KR102721582B1 - 플라스마 처리 장치에서의 적재대의 클리닝 방법 및 플라스마 처리 장치 - Google Patents

플라스마 처리 장치에서의 적재대의 클리닝 방법 및 플라스마 처리 장치 Download PDF

Info

Publication number
KR102721582B1
KR102721582B1 KR1020200155532A KR20200155532A KR102721582B1 KR 102721582 B1 KR102721582 B1 KR 102721582B1 KR 1020200155532 A KR1020200155532 A KR 1020200155532A KR 20200155532 A KR20200155532 A KR 20200155532A KR 102721582 B1 KR102721582 B1 KR 102721582B1
Authority
KR
South Korea
Prior art keywords
substrate
plasma
loading
treatment
lifter pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020200155532A
Other languages
English (en)
Korean (ko)
Other versions
KR20210067890A (ko
Inventor
다카미츠 다카야마
준이치 사사키
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20210067890A publication Critical patent/KR20210067890A/ko
Application granted granted Critical
Publication of KR102721582B1 publication Critical patent/KR102721582B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H01L21/68742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20235—Z movement or adjustment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020200155532A 2019-11-29 2020-11-19 플라스마 처리 장치에서의 적재대의 클리닝 방법 및 플라스마 처리 장치 Active KR102721582B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019216210A JP7229904B2 (ja) 2019-11-29 2019-11-29 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置
JPJP-P-2019-216210 2019-11-29

Publications (2)

Publication Number Publication Date
KR20210067890A KR20210067890A (ko) 2021-06-08
KR102721582B1 true KR102721582B1 (ko) 2024-10-25

Family

ID=76043050

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200155532A Active KR102721582B1 (ko) 2019-11-29 2020-11-19 플라스마 처리 장치에서의 적재대의 클리닝 방법 및 플라스마 처리 장치

Country Status (5)

Country Link
US (2) US11865591B2 (https=)
JP (1) JP7229904B2 (https=)
KR (1) KR102721582B1 (https=)
CN (2) CN117637431B (https=)
TW (1) TWI837439B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102877180B1 (ko) * 2025-07-29 2025-10-29 주식회사 와이디시스템 센터링 부재를 포함하는 디스플레이 패널 글라스 세정장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118402047A (zh) * 2021-12-23 2024-07-26 东京毅力科创株式会社 等离子体处理装置
JP7776234B2 (ja) 2022-11-28 2025-11-26 東京エレクトロン株式会社 基板処理装置及びクリーニング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180158717A1 (en) * 2016-12-07 2018-06-07 Tel Fsi, Inc. Wafer edge lift pin design for manufacturing a semiconductor device
US20190157051A1 (en) * 2017-11-20 2019-05-23 Lam Research Corporation Method for cleaning chamber

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
JPS6478802A (en) 1987-09-19 1989-03-24 Daiwa Kikai Seisakusho Cutting of high-hardness brittle material cutting machine utilizing diamond wire saw
JP3175117B2 (ja) 1993-05-24 2001-06-11 東京エレクトロン株式会社 ドライクリーニング方法
FI105701B (fi) * 1995-10-20 2000-09-29 Ahlstrom Machinery Oy Menetelmä ja laitteisto massan käsittelemiseksi
US6159333A (en) * 1998-10-08 2000-12-12 Applied Materials, Inc. Substrate processing system configurable for deposition or cleaning
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
JP2010182712A (ja) * 2009-02-03 2010-08-19 Seiko Epson Corp 電気光学装置の製造装置のクリーニング方法、電気光学装置の製造装置
JP5364514B2 (ja) * 2009-09-03 2013-12-11 東京エレクトロン株式会社 チャンバ内クリーニング方法
JP5808750B2 (ja) * 2009-11-30 2015-11-10 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 傾斜側壁を備える静電チャック
JP5492574B2 (ja) * 2010-01-08 2014-05-14 東京エレクトロン株式会社 基板のクリーニング方法及び基板のクリーニング装置
JP5638405B2 (ja) * 2010-10-08 2014-12-10 パナソニック株式会社 基板のプラズマ処理方法
JP2012204644A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
KR102168064B1 (ko) * 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP6009513B2 (ja) * 2014-09-02 2016-10-19 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6661283B2 (ja) * 2015-05-14 2020-03-11 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理方法
JP7045883B2 (ja) * 2018-03-07 2022-04-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10971352B2 (en) * 2018-07-16 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd Cleaning method and apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180158717A1 (en) * 2016-12-07 2018-06-07 Tel Fsi, Inc. Wafer edge lift pin design for manufacturing a semiconductor device
US20190157051A1 (en) * 2017-11-20 2019-05-23 Lam Research Corporation Method for cleaning chamber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102877180B1 (ko) * 2025-07-29 2025-10-29 주식회사 와이디시스템 센터링 부재를 포함하는 디스플레이 패널 글라스 세정장치

Also Published As

Publication number Publication date
JP7229904B2 (ja) 2023-02-28
US20230173558A1 (en) 2023-06-08
CN117637431A (zh) 2024-03-01
US20210162468A1 (en) 2021-06-03
TW202137321A (zh) 2021-10-01
US11865591B2 (en) 2024-01-09
TWI837439B (zh) 2024-04-01
CN117637431B (zh) 2025-03-21
JP2021086968A (ja) 2021-06-03
KR20210067890A (ko) 2021-06-08
US12090529B2 (en) 2024-09-17
CN112885695A (zh) 2021-06-01

Similar Documents

Publication Publication Date Title
CN102243977B (zh) 等离子体处理装置及半导体装置的制造方法
KR102434559B1 (ko) 탑재대 및 플라즈마 처리 장치
KR101720670B1 (ko) 기판 처리 장치 및 그 클리닝 방법 및 프로그램을 기록한 기록매체
JP2018186179A (ja) 基板処理装置及び基板取り外し方法
KR102750143B1 (ko) 플라즈마 처리 장치, 및 피처리체의 반송 방법
US12090529B2 (en) Method of cleaning stage in plasma processing apparatus, and the plasma processing apparatus
JP2012064671A (ja) プラズマ処理装置及びプラズマ処理方法並びにこれを実施するためのプログラムを記憶する記憶媒体
CN114068279A (zh) 载置台和等离子体处理装置
US8974600B2 (en) Deposit protection cover and plasma processing apparatus
TW202139252A (zh) 載置台、基板處理裝置及傳熱氣體供給方法
JP7270863B1 (ja) プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置
JP7595431B2 (ja) プラズマ処理方法及びプラズマ処理装置
US20240347325A1 (en) Plasma processing apparatus
JP2023038801A (ja) 基板処理方法
JP7214021B2 (ja) プラズマ処理装置、及び被処理体の搬送方法
WO2022249964A1 (ja) クリーニング方法およびプラズマ処理方法
JP2025024972A (ja) 基板処理方法及び基板処理装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000