JP7229904B2 - プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置 - Google Patents

プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置 Download PDF

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Publication number
JP7229904B2
JP7229904B2 JP2019216210A JP2019216210A JP7229904B2 JP 7229904 B2 JP7229904 B2 JP 7229904B2 JP 2019216210 A JP2019216210 A JP 2019216210A JP 2019216210 A JP2019216210 A JP 2019216210A JP 7229904 B2 JP7229904 B2 JP 7229904B2
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Japan
Prior art keywords
substrate
plasma
mounting table
processing container
processing
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JP2019216210A
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English (en)
Japanese (ja)
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JP2021086968A (ja
JP2021086968A5 (https=
Inventor
貴光 高山
淳一 佐々木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2019216210A priority Critical patent/JP7229904B2/ja
Priority to TW109139879A priority patent/TWI837439B/zh
Priority to KR1020200155532A priority patent/KR102721582B1/ko
Priority to CN202011307540.6A priority patent/CN112885695A/zh
Priority to CN202311642146.1A priority patent/CN117637431B/zh
Priority to US17/103,918 priority patent/US11865591B2/en
Publication of JP2021086968A publication Critical patent/JP2021086968A/ja
Publication of JP2021086968A5 publication Critical patent/JP2021086968A5/ja
Priority to US18/104,522 priority patent/US12090529B2/en
Priority to JP2023021695A priority patent/JP7270863B1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20235—Z movement or adjustment

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2019216210A 2019-11-29 2019-11-29 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置 Active JP7229904B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2019216210A JP7229904B2 (ja) 2019-11-29 2019-11-29 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置
TW109139879A TWI837439B (zh) 2019-11-29 2020-11-16 電漿處理裝置之載置台之清潔方法及電漿處理裝置
KR1020200155532A KR102721582B1 (ko) 2019-11-29 2020-11-19 플라스마 처리 장치에서의 적재대의 클리닝 방법 및 플라스마 처리 장치
CN202311642146.1A CN117637431B (zh) 2019-11-29 2020-11-20 清洁方法和等离子体处理装置
CN202011307540.6A CN112885695A (zh) 2019-11-29 2020-11-20 清洁方法和等离子体处理装置
US17/103,918 US11865591B2 (en) 2019-11-29 2020-11-24 Method of cleaning stage in plasma processing apparatus, and the plasma processing apparatus
US18/104,522 US12090529B2 (en) 2019-11-29 2023-02-01 Method of cleaning stage in plasma processing apparatus, and the plasma processing apparatus
JP2023021695A JP7270863B1 (ja) 2019-11-29 2023-02-15 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019216210A JP7229904B2 (ja) 2019-11-29 2019-11-29 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置

Related Child Applications (1)

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JP2023021695A Division JP7270863B1 (ja) 2019-11-29 2023-02-15 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置

Publications (3)

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JP2021086968A JP2021086968A (ja) 2021-06-03
JP2021086968A5 JP2021086968A5 (https=) 2022-11-14
JP7229904B2 true JP7229904B2 (ja) 2023-02-28

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JP2019216210A Active JP7229904B2 (ja) 2019-11-29 2019-11-29 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置

Country Status (5)

Country Link
US (2) US11865591B2 (https=)
JP (1) JP7229904B2 (https=)
KR (1) KR102721582B1 (https=)
CN (2) CN117637431B (https=)
TW (1) TWI837439B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118402047A (zh) * 2021-12-23 2024-07-26 东京毅力科创株式会社 等离子体处理装置
JP7776234B2 (ja) 2022-11-28 2025-11-26 東京エレクトロン株式会社 基板処理装置及びクリーニング方法
KR102877180B1 (ko) * 2025-07-29 2025-10-29 주식회사 와이디시스템 센터링 부재를 포함하는 디스플레이 패널 글라스 세정장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218997A (ja) 2007-02-08 2008-09-18 Applied Materials Inc 基板背面上の処理残留物の除去
JP2010182712A (ja) 2009-02-03 2010-08-19 Seiko Epson Corp 電気光学装置の製造装置のクリーニング方法、電気光学装置の製造装置
JP2011054825A (ja) 2009-09-03 2011-03-17 Tokyo Electron Ltd チャンバ内クリーニング方法
JP2012099781A (ja) 2010-10-08 2012-05-24 Panasonic Corp 基板のプラズマ処理方法
JP2013512564A (ja) 2009-11-30 2013-04-11 ラム リサーチ コーポレーション 傾斜側壁を備える静電チャック
JP2016051864A (ja) 2014-09-02 2016-04-11 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US20190157051A1 (en) 2017-11-20 2019-05-23 Lam Research Corporation Method for cleaning chamber
JP2019160816A (ja) 2018-03-07 2019-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

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US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
JPS6478802A (en) 1987-09-19 1989-03-24 Daiwa Kikai Seisakusho Cutting of high-hardness brittle material cutting machine utilizing diamond wire saw
JP3175117B2 (ja) 1993-05-24 2001-06-11 東京エレクトロン株式会社 ドライクリーニング方法
FI105701B (fi) * 1995-10-20 2000-09-29 Ahlstrom Machinery Oy Menetelmä ja laitteisto massan käsittelemiseksi
US6159333A (en) * 1998-10-08 2000-12-12 Applied Materials, Inc. Substrate processing system configurable for deposition or cleaning
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
JP5492574B2 (ja) * 2010-01-08 2014-05-14 東京エレクトロン株式会社 基板のクリーニング方法及び基板のクリーニング装置
JP2012204644A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
KR102168064B1 (ko) * 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP6661283B2 (ja) * 2015-05-14 2020-03-11 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理方法
US10418270B2 (en) * 2016-12-07 2019-09-17 Tel Fsi, Inc. Wafer edge lift pin design for manufacturing a semiconductor device
US10971352B2 (en) * 2018-07-16 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd Cleaning method and apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218997A (ja) 2007-02-08 2008-09-18 Applied Materials Inc 基板背面上の処理残留物の除去
JP2010182712A (ja) 2009-02-03 2010-08-19 Seiko Epson Corp 電気光学装置の製造装置のクリーニング方法、電気光学装置の製造装置
JP2011054825A (ja) 2009-09-03 2011-03-17 Tokyo Electron Ltd チャンバ内クリーニング方法
JP2013512564A (ja) 2009-11-30 2013-04-11 ラム リサーチ コーポレーション 傾斜側壁を備える静電チャック
JP2012099781A (ja) 2010-10-08 2012-05-24 Panasonic Corp 基板のプラズマ処理方法
JP2016051864A (ja) 2014-09-02 2016-04-11 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US20190157051A1 (en) 2017-11-20 2019-05-23 Lam Research Corporation Method for cleaning chamber
JP2019160816A (ja) 2018-03-07 2019-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
US20230173558A1 (en) 2023-06-08
CN117637431A (zh) 2024-03-01
US20210162468A1 (en) 2021-06-03
TW202137321A (zh) 2021-10-01
US11865591B2 (en) 2024-01-09
TWI837439B (zh) 2024-04-01
CN117637431B (zh) 2025-03-21
JP2021086968A (ja) 2021-06-03
KR20210067890A (ko) 2021-06-08
KR102721582B1 (ko) 2024-10-25
US12090529B2 (en) 2024-09-17
CN112885695A (zh) 2021-06-01

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