TWI837439B - 電漿處理裝置之載置台之清潔方法及電漿處理裝置 - Google Patents

電漿處理裝置之載置台之清潔方法及電漿處理裝置 Download PDF

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Publication number
TWI837439B
TWI837439B TW109139879A TW109139879A TWI837439B TW I837439 B TWI837439 B TW I837439B TW 109139879 A TW109139879 A TW 109139879A TW 109139879 A TW109139879 A TW 109139879A TW I837439 B TWI837439 B TW I837439B
Authority
TW
Taiwan
Prior art keywords
substrate
plasma
processing
mounting table
cleaning method
Prior art date
Application number
TW109139879A
Other languages
English (en)
Chinese (zh)
Other versions
TW202137321A (zh
Inventor
高山貴光
佐佐木淳一
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202137321A publication Critical patent/TW202137321A/zh
Application granted granted Critical
Publication of TWI837439B publication Critical patent/TWI837439B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20235—Z movement or adjustment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW109139879A 2019-11-29 2020-11-16 電漿處理裝置之載置台之清潔方法及電漿處理裝置 TWI837439B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019216210A JP7229904B2 (ja) 2019-11-29 2019-11-29 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置
JP2019-216210 2019-11-29

Publications (2)

Publication Number Publication Date
TW202137321A TW202137321A (zh) 2021-10-01
TWI837439B true TWI837439B (zh) 2024-04-01

Family

ID=76043050

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109139879A TWI837439B (zh) 2019-11-29 2020-11-16 電漿處理裝置之載置台之清潔方法及電漿處理裝置

Country Status (5)

Country Link
US (2) US11865591B2 (https=)
JP (1) JP7229904B2 (https=)
KR (1) KR102721582B1 (https=)
CN (2) CN117637431B (https=)
TW (1) TWI837439B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118402047A (zh) * 2021-12-23 2024-07-26 东京毅力科创株式会社 等离子体处理装置
JP7776234B2 (ja) 2022-11-28 2025-11-26 東京エレクトロン株式会社 基板処理装置及びクリーニング方法
KR102877180B1 (ko) * 2025-07-29 2025-10-29 주식회사 와이디시스템 센터링 부재를 포함하는 디스플레이 패널 글라스 세정장치

Citations (2)

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JP2008218997A (ja) * 2007-02-08 2008-09-18 Applied Materials Inc 基板背面上の処理残留物の除去
JP2016051864A (ja) * 2014-09-02 2016-04-11 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

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JPS6478802A (en) 1987-09-19 1989-03-24 Daiwa Kikai Seisakusho Cutting of high-hardness brittle material cutting machine utilizing diamond wire saw
JP3175117B2 (ja) 1993-05-24 2001-06-11 東京エレクトロン株式会社 ドライクリーニング方法
FI105701B (fi) * 1995-10-20 2000-09-29 Ahlstrom Machinery Oy Menetelmä ja laitteisto massan käsittelemiseksi
US6159333A (en) * 1998-10-08 2000-12-12 Applied Materials, Inc. Substrate processing system configurable for deposition or cleaning
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
JP2010182712A (ja) * 2009-02-03 2010-08-19 Seiko Epson Corp 電気光学装置の製造装置のクリーニング方法、電気光学装置の製造装置
JP5364514B2 (ja) * 2009-09-03 2013-12-11 東京エレクトロン株式会社 チャンバ内クリーニング方法
JP5808750B2 (ja) * 2009-11-30 2015-11-10 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 傾斜側壁を備える静電チャック
JP5492574B2 (ja) * 2010-01-08 2014-05-14 東京エレクトロン株式会社 基板のクリーニング方法及び基板のクリーニング装置
JP5638405B2 (ja) * 2010-10-08 2014-12-10 パナソニック株式会社 基板のプラズマ処理方法
JP2012204644A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
KR102168064B1 (ko) * 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP6661283B2 (ja) * 2015-05-14 2020-03-11 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理方法
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2008218997A (ja) * 2007-02-08 2008-09-18 Applied Materials Inc 基板背面上の処理残留物の除去
JP2016051864A (ja) * 2014-09-02 2016-04-11 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Also Published As

Publication number Publication date
JP7229904B2 (ja) 2023-02-28
US20230173558A1 (en) 2023-06-08
CN117637431A (zh) 2024-03-01
US20210162468A1 (en) 2021-06-03
TW202137321A (zh) 2021-10-01
US11865591B2 (en) 2024-01-09
CN117637431B (zh) 2025-03-21
JP2021086968A (ja) 2021-06-03
KR20210067890A (ko) 2021-06-08
KR102721582B1 (ko) 2024-10-25
US12090529B2 (en) 2024-09-17
CN112885695A (zh) 2021-06-01

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