176708A1 (https=) * 2022-03-17 2023-09-21
WO2024048241A1 (ja) * 2022-08-31 2024-03-07 富士フイルム株式会社 組成物、被処理物の処理方法、半導体デバイスの製造方法
CN115678439B (zh) * 2022-10-31 2024-04-23 上海应用技术大学 一种抑制铜钴电偶腐蚀的碱性抛光液及其制备方法
TWI883535B (zh) * 2023-09-12 2025-05-11 日商斯庫林集團股份有限公司 基板處理方法
WO2025182542A1 (ja) * 2024-02-29 2025-09-04 富士フイルム株式会社 半導体処理液、半導体デバイスの製造方法
CN118516671A (zh) * 2024-05-24 2024-08-20 四川和晟达电子科技有限公司 一种蚀刻液组合物及其制备方法和应用

Citations (14)

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Publication number Priority date Publication date Assignee Title
JPH10335444A (ja) * 1997-06-04 1998-12-18 Nec Corp 半導体装置の製造方法
JP2000269178A (ja) * 1999-03-15 2000-09-29 Nec Corp エッチング除去方法および装置と洗浄方法および装置
JP2001102347A (ja) * 1999-09-30 2001-04-13 Nec Corp 洗浄装置のライン構成及びその設計方法
JP2002231676A (ja) * 2001-01-30 2002-08-16 Toshiba Corp ウェハ洗浄方法及びウェハ洗浄装置
JP2006060218A (ja) * 2004-08-17 2006-03-02 Samsung Electronics Co Ltd Ｃｍｐスラリー、ｃｍｐスラリーを用いる化学機械的研磨方法、及び化学機械的研磨方法を用いるキャパシタ表面の形成方法
JP2008172222A (ja) * 2006-12-21 2008-07-24 Rohm & Haas Electronic Materials Cmp Holdings Inc ルテニウムバリヤ研磨スラリー
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
JP2015126194A (ja) * 2013-12-27 2015-07-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2016510175A (ja) * 2013-03-04 2016-04-04 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 窒化チタンを選択的にエッチングするための組成物および方法
JP2016527707A (ja) * 2013-06-06 2016-09-08 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 窒化チタンを選択的にエッチングするための組成物及び方法
WO2016140246A1 (ja) * 2015-03-04 2016-09-09 日立化成株式会社 Ｃｍｐ用研磨液、及び、これを用いた研磨方法
JP2017525796A (ja) * 2014-06-25 2017-09-07 キャボット マイクロエレクトロニクス コーポレイション 銅バリアの化学機械研磨組成物
WO2018021038A1 (ja) * 2016-07-29 2018-02-01 富士フイルム株式会社 処理液及び基板洗浄方法
JP2019071413A (ja) * 2017-10-05 2019-05-09 フジフィルム プラナー ソリューションズ、 エルエルシー 帯電した研磨剤を含有する研磨組成物

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JP2001127019A (ja) 1999-10-29 2001-05-11 Hitachi Chem Co Ltd 金属用研磨液及びそれを用いた基板の研磨方法
JP3907151B2 (ja) 2000-01-25 2007-04-18 株式会社東芝 半導体装置の製造方法
JP2003347299A (ja) 2002-05-24 2003-12-05 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
JP2012504871A (ja) 2008-10-02 2012-02-23 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 高度な金属負荷及びシリコン基板の表面パッシベーションのための界面活性剤／消泡剤混合物の使用
JP5439466B2 (ja) * 2011-12-26 2014-03-12 富士フイルム株式会社 シリコンエッチング方法、これに用いられるシリコンエッチング液、及びそのキット
TWI659088B (zh) * 2014-03-18 2019-05-11 Fujifilm Electronic Materials U. S. A., Inc. 蝕刻組成物
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
KR102362022B1 (ko) 2016-07-12 2022-02-10 가부시키가이샤 노리타케 캄파니 리미티드 연마체 및 그 제조 방법

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335444A (ja) * 1997-06-04 1998-12-18 Nec Corp 半導体装置の製造方法
JP2000269178A (ja) * 1999-03-15 2000-09-29 Nec Corp エッチング除去方法および装置と洗浄方法および装置
JP2001102347A (ja) * 1999-09-30 2001-04-13 Nec Corp 洗浄装置のライン構成及びその設計方法
JP2002231676A (ja) * 2001-01-30 2002-08-16 Toshiba Corp ウェハ洗浄方法及びウェハ洗浄装置
JP2006060218A (ja) * 2004-08-17 2006-03-02 Samsung Electronics Co Ltd Ｃｍｐスラリー、ｃｍｐスラリーを用いる化学機械的研磨方法、及び化学機械的研磨方法を用いるキャパシタ表面の形成方法
JP2008172222A (ja) * 2006-12-21 2008-07-24 Rohm & Haas Electronic Materials Cmp Holdings Inc ルテニウムバリヤ研磨スラリー
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
JP2016510175A (ja) * 2013-03-04 2016-04-04 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 窒化チタンを選択的にエッチングするための組成物および方法
JP2016527707A (ja) * 2013-06-06 2016-09-08 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 窒化チタンを選択的にエッチングするための組成物及び方法
JP2015126194A (ja) * 2013-12-27 2015-07-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2017525796A (ja) * 2014-06-25 2017-09-07 キャボット マイクロエレクトロニクス コーポレイション 銅バリアの化学機械研磨組成物
WO2016140246A1 (ja) * 2015-03-04 2016-09-09 日立化成株式会社 Ｃｍｐ用研磨液、及び、これを用いた研磨方法
WO2018021038A1 (ja) * 2016-07-29 2018-02-01 富士フイルム株式会社 処理液及び基板洗浄方法
JP2019071413A (ja) * 2017-10-05 2019-05-09 フジフィルム プラナー ソリューションズ、 エルエルシー 帯電した研磨剤を含有する研磨組成物

Also Published As

Publication number Publication date
WO2021005980A1 (ja) 2021-01-14
KR20220016516A (ko) 2022-02-09
TWI845711B (zh) 2024-06-21
KR102815121B1 (ko) 2025-06-04
TW202102721A (zh) 2021-01-16
US12012658B2 (en) 2024-06-18
JP7609920B2 (ja) 2025-01-07
US20220119960A1 (en) 2022-04-21
JP2023107768A (ja) 2023-08-03

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